The Kynix Components

CatalogGeneral DescriptionFeaturesOrdering CodeConnection DiagramSchematic DiagramAbsolute Maximum RatingsRecommended Operating ConditionsDC Electrical CharacteristicsAC Electrical CharacteristicsSwitching Time WaveformsTypical ApplicationsTypical Performance CharacteristicsPhysical DimensionsDatasheet PDF DownloadFAQ about CD40106BGeneral DescriptionThe CD40106BC Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N and P-channel enhancement transistors. The positive and negative-going threshold voltages, VT+ and VT−,show low variation with respect to temperature (typ 0.0005V/°C at VDD = 10V), and hysteresis, VT+  − VT− ≥ 0.2 VDD is guaranteed. All inputs are protected from damage due to static discharge by diode clamps to VDD and VSS. Features■ Wide supply voltage range: 3V to 15V■ High noise immunity: 0.7 VDD (typ.)■ Low power TTL compatibility: Fan out of 2 driving 74L or 1 driving 74LS■ Hysteresis: 0.4 VDD (typ.),0.2 VDD guaranteed■ Equivalent to MM74C14 Ordering CodeOrder NumberPackage NumberPackage DescriptionCD40106BCMM14A14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" NarrowCD40106BCNN14A14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide Connection Diagram Schematic Diagram Absolute Maximum RatingsDC Supply Voltage (VDD)−0.5 to +18 VDCInput Voltage (VIN)−0.5 to VDD +0.5 VDCStorage Temperature Range (TS)−65°C to +150°C Power Dissipation (PD)Dual-In-Line700 mWSmall Outline500 mW Lead Temperature (TL)(Soldering, 10 seconds)260°C Recommended Operating ConditionsDC Supply Voltage (VDD) 3 to 15 VDCInput Voltage (VIN)0 to VDD VDCOperating Temperature Range (TA) −55°C to +125°C DC Electrical CharacteristicsSymbolParameterConditions-55°C+25°C+125°CUnitsMinMaxMinTypMaxMinMaxIDDQuiescent Device CurrentVDD = 5V VDD  = 10VVDD  = 15V 1.02.04.0  1.02.04.0 3060120 mAVOLLOW Level Output Voltage|IO| < 1 mA         VVDD = 5VVDD = 10V0.050.050.050.050.050.05VDD = 15V0.050.050.05VOHHIGH Level Output Voltage|IO| < 1 mA         VVDD = 5VVDD = 10V4.959.954.959.955104.950.95VDD = 15V14.9514.951514.95VT-Negative-Going Threshold VoltageVDD = 5V, VO = 4.5V VDD = 10V, VO = 9VVDD = 15V, VO = 13.5V0.71.42.12.04.06.00.71.42.11.43.25.02.04.06.00.71.42.12.04.06.0 VVT+Positive-Going Threshold VoltageVDD = 5V, VO = 0.5V VDD = 10V, VO = 1VVDD = 15V, VO = 1.5V3.06.09.04.38.612.93.06.09.03.66.810.04.38.612.93.06.09.04.38.612.9 VVHHysteresis (VT+ - VT-) VoltageVDD = 5V VDD  = 10VVDD  = 15V1.02.03.03.67.210.81.02.03.02.23.65.03.67.210.81.02.03.03.67.210.8 VIOLLOW Level Output Current (Note 3)VDD = 5V, VO = 0.4V0.64 0.510.88 0.36  mAVDD = 10V, VO = 0.5V1.61.32.250.9VDD = 15V, VO = 1.5V4.23.48.82.4IOHHIGH Level Output Current (Note 3)VDD = 5V, VO = 4.6V-0.64 -0.51-0.88 -0.36  mAVDD = 10V, VO = 9.5V-1.6-1.3-2.25-0.9VDD = 15V, VO = 13.5V-4.2-3.4-8.8-2.4IINInput CurrentVDD = 15V, VIN = 0VVDD = 15V, VIN = 15V -0.10.1 -10-510-5-0.10.1 -1.01.0mA AC Electrical CharacteristicsSymbolParameterConditionsMinTypMaxUnitstPHL or tPLHPropagation Delay Time from Input to OutputVDD = 5V 220400nsVDD = 10V  80200VDD = 15V 70160tTHL or tTLHTransition TimeVDD = 5V 100200nsVDD = 10V 50100VDD = 15V 4080CINAverage Input CapacitanceAny Input 57.5pFCPDPower Dissipation CapacityAny Gate (Note 5) 14 pF Switching Time Waveforms Typical Applications Typical Performance Characteristics Physical Dimensions  Datasheet PDF DownloadYou can download the datasheet from the link given below.CD40106B-Datasheet FAQ about CD40106BWhat is Hex Schmitt trigger?An inverter Schmitt trigger is a device that converts any form of an input signal into a digital output signal, so it can function both with digital inputs as well as analog. ... In a Schmitt trigger, there is a wide. What is Schmitt trigger used for?Schmitt trigger devices are typically used in signal conditioning applications to remove noise from signals used in digital circuits, particularly mechanical contact bounce in switches. What does a Schmitt trigger change?A Schmitt trigger is a comparator (not exclusively) circuit that makes use of positive feedback (small changes in the input lead to large changes in the output in the same phase) to implement hysteresis (a fancy word for delayed action) and is used to remove noise from an analog signal while converting it to a digital ... Why is Schmitt trigger called regenerative comparator?A Schmitt trigger circuit is also called a regenerative comparator circuit. The circuit is designed with a positive feedback and hence will have a regenerative action which will make the output switch levels. ... It is basically an inverting comparator circuit with a positive feedback. What are the types of Schmitt trigger?These are classified into two types namely inverting Schmitt trigger and non inverting Schmitt trigger. The inverting Schmitt trigger can be defined as an element of output is connected to the positive terminal of the operational amplifier. 

CatalogDescriptionFunctional Block DiagramDetailed DescriptionAbsolute Maximum Ratings†Recommended Operating ConditionsElectrical CharacteristicsOperating CharacteristicsTypical CharacteristicsApplications InformationTSL1401 DatasheetTSL1401 ManufacturerUsing WarningTSL1401 FAQ DescriptionThe TSL1401 linear sensor array consists of a 128 × 1 array of photodiodes, associated charge amplifier circuitry, and a pixel data-hold function that provides simultaneous-integration start and stop times for all pixels. The pixels measure 63.5 µm (H) by 55 µm (W) with 63.5-µm center-to-center spacing and 8.5-µm spacing between pixels. Operation is simplified by internal control logic that requires only a serial-input (SI) signal and a clock. Functional Block DiagramTSL1401 Functional Block Diagram Terminal FunctionsNAMENO.DESCRIPTIONAO3Analog outputCLK2Clock. The clock controls charge transfer, pixel output, and reset.GND6, 7Ground (substrate). All voltages are referenced to the substrate.NC5, 8No internal connectionSI1Serial input. SI defines the start of the data-out sequence.VDD4Supply voltage. Supply voltage for both analog and digital circuits. Detailed DescriptionThe sensor consists of 128 photodiodes arranged in a linear array. Light energy impinging on a photodiode generates photocurrent, which is integrated by the active integration circuitry associated with that pixel. During the integration period, a sampling capacitor connects to the output of the integrator through an analog switch. The amount of charge accumulated at each pixel is directly proportional to the light intensity and the integration time. The output and reset of the integrators is controlled by a 128-bit shift register and reset logic. An output cycle is initiated by clock ing in a logic 1 on SI. This causes all 128 sampling capacitors to be disconnected from their respective integrators and starts an integrator reset period. As the SI pulse is clocked through the shift register, the charge stored on the sampling capacitors is sequentially connected to a charge-coupled output amplifier that generates a voltage on analog output AO. The integrator reset period ends 18 clock cycles after the SI pulse is clocked in. Then the next integration period begins. AO is driven by a source follower that requires an external pulldown resistor. When the output is not in the output phase, it is in a high-impedance state. The output is nominally 0 V for no light input and 2 V for a nominal full-scale output. The TSL1401 is intended for use in a wide variety of applications, including: image scanning, mark and code reading, optical character recognition (OCR) and contact imaging, edge detection and positioning, and optical linear and rotary encoding. Absolute Maximum Ratings†Supply voltage, VDD: 7 VDigital input current range, II: −20 mA to 20 mAOperating free-air temperature range, TA: 0°C to 70°CStorage temperature range, Tstg: −25°C to 85°CLead temperature 1,6 mm (1/16 inch) from case for 10 seconds: 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Recommended Operating Conditions (see Figure 1 and Figure 2) MINNOMMAXUNITSupply voltage, VDD4.555.5VInput voltage, VI0 VDDVHigh-level input voltage, VIHVDD × 0.7 VDDVLow-level input voltage, VIL0 VDD × 0.3VWavelength of light source, λ400 700nmClock frequency, fclock5 2000kHzSensor integration time, tint0.0645 100msSetup time, serial input, tsu(SI)0  nsHold time, serial input, th(SI) (see Note 1)20  nsOperating free-air temperature, TA0 70℃ NOTE 1: SI must go low before the rising edge of the next clock pulse. Figure 1. Timing Waveforms Electrical Characteristicsat fclock = 200 kHz, VDD = 5 V, TA = 25°C, λp = 565 nm, tint = 5 ms, RL = 330 Ω, Ee = 14 µW/cm2 (unless otherwise noted) (see Note 2)PARAMETERTEST CONDITIONSMINTYPMAXUNIT Analog output voltage (white, average over 128 pixels)  1.822.2V Analog output voltage (dark, average over 128 pixels)Ee = 000.10.2VPRNUPixel response nonuniformitySee Note 3 ±4%±7.5%  Nonlinearity of analog output voltageSee Note 4±0.4%  FS Output noise voltageSee Note 5 1 mVrms Saturation exposure  136175 nJ/cm2 Analog output saturation voltage  33.5 VDSNUDark signal nonuniformityAll pixels, See Note 6Ee = 0 0.080.12VAll except pixel 1, Ee = 0 See Note 6 0.0170.035ILImage lagSee Note 7     IDDSupply current   0.50% mAIIHHigh-level input currentVI = VDD  2.54μAIILLow-level input currentVI = 0   1μACiInput capacitance   51pF NOTES: Clock duty cycle is assumed to be 50%.PRNU is the maximum difference between the voltagefrom any single pixel and the average output voltage fromall pixels of the device under test when the array is uniformly illuminated.Nonlinearity is defined as the maximum deviation from abest-fit straight line over the dark-to-white irradiance levels,as a percent of analog output voltage (white).RMS noise is the standard deviation of a single-pixeloutput under constant illumination as observed over a5-second period.DNSU is the difference between the maximum andminimum of dark-current voltage.Image lag is a residual signal left in a pixel from aprevious exposure. It is defined as a percent of white-levelsignal remaining after a pixel is exposed to a white condition followed by a dark condition: Operating Characteristics over recommended ranges of supply voltage and operating free-air temperature (see Figure 2)PARAMETERTEST CONDITIONSMINTYPUNITtw(H)Clock pulse duration (high)  50 nstw(L)Clock pulse duration (low)  50 nstsAnalog output settling time to ± 1%RL = 330 Ω,CL = 50 pF 350ns Figure 2. Operational Waveforms Typical CharacteristicsFigure 3. Photodiode Spectral Responsivity Applications InformationThis dual-in-line package consists of a circuit mounted on a lead frame and encapsulated with an electrically nonconductive clear plastic compound. Figure 4. Packaging Configuration † True position when unit is installedNOTES: All linear dimensions are in inches andparenthetically in millimeters.This drawing is subject ot change without notice. TSL1401 DatasheetYou can download the datasheet from the link given below:TSL1401 Datasheet TSL1401 ManufacturerTexas Instruments Incorporated (TI) is an American technology company headquartered in Dallas, Texas, that designs and manufactures semiconductors and various integrated circuits, which it sells to electronics designers and manufacturers globally. It is one of the top 10 semiconductor companies worldwide based on sales volume.The company's focus is on developing analog chips and embedded processors, which account for more than 80% of its revenue.TI also produces TI digital light processing technology and education technology products including calculators, microcontrollers and multi-core processors. The company holds 45,000 patents worldwide as of 2016. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. TSL1401 FAQWhat is linear sensor?A Linear Transducer is a type of position sensor. Linear transducers measure linear displacement or movement along a single axis in any direction. They do this by converting the movement into an electrical signal which is proportional to the displacement so that it can be processed by various devices. What are linear array sensors?Linear array sensors consist of a linear array of integrating photosensing pixels which measure incident light over a user-defined exposure time and generate a voltage or digital output which represents the light exposure at each pixel. The sensors are available in a variety of lengths and pixel resolutions. What is a sensor array used for?A sensor array is a group of sensors, usually deployed in a certain geometry pattern, used for collecting and processing electromagnetic or acoustic signals. 

Catalog DescriptionFeaturesApplicationsAbsolute Maximum RatingsBasic CharacteristicsTypical CharacteristicsReflow Solder ProfilesPackage DimensionsTEMT6000 DatasheetTEMT6000 FAQ DescriptionTEMT6000X01 ambient light sensor plays a key role in power savings strategies by controlling LCD display intensity and keypad backlighting of mobile devices and in industrial on/off-lighting operation. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. TEMT6000X01 has analog output and is packaged in a small surface mount package. FeaturesProduct designed and qualified acc. AEC-Q101 for the automotivemarketHighsensitivity: IPCE = 50 µA (EV = 100 lx)Adapted to human eyeresponsivityWide angle of half sensitivity: j= ± 60°Surface mountpackageDimensions: L 4 mm x W 2 mm x H 1.05mmTape and reel: 3000pcs/reelMinimum order quantity: MOQ = 3000pcsLead (Pb)-free solderingreleasedLead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE2002/96/EC ApplicationsAmbient light sensor for control of display backlight dimming in LCD displays and keypad backlighting of mobile devices and in industrial on/off-lighting operation.AutomotivesensorsMobilephonesNotebookcomputersPDA’sCamerasDashboards Absolute Maximum RatingsTamb = 25 °C, unless otherwise specifiedParameterTest conditionSymbolValueUnitCollector emitter voltage VCEO6VEmitter collector voltage VECO1.5VCollector current IC20mATotal power dissipationTamb ≤ 55 °CPV100mWJunction temperature Tj100°COperating temperature range Tamb- 40 to + 100°CStorage temperature range Tstg- 40 to + 100°CSoldering temperatureReflow profile figure 7Tsd260°CThermal resistance junction/ ambient RthJA450K/W Figure 1. Power Dissipation vs. Ambient Temperature Basic CharacteristicsTamb = 25 °C, unless otherwise specifiedParameterTest conditionSymbolMinTyp.MaxUnitCollector emitter breakdown voltageIC = 0.1 mAVCEO6  VCollector dark currentVCE = 5 V, E = 0ICEO 350nACollector-emitter capacitanceVCE = 0 V, f = 1 MHz, E = 0CCEO 16 pFCollector light currentEv = 20 lx, CIE illuminant A,VCE = 5 VIPCE3.51016µAEv = 100 lx, CIE illuminant A, VCE = 5 VIPCE 50 µATemperature coefficient of IPCECIE illuminant ATKIPCE 1.18 %/KLED, whiteTKIPCE 0.9 %/KAngle of half sensitivity Φ ± 60 degWavelength of peak sensitivity λp 570 nmRange of spectral bandwidth λ0.1 360 to 970 nmCollector emitter saturation voltageEv = 20 lx, CIE illuminant A, IPCE = 1.2 µAVCEsat 0.1 V Typical CharacteristicsTamb = 25 °C, unless otherwise specifiedFigure 2. Collector Dark Current vs. Ambient Temperature  Figure 3. Relative Photo Current vs. Ambient Temperature  Figure 4. Photo Current vs. Illuminance  Figure 5. Collector Emitter Capacitance vs. Collector Emitter Voltage  Figure 6. Relative Spectral Sensitivity vs. Wavelength  Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Reflow Solder ProfilesDrypackDevices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor LifeFloor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TEMT6000X01 is released for:Moisture sensitivity level 4, according to JEDEC, J-STD-020Floor life: 72 hConditions: Tamb < 30 °C, RH < 60 % DryingIn case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Figure 8. Tin (Sn) Reflow Solder Profile (Pb-free)  Figure 9. Lead Tin (SnPb) Reflow Solder Profile Package Dimensions TEMT6000 DatasheetYou can download the datasheet of TEMT6000 from the link given below:TEMT6000 Datasheet TEMT6000 FAQWhat is TEMT6000 ambient light sensor?The TEMT6000 ambient light sensor is an ordinary sensor which senses its surroundings like a human eye does and it is very similar to a LDR (light-dependent resistor). Essentially, the TEMT6000 can be defined as a silicon NPN epitaxial planar photo-transistor used for sensing the visible spectrum of light. What does an ambient light sensor do?The Ambient Light Sensor (ALS) products from ams provide measurements of ambient light intensity which match the human eye's response to light under a variety of lighting conditions. Each device has a specific operating range of performance, from very low light up to bright sunlight. What is an ambient light sensor on a monitor?An ambient light sensor in an LCD monitor or display system can be used to enable automatic backlight adjustment or power standby. It can be used to dim the backlight to match current lighting conditions or power off the whole display. What is the use of ambient light sensor in mobile phones?Ambient light sensor (ALS) of smartphoneALS in smartphone is used to adjust the brightness of the phone thereby reduces the power consumption of the battery. When it is dark, the screen of the phone will become dim, sufficient enough to enable a user to see the phone's screen effectively. Where is ambient light sensor used?An ambient light sensor is a component in smartphones, notebooks, other mobile devices, automotive displays and LCD TVs. It is a photodetector that is used to sense the amount of ambient light present, and appropriately dim the device's screen to match it. 

CatalogFEATURESDESCRIPTIONORDERING INFORMATIONABSOLUTE MAXIMUM RATINGSTHERMAL RESISTANCE RATINGSSPECIFICATIONSTYPICAL CHARACTERISTICSPackage PictureDatasheet PDF DownloadIRF840 FAQFEATURESDynamic dV/dt ratingRepetitive avalanche ratedFast switchingEase of parallelingSimple drive requirementsDESCRIPTIONThird generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.ORDERING INFORMATIONPackageTO-220ABLead (Pb)-freeIRF840PbFLead (Pb)-free and halogen-freeIRF840PbF-BE3ABSOLUTE MAXIMUM RATINGS(TC = 25 °C, unless otherwise noted)PARAMETERSYMBOLLIMITUNITDrain-source voltageVDS500VGate-source voltageVGS± 20VContinuous drain currentVGS at 10 VTC = 25 °CID8.0 ATC = 100 °C5.1Pulsed drain current aIDM32Linear derating factor 1.0W/°CSingle pulse avalanche energy bEAS510mJRepetitive avalanche current aIAR8.0ARepetitive avalanche energy aEAR13mJMaximum power dissipationTC = 25 °CPD125WPeak diode recovery dV/dt cdV/dt3.5V/nsOperating junction and storage temperature rangeTJ, Tstg-55 to +150°CSoldering recommendations (peak temperature) dFor 10 s 300Mounting torque6-32 or M3 screw 10lbf · in1.1N · mTHERMAL RESISTANCE RATINGSPARAMETERSYMBOLTYP.MAX.UNITMaximum junction-to-ambientRthJA-62 °C/WCase-to-sink, flat, greased surfaceRthCS0.50-Maximum junction-to-case (drain)RthJC-1.0SPECIFICATIONSPARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNITStaticDrain-source breakdown voltageVDSVGS = 0 V, ID = 250 μA500--VVDS temperature coefficientDVDS/TJReference to 25 °C, ID = 1 mA-0.78-V/°CGate-source threshold voltageVGS(th)VDS = VGS, ID = 250 μA2.0-4.0VGate-source leakageIGSSVGS = ± 20 V--± 100nAZero gate voltage drain currentIDSSVDS = 500 V, VGS = 0 V--25μAVDS = 400 V, VGS = 0 V, TJ = 125 °C--250Drain-source on-state resistanceRDS(on)VGS = 10 VID = 4.8 A b--0.85LForward transconductancegfsVDS = 50 V, ID = 4.8 A b4.9--SDynamicInput capacitanceCissVGS = 0 V, VDS = 25 V,f = 1.0 MHz, see fig. 5-1300- pFOutput capacitanceCoss-310-Reverse transfer capacitanceCrss-120-Total gate chargeQg VGS = 10 V ID = 8 A, VDS = 400 V,see fig. 6 and 13 b--63 nCGate-source chargeQgs--9.3Gate-drain chargeQgd--32Turn-on delay timetd(on) VDD = 250 V, ID = 8 ARg = 9.1 L, RD = 31 L, see fig. 10 b-14-  nsRise timetr-23-Turn-off delay timetd(off)-49-Fall timetf-20-Internal drain inductanceLDBetween lead, D6 mm (0.25") from package and center ofGdie contactS-4.5-  nHInternal source inductanceLS-7.5-Gate input resistanceRgf = 1 MHz, open drain0.6-2.8LDrain-Source Body Diode CharacteristicsContinuous source-drain diode currentISMOSFET symbolDshowing theintegral reverse Gp - n junction diodeS--8.0 APulsed diode forward current aISM--32Body diode voltageVSDTJ = 25 °C, IS = 8 A, VGS = 0 V b--2.0VBody diode reverse recovery timetrrTJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b-460970nsBody diode reverse recovery chargeQrr-4.28.9μCForward turn-on timetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)TYPICAL CHARACTERISTICS   Package Picture Datasheet PDF DownloadYou can download the datasheet of IRF840 from the link given below.IRF840-Datasheet IRF840 FAQWhat are power MOSFETs used for?A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.How do you test a MOSFET with a multimeter in a circuit?1) Hold the MosFet by the case or the tab but don't touch the metal parts of the test probes with any of the other MosFet's terminals until needed. 2) First, touch the meter positive lead onto the MosFet's 'Gate'. 3) Now move the positive probe to the 'Drain'. You should get a 'low' reading.How much voltage can a MOSFET handle?A MOSFET can handle only its maximum rated voltage, called the “blocking voltage” or “absolute maximum voltage rating.” Some power MOSFETs can handle as many as 1,500 volts, while more typical high-voltage power MOSFETs can handle up to 100 V. 

CatalogDescriptionFeaturesApplicationsPin AssignmentsLogic DiagramFunction TableAbsolute Maximum RatingsRecommended Operating ConditionsElectrical CharacteristicsSwitching CharacteristicsOperating CharacteristicsParameter Measurement InformationOrdering Information Marking InformationPackage Outline DimensionsSuggested Pad Layout74HC00 Datasheet74HC00 FAQ DescriptionThe 74HC00 provides provides four independent 2-input NAND gates with standard push-pull outputs. The device is designed for operation with a power supply range of 2.0V to 6.0V. FeaturesWide Supply Voltage Range from 2.0V to 6.0VSinks or Sources 4mA at VCC = 4.5VCMOS Low Power ConsumptionSchmitt Trigger Action at All InputsESD Protection Exceeds JESD 22200-V Machine Model (A115-A)2000-V Human Body Model (A114-A)Exceeds 1000-V Charged Device Model (C101C)Range of Package Options SO-14 and TSSOP-14Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)Halogen and Antimony Free. “Green” Device (Note 3) Notes:1.No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2.See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3.Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. ApplicationsGeneral Purpose LogicWide array of products such as:PCs, Networking, Notebooks, NetbooksComputer Peripherals, Hard Drives, CD/DVD ROMTV, DVD, DVR, Set Top Box Pin Assignments Pin DescriptionsPin NumberPin NameFunction11AData Input21BData Input31YData Output42AData Input52BData Input62YData Output7GNDGround83YData Output93AData Input103BData Input114YData Output124AData Input134BData Input14VCCSupply Voltage Logic Diagram Function TableInputsOutputABYLLHLHHHLHHHL Absolute Maximum Ratings(Note 4) (@TA = +25°C, unless otherwise specified.)SymbolDescriptionRatingUnitESD HBMHuman Body Model ESD Protection2KVESD CDMCharged Device Model ESD Protection1KVESD MMMachine Model ESD Protection200VVCCSupply Voltage Range-0.5 to +7.0VVIInput Voltage Range (Note 5)-0.5 to +7.0VIIKInput Clamp Current VI < -0.5V or Vi > VCC +0.5V±20mAIOKOutput Clamp Current VO < -0.5V or VO > VCC +0.5V±20mAIOContinuous output current -0.5V < VO VCC +0.5V+/- 25mAICCContinuous current through Vcc50mAIGNDContinuous current through GND-50mATJOperating Junction Temperature-40 to +150°CTSTGStorage Temperature-65 to +150°CPTOTTotal Power Dissipation500mW Notes:4.Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. VCCto the extent the maximum clamp current is exceeded.5.Input Voltage cannot exceed VCCto the extent the Maximum clamp current is exceeded. Recommended Operating Conditions(Note 6) (@TA = +25°C, unless otherwise specified.)SymbolParameterConditionsMinMaxUnitVCCSupply Voltage 2.06.0VVIInput Voltage 0VCCVVOOutput Voltage 0VCCVΔt/ΔVInput transition rise or fall rateVCC = 2.0V 625ns/VVCC = 4.5V 140VCC = 6.0V 85TAOperating Free-Air Temperature -40+125°C Note:6.Unused inputs should be held at VCC or Ground. Electrical Characteristics (@TA = +25°C, unless otherwise specified.)SymbolParameterTest ConditionsVCCTA = -40°C to 85°CTA = -40°C to 125°CUnitMinMaxMinMaxVIHHigh-level Input Voltage 2.0V1.5 1.5 V 4.5V3.15 3.15  6.0V4.2 4.2 VILLow-level input voltage 2.0V 0.5 0.5V 4.5V 1.35 1.35 6.0V 1.8 1.8VOHHigh-level Output VoltageIOH = -20μA2.0V1.9 1.9 VIOH = -20μA4.5V4.4 4.4 IOH = -20μA6.0V5.9 5.9 IOH = -4.0mA4.5V3.84 3.7 IOH = -5.2mA6.0V5.34 5.2 VOLLow-level Output VoltageIOL = 20μA2.0V 0.1 0.1VIOL = 20μA4.5V 0.1 0.1IOL = 20μA6.0V 0.1 0.1IOL = 4mA4.5V 0.33 0.44IOL = 5.2mA6.0V 0.33 0.44IIInput CurrentVI =GND to 5.5V6.0V ± 1 ± 1μAICCSupply CurrentVI = GND or VCC, IO = 06.0V 20 40μA Switching CharacteristicsSymbolParameterTest ConditionsVCCTA = +25°C-40°C to +85°C-40°C to +125°CUnitMinTyp.MaxMaxMaxtPDPropagation Delay AN to YNFigure 1 CL = 50pF2.0V—2590115135ns4.5V—91823276.0V—7152023ttTransition TimeFigure 1 CL = 50pF2.0V—197595110ns4.5V—71519226.0V—6131619 Operating Characteristics(@TA = +25°C, unless otherwise specified.)ParameterTest ConditionsVCC = 6VUnitTypCpdPower Dissipation Capacitance per Gatef = 1 MHz22pFCIInput CapacitanceVI = VCC – or GND4pFParameter Measurement InformationVccInputsVMCLVItr/tf2.0V to 6.0VVCC6nsVCC/215pF,50pF Load Circuit and Voltage WaveformsNotes:A.Includes test lead and test apparatus capacitance.B.All pulses are supplied at pulse repetition rate ≤ 1 MHzC.Inputs are measured separately one transition per measurementD.tPLHand tPHLare the same as tPD Ordering InformationDevicePackage CodePackaging7” Tape and ReelQuantityPart Number Suffix74HC00S14-13S14SO-142500/Tape & Reel-1374HC00T14-13T14TSSOP-142500/Tape & Reel-13 Marking InformationPart NumberPackage74HC00S14SO-1474HC00T14TSSOP-14 Package Outline Dimensions(All dimensions in mm.)Package Type: SO-14SO-14 Package Outline Dimensions SO-14DimMinMaxA1.471.73A10.100.25A21.45 TypB0.330.51D8.538.74E3.803.99e1.27 TypH5.806.20L0.381.27q0°8°All Dimensions in mm  Package Type: TSSOP-14TSSOP-14 Package Outline Dimensions TSSOP-14DimMinMaxa17° (4X)a20°8°A4.95.10B4.304.50C¾1.2D0.81.05F1.00 TypF10.450.75G0.65 TypK0.190.30L6.40 TypAll Dimensions in mm Suggested Pad LayoutPackage Type: SO-14 DimensionsValue (in mm)X0.60Y1.50C15.4C21.27 Package Type: TSSOP-14 DimensionsValue (in mm)X0.45Y1.45C15.9C20.65 74HC00 DatasheetYou can download the datasheet of 74HC00 from the link given below:74HC00 Datasheet 74HC00 FAQWhat is 74HC00 IC?The 74HC00 is a 14 Pin Quad 2-Input NAND Gate SMD Package IC. This device contains four independent gates each of which performs the logic NAND function. What is 7400 quad two-input NAND gate DIP IC?74HC00 basically used for performing NAND function. The IC has four NAND gates in it, each gate can be used separately. When you want logic inverter, NAND gates in this chip can be reconfigured to make them NOT gate. As mentioned earlier 74HC00 has four NAND gates. What is NAND truth table?The NAND gate is a combination of an AND gate and NOT gate. They are connected in cascade form. It is also called Negated And gate. The NAND gate provides the false or low output only when their outputs is high or true. What is the purpose of 7400 IC?7400 IC is the most widely used TTL (Transistor-Transistor Logic) device in the world. It contains four independent two-input NAND gates. Its popularity is based on the fact that any logic gate function can be created using only NAND gates. Does NAND gate have 4 inputs?As with the AND function seen previously, the NAND function can also have any number of individual inputs and commercial available NAND Gate IC's are available in standard 2, 3, or 4 input types. If additional inputs are required, then the standard NAND gates can be cascaded together to provide more inputs for example. 

 CatalogDescriptionCAD ModelsPin ConfigurationBlock DiagramFeaturesApplicationsDatasheetProduct AttributesManufacturerUsing WarningDescriptionThe AD9364 is a high performance, highly integrated radio frequency (RF) Agile Transceiver designed for use in 3G and 4G base station applications. Its programmability and wideband capability make it ideal for a broad range of transceiver applications. The device combines an RF front end with a flexible mixed-signal baseband section and integrated frequency synthesizers, simplifying design-in by providing a configurable digital interface to a processor. The AD9364 operates in the 70 MHz to 6.0 GHz range, covering most licensed and unlicensed bands. Channel bandwidths from less than 200 kHz to 56 MHz are supported. The direct conversion receiver has state-of-the-art noise figure and linearity. The receive (Rx) subsystem includes independent automatic gain control (AGC), dc offset correction, quadrature correction, and digital filtering, thereby eliminating the need for these functions in the digital baseband. The AD9364 also has flexible manual gain modes that can be externally controlled. Two high dynamic range ADCs digitize the received I and Q signals and pass them through configurable decimation filters and 128-tap FIR filters to produce a 12-bit output signal at the appropriate sample rate. CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model Pin Configuration Figure: Pin Configuration Block Diagram Figure: Block Diagram FeaturesRF 1 × 1 transceiver with integrated 12-bit DACs and ADCsBand: 70 MHz to 6.0 GHzSupports time division duplex (TDD) and frequency division      duplex (FDD) operationTunable channel bandwidth (BW): <200 kHz to 56 MHz3-band receiver: 3 differential or 6 single-ended inputsSuperior receiver sensitivity with a noise figure of <2.5 dBRx gain controlReal-time monitor and control signals for manual gainIndependent automatic gain control2-band differential output transmitterHighly linear broadband transmitterTx EVM: ≤−40 dBTx noise: ≤−157 dBm/Hz noise floorTx monitor: ≥66 dB dynamic range with 1 dB accuracyIntegrated fractional-N synthesizers      2.4 Hz maximum local oscillator (LO) step sizeMultichip synchronizationCMOS/LVDS digital interface ApplicationsPoint to point communication systemsFemtocell/picocell/microcell base stationsGeneral-purpose radio systems DatasheetYou can download the datasheet from the link given below:AD9364BBCZ-Datasheet Product AttributesManufacturer:Analog Devices Inc.Product Category:RF TransceiverType:LTE, WiMAXFrequency Range:70 MHz to 6 GHzSupply Voltage - Min:1.267 VSupply Voltage - Max:1.33 VOutput Power:8 dBmMinimum Operating Temperature:- 40 ℃Maximum Operating Temperature:+ 85 ℃Interface Type:4-WirePackage / Case:BGA-144Packaging:TraySeries:AD9364Technology:SiBrand:Analog DevicesMounting Style:SMD/SMTMaximum Operating Frequency:6 GHzMoisture Sensitive:YesNumber of Receivers:1Number of Transmitters:1Product Type:RF TransceiverFactory Pack Quantity:184Subcategory:Wireless & RF Integrated CircuitsUnit Weight:0.029630 oz ManufacturerAnalog Devices, Inc. (ADI), also known simply as Analog, is an American multinational semiconductor company specializing in data conversion, signal processing and power management technology, headquartered in Wilmington, Massachusetts. In 2012, Analog Devices led the worldwide data converter market with a 48.5% share, according to analyst firm Databeans. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit.