The Kynix Components

CatalogTYPICAL APPLICATIONSFEATURESGENERAL INFORMATIONMOUNTING DIMENSIONSSENSOR SPECIFICATIONSTARGET GUIDELINESReference Target DimensionsSensor OutputREFERENCE TARGET/CONDITIONSDatasheet PDF DownloadFAQ TYPICAL APPLICATIONSAutomotive and Heavy Duty Vehicles:Camshaft and crankshaft speed/positionTransmission speedTachometersAnti-skid/traction control Industrial:Sprocket speedChain link conveyor speed and distanceStop motion detectorHigh speed low cost proximityTachometers, Counters FEATURESSenses ferrous metal targetsDigital current sinking output (opencollector)Better signal-to-noise ratio thanvariable reluctance sensors, excellentlow speed performance, output amplitude not dependent on RPMSensor electronically self-adjusts toslight variations in runout andvariations in temperature, simplifying installation and maintenanceFast operating speed - over 100 kHzEMI resistantReverse polarity protection andtransient protection (integrated intoHall l.C.)Wide continuous operatingtemperature range (-40°to 150℃),short term to 160°C GENERAL INFORMATION1GT1 Series Gear Tooth Sensors use a magnetically biased Hall effect integrated circuit to accurately sense movement of ferrous metal targets. This specially designed I.C., with discrete capacitor and bias magnet, is sealed in a probe type package for physical protection and costeffective installation. Units will function from a 4.5 to 24 VDC power supply. Output is digital, current sinking (open collector). Reverse polarity protection is standard. If power is inadvertently wired backwards, the sensor will not be damaged. Builtin|protection against pulsed transients to + 60V, - 40V is also included. Optimum sensor performance is dependent on the following variables which must be considered in combination:Target material, geometry, and speedSensor/target gapAmbient temperatureMagnetic material in close proximity MOUNTING DIMENSIONS (For reference only) SENSOR SPECIFICATIONSAll values were measured using 1 K pull-up resistor.Electrical CharacteristicsSupply Voltage4.5 to 24 VDCSupply Current10 mA typ., 20 mA max.Output Voltage (output low)0.4 V max.Output Current (output high)10 µA max. leakage into sensorSwitching Time Rise (10 to 90%)15 µsec. max.Fall (90 to 10%)1.0 µsec. max.Absolute Maximum RatingsSupply Voltage (Vs)±30 VDC continuousVoltage Externally Applied To Output (output high)–0.5 to +30 VOutput Current40 mA sinkingTemperature RangeStorage–40 to 150° (–40 to 302°F)Operating–40 to 150° C (–40 to 302°F)Switching CharacteristicsOperate Point3.7±1.25° (3,28±1,13 mm)Release Point4.7±2.50° (4,16±2,21 mm)Differential Travel8.4±3.70° (7,45±3,34 mm) TARGET GUIDELINES The Target Guidelines table provides basic parameters when an application is not restricted to a specific target. Any target wheel that exceeds the following minimum specifications can be sensed over the entire temperature range of –40° to 150°C with any sensing gap upto .080 in. (2,0 mm). This data is based on a 4 in. (102 mm) diameter wheel, rotating 10 to 3600 RPM. Reference Target DimensionsTooth Height:.200 in. (5,06 mm) min.Tooth Width:.100 in. (2,54 mm) minTooth Spacing:.400 in. (10,16 mm) min.Target Thickness:.250 in. (6,35 mm) Sensor Output (with pull-up resistor added to output circuit) REFERENCE TARGET/CONDITIONS Characteristics will vary due to target size, geometry, location, and material. Sensor specifications were derived using a cold-rolled steel reference target. See table, right, for reference target configuration and evaluation conditions.  TargetDiameter: 4 in. (101,6 mm)Tooth Width: .350 in. (8,89 mm)Thickness: .250 in. (6,35 mm) Test ConditionsAir Gap: .040 to .080 in. (1,02 to 2,03 mm)V Supply: 4.5 to 24 VRPM: 10 min., 3600 max. Datasheet PDF DownloadYou can download the datasheet from the link given below.1GT101DC-Datasheet FAQWhat is a Hall effect sensor used for?Using magnetic fields, Hall effect sensors are used to detect variables such as the proximity, speed, or displacement of a mechanical system. Hall effect sensors are non-contact, which means that they do not have to come in contact with a physical element. Are Hall effects sensors 2 or 3?Two different types of Hall effect ABS sensor are used in cars, with either 2 wires or 3 wires. The 3 wire Hall effect ABS sensor has a simple power supply and a signal wire with the signal voltage (Us) going to the ABS ECU. What are the types of Hall effect sensors?There are two types of Hall effect sensors: Devices with linear (or analogue) outputs, and those that have digital outputs. Analogue sensors use a continuous voltage output that increases within a strong magnetic field and decreases in a weaker field. 

CatalogProduct SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product SummaryBVDSSRDS(on) maxID TA = +25°C50V10Ω @ VGS = -5V-130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.General Purpose Interfacing SwitchPower Management FunctionsAnalog Switch Features and BenefitsLow On-ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching SpeedLow Input/Output Leakage Mechanical Data• Case: SOT23 (Standard)• Case Material: UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020• Terminals: Matte Tin Finish (Lead Free Plating) Solderable per MIL-STD-202, Method 208• Terminal Connections: See Diagram• Weight: 0.009 grams (Approximate) Maximum Ratings (@ TA = +25°C, unless otherwise specified.)CharacteristicSymbolValueUnitDrain-Source VoltageVDSS-50VDrain-Gate Voltage RGS £ 20kWVDGR-50VGate-Source Voltage ContinuousVGSS±20VDrain Current (Note 5) ContinuousID-130mAPulsed Drain CurrentIDM-1.2A Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)CharacteristicSymbolValueUnitTotal Power Dissipation (Note 5)PD300mWThermal Resistance, Junction to AmbientRqJA417° C/WOperating and Storage Temperature RangeTJ, TSTG-55 to +150°C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)CharacteristicSymbolMinTypMaxUnitTest ConditionOFF CHARACTERISTICS (Note 6)Drain-Source Breakdown VoltageBVDSS-50¾¾VVGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS¾¾¾¾¾¾-1-2-100µA µA nAVDS = -50V, VGS = 0V, TJ = +25°C VDS = -50V, VGS = 0V, TJ = +125°C VDS = -25V, VGS = 0V, TJ = +25°CGate-Body LeakageIGSS¾¾±10nAVGS = ±20V, VDS = 0VON CHARACTERISTICS (Note 6)Gate Threshold VoltageVGS(th)-0.8¾-2.0VVDS = VGS, ID = -1mAStatic Drain-Source On-ResistanceRDS(on)¾3.210WVGS = -5V, ID = -0.100AForward TransconductancegFS0.05¾¾SVDS = -25V, ID = -0.1ADYNAMIC CHARACTERISTICS (Note 7)Input CapacitanceCiss¾24.645pF VDS = -25V, VGS = 0V, f = 1.0MHzOutput CapacitanceCoss¾4.725pFReverse Transfer CapacitanceCrss¾2.812pFGate ResistanceRg¾916¾ΩVDS = 0V, VGS = 0V, f = 1MHzTotal Gate Charge (VGS = -4.5V)Qg¾0.28¾nC VDS = -10V, ID = -0.1ATotal Gate Charge (VGS = -10V)Qg¾0.59¾nCGate-Source ChargeQgs¾0.09¾nCGate-Drain ChargeQgd¾0.08¾nCTurn-On Delay TimetD(on)¾10¾nsVDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10VTurn-Off Delay TimetD(off)¾18¾ns    Package Outline Dimensions Suggested Pad Layout Datasheet PDF DownloadYou can download the datasheet from the link given below.BSS84-7-F-Datasheet FAQWhat is P channel enhancement-mode MOSFET?Enhancement-mode MOSFETs are used in integrated circuits to produce CMOS type Logic Gates and power switching circuits in the form of as PMOS (P-channel) and NMOS (N-channel) gates. CMOS actually stands for Complementary MOS meaning that the logic device has both PMOS and NMOS within its design. How does enhancement-mode work in MOSFET?In an enhancement-mode MOSFET, the electrostatic field created by the application of a gate voltage enhances the conductivity of the channel, rather than deplete the channel as in the case of a depletion-mode MOSFET. What is meant by enhancement mode?The switching mosfet that is designed to be in 'OFF' state when the gate voltage applied is zero(i.e. Vs. =0) and will turn on when the gate voltage is pulled to drain voltage(VDD) which is positive voltage for NMOS FETs and Negative for PMOS FETs. View All Products. Engineering Glossary. 

CatalogDescriptionCAD ModelsPin InformationBlock DiagramFeaturesApplicationsDatasheetSpecificationsManufacturerUsing WarningFAQ DescriptionThe MPX10 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturers to design and add their own external temperature compensation and signal conditioning networks. Compensation techniques are simplified because of the predictability of NXP's single element strain gauge design. CAD Models Figure: PCB Symbol  Figure: Footprint  Figure: 3D Model Pin Information Figure: Pin Information Block Diagram Figure: Block Diagram FeaturesLow CostPatented Silicon Shear Stress Strain Gauge DesignRatiometric to Supply VoltageDifferential and Gauge OptionsDurable Epoxy Unibody Element or Thermoplastic (PPS) Surface Mount Package ApplicationsAir Movement ControlEnvironmental Control SystemsLevel IndicatorsLeak DetectionMedical DiagnosticsIndustrial ControlsPneumatic Control SystemsRoboticsDatasheetYou can download the datasheet the link given below.MPX10DP-Datasheet SpecificationsTYPEDESCRIPTIONCategorySensors, Transducers Pressure Sensors, TransducersMfrNXP USA Inc.SeriesMPX10PackageTrayProduct StatusActiveApplicationsBoard MountPressure TypeDifferentialOperating Pressure1.45PSI (10kPa)Output TypeWheatstone BridgeOutput0 mV ~ 35 mV (3V)Accuracy±1%Voltage - Supply3V ~ 6VPort SizeMale - 0.19" (4.93mm) Tube, DualPort StyleBarbedTermination StylePC PinMaximum Pressure10.88PSI (75kPa)Operating Temperature-40℃ ~ 125℃Package / Case4-SIP ModuleBase Product NumberMPX10 ManufacturerNXP Semiconductors N.V. is a Netherlands-domiciled American semiconductor manufacturer with headquarters in Eindhoven, Netherlands that focuses in the automotive industry. The company employs approximately 31,000 people in more than 35 countries, including 11,200 engineers in 33 countries. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQWhat is a pressure sensor used for?A pressure sensor is an electronic device that detects, regulates, or monitors pressure, and converts perceived physical data into an electronic signal. How do you calibrate a pressure sensor?1.Once it is properly set up and has stabilized, pump the necessary pressure.2.Supply an increasing pressure. S imulate at least 5 setpoints covering the entire range.3.Then apply pressure in decreasing order once the maximum pressure is reached.4.Record in your Measurement Data Sheet. What is the difference between pressure sensor and force sensor?Force and pressure sensors are engineered with the same high technology, thin film strain gauge design. Available in similar materials as well, the main difference in the sensors is what the sensor is measuring and how it is doing so. 

CatalogDescriptionPin ConfigurationBlock DiagramFeaturesApplicationsDatasheetSpecificationsManufacturerUsing WarningFAQDescriptionThe MPX2053 series devices are silicon piezoresistive pressure sensors that provide a highly accurate and linear voltage output directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin-film resistor network integrated on-chip. The chip is laser trimmed for precise span and offset calibration and temperature compensation. Pin Configuration Figure: Pin Configuration Block Diagram Figure: Block Diagram FeaturesRatiometric to Supply VoltageDifferential and Gauge OptionsTemperature Compensated over 0 °C to 85 °CEasy-to-Use Chip Carrier Package Options ApplicationsLevel IndicatorsMedical DiagnosticsRoboticsPressure SwitchingPump/Motor ControllersNon-Invasive Blood Pressure Measurement DatasheetYou can download the datasheet the link given below.MPXM2053GS-Datasheet SpecificationsTYPEDESCRIPTIONMfrNXP USA Inc.SeriesMPXM2053PackageTubeProduct StatusActiveApplicationsBoard MountPressure TypeVented GaugeOperating Pressure7.25PSI (50kPa)Output TypeWheatstone BridgeOutput0 mV ~ 40 mV (10V)Accuracy-0.6% ~ 0.4%Voltage - Supply10V ~ 16VPort SizeMale - 0.12" (2.97mm) TubePort StyleBarblessFeaturesTemperature CompensatedTermination StyleGull WingMaximum Pressure29.01PSI (200kPa)Operating Temperature-40℃ ~ 125℃Package / Case5-SMD Module, Top PortSupplier Device Package5-MPAK ManufacturerNXP Semiconductors N.V. is a Netherlands-domiciled American semiconductor manufacturer with headquarters in Eindhoven, Netherlands that focuses in the automotive industry. The company employs approximately 31,000 people in more than 35 countries, including 11,200 engineers in 33 countries. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. FAQWhat are the different types of board level pressure sensors?The board level pressure sensors include gage, absolute, differential, and compound pressure types (ranging from 0-2 to 30 inches of water and 0-1 to 500 psi). Where should a pressure sensor be placed?As a general rule, pressure sensors should always be placed away from any turbulent air. Placement near windows or doors, and supply or exhaust vents should always be avoided. What is the difference between a pressure switch and a pressure sensor?Pressure switches are used in systems to ensure the safety of the machine and its operators while sensors simply relay a pressure readout to a remote location. 

Product OverviewThe NTA4153NT1G is a N-channel Small Signal MOSFET with ESD protected gate. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers. This blog will introduce NTA4153NT1G systematically from its features, pinout to its specifications, applications, also including NTA4153NT1G datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionNTA4153NT1G FeaturesNTA4153NT1G PinoutNTA4153NT1G ApplicationsNTA4153NT1G CAD ModelsNTA4153NT1G PackageNTA4153NT1G SpecificationNTA4153NT1G vs NTK3134NT5HNTA4153NT1G ManufacturerNTA4153NT1G DatasheetUsing WarningsNTA4153NT1G FAQ Related Video Introduction Video: How to Test MOSFET transistor using Multimeter by some easy methods NTA4153NT1G Video Description: In this video, I have explained some methods of checking MOSFET transistor using a multi-meter. The method is shown here for testing MOSFET is very easy. NTA4153NT1G FeaturesLow RDS(on) Improving System EfficiencyLow Threshold Voltage, 1.5 V RatedESD Protected GateNV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP CapablePb−Free Packages are Available NTA4153NT1G PinoutThe following figure is the diagram of NTA4153NT1G pinout. Marking Diagram & Pin Assignment NTA4153NT1G Top View NTA4153NT1G ApplicationsLoad/Power SwitchesPower Supply Converter CircuitsBattery ManagementPortables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. NTA4153NT1G CAD ModelsThe followings are NTA4153NT1G Symbol, Footprint, and 3D Model. NTA4153NT1G Symbol NTA4153NT1G Footprint NTA4153NT1G 3D Model NTA4153NT1G PackageThe following diagram shows the NTA4153NT1G package. NTA4153NT1G Package NTA4153NT1G SpecificationProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:MOSFETTechnology:SiMounting Style:SMD/SMTPackage / Case:SC-75-3Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:20 VId - Continuous Drain Current:915 mARds On - Drain-Source Resistance:230 mOhmsVgs - Gate-Source Voltage:- 10 V, + 10 VVgs th - Gate-Source Threshold Voltage:450 mVQg - Gate Charge:1.82 nCMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 150 CPd - Power Dissipation:300 mWChannel Mode:EnhancementBrand:onsemiConfiguration:SingleFall Time:4.4 nsForward Transconductance - Min:7.6 nsHeight:0.75 mmLength:1.6 mmProduct:MOSFET Small SignalProduct Type:MOSFETRise Time:4.4 nsSeries:NTA4153NFactory Pack Quantity:3000Subcategory:MOSFETsTransistor Type:1 N-ChannelType:MOSFETTypical Turn-Off Delay Time:25 nsTypical Turn-On Delay Time:3.7 nsWidth:0.8 mm NTA4153NT1G vs NTK3134NT5H  NTA4153NT1GNTK3134NT5H Reach Compliance CodecompliantcompliantECCN CodeEAR99EAR99Factory Lead Time1 Week6 WeeksConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTORSINGLE WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min20 V20 VDrain Current-Max (Abs) (ID)0.915 A0.89 ADrain Current-Max (ID)0.915 A0.75 ADrain-source On Resistance-Max0.23 Ω0.35 ΩFET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORJESD-30 CodeR-PDSO-G3R-PDSO-F3JESD-609 Codee3e3Moisture Sensitivity Level11Number of Elements11Number of Terminals33Operating ModeENHANCEMENT MODEENHANCEMENT MODEOperating Temperature-Max150 °C150 °COperating Temperature-Min-55 °C Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPackage ShapeRECTANGULARRECTANGULARPackage StyleSMALL OUTLINESMALL OUTLINEPeak Reflow Temperature (Cel)NOT SPECIFIED Polarity/Channel TypeN-CHANNELN-CHANNELPower Dissipation-Max (Abs)0.3 W0.55 WQualification StatusNot Qualified Surface MountYESYESTerminal FinishTin (Sn)Tin (Sn)Terminal FormGULL WINGFLATTerminal PositionDUALDUALTime@Peak Reflow Temperature-Max (s)NOT SPECIFIED Transistor ApplicationSWITCHINGSWITCHINGTransistor Element MaterialSILICONSILICON NTA4153NT1G ManufacturerON Semiconductor is a Fortune 500 company driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power and signal management, logic, standard and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and military/aerospace applications. NTA4153NT1G DatasheetYou can download NTA4153NT1G datasheet from the link given below:NTA4153NT1G Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. NTA4153NT1G FAQWhat is N-channel Mosfet?Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). What is a small signal Mosfet?In the small-signal analysis, one assumes that the device is biased at a DC operating point (also called the Q point or the quiescent point), and then, a small signal is super-imposed on the DC biasing point. 1 The DC Bias Point and Linearization–The MOS- FET Case. Why is N-channel mosfet preferred?For example, the N-channel majority carriers (electrons) have a higher mobility than the P-channel majority carriers (holes). Because of this, the N-channel transistor has lower RDS(on) and gate capacitance for the same die area. Thus, for high current applications the N-channel transistor is preferred. How do you identify N and P-channel MOSFET?For n-type enhancement type MOSFETs, a positive gate voltage turns “ON” the transistor and with zero gate voltage, the transistor will be “OFF”. For a p-channel enhancement type MOSFET, a negative gate voltage will turn “ON” the transistor and with zero gate voltage, the transistor will be “OFF”. What are the advantages of N-channel MOSFET over P-channel MOSFET?The N-channel MOSFET has several advantages over the P-channel MOSFET. For example, the N-channel majority carriers (electrons) have a higher mobility than the P-channel majority carriers (holes). Because of this, the N-channel transistor has lower RDS(on) and gate capacitance for the same die area.

CatalogProduct OverviewMBRS340T3G CAD ModelsMBRS340T3G Marking DiagramMBRS340T3G Package DimensionsMBRS340T3G Features MBRS340T3G Mechanical CharacteristicsMBRS340T3G DatasheetMBRS340T3G SpecificationsMBRS340T3G ManufacturerUsing WarningMBRS340T3G FAQ Product OverviewThese devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. MBRS340T3G CAD ModelsFigure: MBRS340T3G PCB Symbol  Figure: MBRS340T3G Footprint  Figure: MBRS340T3G 3D Models MBRS340T3G Marking DiagramFigure: MBRS340T3G Marking Diagram B3x = Device Codex = 2, 3 or 4A = Assembly Location**Y = YearWW = Work Week MBRS340T3G Package DimensionsFigure: MBRS340T3G Package Dimensions MBRS340T3G FeaturesSmall Compact Surface Mountable Package with J-BendLeadsRectangular Package for Automated HandlingHighly Stable Oxide Passivated JunctionVery Low Forward Voltage Drop(0.5 V Max @ 3.0 A, TJ = 25°C)Excellent Ability to Withstand Reverse Avalanche EnergyTransientsGuard-Ring for Stress ProtectionDevice Passes ISO 7637 Pulse #1SBRS8 and NRVB Prefix for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements;AEC−Q101 Qualified and PPAP Capable*These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant MBRS340T3G Mechanical CharacteristicsCase: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 217 mg (Approximately)Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily SolderableLead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 SecondsPolarity: Polarity Band on Plastic Body Indicates Cathode LeadDevice Meets MSL 1 RequirementsESD Ratings:      ♦ Machine Model = C (> 400 V)      ♦ Human Body Model = 3B (> 8000 V) MBRS340T3G DatasheetYou can download the datasheet from the link given below:MBRS340T3G Datasheet MBRS340T3G SpecificationsProduct AttributeAttribute ValueManufacturer:onsemiProduct Category:Schottky Diodes & RectifiersProduct:Schottky DiodesMounting Style:SMD/SMTPackage / Case:SMC (DO-214AB)Configuration:SingleTechnology:SiIf - Forward Current:3 AVrrm - Repetitive Reverse Voltage:40 VVf - Forward Voltage:500 mVIfsm - Forward Surge Current:80 AIr - Reverse Current:2 mAOperating Temperature - Junction-65°C ~ 150°CSeries:MBRS340Brand:onsemiHeight:2.13 mmLength:6.86 mmProduct Type:Schottky Diodes & RectifiersSubcategory:Diodes & RectifiersTermination Style:SMD/SMTType:Schottky DiodeWidth:5.84 mmUnit Weight:0.010582 oz MBRS340T3G ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. MBRS340T3G FAQWhat is Schottky diode rectifier?The Schottky diode or Schottky Barrier Rectifier is named after the German physicist “Walter H. Schottky”, is a semiconductor diode designed with a metal by the semiconductor junction. It has a low-forward voltage drop and a very rapid switching act. What is a Schottky diode used for?Schottky diodes are used for their low turn-on voltage, fast recovery time and low-loss energy at higher frequencies. These characteristics make Schottky diodes capable of rectifying a current by facilitating a quick transition from conducting to blocking state. What is the Schottky diode and how it works?In a Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, thus creating a Schottky barrier. The N-type semiconductor acts as the cathode and the metal side acts as the anode of the diode. This Schottky barrier results in both a low forward voltage drop and very fast switching. What are the Differences Between Diode and Rectifier? A diode is a switching device, while a rectifier is generally used for the conversion of AC voltage to DC voltage. The diode blocks the reverse flow of current. A rectifier, on the other hand, consists of a transformer, a diode, and a filter circuit. What is a schottky diode and its characteristics?The schottky diode is a type of metal – semiconductor junction diode, which is also known as hot-carrier diode, low voltage diode or schottky barrier diode. The schottky diode is formed by the junction of a semiconductor with a metal. Schottky diode offers fast switching action and has a low forward voltage drop.