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IRF840 Power MOSFET Datasheet PDF Download [FAQ]

  • Contents

Catalog

FEATURES

DESCRIPTION

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

TYPICAL CHARACTERISTICS

Package Picture

Datasheet PDF Download

IRF840 FAQ

FEATURES

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements


DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 

 

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF840PbF

Lead (Pb)-free and halogen-free

IRF840PbF-BE3


ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

500

V

Gate-source voltage

VGS

± 20

V

Continuous drain current

VGS at 10 V

TC = 25 °C

ID

8.0

 

A

TC = 100 °C

5.1

Pulsed drain current a

IDM

32

Linear derating factor

 

1.0

W/°C

Single pulse avalanche energy b

EAS

510

mJ

Repetitive avalanche current a

IAR

8.0

A

Repetitive avalanche energy a

EAR

13

mJ

Maximum power dissipation

TC = 25 °C

PD

125

W

Peak diode recovery dV/dt c

dV/dt

3.5

V/ns

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d

For 10 s

 

300

Mounting torque

6-32 or M3 screw

 

10

lbf · in

1.1

N · m


THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-

62

 

°C/W

Case-to-sink, flat, greased surface

RthCS

0.50

-

Maximum junction-to-case (drain)

RthJC

-

1.0


SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

500

-

-

V

VDS temperature coefficient

DVDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.78

-

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-source leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero gate voltage drain current

IDSS

VDS = 500 V, VGS = 0 V

-

-

25

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 4.8 A b

-

-

0.85

L

Forward transconductance

gfs

VDS = 50 V, ID = 4.8 A b

4.9

-

-

S

Dynamic

Input capacitance

Ciss

VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

-

1300

-

 

pF

Output capacitance

Coss

-

310

-

Reverse transfer capacitance

Crss

-

120

-

Total gate charge

Qg

 

VGS = 10 V

 

ID = 8 A, VDS = 400 V,

see fig. 6 and 13 b

-

-

63

 

nC

Gate-source charge

Qgs

-

-

9.3

Gate-drain charge

Qgd

-

-

32

Turn-on delay time

td(on)

 

VDD = 250 V, ID = 8 A

Rg = 9.1 L, RD = 31 L, see fig. 10 b

-

14

-

 

 

ns

Rise time

tr

-

23

-

Turn-off delay time

td(off)

-

49

-

Fall time

tf

-

20

-

Internal drain inductance

LD

Between lead, D

6 mm (0.25") from package and center of

G

die contact

S

-

4.5

-

 

 

nH

Internal source inductance

LS

-

7.5

-

Gate input resistance

Rg

f = 1 MHz, open drain

0.6

-

2.8

L

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

IS

MOSFET symbol

D

showing the

integral reverse G

p - n junction diode

S

-

-

8.0

 

A

Pulsed diode forward current a

ISM

-

-

32

Body diode voltage

VSD

TJ = 25 °C, IS = 8 A, VGS = 0 V b

-

-

2.0

V

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b

-

460

970

ns

Body diode reverse recovery charge

Qrr

-

4.2

8.9

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)


TYPICAL CHARACTERISTICS

IRF840-Yypical-Characteristics

 

IRF840-Yypical-Characteristics-02

 

IRF840-Yypical-Characteristics-03

 

IRF840-Yypical-Characteristics-04


Package Picture

Figure-IRF840-Package-Picture

 

Datasheet PDF Download

You can download the datasheet of IRF840 from the link given below.

IRF840-Datasheet

 

IRF840 FAQ

What are power MOSFETs used for?

A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.


How do you test a MOSFET with a multimeter in a circuit?

1) Hold the MosFet by the case or the tab but don't touch the metal parts of the test probes with any of the other MosFet's terminals until needed. 2) First, touch the meter positive lead onto the MosFet's 'Gate'. 3) Now move the positive probe to the 'Drain'. You should get a 'low' reading.


How much voltage can a MOSFET handle?

A MOSFET can handle only its maximum rated voltage, called the “blocking voltage” or “absolute maximum voltage rating.” Some power MOSFETs can handle as many as 1,500 volts, while more typical high-voltage power MOSFETs can handle up to 100 V.

 

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