The Kynix Components

The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications.Product OverviewThe ON Semiconductor MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.Product Features1) Collector − Emitter Breakdown Voltage 40 V2) Pb-Free Packages are Available3) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP CapableCAD ModelsMMBT2222ALT1G Part Symbol MMBT2222ALT1G Footprint MMBT2222ALT1G 3D ModelPackage DimensionsSoldering FootprintMMBT2222ALT1G Product AttributesChannel Type:NJEDEC-95 Code:TO-236JESD-30 Code:R-PDSO-G3JESD-609 Code:e3Lead Finish:Matte TinMax Processing Temp:260Maximum Base Emitter Saturation Voltage:2@50mA@500mA VMaximum Collector Base Voltage:75 VMaximum Collector Emitter Saturation Voltage:1@50mA@500mA VMaximum Collector Emitter Voltage:40 VMaximum DC Collector Current:0.6 AMaximum Emitter Base Voltage:6 VMaximum Power Dissipation:300 mWMinimum DC Current Gain:100@150mA@10VMounting:Surface MountMSL Level:MSL 1 - UnlimitedNumber of Elements:1Operating Temperature:-55 to 150 °CPin Count:3Package Body Material:PLASTIC/EPOXYPackage Shape:RECTANGULARPackage Style:SMALL OUTLINEProduct Dimensions:2.9 x 1.3 x 0.94 mmSupplier Package:SOT-23Type:NPNTerminal Position:DUALTransistor Element Material:SILICONTransition Frequency-Nom (fT):300 MHzTurn-off Time-Max (toff):285 nsTurn-on Time-Max (ton):35 nsECCN:EAR99HTSN:8541210095SCHEDULE B:8541210080MMBT2222ALT1G ApplicationsSignal Processing, Industrial, AutomotiveAlternate ProductsPMBT2222, MMBT2222ALT3, TMPT4401, MMBT2222ALT1, MMBT2222AL, MMBT2222A-GS18, MMBT2222AT, 933846830215, MMBT2222AT, TMPT4401, MMBT2222ALT1, PMBT2222, MMBT2222A-GS18, 933846830215, MMBT2222ALT3, KST2222AMTF_NL, MMBT2222AL, UMT2222AT106Using WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

This 3.0W Plastic Surface Mount Zener diode is designed for general purpose voltage regulation applications.CatalogProduct OverviewCAD ModelsPackage DimensionsSoldering Footprint1SMb5919BT3G Features1SMb5919BT3G Product Attributes1SMb5919BT3G ApplicationsSimilar PartsUsing WarningsProduct OverviewThe 1SMB5919BT3G is a surface mount Zener Voltage Regulator Diode with a void-free transfer-molded thermosetting plastic case, all external surfaces are corrosion-resistant and leads are readily solderable finish and cathode indicated by polarity. This Zener diode is designed for general-purpose voltage regulation applications.CAD Models1SMb5919BT3G Symbol 1SMb5919BT3G Footprint 1SMb5919BT3G 3D ModelPackage DimensionsPackage DimensionsSoldering FootprintSoldering Footprint1SMb5919BT3G Features• Zener Voltage Range 5.6 V• ESD Rating of Class 3 (>16 KV) per Human Body Model• Flat Handling Surface for Accurate Placement• Package Design for Top Side or Bottom Circuit Board Mounting• Pb-Free Package are Available• AEC-Q101 Qualified and PPAP Capable• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements1SMb5919BT3G Product AttributesCase/PackageSMBContact PlatingTinMaterialPlasticNumber of Pins2Breakdown Voltage5.88 VElement ConfigurationSingleESD ProtectionYesForward Voltage1.5 VImpedance2 ΩMax Operating Temperature150 °CMax Power Dissipation3 WMax Reverse Leakage Current5 µAMin Operating Temperature-65 °CPackagingCut TapePeak Reverse Current5 µAPower Dissipation550 mWPower Rating3 WSchedule B8541100050Test Current66.9 mATolerance5 %Voltage Rating (DC)5.6 VVoltage Tolerance5 %Working Voltage5.6 VZener Current267 mAZener Voltage5.6 VHeight2.13 mmLength4.32 mmWidth3.56 mmHalogen FreeHalogen FreeLead FreeLead FreeRadiation HardeningNoREACH SVHCNo SVHCRoHSCompliant1SMb5919BT3G ApplicationsAutomotiveSimilar Parts1SMB5916BT3G, 1SMB5918BT3G, 1SMB5920BT3G, 1SMB5921BT3GUsing WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Overview2N7002ET1G by ON Semiconductor has a low Design Risk score of 0.24. To find more datasheet downloads similar to this blog.CatalogProduct OverviewCAD ModelsPackage DimensionsSoldering FootprintGeneric Marking Diagram2N7002ET1G Product Attributes2N7002ET1G ApplicationsAlternate PartsUsing Warnings2N7002ET1G vs 2N7002LT3CAD Models2N7002ET1G Symbol 2N7002ET1G Footprint 2N7002ET1G 3D ModelPackage DimensionsPackage DimensionsSoldering FootprintSoldering FootprintGeneric Marking DiagramGeneric Marking Diagram2N7002ET1G Product AttributesEU RoHS:CompliantECCN (US):EAR99Part Status:ActiveHTS:8541.29.00.95Product Category:Small SignalConfiguration:SingleProcess Technology:TMOSChannel Mode:EnhancementChannel Type:NNumber of Elements per Chip:1Maximum Drain Source Voltage (V):60Maximum Gate Source Voltage (V):±20Maximum Gate Threshold Voltage (V):2.5Operating Junction Temperature (°C):-55 to 150Maximum Continuous Drain Current (A):0.26Maximum Gate Source Leakage Current (nA):100Maximum IDSS (uA):1Maximum Drain Source Resistance (MOhm):2500@10VTypical Gate Charge @ Vgs (nC):0.81@5VTypical Input Capacitance @ Vds (pF):26.7@25VMaximum Power Dissipation (mW):420Typical Fall Time (ns):3.6Typical Rise Time (ns):1.2Typical Turn-Off Delay Time (ns):4.8Typical Turn-On Delay Time (ns):1.7Minimum Operating Temperature (°C):-55Maximum Operating Temperature (°C):150Packaging:Tape and ReelMaximum Positive Gate Source Voltage (V):20Maximum Diode Forward Voltage (V):1.2Pin Count:3Standard Package Name:SOTSupplier Package:SOT-23Mounting:Surface MountPackage Height:0.94Package Length:2.9Package Width:1.3PCB changed:3Lead Shape:Gull-wingHalogen Free:Halogen FreeLead Free:Lead FreeRadiation Hardening:NoREACH SVHC:No SVHC2N7002ET1G ApplicationsIndustrial, Consumer ElectronicsAlternate Parts2N7002E, 2N7002E,215, 2N7002LT3, 2N7002T, 2N7002TC, 2N7002TT1T2, 2N7002E-7, 2N7002-T, 2N7002KQ-13, 2N7002FN3_R1_10001Using WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.2N7002ET1G vs 2N7002LT3Specifications2N7002ET1G2N7002LT3Pbfree Code Yes*Part Life Cycle CodeActiveTransferredIhs ManufacturerON SEMICONDUCTORMOTOROLA INCPart Package CodeSOT-23*Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count3*Manufacturer Package Code318-08*Reach Compliance CodecompliantunknownECCN CodeEAR99EAR99Factory Lead Time11 Weeks, 4 Days*Samacsys DescriptionMOSFET N-Channel 60V 0.26A SOT23 ON Semiconductor 2N7002ET1G N-channel MOSFET Transistor, 0.26 A, 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.26 A*Drain Current-Max (ID)0.26 A0.115 ADrain-source On Resistance-Max2.5 Ω7.5 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORJEDEC-95 CodeTO-236TO-236ABJESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e0Moisture Sensitivity Level1*Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)260*Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W*Qualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin/Lead (Sn/Pb)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)40*Transistor ApplicationSWITCHING*Transistor Element MaterialSILICONSILICONBase Number Matches21HTS Code*8541.21.00.95Feedback Cap-Max (Crss)*5 pFPower Dissipation Ambient-Max*0.2 W

Product OverviewThe 2N7002KT1G is an N-channel Small Signal MOSFET that offers 60V drain-source voltage and 320mA steady-state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC, and PDA applications.CatalogProduct OverviewCAD Models2N7002KT1G FeaturesSoldering FootprintGeneric Marking Diagram2N7002KT1G Product Attributes2N7002KT1G ApplicationsAlternate PartsOther NamesUsing Warnings2N7002KT1G vs 2N7002KT3GCAD Models2N7002KT1G Symbol 2N7002KT1G Footprint2N7002KT1G 3D Model2N7002KT1G FeaturesLow RDS(on)Surface Mount PackageAEC−Q101 Qualified and PPAP CapableESD ProtectedThese Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantPackage DimensionsPackage DimensionsSoldering FootprintSoldering FootprintGeneric Marking DiagramGeneric Marking Diagram2N7002KT1G Product AttributesCase/Package:SOT-23Contact Plating:TinNumber of Pins:3Continuous Drain Current (ID):320 mADrain to Source Breakdown Voltage:60 VDrain to Source Resistance:1.19 ΩDrain to Source Voltage (Vdss):60 VElement Configuration:SingleFall Time:9 nsGate to Source Voltage (Vgs):20 VInput Capacitance:24.5 pFMax Junction Temperature (Tj):150 °CMax Operating Temperature:150 °CMax Power Dissipation:420 mWMin Operating Temperature:-55 °CNominal Vgs:2.3 VNumber of Channels:1Number of Elements:1Packaging:Digi-Reel®Power Dissipation:300 mWRds On Max:1.6 ΩResistance:1.6 ΩRise Time:9 nsSchedule B:8541210080Threshold Voltage:2.3 VTurn-Off Delay Time:55.8 nsTurn-On Delay Time:12.2 nsHeight:1.01 mmLength:3.04 mmWidth:1.4 mmHalogen Free:Halogen FreeLead Free:Lead FreeRadiation Hardening:NoREACH SVHC:No SVHCRoHS:CompliantCountry Of Origin:ChinaECCN:EAR99HTSN:8541290095SCHEDULE B:85412900802N7002KT1G ApplicationsPortable DevicesConsumer ElectronicsPower ManagementIndustrialLevel Shift CircuitsLow Side Load SwitchDC−DC ConverterPortable Applications i.e. DSC, PDA, Cell Phone, etc.Alternate Parts2N7002P, BSS138P, BSS138BK, 2N7002P, 2V7002KT1G, DMN62D0U-13Other Names2N7002KT1G-ND2N7002KT1GOSTR2N7002KT1GOSDKRUsing WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.2N7002KT1G vs 2N7002KT3GSpecifications2N7002KT1G2N7002KT3GPbfree Code Yes YesPart Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORON SEMICONDUCTORPart Package CodeSOT-23SOT-23Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINLEAD FREE, CASE 318-08, TO-236, 3 PINPin Count33Manufacturer Package Code318-08318-08Reach Compliance CodecompliantcompliantECCN CodeEAR99EAR99Factory Lead Time1 Week*Samacsys DescriptionMOSFET N-Ch 60V 380mA Small Signal SOT23 ON Semiconductor 2N7002KT1G N-channel MOSFET Transistor, 380 mA, 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.32 A0.32 ADrain Current-Max (ID)0.32 A0.32 ADrain-source On Resistance-Max1.6 Ω1.6 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF*JEDEC-95 CodeTO-236TO-236ABJESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e3Moisture Sensitivity Level11Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)260260Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W0.3 WQualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin (Sn)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)4040Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches11

Product Overview2N7002WT1G is a N-channel MOSFET Transistor. Download onsemi 2N7002WT1G symbol, SOT-323 footprint, and 3D STEP models here.CatalogProduct OverviewCAD ModelsMechanical Case Outline2N7002WT1G Features2N7002WT1G Product AttributesSimilar PartsOther Names2N7002WT1G vs 2N7002WT3GCAD Models2N7002WT1G Symbol 2N7002WT1G Footprint 2N7002WT1G 3D ModelMechanical Case Outline2N7002WT1G TOP VIEW 2N7002WT1G SIDE VIEW 2N7002WT1G END VIEW2N7002WT1G Features• Low RDS(on)• Small Footprint Surface Mount Package• ESD Protected• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant.2N7002WT1G Product AttributesCase/Package:SOT-323Contact Plating:TinNumber of Pins:3Continuous Drain Current (ID):115 mADrain to Source Breakdown Voltage:60 VDrain to Source Resistance:1.6 ΩDrain to Source Voltage (Vdss):60 VElement Configuration:SingleFall Time:9 nsGate to Source Voltage (Vgs):20 VInput Capacitance:24.5 pFMax Junction Temperature (Tj):150 °CMax Operating Temperature:150 °CMax Power Dissipation:330 mWMin Operating Temperature:-55 °CNominal Vgs:1 VNumber of Channels:1Number of Elements:1Packaging:Tape and ReelPower Dissipation:200 mWRds On Max:1.6 ΩResistance:1.6 ΩRise Time:9 nsSchedule B:8541210080Threshold Voltage:1 VTurn-Off Delay Time:12.5 nsTurn-On Delay Time:5.85 nsHeight:900 µmLength:2.2 mmWidth:1.35 mmHalogen Free:Halogen FreeLead Free:Lead FreeRadiation Hardening:NoREACH SVHC:No SVHCRoHS:CompliantCountry Of Origin:ChinaECCN:EAR99HTSN:8541290095SCHEDULE B:8541290080Similar Parts2N7002WT3G, BSS84PWL6327, BSS138WH6433XTMA1Other Names • 2N7002WT1GOSTR• 2N7002WT1GOSCT• 2N7002WT1GOSDKR• 2N7002WT1G-ND2N7002WT1G vs 2N7002WT3GSpecifications2N7002WT1G2N7002WT3GPbfree CodeYES*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORON SEMICONDUCTORPart Package CodeSC-70SC-70Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70LEAD FREE, CASE 419-04, SC-70Pin Count33Manufacturer Package Code419-04CASE 419-04Reach Compliance CodecompliantunknownECCN CodeEAR99EAR99HTS Code8541.21.00.40*Factory Lead Time7 Weeks*Samacsys DescriptionNULL*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTORSINGLE WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.31 A0.31 ADrain Current-Max (ID)0.31 A0.31 ADrain-source On Resistance-Max1.6 Ω1.6 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORJESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e3Moisture Sensitivity Level1*Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °CPackage Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)260NOT SPECIFIEDPolarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.33 W0.33 WQualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin (Sn)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)40NOT SPECIFIEDTransistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches11Rohs Code*YES

Product OverviewThe 1SMA5913BT3G is a Surface Mount Voltage Regulator Zener Diode with void free transfer-moulded plastic case. All external surfaces are corrosion-resistant and leads are readily solderable. This 1.5W Zener diode is designed for general purpose voltage regulation applications.CatalogProduct OverviewCAD ModelsPackage DimensionsSoldering FootprintGeneric Marking Diagram1SMA5913BT3G FeaturesOther Names (In U.S.A)1SMA5913BT3G Product Attributes1SMA5913BT3G ApplicationsAlternate Parts1SMA5913BT3G vs 1SMA5913BT3CAD Models1SMA5913BT3G Symbol 1SMA5913BT3G Footprint 1SMA5913BT3G 3D ModelPackage DimensionsPackage DimensionsSoldering FootprintSoldering FootprintGeneric Marking DiagramGeneric Marking Diagram1SMA5913BT3G Features• Standard Zener Breakdown Voltage 3.3 V• ESD Rating of Class 3 (>16 kV) per Human Body Model• Flat Handling Surface for Accurate Placement• Package Design for Top Side or Bottom Circuit Board Mounting• Low Profile Package• Available in Tape and Reel• Ideal Replacement for MELF Packages.• Pb-Free Packages are Available• AEC-Q101 Qualified and PPAP Capable• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements.Other Names (In U.S.A)1SMA5913BT3GOSDKR1SMA5913BT3GOSCT1SMA5913BT3GOSTR1SMA5913BT3G Product AttributesSpecificationsValuesCase/PackageSMAMaterialPlasticNumber of Pins2Breakdown Voltage3.47 VElement ConfigurationSingleElement MaterialSiliconForward Voltage1.5 VImpedance10 ΩMax Operating Temperature150 °CMax Power Dissipation1.5 WMax Reverse Leakage Current50 µAMin Operating Temperature-65 °CPackagingCut TapePeak Reverse Current50 µAPower Dissipation500 mWPower Rating1.5 WSchedule B8541100050Test Current113.6 mATolerance5 %Voltage Rating (DC)3.3 VVoltage Tolerance5 %Working Voltage3.3 VZener Current455 mAZener Voltage3.3 VHeight2.05 mmLength4.57 mmWidth2.92 mmHalogen FreeHalogen FreeLead FreeLead FreeRadiation HardeningNoREACH SVHCNo SVHCRoHSCompliant1SMA5913BT3G ApplicationsIndustrialAlternate PartsSML4728A2P, SML4728A2Q, SML4728A-5A1SMA5913BT3, SML4728-5A, SMAJ4728AUsing WarningsPlease check their parameters and pin configuration before replacing them in your circuit.1SMA5913BT3G vs 1SMA5913BT3Specifications1SMA5913BT3G1SMA5913BT3Pbfree CodeYES NOPart Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORON SEMICONDUCTORPackage DescriptionR-PDSO-C2R-PDSO-C2Pin Count22Manufacturer Package Code403D-02403D-02Reach Compliance Codenot_compliantnot_compliantECCN CodeEAR99EAR99HTS Code8541.10.00.508541.10.00.50Factory Lead Time1 Week*Samacsys DescriptionZener Diode 1.5W 3.3V 5% ESD 16KV SMA ON Semiconductor 1SMA5913BT3G Zener Diode, 3.3V 5%, 1.5 W, 50μA, 2-Pin SMA*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLESINGLEDiode Element MaterialSILICONSILICONDiode TypeZENER DIODEZENER DIODEDynamic Impedance-Max10 Ω500 ΩJESD-30 CodeR-PDSO-C2R-PDSO-C2JESD-609 Codee3e0Moisture Sensitivity Level11Number of Elements11Number of Terminals22Operating Temperature-Max150 °C150 °COperating Temperature-Min-65 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)260240PolarityUNIDIRECTIONALUNIDIRECTIONALPower Dissipation-Max0.5 W0.5 WQualification StatusNot QualifiedNot QualifiedReference Voltage-Nom3.3 V3.3 VSurface MountYESYESTechnologyZENERZENERTerminal FinishTin (Sn)Tin/Lead (Sn/Pb)Terminal FormC BENDC BENDTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)1030Voltage Tol-Max5%5%Working Test Current113.6 mA113.6 mABase Number Matches23Rohs Code*NO