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Catalog

MMBFJ113 Features

MMBFJ113 Ordering Information

MMBFJ113 Absolute Maximum Ratings

MMBFJ113 Thermal Characteristics

MMBFJ113 Electrical Characteristics

MMBFJ113 Typical Performance Characteristics

MMBFJ113 Physical Dimensions

MMBFJ113 Manufacturer

MMBFJ113 Datasheet

Using Warning

MMBFJ113 FAQ

 

MMBFJ113 Features

  • This device is designed for low level analog switching,sample and hold circuits and chopper stabilized amplifiers.
  • Sourced from process 51
  • Source & Drain are interchangeable.

 

MMBFJ113 Ordering Information

Part Number Top Mark Package Packing Method
MMBFJ113 6S SOT-23 3L Tape and Reel

 

MMBFJ113 Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit
VDG Drain-Gate Voltage 35 V
VGS Gate-Source Voltage -35 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150

 

Notes:

1.These ratings are based on a maximum junction temperature of 150℃.

2.These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations.

 

MMBFJ113 Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max Unit
PD Total Device Dissipation 350 mW
Derate Above 25 2.8 mW/
RΘJC Thermal Resistance, Junction-to-Case   /W
RΘJA Thermal Resistance, Junction-to-Ambient 357 /W

 

Notes:

3.PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4.Device mounted on FR-4 PCB 36m x 18mm x 1.5mm; mounting pad for the collector lead minimum 6cm2.

 

MMBFJ113 Electrical Characteristics

Values are at TA = 25℃ unless otherwise noted.

Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 -35   V
IGSS Gate Reverse Current VGS = -15 V, VDS = 0   -1 nA
VGS(off) Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 μA -0.5 -3 V
ID(off) Drain Cutoff Leakage Current VDS = 5.0 V, VGS = -10 V   1 nA
On Characteristics
IDSS Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 2   mA
rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0   100  
Small Signal Characteristics
Cdg(on) Csg(on) Drain-Gate &Source-Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz   28 pF
Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz   5 pF
Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz   5 pF

Note:

5.Pulse test: pulse width ≤300μs, duty cycle ≤ 2%.

 

MMBFJ113 Typical Performance Characteristics

Common Drain-Source

Figure: Common Drain-Source

 

Parameter Interactions

Figure: Parameter Interactions

 

Transfer Characteristics

Figure: Transfer Characteristics

 

On Resistance vs. Drain Current

Figure: On Resistance vs. Drain Current

 

Normalized Drain Resistance vs. Bias Voltage

Figure: Normalized Drain Resistance vs. Bias Voltage

 

Transconductance vs. Drain Current

Figure: Transconductance vs. Drain Current

 

Output Conductance vs. Drain Current

Figure: Output Conductance vs. Drain Current

 

Capacitance vs. Voltage

Figure: Capacitance vs. Voltage

 

Noise Voltage vs. Frequency

Figure: Noise Voltage vs. Frequency

 

Noise Voltage vs. Current

Figure: Noise Voltage vs. Current

 

Power Dissipation vs. Ambient Temperature

Figure: Power Dissipation vs. Ambient Temperature

 

Switching Turn-On Time vs.Gate-Source Voltage

Figure: Switching Turn-On Time vs.Gate-Source Voltage

 

Switching Turn-Off Time vs. Drain Current

Figure: Switching Turn-Off Time vs. Drain Current

 

MMBFJ113 Physical Dimensions

3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

Figure: 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

 

MMBFJ113 Manufacturer

Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

 

MMBFJ113 Datasheet

You can download the datasheet from the link given below:

MMBFJ113 Datasheet

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

MMBFJ113 FAQ

What is JFET N channel?

The JFET is a long channel of semiconductor material, doped to contain an abundance of positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type). Ohmic contacts at each end form the source (S) and the drain (D).

 

What is JFET switch?

As a reverse-biased PN junction, it firmly opposes the flow of current through it. As a voltage-controlled device, the JFET requires negligible input current. This is an advantageous trait of the JFET over the bipolar transistor: there is virtually zero power required of the controlling signal.

 

What is JFET used for?

The JFET transistors are used as electronically controlled switches, Voltage controlled resistors and as amplifiers. BJT transistors are constructed with the PN-junctions but the JFET transistors have a channel instead of the PN-junctions.

 

MMBFJ113 Documents & Media

Download datasheets and manufacturer documentation for Texas Instruments MMBFJ113.
Datasheets
datasheet

MMBFJ113 PCB Symbol, Footprint & 3D Model

Texas Instruments MMBFJ113

Texas Instruments

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