CatalogMMBFJ113 FeaturesMMBFJ113 Ordering InformationMMBFJ113 Absolute Maximum RatingsMMBFJ113 Thermal CharacteristicsMMBFJ113 Electrical CharacteristicsMMBFJ113 Typical Performance CharacteristicsMMBFJ113 Physical DimensionsMMBFJ113 ManufacturerMMBFJ113 DatasheetUsing WarningMMBFJ113 FAQ MMBFJ113 FeaturesThis device is designed for low level analog switching,sample and hold circuits and chopper stabilized amplifiers.Sourced from process 51Source & Drain are interchangeable. MMBFJ113 Ordering InformationPart NumberTop MarkPackagePacking MethodMMBFJ1136SSOT-23 3LTape and Reel MMBFJ113 Absolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.SymbolParameterValueUnitVDGDrain-Gate Voltage35VVGSGate-Source Voltage-35VIGFForward Gate Current50mATJ, TSTGOperating and Storage Junction Temperature Range-55 to 150℃ Notes:1.These ratings are based on a maximum junction temperature of 150℃.2.These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. MMBFJ113 Thermal CharacteristicsValues are at TA = 25°C unless otherwise noted.SymbolParameterMaxUnitPDTotal Device Dissipation350mWDerate Above 25℃2.8mW/℃RΘJCThermal Resistance, Junction-to-Case ℃/WRΘJAThermal Resistance, Junction-to-Ambient357℃/W Notes:3.PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.4.Device mounted on FR-4 PCB 36m x 18mm x 1.5mm; mounting pad for the collector lead minimum 6cm2. MMBFJ113 Electrical CharacteristicsValues are at TA = 25℃ unless otherwise noted.SymbolParameterConditionsMin.Max.UnitOff CharacteristicsV(BR)GSSGate-Source Breakdown VoltageIG = -1.0 μA, VDS = 0-35 VIGSSGate Reverse CurrentVGS = -15 V, VDS = 0 -1nAVGS(off)Gate-Source Cut-Off VoltageVDS = 15 V, ID = 1.0 μA-0.5-3VID(off)Drain Cutoff Leakage CurrentVDS = 5.0 V, VGS = -10 V 1nAOn CharacteristicsIDSSZero-Gate Voltage Drain CurrentVDS = 15 V, VGS = 02 mArDS(on)Drain-Source On ResistanceVDS ≤ 0.1 V, VGS = 0 100 Small Signal CharacteristicsCdg(on) Csg(on)Drain-Gate &Source-Gate On CapacitanceVDS = 0, VGS = 0, f = 1.0 MHz 28pFCdg(off)Drain-Gate Off CapacitanceVDS = 0, VGS = -10 V, f = 1.0 MHz 5pFCsg(off)Source-Gate Off CapacitanceVDS = 0, VGS = -10 V, f = 1.0 MHz 5pFNote:5.Pulse test: pulse width ≤300μs, duty cycle ≤ 2%. MMBFJ113 Typical Performance CharacteristicsFigure: Common Drain-Source Figure: Parameter Interactions Figure: Transfer Characteristics Figure: On Resistance vs. Drain Current Figure: Normalized Drain Resistance vs. Bias Voltage Figure: Transconductance vs. Drain Current Figure: Output Conductance vs. Drain Current Figure: Capacitance vs. Voltage Figure: Noise Voltage vs. Frequency Figure: Noise Voltage vs. Current Figure: Power Dissipation vs. Ambient Temperature Figure: Switching Turn-On Time vs.Gate-Source Voltage Figure: Switching Turn-Off Time vs. Drain Current MMBFJ113 Physical DimensionsFigure: 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type MMBFJ113 ManufacturerOnsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. MMBFJ113 DatasheetYou can download the datasheet from the link given below:MMBFJ113 Datasheet Using WarningNote: Please check their parameters and pin configuration before replacing them in your circuit. MMBFJ113 FAQWhat is JFET N channel?The JFET is a long channel of semiconductor material, doped to contain an abundance of positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type). Ohmic contacts at each end form the source (S) and the drain (D). What is JFET switch?As a reverse-biased PN junction, it firmly opposes the flow of current through it. As a voltage-controlled device, the JFET requires negligible input current. This is an advantageous trait of the JFET over the bipolar transistor: there is virtually zero power required of the controlling signal. What is JFET used for?The JFET transistors are used as electronically controlled switches, Voltage controlled resistors and as amplifiers. BJT transistors are constructed with the PN-junctions but the JFET transistors have a channel instead of the PN-junctions.