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2N7002ET1G Transistor: Pinout, Datasheet, Equivalent

  • Contents

Product Overview

2N7002ET1G by ON Semiconductor has a low Design Risk score of 0.24. To find more datasheet downloads similar to this blog.

Catalog

Product Overview

CAD Models

Package Dimensions

Soldering Footprint

Generic Marking Diagram

2N7002ET1G Product Attributes

2N7002ET1G Applications

Alternate Parts

Using Warnings

2N7002ET1G vs 2N7002LT3


CAD Models

2N7002ET1G Symbol

2N7002ET1G Symbol

 

2N7002ET1G Footprint

2N7002ET1G Footprint

 

2N7002ET1G 3D Model

2N7002ET1G 3D Model


Package Dimensions

Package Dimensions

Package Dimensions


Soldering Footprint

Soldering Footprint

Soldering Footprint


Generic Marking Diagram

Generic Marking Diagram

Generic Marking Diagram


2N7002ET1G Product Attributes

EU RoHS:

Compliant

ECCN (US):

EAR99

Part Status:

Active

HTS:

8541.29.00.95

Product Category:

Small Signal

Configuration:

Single

Process Technology:

TMOS

Channel Mode:

Enhancement

Channel Type:

N

Number of Elements per Chip:

1

Maximum Drain Source Voltage (V):

60

Maximum Gate Source Voltage (V):

±20

Maximum Gate Threshold Voltage (V):

2.5

Operating Junction Temperature (°C):

-55 to 150

Maximum Continuous Drain Current (A):

0.26

Maximum Gate Source Leakage Current (nA):

100

Maximum IDSS (uA):

1

Maximum Drain Source Resistance (MOhm):

2500@10V

Typical Gate Charge @ Vgs (nC):

0.81@5V

Typical Input Capacitance @ Vds (pF):

26.7@25V

Maximum Power Dissipation (mW):

420

Typical Fall Time (ns):

3.6

Typical Rise Time (ns):

1.2

Typical Turn-Off Delay Time (ns):

4.8

Typical Turn-On Delay Time (ns):

1.7

Minimum Operating Temperature (°C):

-55

Maximum Operating Temperature (°C):

150

Packaging:

Tape and Reel

Maximum Positive Gate Source Voltage (V):

20

Maximum Diode Forward Voltage (V):

1.2

Pin Count:

3

Standard Package Name:

SOT

Supplier Package:

SOT-23

Mounting:

Surface Mount

Package Height:

0.94

Package Length:

2.9

Package Width:

1.3

PCB changed:

3

Lead Shape:

Gull-wing

Halogen Free:

Halogen Free

Lead Free:

Lead Free

Radiation Hardening:

No

REACH SVHC:

No SVHC


2N7002ET1G Applications

Industrial, Consumer Electronics


Alternate Parts

2N7002E, 2N7002E,215, 2N7002LT3, 2N7002T, 2N7002TC, 2N7002TT1T2, 2N7002E-7, 2N7002-T, 2N7002KQ-13, 2N7002FN3_R1_10001


Using Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.


2N7002ET1G vs 2N7002LT3

Specifications

2N7002ET1G

2N7002LT3

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Transferred

Ihs Manufacturer

ON SEMICONDUCTOR

MOTOROLA INC

Part Package Code

SOT-23

*

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

*

Manufacturer Package Code

318-08

*

Reach Compliance Code

compliant

unknown

ECCN Code

EAR99

EAR99

Factory Lead Time

11 Weeks, 4 Days

*

Samacsys Description

MOSFET N-Channel 60V 0.26A SOT23 ON Semiconductor 2N7002ET1G N-channel MOSFET Transistor, 0.26 A, 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.26 A

*

Drain Current-Max (ID)

0.26 A

0.115 A

Drain-source On Resistance-Max

2.5 Ω

7.5 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-236

TO-236AB

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e0

Moisture Sensitivity Level

1

*

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

*

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

*

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

Tin/Lead (Sn/Pb)

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

40

*

Transistor Application

SWITCHING

*

Transistor Element Material

SILICON

SILICON

Base Number Matches

2

1

HTS Code

*

8541.21.00.95

Feedback Cap-Max (Crss)

*

5 pF

Power Dissipation Ambient-Max

*

0.2 W

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