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Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes.SummaryFujitsu,a company that provide innovative IT services and digital technologies like mobile,AI,cloud or etc,announced the development of a gallium-nitride(GaN) high-electron mobility transistor(HEMT) power amplifier for use in W-band(75-110 GHz)transmissions in July 2017 at the 12th international Conference. To realize long-distance,high-capacity wireless communications,a promising approach is to utilize the W-band and other high frequency bands that encompass a broad range of usable frequencies, and increase output with a transmission power amplifier. At the same time, demand exists for improved efficiency in power amplifiers in order to mitigate the increased power consumption of communication systems. Fujitsu has now succeeded in developing a power amplifier for use in W-band transmissions that offers both high output power and high efficiency, improving transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance. Fujitsu has achieved 4.5 watts per millimeter of gate width, the world's highest output density in the W-band, and has confirmed a 26% reduction in energy consumption compared to conventional technology. Fujitsu anticipates that setting this power amplifier between wireless communication systems in two locations will achieve high-bandwidth communications at 10 gigabits per second (Gbit/s) over a distance of 10km. Part of this research was carried out with support from Innovative Science and Technology Initiative for Security, established by the Acquisition, Technology & Logistics Agency (ATLA), Japan Ministry of Defense. Development Background Wireless data traffic from mobile communications has increased dramatically over the last few years, and with the spread of 5G and IoT devices it is predicted to increase at an annual growth rate of 1.5 times until the year 2020. In order to build this sort of high capacity next-generation wireless communications network, attention has been focused on wireless communication technology using the high frequency W-band. The range of frequencies that can be used in the W-band is very broad, and because communication speed can be rapidly increased in this band, it is well-suited for this kind of high bandwidth wireless communication. Conventional wireless communications technology, has allowed for performance of several Gbit/s over distances of several kilometers, but achieving an even greater increase in wireless communication distance and capacity utilizing the W-band demands further increases to the output of power amplifiers to boost signals during transmission. Issues To increase distance and capacity, it will be necessary to expand the frequency bandwidth that can be amplified while simultaneously supporting modulation methods that can transmit more information within the same frequency bandwidth, and a strong requirement is to have less distortion when the signal is amplified. Another pursuit is keeping in check the energy consumption of communication systems that accompanies greater distances and capacities, and the improved energy efficiency in power amplifiers.In order to both increase the distance and capacity of wireless communications and decrease energy consumption with indium-aluminum-gallium-nitride (InAlGaN) HEMTs, Fujitsu has developed two technologies that effectively reduce internal resistance and current leakage. Features of the newly developed technologies are as follows: Technology to reduce internal resistance Fujitsu has developed device technology that can reliably reduce resistance to one tenth that of previous technology when current flows between the source or drain electrodes and the GaN-HEMT device. The technology utilizes a manufacturing process that embeds GaN plugs directly below the source and drain electrodes, which generate electrons at high densities (fig. 1). It is necessary to transport the electrons that come from the source electrode to the two dimensional electron gas field as smoothly as possible. The structure of the previous technology causes the electron supply layer to become a barrier, however, and internal resistance increases between the source electrode and the two dimensional electron gas. By applying this new technology, Fujitsu succeeded in running high currents through the transistor with significantly less resistance (fig. 2). Technology to control current leakageA current leakage occurs when the two dimensional electron gas, which moves at high speed on the boundary at the top of the channel layer, takes a detour below the gate when the transistor is in its off-state. This leakage causes deterioration in the operational performance of the power amplifier. Normally, it is possible to reduce current leakage by placing a barrier layer beneath the channel layer, but in that case the amount of two dimensional electron gas also decreases, and leads to a reduction of the drain current. This new technology maintains high drain currents by effectively distributing indium-gallium-nitride (InGaN) to create a barrier layer below the channel layer. This reduces electron detours during operation, successfully providing significant reductions in current leakage(just see the fist and second picture).Effects The previous world record for power amplifier output density in the W-band for transmitters was 3.6 watts per millimeter of gate width with technology developed by Fujitsu Laboratories. This has improved significantly with the newly developed technology, which delivers power output of 4.5 watts per millimeter of gate width for a power amplifier designed to operate at 94GHz. In addition, this new technology achieved a reduction in energy consumption of 26% compared to the previous technology through a reduction in current leakage. It is anticipated that the use of this power amplifier will allow the achievement of high capacity, long distance wireless communications between two connected systems at different locations at over 10Gbit/s and at distances greater than 10km.Fujitsu aims to apply this technology broadly to the development of power amplifiers for purposes that call for wireless communications that offer long range and higher capacity, while offering easier installation than fiber optics. The goal is to commercialize this technology in high speed wireless communication systems by 2020, with an aim to employ it in such situations as a method of restoring communications when fiber optic cables have been severed by natural disasters or as a way of setting up temporary communications infrastructure when holding events.  Article provide by FujitsuArticle edited by kynix

SummaryAs we all known,better knowledge of the absorption and scattering of light inside the LED,the performance of white LEDs can be improved.Yeah,LEDs can be made even more efficient and powerful.When in May,2017,researchers who from the University of Twente and Philips Lighting have developed a new method which can lead to efficiency improvement and powerful design tools. They found a detailed way to describe the light that stays inside the LED by absorption and scattering. This is very valuable information for the design process. The Theory about Light Sources From relatively weak light sources to strong lights at home and in cars, for example: since the blue and white LED were invented, we've seen a rapid development in possible applications. Low energy consumption and long lifetime are major advantages over existing lighting solutions. White LEDs consist of a semiconductor emitting blue light, with on top of that phosphor plates that turn the blue light into yellow. What we see then, is white light. The light will be scattered by the phosphor particles, but it is absorbed as well. What part of the light will exit the LED, is not easy to predict. Unless you look at absorption and scattering in another way, according to Maryna Meretska and her colleages. Theory from astronomy helps. Good Prediction is Difficult What makes good prediction particularly difficult: some of the light is absorbed, but re-emitted in another colour. One way is trying to define all possible light rays, and use a lot of computing time to get a result. This doesn't give much insight in what is actually happening. A theory that is often used for light propagation in a LED, is diffusion theory. In strongly absorbing media, however, this approach isn't valid anymore. Meretska therefore has built a setup to collect all the light around the phosphor plates, in the whole visual spectrum. Based on this, absorption and scattering can be deduced using the radiative transfer equation, well known in astronomy.  This results in a full description of light propagation inside and outside the phosphor plates. Compared to a description using diffusion theory, the absorption level is up to 30 percent higher. At the same time, the method is about 17 times faster than the numerical approach. ConclusionThis new insights leaded to powerful and predictive tools for LED designers.They help in further improving the efficiency and overall performance.The research has been done in the Complex Photonic System group of UT's MESA+Institute for Nanotechnology,together with Philips Lighting in Eindhoven. The University of Twente has a strong concentration of research groups and facilities within the rapidly growing field of photonics.  Article provided by University of TwenteArticle edited by kynix 

SummaryFor years,people had treated the poor conductivity of organics as an unavoidable fact,and this shows that that is no always the case. Said Stephen Forrest,the Peter A. Franken Distinguished University Professor of Engineering and Paul G. Goebel Professor of Engineering at U-M, who led the research,which is  a way to coax electrons to travel much further than was previously thought possible in the materials often used for organic solar cells and other organic semiconductors under the condition of pushing cheap,ubiquitous solar power closer to reality. The fatal weakness of organic material may adjust its conductivityUnlike the inorganic solar cells widely used today, organics can be made of inexpensive, flexible carbon-based materials like plastic. Manufacturers could churn out rolls of them in a variety of colors and configurations, to be laminated unobtrusively into almost any surface. Organics’ notoriously poor conductivity, however, has slowed research. Forrest believes this discovery could change the game.  The team showed that a thin layer of fullerene molecules—the curious round carbon molecules also called Buckyballs—can enable electrons to travel up to several centimeters from the point where theyre knocked loose by a photon. That’s a dramatic increase; in today's organic cells, electrons can travel only a few hundred nanometers or less. But organic materials have much looser bonds between individual molecules, which can trap electrons. This has long been an Achilles’ heel of organics, but the new discovery shows that it may be possible to tweak their conductive properties for specific applications. The ability to make electrons move more freely in organic semiconductors The ability to make electrons move more freely in organic semiconductors could have far-reaching implications. For example, the surface of today's organic solar cells must be covered with a conductive electrode that collects electrons at the point where they’re initially generated. But freely moving electrons can be collected far away from their point of origination. This could enable manufacturers to shrink the conductive electrode into an invisible grid, paving the way for transparent cells that could be used on windows and other surfaces. “This discovery essentially gives us a new knob to turn as we design organic solar cells and other organic semiconductor devices,” said Quinn Burlingame, a U-M electrical engineering and computer science graduate researcher and author on the study. “The possibility of long-range electron transport opens up a lot of new possibilities in device architecture.” Burlingame says that the initial discovery of the phenomenon came as something of an accident as the team was experimenting with organic solar cell architecture in hopes of boosting efficiency. Using a common technique called vacuum thermal evaporation, they layered in a thin film of C60 fullerenes—each made of 60 carbon atoms—on top of an organic cell's power-producing layer, where the photons from sunlight knock electrons loose from their associated molecules. On top of the fullerenes, they put another layer to prevent the electrons from escaping. They discovered something they’d never seen before in an organic—electrons were skittering unfettered through the material, even outside the power-generating area of the cell. Through months of experimentation, they determined that the fullerene layer formed what's known as an energy well—a low-energy area that prevents the negatively charged electrons from recombining with the positive charges left behind in the power-producing layer.“You can imagine an energy well as sort of a canyon—electrons fall into it and can’t get back out,” said Caleb Cobourn, a graduate researcher in the U-M Department of Physics and an author on the study. “So they continue to move freely in the fullerene layer instead of recombining in the power-producing layer, as they normally would. It's like a massive antenna that can collect an electron charge from anywhere in the device.”Forrest cautions that widespread use of the discovery in applications like solar cells is theoretical at this point. But, he is excited by the discovery’s larger implications for understanding and exploiting the properties of organic semiconductors. “I believe that ubiquitous solar power is the key to powering our constantly warming and increasingly crowded planet, and that means putting solar cells on everyday objects like building facades and windows,” Forrest said. “Technology like this could help us produce power in a way that’s inexpensive and nearly invisible.” The study is titled “Centimeter-Scale Electron Diffusion in Photoactive Organic Heterostructures.” The research was supported by the U.S. Department of Energy SunShot Program and by the Air Force Office of Scientific Research.    Article from University of MichiganArticle edited by kynix 

SummaryAn innovative new method to engineer computer chips more easily and cheaper than conventioanl methods have been developed by researchers who from the University of Exeter.This new technique to produce cutting-edge,versatile microchips could revolutionize the speed,efficiency and capability of the next-gen of computers.About the researchThe discovery could revolutionise the production of optoelectronic materials – or devices that produce, detect and control light – which are vital to the next generation of renewable energy, security and defence technologies, the researchers said.Dr Anna Baldycheva, from Exeter's Centre for Graphene Science and author of the paper said:"This breakthrough will hopefully lead to a revolution in the development of vital new materials for computer electronics. The work provides a solid platform for the development of novel next-generation optoelectronic devices. Additionally, the materials and methods used are extremely promising for a wide range of further potential applications beyond the current devices." This innovative new research focused on developing a versatile,multi-functional technology to significantly enhance future computing capabilities. The team used microfluidics technology, which uses a series of minuscule channels in order to control the flow and direction of tiny amounts of fluid. For this research, the fluid contains graphene oxide flakes,that are mixed together in the channels, to construct the chips.While the graphene oxide flakes are two-dimensional- consisting of length and width only- the research team used a new sophisticated light-based system to drive the assembly of the three-dimensional chip structures.Crucially, the research team have analysed their methodology to not only confirm the technique is successful, but also to provide a blueprint for others to use to help manufacture the chips. "We are very excited about the potential of this breakthrough and look forward to seeing where it can take the optoelectronics industry in the future." added by professor Monica Craciun, co-author of the paper and Associate Professor of Nanoscience at Exeter.  This article provide by University of Exeter,and the research is  published in the respected journal Scientific Reports.Article edited by kynix. 

CCD image sensors still remain preferable in some specialised application.Today I would like to talk something about CMOS image sensor technology. As the development of image sensor,CMOS technology is widely used in most machine vision applications.What's excited,perhaps as the concepts behind industry 4.0 become adopted more broadly--the need for mre capable vision systems has grown sharply. This is a video of CCD vs CMOS sensors Catalog   Historical and modern CMOS Improve productivity, support high bandwidth   readout Inherent flexible available About the high resolution Design the right products Conclusion FAQ Machine vision systems use images to gather information on a system or process and to then make decisions based on the image captured.While such systems are dependent upon lighting and software,the camera-and the image sensor within it-is the key component in the overall operation of the system,as well as the ability to improve manufacturing quality and increase productivity.At a high-level,a typical machine vision application involves som combinaton of basic measurement,counting or inspection functions.Objects may be assessed to confirm the number of objects present,to determine the number and size of features or their quality level.So machine vision could be used to not only determine that the proper number of holes have been drilled into an item, but also to verify the spacing and shape of each hole. Similarly, the location of an object may be determined in order for it to be picked up by a robot arm or to determine whether a feature is in the correct place. Other functions include reading a barcode, performing character recognition or measuring the level of a fluid.So machine vision could be used to not only determine that the proper number of holes have been drilled into an item, but also to verify the spacing and shape of each hole. Similarly, the location of an object may be determined in order for it to be picked up by a robot arm or to determine whether a feature is in the correct place. Other functions include reading a barcode, performing character recognition or measuring the level of a fluid.   Historical and modern CMOS Historically, machine vision systems have required CCD image sensors because of their high image quality and performance.  Today, however, CMOS image sensors have jumped to the forefront for many machine vision applications. Advances in CMOS pixel design have made the imaging quality available from this platform sufficient for a variety of different end uses.Modern CMOS image sensor platforms, such as that used in ON Semiconductor’s PYTHON family, are based on a global shutter pixel design that enables the capture of moving objects without the introduction of motion artefacts. In-pixel correlated double sampling provides low readout noise, while on-chip fixed pattern noise correction helps preserve image quality. Combined with a 10bit A/D converter and a dynamic range of 60dB, these features allow machine vision systems to leverage the intrinsic advantages of a CMOS platform in their operation.   Improve productivity, support high bandwidth readout With many machine vision applications looking to operate at ever higher speeds in order to increase productivity, image sensors must support high bandwidth readout. The output architecture of the CMOS platform enables this as additional digital outputs can be added to increase the available bandwidth. For example, the use of up to 32 separate LVDS outputs enables high resolution PYTHON devices to realise bandwidths that exceed those of modern computer interfaces, including 10Gbit Ethernet or USB 3.1. The ability to output at up to 80frame/s from a 25Mpixel device is well beyond the capabilities of standard CCD designs. Inherent flexible available The inherent flexibility available in CMOS output designs allows the frame rate to be further increased when operating in Region of Interest (ROI) mode, where only a portion of the image sensor array is read out. With proper design considerations, the speed increase when operating in this manner can scale by both the x and y dimensions of the ROI, enabling faster frame rates than can be realised when using a more standard CMOS output design, which only scales the x dimension. Consider the frame rates from the PYTHON 5000 image sensor compared to theoretical frame rates from a similar 5Mpixel sensor using a standard CMOS output. At full resolution, both designs would provide approximately 100frame/s, but when reading out a 1280 x 720 pixel ROI, the the PYTHON device’s frame rate increases to almost 600frame/s, while the standard output design would increase to only 300frame/s. This can be an important differentiator.    About the high resolution While high resolution can provide finer detail, this must be balanced by making sure that too much information is not captured, which would slow data processing. In addition to having the right number of pixels, they need to be in the appropriate aspect ratio for the application. For example, an aspect ratios of 1:1 is often used in pick and place applications to maximise image capture across the full field of view. Different spectral sensitivities, such as colour, monochrome and extended near infrared (NIR), may also be required to optimise the imaging system for the application. In order to do this, a camera manufacturer will look for an integrated family of image sensor products that includes multiple resolution nodes and colour options to support a portfolio of products.The PYTHON family has more than 40 options, with resolutions ranging from VGA to more than 25Mpixel. These devices are available in multiple configurations, including monochrome, Bayer Color and extended NIR sensitivities. Selected devices are available in low-power configurations or with removable tape to protect the image sensor during the camera assembly process.   Design the right products Avent Silica offers a range of evaluation kits to help designers understand the performance available from the PYTHON family of image sensors.These kits include an image sensor,the appropriate sensor headboard,FPGA evaluation board and software and accessories.The Flexible design also allows the evaluation hardware to be use with other PYTHON devices by purchasing additional image sensors.After identifying the most appropriate image sensor, designers then need to consider the remainder of the camera design. Complementary products from ON Semiconductor include embedded boards, power and signal chain components that allow engineers to choose between modular solutions and the flexibility of a discrete design. If a machine vision system needs to be brought to market quickly, it may not be possible to build it from the ground up. For those applications, Avnet Silica products such as the PYTHON-1300-C camera module. Based on the PYTHON 1300 colour image sensor and featuring a 0.5in SXGA CMOS image sensor with a resolution of 1280 x 1024 pixels, the module can be combined with Avnet Silica’s MicroZed Embedded Vision Carrier Card and the Smart Vision Development Kit to provide a complete hardware design, leaving the designer to only write the application software. Conclusion Because of the combination of image quality,bandwidth,image flexiblity and configuration flexiblity available from MOS image sensors has accelerated adoption of this technology in machine vision applications.What's celebrating,The imaging capabilities of such devices has ushered in a new level of performance and functionality for industrial imaging and CMOS sensor based imaging is now suitable for use in almost every type of design.   FAQ   1. How does a CMOS image sensor work? Unlike CCD sensors that use high-voltage analog circuits, CMOS sensors employ a smaller digital circuitry that uses less power, and are in principle free from smear (vertical white streak in the image taken under bright light) and blooming (corruption of images such as white spots).   2. Which sensor is better CCD or CMOS? CMOS sensors have thousands. This means that CMOS cameras can read out incredibly fast, even 100X faster than a comparable CCD. For long-exposure applications that is not so important, but it is especially important for video cameras.   3. Is CMOS a full frame sensor? "Full frame" is a description of sensor size, sort of... "CMOS" is a name for semiconductor technology used to make sensors. So, they are definitely different, and not comparable.   4.What is CMOS sensor type? A CMOS sensor is an electronic chip that converts photons to electrons for digital processing. CMOS (complementary metal oxide semiconductor) sensors are used to create images in digital cameras, digital video cameras and digital CCTV cameras.   5. What is the function of image sensor? An image sensor is a device that allows the camera to convert photons – that is, light – into electrical signals that can be interpreted by the device. The first digital cameras used charge-coupled devices, facilitating movement of the electrical charge through the device so it could be modulated.   6. What is difference between CCD and CMOS? The biggest difference is that CCD sensors create high quality images with low noise (grain). CMOS images tend to be higher in noise. CCD sensors are more sensitive to light. CMOS sensors need more light to create a low noise image at proper exposure.   7. What CCD means? Charged Coupled Device. Stands for "Charged Coupled Device." CCDs are sensors used in digital cameras and video cameras to record still and moving images. The CCD captures light and converts it to digital data that is recorded by the camera. For this reason, a CCD is often considered the digital version of film.     8. What is CCD and CMOS? CCD (charge coupled device) and CMOS (complementary metal oxide semiconductor) image sensors are two different technologies for capturing images digitally. Each has unique strengths and weaknesses giving advantages in different applications.   9. Is CMOS sensor good? CMOS sensors traditionally have lower quality, lower resolution and lower sensitivity. CMOS sensors are just now improving to the point where they reach near parity with CCD devices in some applications. CMOS cameras are usually less expensive and have great battery life.   10. How does a CCD work? Fundamentally, a charge coupled device (CCD) is an integrated circuit etched onto a silicon surface forming light sensitive elements called pixels. Photons incident on this surface generate charge that can be read by electronics and turned into a digital copy of the light patterns falling on the device.  

SummaryA digital temperature sensor IC which offers accurate measurements in the temperature range -20 to 10°C has been introduced by ams. The performance of the AS6200C makes it easier for designers of refrigerators and data loggers in cold-chain storage equipment to meet demanding targets for system-level accuracy. The AS6200C’s measurements are accurate to ±0.2°C between -20°C and 10°C, the temperature range over which storage equipment for perishable goods operates.  AS6200C Sensor ICAS6200C sensor's accuracy is guaranteed over the device's supply voltage range of 1.8~3.6V. In temperature control and temperature logging applications, the total error budget is made up of multiple components. By minimising the error at the point of measurement, the designer gains extra headroom for other error and noise sources, such as the heat generated by board-mounted com-ponents. The use of the highly accurate AS6200C gives the designer more flexibility to modify other elements of the system design while keeping total error below a specified maximum level. The AS6200C integrates a sensor front end, 12-bit analogue-to-digital converter and digital logic in a small WL-CSP package. It provides a digital output over an I2C interface to any host microcontrol-ler. The device performs on-board digital signal processing, which means that it needs no user calibration, and its linearised output requires no compensation by an external microcontroller. The AS6200C is intended for use in equipment for storing and transporting food, pharmaceuticals, flowers and other perishable goods, as well as in domestic and commercial refrigerators. It is well suited to data loggers that comply with the EN12830:1999 class 1 standard.The new device extends the ams family of small, accurate digital temperature sensor ICs, joining the AS6200 sensor, which achieves peak accuracy between 0 and 65°C. “The AS6200C offers the market a unique combination of small size - its footprint is only 1.5mm2 - very high accuracy over the cold-chain monitoring and storage temperature range, and a convenient digital output requiring no calibration or linearisation. It provides a new example of the value of the low noise, high sensitivity, high linearity semiconductor technology underlying the outstanding performance of ams' sensor solution products,” said Nikolai Haslebner, Marketing Manager at ams.