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2N3055G Transistor: Pinout, Datasheet PDF, CAD Models [Video]

  • Contents

The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.

2N3055 Power Transistor Test

Catalog

Product Overview

2N3055G Features

CAD Models

Package Dimensions

2N3055G Product Attributes

2N3055G Applications

Alternate Parts

Using Warnings

2N3055G vs 2N3055


Product Overview

The Bipolar Power Transistor is designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055. In addition, the 2N3055G (NPN) and MJ2955 (PNP) are complementary power transistors. They come in a TO-204AA metal package.


2N3055G Features

• High Current-Gain - Bandwidth
• Safe Operating Area
• These Devices are Pb−Free and are RoHS Compliant
• DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
• Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)


CAD Models

2N3055G Symbol

2N3055G Symbol

 

2N3055G Footprint

2N3055G Footprint


Package Dimensions

Package Dimensions

Package Dimensions


2N3055G Product Attributes

Case/Package:

TO-204-3

Number of Pins:

2

Collector Base Voltage (VCBO):

100 V

Collector Emitter Breakdown Voltage:

60 V

Collector Emitter Saturation Voltage:

3 V

Collector Emitter Voltage (VCEO):

60 V

Current Rating:

15 A

Element Configuration:

Single

Emitter Base Voltage (VEBO):

7 V

Frequency:

2.5 MHz

Gain Bandwidth Product:

2.5 MHz

hFE Min:

20

Max Collector Current:

15 A

Max Frequency:

2.5 MHz

Max Junction Temperature (Tj):

200 °C

Max Operating Temperature:

200 °C

Max Power Dissipation:

115 W

Min Operating Temperature:

-65 °C

Number of Elements:

1

Polarity:

NPN

Power Dissipation:

115 W

Transition Frequency:

2.5 MHz

Voltage Rating (DC):

60 V

Height:

8.51 mm

Length:

39.37 mm

Width:

26.67 mm

Lead Free:

Lead Free

Radiation Hardening:

No

REACH SVHC:

No SVHC

RoHS:

Compliant

Country Of Origin:

Mexico

ECCN:

EAR99

HTSN:

8541290095

SCHEDULE B:

8541290080


2N3055G Applications

Industrial


Alternate Parts

2N3055, JANTX2N3055, JAN2N3055, 2N3055AR1, 2N3055R1, BDX10R1, 2N3055A, BDX10C, 2N3055E3


Using Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.


2N3055G vs 2N3055

Specifications

2N3055G

2N3055

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Contact Manufacturer

Ihs Manufacturer

ON SEMICONDUCTOR

HI-TRON SEMICONDUCTOR CORP

Part Package Code

TO-3

TO-204AA

Package Description

FLANGE MOUNT, O-MBFM-P2

FLANGE MOUNT, O-MBFM-P2

Pin Count

2

2

Manufacturer Package Code

1-07

*

Reach Compliance Code

not_compliant

unknown

ECCN Code

EAR99

EAR99

HTS Code

8541.29.00.95

*

Factory Lead Time

1 Week

*

Case Connection

COLLECTOR

*

Collector Current-Max (IC)

15 A

15 A

Collector-Emitter Voltage-Max

60 V

60 V

Configuration

SINGLE

Single

DC Current Gain-Min (hFE)

5

20

JEDEC-95 Code

TO-204AA

TO-3

JESD-30 Code

O-MBFM-P2

O-MBFM-P2

JESD-609 Code

e3

e0

Number of Elements

1

1

Number of Terminals

2

2

Operating Temperature-Max

200 °C

200 °C

Operating Temperature-Min

-65 °C

*

Package Body Material

METAL

METAL

Package Shape

ROUND

ROUND

Package Style

FLANGE MOUNT

FLANGE MOUNT

Peak Reflow Temperature (Cel)

260

*

Polarity/Channel Type

NPN

NPN

Power Dissipation-Max (Abs)

115 W

115 W

Qualification Status

Not Qualified

Not Qualified

Surface Mount

NO

NO

Terminal Finish

Tin (Sn)

Tin/Lead (Sn/Pb)

Terminal Form

PIN/PEG

PIN/PEG

Terminal Position

BOTTOM

BOTTOM

Time@Peak Reflow Temperature-Max (s)

40

*

Transistor Application

SWITCHING

*

Transistor Element Material

SILICON

SILICON

Transition Frequency-Nom (fT)

2.5 MHz

0.8 MHz

Base Number Matches

1

1

Rohs Code

*

No

Pbfree Code

 Yes

*


FAQ

  • What is the Transistor Mounting of 2N3055G?

Through Hole

 

  • What is the Max Operating Temperature of 2N3055G?

200°C

 

  • What is the Maximum Collector Emitter Voltage of 2N3055G? 

60 V

 

  • What is the Maximum Collector Base Voltage of 2N3055G? 

100 V

 

  • What is the Maximum Power Dissipation of 2N3055G? 

115000 mW

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