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IRF530N MOSFET: Datasheet, Pinout, Applications [FAQ]

  • Contents

Product Overview

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

This blog will introduce IRF530N systematically from its features, pinout to its specifications, applications, also including IRF530N datasheet and so much more.

 

Catalog

Product Overview

IRF530N Features

IRF530N Pinout

IRF530N Applications

IRF530N Circuit Diagram

IRF530N Package

IRF530N Specification

IRF530N Manufacturer

IRF530N Datasheet

Using Warnings

IRF530N FAQ

 

IRF530N Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating
  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability

 

IRF530N Pinout

The following figure is the diagram of IRF530N pinout.

VDSS = 100V

RDS(on) = 0.11Ω

ID = 17A

 

IRF530N Pinout

IRF530N Pinout

 

IRF530N Applications

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

 

IRF530N Circuit Diagram

The followings are the circuit diagrams of IRF530N.

 

Switching Time Test Circuit

Switching Time Test Circuit

 

Switching Time Waveforms

Switching Time Waveforms

 

Unclamped Inductive Test Circuit

Unclamped Inductive Test Circuit

 

Gate Charge Test Circuit

Gate Charge Test Circuit

 

IRF530N Package

The following diagram shows the IRF530N package.

 

IRF530N Package

IRF530N Package

 

IRF530N Specification

Product Attribute Attribute Value
Manufacturer: Infineon Technologies
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 110 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 79 W
Channel Mode: Enhancement
Brand: NXP Semiconductors
Configuration: Single
Fall Time: 12 ns
Height: 9.4 mm
Length: 10.3 mm
Product Type: MOSFET
Rise Time: 36 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 6 ns
Width: 4.5 mm

 

IRF530N Manufacturer

ON Semiconductor is a Fortune 500 company driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power and signal management, logic, standard and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and military/aerospace applications.

 

IRF530N Datasheet

You can download IRF530N datasheet from the link given below:

IRF530N Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

IRF530N FAQ

What is a N-channel MOSFET?

Channel MOSFET is a type of metal oxide semiconductor field-effect transistorthat is categorized under the field-effect transistors (FET).

 

How does N-channel mosfet activate?

Channel – For an N-Channel MOSFET, the source is connected to ground. To turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we need to connect the gate to ground. P-Channel – The source is connected to the power rail (Vcc).

 

What is N channel mosfet used for?

Then the P-channel MOSFET is used to switch the positive supply to the motor for forward direction (high-side switching) while the N-channel MOSFET is used to switch the negative supply to the motor for reverse direction (low-side switching).

 

Why N channel mosfet is widely used?

The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. The N-channel transistor has lower on-resistance and gate capacitance for the same die area.

 

How do you drive an N channel Mosfet?

Use a N-Channel MOSFET with Source connected to 0V (either directly or via a current limiting resistor) and the load connected to Drain. Whenever the Gate voltage exceeds the Source voltage by at least the Gate Threshold Voltage the MOSFET conducts. The higher the voltage, the more the Mosfet can conduct.

 

IRF530N Documents & Media

Download datasheets and manufacturer documentation for Infineon IRF530N.
Datasheets
datasheet

IRF530N PCB Symbol, Footprint & 3D Model

Infineon IRF530N

Infineon

N-channel MOSFET,IRF530N 15A 100V

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