Product OverviewFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. This blog will introduce IRF530N systematically from its features, pinout to its specifications, applications, also including IRF530N datasheet and so much more. CatalogProduct OverviewIRF530N FeaturesIRF530N PinoutIRF530N ApplicationsIRF530N Circuit DiagramIRF530N PackageIRF530N SpecificationIRF530N ManufacturerIRF530N DatasheetUsing WarningsIRF530N FAQ IRF530N FeaturesPlanar cell structure for wide SOAOptimized for broadest availability from distribution partnersProduct qualification according to JEDEC standardSilicon optimized for applications switching below <100kHzIndustry standard through-hole power packageHigh-current ratingIncreased ruggednessWide availability from distribution partnersIndustry standard qualificationHigh performance in low frequency applicationsStandard pin-out allows for drop-in replacementHigh current capability IRF530N PinoutThe following figure is the diagram of IRF530N pinout.VDSS = 100VRDS(on) = 0.11ΩID = 17A IRF530N Pinout IRF530N ApplicationsThe IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. IRF530N Circuit DiagramThe followings are the circuit diagrams of IRF530N. Switching Time Test Circuit Switching Time Waveforms Unclamped Inductive Test Circuit Gate Charge Test Circuit IRF530N PackageThe following diagram shows the IRF530N package. IRF530N Package IRF530N SpecificationProduct AttributeAttribute ValueManufacturer:Infineon TechnologiesProduct Category:MOSFETTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:100 VId - Continuous Drain Current:17 ARds On - Drain-Source Resistance:110 mOhmsVgs - Gate-Source Voltage:- 20 V, + 20 VMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 175 CPd - Power Dissipation:79 WChannel Mode:EnhancementBrand:NXP SemiconductorsConfiguration:SingleFall Time:12 nsHeight:9.4 mmLength:10.3 mmProduct Type:MOSFETRise Time:36 nsSubcategory:MOSFETsTransistor Type:1 N-ChannelTypical Turn-Off Delay Time:18 nsTypical Turn-On Delay Time:6 nsWidth:4.5 mm IRF530N ManufacturerON Semiconductor is a Fortune 500 company driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power and signal management, logic, standard and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and military/aerospace applications. IRF530N DatasheetYou can download IRF530N datasheet from the link given below:IRF530N Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. IRF530N FAQWhat is a N-channel MOSFET?Channel MOSFET is a type of metal oxide semiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). How does N-channel mosfet activate?Channel – For an N-Channel MOSFET, the source is connected to ground. To turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we need to connect the gate to ground. P-Channel – The source is connected to the power rail (Vcc). What is N channel mosfet used for?Then the P-channel MOSFET is used to switch the positive supply to the motor for forward direction (high-side switching) while the N-channel MOSFET is used to switch the negative supply to the motor for reverse direction (low-side switching). Why N channel mosfet is widely used?The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. The N-channel transistor has lower on-resistance and gate capacitance for the same die area. How do you drive an N channel Mosfet?Use a N-Channel MOSFET with Source connected to 0V (either directly or via a current limiting resistor) and the load connected to Drain. Whenever the Gate voltage exceeds the Source voltage by at least the Gate Threshold Voltage the MOSFET conducts. The higher the voltage, the more the Mosfet can conduct.