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Executive Summary: Transistors in 2026The semiconductor transistor remains the fundamental building block of modern electronics. As of January 2026, the industry has shifted toward Gate-All-Around (GAAFET) architectures at the 2nm process node, enabling AI chips like NVIDIA's Blackwell B200 to pack over 208 billion transistors. This guide updates legacy concepts with 2026 standards, covering operation modes, NPN/PNP switching circuits, and the latest market statistics approaching a $1 Trillion valuation.What is a Semiconductor Transistor in 2026?A semiconductor transistor is an active semiconductor device used to amplify, control, and generate electrical signals and power. It functions as a variable current switch capable of controlling output current based on input voltage. Unlike ordinary mechanical switches (such as relays), transistors use electrical signals to control their own opening and closing, allowing for switching speeds in the gigahertz (GHz) range—critical for modern 5G and AI applications.Key 2026 Insight: While traditional Bipolar Junction Transistors (BJTs) are still used in analog circuits, modern high-speed computing relies on GAAFET (Gate-All-Around Field Effect Transistor) technology, which has replaced FinFET at the 3nm and 2nm nodes to minimize power leakage.Video: Transistors Basics Explained Ⅰ How do Electrons and Holes Function in a Transistor?The transistor is a current-controlled device (BJT) or voltage-controlled device (FET) that facilitates signal amplification, oscillation, and modulation. Its operation relies on the movement of charge carriers: electrons (negative charge) and holes (positive charge carriers).A standard BJT has three terminals (Emitter, Base, Collector), three regions, and two PN junctions. Understanding the internal structure is key to grasping how 2026 hardware manages billions of switching operations per second.Figure 1. Transistor Structure (NPN Configuration)Movement of Charge Carriers:Figure 2. Movement of Charge CarriersHoles vs. Electrons: The hollow circles in Figure 2 represent positively charged holes, while solid dots are negatively charged electrons. "Hole movement" is effectively the macroscopic result of electrons filling vacancies.Emitter (E): Heavily doped to emit a large number of electrons. When forward-biased, it injects carriers into the base.Base (B): Very thin and lightly doped. In an NPN transistor, the P-type base allows most electrons from the emitter to diffuse directly to the collector, with very few recombining with holes (creating the small base current, IB).Collector (C): Large surface area designed to collect electrons drifting through the base. It dissipates the most heat, especially in power transistors used in 2026 EV inverters.Current Equation: IE (Emitter Current) = IC (Collector Current) + IB (Base Current).Ⅱ What are the Key Characteristics of Transistors?Transistors define the logic of all digital circuits. Their behavior is governed by the following core principles:1) Current Control (BJT): The small base current (IB) controls the large collector current (IC).NPN Current Direction: Base → Emitter.PNP Current Direction: Emitter → Base.2) Amplification Factor (β): Transistors amplify signals by a factor of β (Beta). If IB = 1mA and β = 100, then IC = 100mA. This principle amplifies weak sensor signals in IoT devices.3) Saturation (Switch ON): When IB is sufficient (e.g., ≥1mA for small signal transistors), the voltage drop Vce ≈ 0.3V. The transistor acts as a closed switch.4) Cutoff (Switch OFF): When Vbe < 0.7V (for Silicon), the transistor is fully off. Vce is high (equal to supply voltage), acting as an open switch.Design Tip for 2026: For NPN switching circuits, connect the load to the Collector and the Emitter to Ground (GND). For PNP, connect the Emitter to Power (VCC) and the load to the Collector. NPN is generally preferred in modern logic due to higher electron mobility compared to hole mobility. Ⅲ What are the Three Operational Regions of a Transistor?To effectively use a transistor in AI hardware or power regulators, one must understand its three operational states: Cut-off, Active, and Saturation.Figure 3. Transistor Circuit And Operational Regions(1) Cut-off Region (Digital "0"): The transistor is OFF. Ube < Threshold (0.7V). IB = 0, IC ≈ 0. The switch is open.(2) Active Region (Amplification): Used for analog signal processing (audio, radio). The Emitter junction is forward-biased, and the Collector junction is reverse-biased. IC = β * IB.(3) Saturation Region (Digital "1"): The transistor is fully ON. Both junctions are forward-biased. IC cannot increase further even if IB increases. Uce is minimal (~0.2V).In embedded systems and logic gates (like those in the newest 2nm chips), transistors toggle rapidly between Cut-off and Saturation, avoiding the Active region to minimize power loss.Figure 4. Voltage CharacteristicⅣ How to Analyze Input and Output Characteristics?4.1 Input CharacteristicsThe input characteristic curve relates the base current (IB) to the base-emitter voltage (VBE). It resembles the curve of a standard diode.Figure 5. Input CharacteristicWhen VCE increases, the collector's ability to "sweep" electrons improves, slightly reducing the recombination in the base. This shifts the curve to the right, meaning less IB flows for the same VBE.4.2 Output CharacteristicsThe output characteristic relates the collector current (IC) to the collector-emitter voltage (VCE) for various fixed values of IB.Figure 6. Output CharacteristicUnderstanding the Graph: The horizontal axis is VCE. The initial steep rise is the Saturation Region (switch closed). The flat horizontal lines represent the Active/Amplification Region, where IC is constant regardless of VCE (acting as a constant current source controlled by IB). Ⅴ What Causes Saturation and Cutoff Distortion?Signal distortion occurs when a transistor amplifier is improperly biased, causing the output waveform to be "clipped" at the top or bottom.5.1 Waveform Analysis of Basic Common Emitter Amplifier CircuitFigure 7. Waveform Analysis of Common-emitter Amplifier CircuitSaturation Distortion (Bottom Clipping): Occurs when the static operating point (Q-point) is too high. IB is too large, causing UCE to drop near 0V during the positive half-cycle of the input.Cutoff Distortion (Top Clipping): Occurs when the Q-point is too low. IB is too small, causing the transistor to turn OFF during the negative half-cycle of the input.5.2 Why use Transistors as Switches?Feasibility: The distinct "ON" (Saturation) and "OFF" (Cutoff) states allow transistors to replace mechanical switches. Modern SiC (Silicon Carbide) transistors can switch high voltages in EVs with minimal efficiency loss.Necessity: Microcontrollers (CPUs/MCUs) operate at low voltages (3.3V or 5V) and cannot directly drive high-power loads like motors or LED arrays. A transistor acts as the bridge, allowing a weak software signal to control massive power. Ⅵ How to Design Transistor Switching Circuits?6.1 Basic Switching Circuit of NPN TransistorsFigure 8. NPN Transistor Switch CircuitLow-Side Switching: In an NPN circuit, the Load (R1) is connected between VCC and the Collector. The Emitter connects to Ground. When the Base receives a High signal (e.g., 3.3V from a GPIO pin), current flows from C to E, turning the load ON.6.2 Basic Switching Circuit of PNP TransistorsFigure 9. Basic Switching Circuit of PNP TransistorHigh-Side Switching: Common PNP models like the 8550 are used here. The Emitter connects to VCC. The Load connects between the Collector and Ground. Logic: A LOW signal (0V) at the Base turns the PNP transistor ON. A HIGH signal turns it OFF. This is often used for driving buzzers or indicators where the ground path must remain common. Ⅶ Frequently Asked Questions About Transistors (2026 Update)1. How does a semiconductor transistor work?A transistor works by using a small control current at the Base (or voltage at the Gate) to regulate a much larger current flowing between the Collector and Emitter (or Source and Drain). This allows it to act as an amplifier or a high-speed electronic switch.2. How is a transistor used as a switch?The transistor operates as a solid-state switch by toggling between the Cutoff region (Open circuit, OFF) and the Saturation region (Short circuit, ON). It eliminates moving parts, allowing for billions of operations per second in modern CPUs.3. What is the PN junction of a transistor?A BJT contains two PN junctions. The Emitter-Base junction is forward-biased to inject carriers, while the Collector-Base junction is typically reverse-biased to collect them. These junctions form the potential barriers that control current flow.4. How many PN junctions are there in a transistor?2 PN JunctionsA Bipolar Junction Transistor (BJT) has two PN junctions (Base-Emitter and Base-Collector). Field Effect Transistors (FETs) rely on channel conductivity rather than junction injection.5. What are the two basic types of transistors?The two primary categories are Bipolar Junction Transistors (BJT) (current-controlled) and Field Effect Transistors (FET) (voltage-controlled). As of 2026, FETs (specifically MOSFETs and GAAFETs) dominate digital electronics.6. What are the terminals of a transistor called?For BJTs: Emitter, Base, and Collector. For FETs/MOSFETs: Source, Gate, and Drain.7. What is the difference between NPN and PNP?An NPN transistor turns ON with a positive current to the Base (High-Side control usually requires voltage > Emitter). A PNP transistor turns ON when the Base is pulled Low (voltage < Emitter). NPN is more common in switching applications due to better electron mobility.8. What is the most popular transistor in 2026?The MOSFET remains the most widely used transistor globally, accounting for 99.9% of all transistors. However, for cutting-edge AI chips (like NVIDIA Blackwell), GAAFET (Gate-All-Around) is the new standard, while SiC and GaN dominate power electronics in electric vehicles.{ "@context": "https://schema.org", "@type": "Article", "headline": "What is a Semiconductor Transistor? 2026 Comprehensive Guide", "datePublished": "2019-01-01", "dateModified": "2026-01-05", "description": "A deep dive into semiconductor transistors, covering electrons/holes, NPN/PNP characteristics, and 2026 industry standards like GAAFET and AI chip architectures.", "author": { "@type": "Organization", "name": "Kynix Semiconductor" }, "mainEntity": { "@type": "FAQPage", "mainEntity": [ { "@type": "Question", "name": "How does a semiconductor transistor work?", "acceptedAnswer": { "@type": "Answer", "text": "A transistor works by using a small control current at the Base (or voltage at the Gate) to regulate a much larger current flowing between the Collector and Emitter, effectively acting as an amplifier or switch." } }, { "@type": "Question", "name": "What are the two basic types of transistors?", "acceptedAnswer": { "@type": "Answer", "text": "The two main types are Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). In 2026, FETs (specifically MOSFETs and GAAFETs) are the dominant technology for digital processors." } }, { "@type": "Question", "name": "How acts a transistor as a switch?", "acceptedAnswer": { "@type": "Answer", "text": "It acts as a switch by driving the transistor into saturation (fully ON) or cutoff (fully OFF), thereby completing or breaking the circuit path for the load." } }, { "@type": "Question", "name": "What is the difference between NPN and PNP transistors?", "acceptedAnswer": { "@type": "Answer", "text": "NPN transistors are 'active high' switches that turn on when current enters the base. PNP transistors are 'active low' switches that turn on when the base is pulled to ground." } } ] }}

IntroductionA p-n junction is an interface or a boundary between n-type and p-type semiconductor materials, inside a semiconductor. One of the crucial keys to solid state electronics is the nature of the P-N junction. For example, a PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. And the p-side or the positive side of the semiconductor has an excess of holes and the n-side or the negative side has an excess of electrons. Why pn junction exists? and How does it work? What is p-n junction diode?PN Junction IntroductionCatalogIntroductionIntroductionⅠ PN Junction Basic1.1 PN Semiconductor1.2 PN Junction ReviewⅡ PN Junction Characteristic2.1 Unidirectional Conductivity2.2 Reverse Breakdown2.3 Volt-Ampere Characteristic2.4 Capacitance CharacteristicⅢ Typical Example: Transistor PN JunctionⅠ PN Junction Basic1.1 PN SemiconductorN-type SemiconductorIn silicon crystal (or germanium crystal) doped with a small amount of impurity phosphorus element (or antimony element), since semiconductor atoms (such as silicon atoms) are replaced by impurity atoms, among the five outer electrons in the outer layer of phosphorus atoms four of them form covalent bonds with the surrounding atoms, and the extra electron is almost unbound and becomes a free electron more easily. Therefore, the N-type semiconductor has become a semiconductor with a higher concentration of electrons, and its conductivity is mainly due to the conduction of free electrons.P-type SemiconductorIn silicon crystal (or germanium crystal) doped with a small amount of impurity boron element (or indium element), since semiconductor atoms (such as silicon atoms) are replaced by impurity atoms, the three outer electrons in the outer layer of boron atoms and a semiconductor atom form a covalent bond, at this time, a "hole" is generated. This hole may attract bound electrons to "fill", making the boron atom a negatively charged ion. In this way, this type of semiconductor has a higher concentration of "holes" ("corresponding to" positive charges) and becomes a substance capable of conducting electricity.1.2 PN Junction ReviewP-N junction is formed by joining n-type and p-type semiconductor materials, which is a two terminal device that allows electric current in one direction and blocks electric current in another direction.Figure 1. How is PN Junction FormedOn a silicon wafer, different doping processes are used to form an N-type semiconductor on one side and a P-type semiconductor on the other side. We call the area near the interface of the two semiconductors a PN junction.After the P-type semiconductor and the N-type semiconductor are combined, since the free electrons in the N-type region are more and the holes are less, the concentration difference between electrons and holes appears at their junction. Due to the difference in the concentration of free electrons and holes, some electrons will diffuse from the N-type region to the P-type region, and some holes will diffuse from the P-type region to the N-type region. As a result of their diffusion, the P region loses holes, leaving negatively charged impurity ions, and the N region loses electrons, leaving positively charged impurity ions. The ions in the semiconductor cannot move arbitrarily in an open circuit, so they do not participate in conduction. These immovable charged particles form a space charge zone near the interface between the P and N zones. The thickness of the space charge zone is related to the concentration of dopants.After the space charge region is formed, due to the interaction between the positive and negative charges, an internal electric field is formed in the space charge region, the direction of which is from the positively charged N region to the negatively charged P region. Obviously, the direction of this electric field is opposite to the direction of carrier diffusion, which used to prevent diffusion.On the other hand, this electric field will cause the minority carrier holes in the N region to drift to the P region, and the minority carrier electrons in the P region to drift to the N region. The direction of the drift movement is just opposite to the diffusion movement. The holes drifting from the N region to the P region supplement the holes lost in the P region on the original interface, and the electrons drifting from the P region to the N region supplement the electrons lost in the N region on the original interface, which makes the electric charge is reduced and the internal electric field is weakened. Therefore, the result of drift motion is to narrow the space charge region and strengthen the diffusion motion.Finally, the diffusion of multiple carriers and the drift of minority carriers reach a dynamic balance. On both sides of the junction surface of the P-type semiconductor and the N-type semiconductor, a thin ion layer is left. The charge area formed by this thin ion layer is called a PN junction. The direction of the internal electric field of the PN junction points from the N to the P. It is also called the depletion layer, because lack of electrons.Figure 2. PN Junction Depletion RegionⅡ PN Junction Characteristic2.1 Unidirectional Conductivity(1) The PN junction is turned on when the forward voltage is applied.If the positive pole of the power supply is connected to the P area and the negative pole is connected to the N area, a part of the applied forward voltage is in the PN junction area, at this time, the PN junction is in a forward bias. The current flows from the P to the N, and the holes and electrons move to the interface, which narrows the space charge area. In addition, the current can pass smoothly. Its direction is opposite to the direction of the electric field in the PN junction, which weakens the internal electric field. As a result, the resistance of the internal electric field to the diffusion movement of the multitons weakens, and the diffusion current increases. The diffusion current is much larger than the drift current, and the influence of the drift current can be ignored, and the PN junction is in low resistance.(2) PN junction is cut off when reverse voltage is applied.If the positive pole of the power supply is connected to the N zone, the negative pole is connected to the P zone, and a part of the applied reverse voltage applies in the PN junction zone, and it is in reverse bias. Then the holes and electrons move away from the interface, which widens the space charge area, and the current cannot flow. The direction is the same as the direction of the electric field in the PN junction, which strengthens the internal electric field. The resistance of the internal electric field to the multiton diffusion movement is enhanced, and the diffusion current is greatly reduced. At this time, the drift current formed by the minority carriers in the PN junction region under the action of the internal electric field is greater than the diffusion current. The diffusion current can be ignored, and the PN junction exhibits high resistance.2.2 Reverse BreakdownWhen a reverse voltage is applied to the PN junction, the space charge region becomes wider and the electric field in the region strengthens. When the reverse voltage increases to a certain level, the reverse current will suddenly increase. If the external circuit cannot limit the current, the current will be so large that it will burn the PN junction. At this time, it is called the breakdown voltage. There are two basic breakdown ways, namely tunnel breakdown (also called Zener breakdown) and avalanche breakdown. The former has a breakdown voltage of less than 6V and has a negative temperature coefficient, and the latter has a breakdown voltage of greater than 6V and a positive temperature coefficient.2.3 Volt-Ampere CharacteristicThe volt-ampere characteristics of the PN junction are shown in the Figure 3, which visually shows the unidirectional conductivity.Figure 3. Volt-Ampere Curve of the PN JunctionThe volt-ampere characteristic shows by Where iD is the current passing through the PN junction, VD is the applied voltage at both ends of the PN junction, and VT is the voltage equivalent of temperature.2.4 Capacitance CharacteristicWhen a reverse voltage is applied to the PN junction, the positive and negative charges in the space charge region constitute a capacitive device. Its capacitance changes with the applied voltage, mainly including barrier capacitance (CB) and diffusion capacitance (CD). Both of them are non-linear capacitors. Ⅲ Typical Example: Transistor PN JunctionTransistors are one of the basic building blocks of modern electronics. In the diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material to form a simple pn-junction. While the transistor is a three terminal solid state device which is formed by connecting two diodes back to back. Hence it has got two PN junctions.Transistor NPN-Type and PNP-Type JunctionsTransistor Working StateThe transistor works like an electronic switch. It can turn a current ON and OFF. The basic idea behind a transistor is that it lets you control the flow of current through one channel by varying the intensity of a much smaller current that's flowing through a second channel.1) Cut-off State (C): The base current is zero.2) Amplified State (A): The transmitter junction is forward biased (that is, the voltage direction is P->N), and the collector junction is reverse biased.3) Saturation State (S): Both the emitter junction and the collector junction are forward biased.Working StateNPN-Type TransistorPNP-Type TransistorVb<Ve (C)Vc>Vb>Ve (A)Vb>Ve Vb>Vc (S)Vb>Ve (C)Vc<Vb<Ve (A)Vb<Ve Vb<Vc (S)In Figure (a), when there is no voltage input at b of the NPN transistor, no current flows between c and e, and the triode is in the cut-off state.In Figure (b), when a positive voltage is input to b of the NPN transistor, the negative electrons in the N region of e are attracted by the positrons of P region in b. Due to the effect of the power plant, and they rush (diffuse) to the base region, however, only part of the negative electrons collide with the positive electrons (recombination) to generate the base current, and the other part of the negative electrons gather near the collector junction. The negative electrons gathered in the collector junction pass through (drift) the collector junction due to the action of the electric field. After reaching the collector area, it collides with the positrons gathered in c (N-type semiconductor terminal) to generate a collector current.It can be seen from this that the greater the base current, the greater the collector current. That is, when a small current is input to the collector, a large current can be obtained by the collector, and now the transistor is in an amplified state.It should be noted that when the base current reaches a certain level, the collector current no longer rises. At this time, the transistor loses its current amplification effect, and the voltage between the collector and the emitter is very small. The collector and emitter are equivalent to the on-state of the switch. At this moment, the transistor is in a saturated state.The working principle of the PNP transistor is the same as that of the NPN transistor, except that the direction of the bias voltage and the current are opposite, and the roles of electrons and holes are reversed. The PNP transistor uses Veb to control the positrons incident on the collector area from the emitter area through the base area, while the NPN transistor uses Vbe to control the negative electrons that enter the collector area from the emitter area through the base area.In addition, in a low-power design, the transistor control circuit will have a certain impact on the circuit. No matter it is NPN or PNP, there will be leakage current in the PN junction of the transistor. When the I/O controls the base voltage, in order to stabilize the base voltage, a pull-down resistor is generally added to the base of the NPN switch circuit. In the design of the PNP switch circuit, a pull-down resistor is added to the base. The pull-up and pull-down resistors are selected according to the control chip, transistor and circuit voltage. Frequently Asked Questions about PN Junctions Formed1. What is PN junction and how it is formed?P-n junctions are formed by joining n-type and p-type semiconductor materials, as shown below. ... However, in a p-n junction, when the electrons and holes move to the other side of the junction, they leave behind exposed charges on dopant atom sites, which are fixed in the crystal lattice and are unable to move. 2. What is p-type and n-type?In silicon doping, there are two types of impurities: n-type and p-type. In n-type doping, arsenic or phosphorus is added in small quantities to the silicon. ... In p-type doping, boron or gallium is used as the dopant. These elements each have three electrons in their outer orbitals. 3. What is a PN junction diode?A PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. ... By applying a negative voltage (reverse bias) results in the free charges being pulled away from the junction resulting in the depletion layer width being increased. 4. What happens in a PN junction?A forward-biased PN junction conducts a current once the barrier voltage is overcome. The external applied potential forces majority carriers toward the junction where recombination takes place, allowing current flow. A reverse-biased PN junction conducts almost no current. 5. What is a PN junction used for?A p-n junction diode is a two terminal device that allows electric current in one direction and blocks electric current in another direction. In forward bias condition, the diode allows electric current whereas in reverse bias condition, the diode does not allow electric current.

An entirely new model of the way electrons are briefly trapped and released in tiny electronic devices suggests that a long-accepted, industry-wide view is just plain wrong about the way these captured electrons affect the behavior of hardware components such as flash memory cells. The model which devised by scientists at the National Institute of Standards and Technology (abbreviation NIST),a measurement standards laboratory, and a non-regulatory agency of the United States Department of Commerce and its mission is to promote innovation and industrial competitiveness, was test to explain how electron capture and emission creates the insidious nosise that increasingly threatens performance as electronic devices continue to shrink in size.   KIN Cheung, NIST researcher Kin Cheung also the lead author of a new report in IEEE Transactions on Electron Devices said "Such a burst noise,popcorn noise or random telegraph noise(abbreviation RTN) have become a major problem for extremely small devicess". Charge trapping is one of the known causes of flash memory failure. The new model, which NIST physicist John Kramar called "a major paradigm shift in charge-trapping modeling," could lead to a different approach to manage this problem, and potentially, a new way of making the memory cells smaller. John Kramar explained:" Charge trapping is one of the known causes of flash memory failure,the new model whicl I called it a major paradigm shift in charge-trapping modeling,could lead to a different approach to manage this problem,and potentially,a new way of making the memory cells smaller.  What is RTN noise? RTN noise consists of abrupt random drops in voltage or current caused by itinerant electrons that are briefly captured from, and then rejoin, the main flow along a current channel in, for example, a common type of transistor called a MOSFET. "The effect was mostly negligible back in the good old days when devices were larger and there were lots of electrons flowing around," Cheung said. But in today's advanced devices, with feature dimensions in the range of 10 nanometers (nm, billionths of a meter) or less, the active area is so small that it can be swamped by a single trapped charge. "As you get down to the very smallest sizes, RTN can be nearly 100 percent as strong as the signal you're trying to measure," Cheung said. "In those conditions, reliability disappears." In the case of RTN, the basics are known: The noise is caused by the action of electrons near the interface between two materials such as an insulator layer and the bulk of the semiconductor in a transistor. Specifically, an electron is pulled out of the current flow and trapped in a defect in the insulator; after a short time, it is emitted back into the main current in the semiconductor. What actually happens on the atomic scale at each stage of the process, however, is incompletely understood. The orthodox approach to account for those effects is to treat all the trapped electrons as a single 2-D sheet of charge that extends uniformly across the center of the insulator. Each emitted electron is thought to return to the semiconductor in a reverse of the same process by which it was captured, causing very little change in the presumably stable state along the insulator/semiconductor boundary. The model is suitable for very small devices,however,it didn't make sense to the NIST scientists. Among other difficulties, it ignored the fact that, once they are immobilized, electrons cause considerable distortions in local electrical field conditions along the boundary, affecting current flow. "We're saying the traditional way doesn't really work," Cheung said. "You have to rethink this thing. The old model doesn't make reasonable assumptions about how charge carriers behave." The researchers proposed a new model, based on local effects, in which the mechanisms of capture and emission are dramatically different from the standard picture. For one thing, they determined that quantum mechanics, the modern theory that describes the behavior of these systems, makes it hugely improbable, if not impossible, for electrons to get out of the insulator the same way they got in. "It's like a highway where there is an exit ramp, but there's no on ramp," says NIST co-author Jason Campbell. "You can go in, but you can't come back that way. You've got to come back a different way. That is, there is a set of rules for capture that don't apply to emission." "When you realize that the capture and emission processes are decoupled," Cheung added, "you quickly have a very different view of the problem."  The standard RTN picture supposes a weak interaction of trapped charge with its local surroundings―in this case, the highly separated electric charge in the silicon dioxide that often makes up the insulator layer in a transistor. NIST scientists found that a weak interaction is inconsistent with known physics and not in agreement with reports from two independent laboratories. Indeed, the interaction energy of a captured electron can be more than 10 times greater than previously believed. Recognition of this stronger interaction energy enables the new local field picture to explain RTN naturally. The success of the new model, and the resulting drastic change in the understanding of both capture and emission, suggested that many long-held ideas would have to be thoroughly reconsidered. "It's a very scary and very unsetting conclusion,I mean,this is tear-up-the textbook stuff." Campbell said. As an end, NIST researchers hope the new model will help chip engineers and designers understand in much greater detail how devices degrade and hat will be required to get to the next stage of miniaturization while maintaining reliability and reducing noise.