Phone

    00852-6915 1330

What is IGBT? Structure Explained and Disassembled

  • Contents

Introduction

As a power semiconductor device, IGBT(insulated-gate bipolar transistor) is widely used in the fields of rail transit, smart grid, industrial energy saving, electric vehicles and new energy equipment. It has the characteristics of energy saving, convenient installation and easy maintenance, and stable heat dissipation. It is the core device for energy conversion and transmission. A brief overview, IGBT can be said to be a combination of MOSFET(metal–oxide–semiconductor field-effect transistor) and BJT(bipolar junction transistor). That is, it combines the gate voltage control transistor (high input impedance) of the MOSFET, and uses the dual carriers of the BJT to achieve the purpose of large current (voltage-controlled bipolar device). So what is the internal structure of such a combination? This article will explain in detail with examples.

What is IGBT and Its Applications

Catalog

Introduction

Ⅰ IGBT Module Explained

Ⅱ IGBT Internal Structure

Ⅲ IGBT Internal Current Flow

Ⅳ How to Disassemble IGBT Module?

Ⅴ FAQ

Ⅰ IGBT Module Explained

The model of the IGBT module to be disassembled as an example is: FF1400R17IP4. The appearance and equivalent circuit of the module are shown in Figure 1. The length, width and height of this module are: 25cmx8.9cmx3.8cm. The module contains two IGBTs, which are what we often call half-bridge modules. The rated voltage and current of each IGBT are 1.7kV and 1.4kA.

FF1400R17IP4

Figure 1. FF1400R17IP4 Part

8, 9, 10, 11, and 12 are power terminals and need to be connected to a power circuit.
1, 2, 3, 4, and 5 are auxiliary control terminals, which need to be connected to the gate drive circuit.
6 and 7 are NTC thermistors, used for temperature detection or over-temperature protection.
After having a general understanding of its structure, what can we do with such a black module with this structure? Take an example around us: new electric vehicles, everyone should be familiar with it. Three such black modules can be used as a three-phase motor driver. If it is equipped with a battery, it can drive an electric bus. Of course, this module is also used in many other applications.

electric bus

Figure 2. IGBT in Electric Bus

 

Ⅱ IGBT Internal Structure

After having a preliminary understanding of the external structure and application of the IGBT module, let us enter the subject of this article to see what the inside of this high-tech black module looks like. Figure 3 is the internal picture of the IGBT module with the black casing removed. It should be noted that the most common copper and aluminum are inside the IGBT module.

IGBT Internal Structure

Figure 3. IGBT Internal Structure

Figure 4 is a cross-sectional view of the IGBT module. If the black casing and external connection terminals are removed, the IGBT module mainly contains 3 components, the heat dissipation substrate, the DBC substrate and the silicon chip (including the IGBT chip and the Diode chip), and the rest is mainly solder layers and interconnecting wires are used to connect IGBT chips, Diode chips, power terminals, control terminals and DBC(Direct Bond Copper). Below we will briefly introduce each part.

IGBT Section View

Figure 4. IGBT Section View


① Heat Sink Substrate
The bottom of the IGBT module is the heat dissipation substrate, the main purpose is to quickly transfer the heat generated by the IGBT switching process. Since copper has better thermal conductivity, the substrate is usually made of copper, and the thickness of it is 3-8mm. Of course, there are also substrates made of other materials, such as aluminum silicon carbide (AlSiC), both of which have their own advantages and disadvantages.

② DBC
DBC (Direct Bond Copper) is a ceramic surface metallization technology, which contains 3 layers. Have a ceramic insulating layer in the middle and a copper clad layer above and below respectively, as shown in Figure 5(a). Simply put, it is to cover both sides of an insulating material with a copper layer, and then etch a pattern that can carry current on the front side, and the back side must be directly soldered to the heat sink substrate.

BDC Base vs PCB

Figure 5. BDC Base vs PCB

The main function of DBC needs to ensure the electrical insulation capacity between the silicon chip and the heat dissipation substrate and good thermal conductivity, while also providing a certain current transmission capacity. The DBC substrate is similar to a 2-layer PCB circuit board. The insulating material in the middle of the PCB is generally FR4, while the commonly used ceramic insulating materials for DBC are aluminum oxide (Al2O3) and aluminum nitride (AlN).
For the IGBT module analyzed in this article, there are 6 DBCs inside, and each has 4 IGBT chips and 2 Diode chips. Among them, 2 IGBT chips and 1 Diode chip are used as the upper tube, and the rest are used as the lower tube. As shown in Figure 6.

DBC Diagram and Equivalent Circuit

Figure 6. DBC Diagram and Equivalent Circuit

③ IGBT Chip
The IGBT chip model used inside the module is: IGCT136T170. The manual can be downloaded from Infineon official website. Figure 7 shows the top view and basic parameters of the IGBT chip. The gate and emitter of the IGBT are above the chip (front side), and the collector is below (back side). The thickness of the chip is 200um. After the IGBT powers on, the current flows from bottom to top, so the IGBT of this structure can also be called a vertical device.

Chip Type

VCE

ICn1)

Die Size

IGC136T170S8RH2

1700A

117.5A

17.72×7.7mm2

IGBT Chip Diagram

Figure 7. IGBT Chip Diagram

If you make a vertical cut on the 200um chip, you can get the internal structure shown in Figure 8, which is a combination of P-type or N-type semiconductors with different doping. Figure 8 shows the well-known equivalent circuit of an IGBT, which is usually understood as a MOS-controlled PNP transistor. When start to learn about power electronics, you may feel that this picture is a bit strange. Why not draw the collector on the top and the emitter on the bottom? Until you understand that the IGBT current flows from bottom to top, it is not difficult to explain.

IGBT Chip Structure and Equivalent Circuit

Figure 8. IGBT Chip Structure and Equivalent Circuit

Let’s have a general understanding of the electrical parameters of this IGBT chip. This chip can pass a DC current of 117.5A at 100°C. It can be seen from Figure 4 that a single IGBT device inside the module contains a total of 12 IGBT chips, so the total current is: 117.5*12=1412A, which is basically the same as the 1400A rated current in the IGBT module manual.
In order to ensure the current sharing effect between IGBT chips, a 11.5Ω resistor has been integrated inside the gate of each chip. At the same time, considering the current sharing between the DBCs, the two chips on each DBC share a gate resistor externally, as shown in Figure 10. When measuring it with a multimeter, and the resistance is about 4.13Ω. You can calculate it in conjunction with Figure 9 to see if it is consistent with the 1.6Ω in the IGBT module manual. Of course, you can refer to the official manual for more detailed parameters of the IGBT chip.

IGBT Equivalent Circuit

Figure 9. IGBT Equivalent Circuit

④ Diode Chip
Figure 10 is a top view of the Diode chip, with the anode on the front and the cathode on the back. The current direction of the diode is from top to bottom, which is exactly the opposite of the current direction of the IGBT. The rated current of the diode chip is 235A, and each IGBT is composed of 6 diodes in parallel, and the total current can reach 1410A, which is basically the same as the 1400A in the module manual. The thickness of diode chip is the same as IGBT, it is also 200um. For more detailed parameters of the diode chip, please refer to the official manual.

Chip Type

VR

IFn1)

Die Size

SIDC130D170H

1700A

235A

16.3×8mm2

Diode Diagram

Figure 10. Diode Diagram

Such a thin semiconductor material can have kV voltage and hundreds of amperes of current on and off, it’s amazing. This is why the price of high-power semiconductor devices is so very expensive.
The upper copper layer interconnection of IGBT chip, Diode chip and DBC is generally realized by bonding wires. Commonly used bonding wires are aluminum wire and copper wire. Among them, the aluminum wire bonding process is mature and the cost is low, but the electrical and thermodynamic properties of the aluminum wire bonding are poor, and the expansion coefficient mismatch is large, which affects the service life of the IGBT. The copper wire bonding process has the advantages of excellent electrical and thermodynamic properties, high reliability, and is suitable for modules with high power density and efficient heat dissipation.

 

Ⅲ IGBT Internal Current Flow

After having a basic understanding of the internal structure of the IGBT module, let us go back and interconnect all the above components to see how the current flows inside the IGBT module. Here we take the upper tube IGBT in one of the DBCs as an example to illustrate the current flow. Red represents the current direction of the upper tube IGBT (S1 and S2), and blue represents the current direction of the diode D1. Figure 11(b) is a left cross-sectional view and a schematic diagram of the current direction of the module of Figure .

IGBT Current Flow

Figure 11(a). IGBT Current Flow

IGBT Current

Figure 11(b). IGBT Current

 

Ⅳ How to Disassemble IGBT Module?

Some friends may be curious about how to disassemble this module, but it is actually very simple. You only need to prepare two screwdrivers and a small hammer.

IGBT Disassemble

Figure 12. IGBT Disassemble

Step 1: Unscrew the 4 screws at the bottom of the IGBT module.
Step 2: Use a flat-blade screwdriver to pry open all the terminals on the front of the IGBT module. This step is very important. It is necessary to ensure that all the terminals after being pried are vertical to the module substrate.
Step 3: You need to fix the IGBT in one place, or use a flat-blade screwdriver to align any position of the connection between the plastic casing of the IGBT module and the substrate, hit the screwdriver with a hammer, and pry the casing from the substrate with the screwdriver. After prying open one position, place something on it, and then pry another position, repeat that, after slowly prying open, just pry open with your hands directly.

 

Ⅴ FAQ

1. What is IGBT module?
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. ... An IGBT power module functions as an electronic switching device. By alternate switching direct current (DC) can be transformed to alternating current (AC) and vice versa.

2. How does IGBT module work?
The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

3. What is the purpose of IGBT?
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

4. How many layers are there in IGBT?
Working of IGBT
IGBT is constructed with 4 layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we have the n+ layers.

5. Which are the terminals of IGBT?
The three terminals of IGBT are Gate, Collector and Emitter.

6. How many terminals Mosfet has?
four terminals
The MOSFET has four terminals: drain, source, gate, and body or substrate.

7. What is the function of injecting layer in IGBT?
The p+ substrate is also called injector layer because it injects holes into n- layer. The n- layer is called drift region. The next p layer is called the body of IGBT. The n- layer in between the p+ & p region serves to accommodate the depletion layer of pn- junction i.e. J2.

8. Can I replace IGBT with MOSFET?
Due to the higher usable current density of IGBTs, it can usually handle two to three times more current than a typical MOSFET it replaces. This means that a single IGBT device can replace multiple MOSFETs in parallel operation or any of the super-large single power MOSFETs that are available today.

9. What are the three terminals of an IGBT and how does it function?
The IGBT (insulated gate bipolar transistor) is a three-terminal electronic component, and these terminals are termed as emitter (E), collector(C) and gate(G). Two of its terminals namely collector and emitter are associated with a conductance path and the remaining terminal 'G' is associated with its control.

10. What is an IGBT describe its construction?
IGBT – Working, Types, Structure, Operation & Applications. ... The IGBT (Insulated Gate Bipolar Transistor) takes the best parts of both BJT and MOSFET into a single transistor. It takes the input characteristics (high input impedance) of MOSFET (Insulated Gate) and the output characteristics of BJT (Bipolar nature).

11. How does IGBT convert DC to AC?
The IGBT act as a switch (when a signal is applied to the gate, they turn on and then turn off when the signal is removed). By closing Q1 and Q4, a positive d.c. supply is applied to the load. Q2 and Q3 will result in a negative d.c. supply across the load.

12. What is the advantage of IGBT?
The main advantages of IGBT over a Power MOSFET and a BJT are: It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced.

13. What is drift layer in IGBT?
The drift region (electric field or movement of charge) of the IGBT works as a base of the PNP transistor . The current gain of the transistor depends upon the width and doping level of the transistor.

14. What is the structure of IGBT?
The structure of IGBT is very much similar to that of PMOSFET, except one layer known as injection layer which is p+ unlike n+ substrate in PMOSFET. This injection layer is the key to the superior characteristics of IGBT. Other layers are called the drift and the body region. The two junctions are labeled J1 and J2.

15. What are the advantages of IGBTs?
Advantages of IGBT:
Simple drive circuit
Low on-resistance
High voltage capacity
Fast switching speed
Easy of drive
Low switching loss
Low on stage power dissipation
Low gate drive requirement

16. Why IGBT is very popular nowadays?
With its lower on-state resistance and conduction losses as well as its ability to switch high voltages at high frequencies without damage makes the Insulated Gate Bipolar Transistor ideal for driving inductive loads such as coil windings, electromagnets and DC motors.

17. Why diode is used in IGBT?
We know that MOSFET or IGBT is a unidirectional device, they only conduct current in forward bias and block the current in reverse bias. ... For this reason, an external diode is connected across the MOSFET or IGBT or SCR to provide a path for reverse current.

Kynix

Kynix was founded in 2008, specializing in the electronic components distribution business. We adhere to honesty and ethics as our business philosophy and have gradually established an excellent reputation and credibility in our international business. With the accurate quotation, excellent credit, reasonable price, reliable quality, fast delivery, and authentic service, we have won the praise of the majority of customers.

Join our mailing list!

Be the first to know about new products, special offers, and more.

Leave a Reply

We'd love to hear from you! Feel free to share your thoughts and comments below. Rest assured, your email address will remain private.

Name *
Email *
Captcha *
Rating:

Kynix

  • How to purchase

  • Order
  • Search & Inquiry
  • Shipping & Tracking
  • Payment Methods
  • Contact Us

  • Tel: 00852-6915 1330
  • Email: info@kynix.com
  • Follow Us

authentication

Kynix

© 2008-2026 kynix.com all rights reserved.