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SQD40P10-40L_GE3 Automotive P-Channel MOSFET

  • Contents

Catalog

Features

Product Summary

Ordering Information

Absolute Maximum Ratings

Thermal Resistance Ratings

Specifications

Typical Characteristics

Thermal Ratings

Package Information

SQD40P10-40L_GE3 Datasheet

SQD40P10-40L_GE3 Manufacturer

SQD40P10-40L_GE3 FAQ

 

Features

  • Halogen-free According to IEC  61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • Package with Low Thermal Resistance
  • AEC-Q101 Qualifiedd
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive  2002/95/EC

 

Product Summary

VDS (V) -100
RDS(on) (Ω) at VGS = - 10 V 0.04
RDS(on) (Ω) at VGS = - 4.5 V 0.048
ID (A) -38
Configuration Single

 

Ordering Information

Package

TO-252

Lead (Pb)-free and Halogen-free

SQD40P10-40L-GE3

 

Absolute Maximum Ratings 

(TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID -38 A
TC = 125 °C -22
Continuous Source Current (Diode Conduction)a IS -50
Pulsed Drain Currentb IDM -150
Single Pulse Avalanche Current L = 0.1 mH IAS -44
Single Pulse Avalanche Energy EAS 96 mJ
Maximum Power Dissipationb TC = 25 °C PD 136 W
TC = 125 °C 45
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

 

Thermal Resistance Ratings

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

50

°C/W

Junction-to-Case (Drain)

RthJC

1.1

 

Notes

a.Package limited.

b.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c.When mounted on 1" square PCB (FR-4 material).

d.Parametric verification ongoing.

 

Specifications 

(TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA -100 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA -1 -2 -2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 100 V - - -1 μA
VGS = 0 V VDS = - 100 V, TJ = 125 °C - - -50
VGS = 0 V VDS = - 100 V, TJ = 175 °C - - -250
On-State Drain Currenta ID(on) VGS = - 10 V VDS ≤ - 5 V -30 - - A
Drain-Source On-State Resistancea RDS(on) VGS = - 10 V ID = - 9.2 A - 0.033 0.04 Ω
VGS = - 10 V ID = - 9.2 A, TJ = 125 °C - - 0.074
VGS = - 10 V ID = - 9.2 A, TJ = 175 °C - - 0.093
VGS = - 4.5 V ID = - 7.7 A - 0.037 0.048
Forward Transconductanceb gfs VDS = - 15 V, ID = - 9.2 A - 35 - S
Dynamicb
Input Capacitance Ciss VGS = 0 V VDS = - 25 V, f = 1 MHz - 4433 5545 pF
Output Capacitance Coss - 301 380
Reverse Transfer Capacitance Crss - 208 260
Total Gate Chargec Qg VGS = - 10 V VDS = - 50V, ID = - 9.2 A - 96 144 nC
Gate-Source Chargec Qgs - 8.4 -
Gate-Drain Chargec Qgd - 23.5 -
Gate Resistance Rg f = 1 MHz 1.5 3.13 4.7 Ω
Turn-On Delay Timec td(on) VDD = - 50 V, RL = 6.49 Ω
ID ≌ - 7.7 A, VGEN = - 10 V, Rg = 1.0 Ω
- 11 17 ns
Rise Timec tr - 11 17
Turn-Off Delay Timec td(off) - 78 117
Fall Timec tf - 15 23
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM   - - -150 A
Forward Voltage VSD IF = - 7.7 A, VGS = 0 V - -0.8 -1.5 V

 

Notes

a.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b.Guaranteed by design, not subject to production testing.

c.Independent of operating temperature.

 

Typical Characteristics 

(TA = 25 °C, unless otherwise noted)

Output Characteristics

Figure: Output Characteristics

 

 

Transfer Characteristics

Figure: Transfer Characteristics

 

 

 Transconductance

Figure: Transconductance

 

 

 On-Resistance vs. Drain Current

Figure: On-Resistance vs. Drain Current

 

 

 Capacitance

Figure: Capacitance

 

 

 Gate Charge

Figure: Gate Charge

 

 

 On-Resistance vs. Junction Temperature

Figure: On-Resistance vs. Junction Temperature

 

 

 Source Drain Diode Forward Voltage

Figure: Source Drain Diode Forward Voltage

 

 

 On-Resistance vs. Gate-to-Source Voltage

Figure: On-Resistance vs. Gate-to-Source Voltage

 

 

 Threshold Voltage

Figure: Threshold Voltage

 

 

 Drain Source Breakdown vs. Junction Temperature

Figure: Drain Source Breakdown vs. Junction Temperature

 

Thermal Ratings 

(TA = 25 °C, unless otherwise noted)

 Safe Operating Area

Figure: Safe Operating Area

 

Package Information

 TO-252AA Case Outline

Figure: TO-252AA Case Outline

  MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.03 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.1 - 0.161 -
E 6.35 6.73 0.25 0.265
E1 4.32 - 0.17 -
H 9.4 10.41 0.37 0.41
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.4 1.78 0.055 0.07
L3 0.89 1.27 0.035 0.05
L4 - 1.02 - 0.04
L5 1.01 1.52 0.04 0.06

 

SQD40P10-40L_GE3 Datasheet

You can download the datasheet from the link given below:

SQD40P10-40L_GE3 Datasheet

 

SQD40P10-40L_GE3 Manufacturer

Vishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors. Vishay Intertechnology revenues for 2018 were $3.035 billion. As of December 31, 2018, Vishay Intertechnology had approximately 24,100 full-time employees.

 

SQD40P10-40L_GE3 FAQ

What is P-channel Mosfet used for?

P-channel MOSFETs are often used for load switching. The simplicity of P-channel solutions on the high side makes them equally attractive for applications such as Low-Voltage Drives and non-isolated Point of Loads in systems where space is at a premium.

 

Which Mosfet is faster N-channel or P-channel?

The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device.

 

Where are MOSFETs used?

Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.

 

PCB Symbol, Footprint & 3D Model

 

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