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Introduction As a power semiconductor device, IGBT(insulated-gate bipolar transistor) is widely used in the fields of rail transit, smart grid, industrial energy saving, electric vehicles and new energy equipment. It has the characteristics of energy saving, convenient installation and easy maintenance, and stable heat dissipation. It is the core device for energy conversion and transmission. A brief overview, IGBT can be said to be a combination of MOSFET(metal–oxide–semiconductor field-effect transistor) and BJT(bipolar junction transistor). That is, it combines the gate voltage control transistor (high input impedance) of the MOSFET, and uses the dual carriers of the BJT to achieve the purpose of large current (voltage-controlled bipolar device). So what is the internal structure of such a combination? This article will explain in detail with examples. What is IGBT and Its Applications Catalog Introduction Ⅰ IGBT Module Explained Ⅱ IGBT Internal Structure Ⅲ IGBT Internal Current Flow Ⅳ How to Disassemble IGBT Module? Ⅴ FAQ Ⅰ IGBT Module Explained The model of the IGBT module to be disassembled as an example is: FF1400R17IP4. The appearance and equivalent circuit of the module are shown in Figure 1. The length, width and height of this module are: 25cmx8.9cmx3.8cm. The module contains two IGBTs, which are what we often call half-bridge modules. The rated voltage and current of each IGBT are 1.7kV and 1.4kA. Figure 1. FF1400R17IP4 Part 8, 9, 10, 11, and 12 are power terminals and need to be connected to a power circuit.1, 2, 3, 4, and 5 are auxiliary control terminals, which need to be connected to the gate drive circuit.6 and 7 are NTC thermistors, used for temperature detection or over-temperature protection.After having a general understanding of its structure, what can we do with such a black module with this structure? Take an example around us: new electric vehicles, everyone should be familiar with it. Three such black modules can be used as a three-phase motor driver. If it is equipped with a battery, it can drive an electric bus. Of course, this module is also used in many other applications. Figure 2. IGBT in Electric Bus   Ⅱ IGBT Internal Structure After having a preliminary understanding of the external structure and application of the IGBT module, let us enter the subject of this article to see what the inside of this high-tech black module looks like. Figure 3 is the internal picture of the IGBT module with the black casing removed. It should be noted that the most common copper and aluminum are inside the IGBT module. Figure 3. IGBT Internal Structure Figure 4 is a cross-sectional view of the IGBT module. If the black casing and external connection terminals are removed, the IGBT module mainly contains 3 components, the heat dissipation substrate, the DBC substrate and the silicon chip (including the IGBT chip and the Diode chip), and the rest is mainly solder layers and interconnecting wires are used to connect IGBT chips, Diode chips, power terminals, control terminals and DBC(Direct Bond Copper). Below we will briefly introduce each part. Figure 4. IGBT Section View ① Heat Sink SubstrateThe bottom of the IGBT module is the heat dissipation substrate, the main purpose is to quickly transfer the heat generated by the IGBT switching process. Since copper has better thermal conductivity, the substrate is usually made of copper, and the thickness of it is 3-8mm. Of course, there are also substrates made of other materials, such as aluminum silicon carbide (AlSiC), both of which have their own advantages and disadvantages. ② DBCDBC (Direct Bond Copper) is a ceramic surface metallization technology, which contains 3 layers. Have a ceramic insulating layer in the middle and a copper clad layer above and below respectively, as shown in Figure 5(a). Simply put, it is to cover both sides of an insulating material with a copper layer, and then etch a pattern that can carry current on the front side, and the back side must be directly soldered to the heat sink substrate. Figure 5. BDC Base vs PCB The main function of DBC needs to ensure the electrical insulation capacity between the silicon chip and the heat dissipation substrate and good thermal conductivity, while also providing a certain current transmission capacity. The DBC substrate is similar to a 2-layer PCB circuit board. The insulating material in the middle of the PCB is generally FR4, while the commonly used ceramic insulating materials for DBC are aluminum oxide (Al2O3) and aluminum nitride (AlN).For the IGBT module analyzed in this article, there are 6 DBCs inside, and each has 4 IGBT chips and 2 Diode chips. Among them, 2 IGBT chips and 1 Diode chip are used as the upper tube, and the rest are used as the lower tube. As shown in Figure 6. Figure 6. DBC Diagram and Equivalent Circuit ③ IGBT ChipThe IGBT chip model used inside the module is: IGCT136T170. The manual can be downloaded from Infineon official website. Figure 7 shows the top view and basic parameters of the IGBT chip. The gate and emitter of the IGBT are above the chip (front side), and the collector is below (back side). The thickness of the chip is 200um. After the IGBT powers on, the current flows from bottom to top, so the IGBT of this structure can also be called a vertical device. Chip Type VCE ICn1) Die Size IGC136T170S8RH2 1700A 117.5A 17.72×7.7mm2 Figure 7. IGBT Chip Diagram If you make a vertical cut on the 200um chip, you can get the internal structure shown in Figure 8, which is a combination of P-type or N-type semiconductors with different doping. Figure 8 shows the well-known equivalent circuit of an IGBT, which is usually understood as a MOS-controlled PNP transistor. When start to learn about power electronics, you may feel that this picture is a bit strange. Why not draw the collector on the top and the emitter on the bottom? Until you understand that the IGBT current flows from bottom to top, it is not difficult to explain. Figure 8. IGBT Chip Structure and Equivalent Circuit Let’s have a general understanding of the electrical parameters of this IGBT chip. This chip can pass a DC current of 117.5A at 100°C. It can be seen from Figure 4 that a single IGBT device inside the module contains a total of 12 IGBT chips, so the total current is: 117.5*12=1412A, which is basically the same as the 1400A rated current in the IGBT module manual.In order to ensure the current sharing effect between IGBT chips, a 11.5Ω resistor has been integrated inside the gate of each chip. At the same time, considering the current sharing between the DBCs, the two chips on each DBC share a gate resistor externally, as shown in Figure 10. When measuring it with a multimeter, and the resistance is about 4.13Ω. You can calculate it in conjunction with Figure 9 to see if it is consistent with the 1.6Ω in the IGBT module manual. Of course, you can refer to the official manual for more detailed parameters of the IGBT chip. Figure 9. IGBT Equivalent Circuit ④ Diode ChipFigure 10 is a top view of the Diode chip, with the anode on the front and the cathode on the back. The current direction of the diode is from top to bottom, which is exactly the opposite of the current direction of the IGBT. The rated current of the diode chip is 235A, and each IGBT is composed of 6 diodes in parallel, and the total current can reach 1410A, which is basically the same as the 1400A in the module manual. The thickness of diode chip is the same as IGBT, it is also 200um. For more detailed parameters of the diode chip, please refer to the official manual. Chip Type VR IFn1) Die Size SIDC130D170H 1700A 235A 16.3×8mm2 Figure 10. Diode Diagram Such a thin semiconductor material can have kV voltage and hundreds of amperes of current on and off, it’s amazing. This is why the price of high-power semiconductor devices is so very expensive.The upper copper layer interconnection of IGBT chip, Diode chip and DBC is generally realized by bonding wires. Commonly used bonding wires are aluminum wire and copper wire. Among them, the aluminum wire bonding process is mature and the cost is low, but the electrical and thermodynamic properties of the aluminum wire bonding are poor, and the expansion coefficient mismatch is large, which affects the service life of the IGBT. The copper wire bonding process has the advantages of excellent electrical and thermodynamic properties, high reliability, and is suitable for modules with high power density and efficient heat dissipation.   Ⅲ IGBT Internal Current Flow After having a basic understanding of the internal structure of the IGBT module, let us go back and interconnect all the above components to see how the current flows inside the IGBT module. Here we take the upper tube IGBT in one of the DBCs as an example to illustrate the current flow. Red represents the current direction of the upper tube IGBT (S1 and S2), and blue represents the current direction of the diode D1. Figure 11(b) is a left cross-sectional view and a schematic diagram of the current direction of the module of Figure . Figure 11(a). IGBT Current Flow Figure 11(b). IGBT Current   Ⅳ How to Disassemble IGBT Module? Some friends may be curious about how to disassemble this module, but it is actually very simple. You only need to prepare two screwdrivers and a small hammer. Figure 12. IGBT Disassemble Step 1: Unscrew the 4 screws at the bottom of the IGBT module.Step 2: Use a flat-blade screwdriver to pry open all the terminals on the front of the IGBT module. This step is very important. It is necessary to ensure that all the terminals after being pried are vertical to the module substrate.Step 3: You need to fix the IGBT in one place, or use a flat-blade screwdriver to align any position of the connection between the plastic casing of the IGBT module and the substrate, hit the screwdriver with a hammer, and pry the casing from the substrate with the screwdriver. After prying open one position, place something on it, and then pry another position, repeat that, after slowly prying open, just pry open with your hands directly.   Ⅴ FAQ 1. What is IGBT module?An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. ... An IGBT power module functions as an electronic switching device. By alternate switching direct current (DC) can be transformed to alternating current (AC) and vice versa. 2. How does IGBT module work?The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. 3. What is the purpose of IGBT?The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input. 4. How many layers are there in IGBT?Working of IGBTIGBT is constructed with 4 layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we have the n+ layers. 5. Which are the terminals of IGBT?The three terminals of IGBT are Gate, Collector and Emitter. 6. How many terminals Mosfet has?four terminalsThe MOSFET has four terminals: drain, source, gate, and body or substrate. 7. What is the function of injecting layer in IGBT?The p+ substrate is also called injector layer because it injects holes into n- layer. The n- layer is called drift region. The next p layer is called the body of IGBT. The n- layer in between the p+ & p region serves to accommodate the depletion layer of pn- junction i.e. J2. 8. Can I replace IGBT with MOSFET?Due to the higher usable current density of IGBTs, it can usually handle two to three times more current than a typical MOSFET it replaces. This means that a single IGBT device can replace multiple MOSFETs in parallel operation or any of the super-large single power MOSFETs that are available today. 9. What are the three terminals of an IGBT and how does it function?The IGBT (insulated gate bipolar transistor) is a three-terminal electronic component, and these terminals are termed as emitter (E), collector(C) and gate(G). Two of its terminals namely collector and emitter are associated with a conductance path and the remaining terminal 'G' is associated with its control. 10. What is an IGBT describe its construction?IGBT – Working, Types, Structure, Operation & Applications. ... The IGBT (Insulated Gate Bipolar Transistor) takes the best parts of both BJT and MOSFET into a single transistor. It takes the input characteristics (high input impedance) of MOSFET (Insulated Gate) and the output characteristics of BJT (Bipolar nature). 11. How does IGBT convert DC to AC?The IGBT act as a switch (when a signal is applied to the gate, they turn on and then turn off when the signal is removed). By closing Q1 and Q4, a positive d.c. supply is applied to the load. Q2 and Q3 will result in a negative d.c. supply across the load. 12. What is the advantage of IGBT?The main advantages of IGBT over a Power MOSFET and a BJT are: It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced. 13. What is drift layer in IGBT?The drift region (electric field or movement of charge) of the IGBT works as a base of the PNP transistor . The current gain of the transistor depends upon the width and doping level of the transistor. 14. What is the structure of IGBT?The structure of IGBT is very much similar to that of PMOSFET, except one layer known as injection layer which is p+ unlike n+ substrate in PMOSFET. This injection layer is the key to the superior characteristics of IGBT. Other layers are called the drift and the body region. The two junctions are labeled J1 and J2. 15. What are the advantages of IGBTs?Advantages of IGBT:Simple drive circuitLow on-resistanceHigh voltage capacityFast switching speedEasy of driveLow switching lossLow on stage power dissipationLow gate drive requirement 16. Why IGBT is very popular nowadays?With its lower on-state resistance and conduction losses as well as its ability to switch high voltages at high frequencies without damage makes the Insulated Gate Bipolar Transistor ideal for driving inductive loads such as coil windings, electromagnets and DC motors. 17. Why diode is used in IGBT?We know that MOSFET or IGBT is a unidirectional device, they only conduct current in forward bias and block the current in reverse bias. ... For this reason, an external diode is connected across the MOSFET or IGBT or SCR to provide a path for reverse current.

The insulated gate bipolar transistor (hereinafter referred to as IGBT) is a composite device of MOSFET and GTR. Thus it has the advantages of MOSFET and GTR, it is an ideal switch device to replace GTR, which is widely used at present with its ability to turn off, and it’s also widely used in all kinds of solid-state power supply.     Catalog   I. What is IGBT? II. The Driving Requirement of IGBT III. The Overcurrent Protection Analysis of IGBT IV. Simulation and Experiment FAQ   I. What is IGBT?   The insulated gate bipolar transistor (hereinafter referred to as IGBT) is a composite device of MOSFET and GTR. Thus it has the advantages of MOSFET, including fast operation speed, high switching frequency, high input impedance, simple drive circuit, and good thermal temperature; it also contains the advantages of GTR, like large current-carrying capacity and high blocking voltage. It is an ideal switch device to replace GTR, which is widely used at present with its ability to turn off and is also widely used in all kinds of solid-state power supply.   And it requires a reasonable drive circuit, but its improper control may cause damage, such as IGBT damage due to overcurrent, and affects the performance of the whole machine. In a word, the drive circuit is very important to IGBT. So this paper mainly discusses the driving and short-circuit protection of IGBT, based on the analysis of its working principle, then designs and simulates the overcurrent protection of the drive circuit.     Electronic Basics #28: IGBT and when to use them     II. The Driving Requirement of IGBT   Driving Requirement IGBT is a voltage-type control device. To make IGBT turn on and off safely and reliably, the driving circuit must meet the following conditions.  And the gate capacitance of IGBT is much larger than that of MOSFET. To increase the switching speed, it is necessary to have a suitable gate bias voltage and gate series resistance.   Gate Voltage In any case, the gate drive voltage in the open state can not exceed the limited value (generally 20V) given by the parameter table, and the optimal gate forward-bias voltage is 15 V ±1.5V. This value is sufficient to allow IGBT to reach saturation and then getting conduction, which can minimize the conduction loss. In the case of gate voltage is cutting off with the value of zero, to reduce the turn-off time and improve the withstand voltage and anti-interference ability of IGBT, a reverse voltage of -5 ~ -15 V can be added between the gate and the source electrode when the IGBT is in a blocking state.   Gate Series Resistance Core The selection of appropriate gate series resistance (RG) is very important for the drive of IGBT. The effect of RG on switching loss is shown in Fig.1. Fig. 1 The Effect of RG on Switching Loss It is the dynamic current of charging and discharging the input capacitance rather than the DC current that is required in a static state, and the input impedance of IGBT is up to 109 ~ 1011. In this case, the DC gain can reach 108 ~ 109, almost without any power consumption.   To decrease the steepness of the front and rear edges of the control pulse, prevent oscillation and reduce the voltage tip pulse with a large IGBT collector, it is necessary to add a gate series resistor RG. When the RG increases, the on-off time will prolong and the energy consumption of the IGBT will increase; in turn, the RG reduces, the di/dt will increase and may damage IGBT.   Thus, according to the current capacity and voltage rating, and switching frequency of IGBT, it is necessary to select a suitable RG, usually from dozens of ohms to hundreds of ohms. To get a more specific value of RG, it is suggested to refer to the device manual. Fig.2 Main Circuit of Inverter Power Supply   Requirements for Driving Power The switching process of IGBT consumes a certain amount of power from the driving power supply. The difference between the gate forward bias voltage and the reverse bias voltage is the △VGE; working frequency is f, the gate capacitance is CGE; and the minimum peak current of the power supply is:     Overcurrent Protection for IGBT The overcurrent protection of IGBT is limiting the short-circuit current and its I-V track to the short circuit safe working area when the device overflows, and the IGBT is turned off before the device is damaged to avoid the damage of the switch tube. When the upper and lower arms conducting, the power supply voltage is almost all added to the two ends of the switch, at this time, the larger the short circuit current is, the smaller the saturation voltage drop will be, during this time, the device would be damaged due to the large current.     III. The Overcurrent Protection Analysis of IGBT   Based on the above analysis, an IGBT drive circuit which contains isolated optocoupler and over-current protection has been put forward in this article, as shown in Fig.3. Fig.3 The Drive and Overcurrent Protection Circuit of IGBT  In Fig.3, the high-speed optocoupler 6N137 realizes the electrical isolation of the input and output signals, which is suitable for high-frequency applications. The main drive circuit adopts push-pull output mode, which effectively reduces the output impedance of the drive circuit, improves the driving ability, and makes it suitable for the drive of high power IGBT.   The over-current protection circuit uses the principle of desaturation of the collector. When an over-current occurs, the IGBT will be turn off. The V1, V3and V4 constitute the driving pulse amplifier circuit; V1 and R5 constitute an emitter follower. The emitter follower provides a fast current source, which reduces the turn-off time. Using the collector desaturation principle, D1, R6, R7, and V2 form a short-circuit signal detection circuit. D1 is a fast recovery diode, to prevent the high voltage on the collector from running into the driving circuit when IGBT is turned off.   In order to prevent the power device from being misled by static electricity, bidirectional voltage regulators D3 and D4 are connected in parallel between the gate sources.   Normal When the control circuit sends a high-level signal, the optocoupler 6N137 turns on, V1, V2 turns off, V3 turns on and V4 turns off. And the drive circuit provides IGBT a driving voltage of +15V to turn it on. When the control circuit sends a low level signal, the optocoupler 6N137 turns off, V2 and V3 conduct, and the drive circuit provides a voltage of -5v to IBGT, making IGBT shut down.   Overcurrent When a short-circuit fault exists, the voltage of 15V is almost all added to the IGBT. At this time, the voltage of V2 cuts off in the short circuit detection circuit, and the electric potential of point A depends on the partial voltage of D1, R6, R7, and VCES.  When the main circuit works normally and the IGBT is on, the A point is kept low, which is lower than the B point potential. All A1 output low level, this time V5 cuts off, and the C point is high level.   So when operating normally, the input to the optocoupler 6N137 is always consistent with the output. When overcurrent occurs, the IGBT collector is desaturated, A point potential rises, when it is higher than B potential ( the setting potential), that is, when the current exceeds the designed fixed value, the A1 overturns and outputs a high level, meanwhile, V5 is switched on, thereby making C in a low potential state. The input signal to the optocoupler 6N137 is always low level regardless of whether the control circuit is sent to a high level or a low level to turn off the power tube. Thus, over-current protection is achieved until the circuit is troubleshot and then restarted.   Fig. 4 Strong Driving Circuit of IGBT with Short-Circuit Protection   IV. Simulation and Experiment   Input to the drive circuit with a high level of 15V and a low level of -5V square wave signal. The output waveform of IGBT is shown in Fig.5  Fig.5 IGBT Output Signal According to the above principle and analysis, the actual output waveform of the circuit is shown in Fig.6  Fig.6 Actual Circuit Output Waveform Conclusion (1) Providing -5V and +15V driving voltage for IGBT to ensure IGBT's turn on and off. (2) Having over-current protection to prevent the IGBT from being damaged when the current is overcurrent. (3) Using in a wide range because the circuit can dynamically adjust the maximum current according to the load. (4) Adopting discrete components as the driving circuits to reduce the cost of the whole system.     FAQ   1. How does an insulated gate bipolar transistor work? The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.   2. Which insulated gate bipolar transistor? IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.   3. How do I trigger IGBT?   An IGBT is simply switched “ON” and “OFF” by triggering and disabling its Gate terminal. A constant +Ve voltage i/p signal across the 'G' and the 'E' will retain the device in its “ON” state, while deduction of the i/p signal will cause it to turn “OFF” like BJT or MOSFET.   4. Why use an IGBT instead of a Mosfet? The main advantages of IGBT over a Power MOSFET and a BJT are: 1. It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced.   5. Why IGBT is used an inverter? The Insulated Gate Bipolar Transistor (IGBT) is used in VFD inverter modules as the preferred electronic power switch for the following reasons. ... The IGBT has a fast switching speed. This minimises switching losses and allows for high switching frequencies which is good for motor harmonic and noise reduction.   6. What is difference between IGBT and SCR? SCR is a silicon control rectifier and igbt is a insulated gate bipolar transistor. ... scr has anode ,cathode and gate and igbt has base ,emitter, gate ,and collector. In the both devices gate terminal is used for triggering. Scr has only one insultive layer but igbt has 2 insulated silicon layers.   7. What is IGBT principle? IGBT Principle of Operation：IGBT requires only a small voltage to maintain conduction in the device unlike in BJT. The IGBT is a unidirectional device, that is, it can only switch ON in the forward direction. This means current flows from the collector to the emitter unlike in MOSFETs, which are bi-directional.   8. What causes IGBT failure? The failure modes for the IGBT are in the form of degradation of certain key electrical parameters (e.g., leakage current, threshold voltage) or the loss of functionality (inability to turn-off). The failure causes can be due to environmental conditions or operating conditions.   9. Is IGBT unipolar or bipolar? The IGBT cannot conduct current in the reverse direction (from emitter to collector) even with a positive Vge applied to it, because it has a bipolar-type structure.   10. Which IGBT used in VFD? IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.   11. Can we use IGBT instead of Mosfet? Due to the higher usable current density of IGBTs, it can usually handle two to three times more current than a typical MOSFET it replaces. This means that a single IGBT device can replace multiple MOSFETs in parallel operation or any of the super-large single power MOSFETs that are available today.   12. How fast can an IGBT switch? The typical switching time of IGBT is about hundreds of nanoseconds and the value varies with load current, junction temperature, and other factors [17–20]. However, the change of IGBT switching time is very small [4,5] (range from several to tens of nanoseconds) when the health status of the IGBT module changes.   13. Is IGBT faster than Mosfet? When compared to the IGBT, a power MOSFET has the advantages of higher commutation speed and greater efficiency during operation at low voltages. ... The IGBT combines the simple gate-drive characteristics found in the MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor.   14. How many IGBT are in a VFD? Six IGBTs. In a typical six pulse drive there are six IGBTs pulsing voltage up to 15,000 times per second. Since their introduction in the 1980's, IGBTs have literally switched up the market and now play a large role in many modern day power electronics applications where speed and process control are needed.   15. What is the function of IGBT? The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.   16. Is IGBT a rectifier? IGBTs have a pretty good current handling capacity when compared to standard BJTs (Bipolar junction transistor) and MOSFETs (metal–oxide–silicon transistor). IGBTs are devices whose switching is fully controlled electronically. Most standard rectifiers in the market are typically 6-pulse rectifiers.   17. How many types of IGBT are there? two types. The IGBT is classified as two types based on the n+ buffer layer, the IGBTs that are having the n+ buffer layer is called the Punch through IGBT (PT-IGBT), the IGBTs that does not have an n+ buffer layer are called the Non-Punch Through- IGBT (NPT- IGBT).   18. How do you prevent IGBT failure? IGBT turn-off requires that the IGBT be driven to the cutoff region of operation so that it can successfully block the reverse high voltage across it once the high-side IGBT has turned on. In principle this can be achieved by reducing the IGBT gate-emitter voltage to 0 V.   19. What is the difference between unipolar and bipolar devices? As their name implies, Bipolar Transistors are “Bipolar” devices because they operate with both types of charge carriers, Holes and Electrons. The Field Effect Transistor on the other hand is a “Unipolar” device that depends only on the conduction of electrons (N-channel) or holes (P-channel).   20. What is IGBT and Igct? GTO stands for Gate Turn-Off Thyristor, IGCT stands for Insulated Gate Commutated Thyristor and IGBT stands for Insulated Gate Bipolar Transistor. The comparison between the three devices are derived with respect to symbol, characteristic, advantages, disadvantages and applications.   You May Also Like The First Fully 2D FETs Lead A Faster Electronic Future The First Printed 2D Transistor Is Discovered by Researchers The First Chemical Circuit Developed Smarter transistors could be three times more efficient