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2N7002KT1G Transistor: Pinout, Datasheet, Equivalent

  • Contents

Product Overview

The 2N7002KT1G is an N-channel Small Signal MOSFET that offers 60V drain-source voltage and 320mA steady-state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC, and PDA applications.

Catalog

Product Overview

CAD Models

2N7002KT1G Features

Soldering Footprint

Generic Marking Diagram

2N7002KT1G Product Attributes

2N7002KT1G Applications

Alternate Parts

Other Names

Using Warnings

2N7002KT1G vs 2N7002KT3G


CAD Models

2N7002KT1G Symbol

2N7002KT1G Symbol

 

2N7002KT1G Footprint

2N7002KT1G Footprint

2N7002KT1G 3D Model

2N7002KT1G 3D Model


2N7002KT1G Features

  • Low RDS(on)
  • Surface Mount Package
  • AEC−Q101 Qualified and PPAP Capable
  • ESD Protected
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Package Dimensions

Package Dimensions

Package Dimensions


Soldering Footprint

Soldering Footprint

Soldering Footprint


Generic Marking Diagram

Generic Marking Diagram

Generic Marking Diagram


2N7002KT1G Product Attributes

Case/Package:

SOT-23

Contact Plating:

Tin

Number of Pins:

3

Continuous Drain Current (ID):

320 mA

Drain to Source Breakdown Voltage:

60 V

Drain to Source Resistance:

1.19 Ω

Drain to Source Voltage (Vdss):

60 V

Element Configuration:

Single

Fall Time:

9 ns

Gate to Source Voltage (Vgs):

20 V

Input Capacitance:

24.5 pF

Max Junction Temperature (Tj):

150 °C

Max Operating Temperature:

150 °C

Max Power Dissipation:

420 mW

Min Operating Temperature:

-55 °C

Nominal Vgs:

2.3 V

Number of Channels:

1

Number of Elements:

1

Packaging:

Digi-Reel®

Power Dissipation:

300 mW

Rds On Max:

1.6 Ω

Resistance:

1.6 Ω

Rise Time:

9 ns

Schedule B:

8541210080

Threshold Voltage:

2.3 V

Turn-Off Delay Time:

55.8 ns

Turn-On Delay Time:

12.2 ns

Height:

1.01 mm

Length:

3.04 mm

Width:

1.4 mm

Halogen Free:

Halogen Free

Lead Free:

Lead Free

Radiation Hardening:

No

REACH SVHC:

No SVHC

RoHS:

Compliant

Country Of Origin:

China

ECCN:

EAR99

HTSN:

8541290095

SCHEDULE B:

8541290080


2N7002KT1G Applications

  • Portable Devices
  • Consumer Electronics
  • Power Management
  • Industrial
  • Level Shift Circuits
  • Low Side Load Switch
  • DC−DC Converter
  • Portable Applications i.e. DSC, PDA, Cell Phone, etc.

Alternate Parts

2N7002P, BSS138P, BSS138BK, 2N7002P, 2V7002KT1G, DMN62D0U-13


Other Names

2N7002KT1G-ND

2N7002KT1GOSTR

2N7002KT1GOSDKR


Using Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.


2N7002KT1G vs 2N7002KT3G

Specifications

2N7002KT1G

2N7002KT3G

Pbfree Code

 Yes

 Yes

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

ON SEMICONDUCTOR

Part Package Code

SOT-23

SOT-23

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

LEAD FREE, CASE 318-08, TO-236, 3 PIN

Pin Count

3

3

Manufacturer Package Code

318-08

318-08

Reach Compliance Code

compliant

compliant

ECCN Code

EAR99

EAR99

Factory Lead Time

1 Week

*

Samacsys Description

MOSFET N-Ch 60V 380mA Small Signal SOT23 ON Semiconductor 2N7002KT1G N-channel MOSFET Transistor, 380 mA, 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.32 A

0.32 A

Drain Current-Max (ID)

0.32 A

0.32 A

Drain-source On Resistance-Max

1.6 Ω

1.6 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

*

JEDEC-95 Code

TO-236

TO-236AB

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e3

Moisture Sensitivity Level

1

1

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

260

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

0.3 W

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

Tin (Sn)

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

40

40

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

1

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