The Kynix Components

Product OverviewThe MPU-60X0 is the world’s first integrated 6-axis MotionTracking device that combines a 3-axis gyroscope, 3-axis accelerometer, and a Digital Motion Processor™ (DMP) all in a small 4x4x0.9mm package. With its dedicated I2C sensor bus, it directly accepts inputs from an external 3-axis compass to provide a complete 9-axis MotionFusion™ output. The MPU-60X0 MotionTracking device, with its 6-axis integration, on-board MotionFusion™, and run-time calibration firmware, enables manufacturers to eliminate the costly and complex selection, qualification, and system level integration of discrete devices, guaranteeing optimal motion performance for consumers. The MPU-60X0 is also designed to interface with multiple noninertial digital sensors, such as pressure sensors, on its auxiliary I2C port. The MPU-60X0 is footprint compatible with the MPU-30X0 family. The MPU-6000 and MPU-6050 are identical, except that the MPU-6050 supports the I2C serial interface only, and has a separate VLOGIC reference pin. The MPU-6000 supports both I2C and SPI  interfaces and has a single supply pin, VDD, which is both the device’s logic reference supply and the analog supply for the part. This blog will introduce MPU-6050 systematically from its features, pinout to its specifications, applications, also including MPU-6050 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionMPU-6050 FeaturesMPU-6050 PinoutMPU-6050 ApplicationsMPU-6050 CAD ModelsMPU-6050 Circuit DiagramMPU-6050 Block DiagramMPU-6050 PackageMPU-6050 SpecificationMPU-6050 ManufacturerMPU-6050 DatasheetUsing WarningsMPU-6050 FAQ Related Video Introduction Video: Build an Electronic Level with MPU-6050 and Arduino  MPU-6050 Video Description: Today we will be working with the MPU-6050, a low-cost Inertial Measurement Unit, or IMU. This device has a lot of different applications in many fields including robotics, gaming, quadcopters, and IoT devices. The MPU-6050 has an internal gyroscope and accelerometer. It's an inexpensive device, available in several packages and modules. The module I am using is very common and has a built-0in voltage regulator so it can work with 5-volt logic. We will start by looking at the MPU-6050 internals, as well as at the pinout of the module I am using. Next, we will load a couple of libraries into our Arduino IDE and ruins some sample code to display Pitch, Yaw, and Roll. After that, we will build a small project, an electronic level. Our level will display on an LCD and will also use 5 LEDs to give a good visual indication of how level the surface is. MPU-6050 FeaturesDigital-output X-, Y-, and Z-Axis angular rate sensors (gyroscopes) with a user-programmable fullscale range of ±250, ±500, ±1000, and ±2000°/secExternal sync signal connected to the FSYNC pin supports image, video and GPS synchronizationIntegrated 16-bit ADCs enable simultaneous sampling of gyrosEnhanced bias and sensitivity temperature stability reduces the need for user calibrationImproved low-frequency noise performanceDigitally-programmable low-pass filterGyroscope operating current: 3.6mAStandby current: 5µAFactory calibrated sensitivity scale factorUser self-test MPU-6050 PinoutThe following figure is the diagram of MPU-6050 pinout. MPU-6050 Pinout MPU-6050 ApplicationsBlurFree™ technology (for Video/Still Image Stabilization)AirSign™ technology (for Security/Authentication)TouchAnywhere™ technology (for “no touch” UI Application Control/Navigation)MotionCommand™ technology (for Gesture Short-cuts)Motion-enabled game and application frameworkInstantGesture™ iG™ gesture recognitionLocation based services, points of interest, and dead reckoningHandset and portable gamingMotion-based game controllers3D remote controls for Internet connected DTVs and set top boxes, 3D miceWearable sensors for health, fitness and sportsToys MPU-6050 CAD ModelsThe following are MPU-6050 Symbol, Footprint, and 3D Model. MPU-6050 Symbol MPU-6050 Footprint MPU-6050 3D Model MPU-6050 Circuit DiagramThe following is the circuit diagram of MPU-6050. MPU-6050 Typical Operating Circuit MPU-6050 Block DiagramThe following figure shows the block diagram of MPU-6050. MPU-6050 Block Diagram MPU-6050 PackageThe following diagram shows the MPU-6050 package. MPU-6050 Package MPU-6050 SpecificationProduct AttributeAttribute ValueManufacturer:TDKProduct Category:IMUs - Inertial Measurement UnitsSensor Type:6-axisSensing Axis:X, Y, ZSensitivity:340 LSB/CAcceleration:10000 gOutput Type:DigitalInterface Type:I2COperating Supply Current:3.9 mASupply Voltage - Min:2.375 VSupply Voltage - Max:3.46 VMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 105 CMoisture Sensitive:YesSubcategory:Sensors MPU-6050 ManufacturerInvenSense, Inc, a TDK Group Company: InvenSense is part of the Sensor System Business Company within TDK and is the industry leader in MEMS Motion, Audio, and Pressure Solutions for the consumer, industrial, automotive, and IoT market segments. With a very robust portfolio of MEMS 3/6/7/9 axis motion sensors, accompanied by the highest performing MEMS audio microphones, and pressure sensors - TDK continues to push the boundaries of performance and quality; setting new standards of innovation across multiple industries. MPU-6050 DatasheetYou can download MPU-6050 datasheet from the link given below:MPU-6050 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. MPU-6050 FAQWhat is the MPU-60X0 compatible with? Footprint compatible with the MPU-30X0 family. What is the MPU-60X0 designed to interface with on its auxiliary I 2C port?Pressure sensors. What is the main supply pin for the MPU-6000?VDD. What are the units of inertial measurement?An Inertial Measurement Unit (IMU) is a device that can measure and report specific gravity and angular rate of an object to which it is attached. An IMU typically consists of: Gyroscopes: providing a measure angular rate. Accelerometers: providing a measure specific force/acceleration. What can IMUs measure?As you've seen, IMUs are used to measure acceleration, angular velocity and magnetic fields, and, when combined with sensor fusion software, they can be used to determine motion, orientation and heading. They're found in many applications across consumer electronics and the industrial sector.

Product OverviewThe 1SMA5917BT3G is a surface mount Voltage Regulator Zener Diode with a void-free transfer-molded plastic case. Their external surfaces are corrosion-resistant and leads are readily solderable. This 1.5W Zener diode is designed for general-purpose voltage regulation applications.CatalogProduct OverviewCAD ModelsPackage DimensionsGeneric Marking Diagram1SMA5917BT3G FeaturesOther Names (In U.S.A)1SMA5917BT3G Product Attributes1SMA5917BT3G ApplicationsAlternate PartsUsing Warnings1SMA5917BT3G vs 1SMA5917BT3FAQCAD Models1SMA5917BT3G Symbol 1SMA5917BT3G Footprint 1SMA5917BT3G 3D ModelPackage DimensionsPackage DimensionsSoldering FootprintSoldering FootprintGeneric Marking DiagramGeneric Marking Diagram1SMA5917BT3G Features• Standard Zener breakdown voltage range -3.3 to 68V• ESD rating of Class 3 (>16kV) per human body model• Flat handling surface for accurate placement• Package design for top slide or bottom circuit board mounting• Low profile package• Ideal replacement for MELF packages• AEC-Q101 qualified and PPAP capable• Pb-free are availableOther Names (In U.S.A)1SMA5917BT3GOSTR1SMA5917BT3GOSCT1SMA5917BT3GOSDKR1SMA5917BT3G Product AttributesSpecificationsValuesCase/PackageSMAContact PlatingTinMaterialPlasticNumber of Pins2Element ConfigurationSingleESD ProtectionYESForward Voltage1.5 VImpedance5 ΩMax Operating Temperature150 °CMax Power Dissipation1.5 WMax Reverse Leakage Current2.5 µAMin Operating Temperature-65 °CPackagingCut TapePeak Reverse Current2.5 µAPower Dissipation500 mWPower Rating1.5 WSchedule B8541100050Test Current79.8 mATolerance5 %Voltage Rating (DC)4.7 VVoltage Tolerance5 %Working Voltage4.7 VZener TypeVoltage RegulatorZener Current319 mAZener Voltage4.7 VHeight2.05 mmLength4.57 mmWidth2.92 mmHalogen FreeHalogen FreeLead FreeLead FreeRadiation HardeningNOREACH SVHCNo SVHCRoHSCompliant1SMA5917BT3G ApplicationsIndustrialAlternate PartsPTZ4.7A, 1SMA5917BT3, SMAZ4V7-7, SMAZ4V7-13, SMAZ4V7Using WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.1SMA5917BT3G vs 1SMA5917BT3Specifications1SMA5917BT3G1SMA5917BT3Pbfree CodeYES*Part Life Cycle CodeActiveTransferredIhs ManufacturerON SEMICONDUCTORMOTOROLA INCPackage DescriptionR-PDSO-C2R-PDSO-C2Pin Count22Manufacturer Package Code403D-02CASE 403B-01Reach Compliance Codenot_compliantunknownECCN CodeEAR99EAR99HTS Code8541.10.00.508541.10.00.50Samacsys DescriptionON Semiconductor 1SMA5917BT3G Zener Diode, 4.7V 5% 1.5 W SMT 2-Pin SMA*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLESINGLEDiode Element MaterialSILICONSILICONDiode TypeZENER DIODEZENER DIODEDynamic Impedance-Max5 Ω500 ΩJESD-30 CodeR-PDSO-C2R-PDSO-C2JESD-609 Codee3e0Moisture Sensitivity Level1*Number of Elements11Number of Terminals22Operating Temperature-Max150 °C150 °COperating Temperature-Min-65 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)260*PolarityUNIDIRECTIONALUNIDIRECTIONALPower Dissipation-Max0.5 W0.9 WQualification StatusNot QualifiedNot QualifiedReference Voltage-Nom4.7 V4.7 VSurface MountYESYESTechnologyZENERZENERTerminal FinishTin (Sn)Tin/Lead (Sn/Pb)Terminal FormC BENDC BENDTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)40*Voltage Tol-Max5%5%Working Test Current79.8 mA79.8 mABase Number Matches21Knee Impedance-Max*500 ΩReverse Current-Max*2.5 µAPbfree Code YES*FAQWhat is the Max Power Dissipation of 1SMA5917BT3G?1.5 W What is the Max Operating Temperature of 1SMA5917BT3G?150 °C What is the Max Reverse Leakage Current of 1SMA5917BT3G?2.5 µA What is the Min Operating Temperature of 1SMA5917BT3G? -65 °C

Product OverviewThe LTC6655 is a complete family of precision bandgap voltage references, offering exceptional noise and drift performance. This low noise and drift is ideally suited for the high resolution measurements required by instrumentation and test equipment. In addition, the LTC6655 is fully specified over the temperature range of –40°C to 125°C, ensuring its suitability for demanding automotive and industrial applications. Advanced curvature compensation allows this bandgap reference to achieve a drift of less than 2ppm/°C with a predictable temperature characteristic and an output voltage accurate to ±0.025%, reducing or eliminating the need for calibration. The LTC6655 can be powered from as little as 500mV above the output voltage to as much as 13.2V. Superior load regulation with source and sink capability, coupled with exceptional line rejection, ensures consistent performance over a wide range of operating conditions. A shutdown mode is provided for low power applications. This blog will introduce LTC6655 systematically from its features, pinout to its specifications, applications, also including LTC6655 datasheet and so much more. Video: What is a voltage reference? CatalogProduct OverviewLTC6655 FeaturesLTC6655 PinoutLTC6655 ApplicationsLTC6655 Typical ApplicationsLTC6655 Block DiagramLTC6655 SpecificationLTC6655 ManufacturerLTC6655 DatasheetUsing WarningsLTM4622 FAQ LTC6655 FeaturesLow Noise: 0.25ppmP-P (0.1Hz to 10Hz) 625nVP-P for the LTC6655-2.5Low Drift: 2ppm/°C MaxHigh Accuracy: ±025% MaxNo Humidity Sensitivity (LS8 Package)Thermal Hysteresis (LS8): 30ppm (–40°C to 85°C)Long-Term Drift (LS8): 20ppm/√kHr100% Tested at –40°C, 25°C and 125°CLoad Regulation: <10ppm/mASinks and Sources Current: ±5mALow Dropout: 500mVMaximum Supply Voltage: 13.2VLow Power Shutdown: <20μA MaxAvailable Output Voltages: 1.25V, 2.048V, 2.5V, 3V, 3.3V, 4.096V, 5VAvailable in an 8-Lead MSOP and High Stability Hermetic 5mm × 5mm LS8 Packages LTC6655 PinoutThe following figure is the diagram of LTC6655 pinout. LTC6655 Pinout1 LTC6655 Pinout2 LTC6655 ApplicationsInstrumentation and Test EquipmentHigh Resolution Data Acquisition SystemsWeigh ScalesPrecision Battery MonitorsPrecision RegulatorsMedical Equipment LTC6655 Typical ApplicationsThe following figures shows the typical applications of LTC6655. Basic Connection Low Frequency 0.1Hz to 10Hz Noise LTC6655 Block DiagramThe following figure shows the block diagram of LTC6655. LTC6655 Block Diagram LTC6655 SpecificationBrand Name:Analog Devices IncLength:3 mmOperating Temperature-Max:125 °COperating Temperature-Min:-40 °COutput Voltage-Max:5.0025 VOutput Voltage-Min:4.9975 VOutput Voltage-Nom:5 VPeak Reflow Temperature (Cel):260Seated Height-Max:1.1 mmSupply Current-Max (Isup):7.5 mASupply Voltage-Max (Vsup):13.2 VSupply Voltage-Min (Vsup):5.197 V LTC6655 ManufacturerLinear Technology and Analog Devices have joined together. Analog Devices is a world leader in the design, manufacture, and marketing of a broad portfolio of high performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits (ICs) used in virtually all types of electronic equipment. LTC6655 DatasheetYou can download this datasheet for LTC6655–Datasheet from the link given below:LTC6655 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. LTM4622 FAQWhat are the benefits of using the ltc6655?This presentation will explain the significance of noise in high performance instrumentation and test equipment, and provide an overview of the LTC6655 main features and benefits. What is the temperature range of the ltc6655?This low noise and drift is ideally suited for the high resolution measurements required by instru - mentation and test equipment. In addition, the LTC6655 is fully specified over the temperature range of 40°C – to 125°C, ensuring its suitability for demanding auto- motive and industrial applications. How much voltage does ltc6655 low dropout reference use?The LTC6655 low dropout series references can be powered from as little as 500 mV above the output voltage or as much as 13.2 V. Superior load regulation and source and sink capabilities coupled with exceptional line rejection give consistent performance over a wide range of line and load conditions. Is there a shutdown mode for the ltc6655?A shutdown mode is provided for low power applications. The LTC6655 references are offered in an 8-lead MSOP package and an 8-lead LS8 package. The LS8 is a 5mm × 5mm surface mount hermetic package that pro- vides outstanding stability. All registered trademarks and trademarks are the property of their respective owners. Why is voltage reference needed?A voltage reference is a precision device specifically designed to maintain a constant output voltage, even as parameters such as ambient temperature or supply voltage change. The precision of a voltage reference enables its use in several differ- ent types of applications beyond a data converter.

Product OverviewThe TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. This blog will introduce TIP102 systematically from its features, pinout to its specifications, applications, also including TIP102 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionTIP102 FeaturesTIP102 PinoutTIP102 EquivalentsTIP102 ApplicationsTIP102 CAD ModelsTIP102 Schematic DiagramTIP102 Circuit DiagramTIP102 PackageTIP102 SpecificationTIP102 ManufacturerTIP102 DatasheetUsing WarningsTIP102 FAQ Related Video Introduction Video:Transistors - NPN & PNP - Basic Introduction TIP102 Video Description: This electronics video tutorial provides a basic introduction into NPN and PNP transistors which are known as BJTs or Bipolar Junction Transistors.  This video discusses the 3 operating regions of a transistor - the cutoff, active, and saturation region.  It also explains how the transistors act as switches and how to determine the current and voltages in a transistor base bias circuit. TIP102 FeaturesHigh DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdcCollector-Emitter Sustaining Voltage--@ 30 mAdcVCEO(sus) = 60 Vdc (Min)-TIP100, TIP105VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 AdcVCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 AdcMonolithic Construction with Built-In Base-Emitter Shunt ResistorsTO-220 AB Compact PackagePb-Free Packages are Available TIP102 PinoutThe following figure is the diagram of TIP102 pinout. TIP102 Pinout TIP102 EquivalentsYou can replace the TIP102 with the 2N6045, 2N6045G, BD543C, BD545C, BD649. TIP102 Applications■ linear and switching industrial equipment■ audio power amplifier■ general power switching■ DC-AC converter■ easy driver for low voltage DC motor TIP102 CAD ModelsThe followings are TIP102 Symbol, Footprint, and 3D Model. TIP102 Symbol TIP102 Footprint TIP102 3D Model TIP102 Schematic DiagramThe following is the internal schematic diagram of TIP102. TIP102 Internal Schematic Diagram TIP102 Circuit DiagramThe following is the circuit diagram of TIP102. Switching Times Test Circuit TIP102 PackageThe following diagram shows the TIP102 package. TIP102 Package TIP102 SpecificationAttributeValueTransistor TypeNPNMaximum Continuous Collector Current8 AMaximum Collector Emitter Voltage100 VMaximum Emitter Base Voltage5 VPackage TypeTO-220Mounting TypeThrough HolePin Count3Transistor ConfigurationSingleNumber of Elements per Chip1Minimum DC Current Gain200Maximum Collector Base Voltage100 VMaximum Collector Emitter Saturation Voltage2.5 VMaximum Collector Cut-off Current0.05mAMinimum Operating Temperature-65 CHeight9.15mmWidth4.6mmDimensions10.4 x 4.6 x 9.15mmMaximum Operating Temperature+150 CLength10.4mm TIP102 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. TIP102 DatasheetYou can download TIP102 datasheet from the link given below:TIP102 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. TIP102 FAQWhat is a TIP102?The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. What are Darlington transistors used for?Darlington transistors are mainly used in switching and amplification applications for delivering a very high DC current gain. Some of the key applications are high and low side switches, sensor amplifiers and audio amplifiers. How does an NPN transistor work?The NPN transistor is designed to pass electrons from the emitter to the collector (so conventional current flows from collector to emitter). The emitter "emits" electrons into the base, which controls the number of electrons the emitter emits. The transistor is kind of like an electron valve. What does NPN transistor stand for?NPN stands for Negative, Positive, Negative. Also known as sinking. ... In a NPN transistor, current flows from the emitter to the collector. The transmitter is powered on when sufficient current is supplied to the base of the transistor. The higher the current the more an NPN transistor will be powered on. What is the difference between PNP and NPN transistor?An NPN transistor has a piece of P-type silicon (the base) sandwiched between two pieces of N-type (the collector and emitter). In a PNP transistor, the type of the layers are reversed. NPN and PNP transistors have very similar schematic symbols. The only difference is the direction of the arrow on the emitter.

Product OverviewThis N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. This blog will introduce IRFP250 systematically from its features, pinout to its specifications, applications, also including IRFP250 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionIRFP250 FeaturesIRFP250 PinoutIRFP250 ApplicationsIRFP250 EquivalentsIRFP250 Circuit DiagramIRFP250 PackageIRFP250 SpecificationIRFP250 ManufacturerIRFP250 DatasheetUsing WarningsIRFP250 FAQ Related Video Introduction Video: Power Amplifier Class D 6 Mosfets IRFP250 IRFP250 FeaturesDynamic dV/dt RatingRepetitive Avalanche RatedIsolated Central Mounting HoleFast SwitchingEase of ParallelingSimple Drive RequirementsCompliant to RoHS Directive 2002/95/EC IRFP250 PinoutThe following figure is the diagram of IRFP250 pinout.VDSS = 200VRDS(on) = 0.075ΩID = 30A IRFP250 Pinout IRFP250 ApplicationsLED flashers or dimmersLow power analog inverters or convertersSmall signal switching Switching high voltage loads  IRFP250 EquivalentsIRFP250 is an n-channel advanced power mosfet. The equivalents of IRFP250 are irfZ44, irf9Z34N, 2n7000, and bs170. Light dimmers  and speed control of the motors are good with the equals or IRFP250 because they have good switching characteristics. IRFP250 Circuit DiagramThe following is the circuit diagram of IRFP250. Switching Time Test Circuit Unclamped Inductive Test Circuit Gate Charge Test Peak Diode Recovery dV/dt Test Circuit IRFP250 PackageThe following diagram shows the IRFP250 package. IRFP250 Package IRFP250 SpecificationProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:MOSFETRoHS:NTechnology:SiMounting Style:Through HolePackage / Case:TO-247-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:200 VId - Continuous Drain Current:33 ARds On - Drain-Source Resistance:85 mOhmsVgs - Gate-Source Voltage:- 20 V, + 20 VMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CPd - Power Dissipation:180 WChannel Mode:EnhancementPackaging:TubeConfiguration:SingleFall Time:40 nsHeight:20.15 mmLength:15.75 mmProduct Type:MOSFETRise Time:50 nsSeries:IRFP250Factory Pack Quantity:30 IRFP250 ManufacturerSTMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip(SoC) technology and its products play a key role in enabling today's convergence trends. IRFP250 DatasheetYou can download IRFP250 datasheet from the link given below:IRFP250 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. IRFP250 FAQWhat is the difference between power Mosfet and MOSFET?Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET. What does MOSFET power mean?Power MOSFET is a type of metal oxide semiconductor field-effect transistor used to switch large amounts of current. Power MOSFETs are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Engineering Glossary. What are the applications of power Mosfet?Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications. What is the disadvantage of MOSFET?Has a short life. Required repeated calibration for accurate dose measurement. They have very susceptible to overload voltage, hence due to installation special handling is to be required. What are advantages of power Mosfet?The power MOSFET is the most common power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair.

CatalogDEVICESABSOLUTE MAXIMUM RATINGSTHERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICSDYNAMIC CHARACTERISTICSSWITCHING CHARACTERISTICSPACKAGE DIMENSIONS2N2219 Datasheet2N2219 FAQ DEVICES2N22182N22192N2218A2N2219A2N2218AL2N2219ALAlso available in Radiation Hardened versions. See datasheet for JANSR2N2218 & JANSR2N2219 ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)Parameters / Test ConditionsSymbol2N22182N22192N221A; L2N2219A; LUnitCollector-Emitter VoltageVCEO3050VdcCollector-Base VoltageVCBO6075VdcEmitter-Base VoltageVEBO5.06.0VdcCollector CurrentIC800mATotal Power Dissipation @ TA  = +25°C@ TC = +25°CPT0.83.0WWOperating & Storage Junction Temp. RangeTop, Tstg-55 to +200°C THERMAL CHARACTERISTICSParameters / Test ConditionsSymbolValueUnitThermal Resistance, Junction-to-CaseRqJC59°C/W Note: (1) Derate linearly 4.6mW/°C above TA > +25°C          (2) Derate linearly 17.0mW/°C above TC> +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)Parameters / Test ConditionsSymbolMin.Max.UnitOFF CHARACTERTICSCollector-Emitter Breakdown VoltageIE = 10mAdc 2N2218; 2N2219 2N2218A; 2N2219A / AL V(BR)CEO 3050  VdcEmitter-Base Cutoff CurrentVEB = 5.0Vdc 2N2218; 2N2219VEB = 6.0Vdc 2N2218A; 2N2219A / ALVEB = 4.0Vdc All Types IEBO  101010 mAdchAdcCollector-Base Cutoff CurrentVCE = 30Vdc 2N2218; 2N2219VCE = 50Vdc 2N2218A; 2N2219A / AL ICES  1010 hAdc  (TA = +25°C, unless otherwise noted) (Con’t)Parameters / Test ConditionsSymbolMin.Max.UnitCollector-Base Cutoff Current VCB = 50VdcVCB = 60VdcVCB = 60Vdc VCB = 75Vdc 2N2218; 2N22192N2218; 2N22192N2218A; 2N2219A / AL2N2218A; 2N2219A / AL  ICBO  10101010 hAdcmAdchAdcmAdcON CHARACTERTICS (3)Forward-Current Transfer Ratio     IC = 0.1mAdc, VCE = 10Vdc2N2218 20  2N2219 35  2N2218A; 2N2218AL 30  2N2219A; 2N2219AL 50 IC = 1.0mAdc, VCE = 10Vdc2N2218 25150 2N2219 50325 2N2218A; 2N2218AL 35150 IC = 10mAdc, VCE = 10Vdc2N2219A; 2N2219AL2N2218hFE7535325 2N2219 75  2N2218A; 2N2218AL 40  2N2219A; 2N2219AL 100 IC = 150mAdc, VCE = 10Vdc2N2218; A; AL 40120 2N2219; A; AL 100300IC = 500mAdc, VCE = 10Vdc2N2218; A; AL 20  2N2219; A; AL 30 Collector-Emitter Saturation Voltage     IC = 150mAdc, IB = 15mAdc2N2218; 2N2219 0.4  2N2218A; 2N2219A / AL 0.3   VCE(sat) VdcIC = 500mAdc, IB = 50mAdc2N2218; 2N2219 1.6  2N2218A; 2N2219A / AL 1.0 Base-Emitter Saturation Voltage     IC = 150mAdc, IB = 15mAdc2N2218; 2N2219 0.61.3  2N2218A; 2N2219A / AL 0.61.2   VBE(sat)  VdcIC = 500mAdc, IB = 50mAdc2N2218; 2N2219  2.6  2N2218A; 2N2219A / AL  2.0  DYNAMIC CHARACTERISTICSParameters / Test ConditionsSymbolMin.Max.UnitMagnitude of Small-Signal Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz |hfe| 2.5 12 Small-Signal Forward Current Transfer Ratio    IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2218 252N22192N2218A, ALhfe50352N2219A, AL 75Output CapacitanceVCB = 10Vdc, IE = 0, 100 kHz £ f £ 1.0MHzCobo 8.0pFInput CapacitanceVEB = 0.5Vdc, IC = 0, 100 kHz £ f £ 1.0MHzCibo 25pF SWITCHING CHARACTERISTICSParameters / Test ConditionsSymbolMin.Max.UnitVCC = 30Vdc; IC = 150mAdc; IB1 = 15mAdc    Turn-On Time(See Figure 3 of MIL-PRF-19500/251) 2N2218, 2N22192N2218A, 2N2219A / AL ton  4035 hsTurn-Off Time(See Figure 4 of MIL-PRF-19500/251) 2N2218, 2N22192N2218A, 2N2219A / AL toff  250300 hs(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £0%. PACKAGE DIMENSIONS Dimensions SymbolInchesMillimetersNotes MinMaxMinMax CD.305.3357.758.51 CH.240.2606.106.60 HD.335.3708.519.40 LC.200 TP5.08 TP7LD.016.0190.410.488, 9LLSee note 14 LU.016.0190.410.488, 9L1 .050 1.278, 9L2.250 6.35 8, 9P.100 2.54 7Q .030 0.765TL.029.0450.741.143, 4TW.028.0340.710.863r .010 0.2510α45° TP45° TP7  NOTES:Dimensions are in inches.Millimeters are given for general informationBeyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28mm).Dimension TL measured from maximumBody contour optional within zone defined by HD, CD, andCD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automaticLeads at gauge plane.054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab atDimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LLAll threeThe collector shall be internally connected to theDimension r (radius) applies to both inside corners ofIn accordance with ASME Y14.5M, diameters are equivalent to φxLead 1 = emitter, lead 2 = base, lead 3 =For L suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) 2N2219 DatasheetYou can download the datasheet of 2N2219 from the link given below.2N2219-Datasheet 2N2219 FAQWhat is the dimension LL = for L suffix devices?1.5 inches What applies between L2 and LL minimum?Dimension LD What is the minimum length of TW?0.28mm What is 2n2219?2n2219 is an NPN bipolar junction transistor which is mainly used for small signal general purpose amplification and switching applications. It mainly consists of three terminals called emitter, base, and collector. What is the use of 2N2222 transistor?The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.