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2N7002WT1G Transistor: Application, Feature, Pinout

  • Contents

Product Overview

2N7002WT1G is a N-channel MOSFET Transistor. Download onsemi 2N7002WT1G symbol, SOT-323 footprint, and 3D STEP models here.

Catalog

Product Overview

CAD Models

Mechanical Case Outline

2N7002WT1G Features

2N7002WT1G Product Attributes

Similar Parts

Other Names

2N7002WT1G vs 2N7002WT3G


CAD Models

2N7002WT1G Symbol

2N7002WT1G Symbol

 

2N7002WT1G Footprint

2N7002WT1G Footprint

 

2N7002WT1G 3D Model

2N7002WT1G 3D Model


Mechanical Case Outline

TOP VIEW

2N7002WT1G TOP VIEW

 

2N7002WT1G SIDE VIEW

2N7002WT1G SIDE VIEW

 

2N7002WT1G END VIEW

2N7002WT1G END VIEW


2N7002WT1G Features

• Low RDS(on)
• Small Footprint Surface Mount Package
• ESD Protected
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant.


2N7002WT1G Product Attributes

Case/Package:

SOT-323

Contact Plating:

Tin

Number of Pins:

3

Continuous Drain Current (ID):

115 mA

Drain to Source Breakdown Voltage:

60 V

Drain to Source Resistance:

1.6 Ω

Drain to Source Voltage (Vdss):

60 V

Element Configuration:

Single

Fall Time:

9 ns

Gate to Source Voltage (Vgs):

20 V

Input Capacitance:

24.5 pF

Max Junction Temperature (Tj):

150 °C

Max Operating Temperature:

150 °C

Max Power Dissipation:

330 mW

Min Operating Temperature:

-55 °C

Nominal Vgs:

1 V

Number of Channels:

1

Number of Elements:

1

Packaging:

Tape and Reel

Power Dissipation:

200 mW

Rds On Max:

1.6 Ω

Resistance:

1.6 Ω

Rise Time:

9 ns

Schedule B:

8541210080

Threshold Voltage:

1 V

Turn-Off Delay Time:

12.5 ns

Turn-On Delay Time:

5.85 ns

Height:

900 µm

Length:

2.2 mm

Width:

1.35 mm

Halogen Free:

Halogen Free

Lead Free:

Lead Free

Radiation Hardening:

No

REACH SVHC:

No SVHC

RoHS:

Compliant

Country Of Origin:

China

ECCN:

EAR99

HTSN:

8541290095

SCHEDULE B:

8541290080


Similar Parts

2N7002WT3G, BSS84PWL6327, BSS138WH6433XTMA1


Other Names 

• 2N7002WT1GOSTR
• 2N7002WT1GOSCT
• 2N7002WT1GOSDKR
• 2N7002WT1G-ND


2N7002WT1G vs 2N7002WT3G

Specifications

2N7002WT1G

2N7002WT3G

Pbfree Code

YES

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

ON SEMICONDUCTOR

Part Package Code

SC-70

SC-70

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70

LEAD FREE, CASE 419-04, SC-70

Pin Count

3

3

Manufacturer Package Code

419-04

CASE 419-04

Reach Compliance Code

compliant

unknown

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.40

*

Factory Lead Time

7 Weeks

*

Samacsys Description

NULL

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

SINGLE WITH BUILT-IN DIODE AND RESISTOR

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.31 A

0.31 A

Drain Current-Max (ID)

0.31 A

0.31 A

Drain-source On Resistance-Max

1.6 Ω

1.6 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e3

Moisture Sensitivity Level

1

*

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.33 W

0.33 W

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

Tin (Sn)

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

40

NOT SPECIFIED

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

1

Rohs Code

*

YES

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