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Samsung Electronics unveiled the industry’s first removable memory cards based on the JEDEC UFS 1.0 Card Extension Standard, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 GB, Samsung’s UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.“Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution,” said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics.“By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritise performance and user convenience above all.”Samsung’s new 256GB UFS removable memory card ─ simply referred to as the UFS card will provide greatly improved user experiences, especially in high-resolution 3D gaming and high-resolution movie playback.It provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530 MB/s which is similar to the sequential read speed of the most widely used SATA SSDs.With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed.Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS.When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPs of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed.With these substantial performance improvements, the new 256GB UFS card significantly reduces multimedia data downloading time, photo thumbnail loading time and buffer clearing time in burst shooting mode, which, collectively, can be particularly beneficial to DSLR camera users.To shoot 24 large/extra fine JPEG photographs (1,120 MB-equivalent) continuously with a high-end DSLR camera, the 256GB UFS card takes less than seven seconds, compared to a UHS-1 microSD card which typically takes about 32 seconds, at 35MB/s.To achieve the highest performance and most power-efficient data transport, the UFS card supports multiple commands with command queuing features and enables simultaneous reading and writing through the use of separately dedicated paths, doubling throughput.As the leading memory storage provider, Samsung has been aggressive in preparing UFS solutions for the marketplace, while contributing to JEDEC standardisation of the Universal Flash Storage 2.0 specification in September 2013 and the UFS 1.0 Card Extension standard in March 2016.Following its introduction of the industry-first 128GB embedded UFS chip in January 2015, the company successfully launched a 256GB embedded UFS memory for high-end mobile devices in February of this year.As of earlier this month, Samsung also completed the Universal Flash Storage Association (UFSA)’s certification program that evaluates electrical and functional specifications for compatibility of a UFS card, and Samsung’s new UFS card products were approved as UFSA-certified UFS cards with the right to use the official UFS logo for the first time in the industry.Reference:S29GL032N11FFIS42S29GL064N90FFIS30S29AS016J70BFA040  

B&R has selected the Hyperstone S8 Flash Memory Controller for their recently announced X90 mobile automation product line. The X90 family of products are designed for securing mobile control and I/O tasks in demanding environments experienced by industrial and mobile machines.To meet all requirements of their robust applications B&R implemented the Hyperstone S8 Flash Memory Controller, which operates over an extended temperature range and ensures the highest reliability and endurance even under extreme environmental conditions. The S8 Controller enables the use of advanced technology NAND flashes in demanding, rugged applications e.g. in commercial vehicles and outdoor applications. B&R X90 products deliver robustness and durability hence the choice of Hyperstone products.X90 mobile With a comprehensive set of standardised components, the X90 product line offers automation solutions perfect for flexible automation concepts used in mobile and outdoor applications found in agriculture and forestry, construction or municipal vehicles. Extended temperature range, strong vibrations or shocks and influences such as salt, oil and UV light must be handled by the system. Basic features of the X90 family include interfaces for CAN, USB, Ethernet and the real-time POWERLINK bus system. A flexible set up allows the addition of I/O channels and interfaces. The X90 series was introduced at Bauma 2016 in Munich.S8 The Hyperstone S8 Flash Memory Controller and its application and Flash specific firmware offer a platform for industrial high endurance Flash Memory cards or modules which are compatible with SD interface host systems. Together with Hyperstone’s proprietary hyReliability firmware, S8 provides enhanced endurance and data retention management, as well as rigorous fail-safe features, all of which are mandatory for industrial applications. Implemented hardware features and special firmware developments enable the highest data retention and refresh mechanisms, even when storage applications are faced with extreme environmental conditions.Reference:MT16JTF51264AZ-1G6M1SDUS5EB-001GMD2202-D192MT9VDDT6472HY-335 F2 

Astute Electronics has strengthened its new memory division portfolio by signing a UK and Ireland deal for Innodisk’s industrial embedded flash and DRAM storage products and technologies. Innodisk focuses on industries such as aerospace, defence, industrial and cloud storage to name a few, and where a commitment to quality service is vitally important. The company manufactures all its products in a purpose-built memory production facility located in Taiwan.Mick Martin, Memory Division Manager at Astute says; “Innodisk’s product range matches our customer base exactly. Its product design features fixed-BOM control to ensure product quality, longevity and stability, and the use of industrial-grade components means that products can withstand temperatures ranging from -40 to 85°C. Sample parts are available very quickly and typical production lead times are only two weeks. The company is also able to customise devices to suit specific applications.”With over 62 patents, Innodisk is a technical innovator, pioneering Pin 7 VCC technology in the SATA interface which eliminates the need for power cables.This led to the development of the SATADOM form factor which is certified by Intel and widely adopted by industrial and embedded system designers worldwide.Innodisk offers a wide selection of flash memory form factors. Flash products are available in single-level-cell (SLC) and multi-layer cell (MLC) styles and a comprehensive range of DRAM modules are also included.Specifically, InnoRobust devices have a hi-rel feature set specially designed for aerospace and defence applications, while ISO/TS 16949 approval guarantees that that the company can deliver reliable storage and memory solutions for in-vehicle computing system applications.Reference:MT16JTF51264AZ-1G6M1SDUS5EB-001GMD2202-D192MD2202-D192-X 

Toshiba Corporation today announced that it has developed the world's first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba's NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba's previous flagship process. The second stage of Fab 5 is currently under construction, and the new technology will also be deployed there.Toshiba has achieved the world's smallest class chip size with the 15nm process plus improved peripheral circuitry technology. The new chips achieve the same write speed as chips formed with second generation 19 nm process technology, but boost the data transfer rate to 533 megabits a second, 1.3 times faster, by employing a high speed interface.Toshiba is now applying the 15nm process technology 3-bit-per-cell chips, and aims to start mass production in the first quarter of this fiscal year, to June 2014. The company will develop controllers for embedded NAND flash memory in parallel and introduce 3-bit-per-cell products for smartphones and tablets, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD). 

Random-access memory, or RAM, is where computers like to store the data they're working on. A processor can retrieve data from RAM tens of thousands of times more rapidly than it can from the computer's disk drive.But in the age of big data, data sets are often much too large to fit in a single computer's RAM. The data describing a single human genome would take up the RAM of somewhere between 40 and 100 typical computers.Flash memory—the type of memory used by most portable devices—could provide an alternative to conventional RAM for big-data applications. It's about a tenth as expensive, and it consumes about a tenth as much power.The problem is that it's also a tenth as fast. But at the International Symposium on Computer Architecture in June, MIT researchers presented a new system that, for several common big-data applications, should make servers using flash memory as efficient as those using conventional RAM, while preserving their power and cost savings.The researchers also presented experimental evidence showing that, if the servers executing a distributed computation have to go to disk for data even 5 percent of the time, their performance falls to a level that's comparable with flash, anyway.In other words, even without the researchers' new techniques for accelerating data retrieval from flash memory, 40 servers with 10 terabytes' worth of RAM couldn't handle a 10.5-terabyte computation any better than 20 servers with 20 terabytes' worth of flash memory, which would consume only a fraction as much power."This is not a replacement for DRAM [dynamic RAM] or anything like that," says Arvind, the Johnson Professor of Computer Science and Engineering at MIT, whose group performed the new work. "But there may be many applications that can take advantage of this new style of architecture. Which companies recognize: Everybody's experimenting with different aspects of flash. We're just trying to establish another point in the design space."Joining Arvind on the new paper are Sang Woo Jun and Ming Liu, MIT graduate students in computer science and engineering and joint first authors; their fellow grad student Shuotao Xu; Sungjin Lee, a postdoc in Arvind's group; Myron King and Jamey Hicks, who did their PhDs with Arvind and were researchers at Quanta Computer when the new system was developed; and one of their colleagues from Quanta, John Ankcorn—who is also an MIT alumnus.Outsourced computationThe researchers were able to make a network of flash-based servers competitive with a network of RAM-based servers by moving a little computational power off of the servers and onto the chips that control the USB flash drives. By preprocessing some of the data on the flash drives before passing it back to the servers, those chips can make distributed computation much more efficient. And since the preprocessing algorithms are wired into the chips, they dispense with the computational overhead associated with running an operating system, maintaining a file system, and the like.With hardware contributed by some of their sponsors—Quanta, Samsung, and Xilinx—the researchers built a prototype network of 20 servers. Each server was connected to a field-programmable gate array, or FPGA, a kind of chip that can be reprogrammed to mimic different types of electrical circuits. Each FPGA, in turn, was connected to two half-terabyte—or 500-gigabyte—flash chips and to the two FPGAs nearest it in the server rack.Because the FPGAs were connected to each other, they created a very fast network that allowed any server to retrieve data from any flash drive. They also controlled the flash drives, which is no simple task: The controllers that come with modern commercial flash drives have as many as eight different processors and a gigabyte of working memory.Finally, the FPGAs also executed the algorithms that preprocessed the data stored on the flash drives. The researchers tested three such algorithms, geared to three popular big-data applications. One is image search, or trying to find matches for a sample image in a huge database. Another is an implementation of Google's PageRank algorithm, which assesses the importance of different Web pages that meet the same search criteria. And the third is an application called Memcached, which big, database-driven websites use to store frequently accessed information.Chameleon clustersFPGAs are about one-tenth as fast as purpose-built chips with hardwired circuits, but they're much faster than central processing units using software to perform the same computations. Ordinarily, either they're used to prototype new designs, or they're used in niche products whose sales volumes are too small to warrant the high cost of manufacturing purpose-built chips.But the MIT and Quanta researchers' design suggests a new use for FPGAs: A host of applications could benefit from accelerators like the three the researchers designed. And since FPGAs are reprogrammable, they could be loaded with different accelerators, depending on the application. That could lead to distributed processing systems that lose little versatility while providing major savings in energy and cost."Many big-data applications require real-time or fast responses," says Jihong Kim, a professor of computer science and engineering at Seoul National University. "For such applications, BlueDBM"—the MIT and Quanta researchers' system—"is an appealing solution."  

A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology of the future, according to a new paper published in the journal Applied Physics Letters, which is produced by AIP Publishing.Phase-change memory is being actively pursued as an alternative to the ubiquitous flash memory for data storage applications, because flash memory is limited in its storage density and phase-change memory can operate much faster.Phase-change memory relies on materials that change from a disordered, amorphous structure to a crystalline structure when an electrical pulse is applied. The material has high electrical resistance in its amorphous state and low resistance in its crystalline state—corresponding to the 1 and 0 states of binary data.Flash memory has problems when devices get smaller than 20 nanometers. But a phase-change memory device can be less than 10 nanometers—allowing more memory to be squeezed into tinier spaces. "That's the most important feature of this kind of memory," said Xilin Zhou of the Shanghai Institute of Microsystem and Information Technology at the Chinese Academy of Sciences. Data can also be written into phase-change memories very quickly and the devices would be relatively inexpensive, he added.So far, the most popular material for phase-change memory devices contains germanium, antimony, and tellurium. But compounds with three elements are more difficult to work with, Zhou said."It's difficult to control the phase-change memory manufacturing process of ternary alloys such as the traditionally used germanium-antimony-tellurium material. Etching and polishing of the material with chalcogens can change the material's composition, due to the motion of the tellurium atoms," explained Zhou.Zhou and his colleagues turned to a material with just two elements: aluminum and antimony. They studied the material's phase-changing properties, finding that it's more thermally stable than the Ge-Sb-Te compound. The researchers discovered that Al50Sb50, in particular, has three distinct levels of resistance—and thus the ability to store three bits of data in a single memory cell, instead of just two. This suggests that this material can be used for multilevel data storage."A two-step resistance drop during the crystallization of the material can be used for multilevel data storage (MLS) and, interestingly, three distinct resistance levels are achieved in the phase-change memory cells," Zhou says. "So the aluminum-antimony material looks promising for use in high-density nonvolatile memory applications because of its good thermal stability and MLS capacity."