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Introduction The rectifier diode is a semiconductor device that converts AC into DC. Usually it contains a PN junction with two terminals, a positive electrode and a negative electrode. The most important characteristic is unidirectional conductivity. In electronic circuits, its breakdown voltage is high, the reverse leakage current is small, and the high temperature performance is good. Generally, it can be made of materials such as semiconductor germanium or silicon. In addition, high-voltage and high-power rectifier diodes are made of high-purity single crystal silicon (it is easy to reverse breakdown when there is more doping). This kind of device has a large junction area and can pass a large current (up to thousands of amperes), but the operating frequency is not high, generally below tens of KHz. Rectifier diodes are mainly used in various low-frequency half-wave rectifier circuits. If require full-wave rectification, several diodes need to be connected to form a rectifier bridge. What is a Rectifier? (AC to DC) Catalog Introduction Ⅰ Common Parameters Ⅱ Rectifier Diodes Selection Ⅲ Rectifier Common Failures Ⅳ Rectifier Diodes Detection Ⅴ Rectifier Diode Replacement 5.1 Replacing Rules 5.2 Commonly Used Rectifier Models List Ⅵ Rectifier Diode Circuit Types 6.1 Half-Wave Rectifier Circuit 6.2 Full-Wave Rectifier Circuit 6.3 Bridge Rectifier Circuit Ⅶ High-frequency Rectifier Diodes Ⅷ FAQ Ⅰ Common Parameters The rectifier diode uses the unidirectional conductivity of the PN junction to convert alternating current into pulsating direct current. Rectifier diodes have a large leakage current, and most of them are diodes packaged with surface mount materials. The parameters of the rectifier diode include the maximum rectifier current, which refers to the maximum current value allowed by the rectifier diode for long-term operation. It is the main parameter of the rectifier diode and the main basis for the option of the rectifier diode. Except it, other important parameters are introduced here.(1) Maximum average rectified current IF: It refers to the maximum forward average current allowed to pass through the diode during long-term operation. The current is determined by the PN junction area and the heat dissipation conditions. It should be noted that the average current passing through the diode cannot be greater than this value, and has heat dissipation.(2) Maximum reverse working voltage VR: It refers to the maximum reverse voltage allowed to be applied across the diode. If it is greater than this value, the reverse current (IR) will increase sharply, and the unidirectional conductivity of the diode will be destroyed, causing reverse breakdown. Usually take half of the reverse breakdown voltage VB as VR.(3) Maximum reverse current IR: It is the reverse current allowed to flow through the diode under the highest reverse working voltage. This parameter reflects the quality of the unidirectional conductivity of the diode. Therefore, the smaller the current value, the better the diode quality.(4) Breakdown voltage VB: It refers to the voltage value at the sharp bend point of the reverse volt-ampere characteristic curve of the diode. When the reverse is a soft characteristic, it refers to the voltage value under a given reverse leakage current condition.(5) The highest operating frequency fm: It is the highest operating frequency of the diode under normal conditions. It is mainly determined by the junction capacitance and diffusion capacitance of the PN junction. If the operating frequency exceeds fm, the unidirectional conductivity of the diode will not be well reflected.(6) Reverse recovery time trr: It refers to the reverse recovery time under the specified load, forward current and maximum reverse transient voltage.(7) Zero-bias capacitor CO: It refers to the sum of the capacitance of the diffusion capacitance and the junction capacitance when the voltage across the diode is zero. It is worth noting that, due to the limitation of the manufacturing process, even the same type of diode has a large dispersion of its parameters. The parameters given in the manual are often within a range. If the test conditions change, the corresponding parameters will also change. For example, the IR of the 1N5200 series silicon plastic rectifier diode measured at 25°C is less than 10uA, and at 100°C IR becomes less than 500uA.     Ⅱ Rectifier Diodes Selection Rectifier diodes are generally planar silicon diodes, which are used in various power rectifier circuits. When selecting a rectifier diode, the parameters such as its maximum rectifier current, maximum reverse working current, cut-off frequency and reverse recovery time should be mainly considered.The rectifier diode used in the ordinary series stabilized power supply circuit does not require high reverse recovery time of the cut-off frequency. The rectifier diode with the maximum rectified current and maximum reverse working current should meet the requirements of the circuit.The rectifier diode used in the rectifier circuit of the switching regulated power supply and the pulse rectifier circuit should be a rectifier diode with a higher operating frequency and shorter reverse recovery time (such as RU series, EU series, V series, 1SR series, etc.) or select fast recovery diodes, or Schottky rectifier diode.     Ⅲ Rectifier Common Failures (1) Inadequate lightning protection and poor overvoltage protection. The rectifier device is not equipped with lightning protection and overvoltage protection devices. Or insufficient routine maintenance of the equipment.(2) Poor operating conditions. In the indirect drive generator set, because the calculation of the speed ratio is incorrect or the ratio of the diameters of the two belt pulleys does not meet the requirements of the speed ratio, the generator runs at a high speed for a long time, so the rectifier is at a higher voltage for a long time. It accelerates the rectifier aging, and was damaged by premature breakdown.(3) Poor operation management. The load failure or diode breakdown doesn’t fixed in time.(4) Poor equipment installation or manufacturing process. The generator set has been operating under large vibration for a long time, which affects the rectifier tube operation. At the same time, because the generator set speed is unstable, the working voltage of the rectifier tube also fluctuates, which greatly accelerate the aging and damage of the rectifier tube.(5) The specifications and models of the rectifier tube do not match. When replacing a new rectifier tube, wrongly replace the tube whose working parameters do not meet the requirements or the wiring is wrong, causing the rectifier tube to breakdown and damage.(6) The safety margin of the rectifier tube is too small. The overvoltage and overcurrent safety margin of the rectifier tube is too small, so that the rectifier tube cannot withstand the overvoltage or the peak value of the overcurrent transient process that occurs in the generator excitation circuit and is damaged. Figure 1. Diode as Rectifier Symbol     Ⅳ Rectifier Diodes Detection Here is a more general and simple method. Remove all the rectifier diodes in circuit, use the 100×R or 1000×R ohm range of a multimeter to measure the two lead wires of the rectifier diode (adjust and test twice). If the resistance values measured twice are very different, for example, the resistance value is as high as a few hundred kΩ to infinity, or the resistance value is only a few hundred Ω or less, indicating that the diode is good (except under special circumstances). If the resistance value measured twice is almost the same and the resistance value is very small, it means that the diode has been broken down and cannot be used. In addition, if the resistance values measured twice are both infinite, it means that the diode has been internally disconnected and cannot be used.     Ⅴ Rectifier Diode Replacement   5.1 Replacing Rules After the rectifier diode is damaged, you should replace with the same model or another model with the same parameters.Generally, rectifier diodes with high withstand voltage (reverse voltage) can be substituted for rectifier diodes with low withstand voltage, while rectifier diodes with low withstand voltage cannot be replaced with rectifier diodes with high withstand voltage. A diode with a high rectification current value can be substituted for a diode with a low rectification current value, while a diode with a low rectification current value cannot be substituted for a diode with a high rectification current value.   5.2 Commonly Used Rectifier Models List Material Model Reverse Voltage Operation (peak) Average Rectified Current   Silicon Rectifier Diode 1N4001 50V 1A (Ir=5uA,Vf=1V,Ifs=50A) 1N4002 100V 1A 1N4003 200V 1A 1N4004 400V 1A 1N4005 600V 1A 1N4006 800V 1A 1N4007 1000V 1A 1N4148 75V 4PF, Ir=25nA,Vf=1V 1N5391 50V 1.5A (Ir=10uA,Vf=1.4V,Ifs=50A) 1N5392 100V 1.5A 1N5393 200V 1.5A 1N5394 300V 1.5A 1N5395 400V 1.5A 1N5396 500V 1.5A 1N5397 600V 1.5A 1N5398 800V 1.5A 1N5399 1000V 1.5A 1N5400 50V 3A (Ir=5uA,Vf=1V,Ifs=150A) 1N5401 100V 3A 1N5402 200V 3A 1N5403 300V 3A 1N5404 400V 3A 1N5405 500V 3A 1N5406 600V 3A 1N5407 800V 1A (Ir=5uA,Vf=1V,Ifs=50A) 1N5408 1000V 1A   Ⅵ Rectifier Diode Circuit Types The power grid supplies users with alternating current, and various electrical devices require direct current. Rectification is the process of converting AC into DC. Utilizing the device with unidirectional conductivity, the current of alternating direction and magnitude can be converted into direct current. The following introduces three main rectifier circuits composed of crystal diodes.   6.1 Half-Wave Rectifier Circuit Figure 2. Half-Wave Rectifier Circuit The figure shows the simplest rectifier circuit. It is composed of power transformer B, rectifier diode D and load resistor Rfz. The transformer transforms the voltage into the required alternating voltage e2, and then D transforms the AC into pulsating DC.The transformer threshold voltage e2 is a sine wave voltage whose direction and magnitude change with time, and its waveform is shown in Figure (a). In the 0~K time, e2 is a positive half cycle, that is, the upper end of the transformer is positive and the lower end is negative. At this time, the diode is in forward conductive conduction, and e2 is added to the load resistor Rfz through it. Within π~2π, e2 is in negative half cycle, the lower end of the transformer secondary is positive, and the upper end is negative. At this time, D bears the reverse voltage and does not conduct, and there is no voltage on Rfz. In the time of π~2π, the process of 0~π time is repeated, and in the time of 3π~4π, the process of π~2π time... half-cycle through Rfz, a single right direction voltage is obtained on Rfz (up positive and lower negative), as shown in Figure (b), which achieves the purpose of rectification. But the load voltage Usc, and the load current also changes with time, so it is usually called pulsating DC. Figure 3. Half-Wave Rectifier Wave This rectification method of removing the first half week and leaving half a week is called half wave rectification. It is not difficult to note that the half-wave rectification is at the expense of consuming half of the AC in circuit, and the current utilization rate is very low. According to it, half-wave rectifier diode is commonly used in high voltage and small current occasions, and is rarely used in general radio devices.   6.2 Full-Wave Rectifier Circuit Figure 4. Full-Wave Rectifier Circuit If some adjustments are made to the structure of the rectifier circuit, a full-wave rectifier circuit that can be obtained. The figure above is the electrical schematic diagram of the full-wave rectifier circuit.The full-wave rectifier circuit can be regarded as a combination of two half-wave rectifier circuits. A tap needs to be drawn in the middle of the secondary coil of the transformer to divide the secondary coil into two symmetrical windings, so as to get two voltages e2a and e2b of equal size but opposite polarity to form two energized circuits.The working principle of the full-wave rectifier circuit can be illustrated by the waveform diagram. Between 0 and π, e2a is a positive voltage to Dl, D1 is turned on, and a up positive and down negative voltage is obtained on Rfz. e2b is a reverse voltage to D2, and D2 is not conductive (see Figure(b) ). In the time of π-2π, e2b is a positive voltage to D2, D2 is turned on, and the voltage obtained on Rfz is still up positive and down negative voltage, therefore e2a is a reverse voltage to D1, and D1 is not conductive (see figure (c). Figure 5. Full-Wave Rectifier Circuit Wave Repeated this way, because the two rectifier elements D1 and D2 conduct electricity in turn, the result is that the load resistor Rfz has the same direction of current at the positive and negative half cycles, as shown in Figure(b). This is full-wave rectification, which not only uses the positive half-cycle, but also cleverly uses the negative half-cycle. Full-wave rectifier greatly improves the rectification efficiency. Figure 6. Full-Wave Rectifier Circuits This circuit requires the transformer to have a secondary center tap that makes the two ends symmetrical, which brings a lot of trouble to the production. In addition, in this circuit, the maximum reverse voltage that each rectifier diode can withstand is twice the maximum value of the transformer secondary voltage, so diodes should withstand higher voltages.   6.3 Bridge Rectifier Circuit Figure 7. Bridge Rectifier Circuit The bridge rectifier circuit is the most used rectification circuit. It has the advantages of a full-wave rectifier circuit as long as two diode ports are connected to form a bridge structure, so its shortcomings are overcome to a certain extent.The bridge rectifier circuit is as follows: Figure 8. Bridge Rectifier Circuit (a) When e2 is a positive half cycle, D1, D3 and the direction voltage, D1, D3 are turned on; D2, D4 are applied with reverse voltage, they are turned off. E2, Dl, Rfz, and D3 are energized a loop in the circuit. On Rfz, a positive and negative half-wave washing voltage is formed. When e2 is a negative half cycle, a positive voltage is applied to D2 and D4, and they are turned on; Apply reverse voltage to D1 and D3, they are cut off. E2, D2Rfz, and D4 are energized a loop in the circuit, and the other half-wave rectified voltage is also formed on Rfz. Figure 9. Bridge Rectifier Circuit (b) If repeated, a full-wave rectified voltage at Rfz is made. The waveform diagram is the same as the full-wave rectifier. It is not difficult to see from the figure that the reverse voltage of each diode in the bridge circuit is equal to the maximum value of the secondary voltage of the transformer, which is half smaller than the full-wave cleaning circuit.     Ⅶ High-frequency Rectifier Diodes The rectifier diode in the switching power supply must have the characteristics of low forward voltage reduction and fast recovery, and should also have sufficient output power. The following three types of high-frequency diodes can be used: fast recovery rectifier, ultra-fast recovery rectifier, and Schottky diode rectifier.Fast recovery and ultra-fast recovery rectifier diodes have moderate and high forward voltage drop, and the range is from 0.8 to 1.2V. These two types of rectifier diodes also have higher cut-off voltage parameters. Therefore, they are particularly suitable for use in low-power auxiliary power circuits with output voltages around 12V.Compared with general rectifier diodes, the reverse recovery time difference between fast recovery rectifier diodes and ultra-fast recovery rectifier diodes is reduced to the nanosecond level, thus greatly improving the efficiency of the power supply. According to experience, when choosing a fast recovery rectifier diode, its reverse recovery time should be at least 1/3 of the rise time of the switching transistor. These two kinds of rectifier diodes also reduce the switching voltage spike, because it will affect the ripple of the output DC voltage.Whether fast recovery rectifier diodes and ultra-fast recovery rectifier diodes used in switching power supplies need a heat sink, which depends on the maximum power of the circuit. Under normal circumstances, the allowable junction temperature is 175°C during manufacture. The manufacturer has a technical parameters provided for the designer to calculate the maximum output operating current, voltage, and case temperature. Even under the action of a large forward current, the forward voltage drop of Schottky rectifier diodes is very low, only about 0.4V. Moreover, as the junction temperature increases, its forward voltage drop decreases. Therefore, Schottky rectifier diodes are particularly suitable for low-voltage output circuits around 5V. Its reverse recovery time is negligible, because this device is a semiconductor device with majority carrier. During the switching process of the device, there is no need to remove the stored charge of the minority carrier.Schottky rectifier diodes have two major shortcomings: First, the reverse cut-off voltage tolerance is low, about 100V; second, the reverse leakage current is large, making the device more susceptible to have heat breakdown than other types of rectifier devices. Of course, these shortcomings can also be overcome by adding a transient overvoltage protection circuit and appropriately controlling the junction temperature.     Ⅷ FAQ 1. How does a rectifier diode work?A rectifier is a device that converts an Alternating Current (AC) into a Direct Current (DC) by using one or more contact diodes. ... In simple words, a diode allows current in just one direction. This unique property of the diode allows it to act sort of a rectifier by converting an alternating current to a DC source.   2. What is a function of rectifier diode?A rectifier diode is an electrical device that converts alternating current (AC), which periodically reverses direction, to direct current (DC).   3. What is the function of diode in rectifier circuit?A characteristic of diodes is that current flows (forward direction) or current does not flow (reverse direction) depending on the direction of applied voltage. This works to convert alternating current (AC) voltage to direct current (DC).   4. Which is used as rectifier?We know that the core use of rectifier is to convert AC current into DC current. The rectifier consists of semiconductor diodes to do this function.   5. What is the limitation of a diode rectifier?Disadvantages of Full Wave Bridge RectifierIt needs four diodes. The circuit is not suitable when a small voltage is required to be rectified. It is because, in this case, the two diodes are connected in series and offer double voltage drop due to their internal resistance.   6. What is the ideal rectifier diode efficiency?It is the ratio of DC output power to the AC input power. The rectifier efficiency of a full-wave rectifier is 81.2%.   7. What is a fast recovery rectifier?Definition: Fast Recovery Diode is a semiconductor device which possesses short reverse recovery time for rectification purpose at high frequency. A quick recovery time is crucial for rectification of high-frequency AC signal. Diodes are mostly used in rectifiers because they possess ultra-high switching speed.   8. Which diode is fast recovery diode?FRD stands for fast recovery diodes. They offer high-speed support and generally have a trr of approximately 50 to 100 ns. With a VF of approximately 1.5V, it is rather large when compared to general rectifying diodes. Another generic term for the FRD type would be a “High-speed Diode.”   9. What is ultra fast recovery diode?A fast diode is a faster-than-standard current rectifier. ... A fast rectifier typically recovers ten times faster than a standard rectifier, and an ultrafast designation is usually applied to rectifiers designed to beat the standard rectifier recovery by being more than fifty times faster.   10. What is the difference between a Schottky diode and a rectifier diode?Schottky diode, also known as barrier diode is mainly used in low voltage circuits because the forward voltage drop of Schottky diode(Vf) is less than a rectifier diode. The forward voltage drop of a Schottky diode is typically in the range of . 25 to 0.5 V whereas the Vf of a rectifier diode is around 0.7 volts.   11. What is Schottky barrier rectifier?The Schottky diode or Schottky Barrier Rectifier is named after the German physicist Walter H. Schottky, is a semiconductor diode designed with a metal by the semiconductor junction. It has a low-forward voltage drop and a very rapid switching act. ... Actually, it is one of the oldest semiconductor devices in reality.

IntroductionThe manufacture of each semiconductor components products requires hundreds of processes. After sorting, the entire manufacturing process is divided into eight steps: Wafer Processing, Oxidation, Photography, Etching, Film Deposition, Interconnection, Test, and Package.Figure 1. Semiconductor Parts Manufacturing ProcessCatalogIntroductionⅠ Wafer ProcessingⅡ OxidationⅢ PhotomaskⅣ EtchingⅤ Film DepositionⅥ InterconnectionⅦ TestⅧ PackageⅠ Wafer ProcessingFewer people know, all semiconductor processes start with a grain of sand. Because the silicon contained in sand is the raw material needed to produce wafers. A wafer is a round slice formed by cutting a single crystal column made of silicon (Si) or gallium arsenide (GaAs). To extract high-purity silicon materials, silica sand is required, a special material with a silicon dioxide content of up to 95%, which is also the main raw material for making wafers. Wafer processing is the process of making and obtaining wafers.Semiconductor Production Process Explained① Ingot CastingFirst, the sand needs to be heated to separate the carbon monoxide and silicon, and the process is repeated until the ultra-high purity electronic grade silicon (EG-Si) is obtained. High-purity silicon melts into a liquid, and then solidifies into a single-crystal solid form called an "ingot", which is the first step in semiconductor manufacturing. The manufacturing precision of silicon ingots (silicon pillars) is very high, reaching the nano level.② Ingot CuttingAfter the previous step is completed, you need to cut off both ends of the ingot with a diamond saw, and then cut it into slices of a certain thickness. The diameter of the ingot slice determines the size of the wafer. Larger and thinner wafers can be divided into more units, which helps reduce production costs. After cutting the silicon ingot, it is necessary to add a "flat area" or "indent" mark on the slice, so that it is convenient to set the processing direction based on it as a standard in the subsequent steps.③ Wafer Surface PolishingThe thin slice obtained through the above-mentioned cutting process is called a "die", that is, an unprocessed "raw wafer". The die surface is uneven, and it is impossible to directly print circuit patterns on it. Therefore, it is necessary to first remove surface defects through grinding and chemical etching processes, then form a smooth surface through polishing and then cleaning residual contaminants. Ⅱ OxidationThe role of the oxidation process is to form a protective film on the surface of the wafer. It can protect the wafer from chemical impurities, prevent leakage current from entering the circuit, diffusion during ion implantation, and the wafer from slipping off during etching.Figure 2. OxidationThe first step of the oxidation process is to remove impurities and pollutants, such as organic matter, metals and evaporation residual moisture with four steps. After the cleaning is completed, the wafer can be placed in a high temperature environment of 800 to 1200 degrees Celsius, and a layer of silicon dioxide is formed by the flow of oxygen or vapor on the wafer surface. Oxygen diffuses through the oxide layer and reacts with silicon to form oxide layers of different thicknesses, which can be measured after the oxidation is complete.✔️Dry Oxidation and Wet Oxidation MethodAccording to the different oxidants in the oxidation reaction, the thermal oxidation process can be divided into dry oxidation and wet oxidation. The former uses pure oxygen to produce a silicon dioxide layer, which is slow but the oxide layer is thin and dense. The latter requires both oxygen and high solubility. The characteristic of water vapor is that the growth rate is fast, but the protective layer is relatively thick and the density is low.Figure 3. Dry Oxidation and Wet Oxidation MethodIn addition to the oxidizer, there are other variables that affect the thickness of the silicon dioxide layer. First of all, the wafer structure, surface defects and internal doping concentration will affect the rate of formation of the oxide layer. In addition, the higher the pressure and temperature generated by the oxidation equipment, the faster the oxide layer will be formed. In the oxidation process, it is also necessary to use dummy wafers according to the location of the wafers in the unit to protect the wafers and reduce the difference in oxidation degree. Ⅲ PhotomaskPhotomask is the use of light to "print" circuit patterns onto a wafer. We can understand it as semiconductor parts drawing on the surface of the wafer. The higher the fineness of the circuit pattern, the higher the integration of the product chip, which can only be achieved through advanced photomask technology. Specifically, it can be divided into three steps: photoresist coating, exposure and development.① Coated PhotoresistThe first step in drawing a circuit on a wafer is to coat photoresist on the oxide layer. Photoresist changes the chemical properties of the wafer to become "photographic paper". The thinner the photoresist layer on the surface of the wafer, the more uniform the coating, and the finer the patterns that can be printed. In addition, this step can use the "spin coating" method.Figure 4. Coating PhotoresistAccording to the difference of UV light reactivity, photoresist can be divided into two types: positive glue and negative glue. The former will decompose and disappear after being exposed to light, leaving a pattern of unreceived areas, while the latter will polymerize after being exposed to light to let the pattern of the light-receiving part appear.② ExposeAfter covering the photoresist film on the wafer, the circuit can be printed by controlling the light irradiation. This process is called "exposure." We can selectively pass light through the exposure equipment. When the light passes through the mask containing the circuit pattern, the circuit can be printed on the wafer coated with a photoresist film underneath.Figure 5. ExposureDuring the exposure process, the finer the printed pattern, the more components can be accommodated in the final chip, which helps to improve production efficiency and reduce the cost of individual components. ③ DevelopmentThe step after exposure is to spray developer on the wafer, in order to remove the photoresist in the area not covered by the pattern, so that the printed circuit pattern can be revealed. After the development is completed, it needs to be checked by various measuring equipment and optical microscopes to ensure the quality of the drawing of the circuit diagram. Ⅳ EtchingAfter the photolithography of the circuit diagram is completed on the wafer, an etching process is used to remove any excess oxide film and only the semiconductor circuit diagram is left. To do this, liquid, gas or plasma is used to remove the unselected parts.There are two main etching methods, depending on the material used: wet etching that uses a specific chemical solution for chemical reaction to remove the oxide film, and dry etching that uses gas or plasma.1) Wet EtchingFigure 6. Wet Etching MethodWet etching that uses chemical solutions to remove oxide films has the advantages of low cost, fast etching speed, and high productivity. However, wet etching has the characteristics of isotropy, that is, its speed is the same in any direction. This will cause the mask (or sensitive film) and the etched oxide film to not be completely aligned, making it difficult to process very fine circuit diagrams.2) Dry EtchingDry etching can be divided into three different types:The first is chemical etching, which uses etching gas (mainly hydrogen fluoride). Like wet etching, this method is also isotropic, which means that it is not suitable for fine etching.The second method is physical sputtering, that is, ions in the plasma are used to strike and remove the excess oxide layer. As an anisotropic etching method, it has different etching speeds in the horizontal and vertical directions, so its fineness must exceed that of chemical etching. However, the disadvantage of this method is that the etching speed is slow, because it completely relies on the physical reaction caused by ion collision.Figure 7. Physical SputteringThe third method is reactive ion etching (RIE). It combines the first two methods, that is, while using plasma for ionized physical etching, and chemical etching is performed with free radicals generated after plasma activation. In addition to the etching speed exceeding the first two methods, RIE can use the characteristics of ion anisotropy to achieve high-definition pattern etching.Figure 8. Reactive Ion Etching (RIE)Now dry etching has been widely used to improve the yield of fine semiconductor circuits. Maintaining the uniformity of full-wafer etching and increasing the etching speed are crucial. Today's most advanced dry etching equipment is supporting the production of the most advanced logic and memory chips with higher performance. Ⅴ Film DepositionIn order to create the micro devices inside the chip, we need to continuously deposit layers of thin films and remove the excess parts by etching, and add some materials to separate the different devices. Each transistor or memory cell is constructed step by step through the above process. The "thin film" we are talking about here refers to a "membrane" whose thickness is less than 1 micron (μm, one millionth of a meter) and cannot be manufactured by ordinary mechanical processing methods. Here the process of putting a thin film containing the desired molecular or atomic unit on the wafer is "deposition."Figure 9. DepositionTo form a multi-layer semiconductor structure, we need to fabricate a device stack first, that is, alternately stacking multiple thin metal (conductive) films and dielectric (insulating) films on the surface of the wafer, and then repeat the etching process to remove excess parts and form a three-dimensional structure. Technologies that can be used in the deposition process include chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD). The methods using these technologies can be divided into dry and wet deposition.① Chemical Vapor DepositionFigure 10. Chemical Vapor DepositionIn chemical vapor deposition, the precursor gas chemically reacts in the reaction chamber and generates a thin film attached to the surface of the wafer and by-products that are drawn out of the chamber.Plasma-enhanced chemical vapor deposition requires the use of plasma to generate reactive gas. This method reduces the reaction temperature and is very suitable for temperature-sensitive structures. In addition, the use of plasma can also reduce the number of depositions, which can often lead to higher quality films.② Atomic Layer DepositionFigure 11. Atomic Layer DepositionAtomic layer deposition forms a thin film by depositing only a few atomic layers at a time. The key to this method is to loop the independent steps in a certain order and maintain good control. Coating the precursor on the wafer surface is the first step, after which different gases are introduced to react with the precursor to form the required substances on the wafer surface.③ Physical Vapor DepositionFigure 12. Physical Vapor DepositionPhysical vapor deposition refers to the formation of thin films by physical means. Sputtering is a physical vapor deposition method. Its principle is that atoms of the target material are sputtered out by the bombardment of argon plasma and deposited on the wafer surface to form a thin film.In some cases, the deposited film can be treated and improved by techniques such as ultraviolet heat treatment. Ⅵ InterconnectionThe conductivity of semiconductors is between conductors and non-conductors (ie insulators). This characteristic allows us to fully control the current. Through wafer-based lithography, etching and deposition processes, transistors and other components can be constructed, but they also need to be connected to achieve power and signal transmission and reception.Metal is used for circuit interconnection because of its conductivity, which is need to meet the following conditions:✔️Low Resistance: Since the metal circuit needs to pass current, the metal in it should have low resistance.✔️Thermochemical stability: The properties of the metal material must remain unchanged during the metal interconnection process.✔️High Reliability: With the development of integrated circuit technology, even a small amount of metal interconnect materials must have sufficient durability.✔️Manufacturing Cost: Even if the previous three conditions have been met, high cost is not suitable for the mass production.The interconnection process mainly uses two substances, aluminum (Al) and copper (Co).Figure 13. Al and Co Interconnection Process✔️Aluminum Interconnect ProcessThis process starts with aluminum deposition, photoresist application, and exposure and development, removing any excess aluminum and photoresist before entering the oxidation process through etching tech. After the foregoing steps are completed, repeat them until the interconnection is completed.With its excellent electrical conductivity, aluminum is also easy to lithography, etch, and deposit. In addition, it has a lower cost and a better adhesion to the oxide film. The disadvantage is that it is easy to corrode and has a low melting point. In addition, in order to prevent the reaction of aluminum and silicon from causing connection problems, it is also necessary to add a metal deposit to separate the aluminum from the wafer, which is called a "barrier metal."Aluminum circuits are formed by deposition. After the wafer enters the vacuum state, the thin film formed by aluminum particles will adhere to the wafer. This process is called "Vapour Deposition" and includes chemical vapor deposition and physical vapor deposition.✔️Copper Interconnection ProcessWith the improvement of semiconductor process precision and the shrinking of device size, the connection speed and electrical characteristics of aluminum circuits are gradually unable to meet the requirements. For this reason, we need to find new conductors that satisfy the requirements of both size and cost. With its lower resistance, so it can achieve faster connection speed. What’s more, copper is more reliable because it is more resistant to electromigration than aluminum, which is the movement of metal ions that occurs when current flows through the metal.However, copper does not easily form compounds, so it is difficult to vaporize and remove it from the wafer surface. To solve this problem, we no longer etch copper, but the dielectric materials, so that metal circuit patterns composed of trenches and via holes can be formed, and then copper is filled into the aforementioned to help interconnection, which is called "inlaid process".Figure 14. Copper Interconnection BarriersAs the copper atoms continue to diffuse into the dielectric, the insulation of the latter will decrease and produce a barrier layer that prevents the copper atoms from continuing to diffuse. Then a very thin copper seed layer will be formed on the barrier layer. After this step, electroplating can be carried out, that is, the high-aspect-ratio graphics are filled with copper. After filling, the excess copper can be removed by a metal chemical mechanical polishing (CMP) method. After completion, an oxide film can be deposited, and the excess film can be removed by photolithography and etching processes. The full entire process needs to be repeated continuously until the copper interconnection is completed.It can be seen from the above comparison that the difference between the copper interconnection and the aluminum interconnection is that the excess copper is removed by metal CMP instead of etching. Ⅶ TestThe main goal of the test is to check whether the quality of the semiconductor chip meets a certain standard, thereby eliminating defective products and improving the reliability of the chip. In addition, products that are tested and defective will not enter the packaging step, which helps to save cost and time. Electronic die sorting (EDS) is a testing method for wafers.EDS is a process for inspecting the electrical characteristics of each chip in the wafer state and thereby improving the semiconductor yield. EDS can be divided into five steps, as follows:Electrical Die Sorting (EDS)1）EPMTest whether the electrical parameters of transistors, capacitors, diodes and other devices meet the standards.2）Aging TestTest method of applying a certain temperature and AC/DC voltage to the wafer.3）TestPerform temperature, speed and motion tests on the wafer through the probe card.4）RepairReplace the components in the defective wafer and test again.5）InkUse special ink to mark defective chips.1) EPMEPM is the first step in semiconductor chip testing. This step will test every device (including transistors, capacitors, and diodes) that the semiconductor integrated circuit needs to use to ensure that its electrical parameters meet the standards. The measured electrical characteristic data will be used to improve the efficiency of the semiconductor manufacturing process and product performance (not to detect defective products).2) Wafer Aging TestThe semiconductor defect rate comes from two aspects, namely, the rate of manufacturing defects (higher in the early stage) and the rate of defects occurring throughout the life cycle afterwards. Wafer aging test refers to testing the wafer under a certain temperature and AC/DC voltage to find out which products may have defects in the early stage, that is, to improve the reliability of the final product by discovering potential defects.3) Parameters TestTemp TestHigh TemperaturVerify that the chip can work at a temperature that exceeds the maximum temperature by 10% or higher.Low TemperaturVerify that the chip can work at a temperature that lower the minimum temperature by 10% or more.Room TemperaturCheck whether the chip can work at room temperature (25°C).The high and low temperature test requirements for storage semiconductors are 85-90℃ and -5-40℃ respectively.Speed TestCoreCheck whether the core functions are valid.SpeedTest movement speed.Motion TestDCApply direct current to check whether the current and voltage are normal.ACApply alternating current to test movement characteristics.FunctionCheck whether all functions are normal.4) RepairRepairing is the most important test step, because some defective chips can be repaired, and you only need to replace the defective components.5) InkThe chips that failed the electrical test have been sorted out in the previous steps, but they still need to be marked to distinguish them. In the past, we needed to mark defective chips with special inks to ensure that they can be identified with the naked eye. Today, the system automatically sorts them based on the test data values. Ⅷ PackageSquare chips (also called single wafers) of equal size are formed on the wafers processed by the previous several processes. The next thing to do is to obtain individual chips by cutting. The chip that has just been cut is very fragile and cannot exchange electrical signals, so it needs to be processed separately. This process is packaging, including forming a protective shell on the outside of the semiconductor chip and allowing them to exchange electrical signals with the outside. The entire packaging process is divided into five steps, namely wafer sawing, single wafer attachment, interconnection, molding, and packaging testing.1) Wafer SawingTo cut countless densely arranged chips from the wafer, we must first grind the back of the wafer until its thickness can meet the needs of the packaging process. After grinding, we can cut along the scribing line on the wafer until the semiconductor chip is separated.There are three types of wafer sawing techniques: blade cutting, laser cutting and plasma cutting. Blade cutting refers to cutting wafers with diamond blades, which is prone to generate frictional heat and debris and thus damage the wafers. Laser cutting has higher precision and can easily handle wafers with thin thickness or small scribing line pitch. Plasma cutting uses the principle of plasma etching, so even if the scribing line pitch is very small, this technology can also be applied.2) Single Wafer AttachmentAfter all the chips are separated from the wafer, we need to attach the individual chips (single chip) to the substrate (lead frame). The role of the substrate is to protect the semiconductor chips and allow them to exchange electrical signals with external circuits. A liquid or solid tape adhesive can be used to attach the chip.3) BondFigure 15. BondingAfter attaching the chip to the substrate, we also need to connect the contact points of the two to achieve electrical signal exchange. There are two connection methods that can be used in this step: wire bonding using thin metal wires and flip chip bonding using spherical gold or tin blocks. Wire bonding is a traditional method, and flip-chip bonding can speed up semiconductor product manufacturing.4) MoldingFigure 16. MoldingAfter completing the connection of the semiconductor chip, it is necessary to use a molding process to add a package to the outside of the chip to protect the semiconductor integrated circuit from external conditions such as temperature and humidity. After the packaging mold is made as required, we put the semiconductor chip and the epoxy molding compound (EMC) into the mold and seal it. The sealed chip is in its final product.5) Package TestThe chip that has the final form must pass the final defect test. All that enters the final test is the finished semiconductor chip. They will be put into the test equipment, set different conditions such as voltage, temperature and humidity, etc. for electrical, functional and speed tests. The results of these tests can be used to find defects, improve product quality and production efficiency. Frequently Asked Questions about Semiconductor Manufacturing Steps1. What is a semiconductor and how is it made?Semiconductors are made from materials that have free electrons in their structure that can move easily between atoms, which aids the flow of electricity. ... Silicon has four electrons in its outer orbital, which allows the covalent bonds to form a lattice and thus form a crystal. 2. How many steps are in a manufacturing semiconductor?In semiconductor device fabrication, the various processing steps fall into four general categories: deposition, removal, patterning, and modification of electrical properties. 3. How is semiconductor manufactured?In the manufacturing process of IC, electronic circuits with components such as transistors are formed on the surface of a silicon crystal wafer. A thin film layer that will form the wiring, transistors and other components is deposited on the wafer (deposition). The thin film is coated with photoresist. 4. What type of operation is semiconductor processing?In semiconductor device fabrication, the various processing steps fall into four general categories: Deposition, Removal, Patterning, and Modification of electrical properties. Deposition is any process that grows, coats, or otherwise transfers a material onto the wafer. 5. What chemicals are used in semiconductor manufacturing?Semiconductors chemstry is mainly organized around the chemical treatment by solvents and acido-basic attacks of semiconductors. Chemistry of solvents : the main chemicals used during this stage are trichloroethylene, acetone, isopropanol and also other alcohols such as denatured ethanol.

IntroductionA p-n junction is an interface or a boundary between n-type and p-type semiconductor materials, inside a semiconductor. One of the crucial keys to solid state electronics is the nature of the P-N junction. For example, a PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. And the p-side or the positive side of the semiconductor has an excess of holes and the n-side or the negative side has an excess of electrons. Why pn junction exists? and How does it work? What is p-n junction diode?PN Junction IntroductionCatalogIntroductionIntroductionⅠ PN Junction Basic1.1 PN Semiconductor1.2 PN Junction ReviewⅡ PN Junction Characteristic2.1 Unidirectional Conductivity2.2 Reverse Breakdown2.3 Volt-Ampere Characteristic2.4 Capacitance CharacteristicⅢ Typical Example: Transistor PN JunctionⅠ PN Junction Basic1.1 PN SemiconductorN-type SemiconductorIn silicon crystal (or germanium crystal) doped with a small amount of impurity phosphorus element (or antimony element), since semiconductor atoms (such as silicon atoms) are replaced by impurity atoms, among the five outer electrons in the outer layer of phosphorus atoms four of them form covalent bonds with the surrounding atoms, and the extra electron is almost unbound and becomes a free electron more easily. Therefore, the N-type semiconductor has become a semiconductor with a higher concentration of electrons, and its conductivity is mainly due to the conduction of free electrons.P-type SemiconductorIn silicon crystal (or germanium crystal) doped with a small amount of impurity boron element (or indium element), since semiconductor atoms (such as silicon atoms) are replaced by impurity atoms, the three outer electrons in the outer layer of boron atoms and a semiconductor atom form a covalent bond, at this time, a "hole" is generated. This hole may attract bound electrons to "fill", making the boron atom a negatively charged ion. In this way, this type of semiconductor has a higher concentration of "holes" ("corresponding to" positive charges) and becomes a substance capable of conducting electricity.1.2 PN Junction ReviewP-N junction is formed by joining n-type and p-type semiconductor materials, which is a two terminal device that allows electric current in one direction and blocks electric current in another direction.Figure 1. How is PN Junction FormedOn a silicon wafer, different doping processes are used to form an N-type semiconductor on one side and a P-type semiconductor on the other side. We call the area near the interface of the two semiconductors a PN junction.After the P-type semiconductor and the N-type semiconductor are combined, since the free electrons in the N-type region are more and the holes are less, the concentration difference between electrons and holes appears at their junction. Due to the difference in the concentration of free electrons and holes, some electrons will diffuse from the N-type region to the P-type region, and some holes will diffuse from the P-type region to the N-type region. As a result of their diffusion, the P region loses holes, leaving negatively charged impurity ions, and the N region loses electrons, leaving positively charged impurity ions. The ions in the semiconductor cannot move arbitrarily in an open circuit, so they do not participate in conduction. These immovable charged particles form a space charge zone near the interface between the P and N zones. The thickness of the space charge zone is related to the concentration of dopants.After the space charge region is formed, due to the interaction between the positive and negative charges, an internal electric field is formed in the space charge region, the direction of which is from the positively charged N region to the negatively charged P region. Obviously, the direction of this electric field is opposite to the direction of carrier diffusion, which used to prevent diffusion.On the other hand, this electric field will cause the minority carrier holes in the N region to drift to the P region, and the minority carrier electrons in the P region to drift to the N region. The direction of the drift movement is just opposite to the diffusion movement. The holes drifting from the N region to the P region supplement the holes lost in the P region on the original interface, and the electrons drifting from the P region to the N region supplement the electrons lost in the N region on the original interface, which makes the electric charge is reduced and the internal electric field is weakened. Therefore, the result of drift motion is to narrow the space charge region and strengthen the diffusion motion.Finally, the diffusion of multiple carriers and the drift of minority carriers reach a dynamic balance. On both sides of the junction surface of the P-type semiconductor and the N-type semiconductor, a thin ion layer is left. The charge area formed by this thin ion layer is called a PN junction. The direction of the internal electric field of the PN junction points from the N to the P. It is also called the depletion layer, because lack of electrons.Figure 2. PN Junction Depletion RegionⅡ PN Junction Characteristic2.1 Unidirectional Conductivity(1) The PN junction is turned on when the forward voltage is applied.If the positive pole of the power supply is connected to the P area and the negative pole is connected to the N area, a part of the applied forward voltage is in the PN junction area, at this time, the PN junction is in a forward bias. The current flows from the P to the N, and the holes and electrons move to the interface, which narrows the space charge area. In addition, the current can pass smoothly. Its direction is opposite to the direction of the electric field in the PN junction, which weakens the internal electric field. As a result, the resistance of the internal electric field to the diffusion movement of the multitons weakens, and the diffusion current increases. The diffusion current is much larger than the drift current, and the influence of the drift current can be ignored, and the PN junction is in low resistance.(2) PN junction is cut off when reverse voltage is applied.If the positive pole of the power supply is connected to the N zone, the negative pole is connected to the P zone, and a part of the applied reverse voltage applies in the PN junction zone, and it is in reverse bias. Then the holes and electrons move away from the interface, which widens the space charge area, and the current cannot flow. The direction is the same as the direction of the electric field in the PN junction, which strengthens the internal electric field. The resistance of the internal electric field to the multiton diffusion movement is enhanced, and the diffusion current is greatly reduced. At this time, the drift current formed by the minority carriers in the PN junction region under the action of the internal electric field is greater than the diffusion current. The diffusion current can be ignored, and the PN junction exhibits high resistance.2.2 Reverse BreakdownWhen a reverse voltage is applied to the PN junction, the space charge region becomes wider and the electric field in the region strengthens. When the reverse voltage increases to a certain level, the reverse current will suddenly increase. If the external circuit cannot limit the current, the current will be so large that it will burn the PN junction. At this time, it is called the breakdown voltage. There are two basic breakdown ways, namely tunnel breakdown (also called Zener breakdown) and avalanche breakdown. The former has a breakdown voltage of less than 6V and has a negative temperature coefficient, and the latter has a breakdown voltage of greater than 6V and a positive temperature coefficient.2.3 Volt-Ampere CharacteristicThe volt-ampere characteristics of the PN junction are shown in the Figure 3, which visually shows the unidirectional conductivity.Figure 3. Volt-Ampere Curve of the PN JunctionThe volt-ampere characteristic shows by Where iD is the current passing through the PN junction, VD is the applied voltage at both ends of the PN junction, and VT is the voltage equivalent of temperature.2.4 Capacitance CharacteristicWhen a reverse voltage is applied to the PN junction, the positive and negative charges in the space charge region constitute a capacitive device. Its capacitance changes with the applied voltage, mainly including barrier capacitance (CB) and diffusion capacitance (CD). Both of them are non-linear capacitors. Ⅲ Typical Example: Transistor PN JunctionTransistors are one of the basic building blocks of modern electronics. In the diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material to form a simple pn-junction. While the transistor is a three terminal solid state device which is formed by connecting two diodes back to back. Hence it has got two PN junctions.Transistor NPN-Type and PNP-Type JunctionsTransistor Working StateThe transistor works like an electronic switch. It can turn a current ON and OFF. The basic idea behind a transistor is that it lets you control the flow of current through one channel by varying the intensity of a much smaller current that's flowing through a second channel.1) Cut-off State (C): The base current is zero.2) Amplified State (A): The transmitter junction is forward biased (that is, the voltage direction is P->N), and the collector junction is reverse biased.3) Saturation State (S): Both the emitter junction and the collector junction are forward biased.Working StateNPN-Type TransistorPNP-Type TransistorVb<Ve (C)Vc>Vb>Ve (A)Vb>Ve Vb>Vc (S)Vb>Ve (C)Vc<Vb<Ve (A)Vb<Ve Vb<Vc (S)In Figure (a), when there is no voltage input at b of the NPN transistor, no current flows between c and e, and the triode is in the cut-off state.In Figure (b), when a positive voltage is input to b of the NPN transistor, the negative electrons in the N region of e are attracted by the positrons of P region in b. Due to the effect of the power plant, and they rush (diffuse) to the base region, however, only part of the negative electrons collide with the positive electrons (recombination) to generate the base current, and the other part of the negative electrons gather near the collector junction. The negative electrons gathered in the collector junction pass through (drift) the collector junction due to the action of the electric field. After reaching the collector area, it collides with the positrons gathered in c (N-type semiconductor terminal) to generate a collector current.It can be seen from this that the greater the base current, the greater the collector current. That is, when a small current is input to the collector, a large current can be obtained by the collector, and now the transistor is in an amplified state.It should be noted that when the base current reaches a certain level, the collector current no longer rises. At this time, the transistor loses its current amplification effect, and the voltage between the collector and the emitter is very small. The collector and emitter are equivalent to the on-state of the switch. At this moment, the transistor is in a saturated state.The working principle of the PNP transistor is the same as that of the NPN transistor, except that the direction of the bias voltage and the current are opposite, and the roles of electrons and holes are reversed. The PNP transistor uses Veb to control the positrons incident on the collector area from the emitter area through the base area, while the NPN transistor uses Vbe to control the negative electrons that enter the collector area from the emitter area through the base area.In addition, in a low-power design, the transistor control circuit will have a certain impact on the circuit. No matter it is NPN or PNP, there will be leakage current in the PN junction of the transistor. When the I/O controls the base voltage, in order to stabilize the base voltage, a pull-down resistor is generally added to the base of the NPN switch circuit. In the design of the PNP switch circuit, a pull-down resistor is added to the base. The pull-up and pull-down resistors are selected according to the control chip, transistor and circuit voltage. Frequently Asked Questions about PN Junctions Formed1. What is PN junction and how it is formed?P-n junctions are formed by joining n-type and p-type semiconductor materials, as shown below. ... However, in a p-n junction, when the electrons and holes move to the other side of the junction, they leave behind exposed charges on dopant atom sites, which are fixed in the crystal lattice and are unable to move. 2. What is p-type and n-type?In silicon doping, there are two types of impurities: n-type and p-type. In n-type doping, arsenic or phosphorus is added in small quantities to the silicon. ... In p-type doping, boron or gallium is used as the dopant. These elements each have three electrons in their outer orbitals. 3. What is a PN junction diode?A PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. ... By applying a negative voltage (reverse bias) results in the free charges being pulled away from the junction resulting in the depletion layer width being increased. 4. What happens in a PN junction?A forward-biased PN junction conducts a current once the barrier voltage is overcome. The external applied potential forces majority carriers toward the junction where recombination takes place, allowing current flow. A reverse-biased PN junction conducts almost no current. 5. What is a PN junction used for?A p-n junction diode is a two terminal device that allows electric current in one direction and blocks electric current in another direction. In forward bias condition, the diode allows electric current whereas in reverse bias condition, the diode does not allow electric current.

IntroductionIC packaging refers to the material that contains a semiconductor device. The package is a case that surrounds the circuit material to protect it from corrosion or physical damage and allow mounting of the electrical contacts connecting it to the printed circuit board (PCB). Let's take a look at some of the different types of packaging options you can use to enhance your product & customer experience.CatalogIntroductionⅠ How Do You Find the Right IC Packages?Ⅱ What are IC Made Up of?Ⅲ How Many Types of IC Packages Are There?3.1Through-hole Technology (THT)3.2 Surface-mount Technology (SMT)3.3 Through-Hole vs Surface MountⅣ IC Packages Selection SummaryⅠ How Do You Find the Right IC Packages?There was a lot of change in the way electronics components appeared or packaged, from bulky vacuum tubes to lightweight SMD ICs. Because IC packaging indicates the dimension and shape of a chip, to minimize the number of components on board, manufacturers are actively working to reduce the size of ICs, and multiple components are also being increasingly incorporated into LSI, VLSI, and ULSI designs. Almost all components are currently available in two or three different package forms, from which the engineer can pick the one that best fits device application. We will learn about the various IC package forms in this article and where they can be useful.Types of IC | IC Package Types ExplainedⅡ What are IC Made Up of?Before introducing the various forms of IC packages, we can learn about the process of IC manufacturing firstly. ICs consist of monolithic, hybrid, or film circuits, as a matter of fact. The development steps for the IC are as follows:LithographyIt is a technique for defining a pattern in which a photoresist material is added to the wafer surface evenly and then baked to harden. Later, light is projected and selectively extracted via a reticulum containing mask details.EtchingThe undesired materials are separated from the wafer surface.DepositionMaterials are added to the wafer through the process of Physical Vapor deposition and chemical vapor deposition.Chemical Mechanical PolishingA planarization technique by the application to the wafer surface of a chemical slurry with etchant agents.OxidationOxygen (dry oxidation) or HO (wet oxidation) molecules convert silicon layers to silicon dioxide on top of the wafer in the oxidation process.Ion implantationThe most commonly used method for the semiconductor incorporation of dopant impurities. The ionized particles are accelerated and targeted at the semiconductor wafer via an electrical field.DiffusionFor annealing bombardment-induced lattice defects, a diffusion phase following ion implantation is used.IC Design & Manufacturing Process OverviewⅢ How Many Types of IC Packages Are There?A very huge variety of integrated circuits have different packaging requirements. Based on how they are placed on a circuit board, the packages are divided into two types.3.1Through-hole Technology (THT)Through-hole MountingThey are designed to trap the lead pins on one side of the board and smolder on the other side. Compared to other forms, they are larger in scale. These are mainly used in electronic equipment to compensate for the limitations of board space and expense. One example of through-hole mount packages is dual inline packages.DIP and ZIPThrough-hole mount packages come in ceramic and plastic forms to add up to the classification.The most widely used IC packages are Dual Inline Packages (DIP). As in 28-pin ATmega328, the pins are positioned parallel to each other, extending perpendicularly and laid out on a rectangular black plastic housing. The pins are 0.1 inches apart. Additionally, because of the variation in the number of pins in various packages, the box differs in size. They range in number from 4 to 64. These pins are positioned in a way that they can be changed without short-circuiting each other or even smoldering into PCBs at the center of a breadboard.The few common types are Plastic Dual In-Line Package (PDIP) and Molded Dual In-Line Package (MDIP). There are several types of DIP packages. It can further be categorized as:Norm - The most prevalent packaging is this. The pins are spaced apart by 0.1". Skinny - The space between the terminal rows in this box is 7.62mm.Shrink - Identical to the regular ones, but 1.778 mm is the lead pitch. Smaller in size, they use packaging with high pin density.Zig-Zag in Line Packages (ZIP)- Pins are inserted perpendicular to the circuit board in this kind of package. In the box, these pins are aligned perpendicularly and are closer to each other. This style of packaging was short-lived and was primarily used in RAM chips that were dynamic. CER-DIP comprises other types of through-holed packages in which the lead pitch is 2.54 mm and the body is molded with ceramics. Also, glass is the sealing medium used here. The lead pitch of the Pin Grid Array (PGA) is 2.54 mm and the body is made of ceramic. The pins from the body are arranged vertically and can be positioned on a grid. Typically, this one fits a multi-pin kit.3.2 Surface-mount Technology (SMT)Surface Mount DefinitionThe technology of installing or positioning the components directly onto the printed circuit board surface is accompanied by surface mount packaging. While this manufacturing process helps to rapidly do stuff, it also raises the likelihood of defects. This is due to component miniaturization and also because they are placed very close to each other. This, in fact, results in the detection of the deficiency in the entire process becoming extremely significant. Again, ceramic or plastic molding is often used in Surface Mount packaging.Types of SMTThe following are the various types of surface mount packages that use plastic molds:(1) Small Outline L-leaded PackageThis type has leads of the gull-wing type that draw in a L fashion from the body in either direction and can be placed directly on the frame. QFP (Quad Flat L-leaded Packages)-These are SOP-like. The only difference, however, is that the leads are drawn out in 4 directions instead of 2 and are directly placed on the frame. They even come with a heat sink and a heat spreader built in.(2) Ball Grid Array (BGA)A ball grid array (BGA) is a type of surface-mount packaging (a chip carrier) used for integrated circuits. BGA packages are used to permanently mount devices such as microprocessors. A BGA can provide more interconnection pins than can be put on a dual in-line or flat package. As for BGA soldering, the solder balls on the package have a very carefully controlled amount of solder, and when heated in the soldering process, the solder melts. Surface tension causes the molten solder to hold the package in the correct alignment with the circuit board, while the solder cools and solidifies.3.3 Through-Hole vs Surface MountThe two kinds of packaging have their individual advantages and disadvantages - primarily through-hole mounting and surface mounting. Here's a comparison with different variables between through-hole and surface mount devices that adjust the need for the form of IC packages.1. Size - In contrast with through-hole packages, surface mount packages are smaller.2. Component density - Component density as well as attachment density are comparatively higher for surface mounting packages.3. Assembly- In contrast to through-hole packages that can not afford even the smallest of errors when making holes, minor errors are immediately corrected by the molten solders that bring components close together due to stress in surface mounting packages. This is because, once made, the alignment can not be changed.4. Electromagnetic compatibility - The ability of various electronic devices and components, even in the presence of other devices that produce electromagnetic waves, to operate correctly. Packages for surface mounting have better EMC performance.5. Cost - Because of automated processes, the manufacturing cost is often lower than that of through-hole packages.Surface mount packages do not, however, operate together with a simple plugin on the breadboard. They need a pin-led carrier to be installed. Or worse, they can need special PCBs customized separately for various prototypes.Ⅳ IC Packages Selection SummaryICs are put into protective packages to allow easy handling and assembly onto PCBs and to protect the devices from damage. Therefore, a suitable package type is important for ic applications. First of all, let us emphasize enough how important it is to have good packaging. To allow smooth handling and installation on the printed circuit boards, integrated circuits are placed into packages. To prevent any kind of harm and corrosion, it is extremely imperative to bring ICs into packages. The packages also assist in the dissipation of the heat generated. This is, however, the final part of the entire fabrication process. Consider certain important factors, such as assembly capacity, strength, cost, and connectivity, before deciding on the type of packaging that best suits you.With the ever-present innovations, several kinds of semiconductor integrated circuits packages have appeared. The motive is to choose for yourself the correct type of IC package that is affordable and yet does not compromise with efficiency. Most important thing, chips with the same electronic parameters may have different package types. Frequently Asked Questions about Types of IC Packages1. What is IC package design?IC packaging refers to the material that contains a semiconductor device. The package is a case that surrounds the circuit material to protect it from corrosion or physical damage and allow mounting of the electrical contacts connecting it to the printed circuit board (PCB). 2. What are the different types of IC packages?DIP (Double In-line Package)SOP/SOIC/SO (Small Outline Package)QFP (Quad Flat Package)QFN/LCC (Quad Flat Non-leaded Package)BGA (Ball Grid Array Package)CSP (Chip Scale Package) 3. What is the most common type of digital IC package?DIP (Dual in-line packages)DIP, short for dual in-line package, is the most common through-hole IC package you'll encounter. These little chips have two parallel rows of pins extending perpendicularly out of a rectangular, black, plastic housing. 4. How many types of IC are there?TwoThere are two main types of integrated circuits: digital ICs or analog ICs. 5. What are the types of packaging materials?Different Types of Packaging Materials1) Plastic. The most common packaging methods in industries is plastic.2) Aluminum. Aluminum is widely used for products such as sodas, beer, canned goods and animal foods.3) Cardboard. Most products that are packaged in cardboard boxes are first wrapped in another type of packaging such as bubble wrap or foam.4) Glass5) Foam

CatalogⅠ IntroductionⅡ The Layout of the Car MarketⅢ The Layout in the Industrial FieldⅣ The Layout on the Internet of ThingsⅤ ConclusionⅠ IntroductionON Semiconductor: In 2021, it will focus on the automotive, industrial and cloud power, and the Internet of Things marketThe end of the year and the beginning of the year is often a time for companies to make summaries and outlook, and the semiconductor industry is no exception. Not long ago, ON Semiconductor also made a year-end review of 2020 and revealed to the media what ON Semiconductor plans to do in 2021. "The year 2020 is a year of surprises for everyone. People around the world are experiencing the worst epidemic in a century. The good news is that the epidemic has eased in some parts of the world. Looking forward to 2021, we hope to get out of the epidemic as soon as possible and have a more favorable business environment." DavidSomo, senior vice president of strategy, marketing and solution engineering at ON Semiconductor, said in his opening remarks at the press conference.Due to the epidemic, the global economic situation in 2020 is not optimistic. According to Bloomberg data, GDP growth in 2020 is expected to drop from 2.8 percent in 2019 to minus 3.7 percent. China will be the only major economy in the world with positive growth by 2020, while all other economies are expected to suffer single-digit declines. Fortunately, in the second half of 2020, the global economy began to recover. As indicated by the PMI (Purchasing Managers' Index), manufacturing activity in all major economies resumed growth in the second half of the year, with the only exception being Japan, which also showed a positive trend. DavidSomo expressed an optimistic outlook for the global economy in 2021. "We expect that the economic outlook for next year will be positive, significantly better than this year, and there is a consensus for overall GDP growth of around 5% in 2021," he said. He also stressed that, for its part, ON Semiconductor wants to be a reliable supplier of power, analog, sensor and connection solutions, enabling innovation in energy-efficient electronics. It will focus on providing comprehensive solutions to global customers in the automotive, industrial and cloud power markets, as well as the Internet of Things market. Ⅱ The Layout of the Car MarketIn the automotive sector, ON Semiconductor implements a comprehensive sensor product and solution layout, including image sensors, radar, lidar, ultrasonic sensors and other products and solutions. In additon to sensors, R&D resources continue to be invested in silicon and silicon carbide power semiconductors, as well as LED lighting and automotive power management products. Those investments have also paid off handsomely, accounting for 33% of ON Semiconductor's $5.5 billion in 2019 revenue. DavidSomo pointed out that in the future, ON Semiconductor will continue to develop new products in the automotive market and increase investment in research and development. "On the automotive side, we will push forward research and development around sensors, autonomous driving-related applications, new energy vehicles, and the electrification of vehicles." He revealed. ON Semiconductor is one of the top 10 semiconductor suppliers in the automotive industry. DavidSomo proudly states, "Since entering the automotive market in 2010, ON Semiconductor has shipped 130 billion chips to automotive customers by 2019. In 2019, there were more than 230 ON Semiconductor devices used in every vehicle produced worldwide."The company has set the industry standard for automotive image sensors, with more than 120 million of them shipped to Advanced Driver Assistance System (ADAS) applications. Over the past 13 years, more than 400 million ON Semiconductor automotive image sensors have been used in vehicles on the road. ON Semiconductor has developed a complete portfolio of product solutions and sensor modes to support L4 and L5 autonomous vehicles, including ultrasonic sensor interfaces, image sensors, solid-state LIDAR and millimeter-wave radar technologies. DavidSomo said that ON Semiconductor's MMW technology, acquired from IBM Research Group in Sea Law (IBM), has been used in communications and fiber optics, and plans to use the technology in the automotive sector. It is currently being tested with customers for prototypes but has not yet been used in commercial automotive production. In the case of LiDAR, the technology came from the acquisition of sensL to acquire technology on solid-state LiDAR. According to DavidSomo, sensL was originally designed for use in the medical market but is now being developed for use in the automotive market. "Multiple customers have incorporated our Silicon Photomultiplier (SiPM) and Single-Photon Avalanche Diode (SPAD) technologies into solid-state lidar systems, enabling commercial lidar applications in the automotive industry for L2+ and L3 level autonomous driving safety applications." He went on to point it out. On the cost side, DavidSomo says that because ON Semiconductor's lidar solution is a solid-state solution, it has been able to bring the cost of lidar down from more than $1,000 for mechanical rotation in the past to the current $500 range for solid-state solutions. In terms of image sensors, over the years, ON Semiconductor has made three acquisitions, including Aptina, Cypress's image sensor technology and TrueSense, to enrich its image sensor portfolio.Ⅲ The Layout in the Industrial FieldDavidSomo said that ON Semiconductor offers a wide range of power and automation solutions in the industrial and cloud power markets that support different application scenarios. In terms of power semiconductors, in 2018, ON Semiconductor ranked second behind Infineon with a market share of about 9 percent, according to IHS. As an example, he pointed out that powering the cloud requires several processes, including generation, power supply and power demand management. "In these processes, we have a complete silicon and silicon carbide technology portfolio that supports power generation, transmission and distribution, as well as power and demand management for data centers and 5G base stations." He points it out. In terms of energy efficiency improvement, the use of ON Semiconductor's cloud power solution increased energy efficiency by about 0.5%. In a typical VL data center, the savings over the life of the system are estimated at approximately $38 million. The energy efficiency improvement is only 0.5%, which may not sound like much, but when measured at the system-wide level of deployment, the savings over the lifetime of the system are significant. The development of energy infrastructure is also unstoppable, as a society and the government further promote the development of new energy sources and shift more from coal-fired power generation to renewable energy sources such as wind and solar power. In order to save energy and reduce emissions, reduce air pollution, from fuel vehicles to new energy vehicles, which has generated the demand for electric vehicle charging pile, and ON Semiconductor silicon and silicon carbide power discrete devices and modules, can support the construction of electric vehicle charging pile. Similarly, its power technologies, such as solar inverters used in solar panels, enable clean energy generation, and "ON Semiconductor is fortunate to partner with customers in China to develop applications in these areas." DavidSomo said. Manufacturing is also one of the biggest users of energy. In the United States, our power solutions are used in plant motor drive systems, resulting in savings of more than $350 million per year. If applied globally, the potential savings could reach approximately $5.8 billion per year, resulting in energy efficiency improvements in manufacturing motor drive systems.Ⅳ The Layout on the Internet of ThingsIn the Internet of Things (IoT) area, ON Semiconductor has a complete set of key components and modules that enable devices to be connected, intelligent, aware and actuated in their operating environment."Of course, we recognize that our semiconductor components are not sufficient to build the end-to-end connected Internet of Things (IoT) systems that our customers need, so we are investing more to accelerate development and provide our customers with a number of development tools to enable faster application development and market deployment." DavidSomo admits. While ON Semiconductor can provide many of the key building blocks, DavidSomo believes it is important to work with partners in the Internet of Things (IoT) ecosystem to build IoT solutions for secure end-to-end connectivity. As shown in the figure below, ON Semiconductor works with a number of technology partners to enhance the performance of IoT devices developed by clients, as well as with infrastructure providers such as cloud service providers to enable edge devices to connect securely and stably to the cloud. He also revealed that the company is focusing on three vertical areas in the Internet of Things, namely asset tracking and monitoring, connected lighting, and smart homes and building automation.Ⅴ ConclusionIn conclusion, DavidSomo said that in the process of semiconductor device manufacturing, ON Semiconductor also recognizes the growing need to provide its customers with complete system solutions that add value. As a result, ON Semiconductor offers modular products for power components and built-in controls, as well as reference design kits to speed up customer product development. ON Semiconductor also provides software and design tools to help customers complete designs faster and get their equipment to market faster. He also stressed that ON Semiconductor will focus on research and development, and is committed to developing innovative products and solutions including power, simulation, sensors and connectivity solutions. "Through both endogenous growth and exogenous acquistions, we are further enhancing our capabilities to support the applications our customers are developing, while also building our professional application capabilities to help them develop products better and faster to market."

Ⅰ Working Principle1.1 TerminologyA diode is a two-terminal electronic device characterized by unidirectional conductivity—it allows current to flow easily in one direction but severely restricts current from flowing in the opposite direction. Historically, diodes are divided into vacuum tube diodes (formerly called electron diodes) and semiconductor diodes (crystalline diodes). Due to the high heat loss, large size, and lower efficiency of vacuum tubes, semiconductor diodes are the standard in modern electronics.The fundamental principle of a modern diode relies on the PN junction. Adding leads and a protective package to this PN junction creates the discrete component we know as a diode.A semiconductor diode consists of a PN junction formed by joining a P-type semiconductor and an N-type semiconductor. A depletion region (space charge layer) forms at the interface, creating a self-built electric field. In the absence of applied voltage, the diffusion current (caused by the difference in carrier concentration) and the drift current (caused by the internal electric field) balance each other out, resulting in a state of electrical equilibrium.Forward Bias: When a forward voltage is applied, the external electric field opposes the self-built field. This lowers the barrier, causing the diffusion current of carriers to increase significantly, resulting in a forward current (conduction).Reverse Bias: When a reverse voltage is applied, the external field reinforces the self-built field. This widens the depletion region and prevents majority carriers from crossing. Only a tiny "reverse saturation current" flows (leakage), which remains roughly constant over a specific voltage range.Breakdown: When the reverse voltage exceeds a critical threshold, the electric field strength in the depletion layer becomes high enough to trigger a multiplication of carriers. This generates a large number of electron-hole pairs, causing a sharp increase in reverse current. This is known as the breakdown phenomenon. It is worth noting that reverse breakdown is categorized into two types: Zener breakdown (in highly doped junctions at lower voltages) and Avalanche breakdown (at higher voltages). Figure 1. P-type Semiconductor and N-type Semiconductor 1.2 PN JunctionA PN junction is the boundary interface between two types of semiconductor materials: P-type and N-type. The "P" (Positive) region contains an excess of holes, while the "N" (Negative) region contains an excess of free electrons. Due to the concentration gradient, free electrons from the N region diffuse into the P region, and holes from the P region diffuse into the N region. This movement creates the depletion region at the junction.Metal leads are connected to these regions to form terminals: the lead connected to the P-region is the Anode (positive pole), and the lead connected to the N-region is the Cathode (negative pole).1.2.1 Doping PrincipleP-type formation: Intrinsic semiconductors (pure silicon) are doped with trivalent impurities (Group III elements), such as Boron. A Boron atom has only three valence electrons. When it forms covalent bonds with surrounding silicon atoms (which have four electrons), a "hole" (a lack of an electron) is created in the lattice. This hole can accept an electron, effectively making the Boron atom a static negative ion. In P-type material, holes are the majority carriers.N-type formation: Similarly, when intrinsic silicon is doped with pentavalent impurities (Group V elements), such as Phosphorus, the impurity atoms form covalent bonds with silicon. Since Phosphorus has five valence electrons, one excess electron is left free to move. In N-type material, free electrons are the majority carriers. Figure 2. PN Junction StructureWhen these two regions meet, the diffusion of electrons and holes across the boundary disrupts the electrical neutrality near the junction, creating an electric field that eventually stops further diffusion, establishing equilibrium.1.2.2 Feature: Unidirectional ConductivityWhen forward voltage is applied (Anode positive, Cathode negative), the external field pushes holes and electrons toward the junction. This narrows the depletion region and neutralizes the internal electric field. Once the voltage exceeds the threshold voltage (typically ~0.7V for Silicon, ~0.3V for Germanium), the diode conducts current with very low resistance.1.2.3 Supplementary NoteForward Bias: Current flows easily; the diode acts like a closed switch (low impedance).Reverse Bias: Current is blocked; the diode acts like an open switch (high impedance). Ⅱ Diode ApplicationsDiodes are ubiquitous in electronics. From simple power conversion to complex signal processing, they protect circuits, regulate voltage, and enable logic functions. Understanding the diode is the first step to mastering electronics.Function of a Diode in Circuit Design2.1 Main FunctionsDiodes serve four primary roles in modern circuitry:(1) Switching Circuit (Current Steering)In digital logic and computing, diodes utilize their unidirectional conductivity to act as automatic switches. They ensure current flows only when specific conditions are met (like in AND/OR logic gates). Switching diodes (like the 1N4148) are optimized for speed, offering much faster response times than mechanical switches and preventing damage from reverse currents.(2) Limiter/Clipper Circuit (Signal Control)Limiter circuits (or clippers) use diodes to restrict the voltage amplitude of a signal. By placing diodes in parallel with the signal path, any voltage exceeding the diode's forward drop (plus any series reference voltage) is shunted to ground. This is essential for protecting sensitive inputs on microcontrollers or audio equipment from signal spikes.(3) Regulator Circuit (Voltage Stabilization)Zener diodes are the key component here. Unlike standard diodes, Zeners are designed to operate in the reverse breakdown region reliably. If the voltage across a Zener exceeds its "Zener Voltage" (Vz), it conducts heavily, clamping the voltage at that level. This makes them perfect for creating simple voltage references or low-power regulators.(4) Varactor Circuit (Tuning and Frequency Control)Varactor diodes (or Varicaps) act as voltage-controlled capacitors. When reverse-biased, the width of the depletion layer changes with voltage, which changes the junction capacitance. These are widely used in Voltage Controlled Oscillators (VCOs) for tuning radios, TVs, and mobile phones, as well as in frequency modulation (FM) circuits. 2.2 Typical Diode ApplicationsLight-emitting diode (LED)Figure 3. Light-emitting DiodeLEDs emit light when electrons recombine with holes at the PN junction, releasing energy in the form of photons. They have revolutionized lighting due to their safety, high efficiency, durability, and fast response time.Key Applications:1. Consumer Electronics: Backlights for LCD TVs, computer monitors, and smartphone screens.2. Automotive: Used in headlights, brake lights, and turn signals. Their fast switching speed improves safety (brake lights trigger faster than incandescent bulbs), and their longevity reduces maintenance.3. Industrial & Mining: Due to their robustness and efficiency, LEDs are replacing traditional lamps in harsh environments like underground mining.4. Urban Lighting: Replacing high-voltage, fragile neon tubes with LED strips for signage and architectural lighting reduces energy costs and fire risks.Zener diodeZener diodes maintain a constant voltage across their terminals when reverse-biased, even as current fluctuates. They are categorized by their breakdown voltage (e.g., 3.3V, 5.1V, 12V). They can be connected in series to achieve higher regulated voltages. Figure 4. Zener Diode CircuitRectifier diodeRectifier diodes allow current to flow only in one direction, converting Alternating Current (AC) into pulsating Direct Current (DC). This is the fundamental component of power supplies. Figure 5. Full Wave Rectifier CircuitLow Frequency (Mains): For standard 50Hz/60Hz rectification, the 1N400x or 1N540x series are standard. Key parameters are Maximum Rectified Current (Io) and Peak Inverse Voltage (PIV).High Frequency: In Switching Mode Power Supplies (SMPS), standard rectifiers are too slow. Fast Recovery Diodes (FRD) or Schottky diodes are required to handle high switching frequencies efficiently.Detector diodeDetector diodes (often Germanium or Schottky point-contact diodes) possess high detection efficiency and low junction capacitance. They are used to demodulate Amplitude Modulated (AM) signals in radios, extracting the audio signal from the carrier wave.  Figure 6. Detector Diode CircuitSchottky diodeA Schottky diode uses a metal-semiconductor junction rather than a P-N junction. This gives it two distinct advantages: 1. Low Forward Voltage Drop: Typically 0.15V to 0.45V (compared to 0.7V for Silicon), which reduces power loss and heat. 2. High Speed: Zero reverse recovery time makes them ideal for high-frequency switching power supplies, inverters, and motor drivers.Switching diodeDesigned specifically for rapid on/off operations. In the circuit below, VD1 acts as a switch to control the charging path of capacitor C2. Figure 7. Switching Diode CircuitFast recovery diode (FRD)FRDs are PN junction diodes doped to have a significantly reduced Reverse Recovery Time (trr). While a standard rectifier might take microseconds to stop conducting when voltage reverses, an FRD stops in nanoseconds. This is critical in modern power electronics like inverters and PWM controllers to prevent short-circuit currents. Update for 2025: In high-power applications, Silicon Carbide (SiC) diodes are increasingly replacing traditional silicon FRDs due to their ability to handle higher voltages and temperatures with almost zero switching loss.Transient voltage suppressor (TVS)Transient Voltage Suppressors (TVS) are specialized avalanche diodes designed to absorb high-energy spikes. They are the primary defense against ESD (Electrostatic Discharge) and voltage surges in sensitive electronics. Figure 8. Diode Circuit Symbols Ⅲ One Question Related to Diode Functions and Going Further3.1 QuestionWhy do we use diodes in a circuit?3.2 AnswerThe primary function is to serve as an electronic "check valve" or "one-way street" for electricity. This enables: 1. Rectification: Converting AC power (wall outlet) to DC power (batteries/electronics). 2. Protection: Blocking reverse polarity (if you put a battery in backward) or clamping high-voltage spikes (TVS). 3. Signal Manipulation: Demodulating radio signals or creating logic gates. 4. Reference: Providing a stable voltage reference (Zener). Ⅳ Diode Distributors RecommendationWhether you are sourcing standard rectifiers or advanced SiC power diodes, reliability is key. Here are some recommended sources for diode components:Mouser Electronics (Global Distributor)onsemi (Leading Manufacturer)KYNIX Semiconductor (Electronic Component Distributor)Digi-Key Electronics (Global Distributor) Frequently Asked Questions about Diode Function1. What is a diode used for?Its most common function is to allow electric current to pass in one direction (forward direction) while blocking it in the opposite direction (reverse direction). This is used for rectification, protection, and signal isolation. 2. What is the main function of a PN junction diode?It controls the flow of electrons. By manipulating the PN junction bias, it acts as a switch that is either ON (conducting) or OFF (insulating), depending on the direction of voltage applied. 3. What is the function of a rectifier diode?Rectifier diodes are specifically built to handle the conversion of AC (Alternating Current) to DC (Direct Current). They are robust enough to handle the high currents found in power supply units. 4. Do diodes output AC or DC?Diodes do not generate power. However, when an AC source is fed into a diode, the output is pulsating DC. The diode blocks the negative half of the AC cycle, leaving only the positive flow. 5. What is the function of a Zener diode?Zener diodes are used for voltage regulation. Unlike standard diodes, they are designed to conduct in reverse at a specific breakdown voltage (Vz). They are used to stabilize voltage rails and protect circuits from over-voltage surges. 6. What is the difference between a diode and a rectifier?"Diode" is the broad name for the component type (a two-terminal device). "Rectifier" is a function or a specific type of diode designed for power conversion. All rectifiers are diodes, but not all diodes are rectifiers (e.g., LEDs, Zener, and Varactors are diodes but are not used as rectifiers).