The Kynix Components

CatalogDescriptionFeaturesCapture and Analyze Voltage or Current TransitionsDMM6500 Measurement CapabilitiesMulti-channel/Scanning ApplicationsTemperature Measurement ApplicationsSystem Integration and ProgrammingDatasheetSpecificationsManufacturerUsing WarningFAQDescriptionThe DMM6500 is a modern bench/system DMM delivering more measurement functionality, best-in-class measurement insight, and a price that will not break your budget. The most recognizable feature of the DMM6500 is the large 5-inch (12.7 cm) capacitive touch screen display that makes it easy to observe, interact with, and explore measurements with ’pinch and zoom’ simplicity. Beyond its display technology, the DMM 6500 superior analog measurement performance delivers 25 PPM basic DCV accuracy for one year and 30 PPM for two years, potentially allowing you to extend your calibration cycles. The DMM6500 is equipped with all the measurement functions you would expect in a bench multimeter, so there’s no need to buy additional measurement capabilities. Its 15 measurement functions, including capacitance, temperature (RTD, thermistor, and thermocouple), diode test with variable current sources, and up to 1 MS/sec digitizing are now included. The digitizing function can be used for voltage or current and is especially useful in capturing transient anomalies or to help profile power events such as the operating states of today’s battery operated devices. Current and voltage can be digitized with a programmable 1 MS/sec 16-bit digitizer, making it possible to acquire waveforms without the need for a separate instrument. Features15 measurement functions including capacitance, temperature, and digitizingExpanded measurement ranges include 10 pA to 10 A and 1 mΩ to 100 MΩ Large 5-inch (12.7 cm) multi-touch capacitive touchscreen with graphical displayLarge internal memory; store up to 7 million readingsMultiple language modes: SCPI, TSP® scripting, Keithley 2000 SCPI emulation, Keysight 34401A SCPI emulationTwo-year specifications allow for longer calibration cyclesStandard USB-TMC and LXI/Ethernet communication interfacesOptional user-installable communication interfaces including: GPIB, TSP-Link®, and RS-232Capture voltage or current transients with 1 MS/sec digitizerUSB host port for storing readings, instrument configurations, and screen imagesThree-year warranty Capture and Analyze Voltage or Current TransitionsPower analysis is becoming more important in today’s electronic designs. Designers must now consider more efficient components and complex system design typically requiring multiple power states. The DMM6500 has the tools you need to help design and troubleshoot these complex systems. Eight different current ranges allow measurements from 10 amps down to 10 pico-amps, giving you the dynamic range to measure your power states. In addition, a built-in 1 MS/sec digitizing function can help capture transient events, allowing you to see and analyze transitions as they occur. Figure: Pinch and Zoom Simplicity for In-depth Waveform Analysis Figure: Visualize and Analyze Waveforms Using Adjustable Cursors and Statistics DMM6500 Measurement Capabilities Figure: DMM6500 Measurement Capabilities Multi-channel/Scanning ApplicationsWhen characterizing or profiling your design it is often critical to make a series of measurements. In these applications the need for automated multi-channel measurements is advantageous. The DMM6500 is equipped with a scanner card slot allowing up to 10 channels of switching, giving you the capability to make automated multi-channel measurements. Plugging in the 2000-SCAN card gives users up to 10 channels of 2-pole measurements or 5 channels of 4-pole measurements. Functions can be programmed on a per-channel basis if supported by the switch topology.  Figure:2000-SCAN 10-Channel Multiplexer Temperature Measurement ApplicationsTemperature is one of the most measured signal types in the world, and the DMM6500 has many options to help you make this measurement. Besides RTD, thermistor, and thermocouple functions, you can equip your DMM with a nine-channel scanner card with built-in CJC for automated thermocouple temperature scanning. This feature is very useful when your design requires thermal profiling, especially when enclosed in a temperature chamber.  Figure:2001-TCSCAN 9-Channel Thermocouple Multiplexer and DMM6500 Rear Panel System Integration and ProgrammingUsers have maximum programming flexibility with the DMM6500. In addition to traditional SCPI programming (default), the unit can also be configured for SCPI emulation for the Keithley 2000 or the Keysight 34401A. Additionally, Keithley’s powerful Test Script Processor (TSP®) programming is another option that allows unique single- or multi-instrument testing applications where speed is critical. Figure:Tsp System Using Tsp Link for Instrument to Instrument Communication DatasheetYou can download the datasheet from the link given below:DMM6500-Datasheet SpecificationsManufacturer:Keithley Instruments, Inc.Product Category:Digital MultimetersProduct:MultimetersType:MultifunctionNumber of Digits:6 1/2 DigitVoltage Range:100 mVAC to 750 VAC, 100 mVDC to 1 kVDCResistance Range:1 Ohms to 100 MOhmsCapacitance Range:1 nF to 100 uFFrequency:50 Hz to 60 HzRanging:AutoTrue RMS:True RMSData Hold:Data HoldLength:387.4 mmWidth:224 mmHeight:107.2 mmBrand:Keithley Instruments, Inc.Cable Type:USB Type A to USB Type BCurrent Rating:2 mAProduct Type:MultimetersSeries:DMMFactory Pack Quantity:1Subcategory:Test EquipmentUnit Weight:10 lbs ManufacturerKeithley Instruments is a measurement and instrument company headquartered in Solon, Ohio, that develops, manufactures, markets, and sells data acquisition products, as well as complete systems for high-volume production and assembly testing. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQWhat are digital multimeters used for?Digital multimeters are measuring instruments that can measure quantities such as voltage, current, and resistance. Measured values are shown on a digital display, allowing them to be read easily and directly, even by first-time users. How does digital multimeter work?A digital ammeter uses a shunt resistor to produce a calibrated voltage proportional to the current flowing. As shown in the diagram, to read the current we must first convert the current to be measured into a voltage by using a known resistance RK. The voltage so developed is calibrated to read the input current. Is a digital voltmeter the same as a multimeter?The newer digital models are often abbreviated “DMM” for, you guessed it, Digital Multimeter. ... If you need to measure voltage, then you a voltmeter is sufficient, but if you want to measure voltage and other things such as resistance and current, then you are going to have to go with a multimeter. 

CatalogProduct OverviewBD139 Related Video IntroductionBD139 CAD ModelsBD139 Internal Schematic DiagramBD139 Packaging DimensionsBD139 FeaturesBD139 ApplicationsBD139 DatasheetBD139 SpecificationsBD139 ManufacturerUsing WarningBD139 FAQ Product OverviewThese epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. BD139 Related Video IntroductionBD139 Video Description: How to make Auto ON OFF Led light use NPN BD139, diy dark sensorToday i will show you how to make automatic on and off led light using npn transistor bd139 and LDR sensor, diy dark sensor simple and easy electronics projects make at home.auto on off led light electronics project.I hopeful this video will be helpful for you and your friends please like,share and subscribe for more videos. BD139 CAD ModelsFigure: BD139 PCB Symbol  Figure: BD139 Footprint  Figure: BD139 3D Models BD139 Internal Schematic DiagramFigure: BD139 Internal Schematic Diagram BD139 Packaging DimensionsFigure: BD139 Packaging Dimensions BD139 Features■ Products are pre-selected in DC current gain BD139 Applications■ General purpose BD139 DatasheetYou can download the datasheet from the link given below:BD139 Datasheet BD139 SpecificationsProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:Bipolar Transistors - BJTMounting Style:Through HolePackage / Case:SOT-32-3Transistor Polarity:NPNConfiguration:SingleCollector- Emitter Voltage VCEO Max:80 VCollector- Base Voltage VCBO:80 VEmitter- Base Voltage VEBO:5 VCollector-Emitter Saturation Voltage:0.5 VMaximum DC Collector Current:1.5 APd - Power Dissipation:12.5 WMinimum Operating Temperature:- 65°CMaximum Operating Temperature:+ 150°CSeries:BD139Packaging:TubeBrand:STMicroelectronicsContinuous Collector Current:1.5 ADC Collector/Base Gain hfe Min:40DC Current Gain hFE Max:250Height:10.8 mmLength:7.8 mmProduct Type:BJTs - Bipolar TransistorsSubcategory:TransistorsTechnology:SiWidth:2.7 mmUnit Weight:0.002116 oz BD139 ManufacturerSTMicroelectronics is a French-Italian multinational electronics and semiconductors manufacturer headquartered in Plan-les-Ouates near Geneva, Switzerland. The company resulted from the merger of two government-owned semiconductor companies in 1987: "Thomson Semiconducteurs" of France and "SGS Microelettronica" of Italy. It is commonly called "ST", and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in the Canton of Geneva, the holding company, STMicroelectronics N.V. is incorporated in the Netherlands. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. BD139 FAQWhat is BD139?BD139 is a Bipolar NPN transistor, it is mounted in the SOT-32 plastic package. It is designed for audio amplifier and driver utilizing complementary circuits. BD139 has a gain value of 40 to 160, which determine the amplification capacity of a transistor. What is BD139 used for?A Bipolar NPN transistor like BD139 is available in the SOT-32 plastic package. This kind of transistor is used in different electronic circuits because of less cost and high collector current. This transistor can drive upto 1.5A loads like motors, high power LEDs, relays, etc. How does BD139 work?BD139 is a Bipolar NPN transistor, it is mounted in the SOT-32 plastic package. BD139 has a gain value of 40 to 160, which determine the amplification capacity of a transistor. It has three main pinouts which are a collector, base and emitter. It is used to control (On/Off) bigger loads that consume less than 1.5A. 

CatalogDescriptionCAD ModelsFunctional DiagramFeaturesApplicationsDatasheetSpecificationsManufacturerUsing WarningFAQDescriptionThe ADRV9026 is a highly integrated, radio frequency (RF) agile transceiver offering four independently controlled transmitters, dedicated observation receiver inputs for monitoring each transmitter channel, four independently controlled receivers, integrated synthesizers, and digital signal processing functions providing a complete transceiver solution. The device provides the performance demanded by cellular infrastructure applications,such as small cell base station radios, macro 3G/4G/5G systems, and massive multiple in/multiple out (MIMO) base stations. The receiver subsystem consists of four independent, wide bandwidth, direct conversion receivers with wide dynamic range. The four independent transmitters use a direct conversion modulator resulting in low noise operation with low power consumption. The device also includes two wide bandwidth, time shared, observation path receivers with two inputs each for monitoring transmitter outputs. The complete transceiver subsystem includes automatic and manual attenuation control, dc offset correction, quadrature error correction (QEC), and digital filtering, eliminating the need for these functions in the digital baseband. Other auxiliary functions such as analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and general-purpose input/outputs (GPIOs) that provide an array of digital control options are also integrated. To achieve a high level of RF performance, the transceiver includes five fully integrated phase-locked loops (PLLs). Two PLLs provide low noise and low power fractional-N RF synthesis for the transmitter and receiver signal paths. A third fully integrated PLL supports an independent local oscillator (LO) mode for the observation receiver. The fourth PLL generates the clocks needed for the converters and digital circuits, and a fifth PLL provides the clock for the serial data interface. A multichip synchronization mechanism synchronizes the phase of all LOs and baseband clocks between multiple ADRV9026 chips. All voltage controlled oscillators (VCOs) and loop filter components are integrated and adjustable through the digital control interface. The serial data interface consists of four serializer lanes and four deserializer lanes. The interface supports both the JESD204B and JESD204C standards, operating at data rates up to 24.33 Gbps. The interface also supports interleaved mode for lower bandwidths, thus reducing the number of high speed data interface lanes to one. Both fixed and floating-point data formats are supported. The floating-point format allows internal automatic gain control (AGC) to be invisible to the demodulator device. The ADRV9026 is powered directly from 1.0 V, 1.3 V, and 1.8 V regulators and is controlled via a standard serial peripheral interface (SPI) serial port. Comprehensive powerdown modes are included to minimize power consumption in normal use. The ADRV9026 is packaged in a 14 mm × 14 mm, 289-ball chip scale ball grid array (CSP_BGA). CAD Models Figure: Footprint  Figure: 3D Model Functional Diagram Figure: Functional Diagram Features4 differential transmitters4 differential receivers2 observation receivers with 2 inputs eachCenter frequency: 75 MHz to 6000 MHzMaximum receiver bandwidth: 200 MHzMaximum transmitter large signal bandwidth: 200 MHzMaximum transmitter synthesis bandwidth: 450 MHzMaximum observation receiver bandwidth: 450 MHzFully integrated independent fractional-N radio frequency synthesizersFully integrated clock synthesizerMultichip phase synchronization for all local oscillators and baseband clocksSupport for TDD and FDD applications24.33 Gbps JESD204B/JESD204C digital interface Applications3G/4G/5G TDD and FDD massive MIMO, macro and small cell base stations DatasheetYou can download the datasheet from the link given below:ADRV9026BBCZ-Datasheet SpecificationElectrical characteristics at ambient temperature range. Power supplies are as follows: VDDA_1P8 = 1.8 V, VIF = 1.8 V, VDDA_1P3 = 1.3 V, VDDA_1P0 = 1.0 V, and VDIG_1P0 = 1.0 V. VDDA_1P8 represents VCONV1_1P8, VCONV2_1P8, VANA1_1P8, VANA2_1P8, VANA3_1P8, VANA4_1P8, and VJVCO_1P8. VDDA_1P3 represents VANA1_1P3, VANA2_1P3, VCONV1_1P3, VCONV2_1P3, VRFVCO1_1P3, VRFVCO2_1P3, VAUXVCO_1P3, VCLKVCO_1P3, VRFSYN1_1P3, VRFSYN2_1P3, VCLKSYN_1P3, VAUXSYN_1P3, VRXLO_1P3, and VTXLO_1P3. VDDA_1P0 represents VJSYN_1P0, VDES_1P0, VTT_DES, and VSER_1P0. All RF specifications are based on measurements that include printed circuit board (PCB) and matching circuit losses, unless otherwise noted. Device configuration profile: Receiver = 200 MHz bandwidth, I/Q rate = 245.76 MHz, transmitter = 200 MHz large signal bandwidth plus 450 MHz synthesis bandwidth, I/Q rate = 491.52 MHz, observation receiver (ORX) = 450 MHz bandwidth, I/Q rate = 491.52 MHz, device clock = 245.76 MHz, unless otherwise noted. Characterization at 75 MHz followed this profile: Receiver = 62.5 MHz bandwidth, I/Q rate = 76.8 MHz, transmitter = 62.5 MHz large signal bandwidth plus 141 MHz synthesis bandwidth, I/Q rate = 153.6 MHz, observation receiver = 141 MHz bandwidth, I/Q rate = 153.6 MHz, device clock = 153.6 MHz. Product AttributesSource Content uid:ADRV9026BBCZManufacturer Part Number:ADRV9026BBCZBrand Name:Analog Devices IncRohs Code: YesPart Life Cycle Code:ActivePackage Description:LFBGA, BGA289,17X17,32Pin Count:289Manufacturer Package Code:BC-289-6Reach Compliance Code:compliantECCN Code:5A991.BHTS Code:8542.39.00.01Manufacturer:Analog Devices IncRisk Rank:2.35Additional Feature:ALSO OPERATES IN 1.3V AND 1.8V NOMINAL VOLTAGEJESD-30 Code:S-PBGA-B289Length:14 mmNumber of Functions:4Number of Terminals:289Operating Temperature-Max:110 °COperating Temperature-Min:-40 °CPackage Body Material:PLASTIC/EPOXYPackage Code:LFBGAPackage Equivalence Code:BGA289,17X17,32Package Shape:SQUAREPackage Style:GRID ARRAY, LOW PROFILE, FINE PITCHSeated Height-Max:1.46 mmSupply Voltage-Nom:1 VSurface Mount:YESTelecom IC Type:TELECOM CIRCUITTemperature Grade:INDUSTRIALTerminal Form:BALLTerminal Pitch:0.8 mmTerminal Position:BOTTOMWidth:14 mm ManufacturerAnalog Devices, Inc. (ADI), also known simply as Analog, is an American multinational semiconductor company specializing in data conversion, signal processing and power management technology, headquartered in Wilmington, Massachusetts. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQWhat is the function of RF transceiver?RF Transceiver is used to convert IF frequency to RF frequency and vice versa. It is used in satellite communication, for radio transmission and reception,for television signal transmission and reception, and in wimax/wlan/zigbee/lte networks. What is the purpose of a transceiver?The transceiver is an important part of a fiber optics network and is used to convert electrical signals to optical (light) signals and optical signals to electrical signals. It can be plugged into or embedded into another device within a data network that can send and receive a signal. What is a transceiver device?A transceiver is a combination transmitter/receiver in a single package. While the term typically applies to wireless communications devices, it can also be used for transmitter/receiver devices in cable or optical fiber systems. 

CatalogProduct OverviewBSS123 Related Video IntroductionBSS123 CAD ModelsBSS123 Marking DiagramBSS123 Package DimensionsBSS123 FeaturesBSS123 ApplicationsBSS123 DatasheetBSS123 SpecificationsBSS123 ManufacturerUsing WarningBSS123 FAQ Product OverviewThese N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. BSS123 Related Video IntroductionBSS123 Video Description: Today I am going to explain you about N-Channel logic level enhancement mode power field effect transistor. we learn why used in laptop this smd component. BSS123 CAD ModelsFigure: BSS123 PCB Symbol   Figure: BSS123 Footprint   Figure: BSS123 3D Models BSS123 Marking DiagramFigure: BSS123 Marking DiagramSA = Specific Device CodeM = Date Code*(Note: Microdot may be in either location)*Date Code orientation and/or position may vary depending upon manufacturing location. BSS123 Package DimensionsFigure: BSS123 Package Dimensions BSS123 Features0.17 A, 100 V♦ RDS(on) = 6  @ VGS = 10 V♦ RDS(on) = 10  @ VGS = 4.5 VHigh Density Cell Design for Extremely Low RDS(on)Rugged and ReliableCompact Industry Standard SOT−23 Surface Mount PackageThis Device is Pb−Free and Halogen Free BSS123 DatasheetYou can download the datasheet from the link given below:BSS123 Datasheet BSS123 SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:SMD/SMTPackage / Case:SOT-23-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:100 VId - Continuous Drain Current:170 mARds On - Drain-Source Resistance:6 OhmsVgs - Gate-Source Voltage:- 20 V, + 20 VVgs th - Gate-Source Threshold Voltage:800 mVQg - Gate Charge:2.5 nCOperating Temperature:-55°C ~ 150°C (TJ)Pd - Power Dissipation:300 mWChannel Mode:EnhancementBrand:onsemi / FairchildConfiguration:SingleFall Time:9 nsForward Transconductance - Min:0.8 SHeight:1.2 mmLength:2.9 mmProduct:MOSFET Small SignalProduct Type:MOSFETRise Time:9 nsSeries:BSS123Subcategory:MOSFETsTransistor Type:1 N-ChannelType:FETTypical Turn-Off Delay Time:17 nsTypical Turn-On Delay Time:1.7 nsWidth:1.3 mmPart # Aliases:BSS123_NLUnit Weight:0.000282 oz BSS123 ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. BSS123 FAQWhat is BSS123?The BSS123 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor that comes in surface mount package SOT-23. It is a rugged and reliable device that comes with a drain-source voltage of around 100V while the gate-source voltage is -+20V. What is an N-channel enhancement mode MOSFET?In n-channel enhancement mode, no current flows through the transistor until the voltage at the gate and terminal source exceed the minimum voltage cut in value. If the voltage at the drain and the terminal source is applied then even there is no evident flow of the current. What are the two main types of field effect transistors?There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). 

Product OverviewThe IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. This blog will introduce IRF740systematically from its features, pinout to its specifications, applications, also including IRF740 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionIRF740 FeaturesIRF740 PinoutPin ConfigurationIRF740 ApplicationsIRF740 EquivalentsIRF740 Circuit DiagramIRF740 PackageIRF740 SpecificationIRF740 ManufacturerIRF740 DatasheetUsing WarningsIRF740 FAQ Related Video Introduction Video: MOSFET IRF740 (getting to know it) IRF740 Video Description: My first look at a MOSFET, so just a basic circuit to test it out as a switch for a motor. IRF740 FeaturesDynamic dV/dt ratingRepetitive avalanche ratedFast switchingEase of parallelingSimple drive requirements IRF740 PinoutThe following figure is the diagram of IRF740 pinout. IRF740 Pinout Pin ConfigurationPin NumberPin NameDescription1SourceCurrent flows out through Source (maximum 10A)2GateControls the biasing of the MOSFET (Threshold voltage 10V)3DrainCurrent flows in through Drain IRF740 ApplicationsSwitching high power devicesInverter CircuitsDC-DC ConvertersControl speed of motorsLED dimmers or flashersHigh Speed switching applications IRF740 EquivalentsIRFB13N50A, UF450A, SSF13N15 IRF740 Circuit DiagramThe following is the circuit diagram of IRF740. Switching Time Test Circuit 13b - Gate Charge Test Circuit IRF740 PackageThe following diagram shows the IRF740package. IRF740 Package IRF740 SpecificationProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:MOSFETTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:400 VId - Continuous Drain Current:10 ARds On - Drain-Source Resistance:550 mOhmsVgs - Gate-Source Voltage:- 20 V, + 20 VMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CPd - Power Dissipation:125 WChannel Mode:EnhancementPackaging:TubeConfiguration:SingleForward Transconductance - Min:4 SHeight:9.15 mmLength:10.4 mmRise Time:10 ns IRF740 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. IRF740 DatasheetYou can download IRF740 datasheet from the link given below:IRF740 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. IRF740 FAQWhat is IRF740?The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Hence this mosfet cannot be used in applications where high switching efficiency is required. What are MOSFET transistors used for?The purpose of a MOSFET transistor is essentially to control voltage/current flow between the source and the drain. What is N-channel Mosfet?A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. What are power MOSFETs used for?Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. How does N-channel MOSFET transistor work?The working of the n-channel MOSFET is based on the majority of the carriers that are electrons. These electrons move in the channel is responsible for the flow of current in the transistor. The p-substrate material is required in the formation of the gate terminals.

CatalogProduct OverviewFDV301N Related Video IntroductionFDV301N CAD ModelsFDV301N Pin configurationFDV301N Marking DiagramFDV301N Package DimensionsFDV301N FeaturesFDV301N Inverter ApplicationFDV301N DatasheetFDV301N SpecificationsFDV301N ManufacturerUsing WarningFDV301N FAQ Product OverviewThis N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. FDV301N Related Video IntroductionFDV301N Video Description: Step by step Testing Tutorial N-Channel P-Channel Mosfet using Digital Multimeter. FDV301N CAD ModelsFigure: FDV301N PCB Symbol   Figure: FDV301N Footprint   Figure: FDV301N 3D Models FDV301N Pin configurationFigure: FDV301N PinoutFDV301N is a three pin device as shown in figure and the function of each of those pins is stated below. PinNameFunction1DrainCurrent comes in to the device from this pin.2GateMOSFET gets turned ON and OFF depending on voltage applied at this pin.3SourceCurrent which comes in to the device goes out through this pin. This pin is usually connected to ground. FDV301N Marking DiagramFigure: FDV301N Marking Diagram &E = Designates Space&Y = Binary Calendar YearCoding Scheme301 = Specific Device Code&G = Date Code FDV301N Package DimensionsFigure: FDV301N Package Dimensions FDV301N Features25 V, 0.22 A Continuous, 0.5 A Peak♦ RDS(on) = 5  @ VGS = 2.7 V♦ RDS(on) = 4  @ VGS = 4.5 VVery Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 VGate−Source Zener for ESD Ruggedness. > 6 kV Human BodyModelReplace Multiple NPN Digital Transistors with One DMOS FETThis Device is Pb−Free and Halide Free FDV301N Inverter ApplicationFigure: FDV301N Inverter Application FDV301N DatasheetYou can download the datasheet from the link given below:FDV301N Datasheet FDV301N SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:SMD/SMTPackage / Case:SOT-23-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:25 VId - Continuous Drain Current:220 mARds On - Drain-Source Resistance:5 OhmsVgs - Gate-Source Voltage:- 8 V, + 8 VVgs th - Gate-Source Threshold Voltage:700 mVQg - Gate Charge:700 pCOperating Temperature:-55°C ~ 150°C (TJ)Pd - Power Dissipation:350 mWChannel Mode:EnhancementBrand:onsemi / FairchildConfiguration:SingleFall Time:6 nsForward Transconductance - Min:0.2 SHeight:1.2 mmLength:2.9 mmProduct:MOSFET Small SignalProduct Type:MOSFETRise Time:6 nsSeries:FDV301NSubcategory:MOSFETsTransistor Type:1 N-ChannelType:FETTypical Turn-Off Delay Time:3.5 nsTypical Turn-On Delay Time:3.2 nsWidth:1.3 mmPart # Aliases:FDV301N_NLUnit Weight:0.000282 oz FDV301N ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FDV301N FAQWhat is FDV301N?FDV301N is semiconductor device called MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is used as a high speed switching device in applications. The device is an N-Channel enhancement mode Field Effect Transistor that is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. What does N channel mean?Channel MOSFET is a type of metal oxidesemiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET). What is N and P channel?N channel MOSFETs are fast switching devices. The N channel MOSFETs are TTL compatible. As the applied gate voltage and drain supply are positive for an n-channel enhancement MOSFET. The drain resistance of P channel MOSFET is 3 times higher than that for an identical N-channel MOSFET.