CatalogProduct OverviewMBR0530T1G CAD ModelsMBR0530T1G Package DimensionsMBR0530T1G Marking DiagramMBR0530T1G FeaturesMBR0530T1G Mechanical CharacteristicsMBR0530T1G DatasheetMBR0530T1G SpecificationsMBR0530T1G ManufacturerUsing WarningMBR0530T1G FAQ Product OverviewThe MBR0530 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. MBR0530T1G CAD ModelsFigure: MBR0530T1G PCB Symbol  Figure: MBR0530T1G Footprint  Figure: MBR0530T1G 3D Models MBR0530T1G Package DimensionsFigure: MBR0530T1G Package Dimensions MBR0530T1G Marking DiagramFigure: MBR0530T1G Marking DiagramB3 = Device CodeM = Date Code MBR0530T1G FeaturesGuardring for Stress ProtectionLow Forward Voltage125°C Operating Junction TemperatureEpoxy Meets UL 94, V−0 @ 0.125 inPackage Designed for Optimal Automated BoardAssemblyNRVB Prefix for Automotive and Other Applications Requiring     Unique Site and Control Change Requirements; AEC−Q101     Qualified and PPAP CapableThese Devices are Pb−Free and are RoHS Compliant* MBR0530T1G Mechanical CharacteristicsPolarity Designator: Cathode BandWeight: 11.7 mg (approximately)Case: Epoxy, MoldedFinish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily SolderableLead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds MBR0530T1G DatasheetYou can download the datasheet from the link given below:MBR0530T1G Datasheet MBR0530T1G SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:Schottky Diodes & RectifiersProduct:Schottky DiodesMounting Style:SMD/SMTPackage / Case:SOD-123-2Configuration:SingleTechnology:SiIf - Forward Current:500 mAVrrm - Repetitive Reverse Voltage:30 VVf - Forward Voltage:430 mVIfsm - Forward Surge Current:5.5 AIr - Reverse Current:130 uAOperating Temperature:-65°C ~ 125°CSeries:MBR0530Brand:onsemiHeight:1.12 mmLength:2.69 mmProduct Type:Schottky Diodes & RectifiersSubcategory:Diodes & RectifiersTermination Style:SMD/SMTType:Schottky DiodeWidth:1.6 mmPart # Aliases:MBR0530T3GUnit Weight:0.001058 oz MBR0530T1G ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. MBR0530T1G FAQWhat is the Schottky diode and how it works?In a Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, thus creating a Schottky barrier. The N-type semiconductor acts as the cathode and the metal side acts as the anode of the diode. This Schottky barrier results in both a low forward voltage drop and very fast switching. What are the advantages of Schottky diodes?Advantages of Schottky diode :High efficiency.Fast recovery time so it can be mostly used in the application of high-speed switching.Low junction capacitance.The low forward voltage drop.It can operate high frequency.Schottky diode produces less unwanted noise than P-N junction diode.High current density. What is Schottky diode used for?Compared to p-n diodes, a Schottky diode provides lower voltage drop across the diode at low reverse bias. Some applications of Schottky diodes include rectifiers in switching regulators, discharge protection in power electronics, and rectifying circuits requiring high switching rate.