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  • Contents

Catalog

General Description

Features

Absolute Maximum Ratings

Electrical Characteristics

Typical Electrical Characteristics

Datasheet PDF Download

FAQ

 

General Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

 

Features

▪ 2.2 A, 30 V, RDS(ON)= 0.065 W @ VGS = 4.5 V 
 RDS(ON)= 0.082 W @ VGS = 2.5 V.
▪ Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
▪ High density cell design for extremely low RDS(ON).
▪ Exceptional on-resistance and maximum DC current capability.


Absolute Maximum Ratings

Symbol Parameter FDN337N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±8 V
ID Drain/Output Current - Continuous 2.2 A
- Pulsed
    10  
PD Maximum Power Dissipation (Note 1a) (Note 1b) 0.5 W
    0.46  
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W


Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30     V
DBVDSS/DTJ Breakdown Voltage Temp. Coefficient     41   mV/ oC
I = 250 µA, Referenced to 25 oC D
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V     1 µA
      TJ = 55°C     10 µA
IGSSF Gate - Body Leakage, Forward VGS = 8 V,VDS = 0 V     100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V     -100 nA
ON CHARACTERISTICS (Note)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.7 1 V
DVGS(th)/DTJ Gate Threshold Voltage Temp. Coefficient     -2.3   mV/ oC
I = 250 µA, Referenced to 25 oC D
RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 2.2 A   0.054 0.065 W
      TJ =125°C   0.08 0.11  
    VGS = 2.5 V, ID = 2 A   0.07 0.082  
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V 10     A
gFS Forward Transconductance VDS = 5 V, ID = 2.2 A   13   S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz   300   pF
Coss Output Capacitance     145   pF
Crss Reverse Transfer Capacitance     35   pF
SWITCHING CHARACTERISTICS (Note)
tD(on) Turn - On Delay Time VDD = 5 V, ID = 1 A,   4 10 ns
VGS = 4.5 V, RGEN = 6 W
tr Turn - On Rise Time     10 18 ns
tD(off) Turn - Off Delay Time     17 28 ns
tf Turn - Off Fall Time     4 10 ns
Qg Total Gate Charge VDS = 10 V, ID = 2.2 A, VGS = 4.5 V   7 9 nC
Qgs Gate-Source Charge     1.1   nC
Qgd Gate-Drain Charge     1.9   nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current     0.42 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note)   0.65 1.2 V


Typical Electrical Characteristics

Figure-Typical-Electrical-Characteristics-01-04

 

Figure-Typical-Electrical-Characteristics-05-06

 

Figure-Typical-Electrical-Characteristics-07-10

 

Figure-Typical-Electrical-Characteristics-11

 

Datasheet PDF Download

You can download the datasheet from the link given below.

FDN337N-Datasheet

 

FAQ

What is N-channel transistor?

N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).


What is the function of an transistor?

transistor, semiconductor device for amplifying, controlling, and generating electrical signals. Transistors are the active components of integrated circuits, or “microchips,” which often contain billions of these minuscule devices etched into their shiny surfaces.

 

How transistor works as an amplifier?

A transistor works as an amplifier by taking in a very small weak signal through the base junction and raising the strength of the weak signal. This amplified signal is released through the collector.

 

FDN337N PCB Symbol, Footprint & 3D Model

FUXINSEMI FDN337N

FUXINSEMI

SOT-23 MOSFETs ROHS

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