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FDC3535 P-Channel Power Trench MOSFET Datasheet PDF Download [FAQ]

  • Contents

Catalog

Features

General Description

Applications

MOSFET Maximum Ratings

Electrical Characteristics

Typical Characteristics

Datasheet PDF Download

FAQ

 

Features

„ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A

„ Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A

„ High performance trench technology for extremely low rDS(on)

„ High power and current handling capability in a widely used surface mount package

„ Fast switching speed

„ 100% UIL Tested

„ RoHS Compliant

 

General Description

This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench process that has been optimized for rDS(on), switching performance and ruggedness.

 

Applications

„ Load Switch

„ Synchronous Rectifier

 

MOSFET Maximum Ratings

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

-80

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current  -Continuous (Note 1a)

-2.1

A

-Pulsed

-10

EAS

Single Pulse Avalanche Energy (Note 3)

37

mJ

PD

Power Dissipation (Note 1a)

1.6

W

Power Dissipation (Note 1b)

0.7

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

 

Thermal Characteristics

RqJC

Thermal Resistance, Junction to Case

30

 

°C/W

RqJA

Thermal Resistance, Junction to Ambient (Note 1a)

78

 

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

.535

FDC3535

SSOT-6

7 ’’

8 mm

3000 units

 

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

 

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = -250 mA, VGS = 0 V

-80

 

 

V

DBVDSS

DTJ

Breakdown Voltage Temperature Coefficient

ID = -250 mA, referenced to 25 °C

 

-64

 

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = -64 V, VGS = 0 V

 

 

-1

mA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

 

 

±100

nA

 

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250 mA

-1

-1.6

-3

V

 DVGS(th) 

DTJ

Gate to Source Threshold Voltage Temperature Coefficient

ID = -250 mA, referenced to 25 °C

 

5

 

mV/°C

 

rDS(on)

 

Static Drain to Source On Resistance

VGS = -10 V, ID = -2.1 A

 

147

183

 

mW

VGS = -4.5 V, ID = -1.9 A

 

176

233

VGS = -10 V, ID = -2.1 A, TJ = 125 °C

 

246

307

gFS

Forward Transconductance

VDD = -10 V, ID = -2.1 A

 

6.3

 

S

 

Dynamic Characteristics

Ciss

Input Capacitance

VDS = -40 V, VGS = 0 V,

f = 1 MHz

 

659

880

pF

Coss

Output Capacitance

 

49

65

pF

Crss

Reverse Transfer Capacitance

 

24

40

pF

Rg

Gate Resistance

 

 

5.7

 

W

 

Switching Characteristics

td(on)

Turn-On Delay Time

 

VDD = -40 V, ID = -2.1 A, VGS = -10 V, RGEN = 6 W

 

6.5

13

ns

tr

Rise Time

 

3.1

10

ns

td(off)

Turn-Off Delay Time

 

23

38

ns

tf

Fall Time

 

2.9

10

ns

Qg(TOT)

Total Gate Charge

VGS = 0 V to -10 V

 

VDD = -40 V

 

14

20

nC

Total Gate Charge

VGS = 0 V to -4.5 V

 

6.8

10

nC

Qgs

Total Gate Charge

ID = -2.1 A

 

1.6

 

nC

Qgd

Gate to Drain “Miller” Charge

 

2.7

 

nC

 

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = -2.1 A (Note 2)

 

-0.81

-1.3

V

trr

Reverse Recovery Time

IF = -2.1 A, di/dt = 100 A/ms

 

25

40

ns

Qrr

Reverse Recovery Charge

 

23

38

nC

 

Typical Characteristics

Figure-FDC3535-Typicak-Characteristics

 

Figure-FDC3535-Typicak-Characteristics-02

 

Figure-FDC3535-Typicak-Characteristics-03

 

Datasheet PDF Download

You can download the datasheet from the link given below.

FDC3535-Datasheet

 

FAQ

What is power Trench MOSFET?

A trench gate MOSFET is basically an attempt to make a complete chip. conduct the current vertically from one surface to the other so as to achieve a high. drive capability. It is realized by packing millions of trenches on a chip, deep. enough to cross the oppositely doped 'body' region below the top surface.

 

What is the difference between MOSFET and power MOSFET?

A power MOSFET is a type of MOSFET that is designed specifically to handle high levels of power. These have a high switching speed and can perform much better in low voltage levels than other types of MOSFETs. Its operating principle, however, is similar to that of any other general MOSFET.

 

How much power can a MOSFET handle?

Modern MOSFETs can have on resistances of less than 10 milliohms. A little math shows that this device can handle 10 amps with one watt converted into waste heat (power = current2 x resistance). Since many MOSFETs come in TO-220 packages, no heatsink is needed in this instance.

 

ON Semiconductor FDC3535

ON Semiconductor

MOSFET MOSFET; -80V P-Chan PowerTrench

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