The Kynix Components

CatalogFeaturesMarking DiagramAbsolute Maximum RatingsThermal CharacteristicsElectrical CharacteristicsOrdering InformationTypical Performance CharacteristicsMechanical Case OutlineFSV20150V DatasheetFSV20150V ManufacturerFSV20150V FAQFeaturesUltra−Low Forward Voltage DropLow Thermal ResistanceVery Low Profile: Typical Height of 1.1 mmTrench Schottky TechnologyGreen Molding Compound as per IEC61249 StandardNon−DAP Option OnlyThese Devices are Pb−Free, Halogen Free and areRoHS Compliant Marking Diagram$Y = ON Semiconductor Logo&Z = Assembly Plant Code&3 = Date Code (Year & Week)FSV20150V = Specific Device Code Absolute Maximum Ratings (TA = 25℃ unless otherwise noted)SymbolParameterValueUnitVRRMPeak Repetitive Reverse Voltage150VVRWMWorking Peak Reverse Voltage150VVRMSRMS Reverse Voltage106VVRDC Blocking Voltage150VIF(AV)Average Rectified Peak Forward Surge Current20AIFSMNon−Repetitive Peak Forward Surge Current270ATJOperating Junction Temperature Range−55 to +150°CTSTGStorage Temperature Range−55 to +150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Characteristics(TA = 25℃ unless otherwise noted)SymbolParameterMinimum Land PatternMaximum Land PatternUnitRθJAJunction−to−Ambient Thermal Resistance10040℃/WΨJLJunction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode1512℃/WJunction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode65 The thermal resistances (RθJA & ΨJL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. Figure 1. Minimum Land Pattern of 2 oz Copper   Figure 2. Maximum Land Pattern of 2 oz Copper Electrical Characteristics (TA = 25℃ unless otherwise noted)SymbolParameterConditionsMinMaxUnitBVRBreakdown VoltageIR = 0.5 mA150−VVFForward Voltage DropIF = 20 A−0.84VIRReverse CurrentVR = 150 V−30µA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Ordering InformationPart NumberTop MarkPackageShipping†FSV20150VFSV20150VTO−277 3L                        (Pb−Free/Halogen Free)5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Typical Performance CharacteristicsFigure 3. Typical Forward Characteristics  Figure 4. Typical Reverse Characteristics  Figure 5. Typical Junction Capacitance  Figure 6. Forward Current Derating Curve Mechanical Case Outline FSV20150V DatasheetFSV20150V Datasheet FSV20150V ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. FSV20150V FAQWhat are FSV Ultra-Low VF Schottky Rectifiers?onsemi / Fairchild FSV Ultra-Low VF Schottky Rectifiers are ultra-low forward voltage drop rectifiers with low thermal resistance. They feature a low profile with a typical height of 1.1mm and are RoHS compliant. The onsemi / Fairchild FSV Rectifiers are Green Molding Compounds as per the IEC61249 Standard, lead-free in compliance with EU RoHS 2011/65/EU Directive, and qualified per AEC-Q101 Rev. C Standard. What is a Schottky rectifier used for?Schottky diodes are used for their low turn-on voltage, fast recovery time and low-loss energy at higher frequencies. These characteristics make Schottky diodes capable of rectifying a current by facilitating a quick transition from conducting to blocking state. Which metal is used in Schottky diode?A metal-semiconductor junction is formed between a metal and a semiconductor, creating a Schottky barrier instead of a semiconductor-semiconductor junction as in conventional diodes. The semiconductor would typically be N-type silicon and typical metals used are molybdenum, platinum, chromium or tungsten. 

CatalogFeaturesProduct SummaryOrdering InformationAbsolute Maximum RatingsThermal Resistance RatingsSpecificationsTypical CharacteristicsThermal RatingsPackage Information SQD40P10-40L_GE3 DatasheetSQD40P10-40L_GE3 ManufacturerSQD40P10-40L_GE3 FAQ FeaturesHalogen-free According to IEC  61249-2-21 DefinitionTrenchFET® Power MOSFETPackage with Low Thermal ResistanceAEC-Q101 Qualifiedd100 % Rg and UIS TestedCompliant to RoHS Directive  2002/95/EC Product SummaryVDS (V)-100RDS(on) (Ω) at VGS = - 10 V0.04RDS(on) (Ω) at VGS = - 4.5 V0.048ID (A)-38ConfigurationSingle Ordering InformationPackageTO-252Lead (Pb)-free and Halogen-freeSQD40P10-40L-GE3 Absolute Maximum Ratings (TC = 25 °C, unless otherwise noted)PARAMETERSYMBOLLIMITUNITDrain-Source VoltageVDS-100VGate-Source VoltageVGS± 20Continuous Drain CurrentTC = 25 °CID-38ATC = 125 °C-22Continuous Source Current (Diode Conduction)aIS-50Pulsed Drain CurrentbIDM-150Single Pulse Avalanche CurrentL = 0.1 mHIAS-44Single Pulse Avalanche EnergyEAS96mJMaximum Power DissipationbTC = 25 °CPD136WTC = 125 °C45Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 175°C Thermal Resistance RatingsPARAMETERSYMBOLLIMITUNITJunction-to-AmbientPCB MountcRthJA50°C/WJunction-to-Case (Drain)RthJC1.1 Notesa.Package limited.b.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.c.When mounted on 1" square PCB (FR-4 material).d.Parametric verification ongoing. Specifications (TC = 25 °C, unless otherwise noted)PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNITStaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 μA-100--VGate-Source Threshold VoltageVGS(th)VDS = VGS, ID = - 250 μA-1-2-2.5Gate-Source LeakageIGSSVDS = 0 V, VGS = ± 20 V--± 100nAZero Gate Voltage Drain CurrentIDSSVGS = 0 VVDS = - 100 V---1μAVGS = 0 VVDS = - 100 V, TJ = 125 °C---50VGS = 0 VVDS = - 100 V, TJ = 175 °C---250On-State Drain CurrentaID(on)VGS = - 10 VVDS ≤ - 5 V-30--ADrain-Source On-State ResistanceaRDS(on)VGS = - 10 VID = - 9.2 A-0.0330.04ΩVGS = - 10 VID = - 9.2 A, TJ = 125 °C--0.074VGS = - 10 VID = - 9.2 A, TJ = 175 °C--0.093VGS = - 4.5 VID = - 7.7 A-0.0370.048Forward TransconductancebgfsVDS = - 15 V, ID = - 9.2 A-35-SDynamicbInput CapacitanceCissVGS = 0 VVDS = - 25 V, f = 1 MHz-44335545pFOutput CapacitanceCoss-301380Reverse Transfer CapacitanceCrss-208260Total Gate ChargecQgVGS = - 10 VVDS = - 50V, ID = - 9.2 A-96144nCGate-Source ChargecQgs-8.4-Gate-Drain ChargecQgd-23.5-Gate ResistanceRgf = 1 MHz1.53.134.7ΩTurn-On Delay Timectd(on)VDD = - 50 V, RL = 6.49 ΩID ≌ - 7.7 A, VGEN = - 10 V, Rg = 1.0 Ω-1117nsRise Timectr-1117Turn-Off Delay Timectd(off)-78117Fall Timectf-1523Source-Drain Diode Ratings and CharacteristicsbPulsed CurrentaISM ---150AForward VoltageVSDIF = - 7.7 A, VGS = 0 V--0.8-1.5V Notesa.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.b.Guaranteed by design, not subject to production testing.c.Independent of operating temperature. Typical Characteristics (TA = 25 °C, unless otherwise noted)Figure: Output Characteristics  Figure: Transfer Characteristics   Figure: Transconductance   Figure: On-Resistance vs. Drain Current   Figure: Capacitance   Figure: Gate Charge   Figure: On-Resistance vs. Junction Temperature   Figure: Source Drain Diode Forward Voltage   Figure: On-Resistance vs. Gate-to-Source Voltage   Figure: Threshold Voltage   Figure: Drain Source Breakdown vs. Junction Temperature Thermal Ratings (TA = 25 °C, unless otherwise noted) Figure: Safe Operating Area Package Information Figure: TO-252AA Case Outline MILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A2.182.380.0860.094A1-0.127-0.005b0.640.880.0250.035b20.761.140.030.045b34.955.460.1950.215C0.460.610.0180.024C20.460.890.0180.035D5.976.220.2350.245D14.1-0.161-E6.356.730.250.265E14.32-0.17-H9.410.410.370.41e2.28 BSC0.090 BSCe14.56 BSC0.180 BSCL1.41.780.0550.07L30.891.270.0350.05L4-1.02-0.04L51.011.520.040.06 SQD40P10-40L_GE3 DatasheetYou can download the datasheet from the link given below:SQD40P10-40L_GE3 Datasheet SQD40P10-40L_GE3 ManufacturerVishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors. Vishay Intertechnology revenues for 2018 were $3.035 billion. As of December 31, 2018, Vishay Intertechnology had approximately 24,100 full-time employees. SQD40P10-40L_GE3 FAQWhat is P-channel Mosfet used for?P-channel MOSFETs are often used for load switching. The simplicity of P-channel solutions on the high side makes them equally attractive for applications such as Low-Voltage Drives and non-isolated Point of Loads in systems where space is at a premium. Which Mosfet is faster N-channel or P-channel?The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. Where are MOSFETs used?Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications. 

Product Overview 2N3819 is a general-purpose N-channel Junction Field Effect Transistor. It operates in depletion-mode and requires reverse biasing to turn off. It is designed for medium to high range frequencies. Furthermore, it has a high gain for wideband frequencies and has an importance in VHF/UHF based systems. It is a small-signal device capable of fast switching, signal amplification, and mixing in low noise applications.   This blog will introduce 2N3819 systematically from its features, pinout to its specifications, applications, also including 2N3819 datasheet and so much more.   Catalog Product Overview 2N3819 Features 2N3819 Pinout 2N3819 Pin Configuration 2N3819 Applications 2N3819 Equivalents 2N3819 CAD Models 2N3819 Interfacing Diagram Where to use 2N3819? 2N3819 Circuit Diagram 2N3819 Package 2N3819 Specification 2N3819 Manufacturer 2N3819 Datasheet Using Warnings 2N3819 FAQ   2N3819 Features Type: JFET - N - Channel - DepletionDrain to Source Voltage (VDS) = 25VDrain to Gate Voltage (VDG) = 25VGate to Source Voltage (VGS) = 25VDrain Current (ID)= 0.1 AGate-Source Cut-off Voltage (VGS(off)) = -8.0 Vdc (VDS = 15 Vdc, ID = 10 nAdc)Cut-off Frequency (Note 1) = 700 Mhz (VDS = 15 Vdc, VGS = 0)   2N3819 Pinout The following figure is the diagram of 2N3819 pinout.   2N3819 Pinout   2N3819 Pin Configuration NumberPin NameFunction1SourceSource pin2GateGate pin3DrainDrain pin   2N3819 Applications Low noise applications Modulation of signalsWideband amplifying systemsVHF/UHF mixersHigh-Speed Switching SystemsRF reception and transmission   2N3819 Equivalents 2N44162SK1622N5638NTE312   2N3819 CAD Models The followings are 2N3819 Symbol, Footprint.   2N3819 Symbol   2N3819 Footprint   2N3819 Interfacing Diagram The below image is showing the standard application of the N-Channel JFET 2N3819 as an amplifier.   The C1 is the coupling capacitor and the C2 is the DC blocking capacitor where the output will be harvested. The RC is the collector Resistor and changing this value will change the frequency response of the circuit as well as it will control the DC gain by controlling the collector current. R1 and R2 are used as a voltage divider for biasing the JFET.   A typical value for 12V operation could be: R1 = 100k, R2 = 10k, RC= 10k, and C1, C2 can be 1uF ceramic capacitors.   2N3819 Interfacing Diagram   Where to use 2N3819? This N-channel JFET can be used for low side switching only. Because N-channel JFETs are used to drive low-side power paths only. But if you want to drive a high-side load, you can use any other P-channel JFET. Another important point here to note here is that the drain current of 2N3819 JFET is 100mA. Hence, it will be used for an application that only requires less than 100mA Drain current.   2N3819 Circuit Diagram The following circuit shows the example of 2N3819 JFET as a switch. A DC voltmeter is connected between Drain and sourcr terminal to measure voltage across Drain terminal.   When zero voltage is applied to the Gate terminal of N-channel JFET, FET  operates in saturation mode and It acts like a closed circuit and almost zero voltage appears across the Drain terminal as you can see on the DC voltmeter  . Similarly, when enough negative voltage is applied to Gate terminal of N-channel JFET, FET operates in the cut-off region and It acts as an open circuit and input voltage source (+25V) appears across Drain terminal as you can see on the DC voltmeter.    N-Channel JFET as a Switch   The circuitry for an AC  field detector is shown above:   AC field detector Circuit Diagram   It will explain the working of 2N3819 N-Channel JFET as a field detector. The transistor source terminal is connected with 6-12 Volts of power source to supply voltage to 555 Timer IC. The IC  is further connected with an LED, which brightens when the timer turns on, and a buzzer that produces sound whenever a signal is detected. An antenna is connected to the gate of 2N3819 to detect the  AC field. Whenever the antenna senses a charge or a wave, it will induce a voltage and pass it to the gate terminal. The change in the gate voltage alters ID and activates the TimerIC,  As a result, the led starts to blink, showing the activation of the IC.  and the buzzer produces the sound to indicate that a charge is detected by the antenna.   2N3819 Package The following diagram shows the 2N3819 package.   2N3819 Package   2N3819 Specification SpecificationValuePackageTO-92-3Transistor PolarityNMaximum Gate Source Voltage-25 VZero-Gate Voltage Drain Current20 mAMaximum Drain Gate Voltage25 VMountingThrough HolePackagingBoxTransistor TypeJFETNo. of Pins3 Pin   2N3819 Manufacturer For over 40 years, NTE Electronics, Inc.  has been a leading supplier of high-quality NTE and ECG brand name electrical and electronic components. Product lines include semiconductors, relays, resistors, capacitors, cable ties and bundle management products, LED lighting, optoelectronics, potentiometers and trimmers, RF connectors, heat shrink, soldering irons, soldering stations, and heat guns, solder wick, AC/DC adapters, clips and test leads, terminals and connectors, fuses, fans, tools and hardware, wire and cable, and more.   2N3819 Datasheet You can download 2N3819 datasheet from the link given below: 2N3819 Datasheet   Using Warnings Note: Please check their parameters and pin configuration before replacing them in your circuit.   2N3819 FAQ What is the working principle of N channel JFET? An n-type channel is formed between two p-type layers which are connected to the gate. Majority carrier electrons flow from the source and exit the drain, forming the drain current.   What is the difference between N channel and P-channel JFET? There are two types of JFET: n-channel and p-channel. Due to the fact that electrons move faster than holes, n-channel JFETs are more common than p-channel JFETs. The conduction level in a bipolar junction transistor (BJT) depends on two charge carriers – electrons and holes.   Which is the majority charge carrier in n-channel JFET? Electrons are the majority charge carrier in N-channel JFET. The channel formed is in between source and drain which are made of p-type semiconductor material.   What is the direction of current flow in N-channel JFET? When a voltage greater than pinch off is applied, the current starts flowing from Drain to source.   What does N channel mean? An N-Channel MOSFET is made up of an N channel, which is a channel composed of a majority of electron current carriers. The gate terminals are made up of P material. Depending on the voltage quantity and type (negative or positive) determines how the transistor operates whether it turns on or off.

Product OverviewThe high-performance Microchip picoPower® AVR ® RISC-based CMOS  8-bit microcontroller  combines 2 KB ISP  Flash memory, 128B EEPROM, 128B SRAM, six general purpose I/O lines, 32 general purpose working registers, one 8-bit timer/counter with compare modes, one 8-bit high-speed timer/counter, universal serial interface (USI), internal and external interrupts, 4-channel 10-bit A/D converter, programmable watchdog timer with internal oscillator, and three software selectable power saving modes  . The device operates between 2.7-5.5 volts. By executing powerful instructions in a single clock cycle, the device achieves throughputs approaching one MIPS per MHz, balancing power consumption and processor speed. This blog will introduce Attiny25 systematically from its features, pinout to its specifications, applications, also including Attiny25 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionATtiny25 FeaturesATtiny25 PinoutATtiny25 Block DiagramATtiny25 Programming DiagramATtiny25 PackageATtiny25 SpecificationATtiny25 ManufacturerATtiny25 DatasheetUsing WarningsATtiny25 FAQ Related Video Introduction Video: How to Program an ATtiny with  Arduino  (Up to Date) ATtiny25 Video Description: I explain how to program an ATtiny of any variety using Arduino as an ISP(programmer). This is the modern method and utilizes the most up to date software. ATtiny25 FeaturesHigh Performance, Low Power AVR® 8-Bit  MicrocontrollerAdvanced RISC Architecture– 120 Powerful Instructions – Most Single Clock Cycle Execution– 32 x 8 General Purpose Working Registers– Fully Static OperationNon-volatile Program and Data Memories– 2/4/8K Bytes of In-System Programmable Program Memory FlashEndurance: 10,000 Write/Erase Cycles– 128/256/512 Bytes In-System Programmable EEPROM Endurance: 100,000 Write/Erase Cycles– 128/256/512 Bytes Internal SRAM– Programming Lock for Self-Programming Flash Program and EEPROM  Data SecurityPeripheral Features– 8-bit Timer/Counter with Prescaler and Two PWM Channels– 8-bit High Speed Timer/Counter with Separate Prescaler2 High Frequency PWM Outputs with Separate Output Compare RegistersProgrammable Dead Time Generator– USI – Universal Serial Interface with Start Condition Detector– 10-bit ADC4 Single Ended Channels2 Differential ADC Channel Pairs with Programmable Gain(1x, 20x)Temperature Measurement– Programmable Watchdog Timer with Separate On-chip Oscillator– On-chip Analog ComparatorSpecial Microcontroller Features– debugWIRE On-chip Debug System– In-System Programmable via  SPI Port – External and Internal Interrupt Sources– Low Power Idle, ADC Noise Reduction, and Power-down Modes– Enhanced Power-on Reset Circuit– Programmable Brown-out Detection Circuit– Internal Calibrated OscillatorI/O and Packages– Six Programmable I/O Lines– 8-pin PDIP, 8-pin SOIC, 20-pad QFN/MLF, and 8-pin TSSOP (only ATtiny45/V)Operating Voltage– 1.8 - 5.5V for ATtiny25V/45V/85V– 2.7 - 5.5V for ATtiny25/45/85Speed Grade– ATtiny25V/45V/85V: 0 – 4 MHz @ 1.8 - 5.5V, 0 - 10 MHz @ 2.7 - 5.5V– ATtiny25/45/85: 0 – 10 MHz @ 2.7 - 5.5V, 0 - 20 MHz @ 4.5 - 5.5VIndustrial Temperature RangeLow Power Consumption– Active Mode:1 MHz, 1.8V: 300 µA– Power-down Mode:0.1 µA at 1.8V ATtiny25 PinoutThe following figure is the diagram of ATtiny25 pinout. ATtiny25 Pinout ATtiny25 Block DiagramThe following figure shows the block diagram of ATtiny25. ATtiny25 Block Diagram 8-bit Timer/Counter Block Diagram ATtiny25 Programming DiagramThe following is the programming diagram of ATtiny25.Notes: 1. If the device is clocked by the internal Oscillator, it is no need to connect a clock source to the CLKI pin. Serial Programming and Verify Serial Programming Instruction example High-voltage Serial Programming ATtiny25 PackageThe following diagram shows the ATtiny25 package. ATtiny25 Package ATtiny25 SpecificationMax ADC Resolution (bits)10Program Memory Size (KB)2Number of Comparators1CPU Speed (MIPS/DMIPS)20Data EEPROM (bytes)128Max 8 Bit Digital Timers2EthernetNoneI2C1Program Memory TypeFlashADC Channels4Low PowerNoOperating Voltage1.8 - 5.5outputcomparatorPWM5Pin Count8SPI1Temp Range (°C)-145 ATtiny25 ManufacturerMicrochip Technology Incorporated is a leading provider of smart, connected and secure embedded control solutions. Its easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs, which reduce risk while lowering total system cost and time to market. The company's solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets.  Microchip offers outstanding technical support along with dependable delivery and quality. ATtiny25 DatasheetYou can download ATtiny25 datasheet from the link given below:ATtiny25 DatasheetUsing WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. ATtiny25 FAQWhat is an ATtiny?ATtiny (also known as TinyAVR) are a subfamily of the popular 8-bit AVR microcontrollers, which typically has fewer features, fewer I/O pins, and less memory than other AVR series chips. The first members of this family were released in 1999 by Atmel (later acquired by Microchip Technology in 2016). What is a microcontroller used for?Microcontroller is a compressed micro computer manufactured to control the functions of embedded systems in office machines, robots, home appliances, motor vehicles, and a number of other gadgets. A microcontroller is comprises components like - memory, peripherals and most importantly a processor. What is difference between microprocessor and microcontroller?Microprocessor consists of only a Central Processing Unit, whereas Micro Controller contains a CPU, Memory, I/O all integrated into one chip. Microprocessor uses an external bus to interface to RAM, ROM, and other peripherals, on the other hand, Microcontroller uses an internal controlling bus. 

CatalogTMS3705A1DRG4 DescriptionTMS3705A1DRG4 Related Video InstructionTMS3705A1DRG4 CAD ModelsTMS3705A1DRG4 Pin ConfigurationTMS3705A1DRG4 Block DiagramTMS3705A1DRG4 FeaturesTMS3705A1DRG4 Application DiagramTMS3705A1DRG4 DatasheetTMS3705A1DRG4 SpecificationsTMS3705A1DRG4 ManufacturerUsing WarningTMS3705A1DRG4 FAQTMS3705A1DRG4 DescriptionThe transponder  base station IC is used to drive the antenna of a TI-RFid transponder system, to send data modulated on the antenna signal , and to detect and demodulate the response of the transponder,  The response of the transponder is a FSK signal (frequency shift keyed). The high or low bits are coded in two different high-frequency signals (134.2 kHz for low bits and 123 kHz for high bits, nominal). The transponder induces these signals in the antenna coil according an internally stored code. The energy the transponder  needs to send out the data is stored in a charge capacitor in the transponder, The antenna field charges this capacitor in a preceding charge phase. The IC has an interface to an external microcontroller. There are two configurations for the clock supply to both the microcontroller and the base station IC:Microcontroller and base station IC are supplied with a clock signal derived from only one resonator: Theresonator is attached to the microcontroller, The base station IC is supplied with a clock signal driven by thedigital clock output of the microcontroller,  The clock frequency is either 4 MHz or 2 MHz depending on the selected microcontroller type. Both the microcontroller and the base station have their own resonator.The base station IC has a PLL on-chip that generates a clock frequency of 16 MHz for internal clock supply only. The TMS3705BDRG4 is optimized for higher communication data rates and therefore works without frequency measurement during the write phase. TMS3705A1DRG4 Related Video InstructionVideo: Easier than expected: Choosing the right RFID transponderTMS3705A1DRG4 Video Description:Do you have trouble finding the right RFID transponder for your application? This video will help you to answer the right questions to solve this problem. TMS3705A1DRG4 CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model  TMS3705A1DRG4 Pin Configuration Figure: Pin Configuration TMS3705A1DRG4 Block Diagram Figure: Block Diagram TMS3705A1DRG4 FeaturesBase Station IC for T1-RFid RF ldentification SystemsDrives A ntennaSends Modulated Data to AntennaDetects and Demodulates TransponderResponse (FSK)Short-Circuit ProtectionDiagnosisSleep-Mode Supply Current: 0.2 mADesigned for Automotive Requirements16-Pin SOIc (D) Package TMS3705A1DRG4 Application Diagram Figure: Application Diagram TMS3705A1DRG4 DatasheetYou can download the datasheet from the link given below.TMS3705A1DRG4-Datasheet TMS3705A1DRG4 SpecificationsManufacturer:Texas InstrumentsProduct Category:RFID TranspondersOperating Frequency:134.2 kHzMaximum Operating Temperature:+ 85 ℃Minimum Operating Temperature:- 40 ℃Mounting Style:SMD/SMTPackage / Case:SOIC-Narrow-16Packaging:ReelPackaging:Cut TapePackaging:MouseReelManufacturer:Texas InstrumentsBrand:Texas InstrumentsMoisture Sensitive:YesOperating Temperature Range:- 40 ℃ to + 85 ℃Product Type:RFID TranspondersSeries:TMS3705Factory Pack Quantity:2500Subcategory:Wireless & RF Integrated CircuitsTechnology:SiUnit Weight:0.005644 oz TMS3705A1DRG4 ManufacturerTexas Instruments Incorporated (TI) is an American technology company headquartered in Dallas, Texas, that designs and manufactures semiconductors and various integrated circuits, which it sells to electronics designers and manufacturers globally. It is one of the top 10 semiconductor companies worldwide based on sales volume.The company's focus is on developing analog chips and embedded processors, which account for more than 80% of its revenue.TI also produces TI digital light processing technology and education technology products including calculators, microcontrollers and multi-core processors. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. TMS3705A1DRG4 FAQHow does RFID transponder work?The RFID reader is a network-connected device that can be portable or permanently attached. It uses radio waves to transmit signals that activate the tag. Once activated, the tag sends a wave back to the antenna, where it is translated into data. The transponder is in the RFID tag itself. What is RFID antenna used for?The antenna enables the chip of the RFID transponder to send identification information to an RFID reader or to receive requests. The antenna can either be directly integrated into the RFID reader (integrated antenna) or be separate from the RFID reader and connected via a lead (external antenna). What is the maximum range of RFID?Maximum read distance of 1.5 meters (4 foot 11 inches) - usually under 1 meter (3 feet) and you can use a single or multi port reader plus custom antennas to extend the read range to longer tag read distances or a wider RFID read zone. 

Product OverviewThe MFRC522 is a highly integrated reader/writer IC for contactless communication at 13.56 MHz. The MFRC522 reader supports ISO/IEC 14443 A/MIFARE and NTAG  . The MFRC522’s internal transmitter  is able to drive a reader/writer antenna  designed to communicate with  ISO/IEC 14443 A/MIFARE cards and transponders  without additional active circuitry. The receiver module  provides a robust and efficient implementation for demodulating and decoding signals from ISO/IEC 14443 A/MIFARE compatible cards and transponders. The digital module manages the complete ISO/IEC 14443 A framing and error detection (parity and CRC  ) functionality. This blog will introduce MFRC522 systematically from its features, pinout to its specifications, applications, also including MFRC522 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionMFRC522 FeaturesMFRC522 PinoutMFRC522 Block DiagramMFRC522 CAD ModelsMFRC522 Functional descriptionMFRC522 PackageMFRC522 SpecificationMFRC522 ManufacturerMFRC522 DatasheetUsing WarningsMFRC522 FAQ Related Video Introduction Video:  Arduino RFID Sensor (MFRC522) Tutorial MFRC522 Video Description: Hey friends in this tutorial I will show you how to make a RFID Card Sensor with Arduino MFRC522 FeaturesHighly integrated analog circuitry to demodulate and decode responsesBuffered output drivers for connecting an antenna  with the minimum number ofexternal componentsSupports ISO/IEC 14443 A/MIFARE and NTAG Typical operating distance in Read/Write mode up to 50 mm depending on theantenna size and tuningSupports MF1xxS20, MF1xxS70 and MF1xxS50 encryption in Read/Write modeSupports ISO/IEC 14443 A higher transfer speed communication up to 848 kBdSupports MFIN/MFOUTAdditional internal power supply to the smart card IC connected via MFIN/MFOUTSupported host interfaces- SPI up to 10 Mbit/s- I2C-bus interface up to 400 kBd in Fast mode, up to 3400 kBd in High-speed mode- RS232 Serial UART up to 1228.8 kBd, with voltage levels dependant on pin voltage supplyFIFO buffer handles 64 byte send and receiveFlexible interrupt modesHard reset with low power functionPower-down by software modeProgrammable timerInternal oscillator for connection to 27.12 MHz quartz crystal5 V to 3.3 V power supplyCRC coprocessorProgrammable I/O pinsInternal self-test MFRC522 PinoutThe following figure is the diagram of MFRC522 pinout. MFRC522 Pinout MFRC522 Block DiagramThe following figure shows the block diagram of MFRC522. MFRC522 Block Diagram MFRC522 CAD ModelsThe followings are MFRC522 Symbol, Footprint, and 3D Model. MFRC522 Symbol MFRC522 Footprint MFRC522 3D Model MFRC522 Functional descriptionThe MFRC522 transmission module supports the Read/Write mode for ISO/IEC 14443 A/MIFARE using various transfer speeds and modulation protocols. MFRC522 Read/Write mode MFRC522 PackageThe following diagram shows the MFRC522 package. MFRC522 Package MFRC522 SpecificationManufacturer:NXP SemiconductorsOperating Temperature-Max:85 °COperating Temperature-Min: -25 °CSupply Voltage-Max:3.6 VSupply Voltage-Min:2.5 VSupply Voltage-Nom:3.3 VTerminal Pitch:0.5 mmWidth:5 mm MFRC522 ManufacturerNXP Semiconductors N.V. enables secure connections for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the automotive, industrial & IoT, mobile and communication infrastructure markets. MFRC522 DatasheetYou can download MFRC522 datasheet from the link given below:MFRC522 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. MFRC522 FAQWhat is a reader IC?RFID reader ICs are integrated into reader modules or reader systems. Each RFID reader module or system has an IC that controls the signal sent out by the reader to the tag. Everything RF has listed RFID reader ICs from the leading manufacturers. What is a reader in RFID?The reader is a device that has one or more antennas that emit radio waves and receive signals back from the RFID tag. Tags, which use radio waves to communicate their identity and other information to nearby readers, can be passive or active. Passive RFID tags are powered by the reader and do not have a battery. What is the difference between NFC and RFID?NFC stands for Near-Field Communication. NFC is also based on the RFID protocols. The main difference to RFID is that a NFC device can act not only as a reader, but also as a tag (card emulation mode). NFC systems operate on the same frequency as HF RFID (13.56 MHz) systems.