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IRFP260 Power MOSFET Datasheet PDF Download [FAQ]

  • Contents

Catalog

Features

Description

Absolute Maximum Ratings

Thermal Resistance

Electrical Characteristics

Source-Drain Ratings and Characteristics

Typical Characteristics and Graphs

Package Outline

Part Marking Information

Datasheet PDF Download

IRFP260 FAQ

 

Features

  • Advanced ProcessTechnology
  • Dynamic dv/dtRating
  • 175°C OperatingTemperature
  • FastSwitching
  • Fully AvalancheRated
  • Ease ofParalleling
  • Simple DriveRequirements
  • Lead-Free


Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.


Absolute Maximum Ratings

 

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

50

 

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

35

IDM

Pulsed Drain Current ➀

200

PD @TC = 25°C

Power Dissipation

300

W

 

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

560

mJ

IAR

Avalanche Current➀

50

A

EAR

Repetitive Avalanche Energy➀

30

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

10

V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to +175

 

°C

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

 

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

 


Thermal Resistance

 

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

0.50

 

°C/W

RqCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

RqJA

Junction-to-Ambient

–––

40


Electrical Characteristics

 

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

200

–––

–––

V

VGS = 0V, ID = 250µA

DV(BR)DSS/DTJ

Breakdown Voltage Temp. Coefficient

–––

0.26

–––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

–––

0.04

L

VGS = 10V, ID = 28A     

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

27

–––

–––

S

VDS = 50V, ID = 28A  

IDSS

Drain-to-Source Leakage Current

–––

–––

25

µA

VDS = 200V, VGS = 0V

–––

–––

250

VDS = 160V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

VGS = -20V

Qg

Total Gate Charge

–––

–––

234

 

nC

ID = 28A VDS = 160V

VGS = 10V  

Qgs

Gate-to-Source Charge

–––

–––

38

Qgd

Gate-to-Drain ("Miller") Charge

–––

–––

110

td(on)

Turn-On Delay Time

–––

17

–––

 

ns

VDD = 100V ID = 28A RG = 1.8L

VGS = 10V     

tr

Rise Time

–––

60

–––

td(off)

Turn-Off Delay Time

–––

55

–––

tf

Fall Time

–––

48

–––

LD

Internal Drain Inductance

–––

5.0

–––

 

nH

Between lead, D

6mm (0.25in.)

from package G

and center of die contact S

LS

Internal Source Inductance

–––

13

–––

Ciss

Input Capacitance

–––

4057

–––

 

pF

VGS = 0V VDS = 25V

ƒ = 1.0MHz

Coss

Output Capacitance

–––

603

–––

Crss

Reverse Transfer Capacitance

–––

161

–––


Source-Drain Ratings and Characteristics

 

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

–––

–––

50

 

A

MOSFET symbol D

showing the

integral reverse G

p-n junction diode. S

ISM

Pulsed Source Current

(Body Diode)➀

–––

–––

200

VSD

Diode Forward Voltage

–––

–––

1.3

V

TJ = 25°C, IS = 28A, VGS = 0V  

trr

Reverse Recovery Time

–––

268

402

ns

TJ = 25°C, IF = 28A

di/dt = 100A/µs  

Qrr

Reverse Recovery Charge

–––

1.9

2.8

mC

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 

Typical Characteristics and Graphs

Typical-Characteristics-01

 

Typical-Characteristics-02

 

Typical-Characteristics-03

 

Typical-Characteristics-04

 

Typical-Characteristics-05

 

Package Outline

Figure-IRFP260-Package-Outline


Part Marking Information

Figure-IRFP260-Part-Marking-Information


Datasheet PDF Download

You can download the datasheet of IRFP260 from the link given below.

IRFP260-Datasheet


IRFP260 FAQ

What is power MOSFET and its types?

Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.


Why power MOSFET is vertical?

The vertical orientation eliminates crowding at the gate and offers larger channel widths. In addition, thousands of these transistor "cells" are combined into one in order to handle the high currents and voltage required of such devices.


What is the construction of power MOSFET?

A power MOSFET actually consists of a parallel connection of thousands of basic MOSFET cells on the same single chip of silicon. When gate circuit voltage is zero, and VDD is present , n−−p− junctions are reverse biased and no current flows from drain to source.

 

IRFP260NPBF Documents & Media

Download datasheets and manufacturer documentation for Infineon Technologies IRFP260NPBF.

IRFP260NPBF PCB Symbol, Footprint & 3D Model

Infineon Technologies IRFP260NPBF

Infineon Technologies

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs /-20V

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Lydia

Lydia is a highly experienced technical writer with over 8 years of specialized knowledge in the semiconductor electronics industry. She possesses deep industry insights and a visionary creative approach, enabling her to translate complex technical concepts into easily digestible content.

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