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2N7002P Mosfet: Datasheet, Pinout, Features [FAQ]

  • Contents

Product Overview

The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.

 

This blog will introduce 2N7002P systematically from its features, pinout to its specifications, applications, also including 2N7002P datasheet and so much more.

 

Catalog

Product Overview

2N7002P Features

2N7002P Pinout

2N7002P Applications

2N7002P Symbol and Footprint

2N7002P Package outline

2N7002P Specification

2N7002P Manufacturer

2N7002P Datasheet

Using Warnings

2N7002P FAQ

 

2N7002P Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified

 

2N7002P Pinout

The following figures are the diagrams of 2N7002P pinout.

 

Simplified outline

Simplified outline

 

Graphic symbol

Graphic symbol

 

2N7002P Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

 

2N7002P Symbol and Footprint

The followings are 2N7002P Symbol, Footprint.

 

2N7002P Symbol

2N7002P Symbol

 

2N7002P Footprint

2N7002P Footprint

 

2N7002P Package outline

The following figure is the diagram of 2N7002P Package outline.

 

Package outline

Package outline

 

2N7002P Specification

TYPE DESCRIPTION
Category Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25掳C 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55C ~ 150C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number 2N7002

 

2N7002P Manufacturer

Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia annually ships more than 90 billion products, meeting the stringent standards set by the automotive industry.

 

2N7002P Datasheet

You can download this datasheet for 2N7002P Datasheet from the link given below:

2N7002P Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

2N7002P FAQ

What is N-channel enhancement mode MOSFET?

In n-channel enhancement mode, no current flows through the transistor until the voltage at the gate and terminal source exceed the minimum voltage cut in value. If the voltage at the drain and the terminal source is applied then even there is no evident flow of the current.

 

What is N-channel depletion MOSFET?

Figure shows the construction of an N-channel depletion MOSFET. It consists of a highly doped P-type substrate into which two blocks of heavily doped N-type material are diffused forming the source and drain. An N-channel is formed by diffusion between the source and drain.

 

How does enhancement mode work in MOSFET?

In an enhancement-mode MOSFET, the electrostatic field created by the application of a gate voltage enhances the conductivity of the channel, rather than deplete the channel as in the case of a depletion-mode MOSFET.

 

How channel is created in Enhancement MOSFET?

Both the Depletion and Enhancement type MOSFETs use an electrical field produced by a gate voltage to alter the flow of charge carriers, electrons for n-channel or holes for P-channel, through the semiconductive drain-source channel.

 

Why is NMOS preferred over PMOS?

NMOS circuits offer a speed advantage over PMOS due to smaller junction areas. Since the operating speed of an MOS IC is largely limited by internal RC time constants and capacitance of diode is directly proportional to its size, an n-channel junction can have smaller capacitance. This, in turn, improves its speed.

2N7002P Documents & Media

Download datasheets and manufacturer documentation for NXP Semiconductors 2N7002P.
Datasheets

2N7002P PCB Symbol, Footprint & 3D Model

NXP Semiconductors 2N7002P

NXP Semiconductors

Description: 360mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3

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