The Kynix Components

CatalogGeneral DescriptionFeaturesMarking DiagramOrdering Information Absolute Maximum RatingsThermal CharacteristicsElectrical CharacteristicsTypical CharacteristicsMechanical Case OutlineBSS138 DatasheetBSS138 FAQ General DescriptionThese N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. BSS138 products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. BSS138 products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features0.22 A, 50 V♦ RDS(on) = 3.5  @ VGS = 10 V♦ RDS(on) = 6.0  @ VGS = 4.5 VHigh Density Cell Design for Extremely Low RDS(on)Rugged and ReliableCompact Industry Standard SOT−23 Surface Mount PackageThis Device is Pb−Free and Halogen Free Marking DiagramSS = Specific Device CodeM = Date Code*▪ = Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or position may vary depending upon manufacturing location. Ordering InformationDevicePackageShipping†BSS138,BSS138−GSOT−23−3(Pb−Free)3000 /Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Absolute Maximum Ratings TA = 25°C unless otherwise noted.SymbolParameterRatingsUnitVDSSDrain−Source Voltage50VVGSSGate−Source Voltage±20IDDrain Current – Continuous (Note 1)0.22ADrain Current – Pulsed (Note 1)0.88PDMaximum Power Dissipation (Note 1)0.36WDerate Above 25°C2.8mW/°CTJ, TSTGOperating and Storage Junction Temperature Range-55 to +150°CTLMaximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s300 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Characteristics TA = 25°C unless otherwise noted.SymbolParameterRatingsUnitRθJAThermal Resistance, Junction−to−Ambient (Note 1)350° C/W Electrical Characteristics TA = 25°C unless otherwise noted.SymbolParameterTest ConditionsMinTypMaxUnitOFF CHARACTERISTICSBVDSSDrain–Source Breakdown VoltageVGS = 0 V, ID = 250 µA50−−VΔVGS(th)/ΔTJBreakdown Voltage Temperature CoefficientID = 250μA, Referenced to 25℃−72−mV/℃IDSSZero Gate Voltage Drain CurrentVDS = 50 V, VGS = 0 V−−0.5µAVDS = 50 V, VGS = 0 V, TJ = 125℃−−5VDS = 30 V, VGS = 0 V−−100nAIGSSGate–Body LeakageVGS = ±20 V, VDS = 0 V−−±100ON CHARACTERISTICSVGS(th)Gate Threshold VoltageVDS = VGS, ID = 1 mA0.81.31.5VΔVGS(th)/ΔTJGate Threshold Voltage Temperature CoefficientID = 1 mA, Referenced to 25℃−–2−mV/℃RDS(on)Static Drain–Source On–ResistanceVGS = 10 V, ID = 0.22 A−0.73.5ΩVGS = 4.5 V, ID = 0.22 A−16ΩVGS = 10 V, ID = 0.22 A, TJ = 125℃−1.15.8 ID(on)On–State Drain CurrentVGS = 10 V, VDS = 5 V0.2−−AgFSForward TransconductanceVDS = 10 V, ID = 0.22 A0.120.5−SDYNAMIC CHARACTERISTICSCissInput CapacitanceVDS = 25 V, VGS = 0 V, f = 1.0 MHz−27−pFCossOutput Capacitance−13−pFCrssReverse Transfer Capacitance−6−pFRGGate ResistanceVGS = 15 mV, f = 1.0 MHz−9−ΩSWITCHING CHARACTERISTICStd(on)Turn–On Delay TimeVDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω−2.55nstrTurn–On Rise Time−918nstd(off)Turn–Off Delay Time−2036nstfTurn–Off Fall Time−714nsQgTotal Gate ChargeVDS = 25 V, ID = 0.22 A, VGS = 10 V−1.72.4nCQgsGate–Source Charge−0.1−nCQgdGate–Drain Charge−0.4−nCDRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSISMaximum Continuous Drain–Source Diode Forward Current−−0.22AVSDDrain–Source Diode Forward VoltageVGS = 0 V, IS = 0.44 A (Note 2)−0.81.4V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.1.RΘJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermalreference is defined as the solder mounting surface of the drain pins. RΘJA is guaranteed by design while RΘJA is determined by the user’s board design. a) 350°C/W when mounted on a minimum pad.2.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Typical Characteristics           Mechanical Case Outline NOTES:1.Dimensioning and tolerancing per ASME Y14.5M, 1994.2.Controlling dimension: millimeters.3.Maximum lead thickness includes lead finish.Minimum lead thickness is the minimum thickness of the base material.4.Dimensions d and e do not include mold flash,protrusions, or gate burrs.DIM MILLIMETERSINCHESMINNOMMAXMINNOMMAXA0.891.001.110.0350.0390.044A10.010.060.100.0000.0020.004b0.370.440.500.0150.0170.020c0.080.140.200.0030.0060.008D2.802.903.040.1100.1140.120E1.201.301.400.0470.0510.055e1.781.902.040.0700.0750.080L0.300.430.550.0120.0170.022L10.350.540.690.0140.0210.027HE2.102.402.640.0830.0940.104T0°−−−10°0°−−−10° BSS138 DatasheetYou can download the datasheet of BSS138 from the link given below:BSS138 Datasheet BSS138 FAQWhat is BSS138?The BSS138 is an SMD Package Logic Level N-Channel MOSFET with low on-state resistance (3.5Ω) and low input capacitance (40 pF). Adding to this the Mosfet can also switching at high speed of 20ns. Due to the low threshold voltage and high switching speed this Mosfet is commonly used in level shifter circuits. What is N-channel transistor?Channel MOSFET is a type of metal oxide semiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET). What is a logic level MOSFET?A logic level mosfet means that it is designed to turn on fully from the logic level of a microprocessor. The standard mosfet (IRF series etc) is designed to run from 10V. What is N-channel enhancement MOSFET?A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0). What is enhancement mode transistor?Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. 

Catalog DescriptionFeaturesApplicationsPin AssignmentsPin DescriptionsLogic DiagramFunction TableAbsolute Maximum RatingsRecommended Operating ConditionsElectrical CharacteristicsSwitching CharacteristicsOperating CharacteristicsParameter Measurement Information Marking Information74HC125 Datasheet74HC125 FAQ DescriptionThe 74HC125 provides provides four independent buffer gates with 3-state outputs. Each buffer has a separate enable pin that if driven with a high logic level places the corresponding output in the high impedance state. The device is designed for operation with a power supply range of 2.0V to 6.0V. FeaturesWide Supply Voltage Range from 2.0V to0VSinks or sources 4mA at VCC= 5VCMOS low powerconsumptionSchmitt Trigger Action at AllInputsESD Protection Exceeds JESD22200-V Machine Model (A115-A)2000-V Human Body Model(A114-A)Exceeds 1000-V Charged Device Model (C101C)Range of Package Options SO-14 andTSSOP-14Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)Halogen and Antimony Free. “Green” Device (Note3)Notes: 1.No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2.See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3.Halogen-and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. ApplicationsGeneral Purpose LogicWide array of products suchas:PCs, Networking, Notebooks, NetbooksComputer Peripherals, Hard Drives, CD/DVDROMTV, DVD, DVR, Set Top Box Pin Assignments Pin DescriptionsPin NumberPin NameFunction11OEData Enable Input (active low)21AData Input31YData Output42OEData Enable Input (active low)52AData Input62YData Output7GNDGround83YData Output93AData Input103OEData Enable Input (active low)114YData Outp124AData Input134OEData Enable Input (active low)14VCCSupply Voltage Logic Diagram Function TableInputsOutputOEAYLHHLLLHXZ Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.)SymbolDescriptionRatingUnitESD HBMHuman Body Model ESD Protection2KVESD CDMCharged Device Model ESD Protection1KVESD MMMachine Model ESD Protection200VVCCSupply Voltage Range-0.5 to +7.0VVIInput Voltage Range note 3)-0.5 to +7.0VIIKInput Clamp Current VI < -0.5V or Vi > VCC +0.5V±20mAIOKOutput Clamp Current VO < -0.5V or VO > VCC +0.5V±20mAIOContinuous Output Current -0.5V < VO VCC +0.5V+/- 25mAICCContinuous Current Through VCC50mAIGNDContinuous Current Through GND-50mATJOperating Junction Temperature-40 to +150°CTSTGStorage Temperature-65 to +150°CPTOTTotal Power Dissipation500mWNotes:4.Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values.5.Input Voltage cannot exceed VCC to the extent the Maximum clamp current is exceeded. Recommended Operating Conditions (Note 6) (@TA = +25°C, unless otherwise specified.)SymbolParameterConditionsMinMaxUnitVCCSupply Voltage 2.06.0VVIInput Voltage 0VCCVVOOutput Voltage 0VCCVΔt/ΔVInput Transition Rise or Fall RateVCC = 2.0V 625ns/VVCC = 4.5V 140VCC = 6.0V 85TAOperating Free-Air Temperature -40+125°CNote: 6. Unused inputs should be held at VCC or Ground. Electrical Characteristics (@TA = +25°C, unless otherwise specified.)SymbolParameterTest ConditionsVCCTA = -40°C to +85°CTA = -40°C to +125°CUnitMinMaxMinMaxVIHHigh-level Input Voltage 2.0V1.5 1.5 V 4.5V3.15 3.15  6.0V4.2 4.2 VILLow-level Input voltage 2.0V 0.5 0.5V 4.5V 1.35 1.35 6.0V 1.8 1.8VOHHigh-level Output VoltageIOH = -20μA2.0V1.9 1.9 VIOH = -20μA4.5V4.4 4.4 IOH = -20μA6.0V5.9 5.9 IOH = -4.0mA4.5V3.84 3.7 IOH = -5.2mA6.0V5.34 5.2 VOLLow-level Output VoltageIOL = 20μA2.0V 0.1 0.1VIOL = 20μA4.5V 0.1 0.1IOL = 20μA6.0V 0.1 0.1IOL = 4mA4.5V 0.33 0.44IOL = 5.2mA6.0V 0.33 0.44IOZZ StateLeakage CurrentVO = 0 to 6.0VVI = GND or 6.0V6.0V ± 5.0 ± 10μAIIInput CurrentVI = GND to 5.5V6.0V ± 1 ± 1μAICCSupply CurrentVI = GND or VCC, IO = 06.0V 20 40μA Switching CharacteristicsSymbolParameterTest ConditionsVCCTA = +25°C-40°C to +85°C-40°C to +125°CUnitMinTyp.MaxMaxMaxtPDPropagation Delay AN to YNFigure 1 CL = 50 pF2.0V—30100125150ns4.5V—112025306.0V—9172126 tENEnable Time OEN to YNFigure 1 CL = 50 pF2.0V—41125155190ns4.5V—152531386.0V—12212632 tDISDisable Time OE to YNFigure 1 CL = 50 pF2.0V—41125155190ns4.5V—152531386.0V—12212632 ttTransition timeFigure 1 CL = 50 pF2.0V—14607590ns4.5V—51215186.0V—4101315 Operating Characteristics (@TA = +25°C, unless otherwise specified.)ParameterTest ConditionsVCC = 6VUnitTypCpdPower Dissipation Capacitance per Gatef = 1MHz22pFCIInput CapacitanceVI = VCC – or GND4pF Parameter Measurement Information TESTConditiontPLZ (see Notes D and E) tPZL(see Notes D and F)VloadVload VCCInputsVMVLOADCLRLV∆VItr/tf2.0V to 6.0VVCC≤3nsVCC/22 X VCC15,50 pF2 KΩ10% of VCC Notes: A.Includes test lead and test apparatus capacitance.B.All pulses are supplied at pulse repetition rate ≤ 1 MHz.C.The inputs are measured one at a time with one transition per measurement.  D.For the 3 state device tPLZand tPZL are the same as tPD.E.tPZLis measured at VM.F.tPLZis measured at VOL+V∆. Marking Information Part NumberPackage74HC125S14SO-1474HC125T14TSSOP-14 Package Outline Dimensions (All dimensions in mm.) SO-14DimMinMaxA1.471.73A10.100.25A21.45 TypB0.330.51D8.538.74E3.803.99e1.27 TypH5.806.20L0.381.27q0°8°All Dimensions in mm 74HC125 DatasheetYou can download the datasheet of 74HC125 from the link given below:74HC125 Datasheet74HC125 FAQWhat is 74HC125?The 74HC125 provides provides four independent buffer gates with 3-state outputs. Each buffer has a separate enable pin that if driven with a high logic level places the corresponding output in the high impedance state. The device is designed for operation with a power supply range of 2.0V to 6.0V. How and why tristate buffer is used?The Tri-state Buffer is used in many electronic and microprocessor circuits as they allow multiple logic devices to be connected to the same wire or bus without damage or loss of data. For example, suppose we have a data line or data bus with some memory, peripherals, I/O or a CPU connected to it. What is tri-state circuit?Three-state logic is a logic used in electronic circuits wherein a third state, the high-impedance state, is added to the original 1 and 0 logic states that a port can be in. This high-impedance state effectively removes the port from the circuit, as if it were not part of it. What is tri-state in microprocessor?Tristate means three states viz.Logic 0, Logic 1 and high impedance states. In high impedance state, the pin neither connected to supply nor to ground. Hence impedance at this pin is very high with respect to supply as well as ground. Some pins of 8085 have three states. Why do we use buffers in circuit?A buffer amplifier (sometimes simply called a buffer) is one that provides electrical impedance transformation from one circuit to another, with the aim of preventing the signal source from being affected by whatever currents (or voltages, for a current buffer) that the load may be produced with. 

Product OverviewThe AG302-63G is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. The AG302-63G consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG302-63G will work for other various applications within the DC to 6 GHz frequency range such as CATV and WiMAX. This blog will introduce AG302-63G systematically from its features, CAD models to its specifications, applications, also including AG302-63G datasheet and so much more. CatalogProduct OverviewAG302-63G FeaturesAG302-63G ApplicationsAG302-63G CAD ModelsAG302-63G Functional DiagramAG302-63G Circuit DiagramAG302-63G SpecificationAG302-63G VS AG302-63AG302-63G ManufacturerAG302-63G DatasheetUsing WarningsAG302-63G FAQ AG302-63G FeaturesDC to 6000 MHz5 dB gain @ 900 MHz+13.5 dBm P1dB @ 900 MHz+26 dBm OIP3 @ 900 MHzSingle voltage supplyInternally matched to 50 OhmRobust 1000V ESD, Class 1CLead-free / green / RoHS compliantSOT-363 package AG302-63G ApplicationsMobile InfrastructureCATV / FTTXWLAN / ISMRFIDWiMAX / WiBro AG302-63G CAD ModelsFollowings are AG302-63G Symbol, Footprint, and 3D Model. AG302-63G Symbol AG302-63G Footprint AG302-63G 3D Model AG302-63G Functional DiagramThe following figure is the functional diagram of AG302-63G. AG302-63G Functional Diagram AG302-63G Circuit DiagramFollowing is the circuit diagram of AG302-63G. AG302-63G Application Circuit AG302-63G SpecificationProduct AttributeAttribute ValueManufacturer:QorvoProduct Category:RF AmplifierMounting Style:SMD/SMTPackage / Case:SOT-363-6Type:Gain Block AmplifiersTechnology:InGaPOperating Frequency:0 Hz to 6 GHzP1dB - Compression Point:13.5 dBmGain:15.5 dBOperating Supply Voltage:4.23 VNF - Noise Figure:3.4 dBOIP3 - Third Order Intercept:26.5 dBmOperating Supply Current:35 mAMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 85 CPackaging:Cut TapePackaging:MouseReelPackaging:ReelBrand:QorvoMoisture Sensitive:YesProduct Type:RF AmplifierSubcategory:Wireless & RF Integrated CircuitsTest Frequency:900 MHzUnit Weight:0.049837 oz AG302-63G VS AG302-63 AG302-63G AG302-63Reach Compliance CodecompliantunknownECCN Code5A991.B Additional FeatureHIGH RELIABILITYHIGH RELIABILITYCharacteristic Impedance50 Ω50 ΩConstructionCOMPONENTCOMPONENTGain13.5 dB13.5 dBInput Power-Max (CW)10 dBm10 dBmJESD-609 Codee3e0Mounting FeatureSURFACE MOUNTSURFACE MOUNTNumber of Functions11Number of Terminals66Operating Frequency-Max6000 MHz6000 MHzOperating Temperature-Max85 °C85 °COperating Temperature-Min-40 °C-40 °CPackage Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage Equivalence CodeTSSOP6,.08TSSOP6,.08Power Supplies5 V5 VRF/Microwave Device TypeWIDE BAND LOW POWERWIDE BAND LOW POWERSurface MountYESYESTechnologyGAASGAASTerminal FinishMatte Tin (Sn) - annealedTin/Lead (Sn/Pb)Base Number Matches12 AG302-63G ManufacturerTriQuint Semiconductor was a semiconductor company that designed, manufactured, and supplied high-performance RF modules, components and foundry services. The company was founded in 1985 in Beaverton, Oregon before moving to neighboring Hillsboro, Oregon. In February 2014, Greensboro, North Carolina-based RF Micro Devices and TriQuint announced a merger in which the new company would be Qorvo, Inc., with the merger completed on January 1, 2015. AG302-63G DatasheetYou can download this datasheet for AG302-63G–Datasheet from the link given below:AG302-63G Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. AG302-63G FAQWhat is the use of buffer amplifier?A buffer amplifier (sometimes simply called a buffer) is one that provides electrical impedance transformation from one circuit to another, with the aim of preventing the signal source from being affected by whatever currents (or voltages, for a current buffer) that the load may be produced with. What is the purpose of a buffer amplifier stage in a transmitter?A buffer amplifier provides electrical impedance transformation from one circuit to the other circuit, to prevent the signal source from being affected by whatever currents that the load may be produced with. A master oscillator in the AM transmitter generates a stable sub harmonic carrier frequency. How transistor works as an amplifier?A transistor acts as an amplifier by raising the strength of a weak signal. The DC bias voltage applied to the emitter base junction, makes it remain in forward biased condition. ... Thus a small input voltage results in a large output voltage, which shows that the transistor works as an amplifier. 

CatalogMPX5100DP Product OverviewRelated Video IntroductionMPX5100DP CAD ModelsMPX5100DP Pin ConfigurationMPX5100DP Block DiagramMPX5100DP FeaturesMPX5100DP ApplicationsMPX5100DP Package DimensionsMPX5100DP DatasheetMPX5100DP SpecificationsMPX5100DP ManufacturerUsing Warning MPX5100DP Product OverviewModern monolithic silicon pressure sensor, the MPX5100DP piezoresistive transducer is specifically made for applications utilizing a microcontroller or microprocessor with A/D inputs. This single element, patented transducer uses bipolar processing, thin-film metallization, and advanced micromachining techniques to provide an exact, high-level analog output signal that is proportional to the applied pressure. Related Video IntroductionVideo Description: I use the MPX5010DP pressure sensor and a 3D printed venturi to build a prototype 2-channel air supply with fixed-ratio control.  This is part of my research for building an advanced updraft gasifier for low-quality biomass fuels.  Uses an Arduino for control, OpenSCAD for 3D design, and some steel wool! MPX5100DP CAD ModelsThe following figure is MPX5100DP CAD Models. Figure: PCB Symbol  Figure: Footprint  Figure: 3D Models MPX5100DP Pin ConfigurationThe following figure is MPX5100DP Pin Configuration.  Figure: Pin Configuration Pin NumberPin NameDescription1VOUTOutput voltage2GNDGround3VSVoltage supply4DNCDo not connect to external circuitry or ground.5DNCDo not connect to external circuitry or ground.6DNCDo not connect to external circuitry or ground.  MPX5100DP Block DiagramThe following figure is MPX5100DP Block Diagram. Figure: Block Diagram MPX5100DP FeaturesAvailable in absolute, differential and gauge configurationDurable epoxy unibody elementEasy-to-use chip carrier option2.5% maximum error over 0 to 85 °CIdeally suited for microprocessor or microcontroller-based systemsPatented silicon shear stress strain gauge MPX5100DP ApplicationsPatient monitoringProcess controlPump/motor controlPressure switchingWhite goods MPX5100DP Package DimensionsThe following figure is MPX5100DP Package Dimensions. Figure: Package Dimensions MPX5100DP DatasheetYou can download the datasheet from the link given below:MPX5100DP Datasheet MPX5100DP SpecificationsTypeDescriptionCategorySensors, TransducersPressure Sensors, TransducersMfrNXP USA Inc.SeriesMPX5100PackageTrayProduct StatusActiveApplicationsBoard MountPressure TypeDifferentialOperating Pressure14.5PSI (100kPa)Output TypeAnalog VoltageOutput0.2 V ~ 4.7 VAccuracy±2.5%Voltage - Supply4.75V ~ 5.25VPort SizeMale - 0.19" (4.93mm) Tube, DualPort StyleBarbedFeaturesTemperature CompensatedTermination StylePC PinMaximum Pressure58.02PSI (400kPa)Operating Temperature-40°C ~ 125°CPackage / Case6-SIP ModuleSupplier Device Package-Base Product NumberMPX5100MPX5100DP ManufacturerNXP Semiconductors develops solutions that make life simpler, better, and safer while enabling secure connectivity and infrastructure for a smarter future. NXP is promoting innovation in the secure connected car, end-to-end security & privacy, and smart connected solutions markets as the global leader in secure connectivity solutions for embedded applications. The organization, which has 45,000 employees across more than 35 nations, is built on more than 60 years of combined knowledge and expertise. NXP Semiconductor has purchased Freescale Semiconductor. Parts from Freescale Semiconductor are now included in the NXP family. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. 

Product OverviewThe STM32F405xx and STM32F407xx family is based on the high-performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 168 MHz. The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security. The STM32F405xx and STM32F407xx family incorporates high-speed embedded memories (Flash memory up to 1 Mbyte, up to 192 Kbytes of SRAM), up to 4 Kbytes of backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two APB buses, three AHB buses and a 32-bit multi-AHB bus matrix. This blog will introduce STM32F405RGT6 systematically from its features, pinout to its specifications, applications, also including STM32F405RGT6 datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionSTM32F405RGT6 FeaturesSTM32F405RGT6 PinoutSTM32F405RGT6 CAD ModelsSTM32F405RGT6 Block DiagramSTM32F405RGT6 Circuit SchematicSTM32F405RGT6 PackageSTM32F405RGT6 SpecificationSTM32F405RGT6 ManufacturerSTM32F405RGT6 DatasheetUsing WarningsSTM32F405RGT6 FAQ Related Video Introduction Video: STM32 ARM Microcontroller Bootloaders / Dfuse / ST link / Serial Flashloader STM32F405RGT6 Video Description: This video will cover three boot-loaders and the software used to upload a hex file to the STM32 family of ARM microcontrollers. This can be an upgrade upload or to program a blank device. STM32F405RGT6 FeaturesCore: ARM® 32-bit Cortex®-M4 CPU with FPU,Adaptive real-time accelerator (ARTAccelerator™) allowing 0-wait state executionfrom Flash memory, frequency up to 168 MHz,memory protection unit, 210 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSPinstructionsMemoriesUp to 1 Mbyte of Flash memoryUp to 192+4 Kbytes of SRAM including 64-Kbyte of CCM (core coupled memory) dataRAMFlexible static memory controller supportingCompact Flash, SRAM, PSRAM, NOR andNAND memoriesLCD parallel interface, 8080/6800 modesClock, reset and supply management– 1.8 V to 3.6 V application supply and I/Os– POR, PDR, PVD and BOR– 4-to-26 MHz crystal oscillator– Internal 16 MHz factory-trimmed RC (1%accuracy)– 32 kHz oscillator for RTC with calibration– Internal 32 kHz RC with calibrationLow-power operation– Sleep, Stop and Standby modes– VBAT supply for RTC, 20×32 bit backupregisters + optional 4 KB backup SRAM3×12-bit, 2.4 MSPS A/D converters: up to 24channels and 7.2 MSPS in triple interleavedmode2×12-bit D/A convertersGeneral-purpose DMA: 16-stream DMAcontroller with FIFOs and burst support STM32F405RGT6 PinoutThe following figure is the diagram of STM32F405RGT6 pinout. STM32F405RGT6 Pinout STM32F405RGT6 CAD ModelsThe followings are STM32F405RGT6 Symbol, Footprint, and 3D Model. STM32F405RGT6 Symbol STM32F405RGT6 Footprint STM32F405RGT6 3D Model STM32F405RGT6 Block DiagramThe following figure shows the block diagram of STM32F405RGT6. STM32F405RGT6 Block Diagram STM32F405RGT6 Circuit SchematicThe following is the circuit diagram of STM32F405RGT6. Compatible board design STM32F405RGT6 PackageThe following diagram shows the STM32F405RGT6package. STM32F405RGT6 Package STM32F405RGT6 SpecificationProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:ARM Microcontrollers - MCUSeries:STM32F405RGMounting Style:SMD/SMTPackage / Case:LQFP-64Core:ARM Cortex M4Program Memory Size:1 MBData Bus Width:32 bitADC Resolution:12 bitMaximum Clock Frequency:168 MHzNumber of I/Os:51 I/OData RAM Size:192 kBOperating Supply Voltage:1.8 V to 3.6 VMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 85 CDAC Resolution:12 bitData RAM Type:SRAMInterface Type:CAN, I2C, SDIO, I2S / SPI, UART / USART, USBMoisture Sensitive:YesNumber of ADC Channels:16 ChannelProcessor Series:STM32F40Product:MCU+FPUProgram Memory Type:FlashFactory Pack Quantity:960Supply Voltage - Max:3.6 VSupply Voltage - Min:1.8 VSTM32F405RGT6 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends. STM32F405RGT6 DatasheetYou can download STM32F405RGT6 datasheet from the link given below:STM32F405RGT6 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. STM32F405RGT6 FAQWhat is ARM MCU?The Arm® Cortex®-M group of processor cores is a series of cores optimized for power efficiency and deterministic operation. It is widely used in microcontrollers (MCUs) and can also be found embedded into multi-core microprocessors (MPUs). What are the advantages of ARM processor?The great advantage of ARM processors is that they are designed to have the lowest possible energy consumption while maintaining high processing power. Therefore, they are ideal processors for devices in which energy efficiency matters more than gross performance. Why is ARM so popular?ARM is the most popular processor, particularly used in portable devices due to its low power consumption and reasonable performance. ARM has got better performance when compared to other processors. The ARM processor is basically consisting of low power consumption and low cost.

CatalogFeatureApplicationStructureOutlineInner CircuitPackaging SpecificationAbsolute Maximum RatingCharacteristicMarkingCharacteristic CurvesDimensionUDZVTE-1736B DatasheetUDZVTE-1736B ManufacturerUsing WarningUDZVTE-1736B FAQ FeatureHigh reliabilitySmall mold type ApplicationVoltage regulation StructureSilicon Epitaxial Planar Outline Inner Circuit Packaging SpecificationPackingEmbossed TapeReel Size(mm)180Taping Width(mm)8Quantity(pcs)3000Taping CodeTE-17MarkingF5 Absolute Maximum Rating (Ta = 25℃)ParameterSymbolLimitsUnitPower dissipationPD200mWJunction temperatureTj150℃Storage temperatureTstg-55 ～ 150℃ Characteristic (Ta = 25ºC)P/NSymbolZener Voltage:VZ(V)Dynamic Impedance:ZZ(Ω)Zener Impedance:ZZK(Ω)Reverse Current:IR(μA)MIN.MAX.Iz(mA)MAX.Iz(mA)MAX.Iz(mA)MAX.VR(V)UDZV 2.0B2.022.25100510000.51200.5UDZV 2.2B2.222.415100510000.51200.7UDZV 2.4B2.432.635100510000.51201UDZV 2.7B2.692.915110510000.51001UDZV 3.0B3.013.225120510000.5501UDZV 3.3B3.323.535120510000.5201UDZV 3.6B3.63.8455100510001101UDZV 3.9B3.894.16510051000151UDZV 4.3B4.174.43510051000151UDZV 4.7B4.554.75510058000.521UDZV 5.1B4.985.258055000.521.5UDZV 5.6B5.495.7356052000.512.5UDZV 6.2B6.066.3356051000.513UDZV 6.8B6.656.935405600.50.53.5UDZV 7.5B7.287.65305600.50.54UDZV 8.2B8.028.365305600.50.55UDZV 9.1B8.859.235305600.50.56UDZV 10B9.7710.215305600.50.17UDZV 11B10.7611.225305600.50.18UDZV 12B11.7412.245305800.50.19UDZV 13B12.9113.495375800.50.110UDZV 15B14.3414.985425800.50.111UDZV 16B15.8516.515505800.50.112UDZV 18B17.5618.355655800.50.113UDZV 20B19.5220.3958551000.50.115UDZV 22B21.5422.47510051000.50.117UDZV 24B23.7224.78512051200.50.119UDZV 27B26.1927.53515051500.50.121UDZV 30B29.1930.69520052000.50.123UDZV 33B32.1533.79525052500.50.125UDZV 36B35.0736.87530053000.50.127UDZV 39B38.0239.9823002--0.130UDZV 43404525502--0.133UDZV 47444926002--0.136 Zener voltage(VZ) is measured by applying current with 40ms pulse. Dynamic resistance(ZZ) is measured by applying small current (AC) and specified current (IZ) simultaneously. MarkingP/NMarkingP/NMarkingUDZV 2.0B2UDZV 10B5UDZV 2.2B12UDZV 11B15UDZV 2.4B22UDZV 12B25UDZV 2.7B32UDZV 13B35UDZV 3.0B42UDZV 15B45UDZV 3.3B52UDZV 16B55UDZV 3.6B62UDZV 18B65UDZV 3.9B72UDZV 20B75UDZV 4.3B82UDZV 22B85UDZV 4.7B92UDZV 24B95UDZV 5.1BA2UDZV 27BA5UDZV 5.6BC2UDZV 30BC5UDZV 6.2BE2UDZV 33BE5UDZV 6.8BF2UDZV 36BF5UDZV 7.5BH2UDZV 39BH5UDZV 8.2BJ2UDZV 43L8UDZV 9.1BL2UDZV 47M8 Characteristic Curves     Dimension (UMD2 SOD-323F SC-90A) UDZVTE-1736B DatasheetYou can download the datasheet from the link given below:UDZVTE-1736B Datasheet UDZVTE-1736B ManufacturerROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. UDZVTE-1736B FAQ1.What is meant by Zener diode?A Zener diode is a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. 2.What is the main function of Zener diode?Zener diodes are used to regulate the voltage on small circuits. When connected in parallel with a variable voltage source that is reverse biased, a Zener diode conducts when the voltage reaches its reverse breakdown voltage. 3.What is the difference between diode and Zener diode?A diode is a semiconductor device which conducts in one direction only. A Zener diode is a semiconductor device which conducts in forward biased as well as reversed biased. On the contrary, Zener diode is designed in a way that it can conduct in a reversed biased mode without getting damaged. 4.What are the advantages of Zener diode?Advantages of Zener DiodesLess expensive than other diodes.Ability to shift voltage.Easily compatible and obtainable across systems.High-performance standard.Protection from over-voltage.Ability to regulate and stabilize circuit voltage.Greater control overflowing current.Usable in smaller circuits. 5.What is Zener diode and types?The Zener diode is a special type of diode that is designed to work in reverse bias and in the so-called Zener region of the diode characteristic curve. This region is after the reverse-biased voltage has exceeded the breakdown voltage (breakdown point). 6.What is Zener diode made of?The true Zener diodes, which have the same properties as avalanche diodes and are used in the same applications, rely on the Zener effect. The diode is made from heavily doped silicon, so that the depletion layer is very thin. 7.How is Zener diode formed?These diodes are made by heavily doped N and P type semiconductors, the quantity of doping of semiconductors is kept different so that their break down voltages are different. In that way, zener diodes different voltage levels have different voltage capacity. 8.How does Zener diode regulate voltage?When zener diode is designed for a specific breakdown voltage, it maintains that voltage by conducting more current when the applied voltage is increased. A ballast resistor in series with it will also absorb the current change thus regulate the voltage across the diode. 9.Why Zener diode is used in reverse bias?Zener diode is a heavily doped diode. It acts as a normal diode in forwarding bias. When the Zener diode is reverse biased the junction potential increases. Therefore the Zener diode turns into a perfect conductor and will drain the current through it. 10.Is Zener diode a rectifier?A zener diode will function as a rectifier but will be limited by its zener voltage which is in effect the reverse breakdown voltage. Suggest using a regular rectifier diode. You will also have a hard time finding a zener with high current ratings that are sometimes required for rectifiers. 11.How do you wire a Zener diode?To connect a zener diode is a circuit and provide a voltage regulation, the zener diode should be connected in reverse biased, in parallel on the power source which gives the zener diode it s voltage, along the source connected to a resistor. The 9v power supply drops across the resistor and the zener diode. 12.Is Zener diode energy efficient?Heating up a zener diode is not an efficient use of this limited energy! Ideally, this efficiency value is er =1, while the worst possible efficiency is er =0. 13.What are the important parameters that should know about the Zener diode?Parameters of Zener DiodeMaximum Zener Current.Minimum Zener Current.Nominal Voltage.Power Dissipation. 14.Why Zener diode is also called breakdown diode?When reverse biased voltage applied to the zener diode reaches zener voltage, it starts allowing large amount of electric current. At this point, a small increase in reverse voltage will rapidly increases the electric current. Because of this sudden rise in electric current, breakdown occurs called zener breakdown. 15.How do you identify a Zener diode?The testing of Zener diodes is the same as the regular diodes. The multimeter is placed in the diode setting and connected to the diode. The forward biased voltage of the diode is found by connecting the positive of the multimeter to the diode's anode. This is the side on the Zener diode that is not marked. 16.Why zener diode do not damage after breakdown?Zener effect incubates when on applying the bias voltage across the diode the valence band of p-region nearly aligns (precisely depends on temperature) with the conduction band of n-region. Here diode does not have any physical breakdown, and hence does not get damaged. 17.What is the resistance of a Zener diode?For a small (1W) zener diode rated at 5V, and at 10mA reverse current, the dynamic resistance is between 10 and 15 ohms. Once again, higher at lower currents. But for the zener, this should not be significant. If it is applied correctly, it will have a constant current through it so the zener voltage will be stable. 18.Can we use zener diode for rectification purpose?Zener diodes are never worked for rectification purposes. Complete step-by-step solution: We do not favour using a Zener Diode in a rectifier circuit because a large maximum peak inverse voltage is needed for a rectifier circuit. Unlike the standard p-n junction diode, a Zener diode has a below peak inverse voltage. 19.How does zener diode reduce DC voltage?A Zener diode's design has the special property of reducing a reverse voltage to a specified value. This makes Zener diodes good, low-cost voltage regulators. To use one in a circuit, you calculate a resistor value, then connect the resistor and Zener across the voltage you want to regulate. 20.How accurate is a Zener diode?The point at which the zener voltage triggers the current to flow through the diode can be very accurately controlled (to less than 1% tolerance) in the doping stage of the diodes semiconductor construction giving the diode a specific zener breakdown voltage, ( Vz ) for example, 4.3V or 7.5V. 21.What happens when a zener diode fails?Interestingly enough, when Zener diodes fail due to excessive power dissipation, they usually fail shorted rather than open. A diode failed in this manner is readily detected: it drops almost zero voltage when biased either way, like a piece of wire.