The Kynix Components

Catalog Description Related Video Instruction CAD Models Pin Configuration Block Diagram Features Applications Datasheet Specifications Manufacturer Using Warning FAQ Description The MAX038 is a high-frequency, precision function generator producing accurate, high-frequency triangle, sawtooth, sine, square, and pulse waveforms with a minimum of external components. The output frequency can be controlled over a frequency range of 0.1Hz to 20MHz by an internal 2.5V bandgap voltage reference and an external resistor and capacitor. The duty cycle can be varied over a wide range by applying a ±2.3V control signal, facilitating pulse-width modulation and the generation of sawtooth waveforms. Frequency modulation and frequency sweeping are achieved in the same way. The duty cycle and frequency controls are independent.   Sine, square, or triangle waveforms can be selected at the output by setting the appropriate code at two TTL-compatible select pins. The output signal for all waveforms is a 2VP-P signal that is symmetrical around ground. The low-impedance output can drive up to ±20mA.   The TTL-compatible SYNC output from the internal oscillator maintains a 50% duty cycle—regardless of the duty cycle of the other waveforms—to synchronize other devices in the system. The internal oscillator can be synchronized to an external TTL clock connected to PDI.   Related Video Instruction Video: Function/Waveform Generator MAX038 Video Description: In this episode of DIY or Buy we will have a short look at commercial function/waveform generators in order to determine what features are important for a DIY version. Afterwards I will then show you how to create a simple function generator, the analog and digital way. At the end I will then present you a DIY DDS function generator design which can (kind of) hold up to the commercial versions.   CAD Models   Figure: PCB Symbol     Figure: Footprint   Pin Configuration   Figure: Pin Configuration   Block Diagram   Figure: Block Diagram   Features 0.1Hz to 20MHz Operating Frequency RangeTriangle, Sawtooth, Sine, Square, and PulseWaveformsIndependent Frequency and Duty-CycleAdjustments350 to 1 Frequency Sweep Range15% to 85% Variable Duty CycleLow-Impedance Output Buffer: 0.1ΩLow-Distortion Sine Wave: 0.75%Low 200ppm/°C Temperature Drift   Applications Precision Function GeneratorsVoltage-Controlled OscillatorsFrequency ModulatorsPulse-Width ModulatorsPhase-Locked LoopsFrequency SynthesizerFSK Generator—Sine and Square Waves   Datasheet You can download the datasheet from the link given below: MAX038-Datasheet   Specifications Part Package Code:SOICPackage Description:SOP, SOP20,.4Pin Count:20Reach Compliance Code:not_compliantECCN Code:EAR99HTS Code:8542.39.00.01Manufacturer:Maxim Integrated ProductsRisk Rank:5.87Additional Feature:ALSO REQUIRES -5V SUPPLYAnalog IC - Other Type:SQUARE; TRIANGULAR; SINE; SAWTOOTH; PULSEJESD-30 Code:R-PDSO-G20JESD-609 Code:e0Length:12.8 mmMoisture Sensitivity Level:1Neg Supply Voltage-Nom (Vsup):-5 VNumber of Functions:1Number of Terminals:20Operating Temperature-Max:70 °COutput Frequency-Max:20 MHzPackage Body Material:PLASTIC/EPOXYPackage Code:SOPPackage Equivalence Code:SOP20,.4Package Shape:RECTANGULARPackage Style:SMALL OUTLINEPeak Reflow Temperature (Cel):245Power Supplies:+-5 VSeated Height-Max:2.65 mmSubcategory:Analog Waveform Generation FunctionsSupply Voltage-Max (Vsup):5.25 VSupply Voltage-Min (Vsup):4.75 VSupply Voltage-Nom (Vsup):5 VSurface Mount:YESTemperature Grade:COMMERCIALTerminal Finish:Tin/Lead (Sn85Pb15)Terminal Form:GULL WINGTerminal Pitch:1.27 mmTerminal Position:DUALTime@Peak Reflow Temperature-Max (s):NOT SPECIFIEDWidth:7.5 mm   Manufacturer Maxim Integrated, a subsidiary of Analog Devices, designs, manufactures, and sells analog and mixed-signal integrated circuits for the automotive, industrial, communications, consumer, and computing markets. Maxim's product portfolio includes power and battery management ICs, sensors, analog ICs, interface ICs, communications solutions, digital ICs, embedded security, and microcontrollers. The company is headquartered in San Jose, California, and has design centers, manufacturing facilities, and sales offices worldwide.   Using Warning Note: Please check their parameters and pin configuration before replacing them in your circuit.   FAQ What is the difference between waveform generator and signal generator? A signal generator differs from a waveform and function generator in the aspect that it generates simple waveforms, usually a sine wave. Although some signal generators produce square wave and triangle wave.   Why do we use waveform generators? Waveform Generators are used to apply specified analog signals to circuits, anything from DC signals, sine waves of varying frequencies, AM/FM modulated signals, and more. This guide explains the use of the Waveform Generator instrument in WaveForms. This instrument is also referred to as the Wavegen.   Which circuit is used to generate waveforms? A square wave generator is an electronic circuit which generates square wave. This section discusses about op-amp based square wave generators. Observe that in the circuit diagram shown above, the resistor R1 is connected between the inverting input terminal of the op-amp and its output of op-amp.  

CatalogProduct OverviewFDV301N Related Video IntroductionFDV301N CAD ModelsFDV301N Pin configurationFDV301N Marking DiagramFDV301N Package DimensionsFDV301N FeaturesFDV301N Inverter ApplicationFDV301N DatasheetFDV301N SpecificationsFDV301N ManufacturerUsing WarningFDV301N FAQ Product OverviewThis N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. FDV301N Related Video IntroductionFDV301N Video Description: Step by step Testing Tutorial N-Channel P-Channel Mosfet using Digital Multimeter. FDV301N CAD ModelsFigure: FDV301N PCB Symbol   Figure: FDV301N Footprint   Figure: FDV301N 3D Models FDV301N Pin configurationFigure: FDV301N PinoutFDV301N is a three pin device as shown in figure and the function of each of those pins is stated below. PinNameFunction1DrainCurrent comes in to the device from this pin.2GateMOSFET gets turned ON and OFF depending on voltage applied at this pin.3SourceCurrent which comes in to the device goes out through this pin. This pin is usually connected to ground. FDV301N Marking DiagramFigure: FDV301N Marking Diagram &E = Designates Space&Y = Binary Calendar YearCoding Scheme301 = Specific Device Code&G = Date Code FDV301N Package DimensionsFigure: FDV301N Package Dimensions FDV301N Features25 V, 0.22 A Continuous, 0.5 A Peak♦ RDS(on) = 5  @ VGS = 2.7 V♦ RDS(on) = 4  @ VGS = 4.5 VVery Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 VGate−Source Zener for ESD Ruggedness. > 6 kV Human BodyModelReplace Multiple NPN Digital Transistors with One DMOS FETThis Device is Pb−Free and Halide Free FDV301N Inverter ApplicationFigure: FDV301N Inverter Application FDV301N DatasheetYou can download the datasheet from the link given below:FDV301N Datasheet FDV301N SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:SMD/SMTPackage / Case:SOT-23-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:25 VId - Continuous Drain Current:220 mARds On - Drain-Source Resistance:5 OhmsVgs - Gate-Source Voltage:- 8 V, + 8 VVgs th - Gate-Source Threshold Voltage:700 mVQg - Gate Charge:700 pCOperating Temperature:-55°C ~ 150°C (TJ)Pd - Power Dissipation:350 mWChannel Mode:EnhancementBrand:onsemi / FairchildConfiguration:SingleFall Time:6 nsForward Transconductance - Min:0.2 SHeight:1.2 mmLength:2.9 mmProduct:MOSFET Small SignalProduct Type:MOSFETRise Time:6 nsSeries:FDV301NSubcategory:MOSFETsTransistor Type:1 N-ChannelType:FETTypical Turn-Off Delay Time:3.5 nsTypical Turn-On Delay Time:3.2 nsWidth:1.3 mmPart # Aliases:FDV301N_NLUnit Weight:0.000282 oz FDV301N ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FDV301N FAQWhat is FDV301N?FDV301N is semiconductor device called MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is used as a high speed switching device in applications. The device is an N-Channel enhancement mode Field Effect Transistor that is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. What does N channel mean?Channel MOSFET is a type of metal oxidesemiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET). What is N and P channel?N channel MOSFETs are fast switching devices. The N channel MOSFETs are TTL compatible. As the applied gate voltage and drain supply are positive for an n-channel enhancement MOSFET. The drain resistance of P channel MOSFET is 3 times higher than that for an identical N-channel MOSFET. 

Product OverviewThe IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. This blog will introduce IRF740systematically from its features, pinout to its specifications, applications, also including IRF740 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionIRF740 FeaturesIRF740 PinoutPin ConfigurationIRF740 ApplicationsIRF740 EquivalentsIRF740 Circuit DiagramIRF740 PackageIRF740 SpecificationIRF740 ManufacturerIRF740 DatasheetUsing WarningsIRF740 FAQ Related Video Introduction Video: MOSFET IRF740 (getting to know it) IRF740 Video Description: My first look at a MOSFET, so just a basic circuit to test it out as a switch for a motor. IRF740 FeaturesDynamic dV/dt ratingRepetitive avalanche ratedFast switchingEase of parallelingSimple drive requirements IRF740 PinoutThe following figure is the diagram of IRF740 pinout. IRF740 Pinout Pin ConfigurationPin NumberPin NameDescription1SourceCurrent flows out through Source (maximum 10A)2GateControls the biasing of the MOSFET (Threshold voltage 10V)3DrainCurrent flows in through Drain IRF740 ApplicationsSwitching high power devicesInverter CircuitsDC-DC ConvertersControl speed of motorsLED dimmers or flashersHigh Speed switching applications IRF740 EquivalentsIRFB13N50A, UF450A, SSF13N15 IRF740 Circuit DiagramThe following is the circuit diagram of IRF740. Switching Time Test Circuit 13b - Gate Charge Test Circuit IRF740 PackageThe following diagram shows the IRF740package. IRF740 Package IRF740 SpecificationProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:MOSFETTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:400 VId - Continuous Drain Current:10 ARds On - Drain-Source Resistance:550 mOhmsVgs - Gate-Source Voltage:- 20 V, + 20 VMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CPd - Power Dissipation:125 WChannel Mode:EnhancementPackaging:TubeConfiguration:SingleForward Transconductance - Min:4 SHeight:9.15 mmLength:10.4 mmRise Time:10 ns IRF740 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. IRF740 DatasheetYou can download IRF740 datasheet from the link given below:IRF740 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. IRF740 FAQWhat is IRF740?The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Hence this mosfet cannot be used in applications where high switching efficiency is required. What are MOSFET transistors used for?The purpose of a MOSFET transistor is essentially to control voltage/current flow between the source and the drain. What is N-channel Mosfet?A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. What are power MOSFETs used for?Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. How does N-channel MOSFET transistor work?The working of the n-channel MOSFET is based on the majority of the carriers that are electrons. These electrons move in the channel is responsible for the flow of current in the transistor. The p-substrate material is required in the formation of the gate terminals.

Catalog 74HC595N Description 74HC595N Related Video Instruction 74HC595N CAD Models 74HC595N Pin Configuration 74HC595N Functional Diagram 74HC595N Shift Register with Arduino 74HC595N Circuit Diagram 74HC595N Features 74HC595N Applications 74HC595N Datasheet 74HC595N Specifications 74HC595N Manufacturer Using Warning 74HC595N FAQ 74HC595N Description The 74HC/HCT595 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.   The 74HC/HCT595 is an 8-stage serial shift register with a storage register and 3-state outputs. The shift register and storage register have separate clocks.   Data is shifted on the positive-going transitions of the SH_CP input. The data in each register is transferred to the storage register on a positive-going transition of the ST_CP input. If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register.   The shift register has a serial input (DS) and a serial standard output (Q7’) for cascading. It is also provided with asynchronous reset (active LOW) for all 8 shift register stages. The storage register has 8 parallel 3-state bus driver outputs. Data in the storage register appears at the output whenever the output enable input (OE) is LOW.   74HC595N Related Video Instruction Video:How Shift Registers Work - 74HC595N 74HC595N Video Description: A Schematic (and also a great tutorial)    Video:One 74hc595n Shift Register Tutorial   74HC595N CAD Models   Figure: PCB Symbol     Figure: Footprint     Figure: 3D Model   74HC595N Pin Configuration   Figure: Pin Configuration   74HC595N Functional Diagram   Figure: Functional Diagram   74HC595N Shift Register with Arduino   Figure: Using a shift register 74HC595N with Arduino   74HC595N Circuit Diagram   Figure: Circuit Diagram   74HC595N Features 8-bit serial input8-bit serial or parallel outputStorage register with 3-state outputsShift register with direct clear100 MHz (typical) shift out frequencyESD protection:      - HBM EIA/JESD22-A114-A exceeds 2000 V      - MM EIA/JESD22-A115-A exceeds 200 V   74HC595N Applications Serial-to-parallel data conversionRemote control holding register.   74HC595N Datasheet You can download the datasheet from the link given below: 74HC595N-Datasheet   74HC595N Specifications PhysicalCase/PackageDIPMountThrough HoleNumber of Pins16 TechnicalFrequency100 MHzLogic FunctionShift RegisterMax Operating Temperature125 °CMax Supply Voltage6 VMin Operating Temperature-40 °CMin Supply Voltage2 VNumber of Bits8Number of Circuits8Number of Elements1Number of Gates1Operating Supply Voltage5 VOutput Voltage6 VPower Dissipation750 mWPropagation Delay265 ns ComplianceLead FreeLead FreeRadiation HardeningNoREACH SVHCNo SVHCRoHSCompliant   74HC595N Manufacturer NXP Semiconductors N.V. is a Netherlands-domiciled American semiconductor manufacturer with headquarters in Eindhoven, Netherlands that focuses in the automotive industry. The company employs approximately 31,000 people in more than 35 countries, including 11,200 engineers in 33 countries.   Using Warning Note: Please check their parameters and pin configuration before replacing them in your circuit.   74HC595N FAQ What does a shift register do? A shift register is a type of digital circuit using a cascade of flip-flops where the output of one flip-flop is connected to the input of the next. They share a single clock signal, which causes the data stored in the system to shift from one location to the next.   What is the difference between shift register and counter? There Are used in Memories Like RAM,ROM etc. A counter is a special case of a register. Shift registers are a type of sequential logic circuit, mainly for storage of digital data. They are a group of flip-flops connected in a chain so that the output from one flip-flop becomes the input of the next flip-flop.   When would you use a shift register? Shift Registers are used for data storage or for the movement of data and are therefore commonly used inside calculators or computers to store data such as two binary numbers before they are added together, or to convert the data from either a serial to parallel or parallel to serial format.   What are shift register counters? Shift register counters are a sequence of a certain number of core registers that are connected together to provide a clock-driven data shift. The most common of these are called Johnson counters and ring counters.   Can a shift register be used as a counter? Shift registers are also used as counters. There are two types of counters based on the type of output from right most D flip-flop is connected to the serial input. Those are Ring counter and Johnson Ring counter.  

Catalog Product Overview LM555CN Related Video Introduction LM555CN CAD Models LM555CN Circuits LM555CN Block Diagram LM555CN Features LM555CN Applications LM555CN Datasheet LM555CN Specifications LM555CN Manufacturer Using Warning LM555CN FAQ   Product Overview The LM555 is a highly stable controller capable of producing accurate timing pulses. With a monostable operation, the delay is controlled by one external resistor and one capacitor. With a stable operation, the frequency and duty cycle are accurately controlled by two external resistors and one capacitor.   LM555CN Related Video Introduction LM555CN Video Description: In this tutorial we will learn how the 555 Timer works, one of the most popular and widely used ICs of all time.   LM555CN CAD Models Figure: LM555CN PCB Symbol       Figure: LM555CN Footprint       Figure: LM555CN 3D Models   LM555CN Circuits Figure: LM555CN Monostable Circuit     Figure: LM555CN Circuit for Pulse Width Modulation     Figure: LM555CN Circuit for Pulse Position Modulation   LM555CN Block Diagram Figure: LM555CN Block Diagram   LM555CN Features High-Current Drive Capability: 200 mAAdjustable Duty CycleTemperature Stability of 0.005%/°CTiming From us to HoursTurn off Time Less Than 2 us   LM555CN Applications Precision TimingPulse GenerationDelay GenerationSequential Timing   LM555CN Datasheet You can download the datasheet from the link given below: LM555CN Datasheet   LM555CN Specifications TypeDescriptionCategoryIntegrated Circuits (ICs)Clock/Timing - Programmable Timers and OscillatorsMfronsemiPackageTubePart StatusObsoleteType555 Type, Timer/Oscillator (Single)Voltage - Supply4.5V ~ 16VCurrent - Supply7.5 mAOperating Temperature0°C ~ 70°CPackage / Case8-DIP (0.300", 7.62mm)Supplier Device Package8-DIPMounting TypeThrough HoleBase Product NumberLM555   LM555CN Manufacturer Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.   Using Warning Note: Please check their parameters and pin configuration before replacing them in your circuit.   LM555CN FAQ What is LM555CN? The LM555CN is a highly stable Controller/Single Timer, capable of producing accurate timing pulses. With monostable operation, the time delay is controlled by one external resistor and one capacitor.   What is IC 555 timer used for? The 555 timer IC is an integrated circuit (chip) used in a variety of timer, delay, pulse generation, and oscillator applications. Derivatives provide two (556) or four (558) timing circuits in one package. It was commercialized in 1972 by Signetics.   Why IC 555 is called Timer? The 555 Timers name comes from the fact that there are three 5kΩ resistors connected together internally producing a voltage divider network between the supply voltage at pin 8 and ground at pin 1.  

CatalogProduct OverviewBSS123 Related Video IntroductionBSS123 CAD ModelsBSS123 Marking DiagramBSS123 Package DimensionsBSS123 FeaturesBSS123 ApplicationsBSS123 DatasheetBSS123 SpecificationsBSS123 ManufacturerUsing WarningBSS123 FAQ Product OverviewThese N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. BSS123 Related Video IntroductionBSS123 Video Description: Today I am going to explain you about N-Channel logic level enhancement mode power field effect transistor. we learn why used in laptop this smd component. BSS123 CAD ModelsFigure: BSS123 PCB Symbol   Figure: BSS123 Footprint   Figure: BSS123 3D Models BSS123 Marking DiagramFigure: BSS123 Marking DiagramSA = Specific Device CodeM = Date Code*(Note: Microdot may be in either location)*Date Code orientation and/or position may vary depending upon manufacturing location. BSS123 Package DimensionsFigure: BSS123 Package Dimensions BSS123 Features0.17 A, 100 V♦ RDS(on) = 6  @ VGS = 10 V♦ RDS(on) = 10  @ VGS = 4.5 VHigh Density Cell Design for Extremely Low RDS(on)Rugged and ReliableCompact Industry Standard SOT−23 Surface Mount PackageThis Device is Pb−Free and Halogen Free BSS123 DatasheetYou can download the datasheet from the link given below:BSS123 Datasheet BSS123 SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:SMD/SMTPackage / Case:SOT-23-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:100 VId - Continuous Drain Current:170 mARds On - Drain-Source Resistance:6 OhmsVgs - Gate-Source Voltage:- 20 V, + 20 VVgs th - Gate-Source Threshold Voltage:800 mVQg - Gate Charge:2.5 nCOperating Temperature:-55°C ~ 150°C (TJ)Pd - Power Dissipation:300 mWChannel Mode:EnhancementBrand:onsemi / FairchildConfiguration:SingleFall Time:9 nsForward Transconductance - Min:0.8 SHeight:1.2 mmLength:2.9 mmProduct:MOSFET Small SignalProduct Type:MOSFETRise Time:9 nsSeries:BSS123Subcategory:MOSFETsTransistor Type:1 N-ChannelType:FETTypical Turn-Off Delay Time:17 nsTypical Turn-On Delay Time:1.7 nsWidth:1.3 mmPart # Aliases:BSS123_NLUnit Weight:0.000282 oz BSS123 ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. BSS123 FAQWhat is BSS123?The BSS123 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor that comes in surface mount package SOT-23. It is a rugged and reliable device that comes with a drain-source voltage of around 100V while the gate-source voltage is -+20V. What is an N-channel enhancement mode MOSFET?In n-channel enhancement mode, no current flows through the transistor until the voltage at the gate and terminal source exceed the minimum voltage cut in value. If the voltage at the drain and the terminal source is applied then even there is no evident flow of the current. What are the two main types of field effect transistors?There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET).