The Kynix Components

CatalogProduct Overview STM32F103RET6 CAD Models STM32F103RET6 Pin Configuration STM32F103RET6 Block DiagramSTM32F103RET6 Features STM32F103RET6 Datasheet Product Attributes STM32F103RET6 Manufacturer Using WarningSTM32F103RET6 FAQProduct OverviewThe STM32F103xC, STM32F103xD and STM32F103xE performance line family incorporates the high-performance Arm® Cortex®-M3 32-bit RISC core operating at a 72 MHz frequency, high-speed embedded memories (Flash memory up to 512 Kbytes and SRAM up to 64 Kbytes), and an extensive range of enhanced I/Os and peripherals connected to two APB buses. All devices offer three 12-bit ADCs, four general-purpose 16- bit timers plus two PWM timers, as well as standard and advanced communication interfaces: up to two I2Cs, three SPIs, two I2Ss, one SDIO, five USARTs, an USB and a CAN. The STM32F103xC/D/E high-density performance line family operates in the –40 to +105 °C temperature range, from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving mode allows the design of low-power applications. These features make the STM32F103xC/D/E high-density performance line microcontroller family suitable for a wide range of applications such as motor drives, application control, medical and handheld equipment, PC and gaming peripherals, GPS platforms, industrial applications, PLCs, inverters, printers, scanners, alarm systems video intercom, and HVAC. STM32F103RET6 CAD ModelsFigure: PCB Symbol Figure: Footprint Figure: 3D Models STM32F103RET6 Pin ConfigurationFigure: Pin Configuration STM32F103RET6 Block DiagramFigure: Block Diagram STM32F103RET6 FeaturesCore: Arm® 32-bit Cortex®-M3 CPU– 72 MHz maximum frequency, 1.25 DMIPS/MHz(Dhrystone 2.1) performance at 0 wait statememory access– Single-cycle multiplication and hardwaredivision1)Memories– 256 to 512 Kbytes of Flash memory– up to 64 Kbytes of SRAM– Flexible static memory controller with 4 ChipSelect. Supports Compact Flash, SRAM,PSRAM, NOR and NAND memories– LCD parallel interface, 8080/6800 modes2)Clock, reset and supply management– 2.0 to 3.6 V application supply and I/Os– POR, PDR, and programmable voltage detector(PVD)– 4-to-16 MHz crystal oscillator– Internal 8 MHz factory-trimmed RC– Internal 40 kHz RC with calibration– 32 kHz oscillator for RTC with calibration3)Low power– Sleep, Stop and Standby modes– VBAT supply for RTC and backup registers4)3 × 12-bit, 1 µs A/D converters (up to 21 channels)– Conversion range: 0 to 3.6 V– Triple-sample and hold capability– Temperature sensor5)2 × 12-bit D/A converters6)DMA: 12-channel DMA controller– Supported peripherals: timers, ADCs, DAC,SDIO, I2Ss, SPIs, I2Cs and USARTs7)Debug mode– Serial wire debug (SWD) & JTAG interfaces– Cortex®-M3 Embedded Trace Macrocell™8)Up to 112 fast I/O ports– 51/80/112 I/Os, all mappable on 16 external interrupt vectors and almost all 5 V-tolerant9)Up to 11 timers – Up to four 16-bit timers, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input – 2 × 16-bit motor control PWM timers with deadtime generation and emergency stop – 2 × watchdog timers (Independent and Window) – SysTick timer: a 24-bit downcounter – 2 × 16-bit basic timers to drive the DAC10)Up to 13 communication interfaces – Up to 2 × I2C interfaces (SMBus/PMBus) – Up to 5 USARTs (ISO 7816 interface, LIN, IrDA capability, modem control) – Up to 3 SPIs (18 Mbit/s), 2 with I2S interface multiplexed – CAN interface (2.0B Active) – USB 2.0 full speed interface – SDIO interface11)CRC calculation unit, 96-bit unique ID12)ECOPACK® packages STM32F103RET6 DatasheetYou can download the datasheet from the link given below:Datasheet Product AttributesManufacturer:STMicroelectronicsProduct Category:ARM Microcontrollers - MCUSeries:STM32F103REMounting Style:SMD/SMTPackage / Case:LQFP-64Core:ARM Cortex M3Program Memory Size:512 kBData Bus Width:32 bitADC Resolution:12 bitMaximum Clock Frequency:72 MHzNumber of I/Os:51 I/OData RAM Size:64 kBOperating Supply Voltage:2 V to 3.6 VMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 85 CBrand:STMicroelectronicsData RAM Type:SRAMHeight:1.4 mmInterface Type:CAN, I2C, SPI, USART, USBLength:10 mmMoisture Sensitive:YesNumber of ADC Channels:16 ChannelNumber of Timers/Counters:8 TimerProcessor Series:ARM Cortex MProduct Type:ARM Microcontrollers - MCUProgram Memory Type:FlashFactory Pack Quantity:960Supply Voltage - Max:3.6 VSupply Voltage - Min:2 VTradename:STM32Width:10 mmUnit Weight:0.134041 oz STM32F103RET6 ManufacturerSTMicroelectronics is a French-Italian multinational electronics and semiconductors manufacturer headquartered in Plan-les-Ouates near Geneva, Switzerland. The company resulted from the merger of two government-owned semiconductor companies in 1987: "Thomson Semiconducteurs" of France and "SGS Microelettronica" of Italy. It is commonly called "ST", and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in the Canton of Geneva, the holding company, STMicroelectronics N.V. is incorporated in the Netherlands. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. STM32F103RET6 FAQWhat are embedded microprocessors?Embedded microprocessors are computer chips used inside devices other than computers to provide added functionality, often in the areas of control and monitoring. Processors for PCs, workstations and servers get all the attention, but embedded microprocessors make the world go round. What is the difference between embedded system and microcontroller?Embedded systems are generally more basic and rudimentary than microcontrollers since they often do not have logic to run the system. Once the CPU tells the microcontroller to do something the microcontroller then directs the components of the embedded system to execute its specific tasks. Which microcontroller is mostly used?The MSP430 family of microcontrollers from TI are considered as some of the most modern microcontrollers and the most popular member of that family so far has been the MSP430G2452. The MSP430G2452 is a powerful, and relatively cheap microcontroller based on a 16-bit RISC CPU manufactured by Texas Instruments. 

 CatalogDescriptionCAD ModelsPin ConfigurationFunctional DiagramFeaturesApplicationsDatasheetProduct AttributesManufacturerUsing WarningDescriptionThe MAX17250 DC-DC boost converter is a high-efficiency, low quiescent current, synchronous boost (step-up) converter with True Shutdown™, programmable input current limit, and short-circuit protection. The MAX17250 has a wide input voltage range of 2.7V to 18V and generates an output voltage of 3V to 18V. The MAX17250 has a maximum on-time of 800ns and implements three modes of operation. The first mode of operation is a soft-start mode at power-up. The second mode of operation is normal operation and utilizes a fixed on-time/ minimum off-time Pulse Frequency Modulation (PFM) architecture that uses only 60μA (typ) quiescent current due to the converter switching only when needed. The last mode is True Shutdown, where the output is completely disconnected from the input, and the battery drain is minimized to 0.1μA (typ) shutdown current. The MAX17250 is available in a compact, 12-bump, 1.72mm x 1.49mm WLP or a 14-pin, 3mm x 3mm TDFN package. CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model Pin Configuration Figure: Pin Configuration Functional Diagram Figure: Functional Diagram FeaturesInput Voltage Range 2.7V to 18V         - 1 or 2 Cell Li-ion BatteriesOutput Voltage Range 3V to 18V, > VINIntegrated Power FETsSelectable Input Peak Current Limit (ISET)        - 3.5A, 2.7A, or 1.85A93% EfficiencyLow Power       - 0.1μA True Shutdown Current       - 60μA Quiescent CurrentProtection       - True Shutdown Prevents Current Flowing Between Input and Output       - Soft-Start Inrush Protection       - Short-Circuit Protection       - Overtemperature Protection       -    -40°C to +125°C Operation ApplicationsDigital CamerasBattery Powered Internet of Things (IoT) Device1 or 2 Cell Li-ion Battery ApplicationsDisplay SupplyBuzzer/Alarm Driver DatasheetYou can download the datasheet from the link given below:MAX17250-Datasheet Product AttributesManufacturer:Maxim IntegratedProduct Category:Switching Voltage RegulatorsMounting Style:SMD/SMTPackage / Case:TDFN-14Topology:BoostOutput Voltage:3 V to 18 VNumber of Outputs:1 OutputInput Voltage MAX:18 VInput Voltage MIN:2.7 VQuiescent Current:60 uASwitching Frequency:1 MHzMinimum Operating Temperature:- 40 ℃Maximum Operating Temperature:+ 125 ℃Series:MAX17250Packaging:Cut TapePackaging:MouseReelPackaging:ReelInput Voltage:2.7 V to 18 VType:DC/DC ConverterBrand:Maxim IntegratedShutdown:ShutdownProduct Type:Switching Voltage RegulatorsFactory Pack Quantity:2500Subcategory:PMIC - Power Management ICsSupply Voltage - Min:2.7 V ManufacturerMaxim Integrated, a subsidiary of Analog Devices, designs, manufactures, and sells analog and mixed-signal integrated circuits for the automotive, industrial, communications, consumer, and computing markets. Maxim's product portfolio includes power and battery management ICs, sensors, analog ICs, interface ICs, communications solutions, digital ICs, embedded security, and microcontrollers. The company is headquartered in San Jose, California, and has design centers, manufacturing facilities, and sales offices worldwide. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

CatalogFDD5614P OverviewFDD5614P FeaturesFDD5614P PinoutFDD5614P ApplicationsFDD5614P CAD ModelsFDD5614P SpecificationFDD5614P ManufacturerFDD5614P DatasheetUsing WarningsFDD5614P OverviewThis 60 V P−Channel MOSFET uses onsemi’ s high voltage POWERTRENCH process. It has been optimized for power management applications.This blog will introduce FDD5614P systematically from its features, pinout to its specifications, applications, also including FDD5614P datasheet and so much more.FDD5614P Features♦ −15 A, −60 V♦ RDS(ON) = 100 m at VGS = −10 V♦ RDS(ON) = 130 m at VGS = −4.5 VFast Switching SpeedHigh Performance Trench Technology for Extremely Low RDS(ON)High Power and Current Handling CapabilityThis is a Pb−Free DeviceFDD5614P PinoutThe following figure is the diagram of FDD5614P pinout.FDD5614P PinoutFDD5614P ApplicationsDC/DC ConverterPower ManagementLoad SwitchFDD5614P CAD ModelsThe following are FDD5614P Symbol, Footprint, and 3D Model.FDD5614P SymbolFDD5614P FootprintFDD5614P 3D ModelFDD5614P SpecificationProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:SMD/SMTPackage / Case:DPAK-3Transistor Polarity:P-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:60 VId - Continuous Drain Current:15 ARds On - Drain-Source Resistance:76 mOhmsVgs - Gate-Source Voltage:- 20 V, + 20 VVgs th - Gate-Source Threshold Voltage:3 VQg - Gate Charge:24 nCMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 175 CPd - Power Dissipation:42 WChannel Mode:EnhancementTradename:PowerTrenchPackaging:ReelPackaging:Cut TapePackaging:MouseReelBrand:onsemi / FairchildConfiguration:SingleFall Time:12 nsForward Transconductance - Min:8 SHeight:2.39 mmLength:6.73 mmProduct Type:MOSFETRise Time:10 nsSeries:FDD5614PFactory Pack Quantity:2500Subcategory:MOSFETsTransistor Type:1 P-ChannelType:MOSFETTypical Turn-Off Delay Time:19 nsTypical Turn-On Delay Time:7 nsWidth:6.22 mmPart # Aliases:FDD5614P_NLUnit Weight:0.011640 ozFDD5614P ManufacturerON Semiconductor is a Fortune 500 company driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power and signal management, logic, standard and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and military/aerospace applications.FDD5614P DatasheetYou can download FDD5614P datasheet from the link given below:FDD5614P DatasheetUsing WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts. 

 CatalogDescriptionCAD ModelsPin ConfigurationBlock DiagramFeatures and BenefitsDatasheetProduct AttributesManufacturerUsing WarningDescriptionThe PCA9555 is a 24-pin CMOS device that provides 16 bits of General Purpose parallel Input/Output (GPIO) expansion for I2C-bus/SMBus applications and was developed to enhance the NXP Semiconductors family of I2C-bus I/O expanders. The improvements include higher drive capability, 5 V I/O tolerance, lower supply current, individual I/O configuration, and smaller packaging. I/O expanders provide a simple solution when additional I/O is needed for ACPI power switches, sensors, push buttons, LEDs, fans, etc. The PCA9555 consists of two 8-bit Configuration (Input or Output selection); Input, Output and Polarity Inversion (active HIGH or active LOW operation) registers. The system master can enable the I/Os as either inputs or outputs by writing to the I/O configuration bits. The data for each Input or Output is kept in the corresponding Input or Output register. The polarity of the read register can be inverted with the Polarity Inversion register. All registers can be read by the system master. Although pin-to-pin and I2C-bus address compatible with the PCF8575, software changes are required due to the enhancements, and are discussed in Application Note AN469. The PCA9555 open-drain interrupt output is activated when any input state differs from its corresponding input port register state and is used to indicate to the system master that an input state has changed. The power-on reset sets the registers to their default values and initializes the device state machine. Three hardware pins (A0, A1, A2) vary the fixed I2C-bus address and allow up to eight devices to share the same I2C-bus/SMBus. The fixed I2C-bus address of the PCA9555 is the same as the PCA9554, allowing up to eight of these devices in any combination to share the same I2C-bus/SMBus. CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model Pin Configuration Figure: Pin Configuration  Block Diagram Figure:  Block Diagram  Features and BenefitsOperating power supply voltage range of 2.3 V to 5.5 V n5 V tolerant I/Os nPolarity Inversion register nActive LOW interrupt output nLow standby current nNoise filter on SCL/SDA inputs nNo glitch on power-up nInternal power-on reset n16 I/O pins which default to 16 inputs n0 Hz to 400 kHz clock frequency nESD protection exceeds 2000 V HBM per JESD22-A114, 200 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA nFive packages offered: SO24, SSOP24, TSSOP24, HVQFN24 and HWQFN24 DatasheetYou can download the datasheet from the link given below:PCA9555PW-Datasheet Product AttributesManufacturer:NXPProduct Category:Interface - I/O ExpandersNumber of I/Os:16 I/OInterface Type:I2C, Serial, SMBusMaximum Clock Frequency:400 kHzInterrupt Output:With InterruptOperating Supply Voltage:2.3 V to 5.5 VMinimum Operating Temperature:- 40 ℃Maximum Operating Temperature:+ 85 ℃Mounting Style:SMD/SMTPackage / Case:SOT-355Packaging:Cut TapePackaging:MouseReelPackaging:ReelInput Voltage:2.3 V to 5.5 VOutput Current:50 mAOutput Voltage:1.7 V to 4.1 VProduct:I/O ExpandersType:I/O ExpanderBrand:NXP SemiconductorsLogic Family:CMOSLogic Type:I2C, SMBusOperating Supply Current:135 uAPd - Power Dissipation:200 mWProduct Type:I/O ExpandersFactory Pack Quantity:2500Subcategory:Interface ICsPart # Aliases:9.3527E+11Unit Weight:0.007760 oz ManufacturerNXP Semiconductors N.V. is a Netherlands-domiciled American semiconductor manufacturer with headquarters in Eindhoven, Netherlands that focuses in the automotive industry. The company employs approximately 31,000 people in more than 35 countries, including 11,200 engineers in 33 countries. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current.CatalogProduct OverviewCAD ModelsPackage DimensionsSoldering FootprintFeatures and Benefits2N7002LT1G Product Attribute2N7002LT1G ApplicationsAlternate ProductsUsing WarningsParts ComparisonsProduct OverviewThe ON Semiconductor MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.CAD Models2N7002LT1G Symbol 2N7002LT1G Footprint 2N7002LT1G 3D ModelPackage DimensionsSoldering FootprintFeatures and Benefits• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable (2V7002L)• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant2N7002LT1G Product AttributeCase/Package:SOT-23-3Contact Plating:TinContinuous Drain Current (ID):115 mACurrent Rating:115 mADrain to Source Breakdown Voltage:60 VDrain to Source Resistance:7.5 ΩDrain to Source Voltage (Vdss):60 VElement Configuration:SingleGate to Source Voltage (Vgs):20 VInput Capacitance:50 pFMax Junction Temperature (Tj):150 °CMax Operating Temperature:150 °CMax Power Dissipation:225 mWMin Operating Temperature:-55 °CMSL LevelMSL 1 - UnlimitedNominal Vgs:2.5 VNumber of Channels:1Number of Elements:1Number of Pins:3Packaging:Cut TapePower Dissipation:225 mWRds On Max:7.5 ΩResistance:7.5 ΩSchedule B:8541210080Threshold Voltage:1 VTurn-Off Delay Time:40 nsTurn-On Delay Time:20 nsVoltage Rating (DC):60 VHeight:1.01 mmLength:3.04 mmWidth:1.4 mmHalogen Free:Halogen FreeLead Free:Lead FreeRadiation Hardening:NoREACH SVHC:No SVHCRoHS:CompliantLead Shape:Gull-wing2N7002LT1G Applications• Servo Motor Control• Power MOSFET Gate DriversAlternate Products2N7002L, 2N7002E-T1, 2N7002TRL13, 2N7002LT3, 2N7002L6327, 2N7002-T1, 2N7002H-7, 2N7002A-13, 2N7002A-7Using WarningsMarket demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Parts ComparisonsTable1. 2N7002LT1G vs 2N7002LParameters2N7002LT1G2N7002LSource Content uid2N7002LT1G*Pbfree Code Yes*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORMOTOROLA INCPart Package CodeSOT-23*Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count3*Manufacturer Package Code318-08*Reach Compliance CodecompliantunknownECCN CodeEAR99EAR99HTS Code8541.21.00.958541.21.00.95Factory Lead Time1 Week*Samacsys Description2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.115 A*Drain Current-Max (ID)0.115 A0.115 ADrain-source On Resistance-Max7.5 Ω7.5 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF5 pFJEDEC-95 CodeTO-236TO-236ABJESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e0Moisture Sensitivity Level1*Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIEDNOT SPECIFIEDPolarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W*Qualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin/Lead (Sn/Pb)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIEDNOT SPECIFIEDTransistor ApplicationSWITCHING*Transistor Element MaterialSILICONSILICONBase Number Matches13Rohs Code* NoPower Dissipation Ambient-Max*0.2 W Table 2. 2N7002LT1G vs 2N7002E-T1Parameters2N7002LT1G2N7002E-T1Source Content uid2N7002LT1G*Pbfree Code Yes*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORVISHAY SILICONIXPart Package CodeSOT-23SOT-23Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count33Manufacturer Package Code318-08*Reach Compliance CodecompliantcompliantECCN CodeEAR99EAR99HTS Code8541.21.00.95*Factory Lead Time1 Week*Samacsys Description2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.115 A*Drain Current-Max (ID)0.115 A0.24 ADrain-source On Resistance-Max7.5 Ω3 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF*JEDEC-95 CodeTO-236TO-236JESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e0Moisture Sensitivity Level1*Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C*Operating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIEDNOT SPECIFIEDPolarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W*Qualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)TIN LEADTerminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIEDNOT SPECIFIEDTransistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches13Rohs Code* No Table 3. 2N7002LT1G vs 2N7002TRL13Parameters2N7002LT1G2N7002TRL13Source Content uid2N7002LT1G*Pbfree Code Yes*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORPHILIPS COMPONENTSPart Package CodeSOT-23*Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count3*Manufacturer Package Code318-08*Reach Compliance CodecompliantunknownECCN CodeEAR99EAR99HTS Code8541.21.00.95*Factory Lead Time1 Week*Samacsys Description2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.115 A*Drain Current-Max (ID)0.115 A0.18 ADrain-source On Resistance-Max7.5 Ω5 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF*JEDEC-95 CodeTO-236*JESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3*Moisture Sensitivity Level1*Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C*Operating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIED*Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W*Qualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)*Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIED*Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches11 Table 4. 2N7002LT1G vs 2N7002LT3Parameters2N7002LT1G2N7002LT3Source Content uid2N7002LT1G2N7002LT3Pbfree Code Yes*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORON SEMICONDUCTORPart Package CodeSOT-23SOT-23Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count33Manufacturer Package Code318-08CASE 318-08Reach Compliance Codecompliantnot_compliantECCN CodeEAR99EAR99HTS Code8541.21.00.95*Factory Lead Time1 Week*Samacsys Description2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.115 A0.115 ADrain Current-Max (ID)0.115 A0.115 ADrain-source On Resistance-Max7.5 Ω7.5 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF5 pFJEDEC-95 CodeTO-236TO-236ABJESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e0Moisture Sensitivity Level11Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIED240Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W0.3 WQualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin/Lead (Sn80Pb20)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIED30Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches13Rohs Code* No Tablre 5. 2N7002LT1G vs 2N7002L6327Parameters2N7002LT1G2N7002L6327Pbfree Code Yes*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORINFINEON TECHNOLOGIES AGPart Package CodeSOT-23*Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count33Manufacturer Package Code318-08*Reach Compliance CodecompliantcompliantECCN CodeEAR99EAR99HTS Code8541.21.00.95*Factory Lead Time1 Week*Samacsys Description2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.115 A0.3 ADrain Current-Max (ID)0.115 A0.3 ADrain-source On Resistance-Max7.5 Ω3 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF3 pFJEDEC-95 CodeTO-236*JESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e3Moisture Sensitivity Level11Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIED260Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W0.5 WQualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)MATTE TINTerminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIED40Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches11Rohs Code* YesAdditional Feature*AVALANCHE RATED, LOGIC LEVEL COMPATIBLE Table 6. 2N7002LT1G vs 2N7002-T1Parameters2N7002LT1G2N7002-T1Pbfree Code Yes*Part Life Cycle CodeActiveObsoleteIhs ManufacturerON SEMICONDUCTORVISHAY SILICONIXPart Package CodeSOT-23SOT-23Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PINSMALL OUTLINE, R-PDSO-G3Pin Count33Manufacturer Package Code318-08*Reach Compliance CodecompliantcompliantECCN CodeEAR99EAR99HTS Code8541.21.00.95*Factory Lead Time1 Week*Samacsys Description2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23*Samacsys ManufacturerON Semiconductor*ConfigurationSINGLE WITH BUILT-IN DIODESINGLEDS Breakdown Voltage-Min60 V60 VDrain Current-Max (Abs) (ID)0.115 A*Drain Current-Max (ID)0.115 A0.115 ADrain-source On Resistance-Max7.5 Ω7.5 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss)5 pF5 pFJEDEC-95 CodeTO-236TO-236JESD-30 CodeR-PDSO-G3R-PDSO-G3JESD-609 Codee3e0Moisture Sensitivity Level1*Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C*Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIED240Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W*Qualification StatusNot QualifiedNot QualifiedSurface MountYESYESTerminal FinishTin (Sn)Tin/Lead (Sn/Pb)Terminal FormGULL WINGGULL WINGTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIED30Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICONBase Number Matches12Rohs Code* NoAdditional Feature*LOW THRESHOLD

CatalogGeneral DescriptionFeaturesMarking DiagramOrdering InformationAbsolute Maximum RatingsThermal CharacteristicsElectrical CharacteristicsTypical CharacteristicsPackage DimensionsBSS123 DatasheetBSS123 FAQGeneral DescriptionThese N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features17 A, 100 VRDS(on)= 6 Ω @ VGS = 10 VRDS(on)= 10 Ω @ VGS = 4.5 VHigh Density Cell Design for Extremely Low RDS(on)Rugged and ReliableCompact Industry Standard SOT−23 Surface MountPackageThis Device is Pb−Free and Halogen Free Marking DiagramSA = Specific Device Code M = Date Code*▪ = Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or position may vary depending upon manufacturing location. Ordering InformationDevicePackageShipping†BSS123,SOT−23−33000 /BSS123−G(Pb−Free)Tape & Reel†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D. Absolute Maximum Ratings TA = 25℃ unless otherwise noted.SymbolParameterRatingsUnitVDSSDrain−Source Voltage100VVGSSGate−Source Voltage±20IDDrain Current – Continuous (Note 1)0.17ADrain Current – Pulsed (Note 1)0.68PDMaximum Power Dissipation (Note 1)0.36WDerate Above 25°C2.8mW/°CTJ, TSTGOperating and Storage Junction Temperature Range-55 to +150°CTLMaximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s300Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Characteristics TA = 25℃ unless otherwise noted.SymbolParameterRatingsUnitRθJAThermal Resistance, Junction−to−Ambient (Note 1)350° C/W Electrical Characteristics TA = 25℃ unless otherwise noted.SymbolParameterTest ConditionsMinTypMaxUnitOFF CHARACTERISTICSBVDSSDrain–Source Breakdown VoltageVGS = 0 V, ID = 250 µA100−−VΔBVDSS ΔTJBreakdown Voltage Temperature CoefficientID = 250 mA, Referenced to 25°C−97−mV/°CIDSSZero Gate Voltage Drain CurrentVDS = 100 V, VGS = 0 V−−1µAVDS = 100 V, VGS = 0 V, TJ = 125°C−−60VDS = 20 V, VGS = 0 V−−10nAIGSSGate–Body LeakageVGS = ±20 V, VDS = 0 V−−±50nAON CHARACTERISTICS (Note 2)VGS(th)Gate Threshold VoltageVDS = VGS, ID = 1 mA0.81.72VΔVGS(th) ΔTJGate Threshold Voltage Temperature CoefficientID = 1 mA, Referenced to 25°C−–2.7−mV/°CRDS(on)Static Drain–Source On–ResistanceVGS = 10 V, ID = 0.17 A−1.26ΩVGS = 4.5 V, ID = 0.17 A−1.310VGS = 10 V, ID = 0.17 A, TJ = 125°C−2.212ID(on)On–State Drain CurrentVGS = 10 V, VDS = 5 V0.68−−AgFSForward TransconductanceVDS = 10 V, ID = 0.17 A0.080.8−SDYNAMIC CHARACTERISTICSCissInput CapacitanceVDS = 25 V, VGS = 0 V, f = 1.0 MHz−73−pFCossOutput Capacitance−7−CrssReverse Transfer Capacitance−3.4−RGGate ResistanceVGS = 15 mV, f = 1.0 MHz−2.2−ΩSWITCHING CHARACTERISTICS (Note 2)td(on)Turn–On Delay TimeVDD = 30 V, ID = 0.28 A, VGS = 10 V, RGEN = 6 Ω−1.73.4nstrTurn–On Rise Time−918td(off)Turn–Off Delay Time−1731tfTurn–Off Fall Time−2.45QgTotal Gate ChargeVDS = 30 V, ID = 0.22 A, VGS = 10 V−1.82.5nCQgsGate–Source Charge−0.2−QgdGate–Drain Charge−0.3−DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSISMaximum Continuous Drain–Source Diode Forward Current−−0.17AVSDDrain–Source Diode Forward VoltageVGS = 0 V, IS = 0.44 A (Note 2)−0.81.3VtrrDiode Reverse Recovery TimeIF = 0.17 A, dif/dt = 100 A/µs−11−nsQrrDiode Reverse Recovery Charge−3−nCProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.1.RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJA is guaranteed by design while RθJA is determined by the user’s board design.a)350℃/W when mounted on a minimum pad.2.Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics           Package Dimensions BSS123 DatasheetYou can download the datasheet of BSS123 from the link given below:BSS123 Datasheet BSS123 FAQWhat is N-channel Field Effect Transistor? The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs are devices with three terminals: source, gate, and drain. What is enhancement mode transistor?The Enhancement mode MOSFET is commonly used type of transistor. This type of MOSFET is equivalent to normally-open switch because it does not conduct when the gate voltage is zero. Where is FET used?FETs are used as voltage-variable resistors (WRs) in operational amplifiers (op-amps) and tone controls etc, for mixer operation on FM and TV receivers and in logic circuits. FETs are generally used in digital switching circuits though their operating speed is lower. What is N-channel JFET?A N-Channel JFET is a JFET whose channel is composed of primarily electrons as the charge carrier. This means that when the transistor is turned on, it is primarily the movement of electrons which constitutes the current flow. How is NMOS enhancement mode transistor represented?In nMOS inverter configuration, depletion mode devices are called as pull up and enhancement mode devices are called as pull down transistor. How is nMOS inverter represented? Solution: nMOS inverter can be represented using two transistors, depletion mode pMOS transistor followed by nMOS transistor.