The Kynix Components

CatalogDescriptionRelated Video InstructionCAD ModelsPin ConfigurationBlock DiagramFeaturesApplicationsDatasheetSpecificationsManufacturerUsing WarningFAQ DescriptionThe BMG250 is a three axial gyroscope consisting of a state-of-the-art low power 3-axis gyroscope. It has been designed for low power, high precision multi-axis applications in mobile phones, tablets, wearable devices, remote controls, game controllers, head-mounted devices and toys. The BMG250 is available in a compact 2.5 × 3.0 × 0.83 mm3 LGA package. When the gyroscope is in full operation mode, power consumption is typically 850 µA, enabling always-on applications in battery driven devices. The BMG250 offers a wide VDD voltage range from 1.71V to 3.6V and a VDDIO range from 1.2V to 3.6V, allowing the BMG250 to be powered at 1.8V for both VDD and VDDIO. Related Video InstructionVideo: Bosch Gyroscope Sensor - BMG250Video Description:The BMG250 is an ultra-small, digital 3-axis gyroscope sensor. BMG250  provides a precise low-noise angular rate (gyroscopic) measurement at  market leading low power consumption. The BMG250 is optimized for image  stabilization duties in parallel to standard user interface  applications. The BMG250 has been designed for low power, high precision  multi-axis UI applications parallel to optical or electronic image  stabilization (OIS & EIS) for special use cases in mobile phones,  tablets, camera modules and head-mounted devices. CAD Models Figure: PCB Symbol  Figure: Footprint Pin Configuration Figure: Pin Configuration Block Diagram Figure: Block Diagram FeaturesHigh performance low noise and low offset gyroscopeVery low power consumption: typ. 850 µA (gyroscope in full operation)Very small 2.5 x 3.0 mm2 footprint, height 0.83 mmSecondary high speed interface for OIS application       - Optimized for low latency and high Output Data RateParallel use for OIS and standard UI applications       - UI → Primary Interface (I²C)       - OIS → Secondary Interface (SPI)Built-in power management unit (PMU) for advanced power managementPower saving with fast start-up mode of gyroscopeWide power supply range: 1.71V … 3.6VAllocatable FIFO buffer of 1024 bytesHardware sensor time-stamps for accurate sensor data fusionFlexible digital interface to connect to host over I2C or SPIExtended I2C mode with clock frequencies up to 1 MHz ApplicationsOptical Image StabilizationElectronic Image StabilizationOptical/Electronic Video StabilizationAugmented RealityIndoor navigation3D scanning / indoor mappingAdvanced gesture recognitionImmersive gaming3-axis motion detection, e.g. Air mouse applications and pointersAdvanced system power management for mobile applicationswarranty logging DatasheetYou can download the datasheet the link given below.BMG250-Datasheet SpecificationsTYPEDESCRIPTIONCategorySensors, TransducersMfrBosch SensortecPackageTape & Reel (TR) Cut Tape (CT) Digi-ReelProduct StatusActiveTypeDigitalAxisX (Pitch), Y (Roll), Z (Yaw)Range 掳/s±125, 250, 500, 1000, 2000Sensitivity (LSB/(°/s))16.4 ~ 262.4Sensitivity (mV/°/s)-Bandwidth25Hz ~ 3200HzOutput TypeI2C, SPIVoltage - Supply1.71V ~ 3.6VCurrent - Supply850 μAFeaturesAdjustable Bandwidth, Selectable Scale, Sleep ModeOperating Temperature-40℃～85℃Package / Case14-LGA ManufacturerBosch Sensortec is the technology leader in sensing solutions based on microelectromechanical systems (MEMS) and dedicated to the consumer electronics world. Our success in MEMS sensors and solutions is built on a remarkable team driven by passion, innovation and flexibility. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQWhat is gyroscope used for?Gyroscopes are used in compasses and automatic pilots on ships and aircraft, in the steering mechanisms of torpedoes, and in the inertial guidance systems installed in space launch vehicles, ballistic missiles, and orbiting satellites. What is gyroscope sensor and how it works?A gyroscope sensor works on the principle of conservation of angular momentum. It works by preserving the angular momentum. In a gyroscope sensor, a rotor or a spinning wheel is mounted on a pivot. The pivot allows the rotation of the rotor on a particular axis which is called a gimbal. How does gyro sensor work in mobile devices?A gyroscope in your phone enables it to sense linear orientation of the phone to auto rotate your screen. While the gyroscope takes care of the rotational orientation, it is the accelerometer that senses the linear changes relative to the frame of reference of the device. 

CatalogGeneral DescriptionFeaturesAbsolute Maximum RatingsElectrical CharacteristicsTypical Electrical CharacteristicsDatasheet PDF DownloadFAQ General DescriptionSuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features▪ 2.2 A, 30 V, RDS(ON)= 0.065 W @ VGS = 4.5 V  RDS(ON)= 0.082 W @ VGS = 2.5 V.▪ Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.▪ High density cell design for extremely low RDS(ON).▪ Exceptional on-resistance and maximum DC current capability.Absolute Maximum RatingsSymbolParameterFDN337NUnitsVDSSDrain-Source Voltage30VVGSSGate-Source Voltage - Continuous±8VIDDrain/Output Current - Continuous2.2A- Pulsed  10 PDMaximum Power Dissipation (Note 1a) (Note 1b)0.5W  0.46 TJ,TSTGOperating and Storage Temperature Range-55 to 150°CTHERMAL CHARACTERISTICSRqJAThermal Resistance, Junction-to-Ambient (Note 1a)250°C/WRqJCThermal Resistance, Junction-to-Case (Note 1)75°C/WElectrical CharacteristicsSymbolParameterConditionsMinTypMaxUnitsOFF CHARACTERISTICSBVDSSDrain-Source Breakdown VoltageVGS = 0 V, ID = 250 µA30  VDBVDSS/DTJBreakdown Voltage Temp. Coefficient  41 mV/ oCI = 250 µA, Referenced to 25 oC DIDSSZero Gate Voltage Drain CurrentVDS = 24 V, VGS = 0 V  1µA   TJ = 55°C  10µAIGSSFGate - Body Leakage, ForwardVGS = 8 V,VDS = 0 V  100nAIGSSRGate - Body Leakage, ReverseVGS = -8 V, VDS = 0 V  -100nAON CHARACTERISTICS (Note)VGS(th)Gate Threshold VoltageVDS = VGS, ID = 250 µA0.40.71VDVGS(th)/DTJGate Threshold Voltage Temp. Coefficient  -2.3 mV/ oCI = 250 µA, Referenced to 25 oC DRDS(ON)Static Drain-Source On-ResistanceVGS = 4.5 V, ID = 2.2 A 0.0540.065W   TJ =125°C 0.080.11   VGS = 2.5 V, ID = 2 A 0.070.082 ID(ON)On-State Drain CurrentVGS = 4.5 V, VDS = 5 V10  AgFSForward TransconductanceVDS = 5 V, ID = 2.2 A 13 SDYNAMIC CHARACTERISTICSCissInput CapacitanceVDS = 10 V, VGS = 0 V, f = 1.0 MHz 300 pFCossOutput Capacitance  145 pFCrssReverse Transfer Capacitance  35 pFSWITCHING CHARACTERISTICS (Note)tD(on)Turn - On Delay TimeVDD = 5 V, ID = 1 A, 410nsVGS = 4.5 V, RGEN = 6 WtrTurn - On Rise Time  1018nstD(off)Turn - Off Delay Time  1728nstfTurn - Off Fall Time  410nsQgTotal Gate ChargeVDS = 10 V, ID = 2.2 A, VGS = 4.5 V 79nCQgsGate-Source Charge  1.1 nCQgdGate-Drain Charge  1.9 nCDRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSISMaximum Continuous Drain-Source Diode Forward Current  0.42AVSDDrain-Source Diode Forward VoltageVGS = 0 V, IS = 0.42 A (Note) 0.651.2VTypical Electrical Characteristics    Datasheet PDF DownloadYou can download the datasheet from the link given below.FDN337N-Datasheet FAQWhat is N-channel transistor?N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).What is the function of an transistor?transistor, semiconductor device for amplifying, controlling, and generating electrical signals. Transistors are the active components of integrated circuits, or “microchips,” which often contain billions of these minuscule devices etched into their shiny surfaces. How transistor works as an amplifier?A transistor works as an amplifier by taking in a very small weak signal through the base junction and raising the strength of the weak signal. This amplified signal is released through the collector. 

Product OverviewPlanar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This blog will introduce BAT54C systematically from its features, pinout to its specifications, applications, also including BAT54C datasheet and so much more. CatalogProduct OverviewBAT54C FeaturesBAT54C PinoutBAT54C ApplicationsBAT54C CAD ModelsBAT54C Circuit DiagramBAT54C PackageBAT54C SpecificationBAT54C ManufacturerBAT54C DatasheetUsing WarningsBAT54C FAQ BAT54C FeaturesLow forward voltageLow capacitanceAEC-Q101 qualified BAT54C PinoutThe following figure is the diagram of BAT54C pinout. BAT54C Pinout BAT54C ApplicationsUltra high-speed switchingVoltage clampingLine termination nReverse polarity protection BAT54C CAD ModelsThe following are BAT54C Symbol, Footprint, and 3D Model. BAT54C Symbol BAT54C Footprint BAT54C 3D Model BAT54C Circuit DiagramThe following is the circuit diagram of BAT54C. Reverse Recovery Time Test Circuit and Waveforms BAT54C PackageThe following diagram shows the BAT54C package. BAT54C Package BAT54C SpecificationProduct AttributeAttribute ValueManufacturer:NexperiaProduct Category:Schottky Diodes & RectifiersProduct:Schottky DiodesMounting Style:SMD/SMTPackage / Case:SOT-23-3Configuration:Dual Anode Common CathodeTechnology:SiIf - Forward Current:200 mAVrrm - Repetitive Reverse Voltage:30 VVf - Forward Voltage:800 mVIfsm - Forward Surge Current:600 mAIr - Reverse Current:2 uAMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 125 CQualification:AEC-Q101Packaging:ReelPackaging:Cut TapePackaging:MouseReelBrand:NexperiaHeight:1 mmLength:3 mmProduct Type:Schottky Diodes & Rectifiers BAT54C ManufacturerNexperia is a dedicated global leader in discretes, logic and MOSFET devices. Formerly a part of NXP Standard Products, Nexperia is focused on efficiency, producing consistently reliable semiconductor components at high volume. The company’s extensive portfolio meets the stringent standards set by the automotive industry. Industry-leading small packages, produced in Nexperia’s manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. BAT54C DatasheetYou can download BAT54C datasheet from the link given below:BAT54C Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. BAT54C FAQWhat is a Schottky diode used for?Schottky diodes are used for their low turn-on voltage, fast recovery time and low-loss energy at higher frequencies. These characteristics make Schottky diodes capable of rectifying a current by facilitating a quick transition from conducting to blocking state. What is the difference between Schottky diode and normal diode?In the normal rectifier grade PN junction diode, the junction is formed between P type semiconductor to N type semiconductor. Whereas in Schottky diode the junction is in between N type semiconductor to Metal plate. The schottky barrier diode has electrons as majority carriers on both sides of the junction. What is the Schottky diode and how it works?The Schottky Diode is a type of metal-semiconductor diode having a low forward voltage drop and a very fast switching speed. The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode.

CatalogFeaturesGeneral DescriptionApplicationsMOSFET Maximum RatingsElectrical CharacteristicsTypical CharacteristicsDatasheet PDF DownloadFAQ Features„ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A„ Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A„ High performance trench technology for extremely low rDS(on)„ High power and current handling capability in a widely used surface mount package„ Fast switching speed„ 100% UIL Tested„ RoHS Compliant General DescriptionThis P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench process that has been optimized for rDS(on), switching performance and ruggedness. Applications„ Load Switch„ Synchronous Rectifier MOSFET Maximum RatingsSymbolParameterRatingsUnitsVDSDrain to Source Voltage-80VVGSGate to Source Voltage±20VIDDrain Current  -Continuous (Note 1a)-2.1A-Pulsed-10EASSingle Pulse Avalanche Energy (Note 3)37mJPDPower Dissipation (Note 1a)1.6WPower Dissipation (Note 1b)0.7TJ, TSTGOperating and Storage Junction Temperature Range-55 to +150°C Thermal CharacteristicsRqJCThermal Resistance, Junction to Case30 °C/WRqJAThermal Resistance, Junction to Ambient (Note 1a)78 Package Marking and Ordering InformationDevice MarkingDevicePackageReel SizeTape WidthQuantity.535FDC3535SSOT-67 ’’8 mm3000 units Electrical CharacteristicsSymbolParameterTest ConditionsMinTypMaxUnits Off CharacteristicsBVDSSDrain to Source Breakdown VoltageID = -250 mA, VGS = 0 V-80  VDBVDSSDTJBreakdown Voltage Temperature CoefficientID = -250 mA, referenced to 25 °C -64 mV/°CIDSSZero Gate Voltage Drain CurrentVDS = -64 V, VGS = 0 V  -1mAIGSSGate to Source Leakage CurrentVGS = ±20 V, VDS = 0 V  ±100nA On CharacteristicsVGS(th)Gate to Source Threshold VoltageVGS = VDS, ID = -250 mA-1-1.6-3V DVGS(th) DTJGate to Source Threshold Voltage Temperature CoefficientID = -250 mA, referenced to 25 °C 5 mV/°C rDS(on) Static Drain to Source On ResistanceVGS = -10 V, ID = -2.1 A 147183 mWVGS = -4.5 V, ID = -1.9 A 176233VGS = -10 V, ID = -2.1 A, TJ = 125 °C 246307gFSForward TransconductanceVDD = -10 V, ID = -2.1 A 6.3 S Dynamic CharacteristicsCissInput CapacitanceVDS = -40 V, VGS = 0 V,f = 1 MHz 659880pFCossOutput Capacitance 4965pFCrssReverse Transfer Capacitance 2440pFRgGate Resistance  5.7 W Switching Characteristicstd(on)Turn-On Delay Time VDD = -40 V, ID = -2.1 A, VGS = -10 V, RGEN = 6 W 6.513nstrRise Time 3.110nstd(off)Turn-Off Delay Time 2338nstfFall Time 2.910nsQg(TOT)Total Gate ChargeVGS = 0 V to -10 V VDD = -40 V 1420nCTotal Gate ChargeVGS = 0 V to -4.5 V 6.810nCQgsTotal Gate ChargeID = -2.1 A 1.6 nCQgdGate to Drain “Miller” Charge 2.7 nC Drain-Source Diode CharacteristicsVSDSource to Drain Diode Forward VoltageVGS = 0 V, IS = -2.1 A (Note 2) -0.81-1.3VtrrReverse Recovery TimeIF = -2.1 A, di/dt = 100 A/ms 2540nsQrrReverse Recovery Charge 2338nC Typical Characteristics   Datasheet PDF DownloadYou can download the datasheet from the link given below.FDC3535-Datasheet FAQWhat is power Trench MOSFET?A trench gate MOSFET is basically an attempt to make a complete chip. conduct the current vertically from one surface to the other so as to achieve a high. drive capability. It is realized by packing millions of trenches on a chip, deep. enough to cross the oppositely doped 'body' region below the top surface. What is the difference between MOSFET and power MOSFET?A power MOSFET is a type of MOSFET that is designed specifically to handle high levels of power. These have a high switching speed and can perform much better in low voltage levels than other types of MOSFETs. Its operating principle, however, is similar to that of any other general MOSFET. How much power can a MOSFET handle?Modern MOSFETs can have on resistances of less than 10 milliohms. A little math shows that this device can handle 10 amps with one watt converted into waste heat (power = current2 x resistance). Since many MOSFETs come in TO-220 packages, no heatsink is needed in this instance. 

CatalogDescriptionFeaturesApplicationsQuick reference dataLimiting valuesThermal characteristicsCharacteristicsPackage outlineDatasheet PDF DownloadFAQ DescriptionN-channel enhancement mode fifield-effect transistor in a plastic package usingTrenchMOS™1 technology.Product availability:BST82 in SOT23. FeaturesTrenchMOS technologyVery fast switchingLogic level compatibleSubminiature surface mount packageApplicationsRelay driverHigh speed line driverLogic level translator Quick reference dataSymbolParameterConditionsTypMaxUnitVDSdrain-source voltage (DC)Tj = 25 to 150 °C-100VIDdrain current (DC)Tsp = 25 °C; VGS = 5 V-190mAPtottotal power dissipationTsp = 25 °C-0.83WTjjunction temperature -150°CRDSondrain-source on-state resistanceVGS = 5 V; ID = 150 mA510WLimiting valuesSymbolParameterConditionsTypMaxUnitVDSdrain-source voltage (DC)Tj = 25 to 150 °C-100VIDdrain current (DC)Tsp = 25 °C; VGS = 5 V-190mAPtottotal power dissipationTsp = 25 °C-0.83WTjjunction temperature -150°CRDSondrain-source on-state resistanceVGS = 5 V; ID = 150 mA510W   Thermal characteristicsSymbolParameterConditionsValueUnitRth(j-sp)thermal resistance from junction to solder pointmounted on a metal clad substrate; Figure 4150K/WRth(j-a)thermal resistance from junction to ambientmounted on a printed circuit board; minimum footprint350K/WTransient thermal impedanceCharacteristics      Package outline Datasheet PDFYou can download the datasheet from the link given below.BST82 Datasheet FAQWhat does a Field Effect Transistor do?FET uses the voltage applied to its input terminal (called the Gate), to control the current flowing from the source to drain, making the Field Effect Transistor a “Voltage” operated device. FETs are extensively used in Integrated Circuits (ICs) due to their compact size and significantly lower power consumption. Why it is called Field Effect Transistor?The value of drain current from the source can be controlled by the potential applied to the gate i.e. the electric field b/w gate and source. That is why such transistor is known as F.E.T. What is the difference between transistor and Field Effect Transistor?BJT and FET are two different types of transistors. Apart from being transistors and both able to do switching as well as amplification, they are quite different from each other. For instance, BJT is a current-controlled current device while FET is a voltage-controlled current device. 

Product OverviewThe LM317 device is an adjustable three-terminal positive-voltage regulator capable of supplying more than 1.5 A over an output-voltage range of 1.25 V to 37 V. It requires only two external resistors to set the output voltage. The device features a typical line regulation of 0.01% and typical load regulation of 0.1%. It includes current limiting, thermal overload protection, and safe operating area protection. Overload protection remains functional even if the ADJUST terminal is disconnected. This blog will introduce LM317DCYR systematically from its features, pinout to its specifications, applications, also including LM317DCYR datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionLM317DCYR FeaturesLM317DCYR PinoutLM317DCYR ApplicationsLM317DCYR CAD ModelsLM317DCYR Circuit DiagramLM317DCYR Block DiagramLM317DCYR PackageLM317DCYR SpecificationLM317DCYR ManufacturerLM317DCYR DatasheetUsing WarningsLM317DCYR FAQ Related Video Introduction Video: voltage regulator lm317 power supply LM317DCYR Video Description: Voltage regulator. Learn how to make a 0 to 30 V regulator using capacitors, LM317 regulator and TIP36C, learn how the circuit works and also how to build your circuit electronic components together LM317DCYR FeaturesOutput voltage range adjustablefrom 1.25 V to 37 VOutput current greater than 1.5 AInternal short-circuit current limitingThermal overload protectionOutput safe-area compensation LM317DCYR PinoutThe following figure is the diagram of LM317DCYR pinout. LM317DCYR Pinout LM317DCYR ApplicationsATCA solutionsDLP: 3D biometrics, hyperspectral imaging, optical networking, and spectroscopyDVR and DVSDesktop PCsDigital signage and still camerasECG electrocardiogramsEV HEV chargers: levels 1, 2, and 3Electronic shelf labelsEnergy harvestingEthernet switchesFemto base stationsFingerprint and iris biometricsHVAC: heating, ventilating, and air conditioningHigh-speed data acquisition and generationHydraulic valvesIP phones: wired and wirelessIntelligent occupancy sensingMotor controls: brushed DC, brushless DC, lowvoltage, permanent magnet, and stepper motorsPoint-to-point microwave backhaulsPower bank solutionsPower line communication modemsPower over ethernet (PoE)Power quality metersPower substation controlsPrivate branch exchanges (PBX)Programmable logic controllersRFID readersRefrigeratorsSignal or waveform generatorsSoftware-defined radios (SDR)Washing machines: high-end and low-endX-rays: baggage scanners, medical, and dental LM317DCYR CAD ModelsThe following are LM317DCYR Symbol, Footprint, and 3D Model. LM317DCYR Symbol LM317DCYR Footprint LM317DCYR 3D Model LM317DCYR Circuit DiagramThe following are the circuit diagrams of LM317DCYR. LM317DCYR Circuit Diagram Adjustable Voltage Regulator LM317DCYR Block DiagramThe following figure shows the block diagram of LM317DCYR LM317DCYR Block Diagram LM317DCYR PackageThe following diagram shows the LM317DCYR package. LM317DCYR Package LM317DCYR SpecificationProduct AttributeAttribute ValueManufacturer:Texas InstrumentsProduct Category:Linear Voltage RegulatorsMounting Style:SMD/SMTPackage/Case:SOT-223-4Number of Outputs:1 OutputPolarity:PositiveOutput Voltage:1.25 V to 37 VOutput Current:1.5 AOutput Type:AdjustableInput Voltage, Min:3 VInput Voltage, Max:40 VMinimum Operating Temperature:0 CMaximum Operating Temperature:+ 125 CLoad Regulation:0.5 %/VLine Regulation:0.04 %/VQuiescent Current:5 mA  LM317DCYR ManufacturerTexas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today. LM317DCYR DatasheetYou can download LM317DCYR datasheet from the link given below:LM317DCYR Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. LM317DCYR FAQHow many external resistors does the LM317 require to set the output voltage?Two external resistors. What is the typical line regulation of the LM317 device?0.01%. What terminal is disconnected from the LM317?ADJUST terminal.