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  • Contents

Catalog

Description

Features

Applications

Quick reference data

Limiting values

Thermal characteristics

Characteristics

Package outline

Datasheet PDF Download

FAQ

 

Description

N-channel enhancement mode fifield-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

BST82 in SOT23.

 

Features

TrenchMOS technology
Very fast switching
Logic level compatible
Subminiature surface mount package


Applications

Relay driver
High speed line driver
Logic level translator

 

Quick reference data

Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 100 V
ID drain current (DC) Tsp = 25 °C; VGS = 5 V - 190 mA
Ptot total power dissipation Tsp = 25 °C - 0.83 W
Tj junction temperature   - 150 °C
RDSon drain-source on-state resistance VGS = 5 V; ID = 150 mA 5 10 W


Limiting values

Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 100 V
ID drain current (DC) Tsp = 25 °C; VGS = 5 V - 190 mA
Ptot total power dissipation Tsp = 25 °C - 0.83 W
Tj junction temperature   - 150 °C
RDSon drain-source on-state resistance VGS = 5 V; ID = 150 mA 5 10 W

 

Fig1-Normalized-total-power-dissipationFig2-Normalized-continuous-drain-current

 

Fig3-Safe-operating-area-continuous-and-peak-drain-currents

 

Thermal characteristics

Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W
Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 350 K/W

Transient thermal impedance

Fig4-Transient-thermal-impedance-from-junction-to-solder-point


Characteristics

Table5-Characteristics

 

Fig5-Output-characteristics-drain-currentFig6-Transfer-characteristics-drain-current

 

Fig7-Drain-source-on-state-resistanceFig8-Normalized-drain-source-on-state-resistance-factor

 

Fig9-Gate-source-threshold-voltageFig10-Sub-threshold-drain-curre

 

Fig11-Forward-transconductanceFig12-Input-output-and-reverse-transfer-capacitances

 

Fig13-Source-diode-forward-current

 


Package outline

Figure-Package-Outline

 

Datasheet PDF

You can download the datasheet from the link given below.

BST82 Datasheet

 

FAQ

What does a Field Effect Transistor do?

FET uses the voltage applied to its input terminal (called the Gate), to control the current flowing from the source to drain, making the Field Effect Transistor a “Voltage” operated device. FETs are extensively used in Integrated Circuits (ICs) due to their compact size and significantly lower power consumption.

 

Why it is called Field Effect Transistor?

The value of drain current from the source can be controlled by the potential applied to the gate i.e. the electric field b/w gate and source. That is why such transistor is known as F.E.T.

 

What is the difference between transistor and Field Effect Transistor?

BJT and FET are two different types of transistors. Apart from being transistors and both able to do switching as well as amplification, they are quite different from each other. For instance, BJT is a current-controlled current device while FET is a voltage-controlled current device.

 

BST82 Documents & Media

Download datasheets and manufacturer documentation for NXP Semiconductors BST82.

BST82 PCB Symbol, Footprint & 3D Model

NXP Semiconductors BST82

NXP Semiconductors

Mosfet Transistor, N Channel, 190 Ma, 100 V, 10 Ohm, 5 V, 2 V

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Allen

Allen is a seasoned professional with over 10 years of experience in the semiconductor industry. He possesses in-depth industry knowledge and a unique perspective on the market landscape. Allen has a proven track record of success in leading and managing teams, driving innovation, and delivering results.

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