The Kynix Components

 CatalogDescriptionCAD ModelsBlock DiagramFeatures and BenefitsApplicationsDatasheetProduct AttributesManufacturerUsing WarningFAQDescriptionThe LPC84x are an Arm Cortex-M0+ based, low-cost 32-bit MCU family operating at CPU frequencies of up to 30 MHz. The LPC84x support up to 64 KB of flash memory and 16 KB of SRAM. The peripheral complement of the LPC84x includes a CRC engine, four I2C-bus interfaces, up to five USARTs, up to two SPI interfaces, Capacitive Touch Interface, one multi-rate timer, self-wake-up timer, SCTimer/PWM, one general purpose 32-bit counter/timer, a DMA, one 12-bit ADC, two 10-bit DACs, one analog comparator, function-configurable I/O ports through a switch matrix, an input pattern match engine, and up to 54 general-purpose I/O pins. CAD Models Figure: LPC845-BRK Part Symbol  Figure: LPC845-BRK Footprint Block Diagram Figure: LPC845-BRK Block Diagram Features and BenefitsSystem:Arm Cortex-M0+ processor (revision r0p1), running at frequencies of up to 30 MHz with single-cycle multiplier and fast single-cycle I/O port.Arm Cortex-M0+ built-in Nested Vectored Interrupt Controller (NVIC).System tick timer.AHB multilayer matrix.Serial Wire Debug (SWD) with four break points and two watch points. JTAG boundary scan (BSDL) supported.Micro Trace Buffer (MTB). Memory:Up to 64 KB on-chip flash programming memory with 64 Byte page write and erase.Fast Initialization Memory (FAIM) allowing the user to configure chip behavior on power-up.Code Read Protection (CRP)Up to 16 KB SRAM consisting of two 8 KB contiguous SRAM banks. One 8 KB of SRAM can be used for MTB.Bit-band addressing supported to permit atomic operations to modify a single bit. ROM API support:Boot loader.Supports Flash In-Application Programming (IAP)Supports In-System Programming (ISP) through USART, SPI, and I2C.FAIM API.FRO API.On-chip ROM APIs for integer divide. ApplicationsSensor gatewaysSimple motor controlIndustrialPortables and wearablesGaming controllersLighting8/16-bit applicationsMotor controlConsumerFire and security applicationsClimate control DatasheetLPC845-BRK-Datasheet Product AttributesTechnicalCore ArchitectureARMNumber of I/Os38Schedule B8473300002 ComplianceRoHSCompliant ManufacturerNXP Semiconductors N.V. is a Dutch semiconductor manufacturer with headquarters in Eindhoven, Netherlands that focuses in the automotive industry. The company employs approximately 31,000 people in more than 35 countries, including 11,200 engineers in 33 countries.NXP reported revenue of $9.4 billion in 2018. Originally spun off from Philips in 2006, a merger agreement was announced with Freescale Semiconductor in March 2015, to form a US$40 (equivalent to $43.67 in 2020) billion company.The acquisition closed on 7 December 2015. On 27 October 2016, it was announced that Qualcomm would try to buy NXP,[8] but because the Chinese merger authority did not approve the acquisition before the deadline set by Qualcomm, it was effectively cancelled on 26 July 2018. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQWhat is LPC845-BRK?NXP Semiconductors LPC845-BRK Breakout Board provides a powerful and flexible development system for NXP's low end Cortex-M0+-based LPC84x Family of MCUs, delivered in an ultra-low-cost evaluation board. What is the LPC84x based on?Arm Cortex-M0+ How many I2C-bus interfaces does the LPC84x have?Four

CatalogDescriptionInternal Schematic DiagramAbsolute Maximum RatingsThermal DataElectrical CharacteristicsMechanical Data2N2222 Datasheet2N2222 FAQ DescriptionThe 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002-100, 2N2221/2N2222 approved to CECC 50002-101 available on request. Internal Schematic Diagram Absolute Maximum RatingsSymbolParameterValueUnitVCBOCollector-base Voltage (IE = 0)60VVCEOCollector-emitter Voltage (IB = 0)30VVEBO Emitter-base Voltage (IC = 0)5VICCollector Current0.8APto t  Total Power Dissipation at T amb ≤ 25 °Cfor 2N2218 and 2 N2219 0.8 Wfor 2N2221 and 2 N2222at Tcas e ≤ 25 °Cfor 2N2218 and 2 N22190.5 3W Wfor 2N2221 and 2 N22221.8WT st gStorage Temperature– 65 to 200°CT jJunction Temperature175°C Thermal DataRth j- caseThermal Resistance Junction-case    Max83.3℃/W Rth j-ambThermal Resistance Junction-ambient Max300℃/W Electrical Characteristics (Tamb = 25 °C unless otherwise specified)SymbolParameterTest ConditionsMin.Typ.Max.UnitICBOCollector Cutoff Current (IE = 0)VCB = 50 V  10nAVCB = 50 V  Tamb = 150℃  10μAIEBOEmitter Cutoff Current (IC = 0) VEB = 3 V  10nAV(BR)CBOColllector-base Breakdown Voltage (IE = 0)IC = 10 μA60  VV(BR)CEO*Collector-emitter Breakdown Voltage (IB = 0)IC = 10 mA30  VV(BR)EBO Emittter-base Breakdown Voltage (IC = 0)IE = 10 μA5  VVCE(sat)*Collector-emitter Saturation VoltageIC = 150 mA  IB = 15 mA  0.4VIC = 500 mA  IB = 50 mA  1.6VVBE(sat)*Base-emitter Saturation VoltageIC = 150 mA  IB = 15 mA  1.3VIC = 500 mA  IB = 50 mA  2.6VhFE*DC Current GainIC = 0.1 mA   VCE = 10 V35   IC = 1 mA      VCE = 10 V50   IC = 10 mA    VCE = 10 V75   IC = 150 mA  VCE = 10 V100 300 IC = 500 mA  VCE = 10 V30   IC = 150 mA  VCE = 1V50   fTTransition FrequencyIC = 20 mA   f = 100 MHz   VCE  = 20 V250  MHz CCBOCollector-base CapacitanceIE = 0   f = 100 kHz   VCB  = 10 V  8pFRe(hie) Real Part of Input ImpedanceIC = 20mA   f = 300 MHz   VCE  = 20 V  60Ω* Pulsed : pulse duration = 300 µs, duty cycle = 1 %. Mechanical DataTO-18 Mechanical DataDIM.  mm  inch MIN.TYP.MAX.MIN.TYP.MAX.A 12.7  0.500 B  0.49  0.019D  5.3  0.208E  4.9  0.193F  5.8  0.228G2.54  0.100  H  1.2  0.047I  1.16  0.045L45o  45o   TO39 Mechanical DataDIM.  mm  inch MIN.TYP.MAX.MIN.TYP.MAX.A12.7  0.500  B  0.49  0.019D  6.6  0.260E  8.5  0.334F  9.4  0.370G5.08  0.200  H  1.2  0.047I  0.9  0.035L  45o (typ.)    2N2222 DatasheetYou can download the datasheet of 2N2222 from the link given below:2N2222 Datasheet 2N2222 FAQWhat are 2N2222 High-Speed Switches?2N2222 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal cases. It is designed for high-speed switching applications at collector currents up to 500 MA and features useful current gain over a wide range of collector current, low leakage currents, and low saturation voltages. What is 2N2222 NPN transistor?2N2222 is an NPN transistor, which means it has a single P doped layer embedded between two N doped layers. It's a Bipolar junction transistor abbreviated as BJT. It has three terminals named as: Emitter. What is 2N2222 used for?The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture. How fast can a 2N2222 switch?The 2N2222 has a combined rise-time, fall-time, and storage-time of 310ns, thus the maximum switching frequency is about 3MHz so it's not appropriate for this application. In which device 2N2222 transistor is used?It is typically used in automation & embedded projects. These transistors are used in Motor drive circuits like VFD or variable frequency drives. It is used as an amplifier to amplify voltage, current & power. What is the gain of a 2N2222?2N2222 has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. Is PN2222 same as 2N2222?PN2222 vs 2N2222For most purposes, they are interchangeable. But there are subtle differences between them. Firstly, package, PN2222 is in a molded-epoxy TO-92; 2N2222 is in a TO-18 metal can. Secondly, gain and leakage characteristics, PN2222A is properly a repackaging of 2N2222A, a better version of 2N2222. What is the difference between 2N2222 and 2N2222A?The 2n2222A is a slight bit better in terms of Vceo, Vcbo, Vebo. But if you are not planning on stressing the part (higher voltages, etc) both will work well, especially for simple switching and logic circuits. The 2n2222 part is the older style part which might be the reason they are being offered at a low price. What is hFE BJT?hFE of a transistor is the current gain or amplification factor of a transistor. hFE (which is also referred to as β) is the factor by which the base current is amplified to produce the amplified current of the transistor. The datasheets will normally specify whether the hFE value is for DC or AC current gain. What is HFE and HFE?hFE is an abbreviation, and it stands for "Hybrid parameter forward current gain, common emitter", and is a measure of the DC gain of a junction transistor. So on a multimeter, it indicates a mode where the meter can measure (probably crudely), the HFE of a transistor. 

CatalogHT16K33 DescriptionHT16K33 FeaturesHT16K33 ApplicationsHT16K33 Pin ConfigurationHT16K33 Block DiagramHT16K33 DatasheetHT16K33 ManufacturerUsing WarningHT16K33 FAQ HT16K33 DescriptionThe HT16K33 is a memory mapping and multi-function LED controller driver. The max. Display segment numbers in the device is 128 patterns (16 segments and 8 commons) with a 13*3 (MAX.) matrix key scan circuit. The software configuration features of the HT16K33 makes it suitable for multiple LED applications including LED modules and display subsystems. The HT16K33 is compatible with most microcontrollers and communicates via a two-line bidirectional I2C-bus. HT16K33 FeaturesOperating voltage: 4.5V~5.5VIntegrated RC oscillatorI2 C-bus interface16*8 bits RAM for display data storageMax. 16 x 8 patterns, 16 segments and 8 commonsR/W address auto incrementMax. 13 x 3 matrix key scanning16-step dimming circuitSelection of 20/24/28-pin SOP package types HT16K33 ApplicationsIndustrial control indicatorsDigital clocks, thermometers, counters, multimetersCombo setsVCR setsInstrumentation readoutsOther consumer applicationsLED Displays HT16K33 Pin Configuration Figure: Pin Configuration HT16K33 Block Diagram Figure: Block Diagram HT16K33 DatasheetYou can download the datasheet from the link given below.HT16K33-Datasheet HT16K33 ManufacturerHoltek Semiconductor is a leading professional IC design house in Taiwan having its major business activities focused in the area of microcontroller and peripheral component design and marketing. From its origins in 1998, the company has continuously focused its energies in the advancement of new product development and skills innovation. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. HT16K33 FAQWhat does an LED driver do?An LED driver is an electrical device that regulates power to an LED or a string of LEDs. ... Forward Voltage is the amount of volts the light emitting diode requires to conduct electricity and light up. As temperature increases, the forward voltage of the LED decreases, causing the LED to draw more. When should I use LED driver?In the instance of a change in voltage (power), an LED driver would protect an LED bulb from any electrical current fluctuations. These fluctuations can cause a light bulb to vary its light output (brightness), or cause the LED bulb to overheat. An LED Driver is vital to the safety of the bulb. Can LED drivers be replaced?LED Driver Replacement is a difficult process. When an LED fixture fails you need to either purchase a new fixture or replace the driver. In most scenarios it's the LED driver that needs replacement (LED components have a longer shelf life). 

CatalogFeaturesGeneral DescriptionApplicationsFunctional Block DiagramAbsolute Maximum Ratings†DC CharacteristicsTemperature CharacteristicsPin DescriptionsApplications InformationTC4420 DatasheetTC4420 FAQ FeaturesLatch-Up Protected: Will Withstand >1.5A Reverse Output CurrentLogic Input Will Withstand Negative Swing Up To 5VESD Protected: 4 kVMatched Rise and Fall Times: - 25 ns (2500 pF load)High Peak Output Current: 6AWideInput Supply Voltage Operating Range: - 4.5V to 18VHigh Capacitive Load Drive Capability: 10,000 pFShort Delay Time: 55 ns (typ.)CMOS/TTL Compatible InputLow Supply Current With Logic ‘1’ Input: - 450 µA (typ.)Low Output Impedance: 5WOutput Voltage Swing to Within 25 mV of Ground or VDDSpace-Saving 8-Pin SOIC and 8-Pin 6x5 DFN Packages General DescriptionThe TC4420/TC4429 are 6A (peak), single-output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both devices have TTL/CMOS compatible inputs that can be driven as high as VDD + 0.3V or as low as -5V without upset or damage to the device. This eliminates the need for external level-shifting circuitry and its associated cost and size. The output swing is rail-to-rail, ensuring better drive voltage margin, especially during power-up/power-down sequencing. Propagational delay time is only 55 ns (typ.) and the output rise and fall times are only 25 ns (typ.) into 2500 pF across the usable power supply range. Unlike other drivers, the TC4420/TC4429 are virtually latch-up proof. They replace three or more discrete components, saving PCB area, parts and improving overall system reliability. ApplicationsSwitch-Mode Power SuppliesMotor ControlsPulse Transformer DriverClass D Switching Amplifiers Functional Block Diagram Absolute Maximum Ratings†Supply Voltage: +20VInput Voltage: V to VDD  + 0.3VInput Current (VIN > VDD): 50 mAPower Dissipation (TA ≤ 70°C)5-Pin TO-220: 1.6WCERDIP: 800 mWDFN: Note 2PDIP: 730 mWSOIC: 470 mWPackage Power Dissipation (TA ≤ 25°C)5-Pin TO-220 (With Heatsink): 12.5WThermal Impedances (To Case)5-Pin TO-220 RΘJ-C: 10°C/W† Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC CharacteristicsElectrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.ParametersSymMinTypMaxUnitsConditionsInputLogic ‘1’, High Input VoltageVIH2.41.8—V Logic ‘0’, Low Input VoltageVIL—1.30.8V Input Voltage RangeVIN–5—VDD+0.3V Input CurrentIIN–10—+10µA0V ≤ VIN ≤ VDDOutputHigh Output VoltageVOHVDD – 0.025——VDC TESTLow Output VoltageVOL——0.025VDC TESTOutput Resistance, HighROH—2.12.8ΩIOUT = 10 mA, VDD = 18VOutput Resistance, LowROL—1.52.5ΩIOUT = 10 mA, VDD = 18VPeak Output CurrentIPK—6.0—AVDD = 18VLatch-Up Protection Withstand Reverse CurrentIREV—> 1.5—ADuty cycle ≤ 2%, t ≤ 300 µsecSwitching Time (Note 1)Rise TimetR—2535nsFigure 4-1, CL = 2,500 pFFall TimetF—2535nsFigure 4-1, CL = 2,500 pFDelay TimetD1—5575nsFigure 4-1Delay TimetD2—5575nsFigure 4-1Power SupplyPower Supply CurrentIS——0.45551.5150mA µAVIN = 3V VIN = 0VOperating Input VoltageVDD4.5—18V Note  1: Switching times ensured by design.2: Package power dissipation is dependent on the copper pad area on the PCB. Temperature CharacteristicsElectrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.ParametersSymMinTypMaxUnitsConditionsTemperature RangesSpecified Temperature Range (C)TA0—+70°C Specified Temperature Range (I)TA–25—+85°C Specified Temperature Range (E)TA–40—+85°C Specified Temperature Range (V)TA–40—+125°C Maximum Junction TemperatureTJ——+150°C Storage Temperature RangeTA–65—+150°C Package Thermal ResistancesThermal Resistance, 5L-TO-220ΘJA—71—°C/W Thermal Resistance, 8L-CERDIPΘJA—150—°C/W Thermal Resistance, 8L-6x5 DFNΘJA—33.2—°C/WTypical four-layer board with vias to ground plane.Thermal Resistance, 8L-PDIPΘJA—125—°C/W Thermal Resistance, 8L-SOICΘJA—155—°C/W  Pin DescriptionsPin Function TablePin No. 8-Pin CERDIP/ PDIP/SOICPin No. 8-Pin DFNPin No. 5-Pin TO-220SymbolDescription11—VDDSupply input, 4.5V to 18V221INPUTControl input, TTL/CMOS compatible input33—NCNo Connection442GNDGround554GNDGround665OUTPUTCMOS push-pull output77—OUTPUTCMOS push-pull output883VDDSupply input, 4.5V to 18V—PAD—NCExposed Metal Pad——TABVDDMetal Tab is at the VDD Potential Supply Input (VDD)The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pins. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested. Control InputThe MOSFET driver input is a high-impedance, TTL/CMOS compatible input. The input circuitry of the TC4420/TC4429 MOSFET driver also has a “speed- up” capacitor. This helps to decrease the propagation delay times of the driver. Because of this, input signals with slow rising or falling edges should not be used, as this can result in double-pulsing of the MOSFET driver output. CMOS Push-Pull OutputThe MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 6.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. GroundThe ground pins are the return path for the bias current and the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. Exposed Metal PadThe exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board (PCB) to aid in heat removal from the package. Applications Information Note: Pinout shown is for the PDIP, SOIC, DFN and CERDIP packages. TC4420 DatasheetYou can download the datasheet of TC4420 from the link given below:TC4420 Datasheet TC4420 FAQWhat does a MOSFET driver do?A MOSFET driver is a type of power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an Insulated-Gate Bipolar Transistor (IGBT) or power MOSFET. Is a MOSFET driver necessary?A MOSFET usually needs a gate driver to do the on/off operation at the desired frequency. For high frequencies, MOSFETs require a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals necessary to control the MOSFET. How do I choose a MOSFET driver?Be sure to choose power MOSFETs that are rated for at least the power supply voltage and the maximum current the motor requires. Remember that it is necessary to leave some margin. Choose a MOSFET whose drain-to-source voltage rating (VDS) is at least 20% higher than the supply voltage. Which is better IGBT or MOSFET?When compared to the IGBT, a power MOSFET has the advantages of higher commutation speed and greater efficiency during operation at low voltages. What's more, it can sustain a high blocking voltage and maintain a high current. What is drive current in MOSFET?The MOSFET transistors are simpler to drive because their control electrode is isolated from the current conducting silicon, therefore a continuous ON current is not required. Once the MOSFET transistors are turned-on, their drive current is practically zero. 

CatalogFeaturesMaximum RatingsThermal CharacteristicsMarking DiagramElectrical CharacteristicshFE ClassificationTypical Performance CharacteristicsOrdering InformationKSA992 DatasheetKSA992 FAQ FeaturesAudio Frequency Low−Noise AmplifierComplement to KSC1845These are Pb−Free Devices KSA992 PNP Epitaxial Silicon TransistorMaximum Ratings (Values are at TA = 25°C unless otherwise noted.)SymbolParameterValueUnitVCBOCollector−Base Voltage−120VVCEOCollector−Emitter Voltage−120VVEBOEmitter−Base Voltage−5VICCollector Current−50mAIBBase Current−10mATJJunction Temperature150°CTSTGStorage Temperature−55 to 150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Characteristics (Values are at TA= 25°C unless otherwise noted.) (Note 1)SymbolParameterValueUnitPD Power Dissipation500mWDerate Above 25°C4mW/°CRθJAThermal Resistance, Junction−to−Ambient250° C/W 1.PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)with minimum land pattern size. Marking DiagramKSA992 Marking Diagram A = Assembly CodeA992 = Device CodeX = F / FA / FBYWW = Date Code Electrical Characteristics (Values are at TA = 25°C unless otherwise noted.)SymbolParameterConditionsMinTypMaxUnitICBOCollector Cut−Off CurrentVCB = −120 V, IE = 0−−−50nAICEOCollector Cut−Off CurrentVCE = −100 V, IB = 0−−−1µAIEBOEmitter Cut−Off CurrentVEB = −5 V, IC = 0−−−50nAhFE1DC Current Gain VCE = −6 V, IC = −0.1 mA150500− hFE2VCE = −6 V, IC = −1 mA200500800 VBE(on)Base−Emitter On VoltageVCE = −6 V, IC = −1 mA−0.55−0.61−0.65VVCE(sat)Collector−Emitter Saturation VoltageIC = −10 mA, IB = −1 mA−−0.09−0.30VfTCurrent Gain Bandwidth ProductVCE = −6 V, IC = −1 mA50100−MHzCobOutput CapacitanceVCB = −30 V, IE = 0, f = 1 MHz−23pFNFNoise FigureVCE = −5 V, IC = −1.0 mA, RS = 100 kΩ, f = 1 kHz−7−dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE ClassificationClassificationPFFAFBEhFE2200~400300~600300~470430~600400~800 Typical Performance CharacteristicsKSA992 Static Characteristic  KSA992 DC Current Gain  KSA992 Base−Emitter Saturation Voltage and Collector−Emitter Saturation Voltage  KSA992 Collector Output Capacitance  KSA992 Current Gain Bandwidth Product  KSA992 Power Derating Ordering InformationPart NumberTop MarkPackageShipping†KSA992FBUA992TO−92 3L(Pb−Free)10000 Units / BulkKSA992FTAA992TO−92 3L(Pb−Free)2000 / Tape & AmmoKSA992FATAA992TO−92 3L(Pb−Free)2000 / Tape & AmmoKSA992FBTAA992TO−92 3L(Pb−Free)2000 / Tape & Ammo †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. KSA992 DatasheetYou can download the datasheet of KSA992 from the link given below:KSA992 Datasheet KSA992 FAQWhat is PNP Transistor and its types?The PNP transistor is a type of transistor in which one n-type material is doped with two p-type materials. It is a device that is controlled by the current. Both the emitter and collector currents were controlled by the small amount of base current. Two crystal diodes are connected back-to-back in the PNP transistor. What is the working principle of PNP transistor?PNP Transistor works when Base Emitter junction is forward biased and the Base Collector junction is reverse biased. A junction is said to be forward biased when a P-type semiconductor is connected with the positive terminal and N-type semiconductor is connected to the negative terminal. What is epitaxial growth of silicon?Silicon Epitaxial Growth Process. In wafer fabrication, silicon epitaxial deposition, or epitaxy, refers to the process of growing a thin layer of single-crystal silicon over a single-crystal silicon substrate. What is epitaxial layer in CMOS?Epitaxy growth consist of the formation of a layer of a single-crystal silicon on the surface of the silicon on the surface of the silicon material so that the crystal structure of the silicon is continuous across the interfaces. What is epitaxial structure?Epitaxial interfaces in solids are a special class of crystalline interfaces where the molecular arrangement of one crystal on top of another is defined by the crystallographic and chemical features of the underlying crystal. 

CatalogFeaturesApplicationDescriptionInternal Schematic DiagramDevice SummaryAbsolute Maximum RatingsThermal DataElectrical CharacteristicsElectrical characteristics (curves)Package Mechanical DataBD139 DatasheetBD139 FAQ Features■Products are pre-selected in DC current gain Application■General purpose DescriptionThese epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Internal Schematic Diagram Device SummaryOrder codesMarkingPackagePackagingBD135BD135SOT-32TubeBD135-16BD135-16BD136BD136BD136-16BD136-16BD139BD139BD139-10BD139-10BD139-16BD139-16BD140BD140BD140-10BD140-10BD140-16BD140-16 Absolute Maximum RatingsSymbolParameterValueUnitNPNPNPBD135BD139BD136BD140VCBOCollector-base voltage (IE = 0)4580-45-80VVCEOCollector-emitter voltage (IB = 0)4580-45-80VVEBOEmitter-base voltage (IC = 0)5-5VICCollector current1.5-1.5AICMCollector peak current3-3AIBBase current0.5-0.5APTOTTotal dissipation at Tc ≤ 25 °C12.5WPTOTTotal dissipation at Tamb ≤ 25 °C1.25WTstgStorage temperature-65 to 150°CTjMax. operating junction temperature150°C Thermal DataSymbolParameterMax valueUnitRthj-caseThermal resistance junction-case10°C/WRthj-ambThermal resistance junction-ambient100°C/W Electrical Characteristics(Tcase= 25 °C unless otherwise specified)SymbolParameterPolarityTest conditionsValueUnitMin.Typ.Max.ICBOCollector cut-off current (IE=0)NPNVCB = 30 V  0.1µAVCB = 30 V, TC = 125 °C10PNPVCB = -30 V  -0.1µAVCB = -30 V, TC = 125 °C-10IEBOEmitter cut-off current (IC=0)NPNVEB = 5 V  10µAPNPVEB = -5 V  -10VCEO(sus)(1)Collector-emitter sustaining voltage (IB=0)NPNIC = 30 mA   VBD13545  BD13980  PNPIC = -30 mA   VBD13645  BD14080  VCE(sat) (1)Collector-emitter saturation voltageNPNIC = 0.5 A, IB = 0.05 A  0.5VPNPIC = -0.5 A, IB = -0.05 A  -0.5VVBE (1)Base-emitter voltageNPNIC = 0.5 A, VCE = 2 V  1VPNPIC = -0.5 A, VCE = -2 V  -1VhFE (1)DC current gainNPNIC = 5 mA, VCE = 2 V25 250 IC = 150 mA, VCE = 2 V40  IC = 0.5 A, VCE = 2 V25  PNPIC = -5 mA, VCE = -2 V25 250 IC = -150 mA, VCE = -2 V40  IC = -0.5 A, VCE = -2 V25  hFE (1)hFE groupsNPNIC = 150 mA, VCE = 2 V    BD139-1063 160 BD135-16/BD139-16100 250 PNPIC = -150 mA, VCE = -2 V    BD140-1063 160 BD136-16/BD140-16100 250 1.Pulsed: pulse duration = 300 µs, duty cycle 1.5% Electrical characteristics (curves)Figure. Safe Operating Area  Figure. Derating Package Mechanical DataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. SOT-32 (TO-126) MECHANICAL DATADIM.mm.MIN.TYPMAX.A2.4 2.9B0.64 0.88B10.39 0.63D10.5 11.05E7.4 7.8e2.042.292.54e14.074.585.08L15.3 16P2.9 3.2Q 3.8 Q11 1.52H2 2.15 I 1.27  BD139 DatasheetYou can download the datasheet of BD139 from the link given below:BD139 Datasheet BD139 FAQWhat is BD139 transistor?The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. Products are pre-selected in DC current gain. Collector to emitter voltage (Vce) is 80V. Collector current (Ic) is 1.5A. Is the BD139 an NPN or PNP transistor?These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. What is BD139 used for?BD139 is a Bipolar NPN transistor, mounted in the SOT-32 plastic package and is designed for audio amplifier and driver utilizing complementary circuits. due to its high collector current and low cost it is an ideal transistor to be used in educational electronic projects and also in commercial electronics. Can I use BD139 instead of BD140?When large currents or voltages need to be controlled, Darlington Transistors can be used. Though the best choice for power transistors is BD139 and BD140 but if they are not available then you may also go for BD135 and BD136 which are NPN and PNP transistors respectively but preference must be given to BD139/140 pair. What is complementary power transistors?Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.