CatalogProduct OverviewFQP13N10 CAD ModelsFQP13N10 Test CircuitsFQP13N10 Mechanical DimensionsFQP13N10 FeaturesFQP13N10 DatasheetFQP13N10 SpecificationsFQP13N10 ManufacturerUsing WarningFQP13N10 FAQ Product OverviewThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. FQP13N10 CAD ModelsFigure: FQP13N10 PCB Symbol  Figure: FQP13N10 Footprint  Figure: FQP13N10 3D Models FQP13N10 Test CircuitsFigure: FQP13N10 Gate Charge Test Circuit & Waveform  Figure: FQP13N10 Resistive Switching Test Circuit & Waveforms  Figure: FQP13N10 Unclamped Inductive Switching Test Circuit & Waveforms FQP13N10 Mechanical DimensionsFigure: FQP13N10 Mechanical Dimensions FQP13N10 Features12.8 A, 100 V, Rps(on) = 180 mQ (Max.) @ VGs= 10 V,lD=6.4ALow Gate Charge (Typ. 12 nC)Low Crss (Typ. 20 pF)100% Avalanche Tested175°C Maximum Junction Temperature Rating FQP13N10 DatasheetYou can download the datasheet from the link given below:FQP13N10 Datasheet FQP13N10 SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:100 VId - Continuous Drain Current:12.8 ARds On - Drain-Source Resistance:180 mOhmsVgs - Gate-Source Voltage:- 25 V, + 25 VVgs th - Gate-Source Threshold Voltage:2 VQg - Gate Charge:16 nCOperating Temperature:-55°C ~ 175°C (TJ)Pd - Power Dissipation:65 WChannel Mode:EnhancementTradename:QFETPackaging:TubeBrand:onsemi / FairchildConfiguration:SingleFall Time:25 nsForward Transconductance - Min:6.8 SHeight:16.3 mmLength:10.67 mmProduct Type:MOSFETRise Time:55 nsSeries:FQP13N10Subcategory:MOSFETsTransistor Type:1 N-ChannelType:MOSFETTypical Turn-Off Delay Time:20 nsTypical Turn-On Delay Time:5 nsWidth:4.7 mmPart # Aliases:FQP13N10_NLUnit Weight:0.068784 oz FQP13N10 ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FQP13N10 FAQWhat is MOSFET and how it works?In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal. What is MOSFET used for?The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain. What devices use MOSFET?Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications. What is the difference between Transistor and MOSFET?The Bipolar Junction Transistor (BJT) is a current-driven device (in contrast, MOSFET is voltage-driven) that is widely used as an amplifier, oscillator, or switch, amongst other things. How MOSFET works as an amplifier?A small change in gate voltage produces a large change in drain current as in JFET. This fact makes MOSFET capable of raising the strength of a weak signal; thus acting as an amplifier. During the positive half-cycle of the signal, the positive voltage on the gate increases and produces the enhancement-mode.