The Kynix Blog - Transistors

Overview: This article explores FinFET technology, detailing its structure, working principles, types, and advantages in modern semiconductor design, highlighting its impact on performance and miniaturization. Over decades, transistors have greatly reduced in size from millimeters to tens of nanometers, allowing for greater functionality within microchips, which results in increased density and speed. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistors) is a type of transistor with four terminals: the Gate (G), Source (S), Drain (D), and Body (B), as shown in Fig. 1. The gate is the control terminal, while the source and drain are the terminals through which charge carriers enter and exit the channel. When a voltage is applied to the gate terminal, it creates an electric field that influences charge carriers in the substrate, and current flows from the source to the drain. Fig. 1 Diagrammatic illustration of a structure and working of MOSFET. Source: Rakesh Kumar, Ph.D. The amount of current flowing through this channel is controlled by varying the gate voltage. Additionally, when the length (L), depicted in Fig. 1 of the gate electrode is reduced, the control of the gate over the channel region is also reduced, which lowers the transistor performance. However, the short-channel effect is one of the important challenges of miniaturization. When the channel length is reduced to a point where it becomes comparable to the depletion layer widths of the source and drain junctions, the electrical characteristics of the device are impacted. Several other challenges include gate-induced drain leakage, diminished low power performance, threshold voltage shifts, etc. Overcoming Challenges with Miniaturization of Transistors Multi-gate field-effect transistors (MuGFETs) have emerged as an advancement in overcoming the limitations of traditional MOSFETs. This design minimizes short-channel effects by enhancing gate control over the channel region, which is important as devices scale down to sub-20 nm nodes. The most common type of MuGFET includes Fin Field-Effect Transistors. FinFET FinFET, or Fin Field-Effect Transistor, is an advanced type of MOSFET characterized by its three-dimensional structure where the channel forms vertical "fins" for enhanced electrical performance. This non-planar transistor design addresses the limitations of traditional planar MOSFETs. The FinFET design incorporates multiple gates that wrap around the channel, as shown in Fig. 2, providing improved electrostatic control over the channel. This configuration significantly reduces leakage currents and enhances drive current capabilities. Fig. 2 A comparison of the structure of a)MOSFET and b) FinFET Source: MDPI Structure of FinFET The channel is formed by thin vertical fins made of semiconductor material, typically silicon. These fins extend upwards from the substrate, providing a larger effective channel area for current flow. The gate wraps around the fins on three sides (in tri-gate configurations), allowing superior electrostatic control over the channel. A silicon dioxide layer (SiO₂) acts as an insulator between the gate and the channel, preventing direct electrical contact and enabling the gate to influence the channel’s conductivity through an electric field. The substrate is the base for the entire structure and can be either bulk silicon or silicon-on-insulator (SOI). The lightly doped p-type substrate supports the fins and helps isolate individual devices on a chip. Working of FinFET When a positive voltage is applied to the gate of an n-channel FinFET, it generates an electric field that attracts electrons from the source region to form an inversion layer in the p-type substrate beneath the gate oxide. As the gate voltage exceeds a threshold (threshold voltage), this inversion layer allows current to flow between the source and drain. The channel formed by this inversion layer provides a conductive path for charge carriers. Current flows from the source to the drain when a voltage is applied across these terminals. The amount of current flowing through this channel can be controlled by varying the gate voltage. If the gate voltage is below the threshold, no channel forms, resulting in no current flow (cutoff region). As voltage increases further, the current reaches saturation and stabilizes. Types of FinFET FinFETs may be divided into two primary groups according to the thickness of their dielectric, as shown in Fig. 3 as Double-gate FinFETTri-gate FinFET Double-Gate FinFET A double-gate FinFET features a single-gate electrode that controls the channel from two opposite sides of the fin (front and back). This design is enhanced with a dielectric layer positioned above the fin, often called a hard mask. This layer inhibits the electric field from affecting the top of the fin, thereby preventing parasitic inversion channels at the corners of the fin. Tri-Gate FinFET In contrast, a tri-gate FinFET has a single gate electrode that wraps around three sides of the fin. This allows full control over the channel from three directions without any dielectric layer inhibiting the electric field above the fin. Double-gate and tri-gate FinFET are known for their lower parasitic capacitance, less complex structure, and manufacturing process. Fig. 3 Illustration of types FinFET a) Double-gate and b) Tri-gate FinFET. Source: MDPI One of the advanced transistor architectures that enhances control over the channel by surrounding it with a gate on all sides is a gate all around FET. Gate-all-around FET Gate-all-around FET (GAA-FET) has improved gate coupling and enables precise channel tuning and lower short-channel effects. Unlike FinFETs, where the gate wraps around the channel on three sides, GAAFETs surround the channel on all four sides, as shown in Fig. 4. This provides superior electrostatic control over the channel, significantly reducing leakage currents and enhancing performance. Fig. 4 Diagrammatic illustration of the structure of MOSFET, FinFET, and Gate all around FET. Source: Semiconductor Engineering   Among gate-all-around FinFET topologies, nanosheets, as shown in Fig. 5, offer more "on" current and improved electrostatic control than FinFETs. In contrast, nanowires offer the greatest electrostatic control among various structures. There are two primary forms of FinFET technology based on structural and functional characteristics, as shown in Fig. 6, which are Bulk FinFETsSOI (silicon on insulator) FinFETs Fig. 6 Illustration of FinFET types a) Bulk FinFETs b) SOI (silicon on insulator). Source: MDPI Bulk FinFETs These FinFETs are built on bulk silicon and use fins etched directly onto the silicon substrate. They can perform well in sub-20 nm technology nodes while maintaining effective electrostatic control. The transition from planar MOSFETs to Bulk FinFETs is a relatively simple procedure because Bulk FinFETs closely resemble the traditional planar MOSFET structure. SOI (silicon on insulator) FinFETs These FinFETs are constructed on a silicon-on-insulator substrate, physically isolated fins that do not come into direct contact, allowing for better device isolation. Due to their reduced substrate coupling effects, SOI FinFETs can reduce parasitic capacitance and improve performance in high-speed applications. Applications FinFETs have a unique 3D structure and enhanced electrostatic control. In biosensing, they excel at detecting biomolecules like DNA and proteins through various configurations, including negative capacitance and junctionless designs, making them valuable for medical diagnostics. Their chemical sensing capabilities are used in gas detection (particularly H₂ and PH₃), pH measurement, and ion sensing, with specialized designs like ion-sensitive floating gate FinFETs achieving high sensitivity. In physical applications, they've found great use in temperature sensing, especially in quantum computing, where bulk FinFETs operating in the Coulomb blockade regime provide precise temperature measurements in cryogenic environments. Summarizing the Key Points FinFETs enhance transistor performance by minimizing short-channel effects, improving electrostatic control, and reducing leakage currents, which are important for sub-20 nm technology nodes in microchips.Gate-all-around FETs improve gate coupling and channel tuning, offering superior control over short-channel effects compared to traditional FinFET designs and enhancing overall device performance.The transition from planar MOSFETs to FinFETs represents a significant advancement in semiconductor technology, enabling higher density and speed in microchips while addressing miniaturization challenges. Reference Karimi, K., Fardoost, A., & Javanmard, M. (2024). Comprehensive review of FinFET Technology: history, structure, challenges, innovations, and emerging sensing applications. Micromachines, 15(10), 1187. https://doi.org/10.3390/mi15101187 Madhavi, K. B., & Tripathi, S. L. (2020). Strategic Review on different materials for FinFET Structure Performance Optimization. IOP Conference Series Materials Science and Engineering, 988(1), 012054. https://doi.org/10.1088/1757-899x/988/1/012054 Review on Fin Shape Channel Field Effect Transistor (FinFET)-Journal of Electronics Electromedical Engineering and Medical Informatics Gate-All-Around FET (GAA FET)-Semiconductor Engineering GAA Structure Transistors- Samsung

Introduction to RF TransistorsIn the world of electronic devices, transistors are one of the most fundamental components, serving as switches or amplifiers in a variety of circuits. Among the many types, RF transistors are specifically designed for handling radio frequency signals, making them essential in wireless communication systems, satellite links, and radar technology. Bipolar Junction Transistors (BJTs) are one of the most common types used in RF applications due to their high current gain and fast switching abilities. Whether you're an engineer, a hobbyist, or someone delving into RF design, understanding BJTs' role in radio frequency (RF) circuits can offer invaluable insights into building effective systems. What is a BJT?Bipolar Junction Transistors (BJTs) are semiconductor devices that consist of three layers of doped material, forming two junctions: an emitter-base junction and a collector-base junction. BJTs are classified into two types: NPN and PNP, which differ based on the polarity of the voltage applied to the junctions. In RF applications, BJTs function primarily as amplifiers. They convert low-power RF signals into higher-power ones, ensuring that the signal can travel longer distances or penetrate through barriers like walls. Their versatility in RF circuits is due to their inherent characteristics, including high frequency response, low noise, and high current handling. The Importance of RF BJTsIn RF circuit design, the right transistor can make a significant difference in the overall performance of the system. BJTs are particularly well-suited for this domain because of their ability to handle high frequencies and maintain stability across a wide range of temperatures. Here’s why BJTs are crucial: High Current Gain (β): In RF circuits, BJTs can amplify weak signals, which is essential in transmitting radio frequencies over large distances without distortion. Frequency Response: RF BJTs operate efficiently at high frequencies, typically in the range of MHz to GHz, making them ideal for applications such as mobile communications, radio broadcasting, and radar systems. Low Noise Performance: Noise is a major concern in RF circuits, especially in communication systems. BJTs are known for their low-noise characteristics, ensuring signal clarity even in noisy environments. Structure and Operation of RF BJTsAt the core of every BJT lies a combination of two p-n junctions. These junctions allow the BJT to operate as a current-controlled device. The primary regions of a BJT include the emitter, base, and collector: Emitter: The region that supplies carriers (electrons in NPN BJTs or holes in PNP BJTs).Base: A thin layer that controls the flow of carriers from the emitter to the collector.Collector: The region that collects carriers from the emitter and allows current to flow through the device.In an RF circuit, the transistor operates in its active mode, where the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased. This configuration allows a small base current to control a larger collector current, achieving the amplification needed in RF applications. The choice between NPN and PNP BJTs often depends on the specific circuit design. NPN BJTs are generally preferred in RF circuits due to their faster switching times and better efficiency at high frequencies. Key Specifications for Choosing an RF BJTSelecting the right BJT for an RF circuit requires careful consideration of several key parameters: Transition Frequency (f_T): This is the frequency at which the current gain of the BJT drops to 1. A high f_T value is crucial for RF applications, as it indicates that the transistor can operate efficiently at high frequencies. Power Dissipation: BJTs can generate significant heat, especially in high-power RF applications. Ensuring that the transistor can dissipate this heat effectively is essential for maintaining performance and longevity. Noise Figure: A low noise figure is critical in RF circuits, particularly in applications like communication receivers where signal clarity is paramount. BJTs with lower noise figures ensure less signal degradation. Collector-Emitter Voltage (V_CE): This rating indicates the maximum voltage that can be applied across the collector-emitter terminals without damaging the transistor. For RF applications, it's essential to choose a BJT that can handle the required voltage range. Current Gain (h_FE or β): The current gain determines how effectively the BJT can amplify the input signal. A higher β value means more amplification, which is particularly useful in RF amplification stages. Real-World Applications of RF BJTsRF BJTs play a vital role in many modern devices that rely on wireless communication. Some of their key applications include: Mobile Communication Systems: In cellular networks, BJTs amplify the radio signals transmitted between the base station and mobile devices, ensuring clear communication even over long distances. Broadcasting: Whether it's AM, FM, or television broadcasting, RF BJTs are used in the transmission of signals to reach a broad audience. Satellite Communication: In satellite uplinks and downlinks, BJTs amplify weak signals from space, allowing them to be clearly received on Earth. Radar Systems: RF BJTs are crucial in radar technology, amplifying the radio waves sent out to detect objects at long distances. RF Power Amplifiers: BJTs are frequently used in RF power amplifiers, which are critical in ensuring that the output signal is strong enough for effective transmission in devices like walkie-talkies, radio transmitters, and microwave communication systems. Design Considerations for RF Circuits Using BJTsWhen designing RF circuits that use BJTs, engineers must account for several design constraints to ensure optimal performance: Impedance Matching: Proper impedance matching between the BJT and other components in the RF circuit is essential to minimize power loss and maximize signal transfer. Stability: BJTs can exhibit unwanted oscillations at high frequencies. Engineers often use techniques like negative feedback or bypass capacitors to improve circuit stability. Thermal Management: Heat dissipation is a major concern in high-power RF circuits. Ensuring that the BJT operates within its safe temperature range is crucial to prevent damage and performance degradation. Biasing: Proper biasing of the BJT ensures that it operates in the correct region of its output characteristic, allowing for stable amplification. ConclusionRF transistors, particularly BJTs, are indispensable components in modern communication systems and other RF applications. Their ability to amplify weak signals, operate at high frequencies, and maintain low noise levels makes them ideal for a wide range of uses, from mobile communication to radar systems. By understanding the key characteristics of RF BJTs, selecting the right components, and designing circuits with care, engineers can create systems that perform efficiently and reliably. Whether you're working on a new RF design or optimizing an existing one, BJTs offer the versatility and performance needed for success.

Executive Summary: Transistors in 2026The semiconductor transistor remains the fundamental building block of modern electronics. As of January 2026, the industry has shifted toward Gate-All-Around (GAAFET) architectures at the 2nm process node, enabling AI chips like NVIDIA's Blackwell B200 to pack over 208 billion transistors. This guide updates legacy concepts with 2026 standards, covering operation modes, NPN/PNP switching circuits, and the latest market statistics approaching a $1 Trillion valuation.What is a Semiconductor Transistor in 2026?A semiconductor transistor is an active semiconductor device used to amplify, control, and generate electrical signals and power. It functions as a variable current switch capable of controlling output current based on input voltage. Unlike ordinary mechanical switches (such as relays), transistors use electrical signals to control their own opening and closing, allowing for switching speeds in the gigahertz (GHz) range—critical for modern 5G and AI applications.Key 2026 Insight: While traditional Bipolar Junction Transistors (BJTs) are still used in analog circuits, modern high-speed computing relies on GAAFET (Gate-All-Around Field Effect Transistor) technology, which has replaced FinFET at the 3nm and 2nm nodes to minimize power leakage.Video: Transistors Basics Explained Ⅰ How do Electrons and Holes Function in a Transistor?The transistor is a current-controlled device (BJT) or voltage-controlled device (FET) that facilitates signal amplification, oscillation, and modulation. Its operation relies on the movement of charge carriers: electrons (negative charge) and holes (positive charge carriers).A standard BJT has three terminals (Emitter, Base, Collector), three regions, and two PN junctions. Understanding the internal structure is key to grasping how 2026 hardware manages billions of switching operations per second.Figure 1. Transistor Structure (NPN Configuration)Movement of Charge Carriers:Figure 2. Movement of Charge CarriersHoles vs. Electrons: The hollow circles in Figure 2 represent positively charged holes, while solid dots are negatively charged electrons. "Hole movement" is effectively the macroscopic result of electrons filling vacancies.Emitter (E): Heavily doped to emit a large number of electrons. When forward-biased, it injects carriers into the base.Base (B): Very thin and lightly doped. In an NPN transistor, the P-type base allows most electrons from the emitter to diffuse directly to the collector, with very few recombining with holes (creating the small base current, IB).Collector (C): Large surface area designed to collect electrons drifting through the base. It dissipates the most heat, especially in power transistors used in 2026 EV inverters.Current Equation: IE (Emitter Current) = IC (Collector Current) + IB (Base Current).Ⅱ What are the Key Characteristics of Transistors?Transistors define the logic of all digital circuits. Their behavior is governed by the following core principles:1) Current Control (BJT): The small base current (IB) controls the large collector current (IC).NPN Current Direction: Base → Emitter.PNP Current Direction: Emitter → Base.2) Amplification Factor (β): Transistors amplify signals by a factor of β (Beta). If IB = 1mA and β = 100, then IC = 100mA. This principle amplifies weak sensor signals in IoT devices.3) Saturation (Switch ON): When IB is sufficient (e.g., ≥1mA for small signal transistors), the voltage drop Vce ≈ 0.3V. The transistor acts as a closed switch.4) Cutoff (Switch OFF): When Vbe < 0.7V (for Silicon), the transistor is fully off. Vce is high (equal to supply voltage), acting as an open switch.Design Tip for 2026: For NPN switching circuits, connect the load to the Collector and the Emitter to Ground (GND). For PNP, connect the Emitter to Power (VCC) and the load to the Collector. NPN is generally preferred in modern logic due to higher electron mobility compared to hole mobility. Ⅲ What are the Three Operational Regions of a Transistor?To effectively use a transistor in AI hardware or power regulators, one must understand its three operational states: Cut-off, Active, and Saturation.Figure 3. Transistor Circuit And Operational Regions(1) Cut-off Region (Digital "0"): The transistor is OFF. Ube < Threshold (0.7V). IB = 0, IC ≈ 0. The switch is open.(2) Active Region (Amplification): Used for analog signal processing (audio, radio). The Emitter junction is forward-biased, and the Collector junction is reverse-biased. IC = β * IB.(3) Saturation Region (Digital "1"): The transistor is fully ON. Both junctions are forward-biased. IC cannot increase further even if IB increases. Uce is minimal (~0.2V).In embedded systems and logic gates (like those in the newest 2nm chips), transistors toggle rapidly between Cut-off and Saturation, avoiding the Active region to minimize power loss.Figure 4. Voltage CharacteristicⅣ How to Analyze Input and Output Characteristics?4.1 Input CharacteristicsThe input characteristic curve relates the base current (IB) to the base-emitter voltage (VBE). It resembles the curve of a standard diode.Figure 5. Input CharacteristicWhen VCE increases, the collector's ability to "sweep" electrons improves, slightly reducing the recombination in the base. This shifts the curve to the right, meaning less IB flows for the same VBE.4.2 Output CharacteristicsThe output characteristic relates the collector current (IC) to the collector-emitter voltage (VCE) for various fixed values of IB.Figure 6. Output CharacteristicUnderstanding the Graph: The horizontal axis is VCE. The initial steep rise is the Saturation Region (switch closed). The flat horizontal lines represent the Active/Amplification Region, where IC is constant regardless of VCE (acting as a constant current source controlled by IB). Ⅴ What Causes Saturation and Cutoff Distortion?Signal distortion occurs when a transistor amplifier is improperly biased, causing the output waveform to be "clipped" at the top or bottom.5.1 Waveform Analysis of Basic Common Emitter Amplifier CircuitFigure 7. Waveform Analysis of Common-emitter Amplifier CircuitSaturation Distortion (Bottom Clipping): Occurs when the static operating point (Q-point) is too high. IB is too large, causing UCE to drop near 0V during the positive half-cycle of the input.Cutoff Distortion (Top Clipping): Occurs when the Q-point is too low. IB is too small, causing the transistor to turn OFF during the negative half-cycle of the input.5.2 Why use Transistors as Switches?Feasibility: The distinct "ON" (Saturation) and "OFF" (Cutoff) states allow transistors to replace mechanical switches. Modern SiC (Silicon Carbide) transistors can switch high voltages in EVs with minimal efficiency loss.Necessity: Microcontrollers (CPUs/MCUs) operate at low voltages (3.3V or 5V) and cannot directly drive high-power loads like motors or LED arrays. A transistor acts as the bridge, allowing a weak software signal to control massive power. Ⅵ How to Design Transistor Switching Circuits?6.1 Basic Switching Circuit of NPN TransistorsFigure 8. NPN Transistor Switch CircuitLow-Side Switching: In an NPN circuit, the Load (R1) is connected between VCC and the Collector. The Emitter connects to Ground. When the Base receives a High signal (e.g., 3.3V from a GPIO pin), current flows from C to E, turning the load ON.6.2 Basic Switching Circuit of PNP TransistorsFigure 9. Basic Switching Circuit of PNP TransistorHigh-Side Switching: Common PNP models like the 8550 are used here. The Emitter connects to VCC. The Load connects between the Collector and Ground. Logic: A LOW signal (0V) at the Base turns the PNP transistor ON. A HIGH signal turns it OFF. This is often used for driving buzzers or indicators where the ground path must remain common. Ⅶ Frequently Asked Questions About Transistors (2026 Update)1. How does a semiconductor transistor work?A transistor works by using a small control current at the Base (or voltage at the Gate) to regulate a much larger current flowing between the Collector and Emitter (or Source and Drain). This allows it to act as an amplifier or a high-speed electronic switch.2. How is a transistor used as a switch?The transistor operates as a solid-state switch by toggling between the Cutoff region (Open circuit, OFF) and the Saturation region (Short circuit, ON). It eliminates moving parts, allowing for billions of operations per second in modern CPUs.3. What is the PN junction of a transistor?A BJT contains two PN junctions. The Emitter-Base junction is forward-biased to inject carriers, while the Collector-Base junction is typically reverse-biased to collect them. These junctions form the potential barriers that control current flow.4. How many PN junctions are there in a transistor?2 PN JunctionsA Bipolar Junction Transistor (BJT) has two PN junctions (Base-Emitter and Base-Collector). Field Effect Transistors (FETs) rely on channel conductivity rather than junction injection.5. What are the two basic types of transistors?The two primary categories are Bipolar Junction Transistors (BJT) (current-controlled) and Field Effect Transistors (FET) (voltage-controlled). As of 2026, FETs (specifically MOSFETs and GAAFETs) dominate digital electronics.6. What are the terminals of a transistor called?For BJTs: Emitter, Base, and Collector. For FETs/MOSFETs: Source, Gate, and Drain.7. What is the difference between NPN and PNP?An NPN transistor turns ON with a positive current to the Base (High-Side control usually requires voltage > Emitter). A PNP transistor turns ON when the Base is pulled Low (voltage < Emitter). NPN is more common in switching applications due to better electron mobility.8. What is the most popular transistor in 2026?The MOSFET remains the most widely used transistor globally, accounting for 99.9% of all transistors. However, for cutting-edge AI chips (like NVIDIA Blackwell), GAAFET (Gate-All-Around) is the new standard, while SiC and GaN dominate power electronics in electric vehicles.{ "@context": "https://schema.org", "@type": "Article", "headline": "What is a Semiconductor Transistor? 2026 Comprehensive Guide", "datePublished": "2019-01-01", "dateModified": "2026-01-05", "description": "A deep dive into semiconductor transistors, covering electrons/holes, NPN/PNP characteristics, and 2026 industry standards like GAAFET and AI chip architectures.", "author": { "@type": "Organization", "name": "Kynix Semiconductor" }, "mainEntity": { "@type": "FAQPage", "mainEntity": [ { "@type": "Question", "name": "How does a semiconductor transistor work?", "acceptedAnswer": { "@type": "Answer", "text": "A transistor works by using a small control current at the Base (or voltage at the Gate) to regulate a much larger current flowing between the Collector and Emitter, effectively acting as an amplifier or switch." } }, { "@type": "Question", "name": "What are the two basic types of transistors?", "acceptedAnswer": { "@type": "Answer", "text": "The two main types are Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). 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Introduction As a power semiconductor device, IGBT(insulated-gate bipolar transistor) is widely used in the fields of rail transit, smart grid, industrial energy saving, electric vehicles and new energy equipment. It has the characteristics of energy saving, convenient installation and easy maintenance, and stable heat dissipation. It is the core device for energy conversion and transmission. A brief overview, IGBT can be said to be a combination of MOSFET(metal–oxide–semiconductor field-effect transistor) and BJT(bipolar junction transistor). That is, it combines the gate voltage control transistor (high input impedance) of the MOSFET, and uses the dual carriers of the BJT to achieve the purpose of large current (voltage-controlled bipolar device). So what is the internal structure of such a combination? This article will explain in detail with examples. What is IGBT and Its Applications Catalog Introduction Ⅰ IGBT Module Explained Ⅱ IGBT Internal Structure Ⅲ IGBT Internal Current Flow Ⅳ How to Disassemble IGBT Module? Ⅴ FAQ Ⅰ IGBT Module Explained The model of the IGBT module to be disassembled as an example is: FF1400R17IP4. The appearance and equivalent circuit of the module are shown in Figure 1. The length, width and height of this module are: 25cmx8.9cmx3.8cm. The module contains two IGBTs, which are what we often call half-bridge modules. The rated voltage and current of each IGBT are 1.7kV and 1.4kA. Figure 1. FF1400R17IP4 Part 8, 9, 10, 11, and 12 are power terminals and need to be connected to a power circuit.1, 2, 3, 4, and 5 are auxiliary control terminals, which need to be connected to the gate drive circuit.6 and 7 are NTC thermistors, used for temperature detection or over-temperature protection.After having a general understanding of its structure, what can we do with such a black module with this structure? Take an example around us: new electric vehicles, everyone should be familiar with it. Three such black modules can be used as a three-phase motor driver. If it is equipped with a battery, it can drive an electric bus. Of course, this module is also used in many other applications. Figure 2. IGBT in Electric Bus   Ⅱ IGBT Internal Structure After having a preliminary understanding of the external structure and application of the IGBT module, let us enter the subject of this article to see what the inside of this high-tech black module looks like. Figure 3 is the internal picture of the IGBT module with the black casing removed. It should be noted that the most common copper and aluminum are inside the IGBT module. Figure 3. IGBT Internal Structure Figure 4 is a cross-sectional view of the IGBT module. If the black casing and external connection terminals are removed, the IGBT module mainly contains 3 components, the heat dissipation substrate, the DBC substrate and the silicon chip (including the IGBT chip and the Diode chip), and the rest is mainly solder layers and interconnecting wires are used to connect IGBT chips, Diode chips, power terminals, control terminals and DBC(Direct Bond Copper). Below we will briefly introduce each part. Figure 4. IGBT Section View ① Heat Sink SubstrateThe bottom of the IGBT module is the heat dissipation substrate, the main purpose is to quickly transfer the heat generated by the IGBT switching process. Since copper has better thermal conductivity, the substrate is usually made of copper, and the thickness of it is 3-8mm. Of course, there are also substrates made of other materials, such as aluminum silicon carbide (AlSiC), both of which have their own advantages and disadvantages. ② DBCDBC (Direct Bond Copper) is a ceramic surface metallization technology, which contains 3 layers. Have a ceramic insulating layer in the middle and a copper clad layer above and below respectively, as shown in Figure 5(a). Simply put, it is to cover both sides of an insulating material with a copper layer, and then etch a pattern that can carry current on the front side, and the back side must be directly soldered to the heat sink substrate. Figure 5. BDC Base vs PCB The main function of DBC needs to ensure the electrical insulation capacity between the silicon chip and the heat dissipation substrate and good thermal conductivity, while also providing a certain current transmission capacity. The DBC substrate is similar to a 2-layer PCB circuit board. The insulating material in the middle of the PCB is generally FR4, while the commonly used ceramic insulating materials for DBC are aluminum oxide (Al2O3) and aluminum nitride (AlN).For the IGBT module analyzed in this article, there are 6 DBCs inside, and each has 4 IGBT chips and 2 Diode chips. Among them, 2 IGBT chips and 1 Diode chip are used as the upper tube, and the rest are used as the lower tube. As shown in Figure 6. Figure 6. DBC Diagram and Equivalent Circuit ③ IGBT ChipThe IGBT chip model used inside the module is: IGCT136T170. The manual can be downloaded from Infineon official website. Figure 7 shows the top view and basic parameters of the IGBT chip. The gate and emitter of the IGBT are above the chip (front side), and the collector is below (back side). The thickness of the chip is 200um. After the IGBT powers on, the current flows from bottom to top, so the IGBT of this structure can also be called a vertical device. Chip Type VCE ICn1) Die Size IGC136T170S8RH2 1700A 117.5A 17.72×7.7mm2 Figure 7. IGBT Chip Diagram If you make a vertical cut on the 200um chip, you can get the internal structure shown in Figure 8, which is a combination of P-type or N-type semiconductors with different doping. Figure 8 shows the well-known equivalent circuit of an IGBT, which is usually understood as a MOS-controlled PNP transistor. When start to learn about power electronics, you may feel that this picture is a bit strange. Why not draw the collector on the top and the emitter on the bottom? Until you understand that the IGBT current flows from bottom to top, it is not difficult to explain. Figure 8. IGBT Chip Structure and Equivalent Circuit Let’s have a general understanding of the electrical parameters of this IGBT chip. This chip can pass a DC current of 117.5A at 100°C. It can be seen from Figure 4 that a single IGBT device inside the module contains a total of 12 IGBT chips, so the total current is: 117.5*12=1412A, which is basically the same as the 1400A rated current in the IGBT module manual.In order to ensure the current sharing effect between IGBT chips, a 11.5Ω resistor has been integrated inside the gate of each chip. At the same time, considering the current sharing between the DBCs, the two chips on each DBC share a gate resistor externally, as shown in Figure 10. When measuring it with a multimeter, and the resistance is about 4.13Ω. You can calculate it in conjunction with Figure 9 to see if it is consistent with the 1.6Ω in the IGBT module manual. Of course, you can refer to the official manual for more detailed parameters of the IGBT chip. Figure 9. IGBT Equivalent Circuit ④ Diode ChipFigure 10 is a top view of the Diode chip, with the anode on the front and the cathode on the back. The current direction of the diode is from top to bottom, which is exactly the opposite of the current direction of the IGBT. The rated current of the diode chip is 235A, and each IGBT is composed of 6 diodes in parallel, and the total current can reach 1410A, which is basically the same as the 1400A in the module manual. The thickness of diode chip is the same as IGBT, it is also 200um. For more detailed parameters of the diode chip, please refer to the official manual. Chip Type VR IFn1) Die Size SIDC130D170H 1700A 235A 16.3×8mm2 Figure 10. Diode Diagram Such a thin semiconductor material can have kV voltage and hundreds of amperes of current on and off, it’s amazing. This is why the price of high-power semiconductor devices is so very expensive.The upper copper layer interconnection of IGBT chip, Diode chip and DBC is generally realized by bonding wires. Commonly used bonding wires are aluminum wire and copper wire. Among them, the aluminum wire bonding process is mature and the cost is low, but the electrical and thermodynamic properties of the aluminum wire bonding are poor, and the expansion coefficient mismatch is large, which affects the service life of the IGBT. The copper wire bonding process has the advantages of excellent electrical and thermodynamic properties, high reliability, and is suitable for modules with high power density and efficient heat dissipation.   Ⅲ IGBT Internal Current Flow After having a basic understanding of the internal structure of the IGBT module, let us go back and interconnect all the above components to see how the current flows inside the IGBT module. Here we take the upper tube IGBT in one of the DBCs as an example to illustrate the current flow. Red represents the current direction of the upper tube IGBT (S1 and S2), and blue represents the current direction of the diode D1. Figure 11(b) is a left cross-sectional view and a schematic diagram of the current direction of the module of Figure . Figure 11(a). IGBT Current Flow Figure 11(b). IGBT Current   Ⅳ How to Disassemble IGBT Module? Some friends may be curious about how to disassemble this module, but it is actually very simple. You only need to prepare two screwdrivers and a small hammer. Figure 12. IGBT Disassemble Step 1: Unscrew the 4 screws at the bottom of the IGBT module.Step 2: Use a flat-blade screwdriver to pry open all the terminals on the front of the IGBT module. This step is very important. It is necessary to ensure that all the terminals after being pried are vertical to the module substrate.Step 3: You need to fix the IGBT in one place, or use a flat-blade screwdriver to align any position of the connection between the plastic casing of the IGBT module and the substrate, hit the screwdriver with a hammer, and pry the casing from the substrate with the screwdriver. After prying open one position, place something on it, and then pry another position, repeat that, after slowly prying open, just pry open with your hands directly.   Ⅴ FAQ 1. What is IGBT module?An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. ... An IGBT power module functions as an electronic switching device. By alternate switching direct current (DC) can be transformed to alternating current (AC) and vice versa. 2. How does IGBT module work?The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. 3. What is the purpose of IGBT?The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input. 4. How many layers are there in IGBT?Working of IGBTIGBT is constructed with 4 layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we have the n+ layers. 5. Which are the terminals of IGBT?The three terminals of IGBT are Gate, Collector and Emitter. 6. How many terminals Mosfet has?four terminalsThe MOSFET has four terminals: drain, source, gate, and body or substrate. 7. What is the function of injecting layer in IGBT?The p+ substrate is also called injector layer because it injects holes into n- layer. The n- layer is called drift region. The next p layer is called the body of IGBT. The n- layer in between the p+ & p region serves to accommodate the depletion layer of pn- junction i.e. J2. 8. Can I replace IGBT with MOSFET?Due to the higher usable current density of IGBTs, it can usually handle two to three times more current than a typical MOSFET it replaces. This means that a single IGBT device can replace multiple MOSFETs in parallel operation or any of the super-large single power MOSFETs that are available today. 9. What are the three terminals of an IGBT and how does it function?The IGBT (insulated gate bipolar transistor) is a three-terminal electronic component, and these terminals are termed as emitter (E), collector(C) and gate(G). Two of its terminals namely collector and emitter are associated with a conductance path and the remaining terminal 'G' is associated with its control. 10. What is an IGBT describe its construction?IGBT – Working, Types, Structure, Operation & Applications. ... The IGBT (Insulated Gate Bipolar Transistor) takes the best parts of both BJT and MOSFET into a single transistor. It takes the input characteristics (high input impedance) of MOSFET (Insulated Gate) and the output characteristics of BJT (Bipolar nature). 11. How does IGBT convert DC to AC?The IGBT act as a switch (when a signal is applied to the gate, they turn on and then turn off when the signal is removed). By closing Q1 and Q4, a positive d.c. supply is applied to the load. Q2 and Q3 will result in a negative d.c. supply across the load. 12. What is the advantage of IGBT?The main advantages of IGBT over a Power MOSFET and a BJT are: It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced. 13. What is drift layer in IGBT?The drift region (electric field or movement of charge) of the IGBT works as a base of the PNP transistor . The current gain of the transistor depends upon the width and doping level of the transistor. 14. What is the structure of IGBT?The structure of IGBT is very much similar to that of PMOSFET, except one layer known as injection layer which is p+ unlike n+ substrate in PMOSFET. This injection layer is the key to the superior characteristics of IGBT. Other layers are called the drift and the body region. The two junctions are labeled J1 and J2. 15. What are the advantages of IGBTs?Advantages of IGBT:Simple drive circuitLow on-resistanceHigh voltage capacityFast switching speedEasy of driveLow switching lossLow on stage power dissipationLow gate drive requirement 16. Why IGBT is very popular nowadays?With its lower on-state resistance and conduction losses as well as its ability to switch high voltages at high frequencies without damage makes the Insulated Gate Bipolar Transistor ideal for driving inductive loads such as coil windings, electromagnets and DC motors. 17. Why diode is used in IGBT?We know that MOSFET or IGBT is a unidirectional device, they only conduct current in forward bias and block the current in reverse bias. ... For this reason, an external diode is connected across the MOSFET or IGBT or SCR to provide a path for reverse current.

Executive Summary: What is a Phototransistor?A phototransistor is a light-sensitive semiconductor device that converts incident light into electric current while providing internal gain amplification. Unlike simple photodiodes, phototransistors utilize a bipolar junction structure (NPN or PNP) to amplify the signal, making them highly effective for optical switching, object detection, and encoding systems in modern 2026 electronics.Ⅰ Introduction to PhototransistorsThe phototransistor is a specialized semiconductor device engineered to detect light levels and modulate the current flowing between the emitter and collector based on the photon intensity it receives.While both phototransistors and photodiodes serve as optical sensors, the phototransistor distinguishes itself through high sensitivity attributed to the internal gain of its bipolar transistor architecture. As of 2026, this intrinsic amplification makes phototransistors the preferred choice for applications requiring robust signal detection without complex external amplification circuitry.Ⅱ Video Tutorial: How Phototransistors WorkVisual learners can understand the practical operation of light detection in the following tutorial.Phototransistor Tutorial Phototransistor Video Description:A comprehensive tutorial demonstrating how to utilize phototransistors for precise light detection in circuit design.  Ⅲ What Is a Phototransistor?A phototransistor is an electronic switching and current amplification component that operates by converting photon energy into electrical signals. When light strikes the exposed base-collector junction, a reverse current flows proportional to the luminance intensity.Widely used to convert light pulses into digital electrical signals, these components are powered by light interactions rather than solely electrical bias at the base. They offer high gain and low cost, making them ubiquitous in 2026 consumer electronics. Figure 1: Phototransistor SymbolFunctionally, phototransistors share similarities with photoresistors (LDRs), but with a key distinction: phototransistors generate current and voltage through the photovoltaic effect and amplification, whereas LDRs only change resistance.Transistors with the base terminal exposed are chemically doped to maximize light sensitivity. Photons striking the depletion layer generate electron-hole pairs, activating the transistor just as a base current would in a standard BJT. Silicon-based photosensors typically respond to visible and near-infrared radiation (approx. 400nm to 1100nm). Ⅳ How are Phototransistors Constructed?The phototransistor's structure is specifically optimized for photo-applications by maximizing the area of the base-collector junction. While ordinary bipolar transistors exhibit some photosensitivity, phototransistors feature significantly larger base and collector areas to capture maximum light flux.Figure 2: Construction of a PhototransistorⅤ Semiconductor Material EvolutionHistorical phototransistors utilized a homo-junction structure, fabricated entirely from germanium or silicon. In contrast, modern 2026 phototransistors often employ type III-V semiconductor materials, such as gallium arsenide (GaAs), to target specific wavelengths and increase efficiency.Key structural variations include:NPN Topology: The most popular configuration due to the higher mobility of electrons compared to holes.Heterostructures: Utilizing different materials on either side of the PN junction to enhance conversion efficiency.Mesa Structure: A common physical layout for optimized light absorption.Schottky Junctions: Occasionally used for the collector to improve switching speeds.To ensure optimal sensitivity, the emitter contact is frequently offset, preventing it from blocking light from reaching the active region. Ⅵ How Does a Phototransistor Work?A phototransistor operates by using light to control the flow of current, effectively replacing the base current of a standard transistor with photon energy.Biasing: The collector is biased positively relative to the emitter (in NPN), creating a reverse-biased Base-Collector (B-C) junction.Injection: Light strikes the B-C junction, generating electron-hole pairs.Amplification: The movement of these carriers constitutes a base current, which the transistor amplifies by its gain factor (hFE).Typically, the physical base terminal is left unconnected (floating), as the device is controlled entirely by incident light. Ⅶ Key Electrical CharacteristicsSince phototransistors are essentially Bipolar NPN Transistors with an exposed junction, their V-I characteristics resemble a standard BJT family of curves, but with Light Intensity (mW/cm²) replacing Base Current (IB).Dark Current: When no light is present, a minuscule leakage current flows from collector to emitter. In high-precision applications, minimizing this Dark Current is crucial.Light Current: As light intensity increases, the base current rises, triggering the amplification process. Figure 3: Reverse Bias Configuration The collector current characteristics curve below demonstrates the linear relationship between light intensity and output current in the active region.Figure 4: Collector Current vs. Irradiance Ⅷ Selection Criteria & PropertiesWhen selecting a component for 2026 designs, engineers must evaluate specific properties to ensure the device matches the optical environment.Critical Datasheet Properties:Peak Wavelength: The specific color of light (e.g., 850nm IR vs. 560nm Visible) the device is most sensitive to.Linearity: How accurately the output follows the input light intensity.Sensitivity: The ratio of output current to incident light power.Response Time: The rise and fall time, which determines the maximum data rate (typically slower than photodiodes).Acceptance Angle: The field of view from which the sensor can detect light. Ⅸ Common Types: BJT vs. FETPhototransistors are primarily categorized by their internal transistor architecture:BJT Phototransistor: The standard type. In darkness, it leaks only ~100 nA. Under illumination, it can conduct up to 50mA. This high current handling capability distinguishes it from photodiodes.Photo-FET (Field Effect Transistor): Utilizes light to generate a gate voltage that controls the drain-source current. Photo-FETs offer extremely high input impedance and are more sensitive to weak light signals, though they are less common in general switching applications. Ⅹ Practical Circuit Examples (2026 Applications)The primary goal of phototransistor circuits is to generate a usable output voltage from light-induced current. Unlike photodiodes which often require Transimpedance Amplifiers (TIA), phototransistors have built-in gain, allowing for simpler circuit designs.Common Configurations:Common-Emitter (Inverting): Output voltage drops as light increases.Common-Collector (Non-Inverting): Output voltage rises as light increases.Figure 5: Basic Amplifier Configurations 10.1 Step-by-Step Circuit Implementations 1. Light Operated Relay (Automatic Day Switch)Mechanism: When light strikes phototransistor Q1, it conducts, supplying base current to the driver transistor Q2. Q2 then activates the mechanical relay, turning on the connected load. 2. Darkness Operated Relay (Night Light)Mechanism: By inverting the logic, the relay activates only when light is absent. In darkness, the phototransistor turns off (high resistance), allowing the bias resistor to trigger Q2. 3. Light Interruption Alarm (Security System)Mechanism: This circuit functions as a tripwire. Under normal conditions (laser/light hitting sensor), the phototransistor pulls the SCR gate LOW (off). When the beam is broken by an intruder, the gate voltage rises, latching the SCR and sounding the alarm until manually reset. Ⅺ Datasheet Specifications to WatchTo ensure system reliability, consult the following parameters in manufacturer datasheets:Collector Current (IC): Maximum current the device can handle (typically 1mA - 50mA).Dark Current (ID): Leakage current in total darkness (lower is better for precision).Peak Wavelength (λp): The wavelength of maximum sensitivity.VCE(sat): Collector-Emitter saturation voltage.Rise/Fall Time (tr/tf): Critical for optical data transmission applications.Power Dissipation (Ptot): Thermal limits of the package. ⅻ Pros and Cons AnalysisSelecting the right optical sensor requires balancing sensitivity, speed, and cost.AdvantagesDisadvantagesHigh Gain: Produces higher current output than photodiodes, reducing the need for external amplifiers.Limited Voltage: Cannot withstand high voltages compared to Thyristors or Triacs.Cost-Effective: Inexpensive to manufacture and integrate into ICs.Slower Speed: Slower response time (lower bandwidth) compared to PIN photodiodes.Simplicity: Can drive small relays or logic gates directly in simple circuits.Temperature Sensitivity: Dark current increases significantly with temperature fluctuations. XIII Modern Applications in 2026Due to their versatility, phototransistors are integral to many modern technologies:Optocouplers (Optoisolators): Protecting low-voltage logic circuits from high-voltage spikes in power supplies.Optical Encoders: Used in robotics and motors to detect position and speed.Object Detection: Proximity sensors in smartphones and automated manufacturing lines.Safety Systems: Smoke detectors and light curtain barriers for industrial machinery.Remote Control Receivers: IR detection for consumer electronics (though often integrated with demodulators). XIV Comparison: Photodiode vs. PhototransistorWhile both detect light, their use cases differ based on speed and sensitivity needs.FeaturePhotodiodePhototransistorOutputLow Current (µA)High Current (mA) - AmplifiedResponse SpeedVery Fast (Nanoseconds)Moderate (Microseconds)ApplicationsFiber Optics, High-Speed DataRemote Controls, Light Switches, EncodersNoiseLow NoiseHigher Noise levels XV Frequently Asked Questions1. What type of device is a phototransistor?A phototransistor is a bipolar semiconductor device. It functions as a transistor where the base current is generated by incident photons striking the exposed semiconductor junction, rather than an electrical connection.2. What is the main difference between a standard transistor and a phototransistor?Physically, the primary difference is the packaging. A phototransistor has a transparent lens or window to allow light to reach the junction, and it often lacks an external base pin. Electrically, it is controlled by light intensity rather than input current.3. Is a phototransistor considered a sensor?Yes, it is a discrete photosensor. It detects the presence and intensity of light and converts it into a measurable electrical signal.4. How do you test if a phototransistor is working?You can test it using a multimeter or a simple circuit:Connect the phototransistor in series with a resistor and LED to a power source (checking polarity).Expose the sensor to light; the LED should brighten.Cover the sensor; the LED should dim or turn off.5. Which is better: Photodiode or Phototransistor?Neither is universally "better"; it depends on the application. For high-speed data (like fiber optics), a photodiode is superior. For switching and sensing without extra amplifiers, a phototransistor is more efficient due to its internal gain.{ "@context": "https://schema.org", "@graph": [ { "@type": "Article", "headline": "Phototransistors: The Ultimate 2026 Guide", "datePublished": "2021-12-02", "dateModified": "2026-01-07", "description": "A comprehensive guide to phototransistors, covering construction, working principles, circuit diagrams, and 2026 applications.", "image": "https://www.kynix.com/editor_u/image/20211202/2021120216390176.jpg", "author": { "@type": "Organization", "name": "Kynix Electronics" } }, { "@type": "FAQPage", "mainEntity": [ { "@type": "Question", "name": "What type of device is a phototransistor?", "acceptedAnswer": { "@type": "Answer", "text": "A phototransistor is a bipolar semiconductor device where the base current is generated by incident photons striking the exposed junction." } }, { "@type": "Question", "name": "What is the difference between a transistor and a phototransistor?", "acceptedAnswer": { "@type": "Answer", "text": "The main difference is that a phototransistor has an exposed optical window and is controlled by light intensity, whereas a standard transistor is controlled by electrical current at the base pin." } }, { "@type": "Question", "name": "Is a phototransistor a sensor?", "acceptedAnswer": { "@type": "Answer", "text": "Yes, a phototransistor is a discrete photosensor that converts light intensity into an electrical signal." } }, { "@type": "Question", "name": "Which is better: Photodiode or Phototransistor?", "acceptedAnswer": { "@type": "Answer", "text": "Photodiodes are better for high-speed data applications, while phototransistors are better for switching and sensing applications requiring higher sensitivity and gain." } } ] }, { "@type": "HowTo", "name": "How to Build a Simple Light Interruption Alarm", "step": [ { "@type": "HowToStep", "name": "Setup the Phototransistor", "text": "Connect the phototransistor to a pull-down resistor to create a voltage divider." }, { "@type": "HowToStep", "name": "Connect the SCR", "text": "Connect the output of the phototransistor junction to the Gate of an SCR (Silicon Controlled Rectifier)." }, { "@type": "HowToStep", "name": "Align the Light Source", "text": "Point a laser or light beam directly at the phototransistor. This keeps the SCR gate low (Off)." }, { "@type": "HowToStep", "name": "Trigger the Alarm", "text": "Interrupt the light beam. The phototransistor turns off, voltage spikes at the SCR gate, latching the alarm on." } ] } ]}

Introduction The transistor is a current-control device. For example, control the collector-emitter current by changing the base current. In a general voltage amplification occasion, this amplification effect comes from the use of resistors to convert current into voltage. In the small-signal model, the source of the base current is the ratio of the input voltage to the base-emitter dynamic resistance rbe, which is usually kΩ. So the base current is very small, and may only be a few tenths of mA. Through the amplification of the transistor, the base current is generated between the collector and the emitter by β times. This article will introduce how transistor works in the common-emitter amplifier circuit. Transistor Amplifiers Circuit Introduction Catalog Introduction Ⅰ Common-emitter Amplifier Circuit Formula Ⅱ Common-emitter Amplifier Circuit Design 2.1 Design Steps 2.2 Circuit Analysis 2.3 Common-emitter Circuit Design 2.4 Circuit Performance Parameters Ⅲ Common-emitter Amplifier Circuit Expansion 3.1 Increase Magnification 3.2 Low-voltage and Low-loss Circuit 3.3 Differential Output Circuit 3.4 Filter and Tuning Amplifier Circuit Ⅳ Summary Ⅴ FAQ Ⅰ Common-emitter Amplifier Circuit Formula Here, take the common emitter amplifier circuit as an example: Figure 1. Transistor Common-emitter Amplifier Circuit △Vo=VCC-△ieRc=VCC-β△ibRc=VCC-△Vi·Rc/rbe△Vi/rbe=△ibThus, the collector generates a current of β times ib:△ie=β△ibFurthermore, the output voltage can be obtained by the relative positive power supply potential:△Vo=VCC-△ieRc=VCC-β△ibRc=VCC-△Vi·Rc/rbeThus, we can get an inverted amplified voltage signal by AC coupling and controlling the collector resistance Re. But generally the emitter will have a resistance to control the gain, so the above formula is not practical. When designing a circuit in non-extreme situations, we often hope that the circuit can work with most general-purpose transistors, avoiding the parameter that depends on component parameters such as rbe. At the same time, it is very cumbersome to consider the base current in the specific calculation. Therefore, in the general design process, the existence of the base current is ignored in an approximate calculation (In some circuits, although the base current is ignored, it is still necessary to give the base a certain current drive to make the circuit working normally). In addition, the calculation of gain is the external circuit resistance not the rbe.Among them, the base-emitter tube voltage drop VBE is also a very important parameter, which is generally equal to 0.6V (silicon tube). The parameters of the transistor circuit can all be obtained according to VBE=0.6V and Ohm's law.The cumbersome part of the transistor circuit lies in the setting of the static operating point. Usually, careless design will cause clipping and distortion of the output waveform. Therefore, the selected values of some experimental values can be used for reference. The overall design idea is: quantitatively determine the voltage and current to calculate the resistance.   Ⅱ Common-emitter Amplifier Circuit Design The common-emitter amplifier circuit is a typical inverting amplifier, which has a wide range of applications and stable effects. First show the overall design ideas, and then explain the purpose and principles of the design in steps. 2.1 Design Steps 1) Determine the supply voltage VCC, and determine the static emitter current IE according to the frequency curve/noise curve/others.2) Determine VE, where selects 1~2V to absorb temperature drift.3) According to VE and IE, calculate the emitter static resistance RE ( IE≈IC).4) Determine the magnification Av, and apply the relationship Av=RC/RE to calculate the static collector resistance RC. At this point, the static working point has been established.5) Check whether the static operating point meets the requirements: positive output swing limit=VCC-IE·RC, negative output swing limit=IE·RC-VE. It is necessary to ensure that the amplified output voltage does not exceed the swing limit (usually the swing limit is larger). If RC is too large, there will be a downside clipping, so is the small RC. In addition, determine whether the power exceeds the limit: PC=VCE·IC.6) Determine the base bias voltage as follows: According to VBE=0.6V, it is easy to get VB=VE+0.6 (divide the voltage from the power supply through the resistor). Since ib is considered to be small and negligible, the current IB0 flowing through the base voltage divider resistors (R1, R2 in the above figure) should be much larger than ib. ib is approximately calculated as IC/β, and IB0 is about an order of magnitude larger than ib, so R2=VB/IB0, R1=(VCC-VR2)/IB0.7) Finally, determine the AC coupling capacitor value and the power supply decoupling capacitor value.Let's first use a designed common-emitter amplifier circuit to intuitively understand the waveforms of the next parts: Figure 2. Transistor Common Emitter Amplifier Circuit Design As shown in the figure, the circuit uses 2SC2240 tube, 15V power supply, and the input and output are AC coupled. The output signals are as following:  Figure 3. 4-channel Signal Waves The pale blue waveform is the input signal, selecting the sine wave of 1kHz, 1Vpp.The green is the output signal, amplified by about 5 times, and it is inverted.The blue is the base signal, which can be seen because the DC level is raised due to the influence of the base bias resistance.The red is the emitter signal, which is only a fixed value away from the base signal.   2.2 Circuit Analysis First, perform a DC analysis, that is, determine the static operating point. In the initial design process, the design and verification of static operating points are also the first to proceed. The static potential of the base can be easily calculated according to the base bias resistance, and the static potential of the emitter can be determined according to the voltage drop of the base-emitter tube as a constant. Therefore, according to the magnitude of the emitter resistance, the magnitude of the collector-emitter current can be obtained, and then the collector static potential can be obtained from the power supply voltage.Why is the static operating point important? Take the NPN transistor as an example, which is equivalent to two back-to-back diodes. If requiring the diode work, you must give it a proper bias to make it reasonably conductive. In the circuit, the base-collector diode prevents internal feedback, and the base-emitter diode is the key to achieving amplification. In other words, it is enough to design an external circuit so that the current flows normally in the base-emitter diode. This idea will be mentioned in the analysis of the carrying capacity of the emitter follower.Find the AC voltage gain. When the input voltage changes △vi, it will cause the emitter current to produce an AC change △ie. Since the base emitter voltage drop is constant, it does not contribute to the AC change, so △ie=vi/RE. Therefore, the emitter AC output voltage can be determined as vo=△ieRC=vi·RC/RE, and the AC gain is Av=RC/RE. This conclusion can quickly analyze the magnification of the common-emitter circuit.The output power rails are VCC and VE respectively, which are determined by the current characteristics of the transistor during operation, and there is generally no rail-to-rail output. According to the output power rail and the AC amplification factor, the circuit can be used.When the input and output are not AC coupled, the input (especially for DC) will cause the output waveform to be distorted.   2.3 Common-emitter Circuit Design After understanding the circuit characteristics, you can design the common emitter circuit according to the design steps at the beginning of this section. The static operating point and magnification have been determined during the analysis, and the other parts are designed below.Supply voltage: According to the swing of the output voltage, we can determine the size of the voltage. Usually the power supply voltage is larger than the output peak-to-peak value.Transistor: Select the appropriate transistor according to the operating frequency, required power, noise level and β, etc.Emitter current: Determine the size of the emitter current according to the frequency characteristics by consulting the device manual.RC and RE: Determined by the emitter voltage and current, and the magnification, pay attention to review the upper and lower limits of the swing and the rated power.Base bias resistance: VB is determined according to VE, thereby determining the voltage divider resistance of the power supply. Note that the current flowing through the voltage divider resistor should be one to two orders of magnitude higher than the base current. The base current is calculated by dividing the collector-emitter current by β.Coupling capacitor: The AC coupling capacitor is generally 10uF. Note that the coupling capacitor of the output stage and the input impedance of the next stage will form a high-pass filter. The cutoff frequency of the filter should be handled carefully.   2.4 Circuit Performance Parameters Through the method of AC analysis, we can obtain some characteristic parameters of the designed circuit, such as input and output impedance, magnification and so on.Input impedance: According to AC analysis, the input impedance is the parallel value of the base bias resistance. In small signal analysis, the base emitter dynamic resistance rbe should also be connected in parallel.Output impedance: The method to determine the output impedance is to add a load to the circuit. When the peak-to-peak output value drops to half of the no-load, the load impedance is the output value. Generally, the output impedance of the common-emitter amplifier circuit is the collector resistance RC.Magnification: Due to the influence of the base current, the actual magnification is about 10% lower than the design value. So the design formula is more practical.   Ⅲ Common-emitter Amplifier Circuit Expansion By improving the general common-emitter amplifier circuit, various application circuits with other characteristics can be obtained. This section introduces the means to increase the magnification, the low-voltage power supply circuit, the differential output circuit, and the tuning amplifier circuit. 3.1 Increase Magnification According to the introduction of the design circuit, the voltage gain is mainly determined by the ratio of the collector resistance RC to the emitter resistance RE. So it is common to change the ratio of the resistance to change the gain. However, the problem arises: these two resistors are responsible for determining the working current at the same time. Because the DC operating point is changed arbitrarily, the circuit is likely to be distorted or even not work.From another perspective, voltage gain belongs to the category of "AC Analysis", and the static operating point belongs to "DC Analysis". So add some reactive components to the circuit to change the ratio under the AC perspective, the resistance value during DC analysis does not change.This can be achieved by connecting the emitter resistor in parallel, or making the resistor in parallel with the capacitor, that is, modifying the circuit in the first section: Figure 4. Common-emitter Amplifier Circuit Pay attention to the emitter in the above figure. In the AC analysis, the resistor R4 is short-circuited by the capacitor. At this time, it is equivalently considered that the emitter resistor is only R7 (330Ω). From the signal source and the oscilloscope, the signal has been amplified nearly 50 times at this time. It is much larger than the original design value (10k/2k=5), thus realizing the expansion of voltage gain. If the original emitter resistance is not split, but the entire capacitor is connected in parallel, the maximum gain βRC/rbe will be obtained at this time.How to choose the capacitance value? It should be noted that after the capacitors are connected in parallel, the entire circuit will have high-pass characteristics, and the cut-off frequency is f=1/2πRC. If this high-pass characteristic is not required, the C capacitance value can be selected to a larger value between 47uF~100uF.In addition, the capacitor C6 has the function of temperature compensation. 3.2 Low-voltage and Low-loss Circuit If the op amp circuit is powered by a dry battery (1.5V), it is not realistic, but the transistor circuit can be done. The key is to use the conduction voltage drop of the external diode to offset the base-emitter voltage and have small small. The circuit in the figure below can still amplify small signals as designed even under 1.5V power supply: Figure 5. Common-emitter Amplifier Circuit But the disadvantage is that the maximum voltage of the system is always below the supply voltage. Because of the small circuit loss, it is suitable for low power consumption. 3.3 Differential Output Circuit Fully differential op amps can provide dual-mode output, and many transmission lines also require differential transmission. Transistor circuits can also perform differential output. In addition to the principle of a common emitter amplifier circuit, the principle of an emitter follower is also used. The following figure shows the circuit connection of the differential output. Figure 6. Common-emitter Amplifier Circuit It can be seen that two differential signals with the same shape and opposite phase are output. The collector signal is in phase with the input signal, and the emitter output signal is in phase with the input signal. However, the output impedance of the two signals is different due to the different lead-out positions. The output impedance of the inverted output is higher (RC), and the output impedance of the non-inverted output is lower, which is suitable for driving the load. The inverted output is generally connected to the emitter follower before driving.In addition, the static potential of the base should be set between VCC and GND as much as possible to expand the undistorted output range.   3.4 Filter and Tuning Amplifier Circuit The introduction of reactive components in the circuit will cause the properties of the circuit to change with the frequency. We can use this property to design LPF, HPF, and tuning amplifier commonly used in high-frequency circuits. Actually, it uses the characteristic that the impedance of the reactance element changes with the frequency, and then changes the voltage gain at the current frequency. The impedance at the resonance frequency is often purely resistive and has an extreme value to achieve frequency selective amplification. The following show low-pass, high-pass and frequency selective amplifiers at specific frequencies:① LPF Figure 7. Common-emitter Amplifier Circuit As shown in the figure, a low-pass filter is constructed (the input of the bode tester is placed at the base instead of the output of the signal generator, because the input coupling capacitor will form a high-pass filter with the input resistor, which affects the observation effect), and its cut-off frequency is about 1.06kHz, calculated by f=1/2πRcC.From the sinusoidal steady-state analysis, the impedance of the RC parallel loop is R/√(1+(wRC)^2). As the frequency increases, the impedance decreases, so the voltage gain decreases, forming a low-pass characteristic.② HPF Figure 8. Common-emitter Amplifier Circuit As shown in the figure, a high-pass filter is constructed, and the calculation of its cut-off frequency is similar to that of LPF.At the gain peak point, the voltage gain reaches 50dB, which is close to the β value of the transistor. Then the gain is attenuated due to the deterioration of the transistor's frequency characteristics.③ 10.7MHz Figure 9. Common-emitter Amplifier Circuit By replacing RC with an LC network with a resonance frequency of 10.7MHz, a frequency selective amplifier can be obtained. As shown in the figure, the amplification factor is 35dB at 10.7M, while the amplification factor when detuning 1MHz is only 12.6dB. The disadvantage is that the pass-band is slightly wider, the rectangular coefficient is not good enough, and the equivalent quality factor of the loop is about 65.2, which is relatively large. In addition, the high-frequency decoupling capacitor has been changed to 1uF. Resonant Amplifier Circuit Example: Figure 10. Resonant Amplifier Circuit Example   Ⅳ Summary Transistor amplifier circuit is the basis of an operational amplifier circuit, and common-emitter configuration is the most commonly used form. Drawing lessons from the feature that the amplifier's magnification can be easily determined by the ratio of two resistors, and the gain of the common emitter amplifier can also be approximated by the ratio of the two resistors.   Ⅴ FAQ 1. What are transistor amplifiers used for?Amplifiers are derived from the transistors because they are capable of operating under three regions active, cut-off and saturation. For the purpose of amplification, the focus will be on the active region. The main purpose of these amplifiers is to enhance the strength of the applied input signal without alteration. 2. How does a transistor amplify current?Transistors are normally used as amplifiers. ... The small current travels from the voltage source into the base of the transistor. A current at the base turns on the transistor. The current is then amplified and travels from the emitter of the transistor to the collector. 3. What is a common emitter transistor amplifier?The common emitter amplifier is a three basic single-stage bipolar junction transistor and is used as a voltage amplifier. The input of this amplifier is taken from the base terminal, the output is collected from the collector terminal and the emitter terminal is common for both the terminals. 4. Why common emitter is used in amplifier?Common emitter (CE) configuration. ... Common emitter transistors are used most widely, because a common emitter transistor amplifier provides high current gain, high voltage gain and high power gain. This type of transistor gives for a small change in input there is small change in output. 5. What is the use of CE amplifier?In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier. It offers high current gain (typically 200), medium input resistance and a high output resistance. 6. How does transistor work as amplifier?A transistor acts as an amplifier by raising the strength of a weak signal. The DC bias voltage applied to the emitter base junction, makes it remain in forward biased condition. ... Thus a small input voltage results in a large output voltage, which shows that the transistor works as an amplifier. 7. What is common emitter amplifier circuit?The Common Emitter Amplifier circuit has a resistor in its Collector circuit. The current flowing through this resistor produces the voltage output of the amplifier. ... The Base of the transistor used in a common emitter amplifier is biased using two resistors as a potential divider network. 8. What are the main parts of a transistor amplifier circuit?A Single stage transistor amplifier has one transistor, bias circuit and other auxiliary components. The following circuit diagram shows how a single stage transistor amplifier looks like. When a weak input signal is given to the base of the transistor as shown in the figure, a small amount of base current flows. 9. What is the phase difference in common emitter amplifier?The phase difference between the input and output voltage of CE amplifier circuit is. The phase difference of 1800 between the signal voltage and output voltage in a common emitter amplifier is known as phase reversal. 10. When an NPN transistor is used as an amplifier?For a npn transistor to be used as an amplifier, forward bias has to be applied on the transistor. Thus, when an npn transistor is used as an amplifier, holes move from base to emitter. So, the correct answer is option D i.e. holes move from base to emitter. 11. When an NPN junction transistor is used as an amplifier in CE mode?A transistor is used in the common emitter mode as an amplifier then: (A) the base emitter junction is forward baised. (B) the base emitter junction is reverse baised. (C) the input signal is connected in series with the voltage applied to bias the base emitter junction. 12. How is an NPN transistor used as an amplifier show with its circuit diagram?The circuit of a common-emitter amplifier using an n-p-n transistor is shown below : In a common emitter amplifier circuit, the input signal voltage and output collector voltage are in opposite phase. i.e 180° out of phase. Thus the phase difference between the input signal and output voltage is 180°. 13. How does a common emitter amplifier work?Operation of Common Emitter AmplifierWhen a signal is applied across the emitter-base junction, the forward bias across this junction increases during the upper half cycle. This leads to an increase in the flow of electrons from the emitter to a collector through the base, hence increases the collector current. 14. What is β for a CE configuration?Base Current Amplification Factor (β)The base current amplification factor is defined as the ratio of the output and input current in a common emitter configuration. In common emitter amplification, the output current is the collector current IC, and the input current is the base current IB. 15. What is current gain CE configuration?The current gain of a transistor in CE configuration is defined as the ratio of output current or collector current (IC) to the input current or base current (IB). The current gain of a transistor in CE configuration is high. Therefore, the transistor in CE configuration is used for amplifying the current.