The Kynix Blog

Ⅰ IntroductionLithium batteries are a type of battery that uses lithium metal or lithium alloy as the cathode material and use a non-aqueous electrolyte solution. Lithium battery is an ambiguous term. In 1912, lithium metal batteries were first proposed and studied by Gilbert N. Lewis. In the 1970s, M. S. Whittingham proposed and began researching lithium-ion batteries. Due to the very active chemical properties of lithium metal, the processing, storage, and use of lithium metal require very high environmental requirements. With the development of science and technology, lithium batteries (broadly speaking) have now become mainstream. CatalogⅠ IntroductionⅡ HistoryⅢ Li & Li-ion Battery Features3.1 Advantages3.2 DisadvantagesⅣ Lithium Battery VS Lithium Ion Battery4.1 Lithium Batteries4.2 Li-ion BatteryⅤ ApplicationⅥ Battery Security6.1 Battery Storage6.2 Charging Rules6.3 Battery ExplosionⅦ Development ProspectsⅧ One Question Related to lithium metal & lithium ion Battery and Going Further8.1 Question8.2 AnswerⅡ HistoryIn the 1970s, M.S. Whittingham used titanium sulfide as the positive electrode material and metallic lithium as the negative electrode material to make the first lithium battery.In 1980, J. Goodenough discovered that lithium cobaltate could be used as a cathode material for lithium-ion batteries.In 1982, R.R.Agarwal and J.R.Selman of the Illinois Institute of Technology discovered that lithium ions can be embedded into the graphite, which is fast and reversible. At that time, lithium batteries made of metal lithium have attracted much attention because of their safety issues. Therefore, people tried to embed lithium ions to graphite to make rechargeable batteries. Finally, first available lithium-ion graphite electrode was successfully trial-produced by Bell Labs.In 1983, M. Thackeray, J. Goodenough, and others found that manganese spinel is an excellent cathode material, which has good properties of low cost, stability, and excellent electrical and lithium conduction. Its decomposition temperature is high, and its oxidizing property is far lower than that of lithium cobaltate. Even if having a short circuit or overcharge, combustion and explosion can be avoided as far as possible.In 1989, A. Manthiram and J. Goodenough discovered that a positive electrode using a polymeric anion would generate a higher voltage.In 1991 Sony released the first commercial Li-ion battery. Subsequently, lithium-ion batteries revolutionized the development of consumer electronics. For example, the weight and volume of portable electronic devices such as mobile phones, notebooks, and calculators has greatly reduced.In 1996, Padhi and Goodenough discovered that phosphates with an olivine structure, such as lithium iron phosphate (LiFePO4), are more superior than traditional cathode materials, and  become the mainstream cathode materials gradually.Lithium batteries were first used in pacemakers. Lithium batteries have the advantages of low self-discharge rate and gentle discharge voltage, so that the pacemaker implanted in the human body can operate for a long time without recharging. Lithium batteries generally have a nominal voltage higher than 3.0V, making them more suitable as integrated circuit power supplies.To develop a new better lithium battery, various materials have been researched and tested. Ⅲ Li & Li-ion Battery Features3.1 Advantages1) High energy density. With high storage power density, it has reached 460-600Wh / kg, which is about 6-7 times that of lead-acid batteries. It is one of the major advantages of lithium ion battery technology. For example, high energy-dense 18650 cells can deliver over 3,000mAh and the costs have dropped further today.2) Long cycle life, the service life can reach more than 6 years. For example, the battery 1C (100% DOD) with lithium ferrous phosphate as the positive electrode is charged and discharged about 10,000 times.3) High rated voltage, a single battery working voltage is 3.7V or 3.2V, which is approximately equal to the series voltage of 3 Ni-Cad or Ni-MH rechargeable batteries, in addition, it is convenient to form a battery power pack. What’s more, lithium batteries can use a new type of voltage regulation technology to adjust the voltage to 3.0V to suit the use of small appliances.4) High power resistance capacity. For example, phosphate lithium-ion battery for electric vehicles can reach 15-30C charge and discharge capacity, which is convenient for high-intensity startup acceleration.5) Low self-discharge rate. It is one of the most outstanding performances of the battery, which can generally be less than 1% per month, and it is much lower than that of other rechargeable cells such as Ni-Cad and NiMH batteries.6) Light weight, about 1 / 6 to 1 / 5 of lead acid products under the same volume.7) Good performance at high and low temperature. For example, the battery can be used in the environment of -20 ℃ ~ 60 ℃, after processing, it can be used in the environment of -45 ℃.8) Less harm to environment. Regardless of production, use and scrap, it does not contain or produce any toxic and harmful heavy metal substances, such as lead, mercury, cadmium.9) There are several types available. It means that the right technology can be used for the special application required. 3.2 Disadvantages1) Lithium primary batteries have poor safety and risk of explosion.2) Li-ion batteries (lithium cobaltate) cannot be discharged at high currents.3) Li-ion batteries need protecting circuit to prevent the battery from being overcharged and over discharged.4) Li-ion batteries will only last two or three years from the date of manufacture whether you use them or not.5) High production requirements and costs.6) Limited use conditions, because they are extremely sensitive to temperature.7) As for air transportation/travel, many airlines limit the number of lithium ion batteries they take.Ⅳ Lithium Battery VS Lithium Ion Battery4.1 Lithium Batteries4.1.1 ChemistriesLithium batteries are primary batteries that have metallic lithium as an anode, and metallic lithium or other alloy metals used as cathode, regarded PP or PE film as the the separator.Note: Discharge reaction: Li+MnO2=LiMnO2They have low self-discharge rate, annual self-discharge can be ≤1%. The service life of fully sealed (metal welded, lazer seal) batteries up to 10 years, and semi-sealed batteries are generally 5 years.Lithium metal is used as the negative electrode, and the positive electrode and the electrolyte are thionyl chloride (sulfoxide). Cylindrical batteries have electricity after assembly. The voltage is 3.6V, which is one of the most stable types of batteries. It is suitable for use on electronic instruments and equipment that cannot be maintained frequently, providing subtle current. 4.1.2 Battery StructureLithium batteries usually come in two shapes: cylindrical and square. The inside of the battery is a spiral winding structure, and a very fine and highly permeable polyethylene film separator is used to separate the positive and negative electrodes. The positive electrode contains a current collector composed of lithium cobaltate (or nickel-cobalt lithium manganate, lithium manganate, lithium ferrous phosphate, etc.) and the aluminum foil. The negative electrode consists of a current collector composed of graphitized carbon material and the copper foil. The battery is filled with an organic electrolyte solution. It is also equipped with a safety valve and a PTC element (partially cylindrical) to protect the battery from damage during abnormal conditions and output short circuits. 4.1.3 Battery Material AnodeThere are many choices of anode materials, for example, LiFePO4 is mostly used as mainstream products.  Chemistry ReactionThe lithium ion is embedded when discharge, and de-embedded in the charge.On Charge：LiFePO4 → Li1-xFePO4 + xLi+ + xe-On Discharge：Li1-xFePO4 + xLi+ + xe- → LiFePO4 CathodeGraphite is commonly used, and new research has found that titanate may be a better material. Chemistry ReactionThe lithium ion is de-embedded when discharge, and embedded in the charge.On Charge：xLi+ + xe- + 6C → LixC6On Discharge：LixC6→ xLi+ + xe- + 6C Conductive CoatingThe conductive coating is also called pre-coating. In industry, it usually refers to a layer of conductive coating applied to the surface of the positive electrode current collector-aluminum foil. The earliest experiments on aluminum foil in batteries can be traced back to the 1970s. With the development of new energy industry, especially the development of LiFePO4 batteries, it has become a hot new technology in the industry.The conductive coating can effectively improve the adhesion of the pole pieces in the lithium battery, reduce the amount of binder used, and also significantly improve the battery's electrical performance:1) Contact resistance decreases 40%2) Adhesive reduces 50%3) Battery voltage increases 20%at the same magnification.Material and current collector adhesion increases 30%, and no delamination after long-term cycling.In addition, carbon coated aluminum foil is another coating which made of conductive carbon-based composite paste and high-purity electronic aluminum foil by transfer coating process. 4.1.4 Shell CharacteristicsTo improve safety and voltage, scientists have invented materials such as graphite and lithium cobaltate to store lithium atoms. The molecular structure of these materials forms nano-scale small storage lattices that can be used to storage. In this way, even if the battery case is broken and oxygen enters, the oxygen molecules will be too large to enter these small storage cells, so that lithium atoms will not react with the oxygen to avoid explosion.  4.2 Li-ion Battery4.2.1 TerminologyLithium-ion battery is a type of batteries with non-aqueous electrolyte that uses lithium alloy metal oxides as anode material, graphite as cathode material.Li-ion batteries currently include liquid lithium-ion batteries (LIB) and polymer lithium-ion batteries (PLB). Among them, the liquid lithium ion battery refers to a secondary battery whose Li + is compound. The positive electrode uses lithium cobaltate and lithium manganate, and the negative electrode uses a lithium-carbon interlayer compound. Li-ion batteries have advantages of high operating voltage, small size, light weight, high energy, no memory effect, no pollution, small self-discharge, and long cycle life. Note:Reaction on anode: LiCoO2==Li(1-x)CoO2+XLi++Xe-(electron)Reaction on cathode: 6C+XLi++Xe- = LixC6Total reaction: LiCoO2+6C = Li(1-x)CoO2+LixC6Its practicality has greatly reduced the weight and volume of portable electronic devices such as mobile phones and notebook computers, and the using time is greatly extended. Because lithium-ion batteries do not contain heavy metal cadmium, compared with nickel-cadmium batteries, the environmental pollution is greatly reduced. 4.2.2 Li-ion Battery Characteristics High energy densityThe weight of a Li-ion battery is half that of a nickel-cadmium or nickel-hydrogen battery of the same capacity, and the volume is 20-30% of a nickel-cadmium battery and 35-50% of a nickel-hydrogen battery. High voltageThe operating voltage of a lithium-ion battery cell is 3.7V (average value), which is equivalent to three nickel-cadmium or nickel-metal hydride batteries connected in series. Small pollutionLi-ion batteries do not contain harmful metal substances such as cadmium, lead, and mercury. No lithium metalLi-ion batteries do not contain metallic lithium, so they are not subject to the ban imposed by airlines of carrying lithium batteries in passenger aircraft. Long cycle lifeUnder normal conditions, the charge-discharge cycle of a lithium-ion battery can exceed 500 times, and a iron phosphate battery can reach 2000 times. No memory effectThe memory effect refers to the phenomenon that the capacity of the battery decreases during the charge and discharge cycle of the nickel-cadmium battery. Lithium-ion batteries do not have this effect. Quick chargeUsing a constant current & voltage charger with a rated voltage of 4.2V, the lithium-ion battery can be fully charged in 1.5 ~ 2.5 hours; and the newly developed lithium iron phosphate battery can be fully charged in 35 minutes. 4.2.3 Matters of UseKeeping lithium-ion batteries regularly charged and discharged can extend battery life. Lithium-ion battery power is maintained at 10% ~ 90% is better for the battery. This means that you don't need to reach 100% when charging batteries for digital products such as mobile phones and laptops. Under normal circumstances, 50% of the power is best for lithium-ion battery storage.When digital products equipped with lithium-ion batteries are exposed to sunlight or stored in hot cars, it is best to turn these products off because lithium-ion batteries will age faster if the operating temperature exceeds 60℃. 4.2.4 Li-ion Battery SelectionLi-ion batteries are divided into liquid lithium-ion batteries and polymer lithium-ion batteries. The electrolyte of a lithium-ion battery is fluid, so it is more unstable than a lithium polymer battery, and it may explode if it is hit by an external force or if a non-compliant charger is used. And now that the popularization of portable electronic products such as smart phones, e-books, tablets, and laptops uses batteries as a power source, battery hidden troubles will break out at any time. To prevent these, we must pay attention to the following:1) The capacity is clearly marked. Batteries without a clearly marked capacity (such as 1000mAh) are likely to be inferior or recycled.2) Standby time. It is the continuous use time from the time the battery is loaded to the next charge.3) Safety protection circuit board. Without it, the lithium battery is at risk of deformation, leakage, and explosion.Lithium Ion Vs Lithium Polymer BatteriesⅤ ApplicationWith the development of microelectronic technology, more and more miniaturized devices have been put forward, which places high requirements on power sources. Lithium batteries have subsequently entered a large-scale practical stage.The earliest application was lithium sub primary battery, used in pacemakers. Due to the low self-discharge rate and gentle the discharge voltage, this makes it possible to implant the pacemaker into the human body for long-term use.Lithium manganese batteries generally have a nominal voltage higher than 3.0V, which is more suitable for integrated circuit power supplies and is widely used in computers, calculators, and watches.Li-ion batteries are widely used in mobile phones, notebook computers, power tools, electric vehicles, street light backup power supplies, navigation lights, and small household appliances, which can be said to be the most popular type.Ⅵ Battery Security6.1 Battery Storage6.1.1 Lithium BatteryPrimary lithium battery can be discharged continuously or intermittently. Once the power is exhausted, it can no longer be used, and it is widely used in electronic products with low power consumption such as cameras. It has a low self-discharge rate and can be stored for up to 3 years. In addition, it is good to store lithium primary batteries in low temperature to get better storage.Note: Lithium primary batteries are different from lithium ion batteries, the former cannot be charged. 6.1.2 Li-ion BatteryAlso called secondary lithium battery. It can be stored for more than half a year at 20°C. This is due to its low self-discharge rate and most of its capacity can be recovered.The self-discharge phenomenon e4xists in lithium batteries. If the battery is stored below 3.6V for a long time, it will cause the battery to over-discharge and damage the internal structure of the battery, reducing the battery service life. Therefore, long-term storage of lithium batteries should be recharged every 3 to 6 months, that is, keeping the battery voltage at 3.8 ~ 3.9V, and it is appropriate to maintain the discharge depth at 40% ~ 60%. The battery should be stored in a dry environment at 4 ℃ ~ 35 ℃ or in a moisture-proof packaging. In addition, Keep away from heat sources and sunlight.Storage requirements: In the environment with a temperature of 20 ± 5℃ and a humidity of no more than 50%, the air and water vapor must be prevented from contacting the aluminum foil during transportation. 6.2 Charging Rules Charging voltageGenerally, the battery voltage of a mobile phone is 3.7V, but the voltage of a general charger is 5V, but it will not affect the use. Shallow charge and dischargeThis is more beneficial for lithium batteries. Only when the power module of the product is calibrated for lithium batteries, it is necessary to deepen and deep charge. Therefore, lithium-ion-powered products do not have to be constrained by the process. Overcharge and overdischargeThe rated voltage of a lithium-ion battery is generally 3.7V. Depending on different materials, the positive electrode of lithium iron phosphate is 3.2V. The international standard for termination charge voltage when fully charged is 4.2V, and iron phosphate is 3.6V. Overdischarge or self-discharge reaction at low voltage will cause decomposition and destruction of lithium active material, and may not be recovered. And any kind of overcharging of lithium-ion battery will cause severe damage to the battery performance and even cause explosion. Therefore, the lithium-ion battery must avoid overcharging during the charging process.6.3 Battery Explosion6.3.1 Explosions ExpressThe type of battery cell explosion can be summarized into three types: external short circuit, internal short circuit, and overcharge. Here, the “external” refers to the outside of the battery cell and includes short circuits caused by poor internal insulation design of the battery pack. When a short circuit occurs outside the battery cell and the electronic component fails to cut off the circuit loop, high heat will be generated inside the battery cell, causing some of the electrolyte to vaporize, which will expand the battery case.When the internal temperature of the battery reaches 135 degrees Celsius, a good quality separator paper will close the pores, the electrochemical reaction will be terminated almost, the current will drop suddenly, and the temperature will decrease slowly, avoiding the explosion. However, if the pore closing rate is too poor, or the separator paper with poor quality, the battery temperature will continue to increase, causing more electrolyte vaporize, and finally the battery case will be broken, even be exploded.The internal short circuit is mainly caused by piercing diaphragm by the burrs of copper foil and aluminum foil piercing the diaphragm, or dendritic crystals of lithium atoms.These tiny needle-like metals can cause micro-short circuits. The copper and aluminum foil burrs are caused during the production process, and the observed phenomenon is that the battery leaks too quickly, and most of them can be detected by the cell plant or assembly plant. Moreover, because the burr is small, it is sometimes blown out, which makes the battery return to normal. Therefore, this kind of explosion is less happened. Therefore, the explosion caused by the internal short circuit is mainly caused by overcharge.After overcharging, needle-shaped lithium metal crystals are everywhere on the pole pieces, piercing points are everywhere to make micro short circuits. Therefore, the temperature of the battery will gradually increase, and finally the electrolyte is vaporized at high temperature. In this case, whether the temperature is too high to damage electrode materials and the battery housing burns and explodes, both situations will cause an explosion.Based on the above types of explosions, we can focus on batteries protection in three aspects: overcharge, external short circuits, and improvement of battery safety.When designing a battery system, two electronic protections must be provided for overcharge, overdischarge, and overcurrent. Final protection method, the safety level of batteries, which can be roughly differentiated according to the ability to withstand short circuit and overcharge. In addition, before the battery explodes, if lithium atoms accumulate on the surface of the battery, the explosion power will be greater. Comparing the performance of aluminum shell cells with steel shell cells, aluminum shells have high safety advantages. Moreover, consumers use inferior chargers. Thus the ability of cells to resist overcharge is more important than the ability to withstand external short circuits. 6.3.2 Explosion Causes1) Large internal polarization2) The pole piece absorbs water and reacts with the electrolyte.3) The quality and performance of the electrolyte.4) The amount of injection does not meet the process requirements.5) Poor sealing performance during laser welding in assembly process.6) Manufacturing dust is easy to cause micro short circuit.7) The positive and negative plates are thicker according to technological requirements, and it is difficult to insert the case.8) Sealing problem of liquid injection, for example, poor sealing of steel ball causes air drum.9) The shell is too thick, and the deformation of the shell will affect the thickness.10) High external ambient temperature. 6.3.3 Protection MeasuresTo avoid over-discharging or over-charging due to improper use, a triple protection mechanism is provided in the single-cell lithium-ion battery. The first is the use of switching elements. When the temperature in the battery rises, its resistance value rises, if the temperature is too high, the power supply will automatically stop. The second is to choose an appropriate separator material. When the temperature rises to a certain value, micron-sized micropores on the separator will automatically dissolve, so that lithium ions cannot pass through, and the internal reaction of the battery stops. The third is to set a safety valve (that is, the vent hole on the top of the battery). When the internal pressure of the battery rises to a certain value, the safety valve will automatically open to ensure the safety of battery.Sometimes, although the battery itself has safety control measures, due to some reasons, for example, security control fails, or the lack of a safety valve, or the gas is too slowly to release through the safety valve, therefore, the internal pressure of the battery will rise sharply and cause an explosion.In general, the total energy stored in a lithium-ion battery is inversely proportional to its safety. As the battery capacity increases, the battery volume also increases, its heat dissipation performance becomes poor, and the possibility of accidents will increase significantly. For Li-ion batteries for mobile phones, the basic requirement is that the probability of a safety accident is less than one in a million. For large-capacity lithium-ion batteries, especially electric vehicles, the use of forced heat dissipation is particularly important.Choose a safer electrode material, for example lithium manganate material, to ensure that the molecular structure is fully charged, the lithium ions of the positive electrode have been completely embedded in the carbon pores of the negative electrode to avoid the generation of dendrites is fundamentally. At the same time, the stable structure of lithium manganate makes its oxidation performance much lower than that of lithium cobaltate, and the decomposition temperature exceeds 100 °C of lithium cobaltate. The danger of burning and explosion caused by the precipitation of metallic lithium is avoided when having short circuit or overcharge.After the lithium battery cell is overcharged to a voltage higher than 4.2V, side effects will begin to occur. The higher the overcharge voltage, the higher the danger. Because the number of lithium atoms remaining in the positive electrode material is less than half, at this time, the storage cell collapses, causing the battery capacity to permanently decrease. If you continue to charge, since the storage cell of the negative electrode is already filled with lithium atoms, subsequent lithium metal will accumulate on the surface of the negative electrode material. These lithium atoms will grow dendritic crystals from the surface of the negative electrode toward the lithium ions. These lithium metal crystals will pass through the separator paper, making the positive and negative electrodes short-circuit. Sometimes the battery explodes before a short circuit occurs.When at a  overcharge process, materials such as the electrolyte will vaporize, which will cause the battery case or pressure valve to swell and rupture, allowing oxygen to enter and react with the lithium atoms accumulated on the negative electrode surface.Therefore, when charging a lithium battery, the upper limit of the voltage must be set to guarantee the battery life, capacity, and safety. The optimal charging voltage limit is 4.2V. There is also a lower voltage limit when the lithium battery is discharged. When the cell voltage is lower than 2.4V, some materials will start to be destroyed. In addition, when the lithium battery is discharged from 3.0V to 2.4V, the released energy accounts for only about 3% of the battery capacity. Therefore, 3.0V is an ideal discharge cutoff voltage. When charging and discharging, the limitation of current is also necessary. If the current is too large, lithium ions have no time to enter the storage cell, and will collect on the surface of the material, which will affect the battery performance.After these lithium ions have obtained electrons, lithium atom crystals will be generated on the surface of the material, which will cause danger, like overcharge. Therefore, the protection of lithium-ion batteries must include: the upper limit of the charging voltage, the lower limit of the discharge voltage, and the upper limit of the current. In general, except the lithium battery cell, there is a protective plate in the lithium battery pack.Ⅶ Development ProspectsTo develop more excellent batteries, various materials have been studied. For example, lithium sulfur dioxide batteries and lithium thionyl chloride batteries are very characteristic. Their positive electrode active materials are solvents for the electrolyte. This structure made only in non-aqueous electrochemical systems. Therefore, the research of lithium batteries has also promoted the development of electrochemical theory of non-aqueous systems. Except the use of various non-aqueous solvents, polymer thin film batteries has also been studied.Lithium batteries are widely used in energy storage systems such as hydropower, thermal power, wind power and solar power, telecommunications, electric vehicles, military equipment, aerospace and other fields.Lithium-ion batteries have been widely used in portable appliances such as laptop computers, video cameras, and mobile communications due to their unique performance advantages. With the shortage of energy and environmental protection, lithium battery is widely used in the electric vehicle industry, especially the emergence of lithium iron phosphate material batteries, which has promoted the development and application of the lithium battery industry. Ⅷ Questions Related to Lithium & Lithium-ion Batteries1. Is a lithium battery the same as a lithium ion battery?Lithium batteries feature primary cell construction. This means that they are single-use—or non-rechargeable. Ion batteries, on the other hand, feature secondary cell construction. This means that they can be recharged and used over and over again. 2. Do lithium-ion batteries need a special charger?Ultimately, using a battery charger with a specific Lithium charge algorithm is the best option for maximum performance and lifespan of any lithium battery. 3. Can you overcharge a lithium battery?In a lithium-ion battery, overcharging can create unstable conditions inside the battery, increase pressure, and cause thermal runaway. ... At best, this will lead to reduced capacity and shortened life cycle, and at worst this could cause thermal runaway. 4. Which is better lithium ion or lithium polymer battery?High powerBoth lithium-ion and lithium-poly batteries are suitable with high and robust power usages. However, lithium-ion batteries are more efficient and popular than lithium-polymer. They have higher energy levels and powers and are more suitable for heavy usages. 5. What is the difference between a lithium battery and a lithium-ion battery?Lithium batteries feature primary cell construction. This means that they are single-use—or non-rechargeable. Ion batteries, on the other hand, feature secondary cell construction. This means that they can be recharged and used over and over again.

Ⅰ IntroductionIn recent years, with the rapid development of the internet of things (IoT) and electronic technologies, embedded devices such as mobile phones, smartwatches, and sports bracelets have become important elements of cloud computing, IoT, and big data analytics. Embedded terminal devices become more usual in daily life. However, to meet the high storage requirements of these increasingly diverse applications, scientific research personnel face more challenges. Non-volatile memory is more and more popular in the market due to its advantages such as low energy consumption, non-volatile, high density, and low latency. The following is a basic introduction to new non-volatile memory with good future development prospects.The Future of Non-volatile MemoryCatalogⅠ IntroductionⅡ TerminologyⅢ Concept and ClassificationⅣ One Question Related to Non-volatile Memory and Going Further4.1 Question4.2 AnswerⅡ TerminologyMemory is an important part of computer systems. According to different positions in the storage system, memory can be simply divided into three types: on-chip memory, main memory, and hard disk. Correspondingly, static memory (SRAM), dynamic memory (DRAM), and magnetic disks have become the traditional technologies to realize these storage system. Over the past 40 years, these three technologies have achieved tremendous technical and commercial success. With the exception of magnetic disks, the manufacture of both static and dynamic memory relies on semiconductor integration technology. Although these two technologies are different, they also have a common characteristic: they both use the accumulation and release of charge on semiconductor devices to achieve data storage. For example, in a dynamic memory, the charge is used to represent a logic 1, and the discharge represents logic 0. In static memory, this process is achieved by charging and discharging the parasitic capacitance of the transistor. For example, solid-state storage, which widely used in flash memory, also stores data by capturing and releasing the charge on the floating gate of the transistor.With the improvement of manufacturing technologies, the size of semiconductor nano devices has continued to shrink, and the charges that can be stored on all of the above traditional memory devices has also decreased, which has brought serious reliability issues: First, more leakage current; second, a small perturbation of charges will have a relatively greater impact. In addition, the inherent limitations of the charge storage mechanism itself also can't be avoided, the processing of traditional mainstream memories at the nanoscale and the process disturbances are also very challenging.From the aspect of functions, static memory and dynamic memory both belong to the volatile memory category. Its characteristic is that when the power supply is off, the data stored in the memory will disappear and cannot be recovered. Especially in the design of dynamic memory, the charge on the capacitor will gradually leak out as the time increases. Therefore, the stored info need to be refreshed periodically. The static memory doesn't have this issue, but the area of the memory cell is usually large (about 20 times that of the dynamic memory cell), causing serious leakage current. Flash memory belongs to the non-volatile memory, and the data stored on it will be retained for a long time after the power off. In terms of performance, the first two types of memory read & write speed are on the level of nanoseconds, while the flash memory are on the level of hundreds of microseconds or even milliseconds. For the reading mode, the static memory and the dynamic memory can achieve random storage, for example, any one or several memory cells can be read and written at will. It different for Flash, although its storage density is high, the read operation must be performed in units of pages. Moreover, the content update of the flash memory cannot be achieved by directly overwriting the original content, but must be written to a new erased page. In addition, the maximum times of read and write supported by flash memory is extremely limited, typically between thousands of and millions of times. Ⅲ Concept and ClassificationConcept: Non-volatile memory refers to the computer memory of the person whose stored data will not disappear when the power is turned off. It is characterized by non-volatile, byte-by-byte access, high storage density, low energy consumption, and fast read and write speed, but the read speed  far faster than write, in other words, they are asymmetric in a limited life.Classification: According to whether the data in the memory can be rewritten at any time, the traditional non-volatile memory can be divided into two categories: read-only memory (ROM) and Flash memory. New type non-volatile memory compared with traditional non-volatile memory, its device has greatly improved energy consumption, read and write speed, integration density, etc. At present, the newly developed new non-volatile memory mainly includes four types: dielectric memory (FRAM), magnetic medium memory (MRAM), Ovonic phase change memory (OUM), and polymer memory (PFRAM).The following highlights four new non-volatile memories.The technical limitations of traditional memories and the huge challenges brought by the light weight have prompted researchers to look for a new generation of memory devices. People want to find a memory with the following characteristics:1) Nano level read and write speed of static memory2) Integrated density with dynamic memory and even flash memory level3) Flash-like non-volatile memory featuresAlthough such a storage technology has not been fully realized at present, some very promising new storage devices have been developed, and some have even entered the production stage. The four newly developed non-volatile memories are very promising for data processing, because of the limitations of traditional non-volatile memories, it is very likely to replace flash memory in the future.Table 1. New Non-volatile Memories Basic SituationsItemPerformanceManufactureLimitationApplicationFerroelectric RAM(FRAM)1) low energy consumption 2) high read & write speed3) long storage time4) low power operation5) anti-radiationsmaller size1) limit read & write times2) low storage density3) low reliability1) RF IC card2) fast-start memory3) embedded cache4) aerospaceMagnetic RAM(MRAM)1) high read & write speed 2) unlimited read & write times3) low power operationsimple circuithigh cost1) storage2) industrial automation, 3) games 4) energy management 5) communication 6) transportation7) aerospace electronics8) sensor terminalsPhase Change Memory (OUM) 1) long service life2) safety 3) low energy consumption1) small capacity2) low cost1) lower read &write speed2) poor temperature characteristic1) wired and wireless communications2) consumer electronics 3) PC and embedded devicesPolymeric RAM1) good stability 2) low power operation1) 3D stack2) easy processing3) low cost1) limit read & write times, 2) destructiveness1) PC 2) digital camera 3) mobile phoneFRAMa. IntoductionFRAM is the non-volatile memory technology in the new generation. In terms of performance, it consumes low energy and can store data for a long time although there is power failure. It combines the characteristics of high read-write speed of RAM and long-term data storage of ROM. Embedded FRAM in the non-volatile memory situation of radiation-resistant and low-power has great significance. It can be embedded in the chip in a more direct way and has better performance than any other alternative chips. In terms of manufacturing and technology, FRAM is easier to reduce size than flash memory due to the advanced nodes (65 nm or smaller), and does not require the use of very thin oxides or high voltages. b. LimitationWhen FRAM reaches a certain times of read and write, FRAM cells will lose their durability, and the FRAM yield problem caused by array size restrictions and further improvements in storage density and reliability still need to be resolved.c. ApplicationFRAM is a non-volatile memory that combines the advantages of low power consumption, high speed, long service life, and anti-radiation. It is promising in RF 1C card, fast startup memory, and system chip of cache and aerospace.d. Commercial progressFrom the point of international respect, well-known American company Ramtorn, which developed the first 4K bit commercial ferroelectric memory in 1993; after 1998, Ramtorn focused on product research and development, and handed over all production to semiconductor manufacturers. With the time goes by, Ramtorn represents the highest level of PZT-based commercial ferroelectric memory. Many other countries started late in the field of ferroelectric research and mainly based on scientific research. For example, the main work of some countries is still the preparation of ferroelectric thin films. MRAMa. MRAM BasicsMRAM is a non-volatile memory. For the performance, the write speed of MRAM is extremely fast, almost 1000 times that of flash memory, and 20 times that of FRAM. And it has unlimited read and write times, also it can switch on and off instantly and extend the battery life of portable computers. In terms of manufacturing and technology, the circuit of MRAM is simpler than ordinary memories, and only one readout circuit is needed for chip access. In addition, MRAM is easier to integrate (only 5 photomask layers are needed in the entire process), and there is no need to redesign at the transistor level of flash memory. All other core technologies used in the design can remain the same and work consistently.From 1986 to 1988, Albert Fert and Peter Grünberg discovered that nano-multilayer films composed of alternating ferromagnetic and non-magnetic metal layers made of molecular beam epitaxy have a much larger size than AMR, which is named as giant magnetoresistance (GMR). GMR is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers, but it was difficult to put into practice. Soon, further research by Parkin team found that the (ferromagnetic / non-magnetic metal / ferromagnetic) three-layer film made by sputtering technology has a much larger giant magnetic resistance at room temperature than a single-layer ferromagnetic metal. For the spin valve, opened the way for practical use of GMR.The discovery and research of GMR had led to the realization of high-sensitivity read heads in high-density disks, and promoted the development of the entire modern hard disk industry. The earliest application of spin valve sensors in hard disk read heads was in the IBM Deskstar 16GP Titan, which was released in 1997 and has a storage capacity of 16.8GB. In 2007, Hitachi introduced the Deskstar 7K1000, the first 1TB hard drive.b. MRAM LimitationMRAM is much higher than flash memory in the production costs.c. MRAM ApplicationWith the advantages of low power consumption, high-speed reading, high integration, radiation resistance and unlimited rewrites, MRAM is used in storage, industrial automation, gaming, energy management, communications, consumption electronic,transportation and avionics fields. In addition, the IOT and big data analytics are gradually emerging,ubiquitous sensor terminals need to collect massive amounts of data, in order to save storage power consumption, MRAM and STT-MRAM have become the better choices for their relatively good performance.d. MRAM Commercial ProgressIn 2006, Freescale launched the world’s first commercial MRAM product with a capacity of 4Mb. Judging from the current product specifications and development status, the use of MRAM is still limited to some specific markets. From the perspective of cost and capacity, it cannot compete with NAND flash memory with a maximum capacity of 8Gb and DRAM with 512Mb capacity. However, with Samsung, Intel, TSMC and Global Foundry and other integrated circuit leaders strengthening investment in R & D and related production lines, STT-MRAM is gradually begin mass production, partially replacing SRAM and DRAM products and becoming one of the mainstream memories. OUMa. OUM BasicPhase change memory is a kind of memory that realizes information storage through material phase change. It is the non-volatile and large-capacity storage technology advocated by Intel, the world's number one semiconductor chip manufacturer. In terms of performance, it has a long read and write operation life and is easier to integrate than flash memory. OUM memory cells are extremely dense, and read operations is more safer than other memories. Low energy consumption, requiring very low power to operate. In addition, OUM unit can write about 1 billion times, which makes it an ideal alternative to large-capacity memory in portable devices. From the aspect of manufacturing process, compared with the integration of existing logic circuits, its storage unit is only 1/3 of MRAM and FRAM, and its production cost is lower than other new memories.Crystalline Phase and Amorphous Phase ChangeAlthough phase change memory is often categorized as “new memory”, the concept of “phase change” has introduced over 50 years. In 1962, the phase transition of As-Te glass was discovered. In 1968, Stanford Robert Ovshinsky described in an article that certain semiconductor materials can rapidly switch between two different states of resistance and conductivity under the action of an electric field (on the order of 10μs), he utilized chain structures, cross links, polymeric concepts, and divalent structural bonding with a huge number of unbonded lone pairs to achieve what is now referred to as the “Ovshinsky Effect”, an effect that turns special types of glassy, thin films into semiconductors upon application of low voltage. This discovery directly led to a large number of subsequent studies on the phase transition of thin films based on tellurium-arsenide-germanium-silicon alloy materials or sulfur-based glasses. In 1970, Nevill and Gordon Moore demonstrated the world’s first 256-bit phase change memory, and Moore was later known for putting forward the famous “Moore's Law” about the number of transistors in a dense integrated circuit doubles about every two years and served as the co-founder of Fairchild Semiconductor and CEO of Intel. After that, research on semiconductor memories based on phase change materials has gradually slowed down due to issues such as materials and power consumption, but phase change materials have been used very successfully in rewritable optical discs such as CD-RW / DVD-RW.   b. OUM LimitationThe read and write speed and frequency of OUM are not as good as FRAM and MRAM, and how to maintain its driving temperature stably is also a big technical problem.c. OUM ApplicationPhase change memory is suitable for wired and wireless communication equipment, consumer electronics, PC and other embedded applications due to its fast read and write speed, strong upgrade capabilities, and low power consumption. For example, it is used in the aerospace embedded system and used in smart meters to further integrate its storage architecture.d. OUM Commercial ProgressPhase change memory, as one of the most promising new memories, can be embedded at all levels of the memory architecture. Because of the similarity between phase change memory and dynamic memory, especially its lower power consumption and scalability, it has been considered as the best substitute for dynamic memory. But phase change memory also has disadvantages. The first is its limited times of erases and writes (usually only 107 to 108). If the number of erasing and writing exceeds this limit, the life of the memory cell will end, and the device can no longer be used. The second disadvantage is the limited write speed. The write speed of phase change memory is 6-10 times slower than dynamic memory. Write Operation of Phase Change Memory UnitNevertheless, phase change memory still has good applications in some fields. Several related studies have proposed various methods to overcome these shortcomings. For example, an architecture adjustment is used to compensate for the loss caused by the performance of writing, which can greatly reduce power consumption, thereby accelerating the commercialization of phase change memory as the main memory of a computer.In addition, the multi-level cell technology has been successfully implemented on phase change memory. In the design of a multi-level cell phase change memory, 2N resistive states are used to represent N digits, respectively, in other words, in a 2-bit multi-level cell phase change memory, 00, 01, 10, and 11 can be represented by four different resistance values, respectively. In the specific design, the resistance of the phase change material can be changed by adjusting the amplitude and time of the writing current / voltage. PFRAMa. PFRAM BasicsPFRAM is a plastic, polymer-based, and non-volatile memory. In terms of performance, PFRAM has advantages such as good stability and low power consumption. From manufacturing process, high density can be obtained through three-dimensional stacking technology, which is easy to make and has extremely low manufacturing costs, only about 10% of NOR-type flash memory.b. PFRAM LimitationPFRAM has a limited read and write operation life and its reads are destructive.c. PFRAM ApplicationThe final product of (PFRAM will be an all-organic storage system, which will be suitable for personal computers, handheld computers, digital cameras, mobile phones, handheld radios and communication devices, GPS systems, audio, video, game background program and other important fields.d. PFRAM Commercial ProgressPFRAM develops slowly in commercial use, and Intel is in a leading position. In 2014, Intel recruited JonKrueger (architecture and software engineer) to work for its polymer memory group and greatly promote the development of multi-layer plastic memory, finally their work is close to the software development stage, which indicates that this memory technology will accelerate to the market.Memory technology will continue to improve to meet different applications. On the one hand, The new type memories will create a new market and enter various application markets, on the other hand, it involves new materials and research concepts, it will be difficult to become the mainstream of the market in a long time. However, in the aerospace, industrial automation,  embedded cache of system chip and other sub-application areas, the new non-volatile memory will gradually transfer its technological breakthroughs to market penetration and achieve rapid development.With the advent of the 5G era, the development of application markets such as the IOT, artificial intelligence, and smart cities, and the urgent need for diverse memory requirements, coupled with traditional memory market change, new type memories will play an increasingly important role in the market. Ⅳ Questions Related to Non-volatile Memory and Going Further 1. Which memory is called non-volatile memory?Examples of non-volatile memory include read-only memory (see ROM), flash memory, most types of magnetic computer storage devices (e.g. hard disks, floppy discs and magnetic tape), optical discs, and early computer storage methods such as paper tape and punched cards. 2. Which is non-volatile memory RAM or ROM?RAM, which stands for random access memory, and ROM, which stands for read-only memory, are both present in your computer. RAM is volatile memory that temporarily stores the files you are working on. ROM is non-volatile memory that permanently stores instructions for your computer. 3. What is another name for non-volatile memory?Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. 4. Which is the most non-volatile memory?NAND flash, the most common type used in data storage, includes several variants, such as single-level cells or one bit per multi-level cell or two bits per cell; three-level cells or three bits per cell and quad-level cells or four bits per cell, respectively. 5. What is non-volatile memory explain with example?NV or non-volatile memory is a term used to describe memory or storage that is saved regardless if the computer has power. ... An example of non-volatile memory and storage is a computer hard drive, flash memory, and ROM.

Ⅰ. Filter DefinitionIn electronics, a filter (signal processing) is a kind of devices or process that removes some unwanted components or features from a signal. Filtering is a class of signal processing, the defining feature of filters being the complete or partial suppression of some aspect of the signal. Most often, this means removing some frequencies or frequency bands. However, filters do not exclusively act in the frequency domain; especially in the field of image processing many other targets for filtering exist. As is known to all, electronic filters remove unwanted frequency components from the applied signal, enhance wanted ones, or both.Introduction to Signal FilteringCatalogⅠ. Filter DefinitionⅡ. Type of Filters and Functions  2.1 Type of Filters  2.2 Filtering FunctionsⅢ. Filter TechnologiesⅣ. Main Characteristic Indexes of FilteringⅤ. Filter Classifications Analysis  5.1 Passive Filter & Active Filter  5.2 Digital Filter & Analog FiltersⅥ. One Question Related Filter and Going Further  6.1 Question  6.2 AnswerⅡ. Type of Filters and Functions2.1 Type of FiltersFilters have different effects on signals of different frequencies. According to this fact, the basic filter types can be classified into four categories: low-pass, high-pass, band-pass, and band-stop. Each of them has a specific application in DSP. One of the objectives may involve digital filters design in applications. Generally, the filter is designed based on the specifications primarily for the passband, stopband, and transition band of the filter frequency response. The filter passband is the frequency range with the amplitude gain of the filter response being approximately unity. The filter stopband refers to the frequency range over which the filter magnitude response is attenuated to eliminate the input signal whose frequency components are within that range. The transition band means the frequency range between the passband and the stopband.Figure 1. Filtering Out the Noise (signal processing)Because there are many different standards of classifying filters and these overlap in many different ways, there is no clearly distinctive classification. Filters may be:non-linear or linearanalog or digitaltime-variant or time-invariant , also known as shift invariance.discrete-time (sampled) or continuous-timepassive or active type of continuous-time filterinfinite impulse response (IIR) or finite impulse response (FIR) type2.2 Filtering FunctionsSeparate useful signals from noise to improve signal immunity and signal-to-noise ratio.Filter out unwanted frequency to improve signal analysis accuracy.Separate single frequency from complex frequencFigure 2. Electronic FilterⅢ. Filter TechnologiesFilters can be built in a number of different technologies. Before that, it is necessary to know some basics of it deeply.Center frequencyThe main parameters of the filter: the center frequency of the filter's pass-band f 0, generally f 0 = (f 1 + f 2) / 2, f 1 and f 2 are boundary frequencies of band-pass or band-stop filter, which decreased by 1dB or 3dB. In addition, narrowband filters often use the smallest point of insertion loss as the center frequency to calculate the pass-band bandwidth. Cutoff frequencyIt refers to the right frequency point of the pass-band of the low-pass filter and the left frequency point of the pass-band of the high-pass filter, and it is usually defined by relative loss points, 1dB or 3dB. The relative reference for the relative loss is: the low-pass is based on the insertion loss at DC, and the high-pass is based on the insertion loss at a high-pass frequency at which no parasitic stop-band occurs. Pass-band bandwidthThe bandwidth of the filter is simply the difference between the upper and lower cutoff frequencies, while passband bandwidth is the difference between the upper and lower cutoff frequencies of, for example, a band-pass filter, a communication channel, or a signal spectrum. Insertion lossIt refers to the loss of the original signal in the circuit due to the introduction of the filter. And it is characterized by the loss at the center or the cutoff frequency. If it is the full-band interpolation loss, it must be emphasized.Note: When adding a filter at the input end, the impedance of the filter should be mismatched with the impedance of the power supply. The more severe the mismatch, the more ideal the attenuation is, and the better the insertion loss characteristics. That is, if the internal resistance of the noise source is low impedance, the input impedance of the EMI filter connected to it should be high (such as a series inductor with a large amount of inductance); if the internal resistance of the noise source is high impedance, the input impedance of the EMI filter should be low (such as a large parallel capacitor). Due to the imbalance of the line impedance, the two components will convert to each other during transmission, and the situation becomes complicated. RippleIt refers to the peak-to-peak value of the insertion loss that fluctuates on the basis of the average loss curve with the frequency in the 1dB or 3dB bandwidth (cutoff frequency). Pass-band riplpeThe amount of change in insertion loss in the pass-band with frequency. For example, in a 1dB bandwidth, it is 1dB. Pass-band standing wave ratio (VSWR)An important indicator for measuring whether the signal in the filter pass-band is properly transferred. Ideal VSWR is 1: 1, when mismatched, VSWR> 1. For an actual filter, bandwidth satisfies VSWR <1.5: 1, which is generally less than 3dB, and the proportion when at 3dB is related to the filter order and insertion loss. Return lossThe decibels (dB) of the ratio of the port's signal input power to the reflected power, and it is also equal to | 20Log10ρ |, where ρ is the voltage reflection coefficient. In addition, when the input power is completely absorbed by the port, the return loss value is infinite. Stop band rejectionIt is a major index to measure the performance of filter selection. The higher the index, the better the suppression of out-of-band interference signals. There are usually two formulations: one is how much dB is required to suppress a given out-of-band frequency fs, and the calculation method is the attenuation fs=As-IL; another is to propose a characterizing filter whose amplitude-frequency response is close to the ideal rectangle index of degree-rectangular coefficient (KxdB> 1), KxdB = BWxdB / BW3dB, (x can be 40dB, 30dB, 20dB, etc.). The more the filter order, the higher the rectangularity, in other words, the closer the K is to the ideal value 1, the more difficult it is to make an ideal filter. Delay (Td)It refers to the time required for the signal to cross the filter. The value is the derivative of the diagonal frequency of the transmission phase function. In-band phase linearityThis indicator characterizes the phase distortion introduced by the filter on the transmission signal in the pass-band. The filter designed according to the linear phase response function, which has good phase linearity, but its frequency selectivity is very poor. It is only used to pulse or phase-modulate signal transmission system applications. Order (stage)For high-pass and low-pass filters, the order is the sum of all capacitors and inductors in the filter circuit. For a band-pass filter, the order is the total number of parallel resonators; for a band-stop filter, the order is the total number of series and parallel resonators. Absolute bandwidth / relative bandwidthThis indicator is usually used for band-pass filters, which characterize the frequency range of signals that can pass through the filter, and reflects the frequency selection of the filter. Relative bandwidth is the percentage of absolute bandwidth to center frequency. Standing waveIt indicates the impedance matching between the filter port and the required system, and also it indicates how much of the input signal failed to enter the filter and was reflected back to the input. LossIt represents the energy lost after the signal passes through the filter, that is, the energy consumed by the filter. Pass-band flatnessThe absolute value of the difference between the maximum loss and the minimum loss in the pass-band of the filter, which characterizes the difference in energy consumption of filters for different frequency signals. Out-of-band rejectionIt is the "attenuation" outside the pass-band frequency range of the filter, which characterizes the filter's ability to select unnecessary frequency signals. Absolute group delayThe time it taken for a signal to pass from the input port to the output port within the pass-band of the filter. Group delay fluctuationThe difference between the maximum and minimum absolute group delay in the pass-band of the filter, which characterizes the dispersion characteristics of a filter. Power capacityIt refers to the maximum power of the pass-band signal that can be input to the filter. Phase consistencyThe difference in the phase of the transmitted signal between different filters of the same index in the same batch, which characterizes the differences (consistency) between batch filters. Amplitude consistencyThe difference of transmission signal loss between different filters with the same index in the same batch, which represents the differences (consistency) between batch filters.Figure 3. Low-Pass Electrical FilterⅣ. Main Characteristic Indexes of FilteringCharacteristic frequency① The pass-band cutoff frequency fp = wp / (2p) is the frequency of the boundary point between the passband and the transition band, at which the signal gain decreases to the specified lower limit.② Stop-band cut-off frequency fr = wr / (2p) is the frequency of the boundary point between the stopband and the transition band, at which the signal attenuation (reciprocal of the gain) decreases to the specified lower limit.③ The corner frequency fc = wc / (2p) is the frequency when the signal power is attenuated to 1/2 (about 3dB). In many cases, fc is often used as the pass-band or stop-band cutoff frequency.④ Natural frequency f0 = w0 / (2p), when there is no loss in the circuit, it refers to the resonance frequency of the filter, and complex circuits often have multiple natural frequencies. Gain and attenuationThe gain of the filter in the pass-band is not constant.① For the low-pass filter pass-band gain Kp, for the ordinary filters, it refers to the gain at w = 0; for the high-pass, it refers to the gain at w → ∞; for the band pass, it refers to the gain at the center frequency.② For the band-stop filter, the stop-band attenuation should be given, and the attenuation is defined as the inverse of the gain.③ The change amount of the pass-band gain △ Kp, refers to the maximum change amount of the gain at each point in the pass-band. If △ Kp is in dB, it means the variation of the gain dB value. Damping coefficient and quality factorThe damping coefficient is a characterization of a filter’s damping effect on a signal with an angular frequency at w0, and is an indicator of energy loss in the filter.The reciprocal of the damping coefficient is called quality factor, and is an important indicator of the frequency selection characteristics of the valence band-pass and band-stop filters, Q = w0 / △ w, where △ w in the formula is the 3dB bandwidth of the band-pass or band-stop filter, w0 is the center frequency, and in many cases the center frequency is equal to the natural frequency. SensitivityThe filtering circuit is composed of many components, and changes of parameter values of each component will affect the performance of the filter. The sensitivity of a certain performance index y of the filter to the change of a certain component parameter x is recorded as Sxy, which is defined as: Sxy = (dy / y) / (dx / x).This sensitivity is not the same concept with the sensitivity of measuring instruments or circuit systems. The smaller the sensitivity, the stronger the fault tolerance of the circuit, and the higher the stability. Group delay functionWhen the filter's amplitude-frequency characteristics meet the design requirements, in order to ensure that the output signal distortion does not exceed the allowable range, certain requirements should be put forward for its phase-frequency characteristic ∮(w). In filter design, the closer the group delay function d∮ (w) / dw is to a constant, the smaller the signal phase distortion. Ⅴ. Filter Classifications Analysis5.1 Passive Filter & Active FilterPassive filterA passive filter is composed of passive components only. It is based on the principle that the reactance of the capacitive and inductive components changes with frequency. The advantages of this type of filter are: simple circuit, causal power supply, and high reliability. Also there are disadvantages: the signal in the pass-band has energy loss, the load effect is relatively obvious, and electromagnetic induction is easy to cause when using inductive components. When the inductance is large, the size and weight of the filter are relatively large, which is not applicable in the low frequency range.The passive filter circuit has a simple structure and is easy to design, but its pass-band magnification and cut-off frequency change with the load, so it is not suitable for occasions with large signal processing requirements. Passive filter circuits are usually used in power circuits, such as filtering after DC power rectification, or LC (inductance, capacitor) circuit filtering when high current loads are used. Active filterActive filters are composed of passive components and active devices. The advantages of this type of filter are that the signal in the pass-band has no energy loss, even be amplified; the load effect is not obvious, and the mutual influence is small when multi-levels are connected. The simple method of cascading is easy to form high-order filter, and the device is small, lightweight, and does not require magnetic shielding. Their disadvantages are that the pass-band range is limited by the bandwidth of the active device and requires a DC power supply; the reliability is not as high as that of a passive filter, and it is not suitable for high voltage, high frequency, and high power applications.The load of the active filter circuit does not affect the filtering characteristics, so it is often used in places with superior signal processing requirements. Active filter circuit is generally composed of an RC network and integrated operational amplifier, so it can only be used under the condition of suitable DC power supply, and it can also be amplified. However, the composition and design of the circuit are also more complicated. Active filter circuits are not suitable for high voltage and high current applications. 5.2 Digital Filter & Analog Filters5.2.1 TerminologyA digital filter is an algorithm or device consisting of a digital multiplier, an adder, and a delay unit. The function of the digital filter is to perform arithmetic processing on the digital code of the input discrete signal to achieve the purpose of changing the signal spectrum. Digital filters can be made by computer software or large-scale integrated digital hardware.There are active and passive analog filters. Active filters mainly consist of op amps, op amps,  resistors, and capacitors. They have problems such as voltage drift, temperature drift, and noise, while digital filters do not get these problems, so they can achieve high stability and accuracy. 5.2.2 Differences between Digital filter & Analog filtersDigital filters are used for discrete systems, analog filters are used in continuous-time systems, and they can also be used in discrete-time systems, such as SC (switched capacitor) filters.From the point of view of implementation, analog filters are generally built with analog devices such as capacitors and inductors. Digital filters can be implemented by software or digital chips. It is troublesome to replace the capacitor and inductor when the technique parameters of the analog filter are changed. If there is a need for replacement, it is necessary to modify the coefficients (such as when implemented in software).From the technical view, for example, it is very difficult for analog filters to reach -60dB, and digital filters can easily reach this.The biggest difference between analog and digital filters is that the digital filter on the Fs/2 frequency is flipped, that is, symmetrical, while analog filters are not. Therefore, a large number of interpolation filters are selected in the DAC, and the image frequency is placed at a far frequency point, and then the analog filter regarded as a sound meter is used to filter out the image frequency in the radio frequency band.The expression of analog filters is different from digital filters: analog filters are represented by H (S), and digital filters are represented by H (Z). Analog filter is based on the approximation of amplitude-frequency characteristics, while digital filters can achieve phase matching.Figure 4. EMI Filters ImageⅥ. One Question Related to Filter and Going Further6.1 QuestionHow to Select EMI Filters?6.2 AnswerSome people think that the higher the insertion loss of an EMI filter, the better, and the more stages of the filtering network, the better. In fact, this is not the right way to choose a EMI filter. In addition, the more stages of the filtering network, the more expensive, the larger the size and weight. In practice, the best way to select and evaluate an EMI filter is to install it on a device for testing. As is known to all, the performance of a filter depends largely on the load impedance of the device. It cannot be derived from one data of impedance insertion loss. Because it is a complex function of the filtering element impedance and the equipment impedance, and its magnitude and phase change within the frequency range. What's more, different performance levels of conducted radiation control (FCC, VDE) and sensitivity control required by the filter selection test are performed on the device. Frequently Asked Questions about Filter (Signal Processing) Basics1. What is filter in digital signal processing?In signal processing, a filter is a device or process that removes some unwanted components or features from a signal. Filtering is a class of signal processing, the defining feature of filters being the complete or partial suppression of some aspect of the signal. 2. Why do we use filter in digital signal processing?Digital filters are used for two general purposes:(1) Separation of signals that have been combined(2) Restoration of signals that have been distorted in some way. Analog (electronic) filters can be used for these same tasks; however, digital filters can achieve far superior results. 3. What is filter response?In comparison, filters carried out by convolution are called Finite Impulse Response or FIR filters. As you know, the impulse response is the output of a system when the input is an impulse. In this same manner, the step response is the output when the input is a step (also called an edge, and an edge response). 4. Which filter is present in DSP system?An ideal bandpass filter and second-order approximations. With DSP software, there are two basic approaches to filter design: finite impulse response (FIR) and infinite impulse response (IIR). 5. What are the functions of filter in signal processing?In the field of signal processing, a filter is a device or process that, completely or partially, suppresses unwanted components or features from a signal. This usually means removing some frequencies to suppress interfering signals and to reduce background noise. 6. What is filter frequency?A frequency filter is an electrical circuit that alters the amplitude and sometimes phase of an electrical signal with respect to frequency. ... The frequency separating the attenuation band and the pass is called the cut-off frequency. 7. What is IIR filter in DSP?The infinite impulse response (IIR) filter is a recursive filter in that the output from the filter is computed by using the current and previous inputs and previous outputs. Because the filter uses previous values of the output, there is feedback of the output in the filter structure. 8. Where FIR filter is used?The term FIR abbreviation is “Finite Impulse Response” and it is one of two main types of digital filters used in DSP applications. Filters are signal conditioners and function of each filter is, it allows an AC components and blocks DC components. The best example of the filter is a phone line, which acts as a filter. 9. What are the most commonly used active filters?The most common and easily understood active filter is the Active Low Pass Filter. Its principle of operation and frequency response is exactly the same as those for the previously seen passive filter, the only difference this time is that it uses an op-amp for amplification and gain control. 10. Why IIR filter is unstable?So, for unstable filters, the impulse response is not absolutely summable. In another way, the impulse response never approaches zero. Again, for IIR filter, h continues to go on with n i.e. never goes to zero. So, IIR filters are supposed to be unstable. Recommended ReadingComplete Introduction and Classification of Filters and ApplicationsPrinciple and Function of the FilterCommon Applications of FilterClassification of Electronic Filters

CatalogⅠ IntroductionⅡ Types of sensors in the phone  2.1 Acceleration sensor  2.2 Gravity sensor  2.3 Light sensor  2.4 Proximity sensor  2.5 Magnetism Sensor  2.6 Gyroscope  2.7 GPS position sensor  2.8 Hall Sensor  2.9 Air pressure sensor  2.10 Heart rate sensor  2.11 Blood oxygen sensor  2.12 UV sensor  2.13 Temperature sensor  2.14 Fingerprint sensorⅢ Integrated application of sensors in the phoneⅣ SummaryⅤ FAQⅠ IntroductionThe development speed of smartphone technology is unimaginable, which includes sensor technology. Sensors in mobile phones have the ability to make a big difference in our way of life.Sensors in mobile phones refer to those components that can be sensed by chips, such as response distance, light value, temperature value, brightness value and pressure value. Like all electronic components, these sensors are getting smaller and smaller, with stronger performance and lower cost. Through the various data collected by the sensor, through the analysis and calculation of the program software of the mobile phone, various applications are generated. Today's mobile phones have provided extremely convenient functions in our social, financial payment, sports monitoring, entertainment, learning and other aspects.Ⅱ Types of sensors in the phone2.1 Acceleration sensorThe concept of acceleration sensor and gravity sensor overlap slightly, but in fact, they are different. Acceleration sensor is measured in multiple dimensions, which refers to the acceleration values in X, y and Z directions. It mainly measures some actions of instantaneous acceleration or deceleration.  For example, measuring the speed and direction of the mobile phone, when the user holds the mobile phone, it will swing up and down, so that the acceleration can be detected to change back and forth in a certain direction, and the steps can be calculated by detecting the number of times of the change back and forth. In the game, the acceleration sensor can trigger special instructions. This sensor is also used in some daily applications, such as shaking and cutting songs, turning and muting. The power consumption of acceleration sensor is small but its accuracy is low. Generally used in mobile phones, it can be used to measure steps and judge the direction of mobile phones. 2.2 Gravity sensorThe gravity sensor is realized by piezoelectric effect. There are a heavy object and piezoelectricity piece integrated into the gravity sensor. The horizontal direction is calculated by the voltage generated in the two orthogonal directions. The gravity sensor used in the mobile phone can be used to switch between horizontal and vertical screen directions.In some games, gravity sensors can also be used to achieve more interactive control, such as balance ball, car games and so on. 2.3 Light sensorThe light sensor is similar to the eye of a mobile phone. The human eye can adjust the light entering the eye in a different light environment. And the light sensor can let the mobile phone sense the intensity of the ambient light, which is used to adjust the brightness of the mobile screen. Because the screen is usually the most power-consuming part of the mobile phone, the use of light sensors to help adjust the brightness of the screen can further extend the battery life. The light sensor can also be used with other sensors to detect whether the phone is placed in the pocket to prevent accidental contact. 2.4 Proximity sensorIt is composed of an infrared LED lamp and an infrared radiation light detector. The distance sensor is located near the handset of the mobile phone. When the mobile phone is close to the ear, the system uses the distance sensor to know that the user is on the phone and then turns off the display to prevent the user from affecting the call due to misoperation. The working principle of the distance sensor is that the invisible infrared light emitted by the infrared LED is reflected by nearby objects and detected by the infrared radiation light detector. The distance sensor is usually used with the light sensor. 2.5 Magnetism SensorThe magnetic field sensor uses magnetoresistance to measure the plane magnetic field, so as to detect the intensity and direction of the magnetic field. Magnetic field sensor is usually used in the common compass or map navigation to help mobile phone users achieve accurate positioning. Through the magnetic field sensor, you can obtain the magnetic field intensity of the mobile phone in X, y and Z directions. When you rotate the mobile phone until the value in only one direction is not zero, your mobile phone points to the right south. Many compass applications on mobile phones use the data of this sensor. At the same time, the specific orientation of mobile phone in three-dimensional space can be calculated according to the different magnetic field intensity in three directions. 2.6 GyroscopeGyroscope can measure the angular velocity along one or several axes, which is an ideal technology to supplement the function of MEMS accelerometer. In fact, if the accelerometer and gyroscope are combined, the system designer can track and capture the complete action of 3D space, and provide a more real user experience, accurate navigation system and other functions for end users. "Shake and shake" function in mobile phone (for example, shaking mobile phone can draw lots), body sensing technology, as well as VR angle adjustment and detection are all applied to gyroscopes. The gyroscope sensor is a necessary component for some induction games. With this sensor, the interaction of mobile games has a revolutionary change. Users can feedback the game with multi-directional operation of their bodies, not just simple buttons. Usually, the standard mobile phone is equipped with three-axis gyroscope, which can track the displacement changes in six directions. The three-axis gyroscope can get the angular acceleration of the current mobile phone in X, y and Z directions, which is used to detect the rotation direction of the mobile phone. Some functions of turning the mobile phone and answering the phone are realized by the change of angular acceleration. 2.7 GPS position sensorThere are 24 GPS satellites running in a specific orbit above the earth. They will continuously broadcast their position coordinates and time stamps(the total number of seconds since January 1, 1970, 00:00:00 GMT) to all parts of the world. The GPS module in the mobile phone starts from the instantaneous position of the satellite, and calculates the distance between the mobile phone and the satellite by the time difference between the time stamp of the satellite transmitting coordinate and the time of receiving. It can be used for positioning, speed measurement, distance measurement and navigation and so on.  GPS module is mainly used to receive the satellite coordinate information through the antenna to help users locate. With the popularization of 4G network, GPS is used in more scenarios, such as remote location monitoring with intelligent hardware, or location search after device loss. 2.8 Hall SensorThe function principle of Hall sensor is hall magnetoelectric effect. When the current passes through a conductor located in the magnetic field, the magnetic field will produce a force perpendicular to the direction of electron motion on the electrons in the conductor, thus generating potential difference at both ends of the conductor. The main function of the hall sensor installed on the mobile phone is to use the smart leather case (magnetic leather case). After the leather case is buckled, the screen will display a small window interface in the small window left on the leather case, which is used to answer calls or read short messages. 2.9 Air pressure sensorWhen the air pressure changes, the value of resistance or capacitance will change, so as to measure the air pressure data. GPS can also be used to measure altitude, but there will be an error of about 10 meters. If the air pressure sensor is installed, the error can be corrected to about 1 meter, which is helpful to improve the accuracy of GPS (Global Positioning System). In addition, when some outdoor applications need to measure air pressure, the mobile phone with air pressure sensor can also be used. In IOS health applications, you can calculate how many floors you have climbed. 2.10 Heart rate sensorIrradiate fingers with high brightness LED light, because the brightness (the depth of red light) will change periodically when the heart sends blood to capillaries. Then capture these regular changes through the camera, and transfer the data to the mobile phone for calculation, and then judge the heart contraction frequency to get the number of heartbeats per minute. The user's heart rate data is obtained by detecting the number of pulsations per minute of the blood vessels on the user's fingers. Heart rate sensors are common in wearable devices. 2.11 Blood oxygen sensorLike heart rate sensors, hemoglobin and oxyhemoglobin in blood have different absorption ratios for the red light. Infrared light and red light LED are used to irradiate fingers at the same time, and the absorption spectrum of reflected light is measured to measure blood oxygen content. Blood oxygen sensors can be used in sports or health applications. 2.12 UV sensorThe photoelectric emission effect of some semiconductors, metals, or metal compounds will release a large number of electrons under ultraviolet irradiation. The ultraviolet intensity can be calculated by detecting this discharge effect. UV sensor is also used in the field of sports and health and in detecting radiation levels in the environment.At present, there are few mobile phones using this kind of sensor, and the stability of the measurement needs to be further observed. 2.13 Temperature sensorMany smartphones are equipped with temperature sensors, and some have more than one. The difference is that their purpose is to monitor the temperature inside the phone and the battery. If it is found that the temperature of a certain part is too high, the mobile phone will be turned off to prevent damage. In terms of extended functions, the temperature sensor can also detect the temperature change in the outside air, even the user's current temperature. 2.14 Fingerprint sensorAt present, the mainstream technology is capacitive fingerprint sensor, but ultrasonic fingerprint sensor is also gradually popular. When the capacitive fingerprint sensor works, the finger is one pole of the capacitance, and the other is a silicon chip array. Through the microcurrent generated between the human body's micro-electric field and the capacitance sensor, the distance between the fingerprint's peak and valley and the sensor forms the capacitance height difference to describe the fingerprint pattern. The principle of ultrasonic fingerprint sensor is similar, but it will not be interfered by sweat and oil, and the recognition speed is faster. It can be used in mobile phones to unlock, encrypt, pay and so on. It can automatically collect user fingerprint to protect privacy, which is usually used as a security measure.Ⅲ Integrated application of sensors in the phoneNowadays, the technology level of smartphones is rapidly updated, which is largely due to the innovation and breakthrough of sensor technology in mobile phones. With the integrated application and software support of basic sensors, mobile phone researchers have developed many cool mobile phone functions. ① Super safe 3D ultrasonic fingerprint recognitionThe mobile phone integrates Xiaolong 820 chipset and Xiaolong sense ID. Among them, Xiaolong sense ID adopts the latest ultrasonic technology developed by Qualcomm to realize 3D fingerprint recognition. Fingerprint press recognition technology has become the standard equipment of some smartphones. Different from the previous technology, Qualcomm snapdragon sense ID can work even when there is a little dirt or moisture in the user's fingers, and can even penetrate glass, aluminum, stainless steel, sapphire, plastic and other equipment for identification. This means that mobile phone manufacturers can integrate sensors and devices without having to make fingerprint identification units into a single button. Therefore, ultrasonic fingerprint recognition technology can be put into the screen window of the flat panel. In addition, in terms of security, it has been greatly improved. Ultrasound has been used in the field of professional biometrics for a long time. It can penetrate the epidermis and detect the three-dimensional details of fingerprint, making it difficult for hackers to copy fingerprint and invade users' mobile phones. ② Iris recognition of mobile phoneThe iris of human eye is more complex than fingerprint, so it is safer to use iris recognition to unlock mobile phone than fingerprint recognition. Users only need to capture the eyeball through a special app, log the iris pattern of the eye onto the terminal, and then they can use it safely. Iris mobile phone will become the wallet for everyone to pay, the gold card of the bank, the key to open the door, the certificate for customs clearance and the evidence for medical insurance, opening a new generation of Internet identity authentication. The mobile phone's built-in micro iris recognition product consists of imaging module, lighting module and software algorithm. It can scan the user's iris features through the built-in camera, and the user only needs to stare at the screen for a short time. The effective recognition distance is 20 ~ 30cm, and the recognition speed is 1s. Based on the capsaic security chip and metacentric dual operating system independently developed by Spreadtrum, the iris recognition scheme is optimized from the aspects of system imaging, feature description and matching, security and anti-counterfeiting, user interaction, etc., to achieve accurate recognition. ③ RWB technology creates an intelligent and beautiful imageThe mobile phone with RWB technology is equipped with f1.8 aperture and 6p lens. Compared with the photos taken by the previous RGB technology models, the noise reduction ability is increased by 80%, the sensitivity is increased by 40%, and the area is reduced by 23%. The smaller rear camera mirror volume is used to obtain more light, and the details under weak light will be better. The image sensor of Bayer array usually uses RGB (red, green and blue) technology. On average, the whole sensor will block two-thirds of the incident light, resulting in a great waste. RWB (red, white and blue) has the greatest improvement compared with the traditional Bayer array sensor, which is the high sensitivity shooting performance. As the green pixel is replaced by the white pixel, the effective light intensity received by the sensor almost doubles, and the RWB's high sensitivity index has also been significantly improved. ④ Leica dual cameraLeica Summit Series dual lens with better brightness and clarity makes it easier to take photos and videos. The rear 12 megapixel black-and-white and color dual cameras have more than just two 12 megapixel lenses. In the process of photographing, the dual cameras work at the same time, and the black and white lens capture the details to make the image clearer; the color lens capture the color to make the color fuller, and the image synthesis algorithm makes the details and the colors more integrated, so the picture is lifelike and amazing. By using the hybrid focusing technology of laser focusing, depth focusing and contrast focusing, we can take the wonderful pictures with clear picture and clear layers in an instant. Mobile phone for comprehensive health exercise monitoringThis mobile phone attaches great importance to the health of users. It is equipped with ten major professional sensors, with low power consumption, which can realize users' 24-hour use of professional sports applications. In addition, more sensors allow the phone to restore the user's real movement, accurate to three steps of movement, while also measuring heart rate, blood oxygen and ultraviolet. With the support of the application algorithm, the user's stride and stride frequency can also be accurately identified. ⑤ 3D visual sensory experience of eye-tracking technologyThe concept of "full display mobile phone" has two cameras in front of it. One is used for taking photos like ordinary mobile phones, while the other is used for eye tracking and capturing the position of human eyes. According to your eye position and pupil distance, a reasonable visual angle image matching the position of human eyes is customized and generated in real-time. Whether it's left and right or front and back movement, you can get a comfortable and clear 3D visual sensory experience all the way. "One screen, two cores and three cameras" is standard for full display mobile phones. ‘One screen’ is the naked eye 3D cylindrical grating LCD screen, users can experience the shock of 3D and VR vision without wearing 3D glasses, and they can realize the free switching of 2D / 3D. ‘Two cores’ is that in addition to the CPU, there is an independent VR visual motion chip to improve the 3D / VR rendering speed. ‘Three cameras’ is that in addition to conventional cameras, eye-tracking cameras are added. ⑥ Video integrated mobile phone’s free conversion of 2D / VR The mobile phone realizes the integration of VR camera and mobile phone. It is equipped with four cameras, two at the front and two at the back, which can meet the demand of 360-degree panoramic shooting, realize 3D stereo effect, and also can freely switch between VR lens and 2D plane lens at the same time. The pixels of CMOS image sensor in VR camera module reach 26 million, and Sony photosensitive device is used. The thickest part of the camera module of ultra-thin VR panoramic lens is only 23.8mm, which is the thinnest mobile VR camera module in the world. VR mobile camera uses a single binocular zigzag two in one super wide angle camera module. This VR camera module contains two imaging systems with the same structure. Each imaging system is composed of a 200 degree super wide angle lens and an imaging sensor. The lens optical path adopts 90 degree zigzag double optical path design. The optical axis of the two cameras is the same, greatly reducing the lens volume to achieve ultra-thin and ultra light integrated structure. VR camera module also integrates the front and rear VR camera scenes into a sphere through image recognition, splicing and other algorithms, so that the pixel size, color, brightness and other parameters of the two hemispheres are the same, which is the first in terms of technology.Ⅳ SummaryThe development of sensors in the future is sure that they will know more about the surrounding environment, that is to say, the types of sensors will be far more than these. The bolder assumption is that in the future, sensors will not only perceive but also have certain processing capacity. What sensors transmit is not only data, but also some intelligent operation and judgment. In terms of sensor technology, it is the common understanding of the whole industry that sensor integration is getting higher and higher. The higher integration degree leaves more possibilities for the expansion of sensors, and greatly saves the equipment space, which is more conducive to the development of mobile devices towards portability. I believe that in the foreseeable future, the perception of our mobile phone to users will be more accurate, and its application in the future will be far richer than we think now. Ⅴ FAQ1. What sensors does a phone have?• Accelerometer.• Ambient Light Sensor.• Ambient Temperature Sensor.• Air Humidity Sensor.• Barometer Sensor.• Finger Print Sensor.• Gyroscope Sensor.• Harmful Radiation Sensor and so on. 2. How many sensors are there in mobile?Today's mobile devices are packed with nearly 14 sensors that produce raw data on motion, location and the environment around us. This is made possible by the use of micro-electromechanical systems (MEMS). 3. How many types the capacitive touch sensors are classified?There are two types of capacitive touch sensors: surface capacitive sensing and projected capacitive sensing. In surface capacitive sensing, an insulator is applied with a conductive coating on one side of its surface. On top of this conductive coating, a thin layer of the insulator is applied. 4. What is the proximity sensor on phone?In Android, the proximity sensor is primarily used to detect when the user's face is close to the screen. ... This is how the phone screen seems to know to switch off when you hold it up to your ear during phone calls, preventing any errant button presses. 5. Do phones have a motion sensor?Most Android-powered devices have an accelerometer, and many now include a gyroscope. The availability of software-based sensors is more variable because they often rely on one or more hardware sensors to derive their data. 6. Which sensor is used in the touchscreen?Optical touchscreens use infrared emitters combined with infrared image sensors to continuously scan the touchscreen. When an object comes into contact with the touchscreen, it blocks some of the infrared light being received by the sensors. 7. What is a simple touch sensor?The Touch Sensor is sensitive to touch, pressure as well as force. The Touch Sensor works similar to that of a simple switch. When there is contact or a touch on the surface of the Touch Sensor. It acts like a closed switch and allows the current to flow through it. 8. How do I find the sensor code on my phone?To get the ball rolling, simply open your Samsung phone app. From there, enter *#0*# using the dial pad, and the phone will immediately go into its secret diagnostic mode. Note that the process is automatic, so there's no need to tap on the green call button to enter the command. 9. How accurate are phone gyroscopes?They used an algorithm designed for repetitive, well-defined, and bounded pedaling leg movement. Their results show that the achieved accuracy of gyroscope angular tracking in pedaling is in the range of 2.2°–6.4°. Many works have been published on golf swing motion tracking. 10. What is a depth sensor in mobile?The DepthVision Camera is a Time of Flight (ToF) camera on newer Galaxy phones including Galaxy S20+ and S20 Ultra that can judge depth and distance to take your photography to new levels. ... With Quick Measure, the camera acts as a 3D camera, judging width, height, area, volume, and more when you put an object in the frame. 

CatalogⅠ The Role of the FuseⅡ Working Principle of the FuseⅢ Classification of the FuseⅣ The Terminologies of the FuseⅤ Safety Standards and Signs for Fuse TubesⅥ Factors Affecting Fuse Life and Evaluation of Fuse Life6.1 Factors Affecting the Life of the Fuse6.2 Effect of the Use of the Fuse After Aging6.3 Test Evaluation of Fuse LifeⅦ Fuse Suitable CircuitⅧ Precautions for Using the Fuse TubeⅨ Selection of Fuse TubeⅩ FAQⅠ The Role of the Fuse• Under normal circumstances, the fuse acts as a connection circuit in the circuit.• In the case of abnormal (overload), the fuse acts as a safety protection element in the circuit, and safely cuts off and protects the circuit by blowing itself. Figure 1.Ⅱ Working Principle of the FuseWhen the fuse is energized, the heat converted by the electrical energy causes the temperature of the meltable item to rise. When the normal working current or the allowable overload current passes, the generated heat is radiated to the surrounding environment through the meltable body and the outer casing, and the heat generated by convection, conduction, etc. is gradually balanced with the generated heat. If the generated heat is greater than the amount of heat dissipated, the excess heat gradually accumulates on the meltable item, causing the temperature of it to rise; when the temperature reaches and exceeds the melting point of the meltable item, it will be melted, blown and the current will be cut off and plays a role as a safety protection circuit. Ⅲ Classification of the Fuse• According to the external size, it is divided into φ2, φ3, φ4, φ5, φ6 and others. • According to the blowing characteristics, it is divided into fast-blown type, medium time-delay blown type, and time-delay type. (it can also be divided into express, strong delay). • According to the breaking capacity, it is divided into low breaking type and high breaking type (it can also be divided into enhanced breaking type). • According to safety standards (or areas of use): UL/CSA (North America) specification, IEC (China, Europe, etc.) specification, MIT/KTL (Japan/Korea) specification, etc. • Other classifications. Ⅳ The Terminologies of the Fuse• Rated current: The nominal operating current of the fuse tube (the maximum current that the fuse maintains normal operation for a long time under normal conditions). • Rated voltage: The nominal working voltage of the fuse (the maximum voltage that can safely withstand when the fuse is disconnected). When a fuse is selected, the rated voltage of the selected fuse should be greater than the input voltage of the protected circuit. • Breaking capacity: When a large overload current (such as a strong short circuit) occurs in the circuit, the fuse can safely cut off (break) the maximum current of the circuit. It is the most important safety indicator for fuses. Safe breaking means that something endangers the surrounding elements, components and even personal safety such as splashing, burning, the explosion will not happen in the breaking circuit.  • Overload capability (load carrying capacity): The fuse can maintain the maximum overload current for working within the specified time. When the current flowing through the fuse exceeds the rated current, the temperature of the meltable item will gradually rise after a period of time and eventually be blown. The UL standard stipulates that the fuse remains in operation for more than 4 hours, and the maximum unblown current is 110% of the rated current (100% for the miniature fuse tube) The IEC standard stipulates that the fuse remains in operation for more than one hour, and the maximum unblown current is 150% of the rated current. • Fuse characteristics (I-T): The relationship between the load current applied to the fuse and the fuse blowing time. Blowing characteristic curve (I-T curve): A curve formed by the average blowing time coordinate point of the fuse under different load currents in a logarithmic coordinate system in which the load current is the X-axis and the blowing time is the Y coordinate. Each type of fuse has a corresponding curve that represents its blowing characteristics, which is a good indication of the fuse's overload performance and it is for reference when selecting the fuse. Blowing characteristics table: A table consisting of several specified representative load current values and corresponding blowing time ranges. All safety standards have clearly stated that this is the most important basis for the acceptance of fuses. For example, fast-blow type such as UL, CSA, MIT/KTLA, is specified as:In 100% 4 hours(minimum)In 135% 1 hour(maximum)In 200% 2 minutes(maximum) • Melting heat value (I2t): The nominal energy value that the cut-off current needed to melt and partially carburate the fuse, which is simply the minimum amount of heat required to blow the fuse. Total I2t=melted I2t+ arcing I2t The melting I2t (corresponding to the pre-arcing I2t in the IEC standard) refers to the energy required from the melting of the fuse to the moment of arcing; the arcing I2t refers to the energy required for the arcing from the moment it starts to the moment it eventually extinguishes. For low-voltage fuses, the arcing time is very short and often negligible. That is to say, the arcing I2t can be calculated as zero. Both UL and IEC do not require I2t, but I2t has some help with fuse selection. The I2t measurement of the fuse is calculated as I2t when the fuse's blowing time is less than 10ms (usually 8ms). • Voltage drop: The voltage difference across the fuse after thermal equilibrium underrated current conditions. • Temperature rise: Under a certain current condition, the difference between the surface temperature of the fuse and the initial temperature of the energization (which can be understood as the ambient temperature) after the heat balance is reached, that is, the temperature rise = the surface temperature of the fuse - the ambient temperature. Figure 2.Ⅴ Safety Standards and Signs for Fuse Tubes• UL, CSA standards: North American regional safety standards such as the United States, Canada; small current fuse tube standards are UL248-1/14, CSA248-1/14.Safety sign:--- UL/CSA LIST (Listing Sign), the product safety sign passed the test in accordance with UL/CSA248-1/14.--- UL/CSA RECOGNIZED (Approved Sign), the product safety mark passed the test partly in accordance with UL/CSA248-1/14. • JIS Standard: Japanese Electrical Safety Standard. The standard for small current fuse tubes is JIS C6575.Safety sign:--- T--- PSEBoth signs were valid before the end of 2006, after which only the “PSE” mark was valid. • KTL Standard: Korean Electrical Safety Standard.Safety sign:--- K • IEC standards: International Electrotechnical Commission standards and safety standards used in Europe and China. The standard for small current fuse tubes is IEC60 127, GB 9364 (China).Safety sign:CCC --- ChinaSEMKO --- SwedenVDE --- GermanyBSI --- UKIMQ --- Italy Ⅵ Factors Affecting Fuse Life and Evaluation of Fuse Life6.1 Factors Affecting the Life of the Fuse• Working environment temperature:Excessive ambient temperature is detrimental to the life of the fuse. Time-delay (slow-blow) fuses, such as tin ball type, begin to spread to the wire when the temperature is approximately 160℃ (150-170℃); the meltable item (wire) of the fast-blow fuse begins to violently oxidize at a temperature approximately equal to 200℃ (175 to 225℃). As the fuse is oxidized from the outside to the inside, multiple times of diffusion, thermal stress fatigue, etc., the life of the fuse will be gradually shortened. Therefore, it is recommended that the time-delay fuse should not work above 150℃ for a long time, and the fast-blow fuse should not work above 175~225℃ for a long time. • Pulse current:Constant pulse shock will cause thermal cycling, which will cause the diffusion, oxidation, thermal stress, etc. of the fuse to be generated and even accelerated. The fuse will age as the pulse energy and frequency increase. The impact resistance life of the fuse depends on the I2t of the pulse as a percentage of the fuse's own I2t; normally, it should be less than 20%, so that the fuse can withstand more than 100,000 times of impact. • Other:Such as the tube clamp in contact with the fuse, and the length and cross-sectional area of the connecting wire. The contact resistance between the fuse and the pipe clamp is large, which is detrimental to the service life. The UL standard specifies that the contact resistance between the fuse to the tube clamp is less than 3mΩ during the test. When the contact resistance is large, the tube clamp does not dissipate heat but generates heat and transmits it to the fuse. 6.2 Effect of the Use of the Fuse After AgingAfter the fuse has aged, the situation that the current should be cut off and the fuse is not blown will not happen. When the fuse ages, it is equivalent to a drop in the rated value (current) rather than a rise, so there is no safety problem in the circuit, but the circuit is cut off under a small overload current or pulse. 6.3 Test Evaluation of Fuse LifeThe "endurance test method" is specified in the IEC standard, and there is no similar regulation in the UL standard. The durability test in the IEC standard is the life test by using the DC power supply test at normal temperature:• The voltage drop is measured until the temperature is stable under the rated current;• 1.2 times of rated current for 1h, cut off current for 15min and circulate for 100 times;• Power on 1.5In for 1h and measure voltage drop;• Measure the voltage drop with method a. Requirements: The voltage drop change before and after the test should not exceed 10%, and the sign is still clear and identifiable, and the end cap solder joint does not show any deterioration. Figure 3.Ⅶ Fuse Suitable Circuit• Very fast and fast-blow type fuse tubes: Suitable for circuits with relatively constant current, or circuits with low inrush current, and there are shock-resistant fragile components in the circuit. • Medium time-delay and time-delay blown fuse tubes: Suitable for circuits with normal inrush current, and there are no shock-resistant fragile components in the circuit. Lightning-resistant fuse tube for special circuits that need to withstand lightning strikes, such as telephones. • Breaking current fuse tube: Suitable for circuits where large short-circuit current may occur. • Oxygen resin package and plastic case type fuse tube: suitable for installation of dense components or circuits where contact short circuits may occur. • 350V, 300V fuse tube: suitable for electronic rectifiers and other products. Ⅷ Precautions for Using the Fuse Tube1. The rated voltage of the selected fuse should be greater than the input voltage of the protected circuit. 2. The rated current of the UL specification fuse is determined under laboratory conditions and should be used less than 75% of the nominal value in actual use. For example, the circuit operating current is 0.75A, we can select the fuse tube with a minimum rated current of 1A. 3. The rated current of the IEC specification fuse tube can be used at 90% or 100% of the nominal value in actual use. For example, the circuit operating current is 0.9A, and the fuse tube with a minimum rated current of 0.9A or 1A can be selected. 4. Under different operating environment temperatures, the working life of the fuse is different. The higher the temperature, the shorter the working life of the fuse. In actual selection, the rated current of the fuse should be increased according to the coefficient. 5. The breaking capacity of the fuse tube is proportional to its volume and inversely proportional to the rated voltage, that is, the larger the volume or the smaller the rated voltage, the larger the breaking capacity of the fuse tube; the smaller the volume or the larger the rated voltage, the smaller the breaking capacity of the fuse tube. Therefore, if a small-size fuse tube is used, it is necessary to determine that the short-circuit current that may occur in the protected circuit is not too large; if a large short-circuit current may occur in the protected circuit, a larger-size fuse tube with a larger breaking current must be selected. 6. The surge I2t of the protection circuit should be less than 20% of the rated I2t of the fuse tube. The fuse tube can withstand more than 100,000 surges in the protected circuit. Ⅸ Selection of Fuse Tube1. Determine the safety sign: According to the market requirements for the product to be sold, select the safety certification sign and safety standard (UL standard or IEC standard fuse tube) of the fuse tube. 2. Determine the dimensions of the fuse tube: Select the dimensions of the fuse tube according to the installation space and the defined safety certification sign and safety standards. 3. Determine the model number: Select the type of fuse tube based on the current characteristics of the circuit being protected. For example, if the current characteristic of the protected circuit is a constant current, the fast-blow type should be selected. 4. Determine the rated voltage: Determine the rated voltage of the fuse tube according to the input voltage of the protected circuit and the requirements for use. For example, if the input voltage of the protected circuit is 220V, the fuse tube with rated voltage above 220V should be selected, 250V, 300V, 350V, etc. can also be selected; but considering the cost factor, it is not necessary to use the rated voltage which is too high. 5. Determine the minimum rated current: According to the stable operating current of the protected circuit and the relevant use loss factor, the rated current of the fuse tube is initially determined. For example, the stabilized working current of the protected circuit is 1A, the UL standard time-delay fuse tube should be selected, and the working environment temperature is about 80℃. The minimum rated current of the fuse tube is selected as 1A × 1.25 ÷ 0.5 = 2.5A. 6. Determine the minimum I2t of the fuse tube: Determine the I2t of the fuse tube based on the surge I2t of the protected circuit. For example, the surge I2t of the protected circuit is 1 (A2S). To ensure that the fuse tube can withstand more than 100,000 times of impact, the I2t of the fuse tube should be greater than 1÷0.2=5 (A2S). 7. Determine the rated current of the fuse tube: According to the minimum rated current and the minimum I2t value, check the corresponding model specifications, and take the primary rated current specification that is greater than the minimum rated current value and whose I2t value is also greater than the minimum I2t value as the rated current of the selected fuse tube. For example, based on the above minimum,(1) If the I2t of the rated current of 2.5A is 4.3A2S and the I2t of 3A is 5.4A2S, take 3A as the rated current of the selected fuse tube;(2) If the I2t of rated current of 2A is 5.3A2S and the I2t of 2.5A is 7.6A2S, take 2.5A as the rated current of the selected fuse tube. Ⅹ FAQ1. What is Fuse?A Fuse or an Electric Fuse is an Electrical / Electronic device that protects the circuit from different electrical faults like over-current and overload. Fuses can be considered sacrificial elements in the circuit as they act as a weak link in the entire circuit. 2. What is the working principle of fuse?An electric fuse is based on the principle of the heating effect of electric current. It is made up of thin metallic wire of non-combustible material. A fuse is always connected between the ends of the terminal in a series connection with the circuit. 3. What is the application of fuse?Used to protect transformers, motors and power systems from over-current conditions. In feeders, power transformers, and solar circuits. Electrical appliances and house distribution boards use fuse for domestic purposes. 4. What is the type of fuse?Fuses can be divided into two major categories, AC fuses, and DC fuses. The below block diagram illustrates the different types of fuse under each category.  5. Are fuses AC or DC?Generally, fuses have a DC voltage rating that is half of the maximum AC voltage rating. 6. Why fuse is not used in the neutral wire?Because the fuse can disconnect the circuit only when the excess current flows completely through the neutral. ... Since, neutral is not a live conductor coming from the source, disconnecting a neutral line can only open the current path through neutral. But, the live phase still carries the charge. 7. How do I choose a fuse size?In order to select the right amperage of the fuse, you first need to know the full-load steady-state current of the circuit at an ambient temperature of 25º C (68º F). Once the current value is determined, then a fuse rating should be selected to be 135% of this value (taken to the next standard value). 8. How do you use fuses in a circuit?Fuses should always be connected to the hot wire and should be placed before any other component in the circuit. In most projects, the fuse should be the first thing the hot wire connects to after it enters your project enclosure. 9. How long do fuses last?Fuses never need to be replaced unless they are tripped/activated by a failing component or any other even with the circuits of the car. They are encapsulated in plastic and are in a vacuum inside the piece. As long as the current limit isn't reached, that wire will not burn out. 10. Do fuses reduce voltage?The voltage rating of a fuse must be at least equal to or greater than the circuit voltage. It can be higher but never lower. ... If a fuse is used with a voltage rating lower than the circuit voltage, arc suppression will be impaired and, under some overcurrent conditions, the fuse may not clear the overcurrent safely. 

Ⅰ IntroductionWith the improvement of computer technology, the demand for non-volatile memory is increasing, their read and write speed requirements are getting faster and faster, and the power consumption  are becoming smaller and smaller as required by users. But the traditional non-volatile memory such as EEPROM , FLASH, etc. have been difficult to meet these needs.Traditional mainstream semiconductor memories can be divided into two categories: volatile and nonvolatile. Volatile memory includes static random access memory (SRAM) and dynamic random access memory (DRAM). Both SRAM and DRAM lose their saved data when power off. Although RAM is easy to use and performs well, a big disadvantage of it is data loss.Non-volatile memory does not lose stored data in the case of a power failure, because all mainstream non-volatile memories are derived from read-only memory (ROM) technology. ROM, what is called a read-only memory is definitely not easy to write, in fact, it cannot be written at all. All memories developed by ROM technology are difficult to write data, including EPROM, EEPROM and Flash. And these memories not only have a slow writing speed, but also can only be erased and written in a limited number of times.Based on improving semiconductor technologies, ferroelectric memory, a new type of memories, has some unique characteristics. Ferroelectric memory is compatible with all the functions of RAM, and it is a non-volatile memory like a ROM. In other words, ferroelectric memory bridges the gap between these two types of storage, a type of non-volatile RAM. Compared with traditional non-volatile memory, it has attracted much attention due to its advantages such as low power consumption, fast read and write speed, and strong anti-irradiation capability. CatalogⅠ IntroductionⅡ TerminologyⅢ Working PrincipleⅣ FRAM Material FeaturesⅤ Circuit StructureⅥ Reading and Writing ProcessⅦ FRAM StructureⅧ Comparison of FRAM with Other Storage TechnologiesⅨ FRAM UsageⅩ SummaryⅪ One Question Related to FRAM and Going Further11.1 Question11.2 AnswerⅡ TerminologyFerroelectric Memory (FeRAM)Ferroelectric memory (FRAM), also known as F-RAM or FeRAM, is a type of random access memory with fast read and write speed, and the ability to retain data after power is turned off (such as read-only memory and flash memory) is combined, which is the most commonly used type of personal computer memory. Since it is not as dense as dynamic random access memory (DRAM) and static random access memory (SRAM), that is, it cannot store as much data as they do in the same space. In other words, it cannot replace DRAM and SRAM technologies. However, because it can store data quickly with very low power conditions, it is widely used in consumer’s small devices, such as personal digital assistants (PDA), mobile phones, power meters, smart cards, and security systems. FRAM’s read and write speed is faster than flash memory. In some applications, it may also replace electrically erasable read-only memory (EEPROM) and static random access memory (SRAM), and will become a key component of future wireless products. Ⅲ Working PrincipleFeRAM or ferroelectric RAM seems to indicate that an iron element exists within the memory this is not actually the case. A ferroelectric is a material containing a crystal that can spontaneously polarize. It has two states that can be reversed by an external electric field. When an electric field is applied to the ferroelectric crystal, the central atom moves in the crystal following the electric field direction. When an atom moving, it passes through an energy barrier, causing charge breakdown. Internal circuits react to the charge breakdown and set the memory. After the electric field is removed, the central atom remains polarization state, which makes the materials non-volatile, so the state of the memory is preserved. Because there is no atomic collision in the entire physical process, the ferroelectric memory has the characteristics of high read and write speed, ultra-low power consumption, and unlimited writes, making it very suitable to act as temporary storage memory in important systems to transfer various data between subsystems, for each subsystem to read and write frequently.Therefore, with an external electric field, the polarization characteristics of ferroelectric materials will change. When this electric field is removed, the data can still be saved. Without an external electric field, there are two stable states of polarization characteristics. Figure 1 is a hysteresis loop of a ferroelectric material capacitor, showing the different polarities of the ferroelectric capacitor under different applied electric fields. Among them, the two most important parameters are the degree of residual polarization Pr, and the coercive field Ec. In the absence of electric field effect, +/- Pr represents two states of “0” and “1”. To obtain these two states, the applied electric field must be greater than +/- Ec, at this time, the required threshold voltage is also determined.Figure 1. Ferroelectric Hysteresis LoopThe industry explores the use of ferroelectric materials for DRAM: using them as dielectric materials in DRAM capacitors. That is, ferroelectrics are used to replace high-K dielectric materials in standard logic devices, and finally non-volatile transistors are formed, which are FeFETs. The two stable polarization states of the ferroelectric gate oxide change the threshold voltage of the transistor, even when the supply voltage is removed. Therefore, the binary state is encoded in the threshold voltage of the transistor. The writing operation of the memory cell can be completed by applying a pulse on the gate of the transistor, which will change the polarization state of the ferroelectric material and affect the threshold voltage. For example, applying a positive pulse will reduce the threshold voltage, making the transistor in the “on” state. Reading is done by measuring the drain current. This memory mode is similar to the operating mode of a NAND flash: electrons are injected and drawn out of the floating gate, which adjusting the threshold voltage of the transistor.In contrast, the leakage current factor of ferroelectric capacitors is not as important as traditional non-volatile memories such as EEPROM and FLASH, because the information storage of FeRAM is realized by polarization, not free electrons. Ⅳ FRAM Material FeaturesIdeal ferroelectric materials need to meet the following characteristics:Small dielectric constantReasonable self-polarization degree (~ 5μC/ cm2)High Curie temperature (outside the storage and operating temperature range of the device)The thickness of ferroelectric materials should be thin (submicron) to make the coercive field EC smaller. Ferroelectric materials should stand a certain breakdown filed strength.Internal switching speed should be fast (nanosecond level)The ability to keep the data and the long-lasting ability will be good.If used by the military, it is also required to be able to resist radiation exposure. Good chemical stabilityGood processing uniformityEasy to integrate into CMOS processNo bad effect on the surrounding circuitsSmall pollution After years of research and development, there are currently two main types of mainstream ferroelectric materials: PZT and SBT.PZT is lead zirconate titanate PbZrxTil-xO3; SBT is strontium bismuth tantalate Sr1-yBi2 + xTa2O9. The structure of these two materials is shown in Figure 2. Figure 2. Schematic Diagram of PZT and SBT Material StructurePZT is the most studied and widely used. Its advantage is that it can be made at lower temperatures by sputtering and MOCVD. It has the advantages of large residual polarization, cheap raw materials, and low crystallization temperature.; its disadvantages are fatigue degradation problems, and lead pollution to the environment. Moreover, the film deposition process of these materials has proved to be very challenging. At the same time, the extremely high dielectric constant (about 300) of these materials is a big obstacle to their integration into transistors.In addition, scientists have discovered the presence of a ferroelectric phase in a less complex material, hafnium oxide (HfO2), which raise a new concept of storage concept. The researchers found that the ferroelectric phase) can be stabilized by doping silicon (Si) into HfO2. Compared with PZT, HfO2 has a lower dielectric constant and can deposit thin films in a conformal manner (ie, the atomic layer deposition (ALD) process). Most importantly, scientists are familiar with HfO2, because it is the HK gate oxide material in the logic device HKMG. By modifying this CMOS-compatible material, logic transistors can become non-volatile FeFET memory transistors.Functional verification of FeFETs has been implemented in a two-dimensional planar architecture. At the same time, the HfO2 conformal deposition process makes 3D stacking possible, for example, depositing ferroelectric materials on vertical “walls’ to stack transistors in a vertical direction.In terms of materials, 3D FeFETs can solve some of the challenges brought by 2D FeFET structures. One challenge is related to the polycrystalline nature of the HfO2. Scaling the thickness of the HfO2 film will significantly reduce the number of grains in this layer. Because not all the crystal grains have the same polarization direction, the reduction of crystal grains will affect the consistency of the transistor’s response to the external electric field, and eventually lead to large differences between the tubes. By 3D stacking, this drawback is overcome in physical filed. That is, HfO2 does not need to be compressed too thinly, thereby reducing tube-to-tube variation.These vertical FeFETs are expected to have more advantages than complex 3D NAND flash memory, including simple process, lower power consumption and faster speed. Compared to 3D NAND flash memory, vertical FeFET can be programmed at a lower voltage, which improves memory reliability and scalability.The biggest advantage of SBT is that it does not have the problem of fatigue degradation, and it does not contain lead, which meets EU environmental standards; however, its disadvantages are that the process temperature is higher, which makes the process integration difficult, and the degree of residual polarization is small. The comparison of the two materials is shown in Table 1.Table 1. Comparison between PZT and SBT  PZTSBTStructureABO3Layered structureDeposition technologySol-gel,MOCVDSol-gel,MOCVDProcess temperature450℃~700℃750℃~850℃Residual polarity3012Fatigue10101010Data hold85℃@10a- At present, from the perspective of environmental protection, PZT has been banned, but from the perspective of performance and process integration of ferroelectric memory and cost, SBT has no advantages compared to PZT. Therefore, the selection of ferroelectric materials is worth discussing. Ⅴ Circuit StructureThe circuit structure of the ferroelectric memory is mainly divided into the following three types: 2 transistors-2 capacitors (2T2C), 1 transistor-2 capacitors (1T2C), 1 transistor-1 capacitor (1T1C), as shown in Figure 3. The 2T2C structure has two opposite capacitors for each bit as a reference to each other, so the reliability is better, but occupies too much space, which is not suitable for high-density applications. The transistor / single capacitor structure can be used like a DRAM to provide a reference for each column of the memory array, compared with the existing 2T2C structure, they effectively reduce the required space of the memory cell by half. This design greatly improves the efficiency of ferroelectric memory and reduces the production cost of ferroelectric memory products. The 1T1C structure has a higher integration density (8F2), but its reliability is poor. And the 1T2C structure is a compromise between these two structures. Figure 3. Three FRAM StructuresAt present, in order to obtain a high-density memory, 1T1C structure is mostly used (as shown in Figure 4). In addition, a chain structure is also adopted, thus Chain FeRAM is made. This structure is similar to the NAND structure. Through this method, a higher storage density than 1T1C can be obtained, but this method will also greatly increase the access time. Chain FeRAM (CFeRAM) structure is shown in Figure 5. Figure 4. 1T1C Layout Figure 5. Chain FeRAM (CFeRAM) Circuit StructureⅥ Reading and Writing ProcessAccording to the polarity of the electronic memory cell, a small charge amount is “0” and a large charge amount is “1”. This charge is converted into a reading voltage, which is “0” when it is less than the reference voltage and when it is greater than the reference voltage represents “1”. The stored information is read out as shown in Figure 6. Figure 6. Reading and Writing Process of FRAMDuring the reading process, the word line voltage is increased to turn on the MOS transistor, and then the drive line voltage is increased as VCC, so that different charges of the storage capacitor are distributed to the bit line parasitic capacitance, so different voltages appear on the BL to identify the data. During a writing process, the word line is raised to turn on the MOS transistor, and a pulse is applied to the drive line, so that different data on the bit line are stored in two different steady states of the ferroelectric capacitor.By adding a positive voltage or a negative voltage, these two voltages can make the capacitor into two different polarities. In this way, the information is written into the memory. Ⅶ FRAM StructureAt present, the most common device structures of ferroelectric memories are planar and stack structures. The difference between the two is the location of the dry ferroelectric capacitor and the way in which the capacitor is connected to the MOS tube. In the planar structure, the capacitor is placed above the field oxide, and the electrode of the capacitor is connected to the active area of the MOS tube through metal aluminum. The process is relatively simple, but the unit spacing is large. In the stack structure, the capacitor is placed in the source region, the lower electrode of the capacitor is connected to the source terminal of the MOS tube through a plug based on CMP process, which has a high integration density. In addition, the stack structure can adopt the method of making ferroelectric capacitors on metal wires, thereby reducing the mutual influence during the formation process. The following schematic diagrams of the two structures are shown in Figure 7 and Figure 8. Figure 7. Planar Structure Figure 8. Stack StructureThe process of the planar structure is relatively simple. The isolation uses the LOCOS structure, and the planarization does not require the CMP. The stacked structure has a high degree of integration based on advanced technique, and STI is used for isolation, in addition, CMP is required for planarization, and copper wires can be used.In addition, there is a structure that uses a ferroelectric material as the gate. Such a device can eliminate the destructive problem of data readout, and theoretically it is more space-saving and can make more greater integration. However, there are still serious problems with this structure, that is, the data storage capacity is very poor, only one month or less, so it is far from practical. Figure 9 is a schematic diagram of such a structure. Figure 9. FeFET Structure DiagramAt present, the ferroelectric memory generally adopts a planar structure with the line width more than 0.5 μm, and generally uses a stack structure when the line width is less than 0.5 μm. Ⅷ Comparison of FRAM with Other Storage TechnologiesAt present, Ramtron’s FRAM mainly includes two categories: serial FRAM and parallel FRAM. Among them, serial FRAM is divided into I2C two-line FM24×× series and SPI three-line FM25xx series. Serial FRAM is compatible with the traditional 24xx and 25xx E2PROM pins and timing, which can be directly replaced.FRAM products have the advantages of RAM and ROM, and fast read and write speed, in addition, they can be used as non-volatile memory. Due to the shortcoming of ferroelectric crystals, the number of accesses is limited, beyond which FRAM is no longer non-volatile. The maximum access times given is 10 billion, but it not means FRAM will be scrapped when over this upper limit. In the terms of it, FRAM is not non-volatile, but it can still be used as an ordinary RAM.FRAM vs E2PROMFRAM can be used as a second option for E2PROM. Except the performance of E2PROM, the FRAM access speed is much faster. When using FRAM, it must be determined that once there are 10 billion accesses is down to FRAM in the system, there is no damage.FRAM vs SRAMIn terms of speed, price, and convenience, SRAM is better than FRAM; but from the perspective of the entire design, FRAM has certain advantages. Non-volatile FRAM can hold startup programs and configuration information. If the maximum access speed of all the memories in the application is 70ns, one piece of FRAM can be used to complete the system, making the system structure more simpler.FRAM vs DRAMDRAM is suitable for applications where density and price are more important than access speed. For example, DRAM is the best choice for graphics display memory. There are a large number of pixels to be stored, and the recovery time is not very important. If you don’t need to save the last content at the next boot, use volatile DRAM memory. The role and cost of DRAM are reasonable compared with FRAM. In short, it turns out that DRAM cannot be replaced by FRAM totally.FRAM vs FlashAt present, the most commonly used program memory is Flash, which is more convenient and cheaper to use. The program memory must be non-volatile, and easier to rewrite, but the use of FRAM is limited by access times.Ⅸ FRAM UsageData collection and recordingFeRAM allows designers to write data faster and more frequently, and at a lower price than EEPROM.Typical applications: meters (electric meters, gas meters, water meters, flow meters), RF/ID instruments, car black boxes, air bags, GPS, power grid monitoring systems, and so on. Parameter setting and storageFeRAM helps designers solve the problem of data loss due to sudden power failure by storing data in real time. Parameter storage in the FeRAM is used to track the changes of the system in the past time. Its purpose includes restoring the system state or confirming a system error when the power is on.Typical applications: photocopiers, printers, industrial controls, set-top boxes, network equipment  and large household appliances. Non-volatile bufferFeRAM can quickly store data before it is stored in other memory, so that the data in the buffer will not be lost when having power failure.Typical applications: industrial systems, ATM teller machines, tax control machines, commercial settlement systems (POS), fax machines, non-volatile cache memory in hard disk, etc. Ⅹ SummaryFerroelectric memory is an emerging non-volatile memory. It started early and realized industrialization. Because of its advantages such as low power consumption, fast read and write speed, and strong anti-irradiation capabilities, there is a market for small-scale storage areas with low power consumption and radiation resistance. Having the characteristic of anti-radiation, in the case of electromagnetic waves or radiation, the data is still safe, so it has important applications in space science, medicine and other specific fields. However, the ferroelectric memory also has the disadvantages that it is difficult to improve the integration, the process is more contaminated, and it is difficult to be compatible with the CMOS technique. So that it needs further research and solution. Ⅺ One Question Related to FRAM and Going Further11.1 QuestionWhat is FRAM used for?11.2 AnswerFerroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. It is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FRAM can be used in many fields, for example, with ultra-low power consumption, it is very suitable for intelligent water meters, gas meters and so on. Frequently Asked Questions about Ferroelectric RAM1. What is FRAM memory?Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. 2. What is ferroelectric effect?Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. ... Thus, the prefix ferro, meaning iron, was used to describe the property despite the fact that most ferroelectric materials do not contain iron. 3. How does FRAM work?FRAM is a nonvolatile storage memory that retains its data even after the power is turned off. However, similar to commonly used DRAM (Dynamic Random Access Memory) found in personal computers, workstations, and non-handheld game-consoles, FRAM requires a memory restore after each read. 4. What are the unique characteristics of FRAM?FRAM has the characteristics of both ROM (Read Only Memory) and RAM (Random Access Memory), and features faster write, great read/write cycle endurance, and low power consumption. 5. Which enables the read and write operation in Feram?Write Operation in Ferroelectric Random Access Memory (FRAM)Similar to read operation, a pre-charge operation follows a write access. The circuit applies 'write' data to the Ferroelectric capacitors. If necessary, the new data simply switches the state of the ferroelectric crystals.