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Warm hints: The word in this article is about 1000 and the  reading time is about 6 minutes.SummaryFujitsu,a company that provide innovative IT services and digital technologies like mobile,AI,cloud or etc,announced the development of a gallium-nitride(GaN) high-electron mobility transistor(HEMT) power amplifier for use in W-band(75-110 GHz)transmissions in July 2017 at the 12th international Conference. To realize long-distance,high-capacity wireless communications,a promising approach is to utilize the W-band and other high frequency bands that encompass a broad range of usable frequencies, and increase output with a transmission power amplifier. At the same time, demand exists for improved efficiency in power amplifiers in order to mitigate the increased power consumption of communication systems. Fujitsu has now succeeded in developing a power amplifier for use in W-band transmissions that offers both high output power and high efficiency, improving transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance. Fujitsu has achieved 4.5 watts per millimeter of gate width, the world's highest output density in the W-band, and has confirmed a 26% reduction in energy consumption compared to conventional technology. Fujitsu anticipates that setting this power amplifier between wireless communication systems in two locations will achieve high-bandwidth communications at 10 gigabits per second (Gbit/s) over a distance of 10km. Part of this research was carried out with support from Innovative Science and Technology Initiative for Security, established by the Acquisition, Technology & Logistics Agency (ATLA), Japan Ministry of Defense. Development Background Wireless data traffic from mobile communications has increased dramatically over the last few years, and with the spread of 5G and IoT devices it is predicted to increase at an annual growth rate of 1.5 times until the year 2020. In order to build this sort of high capacity next-generation wireless communications network, attention has been focused on wireless communication technology using the high frequency W-band. The range of frequencies that can be used in the W-band is very broad, and because communication speed can be rapidly increased in this band, it is well-suited for this kind of high bandwidth wireless communication. Conventional wireless communications technology, has allowed for performance of several Gbit/s over distances of several kilometers, but achieving an even greater increase in wireless communication distance and capacity utilizing the W-band demands further increases to the output of power amplifiers to boost signals during transmission. Issues To increase distance and capacity, it will be necessary to expand the frequency bandwidth that can be amplified while simultaneously supporting modulation methods that can transmit more information within the same frequency bandwidth, and a strong requirement is to have less distortion when the signal is amplified. Another pursuit is keeping in check the energy consumption of communication systems that accompanies greater distances and capacities, and the improved energy efficiency in power amplifiers.In order to both increase the distance and capacity of wireless communications and decrease energy consumption with indium-aluminum-gallium-nitride (InAlGaN) HEMTs, Fujitsu has developed two technologies that effectively reduce internal resistance and current leakage. Features of the newly developed technologies are as follows: Technology to reduce internal resistance Fujitsu has developed device technology that can reliably reduce resistance to one tenth that of previous technology when current flows between the source or drain electrodes and the GaN-HEMT device. The technology utilizes a manufacturing process that embeds GaN plugs directly below the source and drain electrodes, which generate electrons at high densities (fig. 1). It is necessary to transport the electrons that come from the source electrode to the two dimensional electron gas field as smoothly as possible. The structure of the previous technology causes the electron supply layer to become a barrier, however, and internal resistance increases between the source electrode and the two dimensional electron gas. By applying this new technology, Fujitsu succeeded in running high currents through the transistor with significantly less resistance (fig. 2). Technology to control current leakageA current leakage occurs when the two dimensional electron gas, which moves at high speed on the boundary at the top of the channel layer, takes a detour below the gate when the transistor is in its off-state. This leakage causes deterioration in the operational performance of the power amplifier. Normally, it is possible to reduce current leakage by placing a barrier layer beneath the channel layer, but in that case the amount of two dimensional electron gas also decreases, and leads to a reduction of the drain current. This new technology maintains high drain currents by effectively distributing indium-gallium-nitride (InGaN) to create a barrier layer below the channel layer. This reduces electron detours during operation, successfully providing significant reductions in current leakage(just see the fist and second picture).Effects The previous world record for power amplifier output density in the W-band for transmitters was 3.6 watts per millimeter of gate width with technology developed by Fujitsu Laboratories. This has improved significantly with the newly developed technology, which delivers power output of 4.5 watts per millimeter of gate width for a power amplifier designed to operate at 94GHz. In addition, this new technology achieved a reduction in energy consumption of 26% compared to the previous technology through a reduction in current leakage. It is anticipated that the use of this power amplifier will allow the achievement of high capacity, long distance wireless communications between two connected systems at different locations at over 10Gbit/s and at distances greater than 10km.Fujitsu aims to apply this technology broadly to the development of power amplifiers for purposes that call for wireless communications that offer long range and higher capacity, while offering easier installation than fiber optics. The goal is to commercialize this technology in high speed wireless communication systems by 2020, with an aim to employ it in such situations as a method of restoring communications when fiber optic cables have been severed by natural disasters or as a way of setting up temporary communications infrastructure when holding events.  Article provide by FujitsuArticle edited by kynix

Fujitsu Semiconductor Limited today announced the launch of the 4 Mbit ReRAM MB85AS4MT, the world's largest density mass-produced ReRAM product. This is the first ReRAM product to be jointly developed with Panasonic Semiconductor Solutions Co., Ltd.The MB85AS4MT is an SPI-interface ReRAM product that operates with a wide range of power supply voltage, from 1.65V to 3.6V. It features an extremely small average current in read operations of 0.2mA at a maximum operating frequency of 5MHz.It is optimal for battery operated wearable devices and medical devices such as hearing aids, which require high density, low power consumption electronic components.Up to this point, Fujitsu Semiconductor has contributed to resolving issues for clients with a need for specifications with greater performance than conventional non-volatile memory, such as EEPROM and serial flash memory, by providing FRAM products, which have such features as high read/write endurance and low power consumption. By adding the new 4 Mbit ReRAM MB85AS4MT to its lineup, Fujitsu Semiconductor can now further expand the options it offers to meet the diversifying needs of its customers.This product features the ability to operate with a wide range of power supply voltage, from 1.65V to 3.6V, can be operated at a maximum of 5MHz through an SPI interface, and uses extremely small average current during read operations (0.2mA operating at 5MHz). It offers the industry's lowest power consumption for read operations in non-volatile memory.The package is a 209mil 8 pin small outline package (SOP), pin-compatible with other non-volatile memory products such as EEPROM. Fujitsu Semiconductor has mounted a 4 Mbit memory density, exceeding the maximum density of serial interface EEPROM, in a miniature 8-pin SOP package size.Fujitsu Semiconductor expects that the MB85AS4MT, featuring high density and low power consumption, will be used in battery-operated wearable devices, medical devices such as hearing aids, and IoT devices such as meters and sensors.Going forward, Fujitsu Semiconductor will continue to provide products and solutions aimed at improving the value and convenience of customers' applications.Reference:GP1S036PKGS-00GXP1-RRB-3R0232-50PKGS-25SXAP1-R 

With increasing OEM development of compact and low-cost Bluetooth low energy (BLE) devices and accessories, Fujitsu Components America has introduced a new family of ultra-compact, BLE modules based on the Nordic Semiconductor nRF51822 System-on-Chip (SoC). The modules provide an economical means for developers to reduce their time-to-market.Fujitsu's new MBH7BLZ01-109003 and MBH7BLZ02-109004 Bluetooth low energy modules are among the smallest on the market. Bluetooth V4.0 single-mode compliant, the modules allow OEMs to quickly develop tiny, power-conscious and cost-efficient Bluetooth Smart consumer devices, such as medical monitors, proximity sensors, smart watches and fitness monitors, as well as emerging applications, such as 3D motion sensors and environmental sensors.Fujitsu offers two versions: A 10.5 x 9.2 x 1.6 mm surface-mount module without antenna, and a 15.7 x 9.8 x 2.0 mm surface-mount module with antenna. The modules feature a built-in MCU, which allows adding upper layer profiles including private profiles and application code. With development tools available from Nordic Semiconductor, it is possible to implement specific processing into the module and compose functions without using an additional MCU. These blank modules contain the complete verified and qualified Bluetooth® low energy protocol stack, offering flexibility and a high level of customization.Nordic Technical Support Center has a range of development tools and reference designs to quickly implement specific processing into the modules. The Nordic Semiconductor nRF51822 SoC is built around a 32-bit ARM Cortex M0 CPU with 256kB flash + 16kB RAM. The separation of protocol stack and application code allows engineers to focus on developing the application code for Bluetooth Smart accessories with assurance that the protocol stack is fully tested and can't be corrupted by application software development. Currently available reference designs include keyboard, mouse and advanced navigation remotes.According to Bob Thornton, Fujitsu Component America's President, combining Fujitsu's proven module packaging technology, distribution network, environmental responsibility and customer privacy with Nordic Semiconductor's ultra-low power SoC, application software development and technical support is a win-win. "Developers will have everything they need to create next-generation BLE products quickly and at a low cost," he said.J. Darren O'Donnell, Director of Marketing & Sales - Americas at Nordic Semiconductor, agreed. "We are pleased to work with Fujitsu to offer the design community an ultra-compact, ultra-low power, single-chip solution that allows engineers to develop a range of Bluetooth low energy and 2.4GHz proprietary designs for cost, power, and size-constrained applications," he said.Reference:KY45-DL16-7PCBA3KY45-DL100-7-PCBA3KY45-ZEPIR0BBS02MODG