The Kynix Components

Product OverviewThe TDA1543 is a monolithic integrated dual 16-bit digital-to-analog converter (DAC) designed as an economy version for use in hi-fi digital audio equipment such as Compact Disc players, digital tape or cassette recorders, digital sound in TV sets and in digital amplifiers. This blog will introduce TDA1543 systematically from its features, pinout to its specifications, applications, also including TDA1543 datasheet and so much more. Video: ESP8266 MP3 Player with I2S DAC TDA1543 CatalogProduct OverviewTDA1543 FeaturesTDA1543 PinoutTDA1543 Pin ConfigurationTDA1543 ApplicationsTDA1543 CAD ModelsTDA1543 Circuit DiagramTDA1543 Block DiagramTDA1543 PackageTDA1543 SpecificationTDA1543 ManufacturerTDA1543 DatasheetUsing WarningsTDA1543 FAQ TDA1543 FeaturesLow distortion16-bit dynamic range4 × oversampling possibleSingle 5 V power supplyNo external components requiredNo requirement for external deglitcher circuitry due to fast settling output currentAdjustable bias currentInternal timing and control circuitsI2S input format: time multiplexed, two's complement, TTL. TDA1543 PinoutThe following figure is the diagram of TDA1543 pinout. TDA1543 Pinout TDA1543 Pin ConfigurationSYMBOLPINDESCRIPTIONBCK1bit clock inputWS2word select inputDATA3data inputGND4groundVdd5+5 V supply voltageAOL6left channel voltage outputVref 7reference voltage outputAOR8right channel output TDA1543 ApplicationsCompact disc playersDigital tape or cassetteRecordersDigital sound in TV setsDigital amplifiers TDA1543 CAD ModelsThe followings are TDA1543 Symbol, Footprint, and 3D Model. TDA1543 Symbol TDA1543 Footprint TDA1543 3D Model TDA1543 Circuit DiagramThe followings are circuits at the input and output pins. TDA1543 Circuit Diagram TDA1543 Block DiagramThe following figure shows the block diagram of TDA1543. TDA1543 Block Diagram TDA1543 PackageThe following diagram shows the TDA1543 package. TDA1543 Package TDA1543 SpecificationManufacturer:Philips SemiconductorsNumber of Bits:16Operating Temperature-Max:85 °COperating Temperature-Min:-30 °CPower Supplies:5 VSubcategory:Other ConvertersSupply Current-Max:60 mASupply Voltage-Nom:5 VTerminal Pitch:2.54 mmTerminal Position:DUALTerminal Form:THROUGH-HOLE TDA1543 ManufacturerPhilips Semiconductors is now NXP Semiconductors. NXP Semiconductors, formerly Philips Semiconductors, has fifty years of innovation and a rich IP portfolio that firmly establishes NXP as Europe's second largest semiconductor company. TDA1543 DatasheetYou can download TDA1543 datasheet from the link given below:TDA1543 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. TDA1543 FAQWhat is digital to analog converter examples?An example of a DAC device is a modem. A modem requires DAC to convert data to analog signals, which can be carried by a telephone wire. Another example of a DAC device is a video adapter. What are the types of digital to analog converter?There are basically four types of Digital to Analog Converter circuits namely: Binary Weighted Resistor D/A Converter Circuit, Binary ladder or R–2R ladder D/A Converter Circuit, Segmented DAC, Delta-Sigma DAC. Why do we use DAC?DACs are commonly used in music players to convert digital data streams into analog audio signals. They are also used in televisions and mobile phones to convert digital video data into analog video signals. These two applications use DACs at opposite ends of the frequency/resolution trade-off. What is difference between ADC and DAC?An ADC takes an analog signal and converts it into a binary one, while a DAC converts a binary signal into an analog value. Why do we need ADC and DAC?Analog to Digital Converter (ADC) and Digital to Analog Converter (DAC) are very important components in electronic equipment. Since most real world signals are analog, these two converting interfaces are necessary to allow digital electronic equipments to process the analog signals.

Catalog FeaturesDescriptionPin ConnectionsOrder CodesAbsolute Maximum RatingsOperating ConditionsElectrical characteristicsTypical Application SchematicsAuxiliary Circuits Package Mechanical DataLM311N DatasheetLM311N FAQ Features■ Maximum input current: 150nA■ Maximum offset current: 20nA■ Differential input voltage range: ±30V■ Power consumption:135mW at ±15V■ Supply voltage: +5V to ±15V■ Output current: 50mA DescriptionThe LM111, LM211, LM311 are voltage comparators that have low input currents.They are also designed to operate over a wide range of supply voltages: from standard ±15V operational amplifier supplies down to the single +5V supply used for IC logic.Their output is compatible with RTL-DTL and TTL as well as MOS circuits and can switch voltages up to +50V at output currents as high as 50mA. Pin Connections Order CodesPart numberTemperature rangePackagePackingMarkingLM211N-40°C, +105°CDIP8TubeLM211NLM211D/DTSO-8Tube or tape & reel211LM311N0°C, +70°CDIP8TubeLM311LM311D/DTSO-8Tube or Tape & reel311 Absolute Maximum RatingsSymbolParameterValueUnitVCCSupply voltage36VVidDifferential input voltage±30VViInput voltage (1)±15VV(1-4)Ground to negative supply voltage30VV(7-4)Output to negative supply voltage LM111-LM211LM311 5040 V Output short-circuit duration10s Voltage at strobe pin+ -5VCCVpdPower dissipation (2)DIP8 SO-8 1250710 mWTjJunction temperature+150°CTstgStorage temperature range-65 to +150°C1.This rating applies for ±15V supplies. The positive input voltage limit is 30V above the negative. The negative input voltage is equal to the negative supply voltage or 30V below the positive supply,whichever is less.2.Pd is calculated with Tamb = +25°C, Tj = +150°C and Rthja = 100°C/W for the DIP8 package, and Rthja = 175°C/W for the SO-8 package. Operating ConditionsSymbolParameterValueUnitVCCSupply voltage5 to ±15V ToperOperating free-air temperature range LM111LM211LM311 -55 to +125-40 to +1050 to +70 °C Electrical characteristicsVcc+ = ±15V, Tamb= +25°C (unless otherwise specified)SymbolParameterConditionsLM111 - LM211LM311UnitMin.Typ.Max.Min.Typ.Max. Vio Input offset voltage (1)RS ≤ 50kL Tamb = +25°CTmin ≤ Tamb ≤ Tmax 0.734 2 7.510mVIioInput offset current (1)Tamb = +25°CTmin ≤ Tamb ≤ Tmax 41020 65070nAIibInput bias current (1)Tamb = +25°CTmin ≤ Tamb ≤ Tmax 60100150 100250300nAAvdLarge signal voltage gain 40200 40200 V/mVIcc+Icc-Supply currentsPositive Negative 5.14.165 5.14.17.55mAVicmInput common mode voltage rangeTmin ≤ Tamb ≤ Tmax-14.5+13.8-14.7+13-14.5+13.8-14.7+13VVOLLow level output voltageTamb = +25°C, IO = 50mA,Vi ≤ -5mV 0.751.5   VTamb = +25°C, IO = 50mA,Vi ≤ -10mV    0.751.5Tmin ≤ Tamb ≤ Tmax VCC+ ≥ +4.5V, VCC- = 0IO = 8mA, Vi ≤-6mV 0.230.4   Tmin ≤ Tamb ≤ Tmax VCC+ ≥ +4.5V, VCC- = 0IO = 8mA, Vi ≤ -10mV     0.23 0.4IOHHigh level output currentTamb = +25°CVi ≥ +5mV, VO = +35V 0.210   nATamb = +25°CVi ≥ +10mV, VO = +35V    0.250nATmin ≤ Tamb ≤ TmaxVi ≥ +5mV, VO = +35V 0.10.5   µAIstrobeStrobe current  3  3 mAtreResponse time (2)  200  200 ns1.The offset voltage, offset current and bias current specifications apply for any supply voltage from a single +5V supply up to ±15V supplies. The offset voltages and offset currents given are the maximum values required to drive the output down to +1V or up to +14V with a 1mA load current. Thus, these parameters define an error band and take into account the worst- case of voltage gain and input impedance.2.The response time specified is for a 100mV input step with 5mV overdrive. Typical Application SchematicsCrystal Oscillator  Low Voltage Adjustable Reference Supply  100KHz Free Running Multivibrator  TTL Interface with High Level Logic Auxiliary CircuitsStrobe  Increasing Input Stage Current  Offset Balancing Package Mechanical DataIn order to meet environmental requirements, STMicroelectronics offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics trademark. ECOPACK specifications are available at: www.st.com. Plastic DIP-8 Mechanical DataDIM.mm.inchMIN.TYPMAX.MIN.TYP.MAX.A 3.3  0.130 a10.7  0.028  B1.39 1.650.055 0.065B10.91 1.040.036 0.041b 0.5  0.020 b10.38 0.50.015 0.020D  9.8  0.386E 8.8  0.346 e 2.54  0.100 e3 7.62  0.300 e4 7.62  0.300 F  7.1  0.280I  4.8  0.189L 3.3  0.130 Z0.44 1.60.017 0.063   SO-8 Mechanical DataDIM.mm.inchMIN.TYPMAX.MIN.TYP.MAX.A1.35 1.750.053 0.069A10.10 0.250.04 0.010A21.10 1.650.043 0.065B0.33 0.510.013 0.020C0.19 0.250.007 0.010D4.80 5.000.189 0.197E3.80 4.000.150 0.157e 1.27  0.050 H5.80 6.200.228 0.244h0.25 0.500.010 0.020L0.40 1.270.016 0.050k8˚ (max.)ddd  0.1  0.04  LM311N DatasheetYou can download the datasheet of LM311N from the link given below:LM311N DatasheetLM311N FAQWhat does a LM311 comparator do?LM311 is a general-purpose integrated comparator with low open-loop gain, large offset voltage, and low common-mode rejection ratio; however, it has a fast response speed, short transmission delay time, and can directly input high-level signals to the microcontroller. What is a voltage comparator used for?A voltage comparator is an electronic circuit that compares two input voltages and lets you know which of the two is greater. It's easy to create a voltage comparator from an op amp, because the polarity of the op-amp's output circuit depends on the polarity of the difference between the two input voltages. What is a voltage comparator device?Voltage comparator is a circuit which compares two voltages and switches the output to either high or low state depending upon which voltage is higher. A voltage comparator based on opamp is shown here. What circuits use comparators?The comparator is an electronic decision making circuit that makes use of an operational amplifiers very high gain in its open-loop state, that is, there is no feedback resistor. Why are op-amps important?Op-amps are still a primary building block for analog systems, performing tasks like amplification, active filtering, and signal transformation. In digital systems, op-amps are used in buffers, analog-to-digital converters, digital-to-analog converters, and regulated power supplies, to name a few applications. 

CatalogFeaturesDescriptionAbsolute Maximum RatingsThermal ResistanceElectrical CharacteristicsSource-Drain Ratings and CharacteristicsTypical Characteristics and GraphsPackage OutlinePart Marking InformationDatasheet PDF DownloadIRFP260 FAQ FeaturesAdvanced ProcessTechnologyDynamic dv/dtRating175°C OperatingTemperatureFastSwitchingFully AvalancheRatedEase ofParallelingSimple DriveRequirementsLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.Absolute Maximum Ratings ParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V50 AID @ TC = 100°CContinuous Drain Current, VGS @ 10V35IDMPulsed Drain Current ➀200PD @TC = 25°CPower Dissipation300W Linear Derating Factor2.0W/°CVGSGate-to-Source Voltage±20VEASSingle Pulse Avalanche Energy560mJIARAvalanche Current➀50AEARRepetitive Avalanche Energy➀30mJdv/dtPeak Diode Recovery dv/dt ➂10V/nsTJTSTGOperating Junction andStorage Temperature Range-55 to +175 °C Soldering Temperature, for 10 seconds300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m) Thermal Resistance ParameterTyp.Max.UnitsRqJCJunction-to-Case–––0.50 °C/WRqCSCase-to-Sink, Flat, Greased Surface0.24–––RqJAJunction-to-Ambient–––40Electrical Characteristics ParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-Source Breakdown Voltage200––––––VVGS = 0V, ID = 250µADV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient–––0.26–––V/°CReference to 25°C, ID = 1mARDS(on)Static Drain-to-Source On-Resistance––––––0.04LVGS = 10V, ID = 28A     VGS(th)Gate Threshold Voltage2.0–––4.0VVDS = VGS, ID = 250µAgfsForward Transconductance27––––––SVDS = 50V, ID = 28A  IDSSDrain-to-Source Leakage Current––––––25µAVDS = 200V, VGS = 0V––––––250VDS = 160V, VGS = 0V, TJ = 150°CIGSSGate-to-Source Forward Leakage––––––100nAVGS = 20VGate-to-Source Reverse Leakage––––––-100VGS = -20VQgTotal Gate Charge––––––234 nCID = 28A VDS = 160VVGS = 10V  QgsGate-to-Source Charge––––––38QgdGate-to-Drain ("Miller") Charge––––––110td(on)Turn-On Delay Time–––17––– nsVDD = 100V ID = 28A RG = 1.8LVGS = 10V     trRise Time–––60–––td(off)Turn-Off Delay Time–––55–––tfFall Time–––48–––LDInternal Drain Inductance–––5.0––– nHBetween lead, D6mm (0.25in.)from package Gand center of die contact SLSInternal Source Inductance–––13–––CissInput Capacitance–––4057––– pFVGS = 0V VDS = 25Vƒ = 1.0MHzCossOutput Capacitance–––603–––CrssReverse Transfer Capacitance–––161–––Source-Drain Ratings and Characteristics ParameterMin.Typ.Max.UnitsConditionsISContinuous Source Current(Body Diode)––––––50 AMOSFET symbol Dshowing theintegral reverse Gp-n junction diode. SISMPulsed Source Current(Body Diode)➀––––––200VSDDiode Forward Voltage––––––1.3VTJ = 25°C, IS = 28A, VGS = 0V  trrReverse Recovery Time–––268402nsTJ = 25°C, IF = 28Adi/dt = 100A/µs  QrrReverse Recovery Charge–––1.92.8mCtonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical Characteristics and Graphs     Package OutlinePart Marking InformationDatasheet PDF DownloadYou can download the datasheet of IRFP260 from the link given below.IRFP260-DatasheetIRFP260 FAQWhat is power MOSFET and its types?Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.Why power MOSFET is vertical?The vertical orientation eliminates crowding at the gate and offers larger channel widths. In addition, thousands of these transistor "cells" are combined into one in order to handle the high currents and voltage required of such devices.What is the construction of power MOSFET?A power MOSFET actually consists of a parallel connection of thousands of basic MOSFET cells on the same single chip of silicon. When gate circuit voltage is zero, and VDD is present , n−−p− junctions are reverse biased and no current flows from drain to source. 

1N53 Series OverviewON Semiconductor 1N53 series is Surmetic™ 40 axial-leaded 5Watt Zener Diode. This axial lead device features a molded package which is void-free transfer−molded, thermosetting plastic, offers protection in most common environmental conditions, The voltage regulator has tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The external surfaces are corrosion resistant and leads are readily solderable.Catalog1N53 Series OverviewProduct DescriptionCAD ModelsMarking DiagramPackage Dimensions1N5347BG FeaturesMechanical CharacteristicsOther NamesProduct Attributes1N5347BG ApplicationsAlternate PartsUsing Warnings1N5347BG vs 1N5347BRLProduct Description1N5347BG is a Discrete Voltage Regulator in its reverse breakdown region. It is a 2-pin 10V 5W Zener diode with tight limits and better-operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all common environmental conditions. The cathode is indicated by color band polarity. When operated in Zener mode, the cathode will be positive with respect to the anode. All external surfaces are corrosion-resistant and leads are readily solderable finish.CAD Models1N5347BG Symbol 1N5347BG Footprint 1N5347BG 3D ModelMarking DiagramMarking DiagramPackage DimensionsPackage Dimensions1N5347BG Features• Zener Voltage 10 V• Surge Rating of up to 180 W @ 8.3 ms• ESD Rating of Class 3 (>16 kV) per Human Body Model• Maximum Limits Guaranteed on up to Six Electrical Parameters• Pb-Free Packages are AvailableMechanical Characteristics• Case: Void free, transfer−molded, thermosetting plastic• Finish: All external surfaces are corrosion resistant and leads are readily solderable.• Maximum Lead Temperature for Soldering Purposes: 260°C, 1/16 in. from the case for 10 seconds• Polarity: Cathode indicated by polarity band• Mounting Position: AnyOther Names 1N5347BG-ND1N5347BGOSProduct AttributesEU RoHS:Compliant with ExemptionECCN (US):EAR99Part Status:ActiveHTS:8541.10.00.50SVHC:YESSVHC Exceeds Threshold:YESType:Voltage RegulatorConfiguration:SingleNominal Zener Voltage (V):10Zener Voltage Tolerance:5%Maximum Voltage Regulation (mV):220Maximum Forward Voltage (V):1.2Maximum Power Dissipation (mW):5000Test Current (mA):125Maximum Reverse Leakage Current (uA):5Maximum Regulator Current (mA):475Maximum Zener Impedance (Ohm):2Maximum Power Dissipation:@ 25C (mW) 5000Minimum Operating Temperature (°C):-65Maximum Operating Temperature (°C):200Maximum Zener Voltage (V):10.5Minimum Zener Voltage (V):9.5Packaging:BoxSupplier Package Case:017AA-01Pin Count:2Diameter:3.68(Max)Mounting:Through HolePackage Length:8.89(Max)PCB changed:2Lead Shape:Through HoleECCN:EAR99HTSN:8541100050SCHEDULE B:85411000501N5347BG ApplicationsIndustrial, Automation & Process Control, SafetyAlternate Parts1N5347BRLG, 1N5347B-T, 1N5347BRL, 1N5347BTR1N5347BAMP, 1N5347BBK, 1N5347B-TPUsing WarningsPlease check their parameters and pin configuration before replacing them in your circuit.1N5347BG vs 1N5347BRLSpecifications1N5347BG1N5347BRLPbfree Code YES*Part Life Cycle CodeActiveTransferredIhs ManufacturerON SEMICONDUCTORMOTOROLA INCPackage DescriptionO-PALF-W2O-PALF-W2Pin Count02Manufacturer Package Code017AACASE 17-02Reach Compliance Codenot_compliantunknownECCN CodeEAR99EAR99HTS Code8541.10.00.508541.10.00.50Factory Lead Time1 Week*Samacsys DescriptionZener Diode, 10V 5% 5 W Through Hole 2-pin DO-15*Samacsys ManufacturerON Semiconductor*Case ConnectionISOLATEDISOLATEDConfigurationSINGLESINGLEDiode Element MaterialSILICONSILICONDiode TypeZENER DIODEZENER DIODEDynamic Impedance-Max2 Ω2 ΩJESD-30 CodeO-PALF-W2O-PALF-W2JESD-609 Codee3e0Number of Elements11Number of Terminals22Operating Temperature-Max200 °C200 °COperating Temperature-Min-65 °C-65 °CPackage Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeROUNDROUNDPackage StyleLONG FORMLONG FORMPeak Reflow Temperature (Cel)260*PolarityUNIDIRECTIONALUNIDIRECTIONALPower Dissipation-Max5 W5 WQualification StatusNot QualifiedNot QualifiedReference Voltage-Nom10 V10 VSurface MountNONOTechnologyZENERZENERTerminal FinishTin (Sn)Tin/Lead (Sn/Pb)Terminal FormWIREWIRETerminal PositionAXIALAXIALTime@Peak Reflow Temperature-Max (s)40*Voltage Tol-Max5%5%Working Test Current125 mA125 mABase Number Matches11Knee Impedance-Max*125 ΩReverse Current-Max*5 µAFAQWhat is 1N5347BG?2-pin 10V 5W Zener Voltage Regulator What is the Operating Temperature of 1N5347BG?-65 °C to +200 °C What is the Maximum Zener Impedance of 1N5347BG?2Ω What is the Maximum Power Dissipation of 1N5347BG?5000 mW

Product OverviewThe 2N7002KT1G is an N-channel Small Signal MOSFET that offers 60V drain-source voltage and 320mA steady-state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC, and PDA applications.CatalogProduct OverviewCAD Models2N7002KT1G FeaturesSoldering FootprintGeneric Marking Diagram2N7002KT1G Product Attributes2N7002KT1G ApplicationsAlternate PartsOther NamesUsing Warnings2N7002KT1G vs 2N7002KT3GCAD Models2N7002KT1G Symbol 2N7002KT1G Footprint2N7002KT1G 3D Model2N7002KT1G FeaturesLow RDS(on)Surface Mount PackageAEC−Q101 Qualified and PPAP CapableESD ProtectedThese Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantPackage DimensionsPackage DimensionsSoldering FootprintSoldering FootprintGeneric Marking DiagramGeneric Marking Diagram2N7002KT1G Product AttributesCase/Package:SOT-23Contact Plating:TinNumber of Pins:3Continuous Drain Current (ID):320 mADrain to Source Breakdown Voltage:60 VDrain to Source Resistance:1.19 ΩDrain to Source Voltage (Vdss):60 VElement Configuration:SingleFall Time:9 nsGate to Source Voltage (Vgs):20 VInput Capacitance:24.5 pFMax Junction Temperature (Tj):150 °CMax Operating Temperature:150 °CMax Power Dissipation:420 mWMin Operating Temperature:-55 °CNominal Vgs:2.3 VNumber of Channels:1Number of Elements:1Packaging:Digi-Reel®Power Dissipation:300 mWRds On Max:1.6 ΩResistance:1.6 ΩRise Time:9 nsSchedule B:8541210080Threshold Voltage:2.3 VTurn-Off Delay Time:55.8 nsTurn-On Delay Time:12.2 nsHeight:1.01 mmLength:3.04 mmWidth:1.4 mmHalogen Free:Halogen FreeLead Free:Lead FreeRadiation Hardening:NoREACH SVHC:No SVHCRoHS:CompliantCountry Of Origin:ChinaECCN:EAR99HTSN:8541290095SCHEDULE B:85412900802N7002KT1G ApplicationsPortable DevicesConsumer ElectronicsPower ManagementIndustrialLevel Shift CircuitsLow Side Load SwitchDC−DC ConverterPortable Applications i.e. DSC, PDA, Cell Phone, etc.Alternate Parts2N7002P, BSS138P, BSS138BK, 2N7002P, 2V7002KT1G, DMN62D0U-13Other Names2N7002KT1G-ND2N7002KT1GOSTR2N7002KT1GOSDKRUsing WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.2N7002KT1G vs 2N7002KT3GSpecifications2N7002KT1G2N7002KT3GPbfree Code Yes YesPart Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORON SEMICONDUCTORPart Package CodeSOT-23SOT-23Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINLEAD FREE, CASE 318-08, TO-236, 3 PINPin Count33Manufacturer Package Code318-08318-08Reach Compliance CodecompliantcompliantECCN CodeEAR99EAR99Factory Lead Time1 Week*Samacsys DescriptionMOSFET N-Ch 60V 380mA Small Signal SOT23 ON Semiconductor 2N7002KT1G N-channel MOSFET Transistor, 380 mA, 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.32 A0.32 ADrain Current-Max (ID)0.32 A0.32 ADrain-source On Resistance-Max1.6 Ω1.6 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF*JEDEC-95 CodeTO-236TO-236ABJESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e3Moisture Sensitivity Level11Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)260260Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W0.3 WQualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin (Sn)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)4040Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches11

Product OverviewThe TIP36C is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturation voltage. Designed for use in audio amplifier and general purpose applications. This blog will introduce TIP36C systematically from its features, pinout to its specifications, applications, also including TIP36C datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionTIP36C FeaturesTIP36C PinoutTIP36C ApplicationsTIP36C CAD ModelsTIP36C Circuit DiagramInternal schematic diagramsTIP36C PackageTIP36C SpecificationTIP36C ManufacturerTIP36C DatasheetUsing WarningsTIP36C FAQ Related Video Introduction Video: tip35c tip36c amplificator audio 2x200w TIP36C Features■ Low collector-emitter saturation voltage■ Complementary NPN - PNP transistors TIP36C PinoutThe following figure is the diagram of TIP36C pinout. TIP36C Pinout TIP36C Applications■ General purpose■ Audio amplifier TIP36C CAD ModelsThe followings are TIP36C Symbol, Footprint, and 3D Model.  TIP36C Symbol TIP36C Footprint TIP36C 3D Model TIP36C Circuit DiagramThe following is the circuit diagram of TIP36C. Test Circuit Inductive Load Switching Switching Time Equivalent Test Circuits Internal schematic diagramsThe following diagram shows the internal schematic diagrams. Internal schematic diagrams TIP36C PackageThe following diagram shows the TIP36C package. TIP36C Package TIP36C SpecificationProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:Bipolar Transistors - BJTMounting Style:Through HolePackage / Case:TO-247-3Transistor Polarity:PNPConfiguration:SingleCollector- Emitter Voltage VCEO Max:100 VCollector- Base Voltage VCBO:100 VEmitter- Base Voltage VEBO:- 5 VCollector-Emitter Saturation Voltage:1.8 VMaximum DC Collector Current:25 APd - Power Dissipation:125 WGain Bandwidth Product fT:3 MHzMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CSeries:TIP36CContinuous Collector Current:25 AHeight:20.15 mmLength:15.75 mmSubcategory:TransistorsTechnology:SiWidth:5.15 mmUnit Weight:0.229281 oz TIP36C ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. TIP36C DatasheetYou can download TIP36C datasheet from the link given below:TIP36C Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. TIP36C FAQWhat does a bipolar transistor do?A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power. What is called bipolar transistor?Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). Whereas a field-effect transistor is a unipolar device, a bipolar transistor is so named because its operation involves two kinds of charge carriers, holes and electrons. What is the function of BJT?The main basic function of a BJT is to amplify current it will allow BJTs are used as amplifiers or switches to produce wide applicability in electronic equipment include mobile phones, industrial control, television, and radio transmitters. There are two different types of BJTs are available, they are NPN and PNP.