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FQP13N10 MOSFET: CAD Models, Datasheet, Features [FAQ]

  • Contents

Catalog

Product Overview

FQP13N10 CAD Models

FQP13N10 Test Circuits

FQP13N10 Mechanical Dimensions

FQP13N10 Features

FQP13N10 Datasheet

FQP13N10 Specifications

FQP13N10 Manufacturer

Using Warning

FQP13N10 FAQ

 

Product Overview

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

 

FQP13N10 CAD Models

FQP13N10 PCB Symbol

Figure: FQP13N10 PCB Symbol

 

 

FQP13N10 Footprint

Figure: FQP13N10 Footprint

 

 

FQP13N10 3D Models

Figure: FQP13N10 3D Models

 

FQP13N10 Test Circuits

FQP13N10 Gate Charge Test Circuit & Waveform

Figure: FQP13N10 Gate Charge Test Circuit & Waveform

 

 

FQP13N10 Resistive Switching Test Circuit & Waveforms

Figure: FQP13N10 Resistive Switching Test Circuit & Waveforms

 

 

FQP13N10 Unclamped Inductive Switching Test Circuit & Waveforms

Figure: FQP13N10 Unclamped Inductive Switching Test Circuit & Waveforms

 

FQP13N10 Mechanical Dimensions

FQP13N10 Mechanical Dimensions

Figure: FQP13N10 Mechanical Dimensions

 

FQP13N10 Features

  • 12.8 A, 100 V, Rps(on) = 180 mQ (Max.) @ VGs= 10 V,lD=6.4A
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 20 pF)
  • 100% Avalanche Tested
  • 175°C Maximum Junction Temperature Rating

 

FQP13N10 Datasheet

You can download the datasheet from the link given below:

FQP13N10 Datasheet

 

FQP13N10 Specifications

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 12.8 A
Rds On - Drain-Source Resistance: 180 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 16 nC
Operating Temperature: -55°C ~ 175°C (TJ)
Pd - Power Dissipation: 65 W
Channel Mode: Enhancement
Tradename: QFET
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 25 ns
Forward Transconductance - Min: 6.8 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 55 ns
Series: FQP13N10
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 5 ns
Width: 4.7 mm
Part # Aliases: FQP13N10_NL
Unit Weight: 0.068784 oz

 

FQP13N10 Manufacturer

Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

FQP13N10 FAQ

What is MOSFET and how it works?

In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

 

What is MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain.

 

What devices use MOSFET?

Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.

 

What is the difference between Transistor and MOSFET?

The Bipolar Junction Transistor (BJT) is a current-driven device (in contrast, MOSFET is voltage-driven) that is widely used as an amplifier, oscillator, or switch, amongst other things.

 

How MOSFET works as an amplifier?

A small change in gate voltage produces a large change in drain current as in JFET. This fact makes MOSFET capable of raising the strength of a weak signal; thus acting as an amplifier. During the positive half-cycle of the signal, the positive voltage on the gate increases and produces the enhancement-mode.

 

FQP13N10 Documents & Media

Download datasheets and manufacturer documentation for ON Semiconductor FQP13N10.

FQP13N10 PCB Symbol, Footprint & 3D Model

ON Semiconductor FQP13N10

ON Semiconductor

MOSFET N-CH/100V/12.8A 0.18OHM

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