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The devices or components commonly used in electronic circuits include: resistors, capacitors, inductors, sensors, potentiometers, transformers, diodes, bipolar junction transistors (BJTs), photoelectric switches, resonators, oscillators, filters, silicon controlled rectifiers (SCRs), relays, dual inline package (DIP) switches, fuse holders, bridge rectifiers, emitters, reed switches, common mode chokes and ferrite beads, magnetic rings, etc. This article contains a lot of commonly used electronic components figures, and I hope you will find this information useful.A Simple Guide to Electronic Components FAQ1. What are basic electronic components?You will work with a number of basic electronic components when building electronic circuits, including resistors, capacitors, diodes, transistors, and integrated circuits. 2. What are electronic components called?They are also called Electrical elements or electrical components. e.g. Resistors, Capacitors, Diodes, Inductors. 3. What are the 3 classification of electronic components?Classification of Electronic Components: Components can be classified as passive, active, or electro-mechanic components.Active components are devices that can amplify an electric signal and produce power.Passive components can't introduce net energy into the circuit. 4. What are the two types of electronic components?These are of 2 types: Passive and Active Components. 5. What is passive electronic components?A passive element is an electrical component that does not generate power, but instead dissipates, stores, and/or releases it. Passive elements include resistances, capacitors, and coils (also called inductors). These components are labeled in circuit diagrams as Rs, Cs and Ls, respectively. 6. How do I choose electronic components?How to select electronic components?Manufacturers.Application Circuit Complexity.Electrical Parameters [voltage, current, power, accuracy, response time, speed, resolution, etc.]Mechanical Parameters [dimension, package, weight, etc.]Consideration w.r.t Manufacturing / Testing. 7. What is difference between active and passive components?Active components are the elements or devices which are capable of providing or delivering energy to the circuit. Passive components are the ones that do not require any external source for the operation and are capable of storing energy in the form of voltage or current in the circuit. 8. How to Test Electric Components with a Multimeter?Continuity tests measure if electricity can flow through the part.Resistance tests how much current is lost as electricity flows through a component or circuit.The third common test is for voltage, or the force of the electric pressure. 9. What are passive components?A passive component is an electronic component which can only receive energy, which it can either dissipate, absorb or store it in an electric field or a magnetic field. ... Passive components cannot amplify, oscillate, or generate an electrical signal. Common examples of passive components include: Resistors. Inductors. 10. How do I choose a PCB component?6 tips for choosing PCB componentsThink about component footprint decisions.Use good grounding practices.Assign virtual parts footprints.Ensure you have complete BOM Data.Sort reference designators.Check spare gates. Relevant information about "List of Basic Electronic Components"About the article "List of Basic Electronic Components", If you have better ideas, don't hesitate to write your thoughts in the following comment area. You also can find more articles about electronic semiconductor through Google search engine, or refer to the following related articles:Rectifiers and Filters NotesCharacteristics and Functions of DiodesReview and Application of Electronic skinSwitched Mode Power Supply Tutorial: Principles & Functions of SMPS CircuitsTransformers Basics: Construction, Types, Materials and Design

Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes.SummaryResearchers from Purdue University showed a range of concepts and technologies about semiconductor industry at international IEDM 2016 Conference in Dec. 2016. Looking forward to the future of semiconductor,which concepts included innovations to extend the performance of today's silicon-based transistors,along with entirely new types of nanoelectronic devices to complement and potentially replace conventional technology in future computers. This is a device is made from the semiconductor germaniumIssueIn the conference,researchers said,"For the past 50 years, ever more electronic devices envelop us in our day-to-day life, and electronic-device innovation has been a major economic factor in the U.S. and world economy," said Gerhard Klimeck, a professor of electrical and computer engineering and director of Purdue's Network for Computational Nanotechnology in the university's Discovery Park. "These advancements were enabled by making the basic transistors in computer chips ever smaller. Today the critical dimensions in these devices are just some 60 atoms thick, and further device size reductions will certainly stop at small atomic dimensions." New technologies will be needed for industry to keep pace with Moore's law, an observation that the number of transistors on a computer chip doubles about every two years, resulting in rapid progress in computers and telecommunications. It is becoming increasingly difficult to continue shrinking electronic devices made of conventional silicon-based semiconductors, called complementary metal-oxide-semiconductor (CMOS) technology, said Muhammad Ashraful Alam, Purdue University's Jai N. Gupta Professor of Electrical and Computer Engineering. "As transistors are becoming smaller they are facing a number of challenges in terms of increasing their performance and ensuring their reliability," he said. Purdue researchers presented five papers proposing innovative designs to extend CMOS technology and new devices to potentially replace or augment conventional transistors during the annual International Electron Devices Meeting (IEDM 2016) Dec. 5-7 in San Francisco. The conference showcases the latest developments in electronic device technology. Purdue researchers are in the  laboratoryIntegrated circuits, or chips, now contain around 2 billion transistors. The more devices that are packed onto a chip, the greater the heating, with today's chips generating around 100 watts per square centimeter, comparable to that of a nuclear reactor. "As a result, self-heating has become a fundamental concern that hinders performance and can damage transistors, and we are making advances to address it," Alam said. Two of the IEDM conference papers detail research to suppress self-heating and enhance the performance of conventional CMOS chips. The remaining papers deal with new devices for future computer technologies that require lower power to operate, meaning they would not self-heat as significantly. "We are not only working to extend the state-of-art of traditional technology, but also to develop next-generation transistor technologies," Alam said. Transistors are electronic switches that turn on and off to allow computations using the binary code of ones and zeros. A critical component in transistors, called the gate, controls this switching. As progressively smaller transistors are designed, however, this control becomes increasingly difficult because electrons leak around the ultra-small gate. One of the conference papers focuses on a potential solution to this leakage: creating transistors that are surrounded by the gate, instead of the customary flat design. Unfortunately, enveloping the transistor with a gate causes increased heating, which hinders reliability and can damage the device. The researchers used a technique called submicron thermo-reflectance imaging to pinpoint locations of excessive heating. Another paper details a potential approach to suppress this self-heating, modeling how to more effectively dissipate heat by changing how the transistor connects to the complex circuitry in the chip.The three remaining papers propose next-generation devices: networks of nanomagnets, extremely thin layers of a material called black phosphorous and "tunnel" field effect transistors, or FETs. Such technologies would operate at far lower voltages than existing electronics, generating less heat. "You want to use as low a voltage as possible because that reduces power dissipation and if you can reduce power dissipation the battery of your cell phone will last longer, you can do more computing with a smaller amount of power and you will be able to cram more functional elements into a given area," Klimeck said. The tunnel FETS could potentially reduce power consumption by more than 40 times. "Reducing power consumption by a factor of 40 would be a huge development," Klimeck said. Another conference paper details research to develop devices made of black phosphorous, which might one day replace silicon as a semiconductor in transistors. Findings showed the devices can pass large amounts of current with ultra-low resistance while demonstrating good switching performance, said Peide Ye, the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering. "We have demonstrated the highest performance of this kind of 2-D device," Ye said.Peide Ye,the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer EngineeringDevices made from the material also could bring new types of optical and chemical sensors. The devices were created using a technique called chemical vapor deposition in research performed at Purdue's Birck Nanotechnology Center. Future research will include efforts to create smaller black phosphorous devices, Ye said. A fifth paper details how networks of nanomagnets could serve as the building blocks of future computers. Findings show the networks mimic Ising networks - named after German physicist Ernst Ising - which harness mathematics to solve complex probabilistic problems. The nanomagnet networks might be used to draw from huge databases to perform demanding jobs in areas ranging from business and finance, to health care and scientific research. The conventional approach to performing big data computations is through new software running on CMOS devices. However, nanomagnet networks represent a different approach: developing an entirely new type of hardware for the feat, said Zhihong Chen, an associate professor of electrical and computer engineering.The nanomagnet arrays are potential building blocks for probabilistic computer hardware has been proved. Researchers are still in unremitting efforts to creat new semiconductor technologies.  Article Provided by Purdue UniversityArticle edited by kynix

Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes.SummaryFujitsu,a company that provide innovative IT services and digital technologies like mobile,AI,cloud or etc,announced the development of a gallium-nitride(GaN) high-electron mobility transistor(HEMT) power amplifier for use in W-band(75-110 GHz)transmissions in July 2017 at the 12th international Conference. To realize long-distance,high-capacity wireless communications,a promising approach is to utilize the W-band and other high frequency bands that encompass a broad range of usable frequencies, and increase output with a transmission power amplifier. At the same time, demand exists for improved efficiency in power amplifiers in order to mitigate the increased power consumption of communication systems. Fujitsu has now succeeded in developing a power amplifier for use in W-band transmissions that offers both high output power and high efficiency, improving transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance. Fujitsu has achieved 4.5 watts per millimeter of gate width, the world's highest output density in the W-band, and has confirmed a 26% reduction in energy consumption compared to conventional technology. Fujitsu anticipates that setting this power amplifier between wireless communication systems in two locations will achieve high-bandwidth communications at 10 gigabits per second (Gbit/s) over a distance of 10km. Part of this research was carried out with support from Innovative Science and Technology Initiative for Security, established by the Acquisition, Technology & Logistics Agency (ATLA), Japan Ministry of Defense. Development Background Wireless data traffic from mobile communications has increased dramatically over the last few years, and with the spread of 5G and IoT devices it is predicted to increase at an annual growth rate of 1.5 times until the year 2020. In order to build this sort of high capacity next-generation wireless communications network, attention has been focused on wireless communication technology using the high frequency W-band. The range of frequencies that can be used in the W-band is very broad, and because communication speed can be rapidly increased in this band, it is well-suited for this kind of high bandwidth wireless communication. Conventional wireless communications technology, has allowed for performance of several Gbit/s over distances of several kilometers, but achieving an even greater increase in wireless communication distance and capacity utilizing the W-band demands further increases to the output of power amplifiers to boost signals during transmission. Issues To increase distance and capacity, it will be necessary to expand the frequency bandwidth that can be amplified while simultaneously supporting modulation methods that can transmit more information within the same frequency bandwidth, and a strong requirement is to have less distortion when the signal is amplified. Another pursuit is keeping in check the energy consumption of communication systems that accompanies greater distances and capacities, and the improved energy efficiency in power amplifiers.In order to both increase the distance and capacity of wireless communications and decrease energy consumption with indium-aluminum-gallium-nitride (InAlGaN) HEMTs, Fujitsu has developed two technologies that effectively reduce internal resistance and current leakage. Features of the newly developed technologies are as follows: Technology to reduce internal resistance Fujitsu has developed device technology that can reliably reduce resistance to one tenth that of previous technology when current flows between the source or drain electrodes and the GaN-HEMT device. The technology utilizes a manufacturing process that embeds GaN plugs directly below the source and drain electrodes, which generate electrons at high densities (fig. 1). It is necessary to transport the electrons that come from the source electrode to the two dimensional electron gas field as smoothly as possible. The structure of the previous technology causes the electron supply layer to become a barrier, however, and internal resistance increases between the source electrode and the two dimensional electron gas. By applying this new technology, Fujitsu succeeded in running high currents through the transistor with significantly less resistance (fig. 2). Technology to control current leakageA current leakage occurs when the two dimensional electron gas, which moves at high speed on the boundary at the top of the channel layer, takes a detour below the gate when the transistor is in its off-state. This leakage causes deterioration in the operational performance of the power amplifier. Normally, it is possible to reduce current leakage by placing a barrier layer beneath the channel layer, but in that case the amount of two dimensional electron gas also decreases, and leads to a reduction of the drain current. This new technology maintains high drain currents by effectively distributing indium-gallium-nitride (InGaN) to create a barrier layer below the channel layer. This reduces electron detours during operation, successfully providing significant reductions in current leakage(just see the fist and second picture).Effects The previous world record for power amplifier output density in the W-band for transmitters was 3.6 watts per millimeter of gate width with technology developed by Fujitsu Laboratories. This has improved significantly with the newly developed technology, which delivers power output of 4.5 watts per millimeter of gate width for a power amplifier designed to operate at 94GHz. In addition, this new technology achieved a reduction in energy consumption of 26% compared to the previous technology through a reduction in current leakage. It is anticipated that the use of this power amplifier will allow the achievement of high capacity, long distance wireless communications between two connected systems at different locations at over 10Gbit/s and at distances greater than 10km.Fujitsu aims to apply this technology broadly to the development of power amplifiers for purposes that call for wireless communications that offer long range and higher capacity, while offering easier installation than fiber optics. The goal is to commercialize this technology in high speed wireless communication systems by 2020, with an aim to employ it in such situations as a method of restoring communications when fiber optic cables have been severed by natural disasters or as a way of setting up temporary communications infrastructure when holding events.  Article provide by FujitsuArticle edited by kynix

SummaryFor years,people had treated the poor conductivity of organics as an unavoidable fact,and this shows that that is no always the case. Said Stephen Forrest,the Peter A. Franken Distinguished University Professor of Engineering and Paul G. Goebel Professor of Engineering at U-M, who led the research,which is  a way to coax electrons to travel much further than was previously thought possible in the materials often used for organic solar cells and other organic semiconductors under the condition of pushing cheap,ubiquitous solar power closer to reality. The fatal weakness of organic material may adjust its conductivityUnlike the inorganic solar cells widely used today, organics can be made of inexpensive, flexible carbon-based materials like plastic. Manufacturers could churn out rolls of them in a variety of colors and configurations, to be laminated unobtrusively into almost any surface. Organics’ notoriously poor conductivity, however, has slowed research. Forrest believes this discovery could change the game.  The team showed that a thin layer of fullerene molecules—the curious round carbon molecules also called Buckyballs—can enable electrons to travel up to several centimeters from the point where theyre knocked loose by a photon. That’s a dramatic increase; in today's organic cells, electrons can travel only a few hundred nanometers or less. But organic materials have much looser bonds between individual molecules, which can trap electrons. This has long been an Achilles’ heel of organics, but the new discovery shows that it may be possible to tweak their conductive properties for specific applications. The ability to make electrons move more freely in organic semiconductors The ability to make electrons move more freely in organic semiconductors could have far-reaching implications. For example, the surface of today's organic solar cells must be covered with a conductive electrode that collects electrons at the point where they’re initially generated. But freely moving electrons can be collected far away from their point of origination. This could enable manufacturers to shrink the conductive electrode into an invisible grid, paving the way for transparent cells that could be used on windows and other surfaces. “This discovery essentially gives us a new knob to turn as we design organic solar cells and other organic semiconductor devices,” said Quinn Burlingame, a U-M electrical engineering and computer science graduate researcher and author on the study. “The possibility of long-range electron transport opens up a lot of new possibilities in device architecture.” Burlingame says that the initial discovery of the phenomenon came as something of an accident as the team was experimenting with organic solar cell architecture in hopes of boosting efficiency. Using a common technique called vacuum thermal evaporation, they layered in a thin film of C60 fullerenes—each made of 60 carbon atoms—on top of an organic cell's power-producing layer, where the photons from sunlight knock electrons loose from their associated molecules. On top of the fullerenes, they put another layer to prevent the electrons from escaping. They discovered something they’d never seen before in an organic—electrons were skittering unfettered through the material, even outside the power-generating area of the cell. Through months of experimentation, they determined that the fullerene layer formed what's known as an energy well—a low-energy area that prevents the negatively charged electrons from recombining with the positive charges left behind in the power-producing layer.“You can imagine an energy well as sort of a canyon—electrons fall into it and can’t get back out,” said Caleb Cobourn, a graduate researcher in the U-M Department of Physics and an author on the study. “So they continue to move freely in the fullerene layer instead of recombining in the power-producing layer, as they normally would. It's like a massive antenna that can collect an electron charge from anywhere in the device.”Forrest cautions that widespread use of the discovery in applications like solar cells is theoretical at this point. But, he is excited by the discovery’s larger implications for understanding and exploiting the properties of organic semiconductors. “I believe that ubiquitous solar power is the key to powering our constantly warming and increasingly crowded planet, and that means putting solar cells on everyday objects like building facades and windows,” Forrest said. “Technology like this could help us produce power in a way that’s inexpensive and nearly invisible.” The study is titled “Centimeter-Scale Electron Diffusion in Photoactive Organic Heterostructures.” The research was supported by the U.S. Department of Energy SunShot Program and by the Air Force Office of Scientific Research.    Article from University of MichiganArticle edited by kynix 

SummaryAn innovative new method to engineer computer chips more easily and cheaper than conventioanl methods have been developed by researchers who from the University of Exeter.This new technique to produce cutting-edge,versatile microchips could revolutionize the speed,efficiency and capability of the next-gen of computers.About the researchThe discovery could revolutionise the production of optoelectronic materials – or devices that produce, detect and control light – which are vital to the next generation of renewable energy, security and defence technologies, the researchers said.Dr Anna Baldycheva, from Exeter's Centre for Graphene Science and author of the paper said:"This breakthrough will hopefully lead to a revolution in the development of vital new materials for computer electronics. The work provides a solid platform for the development of novel next-generation optoelectronic devices. Additionally, the materials and methods used are extremely promising for a wide range of further potential applications beyond the current devices." This innovative new research focused on developing a versatile,multi-functional technology to significantly enhance future computing capabilities. The team used microfluidics technology, which uses a series of minuscule channels in order to control the flow and direction of tiny amounts of fluid. For this research, the fluid contains graphene oxide flakes,that are mixed together in the channels, to construct the chips.While the graphene oxide flakes are two-dimensional- consisting of length and width only- the research team used a new sophisticated light-based system to drive the assembly of the three-dimensional chip structures.Crucially, the research team have analysed their methodology to not only confirm the technique is successful, but also to provide a blueprint for others to use to help manufacture the chips. "We are very excited about the potential of this breakthrough and look forward to seeing where it can take the optoelectronics industry in the future." added by professor Monica Craciun, co-author of the paper and Associate Professor of Nanoscience at Exeter.  This article provide by University of Exeter,and the research is  published in the respected journal Scientific Reports.Article edited by kynix. 

SummaryAccording to recent market research by Grand View Research,the global power electronics market will be valued at $39.2bn by 2025.To ensure electrical products and infrastructure are capable of supporting this 40% growth, REO UK is calling on laboratories and testing facilities to invest in stable DC power supplies for electrical testing. Electrical testing is a critical part of the design and development of power electronics and electrical components. Electricla Testing WorkElectrical testing involves running accurately monitored voltages through a component or product to ensure it is capable of withstanding and performing under specified currents. This ensures smooth performance and correct specification details once the tested equipment is on the market.  REO UK has worked extensively with test facilities and laboratories in the past and has identified a recurring problem of poor power quality affecting test accuracy. The company has previously launched ranges of electrical power supplies to provide stepless voltage adjustment to overcome this issue.  Steve Hughes,Managing Director of REO UK said: " Testing requires absolute accuracy to ensure  that products are reliable,safe and able to perform,if the market for power electronics is to reach its projected 40% growth in the coming decade, testing must be accurately controlled and reliable to ensure a consistently high standard of products."  Test Facilities disadvantage"Unfortunately,we often see that test facilities lack this control, either due to inaccurate electrical equipment or electromagnetic interference (EMI) making the current unreliable.” Up to now, the company has  stepped up its focus on test facilities with its new REOLAB 1000E electronic DC power supply for test equipment. The product is designed for use in testing the operating current of semiconductor diodes and rectifiers, as well as the maximum DC reverse voltage of a system up to 1,200V.  “Our new REOLAB 1000E helps to tackle the lack of electrical control with its stepless voltage adjustments and current tolerance of ±1%,” continued Hughes. “This tolerance level means that the supplied power is highly accurate and controllable.“In addition to this, the REOLAB range has a design that complies with electromagnetic compatibility (EMC) standards to prevent creating power quality problems. This ensures test and laboratory facilities can test properly and effectively with minimal concerns over unstable loads.”