The Kynix Components

Product OverviewThis Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. CatalogProduct OverviewMTB30P06VT4G FeaturesMTB30P06VT4G PinoutMaximum RatingsOrdering InformationElectrical Characteristics Typical Electrical CharacteristicsPower Mosfet SwitchingSafe Operating AreaMTB30P06VT4G PackageMTB30P06VT4G DatasheetUsing WarningsMTB30P06VT4G FAQ MTB30P06VT4G FeaturesAvalanche Energy SpecifiedIDSS and VDS(on) Specified at Elevated TemperatureAEC−Q101 Qualified and PPAP Capable − MTBV30P06VThese Devices are Pb−Free and are RoHS Compliant MTB30P06VT4G PinoutThe following figure is the diagram of MTB30P06VT4G pinout. MTB30P06VT4G Pinout Maximum RatingsRatingSymbolValueUnitDrain−to−Source VoltageVDSS60VdcGate−to−Source Voltage− Continuous− Non−repetitive (tp £ 10 ms) VGS VGSM ± 15± 25 Vdc VpkDrain Current − Continuous @ 25°C− Continuous @ 100°C− Single Pulse (tp £ 10 µs)ID ID IDM3019105Adc ApkTotal Power Dissipation @ 25°C Derate above 25°CTotal Power Dissipation @ TA = 25°C (Note 1)PD1250.833.0WW/°COperating and Storage Temperature RangeTJ, Tstg− 55 to175°CSingle Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 1.0 mH, RG = 25 Ω)EAS450mJThermal Resistance− Junction−to−Case− Junction−to−Ambient− Junction−to−Ambient (Note 1) RθJC RθJA RθJA 1.262.550° C/WMaximum Lead Temperature for Soldering Purposes, 1/8² from Case for 10 secondsTL260°C Ordering InformationDevicePackageShippingMTB30P06VGD2PAK(Pb−Free)50 Units / RailMTB30P06VT4GD2PAK(Pb−Free)800 / Tape & ReelMTBV30P06VT4GD2PAK(Pb−Free)800 / Tape & Reel Electrical CharacteristicsCharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc)V(BR)DSS 60 − − Vdc 62−mV/°C Temperature Coefficient (Positive) − Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc)IDSS − − 10µAdc −−100  (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)  Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)IGSS−−100nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage(VDS = VGS, ID = 250 µAdc)Threshold Temperature Coefficient (Negative)VGS(th) 2.0 2.6 4.0 Vdc mV/°C 5.3− − Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 15 Adc)RDS(on)−0.0670.08Ω Drain−Source On−Voltage (VGS = 10 Vdc, ID = 30 Adc)(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)VDS(on) −− 2.0 2.9Vdc −2.8 Forward Transconductance (VDS = 8.3 Vdc, ID = 15 Adc)gFS 5.0 7.9 −Mhos DYNAMIC CHARACTERISTICSInput Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)Ciss−15622190pFOutput CapacitanceCoss−524730Transfer CapacitanceCrss−154310SWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time (VDD = 30 Vdc, ID = 30 Adc, VGS = 10 Vdc, RG = 9.1 Ω)td(on)−14.730nsRise Timetr−25.950Turn−Off Delay Timetd(off)−98200Fall Timetf−52.4100Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 30 Adc, VGS = 10 Vdc)QT−5480nCQ1−9.0−Q2−26−Q3−20−SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage(IS = 30 Adc, VGS = 0 Vdc)(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)VSD −− 2.31.9 3.0−VdcReverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc,dIS/dt = 100 A/µs)trr−175−nsta−107−tb−68−Reverse Recovery Stored ChargeQRR−0.965−µC Typical Electrical CharacteristicsFigure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage Power Mosfet SwitchingSwitching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so thatt = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following:tr = Q2 x RG/(VGG − VGSP)tf = Q2 x RG/VGSPwhereVGG = the gate drive voltage, which varies from zero to VGGRG = the gate drive resistanceand Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are:td(on) = RG Ciss In [VGG/(VGG − VGSP)]td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current Safe Operating AreaThe Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forwardbiased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with anincrease of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Figure 13. Thermal Response Figure 14. Diode Reverse Recovery Waveform Figure 15. D2PAK Power Derating Curve MTB30P06VT4G PackageThe following diagram shows the MTB30P06VT4G package. MTB30P06VT4G Package MTB30P06VT4G DatasheetYou can download MTB30P06VT4G datasheet from the link given below:MTB30P06VT4G Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. MTB30P06VT4G FAQWhat modes is the Power MOSFET designed to withstand high energy? Avalanche and commutation. What is the Power MOSFET particularly well suited for? Bridge circuits. What is a MOSFET used for?The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain. What is MOSFET and how it works?A metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. It is used for switching or amplifying signals. What is the difference between MOSFET and transistor?The Bipolar Junction Transistor (BJT) is a current-driven device (in contrast, MOSFET is voltage-driven) that is widely used as an amplifier, oscillator, or switch, amongst other things. A BJT has three pins – the base, collector, and emitter – and two junctions: a p-junction and n-junction. 

CatalogSpecificationsTechnical InformationKey Features And BenefitsApplicationsMechanical TestElectrical TestEnvironmental TestDimensions CJ688TGBU DatasheetCJ688TGBU FAQSpecificationsCategory 6/Class E, 8-position, UTP jack module shall terminate 4-pair, 22 – 26 AWG, 100 ohm unshielded twisted pair cable and shall not require use of a punchdown tool. UTP jack modules shall use a forward motion termination method to optimize performance by maintaining cable pair geometry while eliminating conductor untwist. The termination cap shall be color-coded white to designate Category 6 performance and shall include a universal label coded for T568A and T568B wiring schemes. Technical InformationCategory 6/Class E channel and component performanceExceeds channel requirements of ANSI/TIA-568.2-D Category 6 and ISO 11801 Class E standards at swept frequencies 1 to 250 MHz Exceeds component requirements of ANSI/TIA-568.2-D Category 6 and ISO 11801 Class E standards at swept frequencies 1 to 250 MHzFCC and ANSI complianceMeets ANSI/TIA-1096-A contacts plated with 50 microinches of gold for superior performanceIEC complianceMeets IEC 60603-7 and IEC 60512-99-001RoHS complianceCompliantPoE & PoH complianceRated for 2500 cycles with IEEE 802.3af / 802.3at and 802.3bt type 3 and type 4. Supports Power over HDBaseT up to 100 wattsUL ratedUL 1863 (Use as communications circuit accessory) UL 2043 (Suitable for use in air-handling spaces)Operating Temperature-10°C to 65°C (14°F to 149°F)Conductor termination rangeWire cap compatible with 22 – 26 AWG solid or stranded cable with conductor insulation diameters of 0.060 in. max. and overall cable O.D. 0.200 in. to 0.330 in. Key Features And Benefits100% performance testedConfidence that each jack module will deliver the critical electrical performance requirementsUtilizes enhanced Giga-TX ™ TechnologyOptimizes performance by eliminating conductor untwist and reduces installation time and expenseModularUTP jack modules snap in and out of all Mini-Com® Faceplates, Modular Patch Panels and Surface Mount Boxes for easy moves, adds, and changesIndividually serializedMarked with quality control number for future traceabilityRJ45 interfaceIndustry standard interface provides a quick and easy plug and play connection to RJ45 patch cords; backwards compatibleIdentificationCan be clearly identified with optional labels and icons for port identificationAngle termination version availableSide opening allows cable to be terminated to the right or left side of the jack module; ideal for installations that have minimal depth that may not allow standard bend radius practices to be accommodatedTermination tools (optional)EGJT-1 termination tool ensures conductors are fully terminated by utilizing a smooth forward motion without impact on critical internal components for maximum reliability; TGJT termination tool ideal for high volume installationsBlock out device (optional)Provides a simple and secure method to control access to data ports while not in useShuttered version (optional)Integrated spring shuttered door keeps out dust and debris of unmated RJ45 jack modules automatically ApplicationsMini-Com® TX6™ PLUS UTP Jack Modules are a component of the TX6™ PLUS UTP Copper Cabling System. This end-to-end system is interoperable and backwards compatible, providing design flexibility to protect network investments well into the future. With certified performance to the ANSI/TIA-568.2-D Category 6 and ISO 11801 Class E standards, this system is ideal for today's high performance workstation applications. With certified performance to the ANSI/TIA-568.2-D Category 6 and ISO 11801 Class E standards, these systems will support the following applications:Ethernet 10BASE-T, 100BASE-T (Fast Ethernet), 1000BASE-T (Gigabit Ethernet)155 Mb/s ATM, 622 Mb/s ATM, 1.2 Gb/s ATMToken Ring 4/16Digital video and broadband/baseband analog videoVoice over Internet Protocol (VoIP) Mechanical TestMechanical TestTest MethodMeasurementTypical Test ResultsNormal Force—Load (grams)> 100VibrationIEC 512-6dCircuit Resistance (mOhms)< 40ShockIEC 512-6cContact Disturbance (microseconds)< 5DurabilityIEC 512-9aCircuit Resistance (mOhms)< 40Mating/Un-matingIEC 512-13bMating Force (N)< 20Un-mating Force (N)< 20Termination CyclesIEC 352Number of Cycles>20Mating CylcesIEC 60603-7Number of plug insertions> 2500 Electrical TestElectrical TestTest MethodMeasurementTypical Test ResultsLow Level Circuit ResistanceIEC 512-2aResistance (mOhms)< 20Dielectric Withstand VoltageIEC 512-4a1000 V, 1 minutePassedInsulation ResistanceIEC 512-3aResistance (MOhms)> 500 Environmental TestEnvironmental TestTest MethodMeasurementTypical Test ResultsTemperature LifeIEC 512-9bCircuit Resistance (mOhms)< 40HumidityIEC 512-11cCircuit Resistance (mOhms)< 40Thermal ShockIEC 512-11dCircuit Resistance (mOhms)< 40Climatic SequenceIEC 512-11aCircuit Resistance (mOhms)< 40Flowing Mixed Gas CorrosionIEC 512-11gCircuit Resistance (mOhms)< 40 Dimensions CJ688TGBU DatasheetYou can download the datasheet of CJ688TGBU from the link given below:CJ688TGBU Datasheet CJ688TGBU FAQWhat is Jack module?The Mini-Com® Cat 6 UTP RJ45 TG Jack Module is designed to terminate 4-pair, 22-26 AWG twisted pair cable. Each module is 100% factory tested to exceed industry standard performance requirements. TG style termination eliminates the need for a termination tool. Each jack is individually serialized fo. What is network keystone jack?A keystone jack is a female connector used in data communications, particularly local area networks (LANs). The jack is usually mounted in a wall plate or patch panel. A keystone plug is the matching male connector, usually attached to the end of a cable or cord. What is UTP work?UTP Cable is a shorter way of saying unshielded twisted pair. This is one of the least expensive wires and works for basic needs of phone systems so it is one of the most commonly installed in residential industries. The twisted cable pairs work to cancel out EMI (electromagnetic interference) from external sources. How does UTP transmit data?Inside a UTP cable is up to four twisted pairs of copper wires, enclosed in a protective plastic cover, with the greater number of pairs corresponding to more bandwidth. The two individual wires in a single pair are twisted around each other, and then the pairs are twisted around each other, as well. Is RJ45 an UTP?Both are well-known components of Ethernet networks. The CAT5e classification of Unshielded Twisted Pair cable is the most widely implemented cable type for Ethernet networks. The regular connector for the UTP cable is called an RJ45. 

 CatalogDescriptionPin ConfigurationBlock DiagramTypical ApplicationFeaturesApplicationsDatasheetProduct AttributesManufacturerUsing WarningDescriptionThe LTC4368 protects applications from power supply voltages that may be too high, too low, or even negative and from overcurrent faults in both forward and reverse directions. The LTC4368 controls the gate voltage of a pair of external N-channel MOSFETs to ensure that the load is connected to the input supply only when there are no voltage or current faults. Two comparator inputs allow configuration of the overvoltage (OV) and undervoltage (UV) set points using an external resistive divider. A current sense resistor sets the forward and reverse circuit breaker current thresholds. After a forward current fault, the LTC4368 will either latchoff power, or retry after a user adjustable delay. After a reverse current fault, the LTC4368 waits for the output to fall 100mV below the input to reconnect power to the load. The LTC4368 has a 32ms turn-on delay that debounces live supply input connections and blocks 50Hz and 60Hz AC power. UV/OV faults also trigger the 32ms recovery delay before the external MOSFETs are turned back on. Pin Configuration Figure: LTC4368IMS-1#PBF Pin Configuration Block Diagram Figure: LTC4368IMS-1#PBF Block Diagram Typical Application Figure: LTC4368IMS-1#PBF Typical Applications FeaturesWide Operating Voltage Range: 2.5V to 60VOvervoltage Protection to 100VReverse Supply Protection to –40VBidirectional Electronic Circuit Breaker:             +50mV Forward Sense Threshold             –50mV Reverse (LTC4368-1)             –3mV Reverse (LTC4368-2)Adjustable ±1.5% Undervoltage and Overvoltage ThresholdsLow Operating Current: 80µALow Shutdown Current: 5µAControls Back-to-Back N-Channel MOSFETsBlocks 50Hz and 60Hz AC PowerHot Swappable Supply InputPin-Selectable Overcurrent Auto-Retry Timer or Latchoff10-Pin MSOP and 3mm × 3mm DFN PackagesAEC-Q100 Qualified for Automotive Applications ApplicationsReverse Battery ProtectionPortable InstrumentationAutomotive and Industrial Surge ProtectionEnergy Storage Systems DatasheetLTC4368IMS-1#PBF-Datasheet Product AttributesManufacturer:Analog Devices Inc.Product Category:Surge SuppressorsSeries:LTC4368Mounting Style:SMD/SMTProduct:Industrial Protection DevicesType:Protection ControllerVoltage Rating:2.5 V to 60 VCurrent Rating:30 uATermination Style:SMD/SMTPackage / Case:MSOP-10Minimum Operating Temperature:- 40 ℃Maximum Operating Temperature:+ 85 ℃Packaging:TubeHeight:0.86 mmLength:3 mmWidth:3 mmBrand:Analog DevicesProduct Type:SPD - Surge Protection DevicesFactory Pack Quantity:50Subcategory:Surge SuppressorsUnit Weight:0.000967 oz ManufacturerAnalog Devices, Inc. (ADI), also known simply as Analog, is an American multinational semiconductor company specializing in data conversion, signal processing and power management technology, headquartered in Wilmington, Massachusetts. In 2012, Analog Devices led the worldwide data converter market with a 48.5% share, according to analyst firm Databeans. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

 CatalogDescriptionCAD ModelsPin ConfigurationBlock DiagramFeaturesApplicationsDatasheetProduct AttributesManufacturerUsing WarningDescriptionThe LT3092 is a programmable 2-terminal current source. It requires only two resistors to set an output current between 0.5mA and 200mA. A multitude of analog techniques lend themselves to actively programming the output current. The LT3092 is stable without input and output capacitors, offering high DC and AC impedance. This feature allows operation in intrinsically safe applications. The SET pin features 1% initial accuracy and low temperature coefficient. Current regulation is better than 10ppm/V from 1.5V to 40V. The LT3092 can operate in a 2-terminal current source configuration in series with signal lines. It is ideal for driving sensors, remote supplies, and as a precision current limiter for local supplies. Internal protection circuitry includes reverse-battery and reverse-current protection, current limiting and thermal limiting. The LT3092 is offered in the 8-lead TSOT-23, 3-lead SOT-223 and 8-lead 3mm × 3mm DFN packages. CAD Models Figure:  PCB Symbol  Figure:  Footprint  Figure:  3D Model Pin Configuration Figure:  Pin Configuration Block Diagram Figure:  Block Diagram FeaturesProgrammable 2-Terminal Current SourceMaximum Output Current: 200mAWide Input Voltage Range: 1.2V to 40VInput/Output Capacitors Not RequiredResistor Ratio Sets Output CurrentInitial Set Pin Current Accuracy: 1%Reverse-Voltage ProtectionReverse-Current Protection<0.001%/V Line Regulation TypicalCurrent Limit and Thermal Shutdown ProtectionAvailable in 8-Lead SOT-23, 3-Lead SOT-223 and 8-Lead 3mm × 3mm DFN PackagesAEC-Q100 Qualified for Automotive Applications Applications2-Terminal Floating Current SourceGND Referred Current SourceVariable Current SourceIn-Line LimiterIntrinsic Safety Circuits DatasheetLT3092ETS8#TRMPBF-Datasheet Product AttributesManufacturer:Analog Devices Inc.Product Category:Current & Power Monitors & RegulatorsProduct:Current MonitorsSupply Voltage - Max:40 VSupply Voltage - Min:1.2 VOperating Supply Current:0.3 mAAccuracy:0.01Minimum Operating Temperature:- 40 ℃Maximum Operating Temperature:+ 125 ℃Mounting Style:SMD/SMTPackage / Case:SOT-23-8Packaging:Cut TapePackaging:MouseReelPackaging:ReelOutput Current:200 mASeries:LT3092Brand:Analog DevicesInput Voltage Range:1.2 V to 40 VProduct Type:Current & Power Monitors & RegulatorsFactory Pack Quantity:500Subcategory:PMIC - Power Management ICsUnit Weight:0.007054 oz ManufacturerAnalog Devices, Inc. (ADI), also known simply as Analog, is an American multinational semiconductor company specializing in data conversion, signal processing and power management technology, headquartered in Wilmington, Massachusetts. In 2012, Analog Devices led the worldwide data converter market with a 48.5% share, according to analyst firm Databeans. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

CatalogFeaturesDescriptionAbsolute Maximum RatingsThermal ResistanceElectrical CharacteristicsSource-Drain Ratings and CharacteristicsTypical Characteristics and GraphsPackage OutlinePart Marking InformationDatasheet PDF DownloadIRFP260 FAQ FeaturesAdvanced ProcessTechnologyDynamic dv/dtRating175°C OperatingTemperatureFastSwitchingFully AvalancheRatedEase ofParallelingSimple DriveRequirementsLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.Absolute Maximum Ratings ParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V50 AID @ TC = 100°CContinuous Drain Current, VGS @ 10V35IDMPulsed Drain Current ➀200PD @TC = 25°CPower Dissipation300W Linear Derating Factor2.0W/°CVGSGate-to-Source Voltage±20VEASSingle Pulse Avalanche Energy560mJIARAvalanche Current➀50AEARRepetitive Avalanche Energy➀30mJdv/dtPeak Diode Recovery dv/dt ➂10V/nsTJTSTGOperating Junction andStorage Temperature Range-55 to +175 °C Soldering Temperature, for 10 seconds300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m) Thermal Resistance ParameterTyp.Max.UnitsRqJCJunction-to-Case–––0.50 °C/WRqCSCase-to-Sink, Flat, Greased Surface0.24–––RqJAJunction-to-Ambient–––40Electrical Characteristics ParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-Source Breakdown Voltage200––––––VVGS = 0V, ID = 250µADV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient–––0.26–––V/°CReference to 25°C, ID = 1mARDS(on)Static Drain-to-Source On-Resistance––––––0.04LVGS = 10V, ID = 28A     VGS(th)Gate Threshold Voltage2.0–––4.0VVDS = VGS, ID = 250µAgfsForward Transconductance27––––––SVDS = 50V, ID = 28A  IDSSDrain-to-Source Leakage Current––––––25µAVDS = 200V, VGS = 0V––––––250VDS = 160V, VGS = 0V, TJ = 150°CIGSSGate-to-Source Forward Leakage––––––100nAVGS = 20VGate-to-Source Reverse Leakage––––––-100VGS = -20VQgTotal Gate Charge––––––234 nCID = 28A VDS = 160VVGS = 10V  QgsGate-to-Source Charge––––––38QgdGate-to-Drain ("Miller") Charge––––––110td(on)Turn-On Delay Time–––17––– nsVDD = 100V ID = 28A RG = 1.8LVGS = 10V     trRise Time–––60–––td(off)Turn-Off Delay Time–––55–––tfFall Time–––48–––LDInternal Drain Inductance–––5.0––– nHBetween lead, D6mm (0.25in.)from package Gand center of die contact SLSInternal Source Inductance–––13–––CissInput Capacitance–––4057––– pFVGS = 0V VDS = 25Vƒ = 1.0MHzCossOutput Capacitance–––603–––CrssReverse Transfer Capacitance–––161–––Source-Drain Ratings and Characteristics ParameterMin.Typ.Max.UnitsConditionsISContinuous Source Current(Body Diode)––––––50 AMOSFET symbol Dshowing theintegral reverse Gp-n junction diode. SISMPulsed Source Current(Body Diode)➀––––––200VSDDiode Forward Voltage––––––1.3VTJ = 25°C, IS = 28A, VGS = 0V  trrReverse Recovery Time–––268402nsTJ = 25°C, IF = 28Adi/dt = 100A/µs  QrrReverse Recovery Charge–––1.92.8mCtonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical Characteristics and Graphs     Package OutlinePart Marking InformationDatasheet PDF DownloadYou can download the datasheet of IRFP260 from the link given below.IRFP260-DatasheetIRFP260 FAQWhat is power MOSFET and its types?Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.Why power MOSFET is vertical?The vertical orientation eliminates crowding at the gate and offers larger channel widths. In addition, thousands of these transistor "cells" are combined into one in order to handle the high currents and voltage required of such devices.What is the construction of power MOSFET?A power MOSFET actually consists of a parallel connection of thousands of basic MOSFET cells on the same single chip of silicon. When gate circuit voltage is zero, and VDD is present , n−−p− junctions are reverse biased and no current flows from drain to source. 

CatalogMPU9250 DescriptionMPU9250 Related Video InstructionMPU9250 CAD ModelsMPU9250 Pin ConfigurationMPU9250 Block DiagramMPU9250 FeaturesMPU9250 ApplicationsMPU9250 DatasheetMPU9250 SpecificationsMPU9250 ManufacturerUsing WarningMPU9250 FAQMPU9250 DescriptionMPU-9250 is a multi-chip module (MCM) consisting of two dies integrated into a single QFN package. One die houses the 3-Axis gyroscope and the 3-Axis accelerometer . The other die houses the AK8963 3-Axis magnetometer from Asahi Kasei Microdevices Corporation. Hence, the MPU-9250 is a 9-axis MotionTracking device that combines a 3-axis gyroscope, 3-axis accelerometer.  3-axis magnetometer and a Digital Motion Processor (DMP) all in a small 3x3x1mm package available as a pin-compatible upgrade from the MPU-6515. With its dedicated I2 C sensor bus  , the MPU-9250 directly provides complete 9-axis MotionFusion output. The MPU-9250 MotionTracking device, with its 9-axis integration, on-chip MotionFusion , and run-time calibration firmware , enables manufacturers to eliminate the costly and complex selection, qualification, and system level integration of discrete devices, guaranteeing optimal motion performance for consumers. MPU-9250 is also designed to interface with multiple non-inertial digital sensors, such as pressure sensors , on its auxiliary I2C port. MPU9250 Related Video InstructionVideo: MPU9250 module with Arduino Tutorials -Accelerometer, gyroscope and Magnetometer sensorMPU9250 Video Description:In this video you will learn about the MPU9250 Gyroscope, Accelerometer, Magnetometer sensor with library installation and code explanation. MPU9250 CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model MPU9250 Pin Configuration Figure: Pin Configuration MPU9250 Block Diagram Figure: Block Diagram MPU9250 FeaturesGyroscope FeaturesThe triple-axis MEMS gyroscope in the MPU-9250 includes a wide range of features:Digital-output X-, Y-, and Z-Axis angular rate sensors (gyroscopes) with a user-programmable fullscale range of ±250, ±500, ±1000, and ±2000°/sec and integrated 16-bit ADCs Digitally-programmable low-pass filterGyroscope operating current : 3.2mASleep mode current: 8µAFactory calibrated sensitivity scale factorSelf-test Accelerometer FeaturesThe triple-axis MEMS accelerometer  in MPU-9250 includes a wide range of features:Digital-output triple-axis accelerometer with a programmable full scale range of ±2g, ±4g, ±8g and ±16g and integrated 16-bit ADCsAccelerometer normal operating current : 450µALow power accelerometer mode current: 8.4µA at 0.98Hz, 19.8µA at 31.25HzSleep mode current: 8µAUser-programmable interruptsWake-on-motion interrupt for low power operation of applications processorSelf-test Magnetometer FeaturesThe triple-axis MEMS magnetometer in MPU-9250 includes a wide range of features:3-axis silicon monolithic Hall-effect magnetic sensor with magnetic concentratorWide dynamic measurement range and high resolution with lower current consumption.Output data resolution of 14 bit (0.6µT/LSB) or 16 bit (15µT/LSB)Full scale measurement range is ±4800µTMagnetometer normal operating current : 280µA at 8Hz repetition rateSelf-test function with internal magnetic source to confirm magnetic sensor operation on end products Additional FeaturesThe MPU-9250 includes the following additional features:Auxiliary master I2C bus for reading data from external sensors (e.g. pressure sensor)3.5mA operating current when all 9 motion sensing axes and the DMP  are enabledVDD supply voltage range of 2.4 – 3.6VVDDIO reference voltage for auxiliary I2C devicesSmallest and thinnest QFN package for portable devices: 3x3x1mmMinimal cross-axis sensitivity between the accelerometer.  gyroscope and magnetometer axes512 byte FIFO buffer enables the applications processor to read the data in burstsDigital-output temperature sensorUser-programmable digital filters for gyroscope, accelerometer , and temp sensor10,000 g shock tolerant400kHz Fast Mode I2C for communicating with all registers1MHz SPI serial interface for communicating with all registers20MHz SPI serial interface for reading sensor and interrupt registersMEMS structure hermetically sealed and bonded at wafer levelRoHS and Green compliant MPU9250 ApplicationsTouchAnywhere technology (for ''no touch” UI Application Control / Navigation)MotionCommand technology (for Gesture Short-cuts)Motion-enabled game and application frameworkLocation based services, points of interest, and dead reckoningHandset and portable gamingMotion-based game controllers3D remote controls for Internet connected DTVs and set top boxes, 3D miceWearable sensors for health, fitness and sports MPU9250 DatasheetYou can download the datasheet from the link given below.MPU9250-Datasheet MPU9250 SpecificationsManufacturer Part Number:MPU9250Rohs Code:YesPart Life Cycle Code:ObsoletePackage Description:HQCCNReach Compliance Code:compliantHTS Code:8542.39.00.01Manufacturer:InvenSense IncRisk Rank:7.98Analog IC - Other Type:ANALOG CIRCUITJESD-30 Code:S-XQCC-N24Length:3 mmNumber of Functions:1Number of Terminals:24Operating Temperature-Max:85 °COperating Temperature-Min:-40 °CPackage Code:HQCCNPackage Shape:SQUAREPackage Style:CHIP CARRIER, HEAT SINK/SLUGSeated Height-Max:1.05 mmSupply Voltage-Max (Vsup):3.6 VSupply Voltage-Min (Vsup):2.4 VSupply Voltage-Nom (Vsup):2.5 VSurface Mount:YESTemperature Grade:INDUSTRIALTerminal Pitch:0.4 mmTerminal Position:QUAD MPU9250 ManufacturerInvenSense Inc. is the provider of the MotionTracking sensor system on chip (SoC) which functions as a gyroscope for consumer electronic devices such as smartphones, tablets, wearables, gaming devices, optical image stabilization, and remote controls for Smart TVs. InvenSense provides the motion controller in the Nintendo Wii game controller and the Oculus Rift DK1. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. MPU9250 FAQWhat size package is the MPU-9250 available as a pin-compatible upgrade from the MPU-6515?3x3x1mm. What is one of the additional features of the MPU-9250?Auxiliary master I2C bus. What is the Auxiliary master I2C bus for reading data from external sensors?Pressure sensor. Whats an MCM package?A multi-chip module (MCM) is an electronic package consisting of multiple integrated circuits (ICs) assembled into a single device. An MCM works as a single component and is capable of handling an entire function. ... The module can be encapsulated by a plastic molding and is mounted on the printed circuit board. What are the characteristics of the multichip module?A multichip module (MCM) package consists of a multilevel structure containing a repetition of several layers of conductors. Compared to lithography, electrochemical microfabrication produces thick conductors with lateral dimensions in the submicrometer range for advanced MCM packages.