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Warm hints: The word in this article is about 3000 words and reading time is about 12 minutes.     This article would introduce you different kinds of power supply circuits.   Catalog   I. Circuit Arrangement of Switching Power Supply II. The Principle of the Input Circuit and the Common Circuits 2.1 Principle of AC Input Rectifier Filter Circuit 2.1.1 Lightning Protection Circuit 2.1.2 Input Filter Circuit 2.1.3 Rectifier Filter Circuit 2.2 Principle of DC Input Filter Circuit 2.2.1 Input Filter Circuit 2.2.2 The Anti-surge Circuit III. Power Conversion Circuits 3.1 The Working Principle of MOS Tube 3.2  Common Schematic Diagram 3.3 Working Principle 3.4 Push-pull Power Conversion Circuit 3.5 Power Conversion Circuit with Transformer Driver IV. Output Rectifier Filter Circuit 4.1 Forward Rectifier Circuit 4.2 Flyback Fectifier Circuit 4.3 Synchronous Rectifier Circuit V. Principles of Steady-voltage Loop 5.1 Schematic Diagram of Feedback Circuit 5.2 Working Principles VI. Short Circuit Protection Circuits 6.1 Current-limiting Circuit 6.2 Short Circuit Protection for Low-power Circuit 6.3 Short Circuit Protection for Medium-power Circuit 6.4  Common Current-limiting, Short-circuit Protection Circuit 6.5 Current Transformer Sampling Current Protection Circuit VII. Output Current Limiting Protection VIII. Output Overvoltage Protection Circuits 8.1 SCR Trigger Protection Circuit 8.2 Optocoupler Protection Circuit 8.3 Output Voltage Limiting Protection Circuit 8.4 Output Overvoltage Lockout Circuit IX. Power Factor Correction Circuit (PFC) 9.1 Schematic Diagram of PFC Circuit 9.2 The Working Principles X. Input Under-voltage and Overvoltage Protection 10.1 Schematic Diagram 10.2 The Working Principles FAQ       I. Circuit Arrangement of Switching Power Supply   The main circuit of the switch-mode power supply is composed of an input EMI filter, rectifier filter circuit, power conversion circuit, and PWM controller circuit, output rectifier filter circuit. The auxiliary circuits include the input & output Undervoltage protection circuit, the output overcurrent protection circuit, the output short circuit protection circuit, and so on.   The block diagram of switching power supply circuit arrangement is as follows:   FIG.1 Block diagram of switching power supply circuit arrangement   II. The Principle of the Input Circuit and the Common Circuits   2.1 Principle of AC Input Rectifier Filter Circuit 2.1.1    Lightning Protection Circuit When there is a lightning strike, the circuit composed of MOV1, MOV2, MOV3, F1, F2, F3, and FDG1 is used to provide protection against the resulting high voltage introduced into the power supply through the electrical grid.   When the voltage applied to the two ends of the piezoresistor exceeds its operating voltage, the resistance value will decrease, making the high voltage energy be consumed on the piezoresistor; if the current is too large, the F1, F2, and F3 will burn out to protect the following circuits. 2.1.2     Input Filter Circuit The double Pi filter network composed of C1, L1, C2 and C3 is mainly used to suppress the electromagnetic noise and clutter signal of the input power supply to prevent its interference to the power supply, and also to prevent the interference of the high-frequency clutters generated by the power supply itself to the electrical grid. The C5 will start to be charged when the power is turned on, producing a large instantaneous current, which is called surge current, but with an RT1 (thermistor) it can be effectively prevented. Because the instantaneous energy is all consumed on the RT1, after a certain time the resistance of RT1 will decrease as the temperature rises (RT1 is a negative temperature coefficient device) and the energy consumed by RT1 will be very small at this time, to make sure the following circuits work normally.     2.1.3   Rectifier Filter Circuit After the AC voltage is rectified by BRG1 and filtered by C5, a purer DC voltage can be obtained. If the C5 capacity becomes smaller, the output AC ripples increase with it.     2.2 Principle of DC Input Filter Circuit FIG.3 The schematic of rectifier circuit   2.2.1   Input Filter Circuit The double Pi filter network composed of C1, L1and C2 is mainly used to suppress the electromagnetic noise and clutter signal of the input power supply to prevent its interference to the power supply, and also to prevent the interference of the high-frequency clutters generated by the power supply itself to the electrical grid. C3 and C4 are Safety Capacitors and the L2, L3 are Differential Mode Inductors.   2.2.2   The Anti-surge Circuit This anti-surge circuit is composed of R1, R2, R3, Z1, C6, Q1, Z2,  R4, R5, Q2, RT1 and C7. At the instant of switch-on, Q2 does not conduct due to the presence of C6, and the current forms a loop through the RT1. Q2 turns on when the voltage on C6 is charged to Z1's steady voltage value. If C8 leaks or the following circuits are short-circuited, the voltage drop generated by the instantaneous current at the instant of switch-on on RT1 causes the Q1 conducted, so that Q2 does not have a gate voltage and does not conduct, making the RT1 burnt out in a very short time to protect the following circuits.   III. Power Conversion Circuits   3.1   The Working Principle of MOS Tube At present, the most widely used insulated gate FET is MOSFET, which uses the electroacoustic effect that occurs on the semiconductor surface to work, making it also known as surface field effect transistor. Because its gate is in a nonconducting state, the input resistance can be greatly increased up to 105 ohms. The MOSFET uses the gate-source voltage to change the amount of charge induced on the semiconductor surface to control the drain current.   3.2   Common Schematic Diagram FIG.4 Schematic of power conversion circuit    3.3  Working Principle The buffer composed of R4, C3, R5, R6, C4, D1, and D2 are connected in parallel with the MOS transistor switches, so that the voltage stress of the switch transistor and EMI are reduced, without secondary breakdown occurring. When the switch Q1 is turned off, the primary coil of the transformer is prone to generate peak voltages and spike currents. These components are combined to absorb the peak voltage and current well. The peak current signal measured from R3 participates in the duty cycle control of the current operating cycle and is therefore the current limit of the current operating cycle. When the voltage on R5 reaches 1V, the UC3842 stops working and switch Q1 turns off immediately.   The junction capacitances CGS and CGD in R1 and Q1 together form an RC network. The charge and discharge of the capacitor directly affects the switching speed of the switch. If R1 is too small, it will cause oscillation and electromagnetic interference will be great. If R1 is too large, the switching speed of the switching tube will be reduced. Z1 usually limits the GS voltage of the MOS transistor to less than 18V, thus protecting the MOS transistor.   The gate-controlled voltage of Q1 is a saw wave. The larger the duty cycle is, the longer the Q1 conduction time is, the more energy the transformer stores. When Q1 is turned off, the transformer releases energy through D1, D2, R5, R4, and C3 and at the same time, it also achieves the goal of resetting the magnetic field, which prepares the transformer for the next storage and transfer of energy. According to the output voltage and current, the IC adjusts the duty cycle of 6-pin sawtooth wave, thus stabilizing the output current and voltage of the complete machine.   C4 and R6 are voltage surge absorption loops.   3.4  Push-pull Power Conversion Circuit Fig.5 Schematic diagram of push-pull power conversion circuit Q1 and Q2 will be turned on in turn.   3.5  Power Conversion Circuit with Transformer Driver FIG.6 Schematic diagram of power conversion circuit with transformer driver T2 is the transformer driver, T1 is the switch-mode transformer, TR1 is the current loop .   IV. Output Rectifier Filter Circuit   4.1   Forward Rectifier Circuit FIG.7 Schematic diagram of forward rectifier circuit T1 is a switch-mode transformer, its primary and secondary sides are in a same phase. D1 is a rectifier diode, D2 is a flyback diode and R1, C1, R2 and C2 form a despiker circuit. L1 is a freewheeling inductor and C4, L2, and C5 form a π filter.   4.2  Flyback Fectifier Circuit FIG.8 Schematic diagram of flyback fectifier circuit T1 is a switch-mode transformer, and the primary and secondary sides are opposite. D1 is a rectifier diode, and R1 and C1 form a despiker circuit. L1 is a a freewheeling inductor, R2 is adummy load and C4, L2 and C5 form a π type filter.   4.3   Synchronous Rectifier Circuit FIG.9 Schematic diagram of synchronous rectifier circuit Working principle: When the upper end of the secondary winding of transformer is positive, the current through C2, R5, R6 and R7 makes Q2 turned on and form a loop. Q2 is the rectifier and the Q1 gate is turned off due tothe reverse bias. When the lower end of second wingding is positive, the current through C3, N4 and R2 makes Q1 conducted as a freewheeling diode. The Q2 gate is turned off due to the reverse bias. L2 is a freewheeling inductor, C6, L1 and C7 form a π filter and R1, C1, R9 and C4 form a despiker circuit.   V.  Principles of Steady-voltage Loop   5.1  Schematic Diagram of Feedback Circuit FIG.10 Schematic diagram of feedback circuit 5.2  Working Principles When the output U0 is increased, the voltage of pin 3 of U1 chip is increased either after dividing voltage with these sampling resistors R7, R8, R10 and VR1, until exceeding the reference voltage of pin 2 of U1 chip, it begins to output a high level, turning the Q1 and photoelectric triode on, and lighting the optocoupler OT1 and LED. Accordingly, the potential of pin 1 of UC3842 becomes lower and therefore decreases the duty cycle of pin 6 of U1 chip and U0.    On the contrary, when the output U0 is decreased, the voltage of pin 3 of U1 chip is decreased either until it exceeds the reference voltage of pin 2 of U1 chip, it begins to output a low level, Q1 and photoelectric triode are not conducting, and optocoupler OT1 and LED do not shine. Accordingly, the potential of pin 1 of UC3842 becomes higher and therefore increases the duty cycle of pin 6 of U1 chip and U0. Repeatedly, so that the output voltage remains stable. Regulating VR1 can change the output voltage.   Feedback loop is an important circuit that affects the stability of switching power supply. If the feedback resistors and capacitors are wrong, missed or false soldered, self-excited oscillations will occur, resulting in fault phenomena, such as abnormal waveforms, oscillations within empty or full load condition and unstable output voltage.   VI. Short Circuit Protection Circuits   6.1  Current-limiting Circuit In the case of short circuit at the output end, PWM control circuit can limit the output current within a safe range. There are many ways to  realize the current limiting. When the current limiting circuit does not work in short circuit, all we can do is to add additional circuits.   6.2  Short Circuit Protection for Low-power Circuit FIG.11 Schematic diagram of low-power short-circuit protection circuit When the output circuit is shorted, the output voltage disappears, the optocoupler OT1 does not turn on, the voltage of pin 1 of UC3842 rises to about 5V, and the partial voltages of R1 and R2 exceed the TL431 reference, making it conductive, the VCC potential of pin 7 of UC3842 is pulled down, and the IC stops operating. After UC3842 stopped working, the potential of pin 1 disappeared, TL431 did not conduct, and the potential of UC38427 increased, making UC3842 restart, and go round and begin again, until the short-circuit phenomenon disappears, then the circuit automatically returns to normal operation.   6.3  Short Circuit Protection for Medium-power Circuit FIG.12 Schematic diagram of medium-power short-circuit protection circuit When the output is short-circuited, the voltage of pin of UC3842 rises. When the potential of pin 3 of U1 chip is higher than that of pin 2, the comparator inverts the output high level of pin 1 to charge C1. When the voltage across C1 exceeds the pin 5 reference voltage, the pin 7 of U1 chip outputs low level. The voltage of pin 1 of UC3842 begins to be lower than 1V and UC3842 stops working, making the output voltage be zero, and go round and begin again, until the short-circuit phenomenon disappears, and the circuit begins to work normally. R2 and C1 are charge and discharge time constants respectively, and the short circuit protection will not work if the resistance is not correct.   6.4  Common Current-limiting, Short-circuit Protection Circuit FIG.13 Schematic diagram of protection circuit 1 When the output circuit is short-circuited or overcurrent, the primary current of the transformer increases, the voltage drop across R3 increases, the voltage at pin 3 increases, and the duty cycle of pin 6 of UC3842 increases. When the voltage at pin 3 exceeds 1V, the UC3842 turns off and without output.   6.5  Current Transformer Sampling Current Protection Circuit The current transformer sampling current protection circuit which has low power consumption but high cost, and the circuit is often complicated. FIG.14 Schematic diagram of protection circuit 2 The larger the output current is (the extreme case refers to short circuit), the higher the voltage sensed by the TR1 secondary coil. When the voltage of pin 3 of UC3842 exceeds 1 volt, the UC3842 stops working. Go round and begin again, until the short-circuit or overload disappears, the circuit recovers itself.   VII. Output Current Limiting Protection FIG.15 Schematic diagram of protection circuit 3 The above is a common output current limiting protection circuit, and its working principle is as follows:   When the output current is too high, the voltage across the RS (manganese copper wire) rises, the voltage of pin 3 of the U1 chip is higher than the reference voltage of pin 2. Pin 1 of the U1 chip outputs a high voltage, which makes Q1 turned on, and the optoelectronic effect occurs on the optocoupler, the voltage of pin 1 of UC3842 is reduced, together with the output voltage, to achieve the goal of overload protection or current limiting.     VIII. Output Overvoltage Protection Circuits   The role of the output overvoltage protection circuit is to limit the output voltage to a safe value when the output voltage exceeds the design value.    When an internal voltage regulator loop of a switching power supply fails or an overvoltage occurs due to a user's improper operation, an overvoltage protection circuit is used to protect against damage to downstream electrical equipment.   The most commonly used overvoltage protection circuits are as follows:   8.1  SCR Trigger Protection Circuit FIG.16 Schematic diagram of protection circuit 4 As shown above, when the output of Uo1 rises, the Zener diode (Z3) breaks down and it is pulled into conduction, letting the control terminal of the Silicon Controlled Rectifier reach the trigger voltage, so the SCR turns on and the Uo2 is shorted to ground. Then the overcurrent or short circuit protection circuit will work and stop the operation of the entire power supply circuit. When the overvoltage condition on the output terminals is eliminated, the trigger voltage of the control terminal of the thyristor is discharged to the ground through R, and the thyristor returns to the off state.   8.2  Optocoupler Protection Circuit FIG.17 Schematic diagram of protection circuit 5A FIG.18 Schematic diagram of protection circuit 5B As shown in the above figure, when an phenomenon of overvoltage occurs in the Uo, the Zener breaks down and conducts current through the optocoupler (OT2) and R6 to the ground, lightening the light-emitting diode of the photocoupler, which causes the phototransistor of the photocoupler to conduct. The base of Q1 is turned on and the voltage of pin 3 of UC3842 is reduced, turning off the IC and the entire power supply while Uo is zero, and go round and begin again.   8.3  Output Voltage Limiting Protection Circuit FIG.19 Schematic diagram of protection circuit 6 The output voltage limiting protection circuit is shown in the diagram. When the output voltage rises, zener and optocoupler are on, and the base of Q1 turns on either due to a driving voltage according. The voltage of pin 3 of UC3842 rises and the output drops. When the zener is not conducting, the voltage of pin 3 of UC3842 drops and the output voltage rises. As time goes by, the output voltage will be stable within a range (depending on the zener's value).   8.4  Output Overvoltage Lockout Circuit FIG.20 Output overvoltage lockout circuit A FIG.21 Output overvoltage lockout circuit B The working principle is shown in Figure A is that when the output voltage Uo rises, the Zener and optocoupler turn on, and then go with the base of Q2, because of which the base of Q1 is on due to the drop of voltage.   Q2 is on all the time after the voltage of Vcc is through R1, Q1, and R2, making the pin 3 of UC3842 always be conducted with high level and therefore stop working.   In Figure B, the voltage of pin 3 of the U1 chip raises due to big rises of Uo, and pin 1 outputs a high level. Because of the presences of D1 and R1, the pin 1 of U1 chip is always on and outputs a high level, so it is always low and then it stops working. Is it positive feedback?     IX. Power Factor Correction Circuit (PFC)   9.1 Schematic Diagram of PFC Circuit FIG.22 Schematic diagram of PFC circuit 9.2  The Working Principles The input voltage is rectified by an EMI filter composed of L1, L2, L3, and so on and a BRG1, one part of which is then fed into the PFC inductor and another part of which is fed into the PFC controller as the sampling of the input voltage to adjust the duty cycle of the control signal before divided by R1 and R2, that is to change them on and off time of Q1 and to stabilize the output voltage of PFC.   L4 is a PFC inductor that stores energy when Q1 is on and releases energy when Q1 is switched off. D1 is the start diode. D2 is the PFC rectifier diode, and C6, C7 are filtered. One part of the PFC voltage is sent to the downstream circuit, and another part of it is fed into the PFC controller as the sampling of the output voltage before divided by R3 and R4, to adjust the duty cycle of the control signal and to stabilize the output voltage of PFC.     X. Input Under-voltage and Overvoltage Protection   10.1  Schematic Diagram FIG.23 Schematic diagram of input undervoltage and overvoltage protection circuit   10.2  The Working Principles The input under-voltage and overvoltage protection principles of the switching power supply of AC input and DC input are almost the same. The sampling voltages of the protection circuits all come from the same input filtered voltage.   The sampling voltage is divided into two ways, one way is fed into pin 3 of the comparator after divided by R1, R2, R3, and R4. If the sampling voltage is higher than the reference voltage of pin 2, then pin 1 of the comparator will output a high level to control the main controller and make the main controller turned off, so there is no power output. The other way is fed into pin 6 of the comparator before it is divided by R7, R8, R9, and R10.   If the sampling voltage is lower than the reference voltage of pin 5, then pin 7 of the comparator will output a high level to control the main controller and make it turned off, so there is no power output.   How To Make a Switching Power Supply     FAQ   1. What are the 3 types of power supply? There are three subsets of regulated power supplies: linear, switched, and battery-based. Of the three basic regulated power supply designs, linear is the least complicated system, but switched and battery power have their advantages.   2. What is meant by switch mode power supply? A switch mode power supply is a power converter that utilises switching devices such as MOSFETs that continuously turn on and off at high frequency; and energy storage devices such as the capacitors and inductors to supply power during the non-conduction state of the switching device.   3.What are the advantages and disadvantages of switch mode power supply? Advantages & disadvantages of switch mode power supply (SMPS) a. The switch mode power supply has a smaller in size. b. The SMPS has light weight. c. It has a better power efficiency typically 60 to 70 percent. d. It has a strong anti interference. e. SMPS has wide output range. f. Low heat generation in SMPS.   4. What is a DC switching power supply? A Switching DC power supply (also known as switch mode power supply) regulates the output voltage through a process called pulse width modulation (PWM). The PWM process generates some high frequency noise, but enables the switching power supplies to be built with very high power efficiency and small form factor.   5. What is the difference between a switching power supply and a linear power supply? Linear power supplies deliver DC by passing the primary AC voltage through a transformer and then filtering it to remove the AC component. Switching power supplies feature higher efficiencies, lighter weight, longer hold up times, and the ability to handle wider input voltage ranges.   6. Do I need a switching power supply? The switching power supply implies higher efficiency due to the high switching frequency, enabling it to use a smaller, less-costly high-frequency transformer as well as lighter, less-costly filter components. Switching power supplies contain more overall components, therefore are usually more expensive.   7. Is a switching power supply regulated? A switch mode power supply regulates an output voltage with pulse width modulation (PWM). This process creates high-frequency noise but it provides a high-efficiency rating in a small form factor. ... The low DC voltage is finally converted into a steady DC output with another set of diodes, capacitors, and inductors.   8. How do I know if my power supply is regulated? You can generally stick one probe into the middle of the connector, and hold the other against the outside. With a few exceptions, the middle is positive, so use the red lead there, and use the black lead on the outside shell. Regulated supplies, without any load, should measure very close to the target voltage of 12v.   9. Can I use a switching power supply to drive a DC motor?   A simple unregulated analog power supply may be easier and be able to supply the large starting under load current more that the switching one. DC motors are not too fussy about the supply, and will usually run quite well on unfiltered DC.   10. Are switch mode power supplies any good? Switch mode power supplies, SMPS provide improved efficiency & space saving over traditional linear supplies, but care has to be taken to ensure noise on the output is low. Switch mode power supplies are widely used because of the advantages they offer in terms of size, weight, cost, efficiency and overall performance.   You May Also Like: Transformers Basics: Construction, Types, Materials and Design Modeling and Control of Full Bridge Push-Pull Bi-Directional DC/DC Converter Review and Application of Electronic skin How to Drive Thermostat by Using Solid State Relay

Warm hints: The word in this article is about 3000 words and  reading time is about 10 minutes.   The transformer is a static electrical device, mainly composed of an iron core (or magnetic core) and coil. The coils have two or more windings, of which the ones connected to the power are called primary coils, and the rest are called secondary coils. Transformers are widely used in electrical equipment such as household appliances, electronic equipment, switching power supply, and so on. Circuit symbols commonly used T as the beginning of the number, for example, T01, T201.    This article covers the construction, functions, classification, and design of transformers and materials used for building magnetic cores in transformers.     Catalogs   I. The Composition of Transformer II. The Construction and Functions of Transformer III. High-frequency Transformer Design Program 3.1 Program structure 3.2 Matters needing attention when doing the core material   selection 3.3 Ferrite magnetic material requirements IV. Power Transformer Classification V. Principle and method of Transformer Design FAQ   I. The Composition of Transformer 1）The primary side 2）The secondary side 3）Magnetizing inductance 4）Leakage inductance 5）Open-circuit or short-circuit measurement of the primary side leads to the  Magnetic inductance and the leakage inductance turns ratio respectively:  K=Np/Ns=V1/V2   II. The Construction and Functions of Transformer 1) Electrical isolation 2) Energy storage 3) Voltage change for same power input.   III. High-frequency Transformer Design Program   3.1 Program structure (1) Core material (2) Core structure (3) Core parameters (4) Transformer Winding Parameter (5) package assembly (6) Temperature rise check   (1) Core material Soft magnetic ferrite is widely used in switching power supply because of its own characteristics. It has the advantages of high resistivity, low AC eddy current losses, low price, and easy to be machined into magnetic cores of various shapes. The disadvantages are low working magnetic flux density, low permeability, large magnetostriction, and high sensitivity to temperature changes. Which kind of soft magnetic ferrite material can satisfy the design requirement of a high-frequency transformer more fully, only when it is carefully considered and the transformer design can reach the high-cost performance.   (2) Magnetic core structure The factors considered in the selection of magnetic core structure are as follows: reducing magnetic leakage and leakage inductance, increasing the area of coil heat dissipation, which is beneficial for shielding and makes it easier to wind coils, more convenient to wire for assembly and so on.   The magnetic leakage and leakage inductance are directly related to the magnetic core structure . If the magnetic core does not need air gap, then a enclosed ring-like or square type magnetic core may be used as far as possible.   (3) Magnetic core parameters In the design of core parameters, special attention should be paid to the operating flux density only limited by the magnetization curve, but also by the losses, and also related to the working mode of power transmission. When the flux changes in one direction, there is ΔB=Bs-Br, which is not only limited by the saturation flux density but also mainly by the losses (Losses cause temperature rise, which in turn affects magnetic flux density). The operating flux density Bm=0.6～0.7ΔB.   An air gap can decrease Br and therefore increase the flux density ΔB. The exciting current can be increased after using an air gap opening, but the core volume can be decreased either. For the two-way operation of magnetic flux, the flux density ΔB is twice the maximum operating flux density Bm, that is ΔB=2Bm. In bidirectional operating mode, we should pay attention to the problem of transformer DC magnetic bias due to the inequality of volt-second areas of positive and negative excitation variation, which is caused by different reasons. A small air gap will be needed in the core, or a DC capacitor can also be added to the circuit design.   Magnetic properties of ferromagnetic materials Magnetic hysteresis loops of the core   (4) Coil parameters Coil parameters include: turns, conductor section (diameter), wire form, winding arrangement and insulation. The conductor section (diameter) depends on the current density of winding, using taking 2.5～4A/mm2. When doing some choosing of section conductor diameter don’t forget to take the skin effect into consideration and do regulations necessary after some temperature rise tests of the transformer.   General winding arrangements: the primary winding is close to the core and the secondary windings & feedback windings are gradually arranged outward. The following two winding arrangements are recommended:   1) If the voltage of the original windings is high (for example, 220V) and meanwhile that of the secondary windings is low, a more appropriate arrangement is the secondary winding being close to the core, and then goes the feedback winding, the original winding is arranged on the outermost ends, which is advantageous to the insulation arrangement of the original winding to the core;   2) If we want to increase the coupling between the primary and secondary windings, we can make half of the original windings be close to the core, then goes the feedback winding and secondary winding, and the other half of the original winding being the outermost ends, which is an arrangement advantageous to reduce the leakage inductance.   (5) Assembly structure The assembly structure of high-frequency power transformers are divided into horizontal and vertical types. If you'd like to select the planar core, sheet magnetic core and thin-film magnetic core, then a horizontal-type assembly would do you good.   (6) Temperature rise tests The temperature rise tests can be carried out by calculation and sample test. The temperature rise is lower than the allowable temperature rise above 15 degrees, the current density and the cross-section of the wire are appropriately increased. Appropriately increase the current density and decrease the cross-section of the wire, and do the exact opposite if temperature rise exceeds the allowable value, such as increasing the diameter or enlarging the core if necessary, to increase the area of coil heat dissipation.       3.2 Matters needing attention when doing the core material selection (1) Soft ferrite, due to its low price, good adaptability, and high performance at high frequency, has been widely used in switching power supply.   (2) Soft ferrite is commonly divided into two series: Mn-Zn ferrite and Ni-Zn ferrite. The Mn-Zn ferrite is composed of Fe2O3，MnCO3，ZnO and so on, which is widely used in all kinds of filters, inductors, transformers, and so on below 1MHz. The Ni-Zn ferrite is composed of Fe2O3，NiO，ZnO and so on, which is widely used in all kinds of adjustable inductor windings, anti-jamming magnetic beads, antenna matching devices, and so on above 1MHz.    (3) Mn-Zn ferrite is the most widely used core in switching power supply, and the selection of its material depends on its use. The core for the input filter part of the power supply is mostly high-conductivity magnetic core, and its material number mostly is R4K～R10K, that is, the ferrite core of relative permeability is about 4000~10000, but the main transformer and output filter are magnetic materials with high saturation flux density, where Bs is about 0.5T (5000GS).     3.3 Ferrite magnetic material requirements   Ferrite magnetic materials for switching power supply shall meet the following requirements:   (1) High saturation flux density Bs and low residual flux density Br   The residual flux density Bs has a certain influence on the transformer and winding results. Theoretically speaking, the number of turns of transformer windings can be reduced and the copper loss can be reduced because of the high Bs. In practical applications, there are different types of circuits of high-frequency converters in switching power supply.    For transformers, their operations can be divided into two categories:   1) Bipolar: The circuit topologies include half-bridge, full-bridge, push-pull, etc. In the primary winding of the transformer, the excitation current is equal and opposite in direction during the positive and negative half-cycles. Therefore, the magnetic flux changes in the magnetic core of the transformer are symmetrically moved up and down. The maximum variation range of B is  ΔB=2Bm, and the DC component of the magnetic core is basically canceling out.   2) Unipolar: The circuit topologies include single-ended forward, single-ended flyback, etc. The transformer primary winding adds a unidirectional square wave pulse voltage in one cycle (this is the case for single-ended flyback). The magnetic flux density varies from the maximum Bm to the residual flux density Br in the unidirectional-excitation transformer core. If we decrease the Br and increase the saturation flux density Bs, then the △B will be increased, and the turns and copper loss will also be reduced.   (2) Transformers or inductors are divided into three categories according to their topology:   1) An DC-filter inductor's magnetic core only works in one quadrant, the topologies of this operating state including Boost, Buck, buck/boost inductors, single end flyback converter transformer, forward and all push-pull converters and output filter inductors.   2) The core of the transformer in the forward converter also works in one quadrant, but the transformer needs to magnetic reset.   3) The core of the transformer with push-pull topology is in bidirectional alternating magnetization. These kinds of converters include push-pull, half-bridge and full-bridge converters, AC filter inductors, and so on.   (3) Low power loss at high frequency   The power loss of ferrite not only affects the power output efficiency but also leads to the heating of the magnetic core and waveform distortion.   The heating problem of the transformer is very common in practical applications, which is mainly caused by copper loss and core loss of the transformer. If the selected Bm is too low and the turns of winding are too many, it will cause the winding to heat up and transfer the heat to the core at the same time, and vice versa.   When selecting the ferrite material, we must make the power loss change with temperature characterized by a negative temperature coefficient. This is because if the core loss is the main heating, making the transformer temperature rise up, which then will lead to a further increase of core losses, thus it will form a vicious circle and eventually make the power tube, transformer, and other components burn down. Therefore, in the researches of power ferrite at home and abroad, we must solve the problem of negative temperature coefficient of magnetic material power loss itself, which is also a remarkable feature of magnetic materials having met the requirements for power supply applications, such as PC40 from Japanese company TDK and R2KB from China manufacturers and so on.   (4) A relatively moderate permeability   (5) How we choose the appropriate relative permeability?    Well, this depends on the switching frequency of your actual circuit, mostly 2000, meanwhile its applicable frequency must be below 300kHz, and sometimes can be a little higher, but the maximum will not be higher than 500 kHz.   (6) A relatively high Curie temperature   Curie temperature is the temperature at which a magnetic material loses its magnetic properties, generally above 200 ℃. However, the actual operating temperature of the transformer should not be higher than 80℃, at which the saturation flux density Bs will drop to 70% of that at the normal temperature when the temperature is above 100℃. That is, the saturation flux density of the core will drop more seriously when the operating temperature is too high. Furthermore, when the temperature is higher than 100℃, the power loss has been experiencing a positive temperature coefficient, which will lead to a vicious circle. For R2KB2 materials, the temperature corresponding to the allowable power consumption has reached 110℃ and the Curie temperature is up to 240℃, which meets the requirements of high-temperature use.     IV. Power Transformer Classification Power transformers are divided into three categories according to their topology: (1) Flyback transformers; (2) Forward transformers; (3) Push-pull transformers (full-bridge/half-bridge converters)   The appropriate topologies for various core structures are shown in the following table:   Core structureTypes of converter circuitFlybackForwardPush-pullE cores++0Planar E Cores-+0EFD Cores-++ETD Cores0++ER Cores0++U Cores+00RM Cores0+0EP Cores-+0P Cores-+0Ring Cores-++    "+"=fit; "0"=normal; "-"=unfit Summary of High frequency transformer core.XLS V. Principle and Method of Transformer Design   (1) There are two main ways to design transformer: Area Product (AP) Method AP: The product of core effective cross section Ae and Area of window Aw PT-The calculation power of the transformer Ae-Core effective cross section Aw- Area of window Ko-Core window utilization coefficient, typically 0.4 Kf-Waveform coefficient, usually square wave being 4 and sine wave being 4.44 Bw-The operating magnetic intensity of core FS-Switching frequency Kj-Current density coefficient, usually 395A/cm2 X-Core structure coefficient     (2) According to the area product (AP) method, the general steps of designing transformer are as follows: 1. Select the core material to calculate the apparent power of the transformer; 2. Determine the core cross section AP and select the core size according to AP value; 3. Calculation of the primary side inductance and the number of turns; 4. Calculation of the length of air gap; 5. Calculating the line diameter according to the current density and the secondary side RMS current. 6. Determine whether the copper loss and iron loss meet the requirements (eg allowable loss and temperature rise)   Selecting the flyback topology, the basic parameters of the power supply are as follows: Input voltage: 175-264 VAC Output voltage: 21V Output current: 3A Output power P0=63W Frequency set at 60Khz Duty cycle set at 0.45 initially   1) Select the core material to determine the apparent power PT of the transformer   and select the PC40 material here considering the cost factor and check the PC40 data to get Bs=0.39T, Br=0.06T. In order to prevent the core from becoming saturated instantly, a certain margin is reserved. Let Bm= ΔBmax*0.6=0.198T, and pick up the 0.2T. For flyback topology, the transformer apparent power PT is:   2) Calculating AP values with Excel tables   Where, J is the current density, usually 395A/cm2, and Ku is the effective use coefficient of copper window, usually 0.2～0.4, now we set Ku as 0.4.    Based on the figure above, we select the core EE3528 due to its being greater than the calculated AP value, with the following parameters: Ae: 84.8mm2 AP：1.3398cm4 Wa：158mm2 AL：2600nH/H2 In order to adapt to the abrupt load current, the power supply is designed in critical mode and the critical current is: I0B=0.8×I0=2.4A     3) Calculation of the primary side inductance and the number of turns (A) Minimum input voltage Vimin=ViACmin*1.2=210V (B) Turns ratio n=[Vimin/(V0+Vf)]*[Dmax/(1-Dmax)] n=[210V/(21V+1V)*[0.45/(1-0.45)] n=7.8 (C) Peak secondary current ^IsB=2*IoB/(1-Dmax) ^IsB=2*2.4A/(1-0.45) ^IsB=8.72A (D) Secondary inductance Ls=(V0+Vf)*(1-Dmax)*[1/(Fs*1000)]/^IsB*1000000 Ls=(21V+1V)*(1-0.45)*[1/(60Khz*1000)]/8.72A*1000000 Ls=23.58Uh (E) Primary inductance Lp=n*n*Ls Lp=7.8*7.8*23.58uH Lp=1434uH   Primary and secondary peak currents (F) Calculation of peak secondary current in continuous mode ^Isp=Io/(1-Dmax)+(^IsB/2) ^Isp=3A/(1-0.45)+(8.72A/2) ^Isp=9.81A (G) Calculation of peak primary current in continuous mode ^Ipp=^Isp/n ^Ipp=9.8A/7.8 ^Ipp=1.257A (H) Calculating the turns of the primary and secondary auxiliary windings a) Number of turns in the primary side Np=Lp*^Ipp/(^B*Ae) Np=1434uH*1.257A/(0.2*84.8) Np=106.28T After rounding: Np=106T b) Number of turns in the secondary side Ns=Np/n Ns=106T/7.8 Ns=13.58T After rounding: Ns=14T c) Number of feedback turns Nv=(Vcc+Vf)/[(V0+Vf)/Ns] Nv=(14.5V+1V)/[(21V+1V)/14T] Nv=9.87T After rounding: Nv=10T   To avoid core saturation, an appropriate air gap is added to the magnetic loop, the calculation go as follows: The number of turns may need to be corrected by the air-gap flux edge effect.   4) There are two ways to calculate the wire diameters of the primary, secondary and auxiliary windings: Effective current of original side diameter: Iprms=Po/^n/Vimin Iprms=63W/0.8/210V Iprms=0.375A (A) Calculating the area of bare wire (B) Calculating the wire diameter (current density J to take 4A/mm2) Using two 0.18mm-diameter wires wound around or AWG #28 a single strand The secondary diameter: Use four wires with a diameter of 0.25mm (AWG #31) and wind around. Calculation of Skin Depth: The diameter of multi-strand parallel winding must be less than or equal to dwH, in single wire winding, however, if the diameter exceeds the dWH value,  the multi-strand wire winding should be taken into account.   5) Calculation of copper loss Pcu and iron loss Pfe (total transformer loss Ploss) (A) Calculating the loss of primary and secondary windings.  Where, MLT is the average turn length of magnetic core (B) Calculating the allowable total loss Ploss and allowable iron loss at efficiency η (C) According to the loss curve of iron core, the actual loss (iron loss per unit weight and actual iron loss) is obtained by: The Ploss is the loss of the whole circuit, including diode/MOSFET losses and other losses, the actual losses Pfe must be much smaller than the calculated one, so here is only for reference. (D) Calculating the loss per unit area by Φ=Ploss/As If the temperature rise caused by Φ is less than 25 degrees, then the design is wonderful.   6) Calculating the BW The working flux density BW should be below Bs-Br within the design specifications, that is Bw<Bs-Br, to avoid saturation of the core.   FAQ   1. What is the use of transformer? Transformers are employed for widely varying purposes; e.g., to reduce the voltage of conventional power circuits to operate low-voltage devices, such as doorbells and toy electric trains, and to raise the voltage from electric generators so that electric power can be transmitted over long distances.   2. What are the 3 types of transformers? There are three primary types of voltage transformers (VT): electromagnetic, capacitor, and optical.   3. What is the basic principle of transformer? A transformer consists of two electrically isolated coils and operates on Faraday's principal of “mutual induction”, in which an EMF is induced in the transformers secondary coil by the magnetic flux generated by the voltages and currents flowing in the primary coil winding.   4. Does a transformer convert AC to DC? A transformer is built to transfer the energy from one circuit into another circuit by way of magnetic coupling. ... An alternating current creates a magnetic flux in the core on its way through the first winding, inducing the voltage in the others. It can convert high and low voltages, it cannot convert AC to DC.   5. What are the main parts of transformer? There are three basic parts of a transformer: a. an iron core which serves as a magnetic conductor, b. a primary winding or coil of wire and. c. a secondary winding or coil of wire.   6. What are the classification of transformer? Depending upon the type of construction used, the transformers are classified into two categories viz.: (i) Core type, and (ii) Shell type. Depending upon the type of service, in the field of power system, they are classified as: (i) Power transformers, and (ii) Distribution transformers.   7. Can a transformer work on DC? As mentioned before, transformers do not allow DC input to flow through. This is known as DC isolation. This is because a change in current cannot be generated by DC; meaning that there is no changing magnetic field to induce a voltage across the secondary component.   8. How do you convert a transformer? This conversion is made by winding two separate conductors around a common iron core. Applying an alternating voltage to the primary conductor produces current which sets up a magnetic field around itself. This is known as mutual inductance.   9. What are two components of no load current in transformer? The no-load current of a transformer consists of two components: The Magnetization Current iM is the current required to produce the flux in the transformer core. The Core-loss Current ih+e is the current required to make up for hysteresis and eddy current losses.   10. Which type of transformer core is most efficient? SHELL CORE. The most popular and efficient transformer core is the SHELL CORE, as illustrated in figure (4). As shown, each layer of the core consists of E- and I-shaped sections of metal. These sections are butted together to form the laminations.   You May Also Like: Analysis of Calculation Theory for Transformer Temperature Rise Some suggestions about protecting transformers Learn Some Basic Knowledge about Capacitor Voltage Transformer      

Maxim Integrated is a company specializing in semiconductor interface, digital signal processor, analog signal chain, communication IC, power supply and battery management, etc. In the past twenty years, Maxim has developed ICs with high reliability, working in the extended temperature range for industrial applications. Now, they also offer products with current and voltage protection, reducing the devices' demand for space and power consumption with excellent performance indicators. CatalogsI MAX7409 / MAX741O / MAX7413 / MAX7414II MAX847 / MAX769III MAXl674 / MAXl675 / MAXl676IV MAX3875V MAX2105VI MAX3690VII MAX4539 / MAX4540VIII MAX7400 / MAX7403IX MAXl710X MAX668 / MAX669XI MAX254BXIII MAX2663 / MAX2671 / MAX2673Intro Integrated circuits (ICs) are a keystone of modern electronics, in this article we will disguss some kinds of ICs in Maxim Integrated. They are the heart and brains of most circuits. They are the ubiquitous little black "chips" you find on just about every circuit board. Unless you’re some kind of crazy, analog electronics wizard, you're likely to have at least one IC in every electronics project you build, so it's important to understand them, inside and out.An IC is a collection of electronic components ——resistors, transistors, capacitors, etc. ——all stuffed into a tiny chip, and connected together to achieve a common goal. They come in all sorts of flavors: single-circuit logic gates, op amps, 555 timers, voltage regulators, motor controllers, microcontrollers, microprocessors, FPGAs…the list just goes on-and-on.Embedded computing is based on microcontroller design and provides fixed function operation control. Embedded computing originated from industrial control applications, and has been widely used in consumer electronics, medical treatment, and even communications. Maxim provides real-time clock, security authentication, interface IC and sensor solutions for these markets,which makes it an important supplier in the industry.  What is IC chip and how does an IC work I Space and power saving 5th order filter IC---MAX7409/MAX741O/MAX7413/MAX7414New 5th order Bessel, Butterworth Switched-Capacitor Low Pass Filters series products, uMAX-8 pins and DIP package. MAXIM's proprietary uMAX package, which is 80% smaller than the 8-pins DIP package, makes it the industry's smallest 5-order switched capacitor filter. MAX7409/MAX7410 works at +5V, MAX7413/MAX7414 works at +3V and both devices draw only 1.2mA of supply current. Low price, small size and low power consumption make this kind of filter extremely suitable for price sensitive portable devices requiring DAX post-filtering or anti-aliasing applications.The MAX7409/MAX7413 Bessel filters have the characteristics of low overshoot, fast establishment and linear phase response, and the MAX7410/MAX7414 Butterworth filters have the flatest band-pass response. The four kinds of chips are all fixed frequency response, and the design tasks of filter is simplified to selecting clock frequency.The angular frequency can be tuned from 1Hz to 15 kHz by the clock at a rate of 100 times the clock/rotation angle. Two modes of clock operation, one is a self-contained clock of an external capacitor, another is an external clock which could strictly control the cut-off frequency. They have a very low output misalignment (±4 mV) and can be further regulated via an offset adjustment pin. Figure 1. Typical application circuit of MAX7409/MAX741O/MAX7413/MAX7414 II Power management ICs for communication equipment---MAX847/MAX769The MAX847/MAX769 DC-DC converter produced by MAXIM Company of USA has the characteristics of low voltage operation, high conversion efficiency and synchronous rectification. It is suitable for the low power digital radio communication system with 1 to 3 batteries, such as two-way paging, GPS receiver and so on, ensuring the cut-in voltage is as low as 0.87V and the quiescent current is 37 μA (the outage current is 2 μA).The built-in synchronous rectifier eliminates the external Schottky diode, meanwhile the conversion efficiency is increased to 90% , and for MAX847, an output current exceeding 50mA may be provided when power is supplied with a single battery. When two batteries are supplied, the MAX769 with function of boost/buck conversion could provide an output current over 90mA. Both chips can digitally adjust the output voltage through a serial interface compatible with SPI, which ranges from 1.8 V to 4.9 V whit an adjustable interval of 100 mV. The no-load current is only 13 μA.The MAX769 is similar to the MAX847 except that it contains a buck/boost DC-DC converter (for 2-cell or 3-cell inputs) rather than a boost-only converter (for 1-cell inputs). Both MAX847 and MAX769 include a multichannel ADC for battery monitoring. Three low noise Linear Regulator outputs for various uses (3V analog, 2.85V logic, and 1V receiver.  Both chips are 28-pin QSOP packaged. Figure 2. Typical application circuit of MAX847 Figure 3. Typical application circuit of MAX769 III Compact and efficient DC-DC converter IC with very low power supply current---MAXl674/MAXl675/MAXl676The MAX1674/MAX1675/MAX1676 DC-DC converter chip can provide up to 94% conversion efficiency. They available in small 8 or 10-pin uMAX package, and the static current is only 16 μA. The built-in synchronous rectifier not only improves efficiency but also eliminates the using of  external Schottky diodes, resulting in smaller dimensions and lower costs.The MAX1674 has a current-limiting of 1A, and the MAX1675 has a current-limiting of 0.5A, allowing the use of very small inductors. The MAX1676 has an optional current-limiting and minimizes the EMI due to an elimination of inductive oscillations. All chips have built-in N channel MOSFET with 0.3Ω and with a pin-selectable output voltage of 3.3V or 5V. The output voltage can also be adjusted in the range of 2 V to 5.5 V using the divider resistance. The input voltage ranges from 0.7 V to VOUT and the cut-in voltage can be as low as 1.1 V. Other features include: efficiency up to 94% when the output current is 200mA, built-in low voltage detection and 0.1 μA shutdown mode. IV Clock recovery and data retiming IC---MAX3875MAX3875 is a compact, low power clock recovery and data retiming chip for 2.488GbpsSDH／SONET systems. The fully integrated PLL can extract the synchronous clock from the serial NRZ input data which is retimed by the recovery clock. The clock and data output of the chip are compatible with the differential PECL and the additional 2.488Gbps serial input is used for loopback test of the system. It can also provide unlock monitoring signal of a TTL level.MAX3875 can be used as regenerator or terminal receiver in 0C-48／STM-16 transmission system. Insert jitter characteristics are higher than any SONET/SDH specification. The single supply is from 3.3V to 5V and when power is 3.3V, the power loss is less than 400mW in the full temperature range from -40 ℃ to 85 ℃.MAX3875 is available in 32-pin TQFP package.Figure 4. Typical application circuit of MAX3875 V Digital DBS direct-conversion tuner IC---MAX2105It is designed for the application of Direct Broadcast Satellite (DBS) TV set-top box. Compared with the structure based on intermediate frequency, the cost of the system is greatly reduced because of the use of direct frequency conversion structure. MAX2105 is supplied by a single power supply of 5V and the input signal frequency ranges from 950MHz to 2150MHz, tuned directly from L band to baseband by broadband I/Q down converter.The MAX2105 internal circuit includes a low noise amplifier with AGC, two down conversion mixers, an oscillating buffer with a 90° orthogonal generator, a prescaler and a baseband amplifier. The range of AGC gain adjustment is 41 dB, and the minimum power of input signal is -60 dB. Since the range of AGC gain adjustment is reduced, MAX2105 can use high gain external LNAs to obtain better noise coefficient, and can also provide a automatic baseband drift correction.MAX2105 is available in 28-pin SO package.Figure 5. Typical application circuit of MAX2105 VI SDH/SONET 8:1 serializer with clock synthesis and TTL inputs---MAX3690The MAX3690 serializer is powered by 3.3V only with a 200mW power consumption. Ideal for converting 8-bit-wide, 77Mbps parallel data to 622Mbps serial data in SDH / SONET system. Other applications include Add/Drop Multiplexers, Digital Cross-Connects.The clock and data input of MAX3690 is TTL logic level, serial data output is 3.3V PECL logic level. A fully integrated PLL synthesizes an internal 622Mbps serial clock from a low-speed crystal reference clock (77.76MHz, 51.84MHz, or 38.88MHz). An unlocked output of a TLL level can be used to indicate whether the PLL is working properly.MSX3690 is available in 32-pin TQFP packages.Figure 6. Functional diagram of MAX3690 VII Single 8-channel and dual-4 channel multiplexer ICs with precision resistance networks---MAX4539/MAX4540The single-8 channel MAX4539 and the dual-4 channel MAX4540 are a kind of multiway switch with calibration function (calibrating multiplexer), which is suitable for system self-testing and precision type MAX4540. Their built-in precision resistive partial voltage networks can provide accurate reference voltage of V+／2、5／8(V+ -V-)、15VREF/4096 and 4081VREF/4096 (Where VREF is external reference voltage).The MAX4539/MAX4540 have enable inputs and address latching. When power supply working at 5V or ±5V, the digital input has a 0.8V/2.4V logic threshold that guarantees compatibility with TTL/CMOS.The MAX4539/MAX4540 are available in small 20-pin DlP, S0, and SSOP packages, both of which can operate in a single supply of +2.7V to 12V or a duplicate supply of ±2.7V to ±6V. The on resistance (maximum 100 Ω) of the same device matches within 12Ω, and Each switch can handle Rail-to-Rail analog signals.The off leakage current is 1nA at TA = +25°C and 10nA at TA = +85°C.Functional diagram of MAX4539Figure 8. Functional diagram of MAX4540 VIII 8th-Order, lowpass, elliptic, switched-capacitor filters---MAX7400／MAX7403MAX7400/MAX7403 is a newly developed 8th-order, lowpass, elliptic, switched-capacitor filters by MAXIM Company of USA. The cut-off frequency ranges from 1Hz to 10kHz, and only draw 2mA of supply current. With a single power supply of 5 V, it is ideal for low power anti-aliasing and post-filtering of D/A converters. They feature a shutdown mode that reduces the supply current to 0.2μA.MAX7400 devices provide a sharp roll-off with a 1.5 transition ratio and 80 dB of stop-band rejection, while the MAX7403 devices provide a sharper roll-off of 1.2 transition ratio and 58 dB of stop-band rejection. For the both filters, the low output offset of ±4 mV can be adjusted via an offset adjustment pin.The internal switching operation of the filter can be controlled by an internal clock of an external capacitor or an external control to obtain a more accurate angular frequency. The fixed frequency response greatly simplifies the design, which only needs to set the clock frequency according to the desired angular frequency. MAX7400 and MAX7403 filters are available in 8-pin SOIC and plastic DIP packages.Figure 9. Typical application circuit of MAX7400/MAX7403 IX High-speed, digitally adjusted step-down controllers fornotebook CPUs---MAXl710The MAX1710/MAX1711 step-down controllers are intended for core CPU DC-DC converters in notebook computers. They feature a triple-threat combination of ultra-fast transient response, high DC accuracy, and high efficiency needed for leading-edge CPU core power supplies. Maxim's proprietary Quick-PWMTM quick-response, constant-on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns "instant-on" response to load transients while maintaining a relatively constant switching frequency.High DC precision is ensured by a 2-wire remote-sensing scheme that compensates for voltage drops in both the ground bus and supply rail. An on-board, digital-to-analog converter (DAC) sets the output voltage in compliance with Mobile Pentium Ⅱ CPU specifications. The MAX1710 achieves high efficiency at a reduced cost by eliminating the current-sense resistor found in traditional current-mode PWMs. Efficiency is further enhanced by an ability to drive very large synchronous-rectifier MOSFETs.Single-stage buck conversion allows these devices to directly step down high-voltage batteries for the highest possible efficiency. Alternatively, 2-stage conversion (stepping down the +5V system supply instead of the battery) at a higher switching frequency allows the minimum possible physical size. MAXl710 is available in Small 24-Pin QSOP Package.Figure 10. Typical application circuit of MAX7400/MAX1710 X Boosting DC-DC controllers with power levels of 20W---MAX668/MAX669The MAX668/MAX669 constant-frequency, pulse-width modulating (PWM), current-mode DC-DC controllers are designed for a wide range of DC-DC conversion applications including step-up, SEPIC, flyback, and isolated-output configurations. Power levels of 20W or more can be controlled with conversion efficiencies of over 90%. The 1.8V to 28V input voltage range supports a wide range of battery and AC-powered inputs. An advanced BiCMOS design features low operating current (220µA), adjustable operating frequency (100kHz to 500kHz), soft-start, and a SYNC input allowing the MAX668/MAX669 oscillator to be locked to an external clock.DC-DC conversion efficiency is optimized with a low 100mV current-sense voltage as well as with Maxim's proprietary Idle ModeTM control scheme. The controller operates in PWM mode at medium and heavy loads for lowest noise and optimum efficiency, then pulses only as needed (with reduced inductor current) to reduce operating current and maximize efficiency under light loads. A logic-level shutdown input is also included, reducing supply current to 3.5µA.The MAX669, optimized for low input voltages with a guaranteed start-up voltage of 1.8V, requires boot-strapped operation (IC powered from boosted output). It supports output voltages up to 28V. The MAX668 operates with inputs as low as 3V and can be connected in either a bootstrapped or non-bootstrapped (IC powered from input supply or other source) configuration. When not bootstrapped, it has no restriction on output voltage. Both ICs are available in an extremely compact 10-pin µMAX packages.Figure 11. Typical application circuit of MAX669Figure 12. Functional diagram of MAX668/MAX669 XI Low cost and small size RS-232 transceiver---MAX254BMAX254B is a complete electrically isolated RS-232 interface developed by MAXIM Company in USA. It is suitable for the system with demanding cost and size. It is mainly aimed at equipment in which noise, high transient voltage and highland potential damage or communication interference maybe occur.  XII High-performance laser driver---MAX3867The MAX3867 is a complete, single +3.3V laser driver for SDH/SONET applications up to 2.5Gbps. The device accepts differential PECL data and clock inputs and provides bias and modulation currents for driving a laser. The synchronizing input latch can be bypassed if a clock signal is not available.An automatic power control (APC) feedback loop is incorporated to maintain a constant average optical power over temperature and lifetime. The wide modulation current range of 5mA to 60mA and bias current of 1mA to 100mA are easy to program, making this product ideal for use in various SDH/SONET applications.The MAX3867 also provides enable control, a programmable slow-start circuit to set the laser turn-on delay, and a failure-monitor output to indicate when the APC loop is unable to maintain the average optical power. The MAX3867 is available in a small 48-pin TQFP package as well as dice.Figure 13. Functional diagram of MAX3867 XIII High linearity upconverters---MAX2663／MAX2671／MAX2673The MAX2663/MAX2671/MAX2673 miniature, low-cost, low-noise upconverters are designed for low-voltage operation and are ideal for use in portable consumer equipment. Signals at the IF input port are mixed with signals at the local oscillator (LO) port using a double-balanced mixer. These upconverters operate with IF input frequencies between 40MHz and 500MHz, and upconvert to output frequencies as high as 2.5GHz.These upconverters offer a wide range of supply currents and output intercept levels to optimize system performance. Supply current is essentially constant over the specified supply voltage range. Additionally, when the devices are in a typical configuration with VSHDN-bar=0, a shutdown mode reduces the supply current to less than 1μA.The MAX2663/MAX2671 family of upconverters are offered in the space-saving 6-pin SOT23 package. For applications requiring balanced IF ports, choose the MAX2673 upconverters in the 8-pin μMAX package.Figure 14. Typical application circuit of MAX2663／MAX2671／MAX2673   

A high-output-power balanced power amplifier is designed with power-combining architecture for satellite communication terminals. The power-combining architecture introduces a ±45° phase shift in the output matching network of two amplifiers, which makes the balanced power amplifier more tolerant to load mismatch and less sensitive to load variation. This balanced power amplifier is implemented with InGaP/GaAs HBT process. Under the band of 1.5 GHz to 1.7 GHz and the supply voltage of 5 V, the measured results show that 32 dB of the gain, 38 dBm of the saturated output power and 43% of power added efficiency (PAE) are achieved, and a good radio frequency performance can be maintained under load mismatch conditions. Power Amplifier ( PA ) Basics and fundamental tutorial on radio frequency   Catalog Ⅰ Introduction of Power Amplifier 1.1 Background of power amplifier 1.2 Application of power amplifier in   power combination scheme 1.3 High power balanced power amplifier Ⅱ Design and Analysis of balanced Power   Amplifier 2.1 Design of Integral circuit 2.2 Circuit Analysis Ⅲ Test result Ⅳ Conclusion FAQ     Ⅰ Introduction of power amplifier 1.1 Background of power amplifier In recent years, with the development of economy, satellite communication and navigation systems are widely used in electronics and automobile industry,and the demand for power amplifiers of handheld terminal transmitters is increasing.These power amplifiers require greater power output and better stability to meet the performance requirements of satellite communications and navigation systems. Therefore, it is of great significance to study the practical and reliable high power integrated power amplifier used in the handheld terminal of satellite communication and navigation system. The traditional single-terminal multi-stage integrated power amplifier is not only low in output power, due to the influence of its own semiconductor physical characteristics and the limitations of processing technology, heat dissipation, impedance matching, etc, but the output power will also decrease rapidly with the increase of frequency. In order to improve the output power, the power combination technology is a practical and easy method to implement. At the same time, the balanced power amplifier is widely used in the power synthesis scheme because of its insensitive load and wider bandwidth than the single-ended power amplifier.    1.2 Application of power amplifier in power combination scheme In reference, a high linearity and high efficiency power amplifier is realized by balanced synthesis method. The power amplifier has the advantages of flat gain characteristics and more stability than the corresponding single-ended amplifier in a wide band. However, the introduction of orthogonal 3dB couplers at the input and output ends makes the power amplifier require more discrete devices, which is not conducive to miniaturization and integration. In reference, a novel balanced synthesis architecture was used to design a load insensitive power amplifier.This kind of power amplifier adds ±45 °phase shift network to the upper input and lower output terminals, and finally combines the two power channels through the Wilkinson synthesizer at the output end. This design not only achieves high efficiency and linearity, but also has good stability when the load changes. It is widely used in 3G WCDMA mobile phone terminals. However, the introduction of Wilkinson synthesizer also brings many disadvantages, such as large insertion loss, increasing integration cost and complexity. In reference, on the basis of reference, the ±45°phase shift network in the output end of the power amplifier is improved and optimized, the Wilkinson synthesizer is removed either, which makes the power amplifier insensitive to the load change while achieving high efficiency and high linearity.This design reduces the integrated devices, reduces the cost, and is widely used in modern 3G smart phone terminals.   1.3 High power balanced power amplifier Based on the comprehensive consideration of output power and stability, a high power balanced power amplifier based on InGaP/GaAs HBT process, operating in the 1.5-1.7 GHz band, is designed in this article. The test results show that the balanced power amplifier has high output power and power addition efficiency (PAE), and the circuit can still maintain good RF performance when the load mismatches. Ⅱ Design and analysis of balanced power amplifier 2.1 Design of Integral circuit  Due to the superior linearity and high efficiency of HBT process in RF IC design, a balanced power amplifier working in 1.5-1.7 GHz band is designed by using InGaP/GaAs HBT process in this article. The overall circuit structure is shown in figure 1. The balanced power amplifier circuit includes the same upper and lower branch amplifiers, and the input and output matching circuits of ±45°phase-shifting networks. In order to obtain a higher gain, the upper and lower branches are designed using a three-stage power amplifier structure, in which the first stage works in a class A to obtain a high linearity; in order to take into account the linearity and efficiency of the overall power amplifier, the second and third stages work in Class AB.   Figure 1. A balanced power amplifier circuit   In order to achieve a good compromise between efficiency and linearity, the biasing circuit adopts self-adaptive linearizing bias.By adding one inductor and one capacitance to the input matching circuit of the upper and lower branches, the balanced power amplifier generates ±45°phase shift to the input signal, thus realizing that the upper and lower channels of the amplifier work in an orthogonal state. A LC resonant network with a resonant frequency of 2Ω0 is added to the output matching, where Ω0 is the fundamental frequency, which is equivalent to getting a load of second harmonic short circuit at the same time, thus realizing the suppression of the second harmonic. The structure is similar to that of F power amplifier, and is beneficial to obtain higher efficiency. The main characteristic of the circuit in this article is that the output matching circuit of the upper and lower branches added a ±45°phase shift network, the upper branch adds a -45°phase shift network with a low pass filter structure, and the lower branch adds a +45°phase shift network with a high pass filter structure. The balanced power amplifier designed by this synthetic structure has the advantages of small space usage, simple structure and easy implementation. At the same time, it can make the balanced power amplifier more tolerant to load mismatch and insensitive to the change of load.   2.2 Circuit Analysis When the balanced power amplifier is in operation, the input signal is coupled to the A node through the blocking capacitor, and two signals are separated from the A node into the upper and lower branches respectively, because the three-stage amplifier in the upper and lower branches is exactly the same, they sharing an equal input impedance, so the power of the two signals separated at the A node is equal. The separated signals are transmitted to the input end of the amplifier through the opposite 45°phase change of the upper and lower branches respectively, and then the orthogonal signals are amplified by the three-stage amplifier of the upper and lower branches. The orthogonal signal of the upper and lower branches undergoes an opposite phase shift of 45° in the output matching network, so the same signal with the same phase and the same amplitude is realized at point B, and the output power of point B is the sum of those of the two amplifiers, finally the balanced power amplifier can obtain higher output power. The balanced power amplifier is equivalent to the three-port network shown in figure 2. Because the upper and lower branch of amplifiers are exactly the same,it can be considered that the amplifiers of the upper and lower branches have the same output reflection coefficient ΓPA. After passing through ±45°phase shift network, we can obtain ΓPAе −j2ΔΦ and ΓPAе +j2ΔΦ respectively. Therefore, the equivalent output impedance of the upper and lower branches viewed from the ab surface to the left in figure 2 is respectively as follows:   The equivalent output impedance ZL of the network viewed from the terminal to the left can be obtained in parallel by ZL1 and ZL2: The output reflection coefficient of node B is: By substituting formula (1)-(3) into equation (4) and simplifying, the output reflection coefficient of the balanced power amplifier is as follows: When ΔΦ=45°, you have: It is shown that the output reflection coefficient and VSWR of the balanced power amplifier are twice as much as that of the single branch power amplifier. Therefore, when the load mismatch occurs, the load mismatch tolerance of the balanced power amplifier is higher than that of the single-branch power amplifier after the ±45°phase shift output matching network is introduced. Figure 2. Circuit equivalent diagram In order to analyze the performance of the balanced power amplifier in the case of load mismatch, the equivalent circuit of figure 2 is simulated and analyzed. When the load mismatch (such as VSWR=3:1), the load impedance (normalized) of the upper and lower branch amplifiers varies with the phase ψ of the reflection coefficient Γ, as shown in figure 3. By comparing the load impedance of the upper and lower branches, it can be seen that they have a phase difference of 180°. Because of the change of the load impedance of the upper and lower branches, the corresponding current is changed, and the phase difference of 180°occurs between the two. The collector of the two third-stage amplifiers of the balanced power amplifier is single power supply, so the current of the upper and lower branches compensates each other, resulting in little change in the total current, as shown in Figure 4. Therefore, when the load mismatch of the balanced power amplifier occurs, the change of working current is relatively small, that is, not sensitive to the change of load. The load insensitive effect of using this balancing architecture is similar to that of classical balanced power amplifier which is realized by using orthogonal 3 dB coupler. Figure 3. Changes in the load of the structure (normalized) when VSWR=3:1 In the case of terminal mismatch (VSWR=3:1), the single end circuit architecture and the present balanced architecture are compared as shown in Fig. 5 with the same output power of 38 dBm. It can be seen from figure 5 that the output power of the single-ended circuit architecture fluctuates greatly with of the phase ψ of the reflection coefficient Γ, while the output power of the balanced architecture in this article is relatively flat. At the same time, compared with the circuit architecture without phase shift, the in-phase circuit architecture has more advantages than the single-ended circuit architecture, but the output power of the balanced architecture is the flattest and can work stably. Figure 4. Changes of current of the structure (normalized) when VSWR=3:1 Figure 5. Comparison with the output power (normalized) changes in three kinds of circuits when VSWR=3:1   Ⅲ Test result  In this post, the balanced power amplifier is fabricated by InGaP/GaAs HBT technology. The three-stage amplifier and bias circuit with upper and lower branches are realized in the chip with an DIE area of 0.9 mm×0.8 mm. The choke inductor, input matching and output matching circuit are realized out of the chip. Considering the heat dissipation of the power amplifier, the whole thing is integrated on the Fr4 substrate with an area of 8 mm×8 mm. Figure 6 is the physical diagram of the circuit.The working voltage of the balanced power amplifier is 5 V and the total static current is about 310 mA. Using Agilent's network analyzer E5071C to measure the small signal S parameters S21, S11, S22 of the balanced power amplifier, as shown in figure 7: S21 > 31 dB (in the band of 1.5 GHz-1.7 GHz with a variation of less than 1 dB) S11 < -12 dB S22 < -10 dB The test results show that the design has good small signal performance. Using Agilent's signal generator N5182A and spectrometer N9030A to build the test platform, inputting continuous wave (CW) and the performance of the balanced power amplifier is measured at 1.5,1.616 and 1.7 GHz, as shown in figure 8. It can be seen from the diagram that the gain of the balanced power amplifier in the frequency band is about 32 dB, the in-band gain flatness is ±0.3 dB, the saturation power is more than 38 dBm/6.3 WN, and the power additional efficiency is greater than 43 dB. At the same time, according to the gain curve of each frequency point, the balanced power amplifier has good AM-AM characteristic and 1dB compression point is about 37 dBm. The third order intermodulation distortion (IMD3) and the fifth order intermodulation distortion (IMD5) of the balanced power amplifier are measured by using a two-tone signal with a deviation of 2 MHz, as shown in figure 9. The results show that the balanced power amplifier has good linearity. In general, the balanced power amplifier not only has high gain, high output power and high efficiency, but also has good linearity.  Figure 6. Chip physical diagram Figure 7. S parameter test results Figure 8. Test performance in frequency band when CW signal is input In order to verify the tolerance of the balanced power amplifier to the load mismatch and the load insensitivity, and the balanced power amplifier can still work properly when VSWR=20:1, a microwave manual tuner is connected to the output of the power amplifier. And when the working frequency is 1.616 GHz, the input power Pin=10 dBm and voltage standing-wave ratio VSWR=3:1, the output power of the balanced power amplifier changes with the reflection coefficient phase, as shown in Figure 10. The figure shows that the output power is about 35.7 dBm, with a range of ±0.7 dBm. Therefore, the performance of the balanced power amplifier is stable when the load is mismatched to a certain extent. Figure 9. Test performance of IMD3 and IMD5 Figure 10. Changes of output power when VSWR=3:1 Ⅳ Conclusion In this post, a high power balanced power amplifier is designed by using the balance architecture, the chip area is 8 mm×8 mm by using InGaP/GaAs HBT process and the total static current is about 310 mA at a operating voltage of 5V. When the CW signal is input, the gain can be up to 32 dBm in the band of 1.5-1.7 GHz, the saturation output power psat is 38 dBm, and the additional power efficiency is 43%. Beyond that, it can still work stably when the load mismatches. This balanced power amplifier is practical, reliable and safe, and can be used in handheld terminal of the satellite communication and navigation system.   FAQ     1. What is a power amplifier used for? The function of a power amplifier is to raise the power level of input signal. It is required to deliver a large amount of power and has to handle large current. The base of transistor is made thicken to handle large currents.   2. How does a power amplifier work? The power amplifier works on the basic principle of converting the DC power drawn from the power supply into an AC voltage signal delivered to the load. Although the amplification is high the efficiency of the conversion from the DC power supply input to the AC voltage signal output is usually poor.   3. Does a power amp make a difference? A better amp will make your speakers play louder and sound better, but it won't make bad speakers sound like good speakers. Many speakers have a "maximum wattage rating" on the back. ... High-end amplifier companies make amps with more than 1,000 watts, and you could plug in a $50 speaker into it with no problem.   4. What is power amplifier circuit? A power amplifier circuit is used to drive the loads like speakers with minimum output impedance. ... In this mode the output is an inverted amplified signal which is at low power. Two Darlington power transistors are arranged in a class AB configuration to amplify the power level of this signal.   5. How do you make a power amp circuit? Amplifier power gain and design. As power is the voltage multiplied by the current in a circuit, the power gain can simply be expressed as the product of the two. It is also possible to use the voltage and current levels to provide gain expressed in dB, but any changes in impedance must be accounted for.   6. What is balanced amplifier? A balanced amplifier has two amplifying devices that are run in quadrature. That is, they are operating 90 degrees apart in transmission phase. ... Balanced amplifiers may more immune to load pull effects than in-phase power combining schemes, because the two reflection coefficients are seen 180 degrees out of phase.   7. What is the difference between amplifier and power amplifier? The crucial difference between a voltage amplifier and a power amplifier is that a voltage amplifier increases the voltage level of the applied input signal.   8. Why do we need power amplifier? The function of a power amplifier is to raise the power level of input signal. It is required to deliver a large amount of power and has to handle large current. The base of transistor is made thicken to handle large currents.   9. What power amplifier do I need? Generally you should pick an amplifier that can deliver power equal to twice the speaker's program/continuous power rating. This means that a speaker with a “nominal impedance” of 8 ohms and a program rating of 350 watts will require an amplifier that can produce 700 watts into an 8 ohm load.   10. Does a power amp improve sound quality? No, amplifiers don't improve sound quality. They just increase the signals to required levels. However if amplifiers have equaliser or other signal processing facility, they can make it sound different and possibly more suitable for listening pleasure. But again that is the work of signal processing part of amplifier.  

This article is mainly to talk about the latest development of electric vehicle power management technology. Electric vehicle systems consist of electric motors, power converters, and energy storage devices such as lithium-ion batteries. This new architecture system must be optimized to maximize system efficiency, enabling the car to achieve maximum travel distance on a single charge. These developments in electronic technology have created conditions for reducing the emissions from transportation. Save our planet and keep the earth away from pollution! This is a consensus voice among scientists and people of insight around the world to reduce greenhouse gas emissions. Vehicles powered by fossil fuel combustion engines are the culprit. Although there are many alternative technologies to promote car travel, the only feasible solution at present is: electric cars.   Catalog   I Electric vehicles (EV) and hybrid electric vehicle (HEV) II Silicon carbide (SiC) power supply for electric vehicles III GaN power supply for electric vehicles IV Utilizing hybrid vehicle transmission system to reduce greenhouse gas emissions V Automotive inverter VI Dual-voltage battery system VII Delphi integration and wiring VIII Electric wheel drive system IX Conclusion FAQ I Electric vehicles (EV) and hybrid electric vehicle (HEV) An electric vehicle (EV) runs on a battery, as does a hybrid electrical vehicle (HEV), except that it also uses a fossil-fueled internal combustion engine as an aid. The technologies that power these cars need to be successful and have a bright future. Energy efficiency is the key. Therefore, intelligent power management mechanisms are needed to maximize the efficiency of converting battery energy into wheel mechanical driving force, thereby increasing single-charge charging. Travel distance, while not increasing carbon emissions, is ideally a significant reduction in carbon emissions. This video describe the operational characteristics of a hybrid vehicle drive train: Introduction to hybrid-electric vehicle energy monitor   II Silicon carbide (SiC) power supply for electric vehicles The weight, size, and cost of an electric vehicle, and the distance travelled by a single charge, are directly related to the efficiency of the power conversion system. SiC power components are ideal for working in the high temperature environments that are common in automobiles. Let us take a closer look at the role of silicon carbide power components in improving system efficiency. Lighter weight means longer mileage. A typical way to reduce the weight, cost, and size of a power conversion system is to increase the switching frequency of the switching regulator. We know that the size and weight of active components such as inductors, capacitors, and transformers can be reduced when operating at higher frequencies. Embrace the silicon carbide (SiC) solution. Although silicon (Si) power devices can also operate at high frequencies, the advantage of SiC is the ability to handle much higher voltages than Si. SiC is a wide band gap semiconductor device, and a wider band gap means a higher critical electric field (a critical electric field is a blocking voltage in an off state). The high voltage capability of wide bandgap (WBG) SiC devices allows them to have lower on-resistance, resulting in faster switching speeds and unipolar operation. Part of the principle is that their carrier frequencies need to be accelerated to much higher speeds (more High kinetic energy) to overcome wider band gaps. Although gallium arsenide (GaAs) and gallium nitride (GaN) also have high critical electric fields and are also improved devices for high-power solutions, SiC has other advantages, such as higher maximum operating temperatures. High Debye temperature, high thermal conductivity (in polycrystalline SiC), rapid switching and high resistivity saturation with low resistivity in the electric field, facilitated generation of lower silica (SiO2) The production cost, as well as the higher threshold energy brings more robust radiation resistance. SiC devices have many key applications in electric vehicles. The existing electric traction drive can convert 85% of the electrical energy into mechanical energy to drive the wheels. This efficiency is quite high, but SiC can also help improve efficiency. The power converter can benefit from improved efficiency because it transfers battery power to the engine and can be used in the battery charger circuit and any needed auxiliary power (Figure 1). Figure 1. SiC power devices have many uses in electric vehicles The SiC power supply that converts 750V to 27V for low-voltage electric vehicles is a good example of using SiC power devices to improve the efficiency of electric vehicles. This architecture increases efficiency from 88% to a staggering 96%, reduces size and weight by 25%, and does not require fans to cool excess heat compared to Si solutions. Table 1 shows some important applications of SiC power devices for electric vehicles. The reference information mentioned in the table can be found by referring to Reference 1 at the end of this article. Table 1. Some SiC applications in the electric vehicle electronics architecture III GaN power supply for electric vehicles Gallium nitride (GaN) also contributed to the improvement of the power supply of electric vehicles. IGBTs widely used in motor drive and DC/DC control have been silicon-based products. These designs typically have switching times on the order of 10kHz to 100kHz, while GaN devices can switch nanoseconds and can easily operate in a 200°C automotive environment. Like SiC, GaN devices can also reduce the size of inductors, capacitors, and transformers in power supply architectures due to their higher switching speeds. They can also reduce the overall size and weight due to the shrinking size of passive components. We will analyze their efficacy based on the chemical composition of electric vehicle batteries, such as lithium-based chemistry and NiMH with high energy density. As described in the previous SiC device section, the efficiency of the power conversion architecture also needs to be improved in order to enable longer distances for a single charge. The switching speed and minimum on-resistance of silicon devices have reached their maximum limit, and GaN seems to be a viable solution that exceeds these limits. Experiments show that if the switching frequency can be increased by 5 times, the inductor and capacitor can be reduced to one-fifth the size. Today's GaN technology can support very high speeds. GaN power devices perform quite well in four key areas: high temperature operation, higher breakdown voltage, low on-resistance, and nanoscale switching speeds for higher operating frequencies. GaN is similar to SiC in terms of these advantages. There are two differences between them: LEDs and RF transistors always use GaN; many silicon manufacturing processes are compatible with GaN processes, which reduces wafer costs and processes compared to the higher substrate costs of SiC. cost. Since the reliability problem was solved as early as 2003, today's technology has achieved the first batch of GaN high electron mobility transistor (HEMT) devices already in production. These are normal conduction devices, so the gate voltage of 0V will become conductive, and any voltage less than 0V will turn the device off. The SiC substrate was used early. Once the Si substrate is perfectly integrated with GaN, the production cost can be significantly reduced. The new cascaded architecture implemented in 2014 changed the ever-changing devices into normally-off devices. Since then, the drive technology has made great progress, the integration is getting higher and higher, and the power inverter has also made significant progress. GaN devices also perform well in battery chargers for electric vehicles, which consist of AC/DC converters plus DC/DC converters. This combination is a power factor controller (PFC) (Figure 2). Figure 2: A typical electric vehicle power architecture With GaN, coupled with higher switching speed GaN HEMTs, smaller passive devices can be realized. At higher frequency conditions, using a smaller inductor can make the ripple current of the power supply architecture lower, improve the power factor, and get a capacitor with a smaller size and lower cost. Lower ripple currents also have less stress on the capacitors, increasing their reliability and lifetime. Over the past few years, the reliability of GaN has been raised to a very high standard, which is the key to the use of GaN in automobiles. IV Utilizing hybrid vehicle transmission system to reduce greenhouse gas emissions At present about 72% of traffic emissions are generated by cars driving on the road. Improving the design of the hybrid powertrain drive system to increase its efficiency is the primary means of reducing emissions. One approach is to increase the efficiency of the DC-link voltage control architecture, which means that first it is necessary to increase the power converter efficiency of the series hybrid electric vehicle drive system. The DC-link is usually connected to three drive systems: a primary power supply consisting of a three-phase rectifier; a secondary power supply consisting of a dual active bridge (DAB) DC/DC converter; and a propulsion load consisting of a three-phase inverter ( Figure 3). They relate to tandem hybrid cars. Figure 3: Block diagram of the drive train of a hybrid vehicle In a design topology where the DC-link and battery voltages are not equal, an intermediate DC/DC converter solution is required. The paper "Voltage Control Methods for Improving Efficiency of Power Circuits in Series Hybrid Electric Vehicles" (Reference 3) describes many methods for studying different architectures and solutions for various DC-link voltage and DC/DC converter control. . The following will discuss the proportional control law that controls the dynamic DC-link voltage to achieve the phase shift between the waveforms of the gate switching of the DAB DC/DC converter bridge. This converter is located between the DC-link and the battery of a series hybrid vehicle drivetrain, as shown in Figure 4. In this case, the controller lowers the power consumption of the DC/DC converter and the entire drive system. Figure 4: Hybrid driveline interconnection diagram in the control schematic In this model, the diesel engine is the main power source of the hybrid vehicle, and the DC battery is the secondary power source. The supervisory control system (SCS) controls the ratio of power provided by the two power sources based on battery state of charge (SOC) and motor load. In fact, in this series hybrid vehicle, the DC-link voltage imposes restraint conditions on the ideal working area of PMSM and PMSG corresponding to the unit modulation index, so that the system can avoid signal distortion and reduce system efficiency. Overshoot state. Keeping the modulation index close to 1 can increase the total efficiency of the power circuit in the drive system, thereby maximizing the efficiency of the inverter and the rectifier, and the switching process is the main factor of its efficiency loss. Therefore, reducing the switching voltage can improve efficiency. This permanent zero pressure switch (PZVS) mechanism that minimizes power loss is best suited for cars with high mixing factors, especially in urban environments. The mixing factor (HF) is the ratio of the installed power from the power source to the total installed power. This mixing factor affects the fuel consumption in hybrid vehicles. V Automotive inverter The main power inverter controls the electric motor in the electric drive system and is an important component in the hybrid/electric vehicle. Power inverters, like engine management systems (EMS) in internal combustion engine cars, determine driving behavior. This inverter is suitable for any motor, such as synchronous, asynchronous or brushless motor, controlled by an integrated electronic PCB board. This PCB is specifically designed by automotive manufacturers to minimize switching losses and maximize thermal efficiency. The other function of the inverter is to capture the energy released by the regenerative brake and feedback to charge the battery. The distance traveled by hybrid/electric vehicles is directly related to the efficiency of the main inverter (Figure 5). Figure 5: Infineon main inverter block diagram in a hybrid/electric vehicle VI Dual-voltage battery system Managing batteries in hybrid and electric vehicles requires high-voltage technology. Dual-voltage systems incorporating 12V and 48V batteries require bi-directional DC/DC conversion, as shown in Figure 6, with the goal of protecting the circuit and supporting architectural functions. Figure 6: Bidirectional DC/DC converters from 48V to 12V In addition, automotive architecture designs typically have a single-phase 3.5kW or 7kW on-board charger module (OBCM) for charging an electric vehicle or plug-in hybrid electric vehicle (PHEV) from the grid. In contrast, electric vehicles and plug-in hybrid vehicles can be used as energy sources, and can also be used as energy storage devices in smart grids that integrate renewable energy. Smart grid work takes into account the smart charging and discharging of electric vehicles and plug-in hybrid vehicles. This is why OBCM must be a bi-directional DC/DC charger. The best architecture for this design is a boost series of resonant bi-directional topologies, as shown in Figure 7. It operates above the resonant frequency, has a zero-voltage switching function, and has maximum power transfer performance at the minimum switching frequency point. Compared to unidirectional power converters, this technology replaces diode rectifiers with MOSFET rectifiers. This solution also has higher efficiency and wider battery capacity. One of the major drawbacks of this architecture shown in Figure 7 is that the rectifier bridge has large losses when it is turned off. This problem must be addressed in future designs. Figure 7: Designers sometimes use a modulated DAB converter to control simple high-frequency isolation VII Delphi integration and wiring It is amazing that Delphi integrates all of the components discussed in this article and some of the other hybrid electric vehicle power electronics (Figure 8). Figure 8. Delphi achieves high integration in hybrid/electric vehicles It is also important to use suitable internal connectors in hybrid/electric vehicles (Figure 9). Figure 9. The key element of a hybrid/electric car is to minimize the quality     VIII Electric wheel drive system “Design and implementation of electric drive systems for in-vehicle electric vehicle applications” (Reference 8) proposes a hub drive system for hybrid and electric vehicles, and a hub-drive hybrid vehicle that provides computing performance. The SIMULINK model has been successfully developed. Two 14kW DC brushless DC (BLDC) motors are manufactured according to the literature and are installed in the rim of the hybrid vehicle wheels. In addition, two independently driven rear wheels are also mounted on Fiat's Linea. By detecting the angle of the steering wheel, electronic control technology replaces the mechanical differential device. The electric drive control system of the car and the electronic control unit (ECU) communicate via the CAN bus. A successful cascade is achieved between the electrically driven rear wheel and the ICE-driven front axle. Figure 10. A rear-wheel brushless DC motor image This design chose a brushless DC motor with a concentrated coil because it has a very low power-to-weight ratio and high efficiency, and it is easy to control. Figure 11. Exploded view of a direct-drive brushless DC motor in wheel rims and motor-generator units The brushless DC motor power drive consists of an integrated power module (IPM), an 8-bit microcontroller and an electronic control system. Driver software development for IGBT converter control and motor pulse width modulation (PWM) voltage control. The system has optocoupler isolation, current and temperature protection, and the system is also embedded with speed, current and voltage sensors. In summary, this article describes some recent developments in the power management of electric vehicles and hybrid vehicles. In the future, there will certainly be more development results that will be further improved to benefit our planet. IX Conclusion Electric propulsion technology requires the integration of a completely new architecture of the powertrain in the vehicle. This newly added component requires a multidisciplinary and in-depth study of the corresponding system components. Electric vehicle systems consist of electric motors, power converters, and energy storage devices such as lithium-ion batteries. This new architecture system must be optimized to maximize system efficiency, enabling the car to achieve maximum travel distance on a single charge. These developments in electronic technology have created conditions for reducing the emissions from transportation.   FAQ   1. What is energy management system in electric vehicles? Energy management strategies are the algorithms that decide the power split between engine and motor in order to improve the fuel economy and optimize the performance of HEVs. ... A lot of research work has been conducted for energy optimization and the same is extended for Plug-in Hybrid Electric Vehicles (PHEVs).   2. What is EV technology? EVs (also known as plug-in electric vehicles) derive all or part of their power from electricity supplied by the electric grid. They include AEVs and PHEVs. AEVs (all-electric vehicles) are powered by one or more electric motors. They receive electricity by plugging into the grid and store it in batteries.   3. What is the biggest challenge with electric vehicles? The major challenge is costs. Battery technology is expensive, and because batteries in electric cars need to be able to hold massive amounts of charge to make the cars practical for most drivers, they have to be built using expensive materials, most of which are tough to procure.   4. Why electric cars are bad for the environment? Nevertheless, at the end of the manufacturing process, electric cars are the ones generating more carbon emissions, according to the Union of Concerned Scientists. Why is this? Because electric cars store energy in large batteries (the larger they are, the bigger their range is) that have high environmental costs.   5. What are the main problems with electric cars? The biggest problem with EVs is range. While a plug-in hybrid can count on gasoline as a backup, EVs can't. An EV like the Tesla Model S can travel nearly 400 miles on a single charge, but not all EVs can make it quite that far. EVs like the Model S tend to be pretty expensive too.   6. What is meant by electric vehicle? An EV is a shortened acronym for an electric vehicle. EVs are vehicles that are either partially or fully powered on electric power. Electric vehicles have low running costs as they have less moving parts for maintaining and also very environmentally friendly as they use little or no fossil fuels (petrol or diesel).   7. How do electric vehicles work? Electric cars function by plugging into a charge point and taking electricity from the grid. They store the electricity in rechargeable batteries that power an electric motor, which turns the wheels. Electric cars accelerate faster than vehicles with traditional fuel engines – so they feel lighter to drive.   8. What are the types of electric vehicles? There are two basic types of EVs: all-electric vehicles (AEVs) and plug-in hybrid electric vehicles (PHEVs). AEVs include Battery Electric Vehicles (BEVs) and Fuel Cell Electric Vehicles (FCEVs).   9. Do electric cars run on AC or DC? Electric cars can use AC or DC motors: If the motor is a DC motor, then it may run on anything from 96 to 192 volts. Many of the DC motors used in electric cars come from the electric forklift industry.   10. Are there any benefits of owning an electric car? They can reduce emissions and even save you money. Fueling with electricity offers some advantages not available in conventional internal combustion engine vehicles. Because electric motors react quickly, EVs are very responsive and have very good torque.  

Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes. MIT researchers found a way to triple the efficiency by using "topological" materials with special electronic properties. Although previous research has indicated that topological materials could be used to create efficient thermoelectric systems, little is known about how electrons in such topological materials can move in response to temperature differences to produce a thermoelectric effect. Researchers not only found that they can push the boundaries of this nanostructured material in a way that makes topological materials a good thermoelectric material,more so than conventional semiconductors like silicon,but also this could be a clean-energy way to help us use a heat source to generate electricity, which will lessen our release of carbon dioxide. NewsToday, thermoelectric devices are used for relatively low-power applications, such as powering small sensors along oil pipelines, backing up batteries on space probes, and cooling minifridges. Scientists hope to develop more efficient thermoelectric devices that will harvest heat produced as a byproduct of industrial processes and combustion engines and convert it into electricity. However, thermoelectric devices' power, or the amount of energy they can generate, is currently limited. "We discovered that we can push the limits of this nanostructured material in a way that makes topological materials a better thermoelectric material than traditional semiconductors like silicon," says Te-Huan Liu, a postdoctoral researcher in MIT's Department of Mechanical Engineering. "In the end, this could be a clean-energy way to help us use a heat source to generate electricity, which will lessen our release of carbon dioxide," Liu added. Liu is first author of the PNAS paper, which includes graduate students Jiawei Zhou, Zhiwei Ding, and Qichen Song; Mingda Li, assistant professor in the Department of Nuclear Science and Engineering; former graduate student Bolin Liao, now an assistant professor at the University of California at Santa Barbara; Liang Fu, the Biedenharn Associate Professor of Physics; and Gang Chen, the Soderberg Professor and head of the Department of Mechanical Engineering.A Path Travel Freely When a thermoelectric material is exposed to a temperature gradient — for example, one end is heated while the other is cooled — electrons begin to flow from the hot end to the cold end, resulting in an electric current. The greater the temperature difference, the more electric current and power are made. The amount of energy that can be produced is determined by the electron transport properties of a given material. Scientists have discovered that certain topological materials can be converted into efficient thermoelectric devices using nanostructuring, a technique used by scientists to create a material by patterning its features at the nanometer scale. Scientists believe that the thermoelectric benefit of topological materials stems from decreased thermal conductivity in their nanostructures. However, it is uncertain how this increase in efficiency relates to the material's inherent, topological properties.     Liu and his colleagues investigated the thermoelectric efficiency of tin telluride, a topological material considered to be a strong thermoelectric material, to try to address this issue. Tin telluride electrons also have unusual properties that resemble a class of topological materials known as Dirac materials. The researchers wanted to understand the effect of nanostructuring on the thermoelectric efficiency of tin telluride by simulating electron movement through the material. Scientists often use a calculation known as the "mean free path" to characterize electron transport. This is the average distance an electron with a given energy can freely travel within a material before being dispersed by different objects or defects in that material. Nanostructured materials resemble a patchwork of tiny crystals, each with its own boundary, known as grain boundaries, that separates one crystal from the next. As electrons come into contact with these limits, they scatter in a variety of ways. Electrons with long mean free paths scatter violently, similar to bullets ricocheting off a wall, whereas electrons with shorter mean free paths are much less affected. The researchers discovered that the electron properties of tin telluride have an important effect on their mean free paths in their simulations. They plotted the spectrum of electron energies in tin telluride against the related mean free paths and discovered that the resulting graph looked very different from that of most traditional semiconductors. In particular, for tin telluride and probably other topological materials, the findings indicate that higher-energy electrons have a shorter mean free path, while lower-energy electrons have a longer mean free path. The researchers then investigated how these electron properties influence the thermoelectric efficiency of tin telluride by essentially summing up the thermoelectric contributions from electrons with different energies and mean free paths. It turns out that the ability of a substance to conduct electricity, or produce a flow of electrons, under a temperature gradient is largely determined by the electron energy. They discovered that lower-energy electrons have a negative effect on the production of a voltage difference, and hence electric current. Since low-energy electrons have longer mean free paths, they can be dispersed more intensely by grain boundaries than high-energy electrons.Size DownGoing a step further in their simulations, the team experimented with the size of individual grains of tin telluride to see whether this had some impact on the movement of electrons under a temperature gradient. They discovered that raising the diameter of an average grain to around 10 nanometers, putting its boundaries closer together, increased the contribution of higher-energy electrons. Higher-energy electrons contribute much more to the material's electrical conduction with smaller grain sizes than lower-energy electrons because they have shorter mean free paths and are less likely to scatter against grain boundaries. As a result, a greater voltage difference can be produced. Furthermore, the researchers discovered that shrinking the average grain size of tin telluride to around 10 nanometers yielded three times the amount of electricity that the material would have produced with larger grains. Although the findings are based on simulations, Liu claims that researchers can achieve comparable results by synthesizing tin telluride and other topological materials and changing their grain size using a nanostructuring technique. Other researchers have proposed that shrinking the grain size of a material can improve its thermoelectric efficiency, but Liu claims that they have mostly assumed that the ideal size is much larger than 10 nanometers. "In our simulations, we discovered that we can shrink the grain size of a topological material far more than previously thought, and based on this principle, we can increase its performance," Liu says. Tin telluride is one of the topological materials that have yet to be discovered. If researchers can determine the optimal grain size for each of these materials, topological materials, according to Liu, can soon be a viable, more effective alternative to producing renewable energy. ConclusionLiu believes that topological materials are excellent for thermoelectric materials, and our findings indicate that this is a very promising material for potential applications. The Solid-State Solar Thermal Energy Conversion Center, an Energy Frontier Research Center of the United States Department of Energy, and the Defense Advanced Research Projects Agency contributed to this research (DARPA). Article From Proceedings of the National Academy of SciencesArticle Edited by kynix