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BSS123 Transistor: CAD Models, Datasheet, Features [Video&FAQ]

  • Contents

Catalog

Product Overview

BSS123 Related Video Introduction

BSS123 CAD Models

BSS123 Marking Diagram

BSS123 Package Dimensions

BSS123 Features

BSS123 Applications

BSS123 Datasheet

BSS123 Specifications

BSS123 Manufacturer

Using Warning

BSS123 FAQ

 

Product Overview

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 

BSS123 Video Description: Today I am going to explain you about N-Channel logic level enhancement mode power field effect transistor. we learn why used in laptop this smd component.

 

BSS123 CAD Models

BSS123 PCB Symbol

Figure: BSS123 PCB Symbol

 

 

 BSS123 Footprint

Figure: BSS123 Footprint

 

 

 BSS123 3D Models

Figure: BSS123 3D Models

 

BSS123 Marking Diagram

BSS123 Marking Diagram

Figure: BSS123 Marking Diagram

SA = Specific Device Code

M = Date Code*

(Note: Microdot may be in either location)

*Date Code orientation and/or position may vary depending upon manufacturing location.

 

BSS123 Package Dimensions

BSS123 Package Dimensions

Figure: BSS123 Package Dimensions

 

BSS123 Features

  • 0.17 A, 100 V

♦ RDS(on) = 6  @ VGS = 10 V

♦ RDS(on) = 10  @ VGS = 4.5 V

  • High Density Cell Design for Extremely Low RDS(on)
  • Rugged and Reliable
  • Compact Industry Standard SOT−23 Surface Mount Package
  • This Device is Pb−Free and Halogen Free

 

BSS123 Datasheet

You can download the datasheet from the link given below:

BSS123 Datasheet

 

BSS123 Specifications

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 170 mA
Rds On - Drain-Source Resistance: 6 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Qg - Gate Charge: 2.5 nC
Operating Temperature: -55°C ~ 150°C (TJ)
Pd - Power Dissipation: 300 mW
Channel Mode: Enhancement
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 0.8 S
Height: 1.2 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Rise Time: 9 ns
Series: BSS123
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 1.7 ns
Width: 1.3 mm
Part # Aliases: BSS123_NL
Unit Weight: 0.000282 oz

 

BSS123 Manufacturer

Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

BSS123 FAQ

What is BSS123?

The BSS123 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor that comes in surface mount package SOT-23. It is a rugged and reliable device that comes with a drain-source voltage of around 100V while the gate-source voltage is -+20V.

 

What is an N-channel enhancement mode MOSFET?

In n-channel enhancement mode, no current flows through the transistor until the voltage at the gate and terminal source exceed the minimum voltage cut in value. If the voltage at the drain and the terminal source is applied then even there is no evident flow of the current.

 

What are the two main types of field effect transistors?

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET).

 

PCB Symbol, Footprint & 3D Model

 

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