dram Related Articles

Dynamic random-access memory (DRAM) modules form the backbone of modern computing. You rely on DRAM modules for quick access to data in computers, smartphones, and industrial systems. These modules store information temporarily, enabling devices to process tasks at lightning speeds.The DRAM modules component market is poised for sustained growth, driven by the escalating demand for high-performance computing applications.By 2025, advancements in DRAM modules technology promise to reshape industries. The adoption of DDR5 and DDR6 memory, with faster speeds and lower power consumption, will improve performance across artificial intelligence, machine learning, and cloud computing. Smartphones will benefit the most, as DRAM modules drive their ability to handle advanced features and multitasking.Understanding DRAM ModulesWhat is dynamic random access memory?Dynamic random-access memory (DRAM) is a type of semiconductor memory that temporarily stores data for quick access by your computer's processor. Unlike storage devices like hard drives or SSDs, DRAM allows random access to any part of its memory, enabling faster data retrieval. This makes it an essential component in modern computing systems, from personal computers to smartphones and servers.Each DRAM cell consists of a capacitor and a transistor, organized in a grid. The capacitor holds the data as an electrical charge, while the transistor acts as a switch to control access to the data. However, the stored charge leaks over time, requiring the memory to refresh itself every few milliseconds to maintain data integrity. This refresh process is what gives DRAM its "dynamic" nature.?? Did you know? DRAM is the primary type of memory used in main memory for computers and graphics cards due to its high density and low cost.Key components and functionality of DRAM modulesDRAM modules are made up of several key components that work together to deliver high-speed performance. These include:Memory cells: Each cell contains a capacitor and a transistor, which store and manage data.Row and column decoders: These help locate specific memory cells for reading or writing data.Control circuitry: This manages the flow of data between the processor and the memory module.Data bus: This transfers data between the DRAM module and the processor.The functionality of DRAM lies in its ability to provide temporary storage for data that your processor needs to access quickly. For example, when you open a web browser, the DRAM temporarily stores the browser's data so your computer can access it faster than if it were stored on the hard drive. However, because DRAM is volatile, all data is lost when the system powers off.ComponentDRAMSRAMStructureOne transistor and a capacitorFour to six transistorsDensityHigh densityLower densityCostLower cost per bitHigher costRefresh RequirementRequires periodic refreshingNo refresh neededPower ConsumptionHigher due to refreshingLowerHow DRAM differs from other memory typesDRAM stands out from other types of memory, such as static random-access memory (SRAM) and read-only memory (ROM), in several ways. Unlike SRAM, which uses multiple transistors per cell and does not require refreshing, DRAM is more compact and cost-effective. This makes it ideal for applications requiring large amounts of memory, such as main memory in computers.Another key difference lies in its volatility. DRAM loses all stored data when the power is turned off, whereas ROM retains data permanently. Additionally, DRAM modules, such as DIMMs (Dual Inline Memory Modules), are designed for high-speed data transfer, making them suitable for tasks like gaming, video editing, and running complex simulations.Characteristic/TypeDescriptionDefinitionDRAM is a type of semiconductor memory used for data or program code needed by a computer processor.FunctionalityAllows random access to any part of memory directly, enabling faster data access than storage media.Storage Cell StructureConsists of a capacitor and a transistor, organized in a two-dimensional grid.Refresh RequirementNeeds to be refreshed every few milliseconds to maintain data integrity.Types of DRAM1. Synchronous DRAM (SDRAM) - syncs with CPU clock speeds.2. Rambus DRAM - used in early 2000s for graphics cards.3. Double Data Rate SDRAM (DDR SDRAM) - doubles bandwidth by transferring data on both clock edges.4. Fast Page Mode DRAM - focuses on fast page access for higher performance.5. Extended Data Out DRAM - improves read times on microprocessors.Packaging Types1. Single Inline Memory Module (SIMM) - considered obsolete.2. Dual Inline Memory Module (DIMM) - commonly used with more pins and higher data transfer rates.DIMM Types1. Unbuffered DIMMs - faster but less stable.2. Registered DIMMs - more stable, used in servers.3. Fully Buffered DIMMs - improve reliability and error detection.By understanding these differences, you can appreciate why DRAM remains the preferred choice for high-performance computing tasks. Its balance of speed, cost, and density makes it indispensable in modern technology.The Evolution of Dynamic Random-Access MemoryImage Source: pexelsMilestones in DRAM technology developmentThe journey of dynamic random access memory began in 1966 when Robert Dennard invented DRAM at IBM. This innovation redefined memory storage by using a single transistor per cell. In 1968, Dennard and IBM received the patent for this groundbreaking technology. By 1970, Intel introduced the first 1-kilobit DRAM chip, which marked the beginning of its widespread adoption.Here are some key milestones in DRAM's history:1966: DRAM invention revolutionized memory storage efficiency.1970: Intel's 1103 chip became the first commercially successful DRAM product.1976: Steve Wozniak used DRAM in the Apple I, paving the way for personal computing.1984: The Apple II, equipped with DRAM, sold over 2 million units.2023: Micron unveiled a 128GB DDR5 RDIMM module with speeds up to 8000 MT/s.These milestones highlight DRAM's role in shaping modern computing.Transition to modern high-performance DRAM modulesThe evolution of DRAM has led to the development of high-performance modules like DDR5 and HBM3E. These modules offer faster speeds, higher capacities, and lower power consumption. For instance, Samsung's 8-layer HBM3E chips passed Nvidia's AI processor tests in 2024, showcasing their suitability for advanced applications. Similarly, SK Hynix began mass production of 12-layer HBM3E chips, further pushing the boundaries of DRAM technology.Modern DRAM modules are also tested using advanced tools like SoftMC and DRAM Bender. These tools measure response times and analyze interactions between memory types, ensuring optimal performance for tasks like AI and big data processing.Contributions of DRAM to technological progressDRAM has been a cornerstone of technological advancements. Its ability to provide high-speed, temporary storage has enabled breakthroughs in computing, gaming, and artificial intelligence. For example, DRAM's integration into data centers has improved cloud computing efficiency. It has also powered innovations in industrial automation and IoT devices, making smart systems more responsive and reliable.As DRAM technology continues to evolve, it will play an even greater role in shaping the future of technology. From enabling real-time AI processing to supporting next-generation computing systems, DRAM remains indispensable.Types of DRAM Modules and Their ApplicationsOverview of DDR, LPDDR, and GDDR modulesWhen exploring the common types of DRAM, you’ll encounter DDR, LPDDR, and GDDR modules. Each serves a unique purpose, tailored to specific applications and performance needs.Memory TypeDevelopment PathKey FeaturesApplication ScenarioDDREvolved slowly, focusing on core frequency improvementsHigher performance, traditional desktop/server useGeneral computing, serversLPDDRDeveloped alongside DDR but diverged post-LPDDR4Enhanced prefetching, low power consumptionMobile devices, smartphonesGDDRDeveloped independently from DDR3/4High data bus width, optimized for graphicsGraphics cards, gaming consolesDDR (Double Data Rate) SDRAM is the most widely used type of DRAM in computers and servers. It offers high performance and reliability, making it ideal for general computing tasks. LPDDR (Low Power Double Data Rate) is a variation designed for mobile devices. It consumes less power, which extends battery life in smartphones and tablets. GDDR (Graphics Double Data Rate) is optimized for graphics-intensive tasks. You’ll find it in gaming consoles and high-performance graphics cards, where speed and bandwidth are critical.Applications in computing systems like PCs and serversDRAM modules play a vital role in computing systems, especially in PCs and servers. They act as the main memory, enabling your computer to handle multiple tasks simultaneously. For instance, when you open several browser tabs or run a video editing program, DRAM ensures smooth performance by temporarily storing the data your processor needs.In high-performance computing (HPC) and embedded systems, three key metrics determine DRAM performance: bandwidth, latency, and capacity. Bandwidth ensures that data flows efficiently, which is crucial for memory-bound tasks like running databases or virtual machines. Latency affects how quickly your system can access data, influencing responsiveness. Capacity determines how much data your system can handle, which is essential for demanding applications like AI training or scientific simulations.MetricDescriptionBandwidthDirectly correlates with performance in server environments, especially for applications like SAP HANA or Redis.LatencyInfluences system responsiveness and computational throughput across diverse workloads.CapacityImportant for high-performance computing, ensuring sufficient memory for demanding applications.Servers often use specialized DRAM modules like Registered DIMMs (RDIMMs) or Fully Buffered DIMMs (FB-DIMMs). These modules enhance stability and error correction, which are critical for enterprise-level workloads. Whether you’re running a personal computer or managing a data center, DRAM ensures your system operates efficiently.Use in industrial systems, IoT, and embedded devicesIndustrial applications demand robust and reliable memory solutions. DRAM modules, particularly industrial memory modules, are designed to withstand harsh environments and deliver consistent performance. You’ll find these modules in industrial automation systems, where they power real-time data processing for tasks like robotics and machine control.In IoT devices, DRAM supports the rapid exchange of data between sensors and processors. For example, smart home devices rely on DRAM to process voice commands and communicate with other devices. Embedded systems, such as those in automotive applications, also benefit from DRAM’s speed and efficiency. These systems use industrial RAM to handle tasks like navigation, infotainment, and advanced driver-assistance systems (ADAS).Industrial RAM is built to endure extreme temperatures, vibrations, and power fluctuations. This makes it ideal for use in factories, transportation systems, and other demanding environments. By integrating DRAM into these systems, you can ensure reliable performance and seamless operation in modern applications.The Role of DRAM in Modern TechnologyImportance in high-performance computing and data centersDRAM plays a critical role in high-performance computing (HPC) and data centers. These systems demand exceptional speed and efficiency to process complex applications. DRAM modules meet these demands by providing high bandwidth and low latency, ensuring smooth data flow and quick access to information. For example, supercomputers like the Tianhe-2 rely on large DRAM configurations to achieve unparalleled performance. HPC systems can deliver up to one million times the performance of traditional servers by aggregating computing power through clusters of high-speed computers.You’ll find DRAM essential in applications with high latency demands, such as weather predictions and financial trading. Its ability to handle massive workloads while maintaining efficiency makes it indispensable. Additionally, DRAM helps reduce operational costs by improving application performance and processing data faster. This efficiency also minimizes heat generation, which is crucial for data centers that require advanced cooling solutions.DRAM's role in cloud computing and AI applicationsCloud computing and AI applications depend heavily on DRAM for their functionality. In cloud environments, DRAM ensures rapid data retrieval, enabling seamless user experiences. For instance, when you stream a video or access a cloud-based document, DRAM temporarily stores the data, allowing quick access without delays.AI applications, such as machine learning models, require vast amounts of memory to process and analyze data in real time. DRAM modules, especially DDR5 and HBM3E, provide the speed and capacity needed for these tasks. They support the training of AI models by handling large datasets efficiently. This capability accelerates innovation in fields like autonomous vehicles, natural language processing, and predictive analytics.Applications in industrial automation and smart systemsIn industrial automation, DRAM ensures high reliability and efficiency. Industrial-grade DDR5 6400 DRAM modules, for example, offer data transfer rates of 6400MT/s, significantly outperforming DDR4. These modules are ideal for mission-critical tasks in industrial settings, such as robotics, machine control, and edge computing. Their built-in error correction (ECC) ensures data integrity, even in harsh environments.Smart systems, including healthcare devices and IoT applications, also benefit from DRAM. In smart healthcare, DRAM supports real-time data processing for patient monitoring and diagnostics. IoT devices, like smart thermostats and security cameras, rely on DRAM to process data from sensors and communicate with other devices. With features like anti-sulfur technology and wide-temperature specifications, industrial DRAM modules deliver consistent performance in challenging conditions.?? Note: DRAM’s versatility and resilience make it a cornerstone of modern technology, from industrial automation to AI-driven innovations.Future Trends in DRAM TechnologyImage Source: pexelsInnovations in DRAM design and performanceThe future of DRAM technology is shaped by groundbreaking innovations aimed at improving speed, efficiency, and capacity. Manufacturers are transitioning to larger wafer sizes, such as 12-inch wafers, to enhance production efficiency and reduce costs. High-Bandwidth Memory (HBM) is also gaining traction, driven by its ability to handle the demanding workloads of AI and data centers. Advanced nodes like 1α and 1β are being adopted to achieve higher density and lower power consumption.You’ll notice significant advancements in DRAM modules like DDR5 and GDDR7. DDR5 offers higher data transfer rates and increased memory bus width, making it ideal for high-performance computing. Meanwhile, GDDR7 introduces dynamic voltage adjustments and advanced thermal management, ensuring optimal performance in energy-intensive environments like gaming and data centers. These innovations are setting new benchmarks for data throughput and energy efficiency.Trend/ForecastDescriptionLarger Wafer SizesTransition to 12-inch wafers enhances efficiency and reduces costs.High-Bandwidth Memory DemandIncreased demand for HBM driven by AI applications and data centers.Technological AdvancementsAdoption of advanced nodes (1α, 1β) leads to higher density and lower power consumption.Supply Chain RisksGeopolitical uncertainties may impact supply chain stability and pricing dynamics.Impact on AI, machine learning, and big data processingDRAM plays a pivotal role in AI, machine learning (ML), and big data processing. These technologies require vast amounts of memory to store datasets and model parameters. DRAM ensures high-speed access to this data, directly influencing the performance and reliability of AI applications. For example, Samsung’s LPDDR5X DRAM achieves speeds of 10.7 Gbps, improving efficiency by over 25% compared to earlier generations.The global machine learning market reached $31 billion in 2024, highlighting the growing demand for faster memory solutions. DRAM modules like HBM3E are designed to meet these needs, offering the speed and capacity required for training complex AI models. Whether it’s autonomous vehicles or predictive analytics, DRAM enables real-time data processing, making these innovations possible.AspectDetailsImpact of DRAM on AI/MLDRAM is essential for storing large datasets and model parameters in AI applications.Market GrowthThe global ML market size reached USD 31.0 Billion in 2024.Industry AdoptionAI and ML technologies are increasing the demand for DRAM in sectors like automotive and cloud computing.Predictions for DRAM's role in technology by 2025By 2025, DRAM will continue to drive technological advancements across industries. The DRAM market is projected to reach $15.41 billion, growing at a compound annual growth rate (CAGR) of 7.2%. High-Bandwidth Memory is expected to grow by 70% year-over-year, reflecting its critical role in AI and data center applications.You can expect DRAM to play a central role in emerging technologies like edge computing and 5G networks. Its ability to deliver high-speed data throughput will support real-time processing in smart cities, autonomous systems, and industrial automation. As manufacturers prioritize innovations in DRAM design, the technology will remain a cornerstone of modern computing.YearMarket Value (USD)CAGR (%)202515.41 billion7.2203223.39 billion?? Note: The rapid evolution of DRAM technology ensures its relevance in shaping the future of AI, big data, and next-generation computing systems.DRAM modules play a vital role in modern computing and industrial systems. Their ability to deliver high-speed data access ensures smooth performance for tasks like AI processing and real-time analytics. For example, industrial DDR5 5600 modules achieve speeds of 5600 MT/s and capacities up to 48GB, making them over 50% faster than DDR4. These advancements improve efficiency while maintaining reliability through features like on-die ECC. As technology evolves, DRAM innovations will continue to shape industries, enabling breakthroughs in AI, automation, and next-generation computing systems. You can expect DRAM to remain a cornerstone of technological progress by 2025.FAQWhat makes DRAM different from other types of memory?DRAM stores data temporarily and requires constant refreshing to retain information. Unlike ROM, which keeps data permanently, DRAM loses all data when powered off. Its high speed and cost-effectiveness make it ideal for tasks requiring quick access to large amounts of data.How does DRAM impact gaming performance?DRAM improves gaming by enabling faster data retrieval and smoother multitasking. High-capacity DRAM modules reduce lag during gameplay and support advanced graphics rendering. For example, GDDR modules in graphics cards optimize frame rates and enhance visual quality.Can DRAM be used in extreme environments?Yes, industrial-grade DRAM modules are designed for harsh conditions. They feature wide-temperature specifications and anti-sulfur technology, ensuring reliable performance in extreme temperatures, vibrations, and power fluctuations. These modules are ideal for factories, transportation systems, and outdoor IoT devices.What is the future of DRAM technology?DRAM will evolve with innovations like DDR6 and HBM advancements. These technologies will offer faster speeds, higher capacities, and lower power consumption. By 2025, DRAM will play a key role in AI, edge computing, and 5G networks, driving real-time data processing and next-generation applications.How does DRAM benefit AI applications?DRAM provides the speed and capacity needed for AI tasks like training machine learning models. Modules like HBM3E handle large datasets efficiently, enabling real-time data analysis. This supports innovations in autonomous vehicles, predictive analytics, and natural language processing.

Ⅰ IntroductionWith the improvement of computer technology, the demand for non-volatile memory is increasing, their read and write speed requirements are getting faster and faster, and the power consumption  are becoming smaller and smaller as required by users. But the traditional non-volatile memory such as EEPROM , FLASH, etc. have been difficult to meet these needs.Traditional mainstream semiconductor memories can be divided into two categories: volatile and nonvolatile. Volatile memory includes static random access memory (SRAM) and dynamic random access memory (DRAM). Both SRAM and DRAM lose their saved data when power off. Although RAM is easy to use and performs well, a big disadvantage of it is data loss.Non-volatile memory does not lose stored data in the case of a power failure, because all mainstream non-volatile memories are derived from read-only memory (ROM) technology. ROM, what is called a read-only memory is definitely not easy to write, in fact, it cannot be written at all. All memories developed by ROM technology are difficult to write data, including EPROM, EEPROM and Flash. And these memories not only have a slow writing speed, but also can only be erased and written in a limited number of times.Based on improving semiconductor technologies, ferroelectric memory, a new type of memories, has some unique characteristics. Ferroelectric memory is compatible with all the functions of RAM, and it is a non-volatile memory like a ROM. In other words, ferroelectric memory bridges the gap between these two types of storage, a type of non-volatile RAM. Compared with traditional non-volatile memory, it has attracted much attention due to its advantages such as low power consumption, fast read and write speed, and strong anti-irradiation capability. CatalogⅠ IntroductionⅡ TerminologyⅢ Working PrincipleⅣ FRAM Material FeaturesⅤ Circuit StructureⅥ Reading and Writing ProcessⅦ FRAM StructureⅧ Comparison of FRAM with Other Storage TechnologiesⅨ FRAM UsageⅩ SummaryⅪ One Question Related to FRAM and Going Further11.1 Question11.2 AnswerⅡ TerminologyFerroelectric Memory (FeRAM)Ferroelectric memory (FRAM), also known as F-RAM or FeRAM, is a type of random access memory with fast read and write speed, and the ability to retain data after power is turned off (such as read-only memory and flash memory) is combined, which is the most commonly used type of personal computer memory. Since it is not as dense as dynamic random access memory (DRAM) and static random access memory (SRAM), that is, it cannot store as much data as they do in the same space. In other words, it cannot replace DRAM and SRAM technologies. However, because it can store data quickly with very low power conditions, it is widely used in consumer’s small devices, such as personal digital assistants (PDA), mobile phones, power meters, smart cards, and security systems. FRAM’s read and write speed is faster than flash memory. In some applications, it may also replace electrically erasable read-only memory (EEPROM) and static random access memory (SRAM), and will become a key component of future wireless products. Ⅲ Working PrincipleFeRAM or ferroelectric RAM seems to indicate that an iron element exists within the memory this is not actually the case. A ferroelectric is a material containing a crystal that can spontaneously polarize. It has two states that can be reversed by an external electric field. When an electric field is applied to the ferroelectric crystal, the central atom moves in the crystal following the electric field direction. When an atom moving, it passes through an energy barrier, causing charge breakdown. Internal circuits react to the charge breakdown and set the memory. After the electric field is removed, the central atom remains polarization state, which makes the materials non-volatile, so the state of the memory is preserved. Because there is no atomic collision in the entire physical process, the ferroelectric memory has the characteristics of high read and write speed, ultra-low power consumption, and unlimited writes, making it very suitable to act as temporary storage memory in important systems to transfer various data between subsystems, for each subsystem to read and write frequently.Therefore, with an external electric field, the polarization characteristics of ferroelectric materials will change. When this electric field is removed, the data can still be saved. Without an external electric field, there are two stable states of polarization characteristics. Figure 1 is a hysteresis loop of a ferroelectric material capacitor, showing the different polarities of the ferroelectric capacitor under different applied electric fields. Among them, the two most important parameters are the degree of residual polarization Pr, and the coercive field Ec. In the absence of electric field effect, +/- Pr represents two states of “0” and “1”. To obtain these two states, the applied electric field must be greater than +/- Ec, at this time, the required threshold voltage is also determined.Figure 1. Ferroelectric Hysteresis LoopThe industry explores the use of ferroelectric materials for DRAM: using them as dielectric materials in DRAM capacitors. That is, ferroelectrics are used to replace high-K dielectric materials in standard logic devices, and finally non-volatile transistors are formed, which are FeFETs. The two stable polarization states of the ferroelectric gate oxide change the threshold voltage of the transistor, even when the supply voltage is removed. Therefore, the binary state is encoded in the threshold voltage of the transistor. The writing operation of the memory cell can be completed by applying a pulse on the gate of the transistor, which will change the polarization state of the ferroelectric material and affect the threshold voltage. For example, applying a positive pulse will reduce the threshold voltage, making the transistor in the “on” state. Reading is done by measuring the drain current. This memory mode is similar to the operating mode of a NAND flash: electrons are injected and drawn out of the floating gate, which adjusting the threshold voltage of the transistor.In contrast, the leakage current factor of ferroelectric capacitors is not as important as traditional non-volatile memories such as EEPROM and FLASH, because the information storage of FeRAM is realized by polarization, not free electrons. Ⅳ FRAM Material FeaturesIdeal ferroelectric materials need to meet the following characteristics:Small dielectric constantReasonable self-polarization degree (~ 5μC/ cm2)High Curie temperature (outside the storage and operating temperature range of the device)The thickness of ferroelectric materials should be thin (submicron) to make the coercive field EC smaller. Ferroelectric materials should stand a certain breakdown filed strength.Internal switching speed should be fast (nanosecond level)The ability to keep the data and the long-lasting ability will be good.If used by the military, it is also required to be able to resist radiation exposure. Good chemical stabilityGood processing uniformityEasy to integrate into CMOS processNo bad effect on the surrounding circuitsSmall pollution After years of research and development, there are currently two main types of mainstream ferroelectric materials: PZT and SBT.PZT is lead zirconate titanate PbZrxTil-xO3; SBT is strontium bismuth tantalate Sr1-yBi2 + xTa2O9. The structure of these two materials is shown in Figure 2. Figure 2. Schematic Diagram of PZT and SBT Material StructurePZT is the most studied and widely used. Its advantage is that it can be made at lower temperatures by sputtering and MOCVD. It has the advantages of large residual polarization, cheap raw materials, and low crystallization temperature.; its disadvantages are fatigue degradation problems, and lead pollution to the environment. Moreover, the film deposition process of these materials has proved to be very challenging. At the same time, the extremely high dielectric constant (about 300) of these materials is a big obstacle to their integration into transistors.In addition, scientists have discovered the presence of a ferroelectric phase in a less complex material, hafnium oxide (HfO2), which raise a new concept of storage concept. The researchers found that the ferroelectric phase) can be stabilized by doping silicon (Si) into HfO2. Compared with PZT, HfO2 has a lower dielectric constant and can deposit thin films in a conformal manner (ie, the atomic layer deposition (ALD) process). Most importantly, scientists are familiar with HfO2, because it is the HK gate oxide material in the logic device HKMG. By modifying this CMOS-compatible material, logic transistors can become non-volatile FeFET memory transistors.Functional verification of FeFETs has been implemented in a two-dimensional planar architecture. At the same time, the HfO2 conformal deposition process makes 3D stacking possible, for example, depositing ferroelectric materials on vertical “walls’ to stack transistors in a vertical direction.In terms of materials, 3D FeFETs can solve some of the challenges brought by 2D FeFET structures. One challenge is related to the polycrystalline nature of the HfO2. Scaling the thickness of the HfO2 film will significantly reduce the number of grains in this layer. Because not all the crystal grains have the same polarization direction, the reduction of crystal grains will affect the consistency of the transistor’s response to the external electric field, and eventually lead to large differences between the tubes. By 3D stacking, this drawback is overcome in physical filed. That is, HfO2 does not need to be compressed too thinly, thereby reducing tube-to-tube variation.These vertical FeFETs are expected to have more advantages than complex 3D NAND flash memory, including simple process, lower power consumption and faster speed. Compared to 3D NAND flash memory, vertical FeFET can be programmed at a lower voltage, which improves memory reliability and scalability.The biggest advantage of SBT is that it does not have the problem of fatigue degradation, and it does not contain lead, which meets EU environmental standards; however, its disadvantages are that the process temperature is higher, which makes the process integration difficult, and the degree of residual polarization is small. The comparison of the two materials is shown in Table 1.Table 1. Comparison between PZT and SBT  PZTSBTStructureABO3Layered structureDeposition technologySol-gel,MOCVDSol-gel,MOCVDProcess temperature450℃~700℃750℃~850℃Residual polarity3012Fatigue10101010Data hold85℃@10a- At present, from the perspective of environmental protection, PZT has been banned, but from the perspective of performance and process integration of ferroelectric memory and cost, SBT has no advantages compared to PZT. Therefore, the selection of ferroelectric materials is worth discussing. Ⅴ Circuit StructureThe circuit structure of the ferroelectric memory is mainly divided into the following three types: 2 transistors-2 capacitors (2T2C), 1 transistor-2 capacitors (1T2C), 1 transistor-1 capacitor (1T1C), as shown in Figure 3. The 2T2C structure has two opposite capacitors for each bit as a reference to each other, so the reliability is better, but occupies too much space, which is not suitable for high-density applications. The transistor / single capacitor structure can be used like a DRAM to provide a reference for each column of the memory array, compared with the existing 2T2C structure, they effectively reduce the required space of the memory cell by half. This design greatly improves the efficiency of ferroelectric memory and reduces the production cost of ferroelectric memory products. The 1T1C structure has a higher integration density (8F2), but its reliability is poor. And the 1T2C structure is a compromise between these two structures. Figure 3. Three FRAM StructuresAt present, in order to obtain a high-density memory, 1T1C structure is mostly used (as shown in Figure 4). In addition, a chain structure is also adopted, thus Chain FeRAM is made. This structure is similar to the NAND structure. Through this method, a higher storage density than 1T1C can be obtained, but this method will also greatly increase the access time. Chain FeRAM (CFeRAM) structure is shown in Figure 5. Figure 4. 1T1C Layout Figure 5. Chain FeRAM (CFeRAM) Circuit StructureⅥ Reading and Writing ProcessAccording to the polarity of the electronic memory cell, a small charge amount is “0” and a large charge amount is “1”. This charge is converted into a reading voltage, which is “0” when it is less than the reference voltage and when it is greater than the reference voltage represents “1”. The stored information is read out as shown in Figure 6. Figure 6. Reading and Writing Process of FRAMDuring the reading process, the word line voltage is increased to turn on the MOS transistor, and then the drive line voltage is increased as VCC, so that different charges of the storage capacitor are distributed to the bit line parasitic capacitance, so different voltages appear on the BL to identify the data. During a writing process, the word line is raised to turn on the MOS transistor, and a pulse is applied to the drive line, so that different data on the bit line are stored in two different steady states of the ferroelectric capacitor.By adding a positive voltage or a negative voltage, these two voltages can make the capacitor into two different polarities. In this way, the information is written into the memory. Ⅶ FRAM StructureAt present, the most common device structures of ferroelectric memories are planar and stack structures. The difference between the two is the location of the dry ferroelectric capacitor and the way in which the capacitor is connected to the MOS tube. In the planar structure, the capacitor is placed above the field oxide, and the electrode of the capacitor is connected to the active area of the MOS tube through metal aluminum. The process is relatively simple, but the unit spacing is large. In the stack structure, the capacitor is placed in the source region, the lower electrode of the capacitor is connected to the source terminal of the MOS tube through a plug based on CMP process, which has a high integration density. In addition, the stack structure can adopt the method of making ferroelectric capacitors on metal wires, thereby reducing the mutual influence during the formation process. The following schematic diagrams of the two structures are shown in Figure 7 and Figure 8. Figure 7. Planar Structure Figure 8. Stack StructureThe process of the planar structure is relatively simple. The isolation uses the LOCOS structure, and the planarization does not require the CMP. The stacked structure has a high degree of integration based on advanced technique, and STI is used for isolation, in addition, CMP is required for planarization, and copper wires can be used.In addition, there is a structure that uses a ferroelectric material as the gate. Such a device can eliminate the destructive problem of data readout, and theoretically it is more space-saving and can make more greater integration. However, there are still serious problems with this structure, that is, the data storage capacity is very poor, only one month or less, so it is far from practical. Figure 9 is a schematic diagram of such a structure. Figure 9. FeFET Structure DiagramAt present, the ferroelectric memory generally adopts a planar structure with the line width more than 0.5 μm, and generally uses a stack structure when the line width is less than 0.5 μm. Ⅷ Comparison of FRAM with Other Storage TechnologiesAt present, Ramtron’s FRAM mainly includes two categories: serial FRAM and parallel FRAM. Among them, serial FRAM is divided into I2C two-line FM24×× series and SPI three-line FM25xx series. Serial FRAM is compatible with the traditional 24xx and 25xx E2PROM pins and timing, which can be directly replaced.FRAM products have the advantages of RAM and ROM, and fast read and write speed, in addition, they can be used as non-volatile memory. Due to the shortcoming of ferroelectric crystals, the number of accesses is limited, beyond which FRAM is no longer non-volatile. The maximum access times given is 10 billion, but it not means FRAM will be scrapped when over this upper limit. In the terms of it, FRAM is not non-volatile, but it can still be used as an ordinary RAM.FRAM vs E2PROMFRAM can be used as a second option for E2PROM. Except the performance of E2PROM, the FRAM access speed is much faster. When using FRAM, it must be determined that once there are 10 billion accesses is down to FRAM in the system, there is no damage.FRAM vs SRAMIn terms of speed, price, and convenience, SRAM is better than FRAM; but from the perspective of the entire design, FRAM has certain advantages. Non-volatile FRAM can hold startup programs and configuration information. If the maximum access speed of all the memories in the application is 70ns, one piece of FRAM can be used to complete the system, making the system structure more simpler.FRAM vs DRAMDRAM is suitable for applications where density and price are more important than access speed. For example, DRAM is the best choice for graphics display memory. There are a large number of pixels to be stored, and the recovery time is not very important. If you don’t need to save the last content at the next boot, use volatile DRAM memory. The role and cost of DRAM are reasonable compared with FRAM. In short, it turns out that DRAM cannot be replaced by FRAM totally.FRAM vs FlashAt present, the most commonly used program memory is Flash, which is more convenient and cheaper to use. The program memory must be non-volatile, and easier to rewrite, but the use of FRAM is limited by access times.Ⅸ FRAM UsageData collection and recordingFeRAM allows designers to write data faster and more frequently, and at a lower price than EEPROM.Typical applications: meters (electric meters, gas meters, water meters, flow meters), RF/ID instruments, car black boxes, air bags, GPS, power grid monitoring systems, and so on. Parameter setting and storageFeRAM helps designers solve the problem of data loss due to sudden power failure by storing data in real time. Parameter storage in the FeRAM is used to track the changes of the system in the past time. Its purpose includes restoring the system state or confirming a system error when the power is on.Typical applications: photocopiers, printers, industrial controls, set-top boxes, network equipment  and large household appliances. Non-volatile bufferFeRAM can quickly store data before it is stored in other memory, so that the data in the buffer will not be lost when having power failure.Typical applications: industrial systems, ATM teller machines, tax control machines, commercial settlement systems (POS), fax machines, non-volatile cache memory in hard disk, etc. Ⅹ SummaryFerroelectric memory is an emerging non-volatile memory. It started early and realized industrialization. Because of its advantages such as low power consumption, fast read and write speed, and strong anti-irradiation capabilities, there is a market for small-scale storage areas with low power consumption and radiation resistance. Having the characteristic of anti-radiation, in the case of electromagnetic waves or radiation, the data is still safe, so it has important applications in space science, medicine and other specific fields. However, the ferroelectric memory also has the disadvantages that it is difficult to improve the integration, the process is more contaminated, and it is difficult to be compatible with the CMOS technique. So that it needs further research and solution. Ⅺ One Question Related to FRAM and Going Further11.1 QuestionWhat is FRAM used for?11.2 AnswerFerroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. It is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FRAM can be used in many fields, for example, with ultra-low power consumption, it is very suitable for intelligent water meters, gas meters and so on. Frequently Asked Questions about Ferroelectric RAM1. What is FRAM memory?Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. 2. What is ferroelectric effect?Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. ... Thus, the prefix ferro, meaning iron, was used to describe the property despite the fact that most ferroelectric materials do not contain iron. 3. How does FRAM work?FRAM is a nonvolatile storage memory that retains its data even after the power is turned off. However, similar to commonly used DRAM (Dynamic Random Access Memory) found in personal computers, workstations, and non-handheld game-consoles, FRAM requires a memory restore after each read. 4. What are the unique characteristics of FRAM?FRAM has the characteristics of both ROM (Read Only Memory) and RAM (Random Access Memory), and features faster write, great read/write cycle endurance, and low power consumption. 5. Which enables the read and write operation in Feram?Write Operation in Ferroelectric Random Access Memory (FRAM)Similar to read operation, a pre-charge operation follows a write access. The circuit applies 'write' data to the Ferroelectric capacitors. If necessary, the new data simply switches the state of the ferroelectric crystals.

  Solid-state drive or Solid-state disk, abbreviated as SSD, is a computer storage device made of integrated circuits. You can use non-volatile memory (mainly NAND Flash in flash memory) as a permanent storage device, or use volatile memory (such as DRAM) as a temporary storage device. Solid-state hard drives often use SATA, PCI Express, mSATA, M.2, ZIF, IDE, U.2, CF, CFast... and other interfaces. At present, due to the difference between the price per unit and the maximum storage capacity of the mechanical hard disk, the solid state hard disk cannot completely replace the mechanical hard disk for the time being.   How do SSDs Work? | How does your Smartphone store data?  Catalog I What is Solid State Drive? II SSD Classification 2.1 Solid State Drive based on FLASH   Memory 2.2 Solid State Drive based on DRAM III Development History IV SSD Basic Structure 4.1 Main Control Chip 4.2 Cache Chip 4.3 Flash Memory Chip V Compare with Traditional Hard Disk VI SSD Advantages and Disadvantages 6.1 SSD Advantages 6.2 SSD Disadvantages FAQ I What is Solid State Drive?  Solid State Drive, also called solid state disk or SSD, is a hard disk made from an array of solid-state electronic memory chips, consisting of a control unit and a memory unit (FLASH chips / DRAM chips). The interface specification and definition, function and usage method of solid state disk are identical to those of ordinary hard disk drive, and the product shape and size are also the same as that of ordinary hard disk drive.  The working temperature range of SSD chip is very wide: Commercial product: 0~70℃; Industrial product: -40~85℃. Although the cost of manufacturing an SSD is high, it is still gradually being popularized into the DIY market. Due to the difference between solid state drive technology and traditional hard disk drive technology, there are many new memory manufacturers. Manufacturers only need to buy NAND memory, and then they can manufacture solid state disk with proper control chip. The new generation solid state drive generally uses SATA-2 interface, SATA-3 interface, SAS interface, MSATA interface, PCI-E interface, NGFF interface, CFast interface and SFF-8639 interface. II SSD Classification There are two kinds of storage media in solid state drive, one is FLASH chip and the other is DRAM. 2.1 Solid State Drive based on FLASH Memory Solid state drive based on FLASH memory(IDE FLASH DISK, Serial ATA Flash Disk) is using FLASH chips as its storage media. Its appearance can be made into a variety of forms, such as: Laptop hard drive, Micro hard disk, memory card, USB flash disk and etc. The biggest advantage of this SSD is that it is movable, and the data protection is not controlled by power supply. Also, it can be applied to various environments, but its service life is not too long, so it is suitable for individual users. In a flash-based solid state drive, memory cells are divided into two categories: SLC (Single Layer Cell) and MLC (Multi-level Cell).  Solid state drive based on FLASH memory The characteristics of SLC is its high cost, small volume and high speed. And for MLC, it is with characteristics of large volume, low cost but low speed. Each unit of MLC is 2bit, which is exactly twice as many as SLC. However, due to the large amount of data stored in each MLC storage cell and the relative complexity of the structure, the probability of error will increase, so the error correction must be carried out. This action will cause its performance to lag significantly behind the SLC flash memory with simple structure. In addition, the advantage of flash memory is that the number of duplicates is up to 100000 times, which is 10 times higher than that of MLC flash memory. In order to ensure the lifetime of MLC, the control chip is calibrated and the intelligent wear balance algorithm is used, so that the write times of each memory cell can be divided equally, and the mean time between failures (MTBF) can reach 1 million hours.   2.2 Solid State Drive based on DRAM Solid state drive based on DRAM is using DRAM as the storage medium. However, its application range is currently narrow. It follows the design of traditional hard disk, which can be volume setup and managed by most file system tools of operating system, and provides industrial standard PCI and FC interfaces for connecting hosts or servers. The application can be divided into two kinds: SSD hard disk and SSD hard disk array. It is a kind of high performance memory and has a long service life. The downside of it is its need for independent power supply to protect the data security. Solid state drive based on DRAM III Development History > 1956: IBM invented the world's first hard disk. > 1968: IBM restates the feasibility of Winchester technology, which established the development direction of hard disk. > 1970: StorageTek developed the first solid state hard drive. > 1989: The world's first solid state hard disk occurred. > 2006.03: Samsung took the lead in launching a solid state hard disk laptop with 32GB capacity > 2007.01: SanDisk released an 1.8-inch solid state hard disk with 32GB and 2.5-inch model with 32GB in March. > 2007.06: Toshiba has launched its first solid-state hard disk laptop with 120GB capacity. Intel SSD 520 Series > 2008. 09: The official launch of MemoRight SSD marks the accelerated entry of Chinese enterprises into solid state hard disk industry.  > 2009: With the development of SSD , all the manufacturers crushed into this industry , and the storage virtualization then entered a new stage . > 2010.2: Magnesia released the world's first solid-state disk with SATA 6Gbps interface, which breaking through the speed of SATAII interface reading and writing(300MB/s). > The end of 2010: Renice launched and patented the world's first high-performance mSATA solid state disk. > 2012: Apple uses 512GB solid state hard drives on its laptops. > 2015.08.01: TEKISM introduced the first mobile solid-state hard disk with Type-C interface. The SSD provides the latest Type-C interface and supports double-sided insertion of the USB interface. > 2016.01.01: Chinese storage company TEKISM has released the world's first Type-C fingerprint encrypted SSD. SSD M300   IV SSD Basic Structure The FLASH based SSD is the main category of solid state drives. Its internal structure is very simple. The main body of the solid state hard disk is actually a PCB board, and the most basic accessory on this PCB board is the control chip, cache chip(some low-end disks have no caching chip) and NAND flash that used for data storage. The more common solid state hard drives on the market are: LSISandForce, Indilinx, JMicron, Marvell, Phison, Goldendisk and Samsung. The main control chip is the brain of solid state hard drive. One of its functions is to reasonably allocate the load of data on each flash memory chip, and the other is to transfer the whole data and connect the flash memory chip with the external SATA interface. The ability of different master control is very different in data processing ability, algorithm, flash chip reading and writing control , which will directly lead to a ten times gap of solid state hard disk performance. Different SSD 4.1 Main Control Chip Table 1. Brand, model and product of the main control chip for solid state drive 4.2 Cache Chip   The cache chip is next to the main control chip. Solid state drive and traditional hard disk both require high speed cache chip to assist the main control chip for data processing. It is important to be noted here that there are some cheap solid state drive solutions to save the cost of the cache chip, which will have a certain impact on the performance in use.   4.3 Flash Memory Chip Apart from main control chip and caching chip, chips on the other place on PCB board are mainly NAND Flash chips. NAND Flash memory chips are divided into SLC, MLC and TLC NAND Flash memory.    V Compare with Traditional Hard Disk The interface specification and definition, function and usage method of solid state drives are almost the same as those of ordinary hard disk, and the shape and size of solid state drives are basically the same as that of ordinary 2.5 inch hard disk. Solid state drive has the advantages of fast reading and writing, light mass, low power consumption and small volume, which is not possessed by traditional mechanical hard disk. At the same time, its disadvantage is obvious. Although IDC believes that SSD is in the mainstream of the storage market, its price is still relatively high and its capacity is relatively low, once the hardware is damaged, the data is difficult to recover, and others think that the durability of solid state drives is relatively short. The main factors that influence the performance of solid state drive are main control chip, NAND flash media and firmware. Under the same conditions, what kind of interface is adopted may also affect the performance of SSD. The mainstream interface is SATA (including two kinds of interfaces for 3Gb/s and 6Gb/s) and the SSD of the PCIe 3.0 interface. Duo to the difference of the design and the principle of data reading and writing between SSD and the common disk, the internal structure of SSD is also very different. In general, the structure of solid state disk (SSD) is relatively simple and can be disassembled; therefore, most of the articles we see about SSD performance evaluation include an internal disassembly diagram of SSD. On the other hand, the data reading and writing of the ordinary mechanical disk is to lift the magnetic head by the air produced by the high speed rotation of the disc, which makes the magnetic head infinitely close to the disk without contact, and the stepper motor is used to push the head to read the data of changing the track. Therefore, its internal structure is relatively complex, more sophisticated, which is generally not allowed to disassemble. Once human disassembly, there is a strong risk of damage on the disk and disk can not work properly.This is why disassembly diagrams are largely invisible when evaluating ordinary disks.   VI SSD Advantages and Disadvantages 6.1 SSD Advantages   6.1.1 Fast reading and writing Using flash memory as storage medium, the read speed of SSD is faster than mechanical hard disk. SSD does not use (magnetic) head, and its seek time is almost 0. The speed of continuous writing is amazing, and most SSD manufacturers will claim that their solid state drives continue to read and write faster than 500MB / s! The speed of solid state hard disk is not only reflected in continuous reading and writing, but also in random reading and writing speed, which is directly reflected in most of the daily operation. Associated with this are extremely low access times, with the most common 7200 rotary mechanical drives running at 12-14 milliseconds, while solid state drives can easily reach 0.1 milliseconds or less.    6.1.2 Shock resistance Traditional hard drives are disk-type, data is stored in the disk sector. The solid state drive is made from flash memory particles (mp3, U disk, etc.), so there are no mechanical components inside the SSD. This will not affect its normal use even when moving at high speed or even with tilting, and minimize the possibility of data loss in the event of collisions and oscillations. Compared with the traditional hard disk, solid state drive has an absolute advantage.   6.1.3 Low power consumption  The power consumption of solid state drive is lower than that of traditional hard disk.   6.1.4 Noiseless Solid state drive has no mechanical motors and fans inside, thus it works with a noise value of 0 dB.Flash based solid state drives have lower energy consumption and lower calorific emissions (but the consumption of high-end or large-capacity products will be larger). There are no mechanical parts inside, so there will be no mechanical failure, no collision, no shock or vibration. Because the solid state hard disk uses the flash memory chip without mechanical parts, it has the characteristics of low heat emission and fast heat dissipation.   6.1.5 Wide range of working temperature A typical hard disk drive can only work in the range of 5 to 55℃ and most solid state drives can work at -10~70℃. The solid state hard disk is smaller in size and lighter in weight than the mechanical disk of the same capacity. The interface specification and definition, function and usage method of solid state drives are the same as those of ordinary hard disk, and the product shape and size are the same as that of ordinary hard disk. The working temperature range of the chip is very wide(-40~85 ℃).   6.1.6 Lightweight Solid state drives are lighter in weight, 20-30 grams lighter than regular 1.8-inch hard disks.   6.2 SSD Disadvantages  6.2.1 Capacity The maximum capacity of solid state drive is only 4TB. It is SanDisk Optimus MAX   6.2.2 Limited Service Life Solid state drive flash memory has the problem of limitation of erasing times.  A flash memory is completely erased once called a P / E, so the life of flash memory takes P/E units. The lifetime of the 34nm flash chip is about 5000 P / E, while the lifetime of the 25nm is about 3000 P / E. With the improvement of SSD firmware algorithm, the new SSD can provide less unnecessary writing. An 120GB solid state drive that writes 120GB of files to one P / E. In practical use, individual users often write in random rather than continuously. So there will be higher probability of bad sectors. In addition, while each sector of the solid state drive can be repeatedly erased 100000 times(SLC), in some applications such as LOG records in operating system , A sector may be read and written over and over again, in which case the actual lifetime of a solid state disk is not yet tested. However, with the equalization algorithm, the life expectancy of the memory unit is increased by 100000 writes, and the low cost MLCs have only 10, 000 write lives, while the cheap TLC flash memory is only 500 to 1, 000 times.   6.2.3 Expensive The price of the 128GB solid state drive on the market is around RMB550, while the price of the 256GB is around RMB950 .   FAQ   1. Is SSD better than HDD? SSDs in general are more reliable than HDDs, which again is a function of having no moving parts. ... SSDs commonly use less power and result in longer battery life because data access is much faster and the device is idle more often. With their spinning disks, HDDs require more power when they start up than SSDs.   2. What is a solid state drive used for? A solid-state drive (SSD) is a solid-state storage device that uses integrated circuit assemblies to store data persistently, typically using flash memory, and functioning as secondary storage in the hierarchy of computer storage.   3. Is a 256GB SSD better than a 1TB hard drive? A 1TB hard drive stores eight times as much as a 128GB SSD, and four times as much as a 256GB SSD. The bigger question is how much you really need. In fact, other developments have helped to compensate for the lower capacities of SSDs.   4. Do I need HDD if I have SSD? You don't need both but having a SSD for your operating system and a HDD for your storage drive might be the best bang for your buck. Otherwise, you only need one; a HDD is cheaper, larger, slower, and more prone to data loss. A SSD are normally smaller in storage for the same price but faster and shock resistant.   5. Should I upgrade to SSD? It's time to upgrade to an SSD if you're still using a mechanical hard drive in your computer. ... Solid-state drives are so much faster because they don't have a spinning magnetic platter and moving head. After upgrading, you'll be amazed at the performance improvements and wondering why you waited so long.   6. What are the pros and cons of a solid state drive? a. SSD is faster. b. SSD can take a licking c. HDD is cheaper; SSD is still expensive. d. HDD has greater storage capacity than SSD   7. Do solid state drives crash? SSDs can fail, but in a different way than traditional HDDs. While the latter often fail because of mechanical issues, SSDs may fail due to the methods used to write information. ... Each P/E cycle gradually degrades the memory of an SSD's cells until they eventually become worn down.   8. Can I put SSD and HDD together? The answer is absolutely yes. You can install both, but, SSD will have faster SSD speeds and HDD will still have slower HDD speeds. It is an excellent idea to use SSD and HDD at the same time. An SSD boasts many distinctive merits such as fast loading speed, low power consumption, and etc.     9. How much faster is a SSD than a HDD? As noted above,solid-state drives can read/write speeds of around 550 MB/s faster than a hard disk drive. SSDs can go even faster, provided your computer can handle it. A PCIe SSD can achieve anywhere from 1.2 GB/s to 2.2 GB/s - assuming you have a motherboard that can handle these speeds.   10. How can I tell if my SSD is failing? So here are four signs of SSD failure: Sign #1: Your computer takes a long time to save files. Sign #2: You have to restart often. Sign #3: Your computer crashes during boot. Sign #4: You receive a read-only error.

Samsung Electronics announced today that it has begun mass producing the industry's first 10-nanometer (nm) class, 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. DDR4 is quickly becoming the most widely produced memory for personal computers and IT networks in the world, and Samsung's latest advancement will help to accelerate the industry-wide shift to advanced DDR4 products.Samsung opened the door to 10nm-class DRAM for the first time in the industry after overcoming technical challenges in DRAM scaling. These challenges were mastered using currently available ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment.Samsung's roll-out of the 10nm-class (1x) DRAM marks yet another milestone for the company after it first mass produced 20-nanometer (nm) 4Gb DDR3 DRAM in 2014."Samsung's 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry," said Young-Hyun Jun, President of Memory Business, Samsung Electronics. "In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users."Samsung's leading-edge 10nm-class 8Gb DDR4 DRAM significantly improves the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.The new DRAM supports a data transfer rate of 3,200 megabits per second (Mbps), which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.The industry-first 10nm-class DRAM is the result of Samsung's advanced memory design and manufacturing technology integration. To achieve an extremely high level of DRAM scalability, Samsung has taken its technological innovation one step further than what was used for 20nm DRAM. Key technology developments include improvements in proprietary cell design technology, QPT (quadruple patterning technology) lithography, and ultra-thin dielectric layer deposition.Unlike NAND flash memory, in which a single cell consists of only a transistor, each DRAM cell requires a capacitor and a transistor that are linked together, usually with the capacitor being placed on top of the area where the transistor rests. In the case of the new 10nm-class DRAM, another level of difficulty is added because they have to stack very narrow cylinder-shaped capacitors that store large electric charges, on top of a few dozen nanometer-wide transistors, creating more than eight billion cells.Samsung successfully created the new 10nm-class cell structure by utilizing a proprietary circuit design technology and quadruple patterning lithography. Through quadruple patterning, which enables use of existing photolithography equipment, Samsung also built the core technological foundation for the development of the next-generation 10nm-class DRAM (1y).In addition, the use of a refined dielectric layer deposition technology enabled further performance improvements in the new 10nm-class DRAM. Samsung engineers applied ultra-thin dielectric layers with unprecedented uniformity to a thickness of a mere single-digit angstrom (one 10 billionth of a meter) on cell capacitors, resulting in sufficient capacitance for higher cell performance.Based on its advancements with the new 10nm-class DDR4 DRAM, Samsung expects to also introduce a 10nm-class mobile DRAM solution with high density and speed later this year, which will further solidify its leadership in the ultra-HD smartphone market.While introducing a wide array of 10nm-class DDR4 modules with capacities ranging from 4GB for notebook PCs to 128GB for enterprise servers, Samsung will be extending its 20nm DRAM line-up with its new 10nm-class DRAM portfolio throughout the year. Explore futher: Samsung’s Galaxy S7 -- A Tale of Two Image Sensors