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IRF540N Power MOSFET Datasheet PDF Download [FAQ]

  • Contents

Catalog

Features

Description

Absolute Maximum Ratings

Thermal Resistance

Electrical Characteristics

Source-Drain Ratings and Characteristics

Package Outline

Part Marking Information

Datasheet PDF Download

IRF540N FAQ

 

Features

•Advanced Process Technology
•Ultra Low On-Resistance
•Dynamic dv/dt Rating
•175°C Operating Temperature
•Fast Switching
•Fully Avalanche Rated
•Lead-Free

 

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

Absolute Maximum Ratings

 

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

33

 

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

23

IDM

Pulsed Drain Current ➀

110

PD @TC = 25°C

Power Dissipation

130

W

 

Linear Derating Factor

0.87

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current➀

16

A

EAR

Repetitive Avalanche Energy➀

13

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

7.0

V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

 

°C

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

 

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

 

 

Thermal Resistance

 

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

1.15

 

°C/W

RqCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

RqJA

Junction-to-Ambient

–––

62

 

Electrical Characteristics

@ TJ = 25°C (unless otherwise specified)

 

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

–––

V

VGS = 0V, ID = 250µA

DV(BR)DSS/DTJ

Breakdown Voltage Temp. Coefficient

–––

0.12

–––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

–––

44

mW

VGS = 10V, ID = 16A     

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

21

–––

–––

S

VDS = 50V, ID = 16A 

IDSS

Drain-to-Source Leakage Current

–––

–––

25

µA

VDS = 100V, VGS = 0V

–––

–––

250

VDS = 80V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

VGS = -20V

Qg

Total Gate Charge

–––

–––

71

 

nC

ID = 16A VDS = 80V

VGS = 10V, See Fig. 6 and 13

Qgs

Gate-to-Source Charge

–––

–––

14

Qgd

Gate-to-Drain ("Miller") Charge

–––

–––

21

td(on)

Turn-On Delay Time

–––

11

–––

 

ns

VDD = 50V ID = 16A RG = 5.1W

VGS = 10V, See Fig. 10  

tr

Rise Time

–––

35

–––

td(off)

Turn-Off Delay Time

–––

39

–––

tf

Fall Time

–––

35

–––

LD

Internal Drain Inductance

–––

4.5

–––

 

nH

Between lead, D

6mm (0.25in.)

from package G

and center of die contact S

LS

Internal Source Inductance

–––

7.5

–––

Ciss

Input Capacitance

–––

1960

–––

 

 

pF

VGS = 0V VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Coss

Output Capacitance

–––

250

–––

Crss

Reverse Transfer Capacitance

–––

40

–––

EAS

Single Pulse Avalanche Energy

–––

700 

185®

mJ

IAS = 16A, L = 1.5mH

 

Source-Drain Ratings and Characteristics

 

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

–––

–––

33

 

A

MOSFET symbol D

showing the

integral reverse G

p-n junction diode. S

ISM

Pulsed Source Current

(Body Diode)➀

–––

–––

110

VSD

Diode Forward Voltage

–––

–––

1.2

V

TJ = 25°C, IS = 16A, VGS = 0V  

trr

Reverse Recovery Time

–––

115

170

ns

TJ = 25°C, IF = 16A

di/dt = 100A/µs  

Qrr

Reverse Recovery Charge

–––

505

760

nC

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 

Package Outline

IRF540N-Package-Outline

 

Part Marking Information

IRF540N-Part-Marking-Information

 

Datasheet PDF Download

You can download the datasheet from the link given below.

IRF540N-Datasheet

 

IRF540N FAQ

What is a power MOSFET used for?

A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.


What are the important power MOSFET characteristics?

Because power MOSFETs are primarily used as power switches, they are expected to have low conduction and switching losses. For power management applications, conduction losses, ruggedness and avalanche capability are important features.


How much power can a MOSFET handle?

Modern MOSFETs can have on resistances of less than 10 milliohms. A little math shows that this device can handle 10 amps with one watt converted into waste heat (power = current2 x resistance).

 

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