The Kynix Components

CatalogProduct OverviewIRF540 Related Video IntroductionIRF540 CAD ModelsIRF540 Internal Schematic DiagramIRF540 Test CircuitsIRF540 FeaturesIRF540 ApplicationsIRF540 DatasheetIRF540 SpecificationsIRF540 ManufacturerUsing WarningIRF540 FAQ Product OverviewThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. IRF540 Related Video IntroductionIRF540 Video Description: Hello friends, In this video, you are going to know about IRF series MOSFET. IRF series MOSFET is more useful for switching heavy voltage applications using the small gate current. I have showed a small application for controlling a motor with a small base current using the proteus simulation software. IRF540 is an N-Channel MOSFET used for switching application. This MOSFET operates on enhancement mode. This mosfet is used in all kind of daily life applications like regulators, high speed power switching drivers, relay drivers and so on... This mosfet is also used for amplification processes. IRF540 CAD ModelsFigure: IRF540 PCB Symbol  Figure: IRF540 Footprint  Figure: IRF540 3D Models IRF540 Internal Schematic DiagramFigure: IRF540 Internal Schematic Diagram IRF540 Test CircuitsFigure: IRF540 Unclamped Inductive Load Test Circuit  Figure: IRF540 Switching Times Test Circuits For Resistive Load  Figure: IRF540 Gate Charge Test Circuit  Figure: IRF540 Test Circuit For Inductive Load Switching And Diode Recovery Times IRF540 Features■ Typical RDS(on) = 0.055Ω■ Exceptional dv/dt capability■ 100% avalanche tested■ Low gate charge■ Application oriented characterization IRF540 Applications■ High-efficiency dc-dc converters■ UPS and motor control IRF540 DatasheetYou can download the datasheet from the link given below:IRF540 Datasheet IRF540 SpecificationsTypeDescriptionCategoryDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleMfrSTMicroelectronicsSeriesSTripFET™ IIPackageTubePart StatusObsoleteFET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C22A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VRds On (Max) @ Id, Vgs77mOhm @ 11A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs41 nC @ 10 VVgs (Max)±20VInput Capacitance (Ciss) (Max) @ Vds870 pF @ 25 VPower Dissipation (Max)85W (Tc)Operating Temperature-55°C ~ 175°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-220Package / CaseTO-220-3Base Product NumberIRF5 IRF540 ManufacturerSTMicroelectronics is a French-Italian multinational electronics and semiconductors manufacturer headquartered in Plan-les-Ouates near Geneva, Switzerland. The company resulted from the merger of two government-owned semiconductor companies in 1987: "Thomson Semiconducteurs" of France and "SGS Microelettronica" of Italy. It is commonly called "ST", and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in the Canton of Geneva, the holding company, STMicroelectronics N.V. is incorporated in the Netherlands. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. IRF540 FAQWhat is IRF540?IRF540 is an N-Channel powered MOSFET used for very fast switching operations as well as for amplification processes. It operates in enhancement mode. Its input impedance is quite high as compared to the general transistor so, its a lot sensitive in comparison to them. What are power MOSFETs used for?Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. What is N-channel Mosfet?A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. 

DescriptionMMBTA28 is designed for applications requiring extremely high current gain at collector currents to 500 mA.CatalogDescriptionMMBTA28 ECAD ModelMMBTA28 Documents and MediaMMBTA28 ParametersMMBTA28 Package InformationMMBTA28 Environmental and Export ClassificationsMMBTA28 Popularity by RegionMMBTA28 Market Price AnalysisMMBTA28 FFF EquivalentsMMBTA28 Functional EquivalentsMMBTA28 ECCN and UNSPSCProduct ManufacturerOrdering & QuantityMMBTA28 ECAD Model MMBTA28 Symbol  MMBTA28 Footprint  MMBTA28 3D Model MMBTA28 Documents and MediaDatasheetsMMBTA28, PZTA28Environmental InformationMaterial Declaration MMBTA28PCN Design/SpecificationMold Compound 08/April/2008Logo 17/Aug/2017PCN PackagingBinary Year Code Marking 15/Jan/2014Mult Devices 24/Oct/2017MMBTA28 ParametersBase Product NumberMMBTA28BrandON Semiconductor / FairchildCategoryDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - SingleCollector- Base Voltage VCBO80 VConfigurationSingleCurrent - Collector (Ic) (Max)800 mACurrent - Collector Cutoff (Max)500nADC Collector/Base Gain hfe Min10000DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5VEmitter- Base Voltage VEBO12 VFrequency – Transition125MHzHeight0.94 mmLength2.92 mmManufacturerON SemiconductorMaximum Collector Cut-off Current0.1 uAMaximum DC Collector Current0.8 AMaximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 CMounting StyleSMD/SMTMounting TypeSurface MountOperating Temperature-55°C ~ 150°C (TJ)Part StatusActivePower – Max350 mWProduct TypeDarlington TransistorsSeriesMMBTA28Series-SubcategoryTransistorsTransistor PolarityNPNTransistor TypeNPN – DarlingtonUnit Weight0.001552 ozVce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mAVoltage - Collector Emitter Breakdown (Max)80 VWidth1.4 mmMMBTA28 Package InformationMMBTA28 Environmental and Export ClassificationsAttributeDescriptionRoHS StatusROHS3 CompliantMoisture Sensitivity Level (MSL)1 (Unlimited)MMBTA28 Popularity by RegionMMBTA28 Market Price AnalysisMMBTA28 FFF EquivalentsPart NumberDescriptionManufacturerMMBTA28-7Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3Diodes IncorporatedMMBTA28D87ZSmall Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, SiliconON SemiconductorMMBTA28_NLSmall Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-3Fairchild Semiconductor CorporationMMBTA28NPN Darlington Transistor, 3000-REELON SemiconductorMMBTA28-7-FSmall Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3Diodes IncorporatedMMBTA28/L99Z800mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236ABTexas InstrumentsMMBTA28-13-FSmall Signal Bipolar TransistorDiodes IncorporatedMMBTA28 Functional EquivalentsPart NumberDescriptionManufacturerCMPTA29Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3Central Semiconductor Corp CMPTA29TR13LEADFREESmall Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon,Central Semiconductor CorpMMBTA28/L99Z800mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236ABTexas InstrumentsMMBTA28-7-FSmall Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3Diodes IncorporatedMMBTA28D87ZSmall Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, SiliconON SemiconductorMMBTA28-13-FSmall Signal Bipolar TransistorDiodes IncorporatedMMBTA28NPN Darlington Transistor, 3000-REELON SemiconductorMMBTA28-7Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3Diodes IncorporatedMMBTA28_NLSmall Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-3Fairchild Semiconductor CorporationCMPTA29TRLEADFREESmall Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon,Central Semiconductor CorpMMBTA28 ECCN and UNSPSCDescriptionValueECCNEAR99HTSN8541210095SCHEDULE B8541210080Product ManufacturerON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Product OverviewLTM4622 is a complete dual 2.5 A step-down switching mode μModule (micromodule) regulator in a tiny ultrathin 6.25 mm × 6.25 mm × 1.82 mm LGA package. Included in the package are the switching controller, power FETs, inductor, and support components. Operating over an input voltage range of 3.6 V to 20 V, the LTM4622 supports an output voltage range of 0.6 V to 5.5 V, set by a single external resistor. Its high efficiency design delivers dual 2.5 A continuous, 3 A peak, output current. Only a few ceramic input and output capacitors are needed. The LTM4622 supports selectable Burst Mode operation and output voltage tracking for supply rail sequencing. Its high switching frequency and current mode control enable a very fast transient response to line and load changes without sacrificing stability. Fault protection features include input overvoltage, output overcurrent, and overtemperature protection. The LTM4622 is RoHS-compliant with Pb-free finish. This blog will introduce LTM4622 systematically from its features, pinout to its specifications, applications, also including LTM4622 datasheet and so much more. CatalogProduct OverviewLTM4622 FeaturesLTM4622 PinoutLTM4622 ApplicationsLTM4622 Block DiagramLTM4622 Typical ApplicationsLTM4622IY SpecificationLTM4622 ManufacturerLTM4622 DatasheetUsing WarningsLTM4622 FAQ LTM4622 FeaturesComplete solution in <1 cm2Wide input voltage range: 3.6 V to 20 V3 V input compatible with VIN tied to INTVCC6 V to 5.5 V output voltageDual 2.5 A DC, 3 A peak output current±5%  maximum total output voltage regulation error over load, line, and temperatureCurrent mode control, fast transient responseExternal frequency synchronizationMultiphase parallelable with current sharingOutput voltage tracking and soft-start capabilitySelectable Burst Mode®  operationOvervoltage input and overtemperature protectionPower good indicators25 mm × 6.25 mm × 1.82 mm LGA package LTM4622 PinoutThe following figure is the diagram of LTM4622 pinout. LTM4622 Pinout1 LTM4622 Pinout2 LTM4622 ApplicationsGeneral purpose point of load conversionTelecom, networking, and industrial equipmentMedical diagnostic equipmentTest and debug systems LTM4622 Block DiagramThe following figure shows the block diagram of LTM4622. LTM4622 Block Diagram LTM4622 Typical ApplicationsThe following figures shows the typical applications of LTM4622, which shows the compact solution dimensions. 1.5v And 1v Dual Output Dc/dc Step-down Μmodule Regulator 1.5V Output Efficiency vs Load Current LTM4622IY SpecificationNumber of Outputs2Voltage - Input (Min)3.6VVoltage - Input (Max)20VVoltage - Output 10.6 ~ 5.5VVoltage - Output 20.6 ~ 5.5VVoltage - Output 3-Voltage - Output 4-Current - Output (Max)2.5A, 2.5AApplicationsITE (Commercial)FeaturesOCP, OTP, OVPOperating Temperature-40°C ~ 125°CEfficiency-Mounting TypeSurface MountPackage / Case25-PowerBBGA ModuleSize / Dimension0.25" L x 0.25" W x 0.10" H (6.3mm x 6.3mm x 2.4mm)Supplier Device Package25-BGA (6.25x6.25) LTM4622 ManufacturerLinear Technology and Analog Devices have joined together. Analog Devices is a world leader in the design, manufacture, and marketing of a broad portfolio of high performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits (ICs) used in virtually all types of electronic equipment. LTM4622 DatasheetYou can download this datasheet for LTM4622–Datasheet from the link given below:LTM4622 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. LTM4622 FAQWhat is the working principle of regulator?The main principle behind the working of such a regulator is that a large proportion of the change in supply or input voltage appears across the transistor and thus the utput voltage tends to remain constant. What is the difference between LDO and switching regulator?LDOs are low-noise alternatives to switching regulators. They are simpler to layout and tend to cost less. LDOs are sometimes used downstream from a switching regulator to further step down the voltage to a low level. In fact, some switching regulator components include an LDO on the output; see ADP5037 for an example. Why do we use switching regulators?A switching regulator can convert input direct current (DC) voltage to the desired direct current (DC) voltage. In an electronic or other device, a switching regulator takes the role of converting the voltage from a battery or other power source to the voltages required by subsequent systems. What is the advantage of switching regulator?Switching regulators are efficient because the series element is either fully conducting or switched off so it dissipates almost no power. Switching regulators are able to generate output voltages that are higher than the input voltage or of opposite polarity, unlike linear regulators. Is the IOUT ltm4622a compatible with SnPb?The LTM4622A is available with SnPb (BGA) or RoHS compliant terminal finish. 

 CatalogDescriptionCAD ModelsPin ConfigurationBlock DiagramFeaturesApplicationsDatasheetProduct AttributesUsing WarningDescriptionThe TPS7A02 is an ultra-small, ultra-low quiescent current low-dropout linear regulator (LDO) that can source 200 mA with excellent transient performance. The TPS7A02, with an ultra-low IQ of 25 nA, is designed specifically for applications where very-low quiescent current is a critical parameter. This device maintains low IQ consumption even in dropout mode to further increase the battery life. When in shutdown or disabled mode, the device consumes ultra-low, 3-nA IQ that helps increase the shelf life of the battery. The TPS7A02 has an output range of 0.8 V to 5.0 V available in 50-mV steps to support the lower core voltages of modern microcontrollers (MCUs). The TPS7A02 features a smart enable circuit with an internally controlled pulldown resistor that keeps the LDO disabled even when the EN pin is left floating and helps minimize the external components used to pulldown the EN pin. This circuit also helps minimize the current drawn through the external pulldown circuit when the device is enabled. The TPS7A02 is fully specified for TJ = –40°C to +125°C operation. CAD Models Figure: TPS7A0220PDQNR PCB Symbol  Figure: TPS7A0220PDQNR Footprint Pin Configuration Figure: TPS7A0220PDQNR Pin Configuration Block Diagram Figure: TPS7A0220PDQNR Block Diagram FeaturesUltra-low IQ: 25 nA (typ), even in dropoutShutdown IQ: 3 nA (typ)Excellent transient response (1 mA to 50 mA)        – < 10-µs settling time        – 100-mV undershootPackages:        – 1.0-mm × 1.0-mm X2SON        – SOT23-5        – 0.64-mm x 0.64-mm DSBGA (preview)Input voltage range: 1.5 V to 6.0 VOutput voltage range: 0.8 V to 5.0 V (fixed)Output accuracy: 1.5% over temperatureSmart enable pulldownVery low dropout: – 270 mV (max) at 200 mA (VOUT = 3.3 V)Stable with a 1-µF or larger capacitor ApplicationsWearables electronicsThermostats, smoke and heat detectorsGas, heat, and water metersBlood glucose monitors and pulse oximetersResidential circuit breakers and fault indicatorsBuilding security and video surveillance devicesEPOS card readers DatasheetTPS7A0220PDQNR-Datasheet Product AttributesProduct Category:LDO Voltage RegulatorsMounting Style:SMD/SMTPackage / Case:SON-4Output Voltage:2 VOutput Current:200 mANumber of Outputs:1 OutputPolarity:PositiveQuiescent Current:25 nAInput Voltage MAX:6 VInput Voltage MIN:1.5 VOutput Type:FixedMinimum Operating Temperature:- 40 ℃Maximum Operating Temperature:+ 125 ℃Dropout Voltage:450 mVSeries:TPS7A02Packaging:Cut TapePackaging:ReelProduct:LDO Voltage RegulatorsType:Ultra Low Quiescent LDOBrand:Texas InstrumentsDropout Voltage - Max:450 mVPSRR / Ripple Rejection - Typ:55 dBVoltage Regulation Accuracy:0.01Development Kit:MULTIPKGLDOEVM-823Line Regulation:5 mVLoad Regulation:50 mVOperating Supply Current:25 nAProduct Type:LDO Voltage RegulatorsFactory Pack Quantity:3000Subcategory:PMIC - Power Management ICsUnit Weight:0.000039 oz Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

Product OverviewThe SPF5189Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5189Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. This blog will introduce SPF5189Z systematically from its features, pinout to its specifications, applications, also including SPF5189Z datasheet and so much more. CatalogProduct OverviewSPF5189Z FeaturesSPF5189Z PinoutSPF5189Z ApplicationsSPF5189Z Evaluation Board LayoutSPF5189Z Circuit SchematicSPF5189Z PackageSPF5189Z SpecificationSPF5189Z ManufacturerSPF5189Z DatasheetUsing WarningsSPF5189Z FAQ SPF5189Z FeaturesUltra-Low Noise Figure=0.60dBat 900MHzGain=18.7dB at 900MHzHigh Linearity: OIP3=39.5dBmat 1960MHzP1dB=22.7dBm at 1960MHzSingle-Supply Operation: 5V atI DQ=90mAFlexible Biasing Options: 3V to5V, Adjustable Current Broadband Internal Matching SPF5189Z PinoutThe following figure is the diagram of SPF5189Z pinout. SPF5189Z Pinout SPF5189Z ApplicationsCellular, PCS, W-CDMA, ISM,WiMAX ReceiversPA Driver AmplifierLow Noise, High Linearity GainBlock Applications SPF5189Z Evaluation Board LayoutThe following figure is the diagram of SPF5189Z evaluation board layout. SPF5189Z Evaluation Board Layout SPF5189Z Circuit Schematic The following is the circuit diagram of SPF5189Z. SPF5189Z Circuit Schematic SPF5189Z PackageThe following diagram shows the SPF5189Z package. SPF5189Z Package SPF5189Z SpecificationProduct AttributeAttribute ValueManufacturer:QorvoProduct Category:RF AmplifierMounting Style:SMD/SMTPackage / Case:SOT-89-3Type:Low Noise AmplifiersTechnology:GaAsOperating Frequency:50 MHz to 4 GHzP1dB - Compression Point:22.7 dBmGain:12.8 dBOperating Supply Voltage:5 VNF - Noise Figure:0.8 dBOIP3 - Third Order Intercept:39.5 dBmOperating Supply Current:90 mAMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 85 CSeries:SPF5189ZInput Return Loss:18.5 dBMoisture Sensitive:YesNumber of Channels:1 ChannelPd - Power Dissipation:660 mWFactory Pack Quantity:1000Subcategory:Wireless & RF Integrated CircuitsTest Frequency:1960 MHzUnit Weight:0.017637 oz SPF5189Z ManufacturerQorvo is ready today with next-generation RF smarts and solutions to connect people, places, and things faster, further and more reliably. Qorvo partners with leading companies to create tomorrow’s connected world using core RF products and engineering expertise. Qorvo provides higher performance in more power-efficient networks and devices, to connect and protect mission critical defense systems and emerging commercial and consumer applications. Qorvo is all around you – making a better, more connected world possible. SPF5189Z DatasheetYou can download SPF5189Z datasheet from the link given below:SPF5189Z Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. SPF5189Z FAQHow do RF amplifiers work?An RF amplifier is actually a tuned amplifier that enables the input signal of broadcast or transmitted information to control an output signal. The RF amplifier uses frequency-determining networks to convert the input signal into an output signal that will provide the required response at a given frequency. Why is there a need for an RF amplifier at the input of a receiver?We need to amplify because the RF signals are usually at low voltages. Because of low voltage they are prone to external disturbances. Boosting the signals usually means increasing the voltage and decreasing the current and vice versa. What are the advantages of RF amplifier?The RF amplifier offers greater gain i.e. better sensitivity. It offers better selectivity and hence it has ability to select wanted signals from multiple input signals at the RF receiver. What is the difference between AF and RF?See also RF (radio frequency). AF (audio frequency) (also abbreviated af or a.f.) refers to alternating current ( AC ) having a frequency such that, if applied to a transducer such as a loudspeaker or headset, will produce acoustic waves within the range of human hearing. Where are RF amplifiers used?RF amplifiers that convert a low-power radio frequency signal into a larger signal for driving the antenna of a transmitter. They are used in a wide variety of applications, including wireless communication, TV Transmissions, Radar, and RF heating.

CatalogFeaturesMOSFET Maximum RatingsThermal CharacteristicsPackage Marking and Ordering InformationElectrical CharacteristicsTypical CharacteristicTest Circuits and WaveformsPSPICE Electrical ModelThermal ModelDatasheet PDF DownloadIRF640N FAQ Features• Ultra Low On-Resistance- rDS(ON) = 0.102Ω (Typ), VGS = 10V• Simulation Models- Temperature Compensated PSPICE® and SABER©Electrical Models- Spice and SABER© Thermal Impedance Models• Peak Current vs Pulse Width Curve• UIS Rateing Curve MOSFET Maximum RatingsSymbolParameterRatingsUnitsVDSSDrain to Source Voltage200VVGSGate to Source Voltage±20V IDDrain CurrentContinuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Pulsed 18 A13AFigure 4AEASSingle Pulse Avalanche Energy (Note 1)247mJPDPower dissipation150WDerate above 25oC1.0W/oCTJ, TSTGOperating and Storage Temperature-55 to 175oCThermal CharacteristicsRqJCThermal Resistance Junction to Case TO-2201.0oC/WRqJAThermal Resistance Junction to Ambient TO-22062oC/WPackage Marking and Ordering InformationDevice MarkingDevicePackageReel SizeTape WidthQuantity640NIRF640NTO-220ABTubeN/A50Electrical CharacteristicsSymbolParameterTest ConditionsMinTypMaxUnitsOff CharacteristicsBVDSSDrain to Source Breakdown VoltageID = 250mA, VGS = 0V200--VIDSS Zero Gate Voltage Drain CurrentVDS = 200V, VGS = 0V--25 mAVDS = 160VTC = 150o--250IGSSGate to Source Leakage CurrentVGS = ±20V--±100nAOn CharacteristicsVGS(TH)Gate to Source Threshold VoltageVGS = VDS, ID = 250mA2-4VrDS(ON)Drain to Source On ResistanceID = 11A, VGS = 10V-0.1020.15WgfsForward TransconductanceVDS = 50V, ID = 11A (Note 2)6.8--SDynamic CharacteristicsCISSInput Capacitance VDS = 25V, VGS = 0V,f = 1MHz-2200-pFCOSSOutput Capacitance-400-pFCRSSReverse Transfer Capacitance-120-pFQg(TOT)Total Gate Charge at 20VVGS = 0V to 20V VDD =100V ID = 22AIg = 1.0mA 117152nCQg(10)Total Gate Charge at 10VVGS = 0V to 10V-6483nCQg(TH)Threshold Gate ChargeVGS = 0V to 2V-57nCQgsGate to Source Gate Charge -9-nCQgdGate to Drain “Miller” Charge -24-nCSwitching  Characteristics  (VGS  = 10V)tONTurn-On Time  VDD = 100V, ID = 11A VGS = 10V, RGS = 2.5W--44nstd(ON)Turn-On Delay Time-10-nstrRise Time-19-nstd(OFF)Turn-Off Delay Time-23-nstfFall Time-5.5-nstOFFTurn-Off Time--46nsDrain-Source Diode CharacteristicsVSDSource to Drain Diode VoltageISD = 11A--1.3VtrrReverse Recovery TimeISD = 11A, dISD/dt = 100A/ms--251nsQRRReverse Recovered ChargeISD = 11A, dISD/dt = 100A/ms--1394nC Typical Characteristic  Test Circuits and Waveforms PSPICE Electrical ModelThermal Model  Datasheet PDF DownloadYou can download the datasheet from the link given below.IRF640N-Datasheet IRF640N FAQIs N channel faster than P-channel?The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. The N-channel transistor has lower on-resistance and gate capacitance for the same die area. What is N channel power MOSFET?The MOSFET formed in which the conduction is due to the channel of majority charge carriers called electrons. When this MOSFET is activated as ON this condition results in the maximum amount of the current flow through the device. This type of MOSFET is defined as N-channel MOSFET. What is the meaning of N channel?An N-Channel MOSFET is made up of an N channel, which is a channel composed of a majority of electron current carriers. The gate terminals are made up of P material. Depending on the voltage quantity and type (negative or positive) determines how the transistor operates whether it turns on or off.