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IRLB8721PBF Power MOSFET: CAD Models, Datasheet, Benefits [Video&FAQ]

  • Contents

Catalog

Product Overview

IRLB8721PBF Related Video Introduction

IRLB8721PBF CAD Models

IRLB8721PBF Test Circuits

IRLB8721PBF Packaging Dimensions

IRLB8721PBF Benefits

IRLB8721PBF Applications

IRLB8721PBF Datasheet

IRLB8721PBF Specifications

IRLB8721PBF Manufacturer

Using Warning

IRLB8721PBF FAQ

 

Product Overview

Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1V to 3V OUT DC-DC synchronous buck converter applications.

 

IRLB8721PBF Video Description: The Power MOSFET Data Sheet contains characteristics, ratings and performance detail that is critical to the selection and use of the MOSFET in an application. While each application is unique the MOSFET data sheet can provide useful information for initial power loss calculations and it provides a snapshot of device performance capabilities. This video will provide an overview an overview of the Power MOSFET data sheet and clarification of specific data sheet parameters and definitions.

 

IRLB8721PBF CAD Models

IRLB8721PBF PCB Symbol

Figure: IRLB8721PBF PCB Symbol

 

 

 IRLB8721PBF Footprint

Figure: IRLB8721PBF Footprint

 

 

 IRLB8721PBF 3D Models

Figure: IRLB8721PBF 3D Models

 

IRLB8721PBF Test Circuits

IRLB8721PBF Unclamped Inductive Test Circuit

Figure: IRLB8721PBF Unclamped Inductive Test Circuit

 

 

IRLB8721PBF Switching Time Test Circuit

Figure: IRLB8721PBF Switching Time Test Circuit

 

 

 IRLB8721PBF Gate Charge Test Circuit

Figure: IRLB8721PBF Gate Charge Test Circuit

 

IRLB8721PBF Packaging Dimensions

IRLB8721PBF Packaging Dimensions

Figure: IRLB8721PBF Packaging Dimensions

 

IRLB8721PBF Benefits

  • Very Low RDS(on) at 4.5V VGS
  • Ultra-Low Gate Impedance
  • Fully Characterized Avalanche Voltageand Current
  • Lead-Free

 

IRLB8721PBF Applications

  • Optimized for UPS/Inverter Applications
  • High Frequency Synchronous BuckConverters for Computer Processor Power
  • High Frequency Isolated DC-DCConverters with Synchronous Rectification for Telecom and Industrial Use

 

IRLB8721PBF Datasheet

You can download the datasheet from the link given below:

IRLB8721PBF Datasheet

 

IRLB8721PBF Specifications

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 62 A
Rds On - Drain-Source Resistance: 8.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 7.6 nC
Operating Temperature: -55°C ~ 175°C (TJ)
Pd - Power Dissipation: 65 W
Channel Mode: Enhancement
Tradename: HEXFET
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Fall Time: 17 ns
Forward Transconductance - Min: 35 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 93 ns
Series: N-Channel
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 9 ns
Typical Turn-On Delay Time: 9.1 ns
Width: 4.4 mm
Part # Aliases: IRLB8721PBF SP001558140
Unit Weight: 0.068784 oz

 

IRLB8721PBF Manufacturer

Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

IRLB8721PBF FAQ

What is IRLB8721PBF?

The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.

 

What is a power Mosfet used for?

Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications.

 

What is the difference between MOSFET and power mosfet?

Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.

 

IRLB8721PBF Documents & Media

Download datasheets and manufacturer documentation for Infineon Technologies IRLB8721PBF.

IRLB8721PBF PCB Symbol, Footprint & 3D Model

Infineon Technologies IRLB8721PBF

Infineon Technologies

MOSFET N-CH 30V 62A TO-220AB

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