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FDV301N N-Channel: CAD Models, Datasheet, Features [Video&FAQ]

  • Contents

Catalog

Product Overview

FDV301N Related Video Introduction

FDV301N CAD Models

FDV301N Pin configuration

FDV301N Marking Diagram

FDV301N Package Dimensions

FDV301N Features

FDV301N Inverter Application

FDV301N Datasheet

FDV301N Specifications

FDV301N Manufacturer

Using Warning

FDV301N FAQ

 

Product Overview

This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.

 

FDV301N Video Description: Step by step Testing Tutorial N-Channel P-Channel Mosfet using Digital Multimeter.

 

FDV301N CAD Models

FDV301N PCB Symbol

Figure: FDV301N PCB Symbol

 

 

 FDV301N Footprint

Figure: FDV301N Footprint

 

 

 FDV301N 3D Models

Figure: FDV301N 3D Models

 

FDV301N Pin configuration

FDV301N Pinout

Figure: FDV301N Pinout

FDV301N is a three pin device as shown in figure and the function of each of those pins is stated below.

 

Pin Name Function
1 Drain Current comes in to the device from this pin.
2 Gate MOSFET gets turned ON and OFF depending on voltage applied at this pin.
3 Source Current which comes in to the device goes out through this pin. This pin is usually connected to ground.

 

FDV301N Marking Diagram

FDV301N Marking Diagram

Figure: FDV301N Marking Diagram

 

&E = Designates Space

&Y = Binary Calendar Year

Coding Scheme

301 = Specific Device Code

&G = Date Code

 

FDV301N Package Dimensions

FDV301N Package Dimensions

Figure: FDV301N Package Dimensions

 

FDV301N Features

  • 25 V, 0.22 A Continuous, 0.5 A Peak

♦ RDS(on) = 5  @ VGS = 2.7 V

♦ RDS(on) = 4  @ VGS = 4.5 V

  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
  • Gate−Source Zener for ESD Ruggedness. > 6 kV Human BodyModel
  • Replace Multiple NPN Digital Transistors with One DMOS FET
  • This Device is Pb−Free and Halide Free

 

FDV301N Inverter Application

FDV301N Inverter Application

Figure: FDV301N Inverter Application

 

FDV301N Datasheet

You can download the datasheet from the link given below:

FDV301N Datasheet

 

FDV301N Specifications

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 220 mA
Rds On - Drain-Source Resistance: 5 Ohms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
Qg - Gate Charge: 700 pC
Operating Temperature: -55°C ~ 150°C (TJ)
Pd - Power Dissipation: 350 mW
Channel Mode: Enhancement
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 6 ns
Forward Transconductance - Min: 0.2 S
Height: 1.2 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Rise Time: 6 ns
Series: FDV301N
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 3.5 ns
Typical Turn-On Delay Time: 3.2 ns
Width: 1.3 mm
Part # Aliases: FDV301N_NL
Unit Weight: 0.000282 oz

 

FDV301N Manufacturer

Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

FDV301N FAQ

What is FDV301N?

FDV301N is semiconductor device called MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is used as a high speed switching device in applications. The device is an N-Channel enhancement mode Field Effect Transistor that is produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

 

What does N channel mean?

Channel MOSFET is a type of metal oxidesemiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET).

 

What is N and P channel?

N channel MOSFETs are fast switching devices. The N channel MOSFETs are TTL compatible. As the applied gate voltage and drain supply are positive for an n-channel enhancement MOSFET. The drain resistance of P channel MOSFET is 3 times higher than that for an identical N-channel MOSFET.

 

FDV301N Documents & Media

Download datasheets and manufacturer documentation for ON Semiconductor FDV301N.

FDV301N PCB Symbol, Footprint & 3D Model

ON Semiconductor FDV301N

ON Semiconductor

MOSFET N-CH 25V 220MA SOT-23

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