The Kynix Components

CatalogFeaturesDescriptionAbsolute Maximum RatingsThermal ResistanceElectrical CharacteristicsSource-Drain Ratings and CharacteristicsPackage OutlinePart Marking InformationDatasheet PDF DownloadIRF540N FAQ Features•Advanced Process Technology•Ultra Low On-Resistance•Dynamic dv/dt Rating•175°C Operating Temperature•Fast Switching•Fully Avalanche Rated•Lead-Free DescriptionAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V33 AID @ TC = 100°CContinuous Drain Current, VGS @ 10V23IDMPulsed Drain Current ➀110PD @TC = 25°CPower Dissipation130W Linear Derating Factor0.87W/°CVGSGate-to-Source Voltage± 20VIARAvalanche Current➀16AEARRepetitive Avalanche Energy➀13mJdv/dtPeak Diode Recovery dv/dt ➂7.0V/nsTJTSTGOperating Junction andStorage Temperature Range-55 to + 175 °C Soldering Temperature, for 10 seconds300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)  Thermal Resistance ParameterTyp.Max.UnitsRqJCJunction-to-Case–––1.15 °C/WRqCSCase-to-Sink, Flat, Greased Surface0.50–––RqJAJunction-to-Ambient–––62 Electrical Characteristics@ TJ = 25°C (unless otherwise specified) ParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-Source Breakdown Voltage100––––––VVGS = 0V, ID = 250µADV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient–––0.12–––V/°CReference to 25°C, ID = 1mARDS(on)Static Drain-to-Source On-Resistance––––––44mWVGS = 10V, ID = 16A     VGS(th)Gate Threshold Voltage2.0–––4.0VVDS = VGS, ID = 250µAgfsForward Transconductance21––––––SVDS = 50V, ID = 16A IDSSDrain-to-Source Leakage Current––––––25µAVDS = 100V, VGS = 0V––––––250VDS = 80V, VGS = 0V, TJ = 150°CIGSSGate-to-Source Forward Leakage––––––100nAVGS = 20VGate-to-Source Reverse Leakage––––––-100VGS = -20VQgTotal Gate Charge––––––71 nCID = 16A VDS = 80VVGS = 10V, See Fig. 6 and 13QgsGate-to-Source Charge––––––14QgdGate-to-Drain ("Miller") Charge––––––21td(on)Turn-On Delay Time–––11––– nsVDD = 50V ID = 16A RG = 5.1WVGS = 10V, See Fig. 10  trRise Time–––35–––td(off)Turn-Off Delay Time–––39–––tfFall Time–––35–––LDInternal Drain Inductance–––4.5––– nHBetween lead, D6mm (0.25in.)from package Gand center of die contact SLSInternal Source Inductance–––7.5–––CissInput Capacitance–––1960–––  pFVGS = 0V VDS = 25Vƒ = 1.0MHz, See Fig. 5CossOutput Capacitance–––250–––CrssReverse Transfer Capacitance–––40–––EASSingle Pulse Avalanche Energy–––700 185®mJIAS = 16A, L = 1.5mH Source-Drain Ratings and Characteristics ParameterMin.Typ.Max.UnitsConditionsISContinuous Source Current(Body Diode)––––––33 AMOSFET symbol Dshowing theintegral reverse Gp-n junction diode. SISMPulsed Source Current(Body Diode)➀––––––110VSDDiode Forward Voltage––––––1.2VTJ = 25°C, IS = 16A, VGS = 0V  trrReverse Recovery Time–––115170nsTJ = 25°C, IF = 16Adi/dt = 100A/µs  QrrReverse Recovery Charge–––505760nCtonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Package Outline Part Marking Information Datasheet PDF DownloadYou can download the datasheet from the link given below.IRF540N-Datasheet IRF540N FAQWhat is a power MOSFET used for?A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.What are the important power MOSFET characteristics?Because power MOSFETs are primarily used as power switches, they are expected to have low conduction and switching losses. For power management applications, conduction losses, ruggedness and avalanche capability are important features.How much power can a MOSFET handle?Modern MOSFETs can have on resistances of less than 10 milliohms. A little math shows that this device can handle 10 amps with one watt converted into waste heat (power = current2 x resistance). 

CatalogLM139 DescriptionLM139 CAD ModelsLM139 Pin ConfigurationLM139 Schematic DiagramLM139 FeaturesLM139 DatasheetLM139 SpecificationsLM139 ManufacturerUsing Warning LM139 DescriptionThis family of devices consists of four independent precision-voltage comparators with an offset voltage specification as low as 2 mV maximum for LM339A, LM239A, and LM139A. Each comparator has been designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible. These comparators also have a unique characteristic in that the input common mode voltage range includes ground even though operated from a single power supply voltage. LM139 CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model LM139 Pin Configuration Figure: Pin Configuration LM139 Schematic Diagram Figure: Schematic Diagram LM139 FeaturesWide single supply voltage range or dual supplies for all devices: +2 to +36 V or ±1 V to ±18 VVery low supply current (1.1 mA) independent of supply voltageLow input bias current: 25 nA typLow input offset current: ±5 nA typLow input offset voltage: ±1 mV typInput common-mode voltage range includes groundLow output saturation voltage: 250 mV typ;(ISINK = 4 mA)Differential input voltage range equal to the supply voltageTTL, DTL, ECL, MOS, CMOS compatible outputs LM139 DatasheetYou can download the datasheet from the link given below.LM139-Datasheet LM139 SpecificationsProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:Analog ComparatorsMounting Style:SMD/SMTPackage / Case:SOP-14Number of Channels:4 ChannelOutput Type:CMOS, DTL, ECL, MOS, TTLResponse Time:1.3 usComparator Type:DifferentialSupply Voltage - Min:2 VSupply Voltage - Max:32 VOperating Supply Current:2 mAOutput Current per Channel:4 mAVos - Input Offset Voltage:2 mVIb - Input Bias Current:100 nAMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 125 CSeries:LM139Packaging:ReelPackaging:Cut TapePackaging:MouseReelBrand:STMicroelectronicsMinimum Dual Supply Voltage:1 VOperating Supply Voltage:3 V, 5 V, 9 V, 12 V, 15 V, 18 V, 24 V, 28 VPd - Power Dissipation:830 mWProduct:Analog ComparatorsProduct Type:Analog ComparatorsShutdown:No ShutdownFactory Pack Quantity:2500Subcategory:Amplifier ICsUnit Weight:0.008501 oz LM139 ManufacturerSTMicroelectronics is a French-Italian multinational electronics and semiconductors manufacturer headquartered in Plan-les-Ouates near Geneva, Switzerland. The company resulted from the merger of two government-owned semiconductor companies in 1987: "Thomson Semiconducteurs" of France and "SGS Microelettronica" of Italy. It is commonly called "ST", and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in the Canton of Geneva, the holding company, STMicroelectronics N.V. is incorporated in the Netherlands. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

STM32F303CCT6 DescriptionSTM32F303CCT6 FeaturesSTM32F303CCT6 PinoutsSTM32F303CCT6 SubstitutesSTM32F303CCT6 Power Supply SchemeSTM32F303CCT6 CAD ModelsSTM32F303CCT6 DatasheetSTM32F303CCT6 ManufacturerSTM32F303CCT6 Package STM32F303CCT6 Description The STM32F303CCT6 is based on the high-performance Arm® Cortex®-M4 32-bit RISC core with FPU operating at a frequency of up to 72 MHz, and embedding a floating point unit (FPU), a memory protection unit (MPU) and an embedded trace macrocell (ETM). The family incorporates high-speed embedded memories (up to 256 Kbytes of Flash memory, up to 40 Kbytes of SRAM) and an extensive range of enhanced I/Os and peripherals connected to two APB buses. The STM32F303CCT6 offers up to four fast 12-bit ADCs (5 Msps), seven comparators, four operational amplifiers, up to two DAC channels, a low-power RTC, up to five general-purpose 16-bit timers, one general-purpose 32-bit timer, and two timers dedicated to motor control. Italso features standard and advanced communication interfaces: up to two I2Cs, up to three SPIs (two SPIs are with multiplexed full-duplex I2Ss), three USARTs, up to two UARTs, CAN and USB. To achieve audio class accuracy, the I2S peripherals can be clocked via an external PLL. The STM32F303CCT6 operates in the -40 to +85 °C and -40 to +105 °C temperature ranges from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving mode allows the design of low-power applications. The STM32F303CCT6 offers devices in four packages ranging from 48 pins to 100 pins.  STM32F303CCT6 Features Core: Arm® Cortex®-M4 32-bit CPU with FPU (72 MHz max), single-cycle multiplication and HW division, 90 DMIPS (from CCM), DSP instruction and MPU (memory protection unit)Operating conditions:– VDD, VDDA voltage range: 2.0 V to 3.6 VMemories– 128 to 256 Kbytes of Flash memory– Up to 40 Kbytes of SRAM, with HW parity check implemented on the first 16 Kbytes.– Routine booster: 8 Kbytes of SRAM on instruction and data bus, with HW parity check (CCM)CRC calculation unitReset and supply management– Power-on/power-down reset (POR/PDR)– Programmable voltage detector (PVD)– Low-power modes: Sleep, Stop and Standby– VBAT supply for RTC and backup registersClock management– 4 to 32 MHz crystal oscillator– 32 kHz oscillator for RTC with calibration– Internal 8 MHz RC with x 16 PLL option– Internal 40 kHz oscillatorUp to 87 fast I/Os– All mappable on external interrupt vectors– Several 5 V-tolerantInterconnect matrix12-channel DMA controllerFour ADCs 0.20 µS (up to 39 channels) with selectable resolution of 12/10/8/6 bits, 0 to 3.6 V conversion range, single ended/differential input, separate analog supply from 2 to 3.6 VTwo 12-bit DAC channels with analog supply from 2.4 to 3.6 VSeven fast rail-to-rail analog comparators withanalog supply from 2 to 3.6 VFour operational amplifiers that can be used inPGA mode, all terminals accessible withanalog supply from 2.4 to 3.6 VUp to 24 capacitive sensing channels supportingTouchkey, linear and rotary touch sensorsUp to 13 timers– One 32-bit timer and two 16-bit timers with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input– Two 16-bit 6-channel advanced-control timers, with up to 6 PWM channels, deadtime generation and emergency stop– One 16-bit timer with 2 IC/OCs, 1 OCN/PWM, deadtime generation and emergency stop– Two 16-bit timers with IC/OC/OCN/PWM, deadtime generation and emergency stop– Two watchdog timers (independent, window)– SysTick timer: 24-bit downcounter– Two 16-bit basic timers to drive the DACCalendar RTC with Alarm, periodic wakeupfrom Stop/StandbyCommunication interfaces– CAN interface (2.0B Active)– Two I2C Fast mode plus (1 Mbit/s) with 20 mA current sink, SMBus/PMBus, wakeup from STOP– Up to five USART/UARTs (ISO 7816 interface, LIN, IrDA, modem control)– Up to three SPIs, two with multiplexed half/full duplex I2S interface, 4 to 16 programmable bit frames– USB 2.0 full speed interface– Infrared transmitterSerial wire debug, Cortex®-M4 with FPU ETM,JTAG96-bit unique ID STM32F303CCT6 Pinouts STM32F303CCT6 SubstitutesPart No.ManufacturerMK10DX128VLF5Rochester Electronics, LLCMKV30F64VLF10NXP USA Inc.MK10DN64VLF5NXP USA Inc.MK20DN64VLF5Rochester Electronics, LLCMK10DN128VLF5 NXP USA Inc.MK10DN32VLF5Rochester Electronics, LLCATSAM4S4AB-ANRMicrochip TechnologyMK20DX128VLF5NXP USA Inc.MK20DN32VLF5NXP USA Inc.MK22DX256VLF5NXP USA Inc.MK20DX32VLF5Rochester Electronics, LLCMKO2FN128VLF10NXP USA Inc.ATSAM4S4AA-AUMicrochip TechnologyMK20DX64VLF5NXP USA Inc.MKV30F64VLF10R NXP USA Inc. STM32F303CCT6 Power Supply Scheme STM32F303CCT6 CAD Models STM32F303CCT6 DatasheetSTM32F303CCT6 PDF STM32F303CCT6 Manufacturer STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. STM32F303CCT6 PackageLQFP48 – 7 x 7 mm, low-profile quad flat package 

CatalogProduct OverviewHFBR-1414TZ Related Video IntroductionHFBR-1414TZ CAD ModelsHFBR-1414TZ FeaturesHFBR-1414TZ ApplicationsHFBR-1414TZ DimensionsHFBR-1414TZ DatasheetHFBR-1414TZ SpecificationsHFBR-1414TZ ManufacturerUsing WarningHFBR-1414TZ FAQ Product OverviewThe 820 nm Miniature Link Series of components is designed to provide cost-effective, high-performance fiber optic communication links for information systems and industrial applications with link distances of several kilometers. With the HFBR-24x6Z, the 125 MHz analog receiver, data rates of up to 160 MBaud can be attained. Transmitters and receivers are directly compatible with popular “industry-standard” connectors: ST, SMA, SC, and FC. They are completely specified with multiple fiber sizes; including 50/125 μm, 62.5/125 μm, 100/140 μm, and 200 μm. Products are available in various options. For example, transmitters with the improved protection option P show an increased ESD resistance to the pins. This HFBR-141xPxZ integrated solution is realized by including a Zener diode parallel to the LED. The HFBR-14x4Z high-power transmitter and HFBR-24x6Z 125 MHz receiver pair up to provide a duplex solution optimized for 100BASE-SX. 100BASE-SX is a Fast Ethernet Standard (100 Mb/s) at 850 nm on multimode fiber. Evaluation kits are available for ST products, including transmitter, receiver, eval board, and technical literature. HFBR-1414TZ Related Video Introduction HFBR-1414TZ Video Description: A network device that converts an incoming electrical signal into a modulated optical signal for transmission down an optical fiber link. EXFO's Be-an-Expert Program has produced the world's first animated glossary of fiber optic terms. Including concise definitions and animated sequences, this tool provides a great reference for anyone that wishes to understand fiber terminology. HFBR-1414TZ CAD ModelsFigure: HFBR-1414TZ PCB Symbol   Figure: HFBR-1414TZ Footprint   Figure: HFBR-1414TZ 3D Models HFBR-1414TZ FeaturesRoHS compliantLow-cost transmitters and receiversChoice of ST, SMA, SC, or FC ports820 nm wavelength technologySignal rates up to 160 MBaudLink distances up to several kilometersCompatible with 50/125 μm, 62.5/125 μm, 100/140 μm, and200 μm Plastic-Clad Silica (PCS) FiberRepeatable ST connections within 0.2 dB typicalUnique optical port design for efficient couplingPick and place, and wave solderableNo board-mounting hardware requiredWide operating temperature range –40°C to +85°CConductive port option HFBR-1414TZ Applications100BASE-SX Fast Ethernet on 850 nmMedia/fiber conversion, switches, routers, hubs, and NICs on100BASE-SXLocal area networksComputer-to-peripheral links and computer monitor linksDigital cross connect linksCentral office switch/PBX linksVideo linksModems and multiplexersSuitable for Tempest systemsIndustrial control links HFBR-1414TZ Dimensions HFBR-1414TZ DatasheetYou can download the datasheet from the link given below:HFBR-1414TZ Datasheet HFBR-1414TZ SpecificationsTypeDescriptionCategoryOptoelectronicsFiber Optics - Transmitters - DiscreteMfrBroadcom LimitedPackageBulkProduct StatusActiveWavelength820nmVoltage - Forward (Vf) (Typ)1.7VCurrent - DC Forward (If) (Max)100 mAVoltage - DC Reverse (Vr) (Max)1.8 VCapacitance55 pFConnector TypeSTBase Product NumberHFBR-1414 HFBR-1414TZ ManufacturerBroadcom is a diversified global semiconductor leader built on 50 years of innovation, collaboration and engineering excellence. Broadcom’s extensive product portfolio serves multiple applications within four primary end markets: wired infrastructure, wireless communications, enterprise storage and industrial & others. Applications for our products in these end markets include: data center networking, home connectivity, broadband access, telecommunications equipment, smartphones and base stations, data center servers and storage, factory automation, power generation and alternative energy systems, and displays. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. HFBR-1414TZ FAQWhat are fibre optics used for?Fiber optics is used for long-distance and high-performance data networking. It is also commonly used in telecommunication services, such as internet, television and telephones. What is a fiber optic transmitter made up of?Fiber optic transmitters consist of an interface circuit, a source drive circuit, and an optical source. The interface circuit receives electrical signals. What is the function of transmitter optical fibre and receiver?The fiber optic source used in the transmitter is LED otherwise laser source & electronics for signal conditioning is mainly used for adding a signal into fiber. The receiver in fiber optic captures the light signal from a FOC, and decodes the binary information and transmits it into an electrical signal. 

Product OverviewThis Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. CatalogProduct OverviewMTB30P06VT4G FeaturesMTB30P06VT4G PinoutMaximum RatingsOrdering InformationElectrical Characteristics Typical Electrical CharacteristicsPower Mosfet SwitchingSafe Operating AreaMTB30P06VT4G PackageMTB30P06VT4G DatasheetUsing WarningsMTB30P06VT4G FAQ MTB30P06VT4G FeaturesAvalanche Energy SpecifiedIDSS and VDS(on) Specified at Elevated TemperatureAEC−Q101 Qualified and PPAP Capable − MTBV30P06VThese Devices are Pb−Free and are RoHS Compliant MTB30P06VT4G PinoutThe following figure is the diagram of MTB30P06VT4G pinout. MTB30P06VT4G Pinout Maximum RatingsRatingSymbolValueUnitDrain−to−Source VoltageVDSS60VdcGate−to−Source Voltage− Continuous− Non−repetitive (tp £ 10 ms) VGS VGSM ± 15± 25 Vdc VpkDrain Current − Continuous @ 25°C− Continuous @ 100°C− Single Pulse (tp £ 10 µs)ID ID IDM3019105Adc ApkTotal Power Dissipation @ 25°C Derate above 25°CTotal Power Dissipation @ TA = 25°C (Note 1)PD1250.833.0WW/°COperating and Storage Temperature RangeTJ, Tstg− 55 to175°CSingle Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 1.0 mH, RG = 25 Ω)EAS450mJThermal Resistance− Junction−to−Case− Junction−to−Ambient− Junction−to−Ambient (Note 1) RθJC RθJA RθJA 1.262.550° C/WMaximum Lead Temperature for Soldering Purposes, 1/8² from Case for 10 secondsTL260°C Ordering InformationDevicePackageShippingMTB30P06VGD2PAK(Pb−Free)50 Units / RailMTB30P06VT4GD2PAK(Pb−Free)800 / Tape & ReelMTBV30P06VT4GD2PAK(Pb−Free)800 / Tape & Reel Electrical CharacteristicsCharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc)V(BR)DSS 60 − − Vdc 62−mV/°C Temperature Coefficient (Positive) − Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc)IDSS − − 10µAdc −−100  (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)  Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)IGSS−−100nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage(VDS = VGS, ID = 250 µAdc)Threshold Temperature Coefficient (Negative)VGS(th) 2.0 2.6 4.0 Vdc mV/°C 5.3− − Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 15 Adc)RDS(on)−0.0670.08Ω Drain−Source On−Voltage (VGS = 10 Vdc, ID = 30 Adc)(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)VDS(on) −− 2.0 2.9Vdc −2.8 Forward Transconductance (VDS = 8.3 Vdc, ID = 15 Adc)gFS 5.0 7.9 −Mhos DYNAMIC CHARACTERISTICSInput Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)Ciss−15622190pFOutput CapacitanceCoss−524730Transfer CapacitanceCrss−154310SWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time (VDD = 30 Vdc, ID = 30 Adc, VGS = 10 Vdc, RG = 9.1 Ω)td(on)−14.730nsRise Timetr−25.950Turn−Off Delay Timetd(off)−98200Fall Timetf−52.4100Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 30 Adc, VGS = 10 Vdc)QT−5480nCQ1−9.0−Q2−26−Q3−20−SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage(IS = 30 Adc, VGS = 0 Vdc)(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)VSD −− 2.31.9 3.0−VdcReverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc,dIS/dt = 100 A/µs)trr−175−nsta−107−tb−68−Reverse Recovery Stored ChargeQRR−0.965−µC Typical Electrical CharacteristicsFigure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage Power Mosfet SwitchingSwitching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so thatt = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following:tr = Q2 x RG/(VGG − VGSP)tf = Q2 x RG/VGSPwhereVGG = the gate drive voltage, which varies from zero to VGGRG = the gate drive resistanceand Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are:td(on) = RG Ciss In [VGG/(VGG − VGSP)]td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current Safe Operating AreaThe Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forwardbiased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with anincrease of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Figure 13. Thermal Response Figure 14. Diode Reverse Recovery Waveform Figure 15. D2PAK Power Derating Curve MTB30P06VT4G PackageThe following diagram shows the MTB30P06VT4G package. MTB30P06VT4G Package MTB30P06VT4G DatasheetYou can download MTB30P06VT4G datasheet from the link given below:MTB30P06VT4G Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. MTB30P06VT4G FAQWhat modes is the Power MOSFET designed to withstand high energy? Avalanche and commutation. What is the Power MOSFET particularly well suited for? Bridge circuits. What is a MOSFET used for?The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain. What is MOSFET and how it works?A metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. It is used for switching or amplifying signals. What is the difference between MOSFET and transistor?The Bipolar Junction Transistor (BJT) is a current-driven device (in contrast, MOSFET is voltage-driven) that is widely used as an amplifier, oscillator, or switch, amongst other things. A BJT has three pins – the base, collector, and emitter – and two junctions: a p-junction and n-junction. 

 CatalogDescriptionCAD ModelsPin ConfigurationFeaturesApplicationsDatasheetProduct AttributesRecommendation Layout GuideManufacturerUsing WarningDescriptionThe uPOL module is non-isolated dc-dc converter that can deliver up to 3A of output current. The PWM switching regulator, high frequency power inductor are integrated in one hybrid package. It only needs input/output capacitors and one voltage dividing resistor to perform properly. The module has automatic operation with PWM mode and power saving mode according to loading, through constant on-time control, the module offers a simpler control loop and faster transient response. Other features include remote enable function, internal soft-start, non-latching over current protection, power good, input under voltage locked-out capability. The low profile and compact size package (3.5mm×3.5mm×1.7mm) is suitable for automated assembly by standard surface mount equipment. The uPOL module is Pb-free and RoHS compliance. CAD Models Figure: MUN12AD03 PCB Symbol  Figure: MUN12AD03 Footprint Pin Configuration Figure: MUN12AD03 Pin Configuration FeaturesHigh Density uPOL Module3A Output Current91% Peak Efficiency at 12VINInput Voltage Range from 4.5V to 16VOutput Voltage Range from 0.6V to 5.0VEnable / PGOOD FunctionAutomatic Power Saving/PWM ModeProtections (OCP: Non-latching, OTP)Adjustable Soft Start FunctionCompact Size: 3.5mm*3.5mm*1.7mmPb-free for RoHS compliantMSL 2, 260℃ Reflow ApplicationsPoint of Load ConversionLDOs ReplacementSet Top Box / DSL Modem / AP RouterIndustrial Personal Computer Figure: MUN12AD03 Reference Circuit for General Application DatasheetMUN12AD03-Datasheet Product AttributesManufacturer Part Number:MUN12AD03Part Life Cycle Code:ActiveECCN Code:EAR99Manufacturer:Cyntec Co LtdAnalog IC - Other Type:DC-DC REGULATED POWER SUPPLY MODULEInput Voltage-Max:16 VInput Voltage-Min:4.5 VInput Voltage-Nom:12 VJESD-30 Code:S-XXMA-B11Length:3.5 mmLoad Regulation-Max:0.03Moisture Sensitivity Level:2Number of Functions:1Number of Outputs:1Number of Terminals:11Operating Temperature-Max:62℃Output Voltage-Max:5 VOutput Voltage-Min:0.6 VOutput Voltage-Nom:3.3 VPackage Shape:SQUAREPackage Style:MICROELECTRONIC ASSEMBLYPeak Reflow Temperature (Cel):260Seated Height-Max:1.9 mmSurface Mount:YESTechnology:HYBRIDTerminal Form:BUTerminal Pitch:0.8 mmTime@Peak Reflow Temperature-Max (s):30Total Power Output-Max:9.9 WTrim/Adjustable Output:YESWidth:3.5 mm Recommendation Layout GuideIn order to achieve stable, low losses, less noise or spike, and good thermal performance some layout considerations are necessary. The ground connection between pin 5, 10 and 11 should be a solid ground plane under the module.It can be connected one or more ground plane by using several Vias.Place high frequency ceramic capacitors between pin 4 and 9 (VOUT), and pin 5, 10 and 11 (GND) for output side, as close to module as possible to minimize high frequency noise.Keep the RFB_T and RFB_B connection trace to the module pin 2 (FB) short.Use large copper area for power path (VIN, VOUT, and GND) to minimize the conduction loss andenhance heat transferring. Also, use multiple Vias to connect power planes in different layer. ManufacturerSince 1991 Cyntec’s team of scientists and engineers have been known to lead the way in the research and development of the miniaturized and highly integrated products and solutions. The product lines consist of magnetic components, passive components, power modules, RF & optical modules which serve the client, cloud computing equipment, automotive, IOT, industry, and other market segments. Using their insight into market trends and the in depth knowledge of electronic materials and processes, they have been able to produce a wide variety of products with the highest levels of performance, high power handling, high density packaging, and tight accuracy. With their highly automated manufacturing operations, magnetic components production capacity is over 10 billion pieces per year. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit.