The Kynix Components

Product OverviewThe TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. This blog will introduce TIP102 systematically from its features, pinout to its specifications, applications, also including TIP102 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionTIP102 FeaturesTIP102 PinoutTIP102 EquivalentsTIP102 ApplicationsTIP102 CAD ModelsTIP102 Schematic DiagramTIP102 Circuit DiagramTIP102 PackageTIP102 SpecificationTIP102 ManufacturerTIP102 DatasheetUsing WarningsTIP102 FAQ Related Video Introduction Video:Transistors - NPN & PNP - Basic Introduction TIP102 Video Description: This electronics video tutorial provides a basic introduction into NPN and PNP transistors which are known as BJTs or Bipolar Junction Transistors.  This video discusses the 3 operating regions of a transistor - the cutoff, active, and saturation region.  It also explains how the transistors act as switches and how to determine the current and voltages in a transistor base bias circuit. TIP102 FeaturesHigh DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdcCollector-Emitter Sustaining Voltage--@ 30 mAdcVCEO(sus) = 60 Vdc (Min)-TIP100, TIP105VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 AdcVCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 AdcMonolithic Construction with Built-In Base-Emitter Shunt ResistorsTO-220 AB Compact PackagePb-Free Packages are Available TIP102 PinoutThe following figure is the diagram of TIP102 pinout. TIP102 Pinout TIP102 EquivalentsYou can replace the TIP102 with the 2N6045, 2N6045G, BD543C, BD545C, BD649. TIP102 Applications■ linear and switching industrial equipment■ audio power amplifier■ general power switching■ DC-AC converter■ easy driver for low voltage DC motor TIP102 CAD ModelsThe followings are TIP102 Symbol, Footprint, and 3D Model. TIP102 Symbol TIP102 Footprint TIP102 3D Model TIP102 Schematic DiagramThe following is the internal schematic diagram of TIP102. TIP102 Internal Schematic Diagram TIP102 Circuit DiagramThe following is the circuit diagram of TIP102. Switching Times Test Circuit TIP102 PackageThe following diagram shows the TIP102 package. TIP102 Package TIP102 SpecificationAttributeValueTransistor TypeNPNMaximum Continuous Collector Current8 AMaximum Collector Emitter Voltage100 VMaximum Emitter Base Voltage5 VPackage TypeTO-220Mounting TypeThrough HolePin Count3Transistor ConfigurationSingleNumber of Elements per Chip1Minimum DC Current Gain200Maximum Collector Base Voltage100 VMaximum Collector Emitter Saturation Voltage2.5 VMaximum Collector Cut-off Current0.05mAMinimum Operating Temperature-65 CHeight9.15mmWidth4.6mmDimensions10.4 x 4.6 x 9.15mmMaximum Operating Temperature+150 CLength10.4mm TIP102 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. TIP102 DatasheetYou can download TIP102 datasheet from the link given below:TIP102 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. TIP102 FAQWhat is a TIP102?The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. What are Darlington transistors used for?Darlington transistors are mainly used in switching and amplification applications for delivering a very high DC current gain. Some of the key applications are high and low side switches, sensor amplifiers and audio amplifiers. How does an NPN transistor work?The NPN transistor is designed to pass electrons from the emitter to the collector (so conventional current flows from collector to emitter). The emitter "emits" electrons into the base, which controls the number of electrons the emitter emits. The transistor is kind of like an electron valve. What does NPN transistor stand for?NPN stands for Negative, Positive, Negative. Also known as sinking. ... In a NPN transistor, current flows from the emitter to the collector. The transmitter is powered on when sufficient current is supplied to the base of the transistor. The higher the current the more an NPN transistor will be powered on. What is the difference between PNP and NPN transistor?An NPN transistor has a piece of P-type silicon (the base) sandwiched between two pieces of N-type (the collector and emitter). In a PNP transistor, the type of the layers are reversed. NPN and PNP transistors have very similar schematic symbols. The only difference is the direction of the arrow on the emitter.

CatalogProduct OverviewIRL540 Related Video IntroductionIRL540 CAD ModelsIRL540 Test CircuitsIRL540 Package DimensionsIRL540 FeaturesIRL540 DatasheetIRL540 SpecificationsIRL540 ManufacturerUsing WarningIRL540 FAQ Product OverviewThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. IRL540 Related Video IntroductionIRL540 Video Description: A demonstration on how to connect a large MOSFET to an Arduino for control of a large motor. Also demonstrated. The MOSFET used in the video is a RFP50N06. IRL540 CAD ModelsFigure: IRL540 PCB Symbol  Figure: IRL540 Footprint  Figure: IRL540 3D Models IRL540 Test CircuitsFigure: IRL540 Switching Time Test Circuit   Figure: IRL540 Unclamped Inductive Test Circuit   Figure: IRL540 Gate Charge Test Circuit   Figure: IRL540 Peak Diode Recovery dV/dt Test Circuit IRL540 Package DimensionsFigure: IRL540 Package Dimensions IRL540 FeaturesDynamic dV/dt RatingRepetitive Avalanche RatedLogic-Level Gate DriveRDS(on) Specified at VGS = 4 V and 5 V175 °C Operating TemperatureFast SwitchingEase of ParallelingCompliant to RoHS Directive 2002/95/EC IRL540 DatasheetYou can download the datasheet from the link given below:IRL540 Datasheet IRL540 SpecificationsType DescriptionCategoryDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SinglePart StatusObsoleteFET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C28A (Tc)Drive Voltage (Max Rds On, Min Rds On)4V, 5VRds On (Max) @ Id, Vgs77mOhm @ 17A, 5VVgs(th) (Max) @ Id2V @ 250µAGate Charge (Qg) (Max) @ Vgs64 nC @ 5 VVgs (Max)±10VInput Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 VPower Dissipation (Max)150W (Tc)Operating Temperature-55°C ~ 175°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-220ABPackage / CaseTO-220-3 IRL540 ManufacturerVishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors. Vishay Intertechnology revenues for 2018 were $3.035 billion. As of December 31, 2018, Vishay Intertechnology had approximately 24,100 full-time employees. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. IRL540 FAQWhat is IRL540?IRL540 MOSFET belongs to the Third Generation Power MOSFETs provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. What is a power Mosfet used for?Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. How does power Mosfet work?Working Principle of MOSFET. The main principle of the MOSFET device is to be able to control the voltage and current flow between the source and drain terminals.  When we apply a repulsive force for the positive gate voltage, then the holes present beneath the oxide layer are pushed downward with the substrate. 

Product OverviewThe HTS221 is an ultra-compact sensor for relative humidity and temperature. It includes a sensing element and a mixed signal ASIC to provide the measurement information through digital serial interfaces. This blog will introduce HTS221 systematically from its features, pinout to its specifications, applications, also including HTS221 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionHTS221 FeaturesHTS221 PinoutHTS221 ApplicationsHTS221 CAD ModelsHTS221 Block DiagramHTS221 Circuit DiagramHTS221 PackageHTS221 SpecificationHTS221 ManufacturerHTS221 DatasheetUsing WarningsHTS221 FAQ Related Video Introduction Video: Arduino Nano - HTS221 Relative Humidity and Temperature Sensor Tutorial HTS221 Video Description: HTS221 Capacitive Digital Sensor for Relative Humidity and Temperature I²C Mini Module. It includes a sensing element and a mixed signal ASIC to provide the measurement information through digital serial interfaces. HTS221 Features0% to 100% relative humidity rangeSupply voltage: 1.7V to 3.6VLow power consumption: 2μA @ 1Hz ODRSelectable ODR from 1Hz to 12.5HzHigh rH sensitivity: 0.004% rH/LSBHumidity accuracy: ± 5% rH, 20% to +80% rHTemperature accuracy: ±5°C, 15°C to +40°CEmbedded 16-bit ADC16-bit humidity and temperature output dataSPI and I2C interfacesFactory calibratedTiny 2mm x 2mm x 0.9mm packageECOPACK® compliant HTS221 PinoutThe following figure is the diagram of HTS221 pinout. HTS221 Pinout HTS221 ApplicationsAir conditioning, heating and ventilationAir humidifiersRefrigeratorsWearable devicesSmart home automationIndustrial automationRespiratory equipmentAsset and goods tracking HTS221 CAD ModelsThe followings are HTS221 Symbol, Footprint, and 3D Model. HTS221 Symbol HTS221 Footprint HTS221 3D Model HTS221 Block DiagramThe following figure shows the block diagram of HTS221. HTS221 Block Diagram HTS221 Circuit DiagramThe following is the circuit diagram of HTS221. HTS221 electrical connections HTS221 PackageThe following diagram shows the HTS221 package. HTS221 Package HTS221 SpecificationManufacturer:STMicroelectronicsOperating Temperature-Max:120 °COperating Temperature-Min:-40 °CSeated Height-Max:0.9 mmSupply Voltage-Max (Vsup):3.6 VSupply Voltage-Min (Vsup):1.7 VSupply Voltage-Nom (Vsup):2.5 VWidth:2 mmSensor Type:Humidity, TemperatureAccuracy:±4.5% RH HTS221 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. HTS221 DatasheetYou can download HTS221 datasheet from the link given below:HTS221 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. HTS221 FAQHow does a humidity and temperature sensor work?Humidity sensors work by detecting changes that alter electrical currents or temperature in the air. Two thermal sensors conduct electricity based upon the humidity of the surrounding air. One sensor is encased in dry nitrogen while the other measures ambient air. The difference between the two measures the humidity. Where should the temperature and humidity sensor be placed?The mounting location should be in a sheltered area that is protected from rain. Ideally, the transmitter should be located on the north-side of the building (under an eave) to prevent sun-heated air from rising up the building's wall and affecting the relative humidity of the sensor. How accurate is DHT22?The DHT22 is the more expensive version which obviously has better specifications. Its temperature measuring range is from -40°C to +125°C with +-0.5 degrees accuracy, while the DHT11 temperature range is from 0°C to 50°C with +-2 degrees accuracy.

CatalogProduct OverviewIRF9530 Related Video IntroductionIRF9530 SymbolIRF9530 Test CircuitsIRF9530 FeaturesIRF9530 DatasheetIRF9530 SpecificationsIRF9530 ManufacturerUsing WarningIRF9530 FAQ Product OverviewThese are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. IRF9530 Related Video IntroductionIRF9530 Video Description: This is a video for testing or checking a N and P-channel MOSFET using a DMM and a power supply.  It teaches a quick way to check a MOSFET if it defective.It show the way to check the body diode of a MOSFET and to check if the MOSFET is ON or OFF by applying a gate voltage.  This can also be done using only a DMM but I discovered not all DMMs are the same.  If the voltage injected by the DMM is low, it is not enough to turn the MOSFET ON so you will think it is open.  Applying a 10 volt gate voltage is also closest to the real application of the MOSFET. IRF9530 SymbolFigure: IRF9530 Symbol IRF9530 Test CircuitsFigure: IRF9530 Unclamped Energy Test Circuit  Figure: IRF9530 Switching Time Test Circuit   Figure: IRF9530 Gate Charge Test Circuit IRF9530 Features-10A and -12A, -80V and -100VrDs(ON)= 0.30 and 0.40Single Pulse Avalanche Energy RatedSOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceRelated Literature- TB334,“Guidelines for Soldering Surface Mount Components to PC Boards" IRF9530 DatasheetYou can download the datasheet from the link given below:IRF9530 Datasheet IRF9530 SpecificationsTypeDescriptionCategoryDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SinglePart StatusActiveFET TypeP-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C12A (Tc)Rds On (Max) @ Id, Vgs300mOhm @ 6.5A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs45 nC @ 10 VVgs (Max)±20VInput Capacitance (Ciss) (Max) @ Vds500 pF @ 25 VPower Dissipation (Max)75W (Tc)Operating Temperature-55°C ~ 150°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-220ABPackage / CaseTO-220-3 IRF9530 ManufacturerHarris is an international communications and information technology company serving government and commercial markets in more than 150 countries. Headquartered in Melbourne, Florida, the company has annual revenue of $5.4 billion and 16,500 employees including nearly 7,000 engineers and scientists. Harris is dedicated to developing best-in-class assured communications; products, systems, and services. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. IRF9530 FAQWhat is IRF9530?IRF9530 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. What is P-channel power Mosfet?A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. A depletion-type MOSFET is normally on (maximum current flows from source to drain) when no difference in voltage exists between the gate and source terminals. What is P-channel MOSFET used for?P-channel MOSFETs are often used for load switching. The simplicity of P-channel solutions on the high side makes them equally attractive for applications such as Low-Voltage Drives and non-isolated Point of Loads in systems where space is at a premium. Which MOSFET is faster N channel or P-channel?The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. The N-channel transistor has lower on-resistance and gate capacitance for the same die area. 

CatalogProduct OverviewIRLB8721PBF Related Video IntroductionIRLB8721PBF CAD ModelsIRLB8721PBF Test CircuitsIRLB8721PBF Packaging DimensionsIRLB8721PBF BenefitsIRLB8721PBF ApplicationsIRLB8721PBF DatasheetIRLB8721PBF SpecificationsIRLB8721PBF ManufacturerUsing WarningIRLB8721PBF FAQ Product OverviewInfineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1V to 3V OUT DC-DC synchronous buck converter applications. IRLB8721PBF Related Video IntroductionIRLB8721PBF Video Description: The Power MOSFET Data Sheet contains characteristics, ratings and performance detail that is critical to the selection and use of the MOSFET in an application. While each application is unique the MOSFET data sheet can provide useful information for initial power loss calculations and it provides a snapshot of device performance capabilities. This video will provide an overview an overview of the Power MOSFET data sheet and clarification of specific data sheet parameters and definitions. IRLB8721PBF CAD ModelsFigure: IRLB8721PBF PCB Symbol   Figure: IRLB8721PBF Footprint   Figure: IRLB8721PBF 3D Models IRLB8721PBF Test CircuitsFigure: IRLB8721PBF Unclamped Inductive Test Circuit  Figure: IRLB8721PBF Switching Time Test Circuit   Figure: IRLB8721PBF Gate Charge Test Circuit IRLB8721PBF Packaging DimensionsFigure: IRLB8721PBF Packaging Dimensions IRLB8721PBF BenefitsVery Low RDS(on) at 4.5V VGSUltra-Low Gate ImpedanceFully Characterized Avalanche Voltageand CurrentLead-Free IRLB8721PBF ApplicationsOptimized for UPS/Inverter ApplicationsHigh Frequency Synchronous BuckConverters for Computer Processor PowerHigh Frequency Isolated DC-DCConverters with Synchronous Rectification for Telecom and Industrial Use IRLB8721PBF DatasheetYou can download the datasheet from the link given below:IRLB8721PBF Datasheet IRLB8721PBF SpecificationsProduct AttributeAttribute ValueManufacturer:InfineonProduct Category:MOSFETTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:30 VId - Continuous Drain Current:62 ARds On - Drain-Source Resistance:8.7 mOhmsVgs - Gate-Source Voltage:- 20 V, + 20 VVgs th - Gate-Source Threshold Voltage:1.8 VQg - Gate Charge:7.6 nCOperating Temperature:-55°C ~ 175°C (TJ)Pd - Power Dissipation:65 WChannel Mode:EnhancementTradename:HEXFETPackaging:TubeBrand:Infineon / IRConfiguration:SingleFall Time:17 nsForward Transconductance - Min:35 SHeight:15.65 mmLength:10 mmProduct Type:MOSFETRise Time:93 nsSeries:N-ChannelSubcategory:MOSFETsTransistor Type:1 N-ChannelTypical Turn-Off Delay Time:9 nsTypical Turn-On Delay Time:9.1 nsWidth:4.4 mmPart # Aliases:IRLB8721PBF SP001558140Unit Weight:0.068784 oz IRLB8721PBF ManufacturerInfineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. IRLB8721PBF FAQWhat is IRLB8721PBF?The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. What is a power Mosfet used for?Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. What is the difference between MOSFET and power mosfet?Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET. 

CatalogDescriptionRelated Video InstructionCAD ModelsPin ConfigurationTypical ApplicationFeaturesApplicationsDatasheetSpecificationsManufacturerUsing WarningFAQDescriptionThe LT1011 is a general purpose comparator with significantly better input characteristics than the LM111. Although pin compatible with the LM111, it offers four times lower bias current, six times lower offset voltage and five times higher voltage gain. Offset voltage drift, a previously unspecified parameter, is guaranteed at 15µV/℃. Additionally, the supply current is lower by a factor of two with no loss in speed. The LT1011 is several times faster than the LM111 when subjected to large overdrive conditions. It is also fully specified for DC parameters and response time when operating on a single 5V supply. The LT1011 retains all the versatile features of the LM111, including single 3V to ±18V supply operation, and a floating transistor output with 50mA source/sink capability. It can drive loads referenced to ground, negative supply or positive supply, and is specified up to 50V between V– and the collector output. A differential input voltage up to the full supply voltage is allowed, even with ±18V supplies, enabling the inputs to be clamped to the supplies with simple diode clamps. Related Video InstructionVideo: What is a Comparator | Electronic Devices and circuits | EDC | Electrical EngineeringLT1011AIS8#TRPBF Video Description: Learn What is a comparator in electrical engineering. you can also learn basic engineering concepts and electronic devices & circuits. By watching this video you will know about comparator in electronics and electrical engineering & electronics and communication engineering, GATE, GMAT, GRE. CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model Pin Configuration Figure: Pin Configuration Typical Application Figure: Typical Application FeaturesPin Compatible with LM111 Series DevicesGuaranteed Max 0.5mV Input Offset VoltageGuaranteed Max 25nA Input Bias CurrentGuaranteed Max 3nA Input Offset CurrentGuaranteed Max 250ns Response TimeGuaranteed Min 200,000 Voltage Gain50mA Output Current Source or Sink±30V Differential Input VoltageFully Specified for Single 5V OperationAvailable in 8-Lead PDIP and SO Packages ApplicationsSAR A/D ConvertersVoltage-to-Frequency ConvertersPrecision RC OscillatorPeak DetectorMotor Speed ControlPulse GeneratorRelay/Lamp Driver DatasheetYou can download the datasheet from the link given below:LT1011AIS8#TRPBF-Datasheet SpecificationsManufacturer:Analog Devices Inc.Product Category:Analog ComparatorsMounting Style:SMD/SMTPackage / Case:SOIC-8Number of Channels:1 ChannelOutput Type:CMOS, TTLSupply Voltage - Min:3 VSupply Voltage - Max:36 VOperating Supply Current:4 mAVos - Input Offset Voltage:0.3 mVSeries:LT1011Packaging:ReelPackaging:Cut TapePackaging:MouseReelBrand:Analog DevicesHeight:1.75 mmProduct:Analog ComparatorsProduct Type:Analog ComparatorsPropagation Delay Time:0.15 usFactory Pack Quantity:2500Subcategory:Amplifier ICsUnit Weight:0.002610 oz ManufacturerAnalog Devices, Inc. (ADI), also known simply as Analog, is an American multinational semiconductor company specializing in data conversion, signal processing and power management technology, headquartered in Wilmington, Massachusetts. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQHow does a voltage comparator work?A comparator circuit compares two voltages and outputs either a 1 (the voltage at the plus side; VDD in the illustration) or a 0 (the voltage at the negative side) to indicate which is larger. The circuit amplifies the voltage difference between Vin and VREF, and outputs the result at Vout. What is the function of a comparator?According the Merriam-Webster dictionary, a comparator is any device that's primary function is to compare an object against the standard measurement. This is an essential function for manufacturers who must regularly meet product specifications during development. How does comparator get high rate of accuracy?High voltage gain causes comparator output voltage to switch between saturation levels. High CMRR rejects noise at input terminal and input offset (voltage & current) help to keep changes in temperature variation very slight.